CN1774525A - 用于原子层淀积的气体输送装置 - Google Patents

用于原子层淀积的气体输送装置 Download PDF

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CN1774525A
CN1774525A CNA028239032A CN02823903A CN1774525A CN 1774525 A CN1774525 A CN 1774525A CN A028239032 A CNA028239032 A CN A028239032A CN 02823903 A CN02823903 A CN 02823903A CN 1774525 A CN1774525 A CN 1774525A
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gas
chamber
substrate
valve
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CN1774525B (zh
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陈岭
古文忠
吴典晔
仲华
艾伦·奥耶
诺尔曼·中岛
张镁
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Applied Materials Inc
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Abstract

一种用于实施循环层淀积法，如原子层淀积的装置和方法。在一种情况下，装置包括一个衬底支承件和一个室盖，上述衬底支承件具有一个接收衬底的表面，而上述室盖包括一个锥形通道和一个底部表面，上述锥形通道从室盖的中央部分延伸，而上述底部表面从通道延伸到室盖的周边部分，底部表面加工成一定的形状和尺寸，以便基本上盖住接收衬底的表面。装置还包括一个或多个阀和一个或多个气源，上述一个或多个阀连接到逐渐扩张的通道上，而上述一个或多个气源连接到每个阀上。

Description

用于原子层淀积的气体输送装置
发明背景
发明领域
本发明的各实施例总体上涉及一种用于原子层淀积的装置和方法。更具体地说，本发明的一些实施例涉及一种改良的用于原子层淀积的装置和方法。
相关技术说明
可靠地生产亚微米和更小部件是用于下一代半导体器件超大规模集成电路(VLSI)和特大规模集成电路(ULSI)的关键技术之一。然而，当电路技术的条纹受挤压时，收缩VLSI和ULSI技术中互连线的尺寸已把一些附加的要求放在加工能力上。是这种技术心脏的多层互连要求精密加工高纵横比的形体，如孔洞和其它互连线。可靠的形成这些互连线对VLSI和ULSI的成功和继续努力增加电路密度和各个衬底的质量来说，都是很重要的。
当电路密度增加时，各种孔洞、触点，及其它部件的宽度，及它们之间的介电材料，都减小到亚微米尺寸(比如，小于0.2微米或更小)。而介电层的厚度基本上保持固定不变，其结果是各部件的纵横比，亦即它们的高度除以宽度的值减小。许多传统的淀积方法难以充填纵横比超过4∶1，和尤其是纵横比超过10∶1那些地方的亚微米结构。因此，有大量正在进行的努力对准了买有高纵横比的基本上没有空隙和无缝的亚微米部件的形成。
原子层淀积是一种研究将各材料层淀积在具有高纵横比的部件上的淀积技术。原子层淀积的其中一个例子包括依次加入各种气体的脉冲。例如，用于依次加入各种气体脉冲的一个循环可以包括一种第一反应物气体的脉冲，接着加一种吹扫气体和/或抽真空的脉冲，接着加一种第二反应物气体的脉冲，及接着加一种吹扫气体和/或抽真空的脉冲。如本文所用的术语“气体”定义为包括一种气体或多种气体。依次加入第一反应物和第二反应物的分开脉冲可以在衬底的表面上产生各反应物交替的自限制单层吸附作用，并因此形成用于每个循环的单层材料。循环可以重复到所希望的淀积材料厚度。在第一反应物气体脉冲和第二反应物气体脉冲之间的吹扫气体和/或抽真空脉冲，用来减少由于过量反应物留在室中而造成各反应物气相反应的可能性。
然而，需要有一种新的装置来实施气体输送和通过原子层淀积来实施薄膜的淀积。
发明概述
提供了一种用于实施循环层淀积法如原子层淀积的装置和方法。在一种情况下，装置包括一个衬底支承件和一个室盖，上述衬底支承件具有一个接收衬底的表面，而上述室盖包括一个锥形通道和一个底部表面，上述锥形通道从室盖的一个中央部分延伸，而上述底部表面从通道延伸到室盖的周边部分，底部表面加工成一定形状和尺寸，以便基本上盖住接收衬底的表面。装置还包括一个或多个阀和一个或多个气源，上述一个或多个阀连接到逐渐扩张的通道上，而上述一个或多个气源与每个阀连接。
在另一种情况下，装置包括一个衬底支承件，一个室盖，和一个或多个气体导管，上述衬底支承件具有一个接收衬底的表面，上述室盖包括一个扩展通道，和包括室盖的一个锥形底部表面，上述扩展通道向下延伸到室盖的中央部分，上述室盖的锥形底部表面从扩展的通道延伸到室盖的周边部分，而上述一个或多个气体导管围绕扩展通道上面部分设置，其中一个或多个气体导管与扩展通道的中心成一个角度设置。装置还包括一个或多个阀和一个节流口，上述一个或多个阀连接到逐渐扩展的通道上，而上述节流口邻近锥形底部表面的周长设置在室盖上。
在一种情况下，方法包括：在衬底中央部分上方一个起初圆的方向上提供一种或多种气体进入衬底处理室中；通过非绝热膨胀降低各气体的速度；提供各种气体给衬底的中央部分；及以一种基本上均匀的速度将各气体径向上跨过衬底从衬底的中央部分导引到衬底的周边部分上。
对附图的简要说明
因此，其中得到并可以详细理解上面所引用的本发明各部件的方式，上面简要综述的本发明的更具体说明，可能必须参照本发明的一些实施例，上述实施例在各附图中示出。
然而，应该注意，各附图仅示出本发明的一些典型实施例，并因此不能看作是限制本发明的范围，因为本发明可以允许其它的同等有效的实施例。
图1是一种室其中一个实施例的示意剖视图，上述室包括一个适用于原子层淀积的气体输送装置。
图2A是设置在室盖下面表面上的一种节流口其中一个实施例的示意剖视图。
图2B是设置在室盖下面表面上的一种节流口其中一个可供选择的实施例示意剖视图。
图3是包括适用于原子层淀积的气体输送装置的一种室可供选择的实施例示意剖视图。
图4是一种阀示出若干阀入口和出口的示意剖视图。
图5是图4中所示的一种示例性阀的示意平面图。
图6是一种阀其中一个实施例的示意剖视图，上述剖视图示出阀的各内部元件和机构。
图7是一种隔膜在一个打开位置和一个打开位置之间移动的曲线图。
图8是在本发明的气体输送装置内形成的一种扩展槽其中一个实施例的水平剖视图。
图9是适合于接收一种气流的扩展通道其中一个实施例的水平剖视图。
图10是适合于接收3种气流的扩展通道其中一个实施例的水平剖视图。
图11是在本发明的气体输送装置内形成的扩展通道剖视图。
图12是示出一种气体在一个衬底的表面和室盖1的底部表面之间的两个不同位置处流动的示意剖视图。
图13是一种室其中另一个实施例的示意剖视图，上述室包括一个适用于原子层淀积的气体输送装置。
图14示出一种室的另一个实施例，上述室包括一个适用于原子层淀积的气体输送装置。
图15是一种可用于本发明的气体输送装置的气体箱示意图。
图16是一种罐的其中一个实施例的示意剖视图，上述罐用于通过图15的气体箱内的升华作用产生一种气体。
对优选实施例的详细说明
图1是一种示例性处理系统200的示意局部剖视图，所述处理系统200能实施循环层淀积，原子层淀积，数字化学汽相淀积，和快速化学汽相淀积等技术。术语“循环层淀积”，“原子层淀积”，“数字化学汽相淀积”，和“快速化学汽相淀积”在本文中可互换式使用，并涉及一些气相淀积技术，由此可以把两种或多种化合物按顺序加入处理室的一个反应区中，以便在衬底表面上淀积一薄层材料。
室200包括一个室体202，一个气体输送系统230，一个真空系统278，及一个控制单元280。室体202具有数个侧壁204，一个底部206，和一个衬里299。在室体202的一个侧壁204中形成一个缝隙阀208，以便提供一个自动控制装置(未示出)用的出入口，把一个衬底210，如一个200mm或300mm的半导体片或一个玻璃衬底放入室200和从室200中取出。
衬底支承件212设置在室体202中，以便将一个衬底210支承在其上的一个接收衬底的表面211上。一个起重电动机214升高和降低衬底支承件212。一个连接到起重电动机218上的平台升降台216安装在室200中，并升高和降低活动式穿过衬底支承件212设置的销钉220。上述销钉220升高和降低在衬底支承件212的接收表面211上方的衬底210。衬底支承件212可以包括一个真空吸盘、一个静电吸盘、或一个夹环，用于在处理期间将衬底212固定到衬底支承件212上。衬底支承件212还可以加热，以便加热设置于其上的衬底210。例如，衬底支承件212可以用一个埋入式加热元件如一种电阻加热器加热，或者可以用辐射热如设置在衬底支承件212上方的加热灯加热。
室体202还包括一个吹气环222，上述吹气环222设置在衬底支承件212上，以便限定一个吹气通道224。吹扫气体通过吹气通道224流动到衬底210的周边部分，以防在其上淀积。
真空系统278与一个泵送通道279连通，上述泵送通道279在室体202的侧壁204内形成。真空系统278抽空室体202中的气体，并在室202的泵送区266内部保持一个所希望的压力或所希望的压力范围。泵送区266在室体202内形成，同时包围衬底支承件212。
气体输送系统230和室体202限定室体202内的一个反应区264。反应区264与衬底支承件212成流体连通。更具体地说，反应区264包括室200内一个气源和衬底表面之间的任何容积。反应物气体或吹扫气体可以足够充满反应区264，并保证衬底210充分暴露于反应物气体或吹扫气体中。在常规化学汽相淀积中，现有技术的各室要求同时而均匀地提供各反应物组合式流动到衬底的整个表面，以便保证各反应物的共反应跨过衬底的整个表面均匀地发生。在原子层淀积中，室200按顺序将各反应物加到衬底表面上，以便提供将各反应物的交替式薄层吸附到衬底的表面上。结果，原子层淀积不要求各反应物流动同时到达衬底表面。而是，每种反应物的流动需要以一个量提供，上述量足够用于将一薄层反应物吸附在衬底的表面上。
因为反应区264包括一个比常规CVD(化学汽相淀积)室的内部容积小的容积，所以对一种特定的方法需要较小的气体量来充满反应区264。例如，在一个实施例中，对一个适合于处理200mm直径衬底的室，反应区264的容积为约1000cm3或更少，优选的是约500cm3或更少，而更优选的是200cm3或更少。对一个适合于处理300mm直径衬底的室，反应区264的容积为约3000cm3或更少，优选的是1500cm3或更少，而更优选的是600cm3或更少。在一个实施例中，衬底支承件212可以升高或降低，以便调节供淀积用的反应区264的容积。由于反应区264的较小容积，所以较少的气体，无论是一种淀积气体还是一种吹扫气体，都必需流入室200。因此，室200的物料通过量更大，并且由于使用较少量的容积，所以废料可以减至最少，同时降低了运行成本。
在图1的实施例中，气体输送系统230设置在室体202的上面部分处，以便向室体202提供一种气体如工艺过程气体和/或吹扫气体。气体输送系统230包括一个室盖232和一个穿过室盖232形成的扩展通道234。室盖232包括一个底部表面260，上述底部表面260加工成一定尺寸和形状，以便基本上覆盖住设置在室体202内的衬底210。
室盖232底部表面260其中至少一部分可以从扩展通道234到室的一个周边部分成锥形，以便跨过衬底210的表面(亦即从衬底中心到衬底边缘)提供一种改良的气体速度分布图。底部表面260可以包括一个或多个锥形表面，如一种笔直表面，一种凹形表面，一种凸形表面，或它们的组合。优选的是，底部表面取漏斗的形状成锥形。在室盖232的向下倾斜的表面260和衬底210的表面之间的最大流动截面积和最小流动截面积之比，优选的是小于约2，更优选的小于约1.5，更优选的是小于约1.3，及最优选的是约为1。
若不想与理论结合，则可以认为，一种跨过衬底210表面具有一均匀速度的气体，提供一种气体在衬底210上更均匀的淀积。可以认为，气体的速度与气体的浓度成正比，而气体的浓度与气体在衬底表面上的淀积速率成正比。因此，在表面的第一面积处比表面的第二面积处气体的速度高，可以认为在第一面积上提供更高的气体淀积。因此，可以认为具有向下倾斜底表面260的室盖提供更均匀的气体跨过衬底表面的淀积，因为向下倾斜的底表面提供气体跨过衬底表面的更均匀的速度，并因此提供更均匀的浓度。
室盖232的内表面其中至少一部分，包括扩展通道234和底表面260，具有一个表面粗糙度(Ra以μ计)优选的是在约46Ra和62Ra之间，优选的是约54Ra。此外，吹气环222的上表面和室衬里299的上表面可以具有一个表面粗糙度是在约46Ra和62Ra之间，优选的是约54Ra。可以认为，这些表面粗糙度增加了淀积到这些表面上的膜的粘着力。增加了的淀积膜的粘着力减少了淀积膜在衬底处理期间剥离的可能，并因此减少了衬底的颗粒物污染的可能。在一个优选实施例中，表面粗糙度由电解抛光提供，以便提供一种镜面抛光的表面。镜面抛光的表面有助于在其上产生一个气体的层流。在另一些较少优选的实施例中，表面粗糙度可以通过用一种合适的层构织表面提供。
控制室盖232的温度对防止气体在室盖232上分解，淀积，或凝结是很重要的。因此，室盖232可以包括冷却元件和/或加热元件，这取决于待穿过其输送的特定气体。例如，在室盖232中可以形成水通道(未示出)，以便冷却室盖232。在另一个例子中，可以将若干加热元件埋入或者可以包围室盖232的各元件，以便加热室盖232。
室盖232还可以包括一个室板部分270和一个帽部分272。帽部分272可以保持在一个温度范围内，而室板部分270可以保持在另一个温度范围内。例如，帽272可以用加热带或任何其它加热装置加热，以防止反应物气体凝结，而室板部分270保持在周围温度下。在另一个例子中，帽272可以加热，而室板部分270可以用穿过其形成的水通道(未示出)冷却，以防止反应物气体的热分解。
室盖232可以用不锈钢，铝，镀镍的铝，镍，用任何可与进行处理相容的合适材料制造。在一个实施例中，帽部分272包括不锈钢，而室板部分270包括铝。在一个实施例中，附加的板包括不锈钢。在一个实施例中，室盖232的扩展通道234和底部表面260可以包括一个镜面抛光的表面，以便帮助沿着室盖232的扩展通道234和底部表面260产生一种气体的层流。在另一个实施例中，气体导管250A，250B的内表面可以电解抛光，以便帮助产生气体穿过其的层流。
室盖232还包括一个节流口262，上述节流口262在室盖232的周边部分处，邻近衬底210的周边设置。节流口262可以是任何类型的障碍物，上述障碍物能限制气体在一个邻近衬底210周边的面积处的反应区264内流动。节流口262帮助保持反应区264内一个基本上均匀的压力。
例如，图2A示出节流口262一个实施例的示意剖视图。在这个实施例中，节流口262包括一个圆周形的侧向部分267。在一种情况下，吹气环222可以适合于使一种吹扫气体对准节流口262的侧向部分267。
作为另一个例子，图2B示出节流口262另一个实施例的示意剖视图。节流口包括一个圆周形向下延伸的凸起部分268。在一种情况下，吹气环222可以适合于使一种吹扫气体对准圆周形的向下延伸的凸起部分268。在一种情况下，向下延伸的凸起部分268的厚度是在约0.01英寸和约1.0英寸之间，更优选的是在0.01英寸和0.5英寸之间。
节流口262和衬底支承件212之间的间距通常是在约0.04英寸和约2.0英寸之间，而优选的是在0.04英寸和约0.2英寸之间。间距可以根据待输送的气体和淀积期间的方法条件改变。节流口262帮助反应区264容积内更均匀的压力分布，上述反应区264的容积通过使反应区264与泵送区266(图1)的非均匀压力分布隔开限定在室盖232和衬底210之间。
气体输送系统230还包括一个或多个与分开的气源成流体连通的阀(示出4个阀是242A，242B，252A，252B)。每个阀242A，242B各包括一个输送管路243A，243B，上述输送管路243A，243B各具有一个阀座组件244A，244B，而每个阀252A，252B各包括一个吹气管路245A，245B，上述吹气管路245A，245B各具有一个阀座组件246A，246B。每个输送管路243A，243B都各与相应的反应物气源238，239成流体连通，和各与扩展通道234相应的气体入口236A，236B成流体连通。输送管路243A，243B的阀座组件244A，244B控制反应物气体从反应物气源238，239到扩展通道234的流动。吹气管路245A，245B与吹扫气源240成流体连通，并在输送管路243A，243B阀座组件244A，244B的下游与输送管路243A，243B相交。吹气管路245A，245B的阀座组件246A，246B控制吹扫气体从吹扫气源240到输送管路243A，243B的流动。如果利用一种载气来从反应物气源238，239输送反应物气体，则优选的是用同一气体作为载气和吹扫气体(亦即利用氩气作为载气和吹扫气体)。
可编程逻辑控制器248A，248B可以耦合到阀242A，242B上，以便控制阀座组件244A，244B，246A，246B隔膜的动作。气动式驱动的阀可以提供许多低达约0.020秒时间周期的气体脉冲。用电驱动的阀可以提供许多低达约0.005秒时间周期的气体脉冲。用电驱动的阀通常需要利用一个传动装置耦合在阀和可编程逻辑控制器之间。
每个阀242A，242B都可以是一种零死容积阀，以便当阀的阀座组件244A，244B闭合时，能冲洗输送管路243A，243B中的反应物气体。当阀座组件244A，244B闭合时，吹气管路245A，245B可以提供一种吹扫气体，以便冲洗输送管路243A，243B。吹气管路245A，245B可以邻近输送管路243A，243B的阀座组件244A，244B设置。可供选择地，吹气管路245A，245B可以与输送管路243A，243B的阀座组件244A，244B稍微间隔开设置，如图所示，以便当阀座组件244A，244B打开时，吹扫气体不直接输送到阀座组件244A，244B中。如本文所用的一种死区容积阀定义为一种具有忽略不计的死容积(亦即不一定是零死容积)的阀。
每个阀242A，242B都可以适合于提供一种反应物气体238，239和吹扫气体240的组合式气流和/或它们分开的气流。关于阀242A，由阀242A所提供的反应物气体238和吹扫气体240一种组合式气流的一个例子，包括一个从吹扫气源240出来穿过吹气管路245A的吹扫气体连续流和从反应物气源238出来穿过输送管路243A的反应物气体脉冲。吹扫气体的连续流可以通过使吹气管路245A阀座组件246A的隔膜打开提供。来自反应物气源238的反应物气体脉冲可以通过打开和关闭输送管路243A阀座244A的隔膜提供。关于阀242A，由阀242A所提供的反应物气体238和吹扫气体240的分开气流其中一个例子包括从吹扫气源240出来穿过吹气管路245A的吹扫气体脉冲和从反应物气源238出来穿过输送管路243A的反应物气体脉冲。吹扫气体的脉冲可以通过打开和关闭阀252A阀座组件246A的隔膜提供。从反应物气源238出来的反应物气体脉冲可以通过打开和关闭阀242阀座244A的隔膜提供。
图3示出气体输送系统230的一个可供选择的实施例，上述输送系统230具有阀242A，242B，上述阀242A，242B安装在室体202的下方，并连接到一个或多个垂直穿过室体202的气体管路255上。各气体管路255也连接到气体导管250A，250B上。阀242A，242B也可以安装在其它位置中，和安装到其它室元件上，如安装在室盖232上。
在一种情况下，阀242A，242B连接到分开的反应物源238，239和分开的吹扫气源240，241上。分开的吹扫气源减少了阀242A，242B之间相互影响的可能性。在另一些实施例中，阀242A和242B可以如上所述，连接到同一吹扫气源240，241上。
图4示出阀242A，242B，252A，252B的示意剖视图。每个阀都包括一个具有3个口的阀体110，一个反应物入口112，一个吹扫气体入口114，和一个成流体连通的出口116。如上所述，反应物入口112与一反应物源238，239成流体连通。吹扫气体入口114与一吹扫气源240，241成流体连通，而出口116与处理室200成流体连通。
图5示出图4所示的阀示意透视图。阀体110可以包括一个或多个用于插入埋入式加热元件511的孔510。优选的是，各孔510最接近反应物入口112(在图4中示出)，以便将反应物加热，来防止反应物在阀242A，242B内凝结。阀体110还可以包括一个或多个用于插入热电偶装置521的孔520，以便监测阀体110的温度。例如，在一个反馈环路中可以利用一测得的温度来控制从电源加到加热元件511上的电流，这样可以将阀体温度保持或控制在所希望的温度下或所希望的温度范围内。各孔510和520可以与反应物入口112十分接近，优选的是在-约2.0mm或更小的距离下设置，以便更好的提供反应物入口的加热和更好的监测反应物入口112的温度。优选的是，用于一个埋入式加热元件的每个孔510朝平行于入口112，114和出口116的平面方向上设置，以便埋入式加热元件还可以提供入口112，114和出口116的更均匀加热。
图6示出一种隔膜134，上述隔膜134安装在阀室111内一个阀座120的上方。隔膜134是阀242A，242B其中之一的一个实施例示意剖视图。然而，隔膜通常是偏置在一个闭合位置中，并且选择性地在一个打开位置(未示出)和一个闭合位置之间移动。隔膜134固定到一个阀杆336上，上述杆件336贯穿一个阀帽332，并被阀帽332滑动式支承。阀杆336选择性地使隔膜134在一个闭合位置和一个打开位置之间移动。汽缸340固定到阀帽332的顶部并安装一个活塞342。阀杆336的顶部从阀帽332伸出并固定到活塞342的下表面上。一个弹簧344安放在阀帽332和活塞342的下表面之间，并把活塞342和阀杆336往上推。汽缸340在活塞342的上表面和汽缸340的内表面之间形成一个动作室346。
隔膜134可以用气动方法或电子学方法驱动。优选的是，隔膜可以通过控制来自一加压的气体供应150的加压气体，如空气或其它气体，用气动方法驱动，以便选择性地移动隔膜134。尽管隔膜134是用气动方法驱动，不过可以将一种用电子学方法控制的阀如电磁阀安装或耦合到汽缸340上，以便选择性地提供以增压的气体供应150出来的加压的气体通过一气体管路151。尽管一种用电子学方法控制的阀152提供加压的气体给隔膜组件130，但因为隔膜是用气动方法驱动，所以阀242A，242B是用气动方法驱动的阀。
隔膜134可以是偏置式打开或闭合，和可以分别驱动式闭合或打开。在一个打开位置时，隔膜134允许反应物从反应物入口112流动和吹扫气体从吹扫入口114流动二者穿过阀室111到入口116并进入室体202。在一个闭合位置时，隔膜134处于与阀座120接触，以防止反应物从反应物入口112穿过阀室111流动。在某些优选实施例中，在闭合位置时，隔膜134不阻挡吹扫气体从吹扫入口114穿过阀室111流动到出口116并进入室体202。阀室111还可以包括一个槽122，上述槽122在阀体110中阀座120的下方形成，以便不管隔膜134是处于闭合位置还是处于打开位置，吹扫入口114和出口116仍然处于流体连通。如附图所示，槽122是环形形状，但它可以是任何合适的形状。
阀座120可以是与阀体110成一个整体部件。在一个可供选择的实施例中，阀座120可以是一个与阀体110分开的部件。阀座120优选的是一种不与通过反应物入口122提供的反应物发生反应的化学性能稳定的材料制造。化学性能稳定的材料其中一些例子包括聚酰亚胺(PI)，聚四氟乙烯(PTFE)，聚三氟氯乙烯(PCTFE)，全氟烷氧基(PFA)，及其它合适的聚合物。在一些较少优选的实施例中，阀座120可以用金属、金属合金，及其它合适的材料制造。在某些实施例中，根据由其提供的反应物，将阀体110加热到在约80℃和约90℃之间的一个温度，以便防止反应物凝结在隔膜134或其它的阀242A，242B元件上。如果用氨气作为一种反应物，则阀座120优选的是用一种化学性能稳定的聚酰亚胺如VespelCR-6100制造。现已证明，氨气在80℃或高于80℃的温度下与聚酰亚胺VespelCR-6100是化学上惰性的，而氨气在80℃或高于80℃的温度下可以与其它的聚酰亚胺反应。
关于阀242A，242B的操作，将可编程逻辑控制器(PLC)248A，248B耦合到阀242A，242B上，以便控制电信号到用电子学方法控制的阀152。用电子学方法控制的阀152当打开时，通过连接器349将加压的气体供给到动作室346中，同时形成一个压力，所述压力迫使活塞342和阀杆336向下顶着弹簧344的弹性力。隔膜134的中央部分被阀杆336向下压，并接触阀座120，同时关闭反应物从反应物入口112到出口116的流入。当隔膜134接触阀座120时，隔膜134不阻塞槽122，并且吹扫气体可以以吹扫气体入口114流到出口116。用电子学方法控制的阀152当关闭时，停止供应加压的气体，并使动作室346内部加压的气体减压。当停止供应加压的气体时，动作室346的内部压力减压，活塞342和阀杆346借助于弹簧344的弹性力升起。当活塞342和阀杆336升起时，隔膜134移动离开阀体110的阀座120，同时让反应物从反应物入口112流入到出口116。
隔膜134在一个打开位置和一个闭合位置之间移动，以便提供反应物到出口116和进入室体202的脉冲。因为处在闭合位置的隔膜134不阻塞槽122，所以可以提供吹扫气体的连续流动从吹气管路114穿过阀室111并向外到出口116。结果，反应物的脉冲可以按剂量投入通过阀室111提供的吹扫气体连续流。通过阀室111提供的脉冲气体连续流冲洗在反应物脉冲之间留在阀室111中残留的反应物。在一种情况下，阀242A，242B其中每个都具有一个零死容积，因为在吹扫气体穿过阀体110到反应物入口112的阀座120的流路之间有可忽略不计的死容积。
图7是一个隔膜如阀242A或242B其中之一的隔膜134在一个闭合位置和一个打开位置之间移动的曲线图。如本文所用的术语“响应时间”定义为一个阀的隔膜从一打开位置移动到一个闭合位置或是从一个闭合位置移动到打开位置的时间。将阀的隔膜从一个打开位置移动到一个闭合位置的响应时间与阀的隔膜从一个闭合位置移动到一个打开位置的响应时间二者可以相同，或者可以不同，但优选的是大致相同。优选的是，阀242A，242B具有一响应时间为约50msec(毫秒)或更少，更优选的是20msec或更少。可以看出，一个阀如阀242A或242B，在动作室的内部容积为约2.8cm3的情况下，具有一响应时间为约40msec或更少。可以看出，一个阀如阀242A或242B，在动作室的内部容积为约0.9cm3情况下，具有一响应时间为约15msec或更少。
减少一个阀组件的响应时间，能在一段时间范围内提供更多的反应物脉冲循环。因此，处理衬底的生产能力增加。然而，阀242A，242B可以操纵到任何所希望的脉冲时间720。如本文所用的术语“脉冲时间”定义为将一个隔膜从一完全闭合位置移动到完全打开位置并回到完全闭合位置的时间。可以操纵阀242A，242B，以便提供脉冲时间为约1.0秒或更少，约500msec或更少，和甚至约200msec或更少。
与隔膜被一螺线管上下驱动相比，隔膜134的气动控制提供隔膜134贴着阀座120的“软”着陆。“软”着陆减少了隔膜在一打开位置和一闭合位置之间移动期间形成颗粒物，上述颗粒物由隔膜134顶着阀座120冲击引起。“软”着陆与通过一个螺线管直接移动隔膜所引起的“硬”着陆相比，还提供反应物以更多的层流穿过阀组件100。
在某些实施例中，动作室346的内部容积包括一个小容积，优选的是约3.0cm3或更少，更优选的是约1.0cm3或更少。如本文所用的术语“动作室的内部容积”定义为当动作室内部的压力减压时动作室的内部容积，并包括连接器349和动作室346与电气控制阀152之间任何气体管路的内部容积。动作室346的小内部容积可以更迅速地加压，结果可以更迅速地驱动隔膜134。
用电子学方法控制的阀152安装在隔膜组件130的汽缸340上，以便减少气体管路到动作室的内部容积增加的容积。气体管路增加的容积将增加动作室346的内部容积，并因此将增加给动作室346加压所需的时间，及因此增加阀242A，242B的响应时间。在一些可供选择的实施例中，如果利用一个气体管路来将用电子学方法控制的阀152连接到隔膜组件130的汽缸340上，则管路的长度优选的是约为1.0英寸或更少，以便减少动作室的内部容积。
将增压的气体供应150连接到用电子学方法控制的阀152上的气体管路151具有一内径为大于约0.125英寸，更优选的是约0.25英寸或更大。气体管路151的较大内径有助于通过提供一个较大的加压气体穿过其的传导充满动作室346的内部容积。结果，供给加压的气体到用电子学方法控制的阀152上的气体管路151的较大内径减少了阀组件242A，242B的响应时间。
再次参见图1，阀242A，242B通过气体入口236B与扩展通道234成流体连通，上述气体入口236B连接到输送管路243B上。在一种情况下，气体入口236A，236B邻近扩展通道234的上面部分237设置。在另一种情况下，气体入口236A，236B沿着上面部分237和下面部分235之间的扩展通道234长度设置。阀242A，242B的输送管路243A，243B可以通过气体导管250A，250B连接到气体入236A，236B上。气体导管250A，250B可以与阀242A，242B成为整体，或者可以与阀242A，242B分开。在一种情况下，阀242A，242B可以极接近地连接到扩展通道234上，以便减少阀242A，242B与气体入口236A，236B之间输送管路243A，243B和气体导管250A，250B中的任何不必要的容积。
扩展通道234具有一个内径，上述内径从扩展通道的上面部分237到下面部分235逐渐增加。在一个特定的实施例中，用于一个适合于处理200mm直径衬底的室的扩展通道234的内径，在扩展通道234的上面部分237处是在约0.2英寸和约1.0英寸之间，更优选的是在约0.3英寸和约0.9英寸之间，和更优选的是在0.3英寸和约0.5英寸之间，而在扩展通道234的下面部分235处是在约0.5英寸和约3.0英寸之间，优选的是在约0.75英寸和约2.5英寸之间，而更优选的是在约1.1英寸和约2.0英寸之间。在另一个特定实施例中，用于适合处理300mm直径衬底的室的扩展通道234的内径，在扩展通道234的上面部分237处是在约0.2英寸和约1.0英寸之间，更优选的是在约0.3英寸和约0.9英寸之间，及更优选的是在0.3英寸和约0.5英寸之间，而在用于300mm衬底的扩展通道234的下面部分235处是在约0.5英寸和约3.0英寸之间，优选的是在约0.75英寸和约2.5英寸之间，及更优选的是在约1.2英寸和约2.2英寸之间。一般，上述尺寸应用于一种扩展通道，上述扩展通道适合于提供一个总气流是在约500sccm和约3000sccm之间。然而，上述尺寸可以改变，以便适应任何穿过其的气流。
扩展通道234可以成形为一种截锥体(包括类似于截锥体的形状)。无论是提供一种气体朝向扩展通道234的壁，还是直接向下朝向衬底210，当气流穿过扩展室234时，由于气体的膨胀作用，所以气流的速度降低。气流的速度降低帮助减少气体吹去吸附在衬底210表面上反应物的可能性。
若不想与理论结合，可以认为，扩展通道234的直径从上面部分237到下面部分235逐渐增加，允许流过扩展通道234的气体绝热膨胀较少，上述绝热膨胀较少有助于控制气体的温度。流过扩展通道234的气体突然绝热膨胀可能降低气体的温度，同时造成气体凝结和形成颗粒物。形成较少的气体绝热膨胀，可以使更多的热量转移到气体或从气体中转移，并因此可以更容易控制气体的温度。逐渐变化的扩展通道可以包括一个或多个锥形内表面，如一种锥形笔直表面，一种凹形表面，一种凸形表面，或它们的组合，或者可以包括一个或多个锥形内表面的若干分段(亦即，一部分是锥形，和一部分不是锥形)。
图8是室盖232扩展部分234其中一个实施例的顶部剖视图。每个气体导管250A，250B可以与气体导管250A，250B的中心线和与扩展通道234圆心的半径线304成α角设置。气体穿过优选的是成一个角度α(亦即当α＞0°时)设置的气体导管250A，250B进入，使气体朝一个圆方向流动，如箭头310A(或310B)所示。与直接笔直对着扩展通道(亦即当α＝0°时)相反，成一个角度α提供气体，有助于提供更多的层流而不是紊流通过扩展通道234。可以认为，通过扩展通道234的层流导致一种改良的吹扫扩展通道234的内表面和室盖232的其它表面。相反，紊流可能不均匀地流过扩展通道234的内表面和其它表面，并且可能包含其中没有气流的死点或驻点。在一种情况下，气体导管250A，250B和相应的气体入口236A，236B相互隔开，并使一个流动朝向同一圆方向(亦即顺时针或反时针)。
图9是室盖扩展通道另一个实施例的顶部剖视图。所述室盖扩展通道适合于通过一个气体入口636接收来自一个气体导管650的单一气流，上述一个气体导管650连接到一个或多个阀(未示出)上。气体导管650可以与气体导管650的中心线602和与扩展通道234圆心的半径线604成一个角度α设置。成一个角度α(亦即当α＞0°时)设置的气体导管650使气体朝一个圆方向流动，如箭头610所示。
图10是室盖扩展通道另一个实施例的顶部剖视图，上述室盖扩展通道适合于接收3种气流，上述3个气体从3个气体导管750A，750B，750C在一起，部分在一起(亦即3个气流的其中2个在一起)或分开通过3个入口736A，736B，736C，上述气体导管750A，750B，750C中每个导管都连接到一个或多个阀(未示出)上。气体导管750A，750B，750C可以与气体导管750A，750B，750C的中心线和与扩展通道734圆心的半径线704成一个角度α设置。成一个角度α(亦即当α＞0°时)设置的气体导管750A，750B，750C使气体朝一个圆方向流动，如箭头710所示。
图11示出扩展通道234的剖视图，同时示出穿过扩展通道234的两种气流的简化表示。每个气体导管250A，250B和气体入口236A，236B都可以用与扩展通道纵向轴线290成任何关系设置。每个气体导管250A，250B和气体入口236A，236B优选的是垂直于(其中+B，-B＝90°)纵向轴线290设置，或者从气体导管250A，250B的中心线302A，302B到纵向轴线290成一个角度+B或一个角度-B(其中0°＜+B＜90°或0°＜-B＜90°)设置。因此，气体导管250A，250B可以如图3所示垂直于纵向轴线290水平设置，可以向下成一个角度+B，或者可以向上成一个角度-B，以便提供一种气流，所述气流朝向扩展通道234的壁而不是直接向下朝向衬底210，这样帮助减少吹出吸附在衬底210表面上的反应物的可能性。此外，气体导管250A，250B的直径可以从阀242A，242B的输送管路243A，243B到气体入口236A，236B逐渐增加，以便在气体进入扩展通道234之前帮助降低气流的速度。例如，气体导管250A，250B可以包括一个逐渐增加的内径，或者可以包括多个具有逐渐增加内径的连接的导管。
尽管通过扩展通道234的确切流动模式还不知道，但可以认为，圆形流动310可以作为一种“涡流”或“螺旋”流动402A，402B通过扩展通道234，如箭头402A，402B所示。在一种情况下，涡流可以帮助形成更有效的吹扫扩展通道234，这是由于涡流模式跨过扩展通道234内表面的扫除作用。
在一个实施例中，使气体入口236A，236B和衬底210之间的距离变得足够远，以便“涡流”流动402分散成一种向下流动，如箭头404所示，因为一种跨过衬底210表面的螺旋流动可能是不理想的。可以认为，“涡流”流动402和向下流动404是以一种有效地吹扫室盖232和衬底210的层流方式前进。在一个特定实施例中，扩展通道234上面部分237与衬底210之间的距离为约1.0英寸或更大，更优选的是约2.0英寸或更大。在一个特定实施例中，距离410的上限取决于实际限制。例如，如果距离410很长，则气体穿过扩展通道234的滞留时间也长，因而用于气体淀积到衬底上的时间也长，并因而生产能力低。此外，如果距离410很长，则制造扩展通道234很困难。一般，距离410的上限对一个适合于处理200mm直径衬底的室来说可以是3英寸或更大，而对一个适合于处理300mm直径衬底的室来说可以是5英寸或更大。
图12示出气体在室盖232的底表面260和衬底210的表面之间两个不同位置502，504处流动的示意图。气体在任何流动分段处，亦即在任何半径处的速度，在理论上由下面方程式决定：
(1)Q/A＝V
式中“Q”是气体的流量。“A”是流动的载面积。“V”是气体的速度。气体的速度与流动的截面积(H×2πR)成反比，其中“H”是流动截面的高度，和2πR是流动截面的周长。换句话说，气体的速度与流动截面的高度“H”和流动截面的半径“R”成反比。
将位置502和位置504处流动截面的速度进行比较，同时假定在所有位置处室盖232的底表面260与衬底210的表面之间的气体流量“Q”相等，则气体速度在理论上可以通过让各流动截面积“A”相等而变成相等。为了使位置502和位置504处的流动截面积相等，因为R2＞R1，所以在位置502处的高度H1必须大于在位置504处的高度H2。
在操作时，衬底210利用一个自动控制装置(未示出)通过开口208输送到室200中。通过升降销220和自动控制装置的协同操作，将衬底210设置在衬底支承件212上。衬底支承件212将衬底210升起成与室盖232的底表面紧密相对。第一气流可以通过阀242A注入室200的扩展通道234，上述第一气流注入与通过阀242B注入室200的第二气流一起或分开(亦即脉冲)。第一气流可以包括一个来自吹扫气源240的吹扫气体连续流和来自反应物气源238的反应物气体脉冲，或者可以包括来自反应物气源238的反应物气体脉冲和来自吹扫气源240的吹扫气体脉冲。第二气流可以包括来自吹扫气源240的吹扫气体连续流和来自反应物气源239的反应物气体的脉冲，或者可以包括来自反应物气源239的反应物气体脉冲和来自吹扫气源240的吹扫气体脉冲。气流作为一种涡流模式402穿过扩展通道234，上述涡流模式402提供一种跨过扩展通道234内表面的扫除作用。涡流模式402分散成一种向下流动404朝向衬底210的表面。当它穿过扩展通道234时，气流的速度降低。然后气流跨过衬底210的表面和跨过室盖232的底部表面260前进。向下倾斜的室盖232底表面260帮助减少气流跨过衬底210表面的速度变化。然后气流通过节流262前进并进入室200的泵送区266。过量的气体，副产品等流入泵送通道279，和然后通过真空系统278从室200中排放。在一种情况下，气流以一种层流方式穿过扩展通道234和在衬底210的表面与室盖232的底表面260之间前进，上述层流方式帮助将反应物气体均匀暴露在衬底210的表面上，并有效地吹扫室盖232的内表面。
图13和14示出一种气体输送系统的可供选择的实施例，上述气体输送系统能按照本发明所述实施原子层淀积。因为某些元件与上述的那些元件相同或类似，所以在合适的地方采用相同的标号。
更具体地说，图13示出一种具有一个气体输送装置830的室800，上述气体输送装置830包括一个室盖832，该室盖860具有一个基本上是平的底表面860。在一种情况下，节流口262和衬底支承件210之间的间距是在约0.04英寸和约2.0英寸之间，更优选的是在约0.04英寸和约0.2英寸之间。
图14示出一种具有一个气体输送装置930的室900，上述气体输送装置930包括一个室盖932，所述室盖932提供一个具有一小容积的反应区964，和提供一种向下倾斜或漏斗形底部表面960。气体源937通过一个或多个阀941连接到通道933上。在一种情况下，通道933具有一个很长的长度，以便减少通过阀941加入的气体吹出吸附在衬底表面210上的反应物的可能性。
图15是本发明用的一种气体箱1000的一个实施例示意图。为了清楚和说明方便起见，气体箱1000将参照图3所示的室200进行说明。气体箱1000提供一种或多种化合物给阀242A，242B。气体箱1000可以是一个或多个气体箱分段(示出两个分段1000A，1000B)。每个气体箱分段1000A，1000B还可以包括一个通向相应吹扫气源240，241的连接部分1010。各气箱分段1000A，1000B还可以包括各种不同的阀，上述阀用于调节或另外控制提供给阀242A，242B的化合物。
图16是罐1300一个实施例的示意剖视图，上述罐1300用于通过由一种固体反应物源如五二甲胺钽(PDMAT)升华产生一种气体。罐1330可以适合于由一液体反应物源提供一种气体。一般，罐1330包括一个侧壁1202，一个盖1204，和一个封闭一内部容积1238的底部1232。盖1204或侧壁1202的至少其中之一包括一个入口1206和一个出口1208用于气体的进出。入口和出口1206，1208连接到阀1112，1114上，上述阀1112，1114装配一配合的拆卸配件1236A，1236B，以便于从气体输送系统230取下罐1300。可任选地，将一个捕油器1250连接在出口1208和阀1114之间，以使捕获在流到处理室200的气体中可能存在的油粒。
罐1300的内部容积1238分开成一个上面区1218和一个下面区1234。源固体1214至少部分地装满下面区1234。一个管道1302设置在罐1300的内部容积1238中，并适合于使罐1300内的气流朝向远离源固体1214的方向，同时有利地防止流出管道1302的气体直接碰撞源固体1214和使颗粒物变成悬浮在空气中和通过出口1208带走并进入处理室200。
管道1302在一第一端1304处连接到入口1206上。管道1302从第一端1304延伸到一第二端1326A，上述第二端1326A设置在上面区1218中源固体1214的上方。第二端1326A可以适合于使气流朝向侧壁1202，因此防止气流直接(线性)穿过在口1206，1208之间的罐1300，同时形成一个延长的平均流路。
在一个实施例中，管道1302第二端1326A的出口1306相对于罐1300的中心轴线1308成一个约15°-约90°的角度设置。在另一个实施例中，管道1302具有一个“J”形第二端1326B，上述“J”形第二端1326B使离开出口1306的气流朝向罐1300的盖1204。在另一个实施例中，管道1302具有一个第二端1326C，所述第二端1326C具有一个封闭管道1302末端的塞或帽1310。第二端1326C具有至少一个开口1328，上述开口1328在管道1302的侧面靠近帽1310形成。离开开口1328的气体通常朝向垂直于中心垂线1308并远离设置在罐1300下面区1234中的源固体1214。可任选地，至少一个如上所述的隔板1210(用虚线示出)可以设置在罐1300内，并与上述管道1302实施例的其中之一串联使用。
在操作时，罐1300的下面区至少部分地装有一种源固体1214。可供选择地，可以将一种液体1216加到源固体1214中，以便形成一种浆料1212。将罐1300保持在所希望的压力下，并用一电阻加热器1230加热到所希望的温度，上述电阻加热器1230靠近罐1300设置。一种载气如氩气以一个所希望的速率流过入口1206和管道1302进入上面区1218。管道1302的第二端1326A使在延长的平均流路中载气流朝向远离出口1208的方向，同时有利的是增加了载气在罐1300上面区1218中的停留时间，并防止载气在源固体1214上直接流动，以使颗粒物产生最少。在罐1300中增加的停留时间有利的是增加了升华的固体蒸汽在载气内的饱和程度，而同颗粒物产生的减少改良了产品的生产率，节省了源固体，并减少了下游污染。
参见图15，室200和气体箱1000的各种元件的温度可以控制，以便减少室中不想要的颗粒形成。例如，控制温度可以防止室200和气体箱1000的各种元件上的气体分解，淀积，或凝结。例如，可能理想的情况是，反应物从反应物源到气体分配系统230的流动路线是处在一比较高的温度下，以防止流动路线中反应物的凝结(亦即蒸气变成固体或蒸汽变成液体)。可能理想的情况是，室体202和室盖232都处在比较低的温度下，以防止反应物淀积在室体和室盖的表面上。
在一个实施例中，罐1300保持在约60℃和约70℃之间的一个温度下。从罐1300到阀242A和从罐1300到前级管道的气体管路(用区域1330代表)，如通过加热带或其它加热装置保持在约80℃和约90℃之间的一个温度下。阀242A保持在约80℃和约90℃之间的一个温度下。从阀242A到室体202的气体管路255(用区域1332代表)，如通过加热带或其它加热装置保持在约85℃和约95℃之间的一个温度下。优选的是，有一个反应物从罐1300到室体202的流动路线稍微增加的温度梯度，以便反应物的任何凝结都将朝罐方向流动而不是朝室体202方向流动。此外，吹扫气体源240优选的是提供一种在约85℃和约95℃之间一个温度下的经过预热吹扫气体如氩气。经过预热的吹扫气体帮助减少在区域1332处颗粒物形成的可能性，因为在区域1332处的各气体膨胀而在区域1332处增加了容积。
然后，将从室板部分270到帽272的管路255(用区域1334代表)，如通过一筒形加热器或加热带保持在约45℃和约55℃之间的一个温度下，在另一个实施例中，区域1334不直接加热(亦即没有直接控制区域1334温度的加热装置)。
在一个实施例中，从吹扫气体源和含氮源到阀242B的气体管路不加热。阀242B不加热。从阀242B到室体202的气体管路255和从室板部分270到帽272的气体管路255也不加热。
在一个实施例中，室侧壁204保持在约20℃和约25℃之间的一个温度下。室板部分270保持在约25℃和约35℃之间的一个温度下。帽272保持在约30℃和约40℃之间的一个温度下，室侧壁202可以通过穿过其形成通道295(图1)，并通过上述通道提供温度控制流体，如一种冷却流体或加热流体，保持在一个所希望的温度下。
在一个实施例中，室板部分270和帽272不包括加热或冷却元件。室板部分270和帽272的冷却通过从室板部分270和帽272到室侧壁204的热传递提供。在另一些实施例中，室板部分270和帽272可以包括冷却元件和/或加热元件。在一个实施例中，穿过室体202的气体管路255不接触室体202和/或通过一个绝热体与室体202分开，上述绝热体使气体管路255与室体202之间的热传递减至最少。
在某些实施例中，阀242A，242B与室盖232分开或远离室盖232安装，如图1所示安装在室体202的下方，以便简化室盖232温度的控制。例如，一个安装到室盖232上或紧密靠近室盖232安装的经过加热的阀可以将热量传递到室盖232上。传到室盖232上的热量可能引起或增加气体在室盖内表面上，如在膨胀通道234和底表面260上的不想要的淀积。远离盖安装的阀242A，242B不显著增加反应区264的容积，因为有很少或者没有气体返流到气体导管250A、250B中。例如，在由阀242A，242B提供吹扫气体连续流同时反应物按剂量加入吹扫气体流中的情况下，有一个非常恒定的正向气体流进入室体202中，上述正向气体流通过气体导管252A，252B提供。
控制单元280，如一种编好程序的个人计算机，工作站计算机等，可以连接到室200上，以便控制各处理条件，如图1所示。例如，控制单元280可以成形为在衬底处理顺序的不同阶段期间，控制从气源238，239，240出来的各种工艺流程气体和吹扫气体通过阀242A，242B的流动。控制单元280可以包括一个中央处理单元(CPU)282，配套电路284，和含有相关控制软件283的存储器286。
控制单元280可以是任何形式通用计算机处理器的其中之一，上述通用计算机处理器可以在工业调整中用于控制各种不同的室和子处理器。CPU282可以用任何合适的存储器286，如随机存取存储器，只读存储器，软盘驱动器，硬盘，或数字存储，本地或远程的其它形式。各种配套电路可以耦合到CPU282上用于支承室200。控制单元280可以耦合到另一个控制器上，上述另一个控制器邻近各单元室元件，如阀242A，242B的可编程逻辑控制器248A、248B设置。控制单元280与室200的各种其它元件之间的双向通信通过许多信号电缆处理，上述许多信号电缆集体地称之为信号总线288，上述信号总线288的其中一部分在图1中示出。除了从气源238、239、240和从阀242A、242B的可编程逻辑控制器248A、248B控制工艺流程气体和吹扫气体之外，控制单元280还可以成形为担负自动控制晶片处理中所用的其它活动，如晶片运输，温度控制，室抽真空，连同其它活动一道，其中某些活动在本文其它地方说明。
上述的处理室200和气体输送装置230，可以用来有利地执行各元素的循环淀积，或者执行各种化合物或合金/组合薄膜的循环淀积，上述各元素包括但不限于，钽、钛、钨和铜，而上述各种化合物或合金/组合薄膜包括但不限于，一个衬底表面上的氮化钽、氮化钽硅、氮化钛、氮化钛硅、氮化钨、氮化钨硅、及铜铝。如上所述，处理室200和气体输送装置230，也可以用来有利地执行各种材料在一个衬底表面上的化学汽相淀积。
如本文所用的，“衬底表面”涉及在其上完成薄膜处理的任何衬底表面。例如，衬底表面可以包括硅，氧化硅、掺杂的硅、锗、砷化镓、玻璃、蓝宝石及任何其它材料如各种金属，金属氮化物，金属合金，及其它导电材料，上述材料视用途而定。衬底材料还可以包括介电材料如二氧化硅和掺碳的二氧化硅。
如本文所用的“循环淀积”涉及依次加入两种或多种反应性化合物，以便在一个衬底表面上淀积单层材料。两种或多种反应性化合物交替式加入一个处理室的反应区。每种反应性化合物通过一个时间延迟分开，以便让每种化合物粘附在衬底表面上和/或在衬底表面上反应。在一种情况下，将一种第一前体或化合物A在第一时间延迟之后脉冲加入反应区中。接着，将一种第二前体或化合物B在第二时间延迟之后脉冲加入反应区中。当希望一种三元材料，如氮化钛硅时，例如，将一种第三化合物(C)在第三时间延迟之后按剂量/脉冲加入反应区中。在每个时间延迟期间，都将一种惰性气体如氩加入处理室中，以便吹扫反应区或者用别的办法除去反应区中任何残留的反应性化合物。可供选择地，吹扫气体可以在淀积过程中自始至终连续地流动，以便在时间延迟期间，各反应性化合物的脉冲之间仅是吹扫气体流动。各反应性化合物可供选择地脉冲至在衬底表面上形成所希望的薄膜或薄膜厚度时为止。
如本文所用的“脉冲”或“剂量”预定是涉及瞬时或不连续地加入一个处理室反应区的一种特定化合物的量。在每个脉冲内一种特定化合物的量可以在超出时间时变化，这取决于脉冲的持续时间。每个脉冲的持续时间是取决于许多因素的变量，上述许多因素如，例如，所用处理室的容积容量，连接于其上的真空系统，及特定化合物自身的挥发性/反应性。
每个脉冲/剂量的持续时间都是可变的，并且可以调节，以便例如适应处理室的容积容量及连接于其上的真空系统的能力。此外，一种化合物的加剂量时间可以按照化合物的流动速率，化合物的压力，化合物的温度，加剂量阀的类型，所用控制系统的类型，及化合物吸附到衬底表面上的能力等改变。加剂量时间还可以根据所形成层的类型和装置的几何形状改变。一般，加剂量时间应该足够长，以便提供一个足够吸附/化学吸附到基本上是衬底整个表面上的化合物容积，并在其上形成一层所希望的化合物厚度。
术语“化合物”预定包括一种或多种前体，氧化剂、还原剂、反应剂和催化剂，或它们的组合。术语“化合物”还预定包括一组化合物，如当在处理室中同时加两种或多种化合物时的情况。例如，一组化合物可以包括一种或多种催化剂和一种或多种前体。术语“化合物”还预定包括如通过离解或电离作用处于活化状态或别的激励状态的一种或多种前体，氧化剂，还原剂，反应剂和催化剂，或它们的一种组合。
可以认为，用来在一个衬底表面上物理吸附，吸附、吸收，或化学吸附一单层反应剂的化学吸力是自限制的，其中在一规定的脉冲期间只有一个单层可以淀积到衬底表面上，因为衬底表面具有一有限的位置可供反应剂利用。一旦有限数的位置被反应剂占据，则将阻止反应剂的进一步淀积，循环可以重复到一个所希望的氮化钽层厚度。
为了清楚和便于说明起见，方法将进一步说成是它涉及用一种循环淀积技术淀积一种氮化钽(TaN)阻挡层。一种含钽化合物如五二甲胺基钽(PDMAT；Ta(NMe2)5)的脉冲可以通过阀242A由气源238加入。含钽化合物可以借助于一种载气提供，上述载气包括但不限于氦(He)、氩(Ar)、氮(N2)、氢(H2)及它们的组合。一种含氮化合物如氨的脉冲可以通过阀242A由气源239加入。载气也可以用来帮助输送含氮化合物。吹扫气体如氩可以通过阀242A和/或阀242B由气源240加入。在一种情况下，吹扫气流可以通过阀242A，242B由气源240连续提供，以便起含钽化合物脉冲和含氮化合物脉冲之间吹扫气体的作用，和在含钽化合物和含氮化合物二者的脉冲期间起一种载气作用。在一种情况下，通过两个气体导管250A、250B输送吹扫气体提供反应区264更完善的吹扫，而不是通过一个气体导管250A、250B提供的一种吹扫气体。在一种情况下，反应物气体可以通过一个气体导管250A、250B输送，因为一种反应物气体如一种含钽化合物或一种含氮化合物的流动均匀性不象吹扫气体，由于反应物在衬底结构表面上的自限制吸附过程的均匀性那样关键。在另一些实施例中，吹扫气体可以用脉冲提供。在另一些实施例中，吹扫气体可以用多于或少于两个气流提供。在另一些实施例中，一种含钽气体可以用一个以上气流(亦即两个或多个气流)提供。在另一实施例中，一种含氮气体可以用一个以上气流(亦即两个或多个气流)提供。
含钽化合物的一些例子，包括，但不限于，其它的有机金属化合物前体或它们的衍生物，如五乙基甲基胺钽(PEMAT：Ta[N(C2H5CH3)2]5)，五二乙基胺钽(PDEAT；Ta(NEt2)5)，及PEMAT、PDEAT或PDMAD的任何或所有的衍生物。另一些含钽化合物在不限制情况下包括TBTDET(Ta(NEt2)3NC4H9或C16H39N4Ta)和钽卤化物，例如TaX5，此外X是氟(F)，溴(Br)或氯(Cl)，和/或它们的衍生物。可以使用另一些含氮化合物，上述另一些含氮化合物包括，但不限于，NxHy，其中x和y是整数(比如，肼(N2H4))，二甲肼((CH3)2N2H4)，特丁肼(C4H9N2H3，苯肼(C6H5N2H3)，其它的肼衍生物，一种氮等离子体源(比如，N2，N2/H2，NH3，或一种N2H4等离子体)，2，2’-偶氮异丁烷((CH3)6C2N2)，乙基叠氮化物(C2H5N3)，及其它合适的气体。吹扫气体的另一些例子包括，但不限于，氦(He)，氮(N2)，氢(H2)，其它气体，及它们的组合。
氮化钽层形成说成是从在衬底上吸附一层含钽化合物开始，接着吸附一层含氮化合物。可供选择地，氮化钽层形成可以从在衬底上吸附一层含氮化合物开始，接着吸附一层含钽化合物。而且，在另一些实施例中，可以在各反应物气体的脉冲之间单独使用泵抽真空，以防各反应物气体混合。
含钽化合物每个脉冲的持续时间，含氮化合物每个脉冲的持续时间，及各反应物脉冲之间吹扫气体的持续时间都是可变的，并取决于所用淀积室的容积容量及与其连接的真空系统。例如，(1)一种气体的下面室压力将要求较长的脉冲时间；(2)一个较低的气体流速对室压力将要求一较长的时间，以便增加和稳定要求一较长的脉冲时间；及(3)一个大容积室采取充填时间越长，则室压稳定这种要求一较长脉冲时间越长。同样，每个脉冲之间的时间也是可变的，并取决于处理室的容积容量及与其连接的真空系统。一般，含钽化合物或含氮化合物的一个脉冲持续时间应足够长，以便吸附一层化合物。在一种情况下，当一种含氮化合物的一个脉冲进入时，一种含钽化合物的一个脉冲仍可以处在室中。一般，吹扫气体和/或泵抽真空的持续时间应长到足够防止含钽化合物的脉冲和含氮化合物的脉冲在反应区中混合在一起。
一般，含钽化合物一个脉冲时间为约1.0秒或更少和含氮化合物的一个脉冲时间为约1.0秒或更少，通常足够在一衬底结构上吸附交替的单层。含钽化合物脉冲和含氮化合物脉冲之间约1.0秒或更少的时间通常足够用于吹扫气体，不管是一种连续吹扫气体还是一种吹扫气体的脉冲，防止含钽化合物的脉冲和含氮化合物的脉冲在反应区中混合在一起。当然，反应物较长的脉冲时间可用来保证含钽化合物和含氮化合物的吸附，而反应物各脉冲之间的较长时间可用来保证除去反应副产物。
在淀积期间，衬底210可以保持在大约低于一选定的含钽化合物的热分解温度下。在一低于约100乇，优选的是低于约50乇的室压下，本文所确定的与含钽化合物一起用的示例性加热温度范围大约是在约20℃和约500℃之间。当含钽气体是PDMAT时，加热温度优选的是在约100℃和约300℃之间，更优选的是在约175℃和250℃之间，而室压是在约1.0和约5.0乇之间。在另一些实施例中，应该理解，其它的温度和压力也可以用。例如，可以利用一个超过热分解温度的温度。然而，温度应如此选定，以便高于50％的淀积活性是通过吸附处理。在另一个例子中，可以利用一个高于热分解温度的温度，其中在每个前体淀积期间的分解量如此加以限制，以使生长模式将类似于原子层淀积生长模式。
通过循环淀积来淀积氮化钽层的一个示例性方法，包括通过阀242A从气源238以一个在约100sccm和约1000sccm之间，优选的是在100sccm和约400sccm之间的一个流速，提供五二甲胺基钽(PDMAT)脉冲，脉冲时间为约0.5秒或更少，约0.1秒或更少，或者由于反应区264的较小容积为约0.05秒或更少。氨气脉冲可以通过阀242B从气源239以一个在约100sccm和约1000sccm之间，优选的是在200sccm和约600sccm之间的流速提供，脉冲时间为约0.5秒或更少，约0.1秒或更少，或者由于反应区264的较小容积为约0.05秒或更少。通过阀242A，242B从气源240可以连续地提供在约100sccm和约1000sccm之间，优选的是在约100sccm和约400sccm之间的流速下的氩吹扫气体。含钽化合物脉冲和含氮化合物的脉冲之间的时间可以是约0.5秒或更少，约0.1秒或更少，或者由于反应区264较小的容积为0.07秒或更少。可以认为，为用一种反应物气体和/或一种吹扫气体充满反应区264，需要一脉冲时间为约0.016秒或更多。在约1.0和约5.0乇之间的室压下，加热器温度优选的是保持在约100℃和约300℃之间。这种方法提供一种厚度在每个循环约0.5和约10的氮化钽层。可以重复交错的顺序直至达到所希望的厚度为止。
在一个实施例中，层如一个氮化钽层淀积到侧壁覆盖厚度为约50或更少。在另一个实施例中，上述层淀积到覆盖侧壁上厚度为约20或更少。在还有另一个实施例中，上述层淀积到侧壁覆盖厚度为约10或更少。具有厚度约为10或更少的氮化钽层在作为防止铜扩散的阻挡层应用时，被认为是一个足够的厚度。在一种情况下，可以用一种薄阻挡层来有利于充填亚微米(比如小于约0.15μm)和具有高纵横比(比如大于5-1)的更小部件。当然，可以使用具有侧壁覆盖厚度大于50的一层。
当在一个衬底上吸附一单层反应物时，上面已经说明了循环淀积的一些实施例。本发明还包括其中，反应物吸附到多于或少于一个单层上的实施例。本发明还包括其中反应物不以一种自限制方式淀积的一些实施例。本发明还包括其中淀积主要是一种化学汽相淀积法产生的一些实施例，在上述化学汽相淀积法中，反应物依次或同时输送。
当利用两种反应物的脉冲淀积一种氮化钽二元化合物时，上面已经说明了循环淀积的一些实施例。在淀积其它元素或化合物时，也可以利用两种或多种反应物的脉冲。
尽管上述内容是针对本发明的优选实施例，但在不脱离本发明基本范围的情况下，也可以产生本发明的其它和另一些实施例，并且本发明的范围由下面的权利要求确定。

Claims (20)

1.一种室，其包括：
一个衬底支承件，所述衬底支承件具有一个接收衬底的表面；
一个室盖，所述室盖包括一个逐渐扩展的通道和一个底部表面，上述逐渐扩展的通道从室盖的中央部分向下延伸，而上述底部表面从通道延伸到室盖的周边部分，底部表面加工成一定形状和尺寸，以便基本上盖住接收衬底的表面；
一个或多个阀，上述一个或多个阀与逐渐扩展的通道成流体连通；及
一个或多个气源，上述一个或多个气源与每个阀成流体连通。
2.如权利要求1所述的室，还包括一个或多个气体导管，上述气体管道流体式连接一个或多个阀及通道，并垂直于通道的纵向轴线设置。
3.如权利要求2所述的室，其中，一个或多个气体导管与通道的纵向轴线成一个角度设置。
4.如权利要求1所述的室，其中，室盖的底部表面包括一个锥形表面，该锥形表面从覆盖件的中央部分延伸，上述锥形表面包括一个从一组表面中选定的表面，上述一组表面包括一种笔直表面，一种凹形表面，一种凸形表面，或它们的组合。
5.如权利要求1所述的室，其中，通道成形为一种截锥体。
6.如权利要求1所述的室，其中，通道包括一个上面部分和一个下面部分，上面部分具有一比下面部分小的内径。
7.如权利要求1所述的室，其中，将一个共同的吹扫气源连接到每个阀上，和其中将分开的反应物气源连接到每个阀上。
8.如权利要求1所述的室，还包括一个节流口，上述节流口邻近底部表面的周边设置在室盖上。
9.如权利要求1所述的室，其中，反应区的截面积从通道到反应区的周边基本上是均匀的。
10.一种室，其包括：
一个衬底支承件，所述衬底支承件具有一个接收衬底的表面；
一个室盖，所述室盖包括一个扩展通道和包括一个锥形的底部表面，上述扩展通道从室盖的中央部分延伸，而上述锥形的底部表面从扩展通道延伸到室盖的周边部分；
一个或多个气体导管，上述气体导管围绕扩展通道的上面部分设置，其中，一个或多个气体导管与扩展通道的中心呈一个角度设置；
一个或多个阀，上述一个或多个阀连接到逐渐扩展的通道上；及
一个节流口，上述节流口邻近锥形底部表面的周长设置在室盖上。
11.如权利要求10所述的室，其中，一个或多个气体导管垂直于扩展通道的纵向轴线设置。
12.如权利要求10所述的室，其中，一个或多个气体导管与扩展通道的纵向轴线成一个角度设置。
13.如权利要求10所述的方法，其中，反应区的截面积从通道到反应区的周边基本上是均匀的。
14.如权利要求9所述的室，其中，一个或多个阀安装在室盖上。
15.如权利要求9所述的室，其中，一个或多个阀安装在室体的下方。
16.如权利要求9所述的室，还包括一个罐，上述罐适合于装一种含钽化合物，罐处于约60℃和约70℃之间的一个温度下。
17.将各种气体输送到一个衬底处理室中衬底上的方法，所述方法包括：
将一种或多种气体跃过衬底的整个中央部分范围沿一个初始圆形方向提供到衬底处理室中；
通过非绝热膨胀降低各气体的速度；
将各种气体提供给衬底的中央部分；及
以一种基本上均匀的速度使各种气体径向上从衬底的中央部分向衬底的周边部分跨过衬底。
18.如权利要求17所述的方法，其中，基本上均匀的速度包括最大速度与最小速度的比值为约2.0或更小。
19.如权利要求17所述的方法，还包括在一向下流动路线中以一个第二速度朝向衬底中央部分提供各种气体，上述第二速度小于第一速度。
20.如权利要求17所述的方法，还包括以一个第三速度从衬底的边缘朝一径向方向上提供各种气体，其中第三速度大于基本上均匀的速度。
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US8318266B2 (en) 2012-11-27
US20070003698A1 (en) 2007-01-04
CN1774525B (zh) 2010-06-16
US20030124262A1 (en) 2003-07-03
US8668776B2 (en) 2014-03-11
US20050173068A1 (en) 2005-08-11
US7780788B2 (en) 2010-08-24
KR20040058239A (ko) 2004-07-03
US20100247767A1 (en) 2010-09-30
CN101174577A (zh) 2008-05-07
US20080038463A1 (en) 2008-02-14
US20070099415A1 (en) 2007-05-03
US20030082307A1 (en) 2003-05-01
US8293328B2 (en) 2012-10-23
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US6916398B2 (en) 2005-07-12
US20030079686A1 (en) 2003-05-01

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