TWI379347B - Methods of forming carbon-containing silicon epitaxial layers - Google Patents

Methods of forming carbon-containing silicon epitaxial layers Download PDF

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Publication number
TWI379347B
TWI379347B TW96128085A TW96128085A TWI379347B TW I379347 B TWI379347 B TW I379347B TW 96128085 A TW96128085 A TW 96128085A TW 96128085 A TW96128085 A TW 96128085A TW I379347 B TWI379347 B TW I379347B
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layer
carbon
epitaxial layer
method
epitaxial
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TW96128085A
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Chinese (zh)
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TW200818274A (en
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Yihwan Kim
Zhiyuan Ye
Ali Zojaji
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Applied Materials Inc
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    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/06Silicon

Description

1379347 IX. Description of the Invention: TECHNICAL FIELD OF THE INVENTION The present invention relates to a process for semiconductor devices, and more particularly to a method of forming a carbon-containing epitaxial layer. [Prior Art]

With the production of small transistors, the fabrication of ultra-shallow source/drain junctions has become more challenging. In general, a sub-100 nm Complementary Metal-Oxide Semiconductor (CMOS) component requires a junction depth of less than 3 Onm. Epitaxial layers of germanium-containing materials, such as tantalum, niobium or tantalum carbide, are often formed in the joint by selective epitaxial deposition. In general, selective epitaxial deposition allows the epitaxial growth to be on the silicon moats rather than on the dielectric regions. Selective epitaxy can be used for semiconductor components such as source/drain, source/dip extension, contact plug or base layer deposition of bipolar components.

- In general, selective epitaxial processes involve deposition reactions and money-reactions. The deposition reaction occurs simultaneously with the engraved reaction, but has a different reaction rate for the worm layer and the polycrystalline layer. During the deposition process, the telecrystalline layer is formed on the surface of a single crystal dream layer, and the polycrystalline layer is deposited on at least the second layer 'e.g., a polycrystalline layer and/or an amorphous layer. However, the deposited polycrystalline layer typically has a faster etch rate than the epitaxial layer. Therefore, the result of the net selection process by changing the concentration of the etching gas is the deposition of the epitaxial material while limiting or not depositing the polycrystalline material. For example, the selective epitaxial process 5 1379347 will be formed on the surface of the single crystal germanium without any deposition. The epitaxial layer containing the second material is formed in the spacer and the source and source are The characteristics of the extremely extended, for example, in the formation of a Metal-Oxide-Semiconductor Field-Effect Transistor (M〇SFET) component, the selective crystal deposition technique of the germanium-containing material is quite helpful. The source/light pole extension is fabricated by first etching the dream surface to create a recessed source/drain, and then filling the etched surface with a selectively grown epitaxial layer, such as a tantalum material. Selective epitaxy can be activated by in-situ doping near-complete doping (d〇pant activati〇n), thereby omitting subsequent tempering processes. For this reason, the junction depth can be accurately defined by erbium etching and selective epitaxy. On the other hand, ultra-shallow source/bungee inevitably leads to an increase in series resistance. In addition, the junction consumption during the formation of the telluride further increases the series resistance. In order to compensate for the joint consumption, the source/pole is raised and selectively grown on the junction. In general, the increased source/drain layer is undoped 矽-0. a k _ ·. However, the existing selective epitaxial process has certain disadvantages. In order to maintain selectivity in the current 7 remote crystal process, the chemical concentration of the precursor and the reaction temperature must be controlled and adjusted throughout the deposition process. If a sufficient pre-existing drive is not provided, the money response will be dominant and the entire process will be delayed. In addition, excessive etching that is harmful to the substrate may also occur. If sufficient etching precursor is not provided, the deposition reaction will be dominant, reducing the selectivity of forming single crystal germanium and polycrystalline material on the surface of the substrate. In addition, nowadays selective Lei 6 1379347

The crystallizing process is carried out at a high reaction temperature, for example, 8 〇〇 ° C, but due to thermal budget considerations, an uncontrolled nitridation reaction is unfavorable during the fabrication process. In addition, some insect crystal films and/or processes tend to be trapped, such as pits or surface roughness in the film. Therefore, a process requiring selective and insect compounds is still to be developed. Further, at a rapid deposition rate and, for example, about 800 ° C or lower, the process needs to be compatible with each of the ruthenium-containing compounds. Finally, this process should produce low defects <such as fewer pits, faults, roughness, point defects, etc.). SUMMARY OF THE INVENTION In a first aspect of the invention, a method of layer stacking is provided. The method comprises: (1) selecting a carbon concentration of the arsenic; (2) forming the target carbon concentration of the carbon-containing ruthenium layer on the substrate; selecting a degree, a thickness, and a deposition time of the carbon-containing ruthenium layer At least one of the front layers is formed on the carbon-bearing layer. In a second aspect of the invention, a method of forming is provided. The method comprises: (1) selecting the epitaxial layer stack; and (2) stacking the carbon-containing tantalum layer and the non-carbonaceous layer by alternately depositing. Depending on the total thickness of one of the carbon-containing tantalum layers, at least one of the deposition times, the target carbon is concentrated in the second aspect of the invention to provide a use of 1000 ° C or higher. This 13⁄4 temperature response may be absent on the surface of the substrate. Crystal deposition 矽 and 矽 containing process temperature is maintained at the concentration of species to form a scoop film or film stack (eg

Forming an epitaxial layer stack on the substrate, and forming an initial epitaxial layer according to an initial carbon concentration selected and (3) etching a carbon-concentrated layer of a stack of the crystallized layer stack Carbon concentration and degree" is a method of controlling the carbon concentration in the epitaxial layer stack formed on the base 7 1379347. The method comprises: (1) determining a desired carbon concentration of the epitaxial layer stack; (2) forming the epitaxial layer stack by (a) forming a carbon-containing epitaxial layer on the substrate; b) forming a non-carbonaceous coating layer on the carbon-containing epitaxial layer. A thickness of one of the carbon-containing epitaxial layers is selected in accordance with the desired carbon concentration of the epitaxial layer stack. A variety of other aspects are also provided. Other features and aspects of the present invention will become more apparent from the embodiments described herein, the appended claims. [Embodiment] On a tantalum substrate patterned with a dielectric film, the process of selective epitaxial growth is performed only on the exposed tantalum surface (e.g., not on the dielectric surface) of the single crystal semiconductor. The process of selective worm growth can include simultaneous etching-/child process or gas alternate supply process. In the simultaneous etching/division process, both the etchant and the deposit flow simultaneously. Accordingly, deposition and etching occur simultaneously in the process of forming the epitaxial layer. Conversely, in the attached U.S. Patent Application (Application No. U/〇01'774 'Application Date December 1, 2004, Agent Case No. 9618), it is described that the gas is supplied alternately. , AGS) in the process of forming an epitaxial layer on the substrate in the process ags, the substrate is first polished, the enthalpy is formed, and then the etching process is performed on the substrate. The cycle of the etching process continues to be repeated until the desired thickness of the epitaxial layer is formed. The process of entanglement may include exposing the surface of the substrate to at least one source and

< S 8 1379347 In the deposition gas of the carrier gas. The deposition gas may also contain a source of germanium and/or carbon or a source of miscellaneous impurities. Common dopants can include arsenic, boron, phosphorus, antimony, gallium, aluminum, and other elements.

During the deposition process, when a polycrystalline layer is formed on the surface of the second layer, such as an amorphous and/or polycrystalline surface, an epitaxial layer is formed on the surface of the single crystal of the substrate. The substrate is then exposed to an etching gas. The etching gas contains a carrier gas and a money engraving agent. The etching gas removes the dream material that is deposited during the deposition process. During the etching process, the polycrystalline layer is removed faster than the insect layer. Therefore, the net result of the deposition and etching process will result in the formation of a swelled growth-containing yttrium material on the surface of the single crystal, while the polycrystalline ambiguous material on the second surface will be minimized if grown. . For the deposition of dreams, examples of materials include silic〇n gerrnanium, silicon carbon, germanium carbon's various dopants and the like.

The formation process of the conventional carbon worm crystal film is carried out by using hydrogen, vaporized hydrogen and a hydrazine source such as diki〇roSiiane at a substrate temperature higher than about 7 〇〇ec (for example, dissociating hydrogen sulfide and / or source). ―In order to reduce the epitaxial film formation temperature, gas can be used instead of hydrogen chloride (hydrogenated hydrogen) because the gas can be more effectively dissociated at a lower temperature (for example, about 600 ° C or below). Since hydrogen is incompatible with gas, a carrier gas other than hydrogen can be used for use with the gas, such as nitrogen. Similarly, a helium source having a lower dissociation temperature (e.g., silane 'SiH4), disilane (Si2H6), or the like can also be used. The use of gas as the etching gas for the ruthenium epitaxial film formation process may result in a poor surface morphology of the hard worm film. Although not wishing to be bound by any particular theory, chlorine is believed to violently attack the surface of the ruthenium film, causing potholes or the like. It has been found that the use of air gas poses a particular problem when the germanium epitaxial film contains carbon. The present invention provides a method for using chlorine gas as a gas engraving gas during the formation of a germanium epitaxial film to improve the surface morphology of the epitaxial film. For example, the present invention can be used in conjunction with the gas alternate supply process described in U.S. Patent Application Serial No. 1/774, filed on Dec. 1, 2004. In some embodiments, the carbon-containing dream crystal film is first encapsulated (encapSulate.d) before being exposed to the gas in an etched phase. For example, a rhodium-based epitaxial film formed by a carbon source (ie, without a carbon germanium epitaxial film) may be used to embed a carbon-containing germanium epitaxial film. According to an embodiment, the formation of the carbonaceous ruthenium crystal layer stack of the present invention and the AGS process employed will be described hereinafter. Please refer to Fig. 1A-1D together. Referring to Fig. aa, there is shown a cross-sectional view of a substrate 100 in which an epitaxial layer -1 0 2 (e.g., 矽, 矽 epitaxial layer) is formed on a substrate 1 〇 . In some embodiments, the seed epitaxial layer i 〇 2 can be removed. To form the epitaxial layer 102, the substrate 100 can be placed in a processing chamber and the substrate and/or process temperature can be heated. ◎Although other epitaxial film processing chambers and/or systems can be used, but in the example Crystal film processing room can be located in California

Ac Epiura® system and Poly Gen® system from Applied Materials, Inc. of Santa Clara. In at least one embodiment, less than about 700 can be employed. (: substrate and/or process temperature to improve the carbon content of the tantalum epitaxial layer formed by treatment within 10 1379347. In a particular embodiment, a substrate between about 5 50_65 (rc) may be used. And/or process temperature range, however, in another embodiment +, a substrate of less than about 6 Å < t can be used and/or process temperature β can be used with other substrates and/or process temperatures, including high Substrate and/or process temperature at 700 C. After obtaining the desired substrate and/or process temperature, the substrate 1 is exposed to at least one source (no carbon source) to form a seed epitaxial layer i 〇 2. For example, the substrate 1 〇 0 can be exposed to a lanthanum source (such as decane or dioxane) and a planting gas (such as nitrogen) P can also use a doping source, such as phosphorus or master, source Or the like (other suitable sources and/or gases are also the same). During the formation of the epitaxial film, the epitaxial layer 102 can be formed on any single crystal surface of the substrate Ύ00-. The polycrystalline layer can be formed on any of the polycrystalline layers and/or amorphous layers on the substrate 100 (as described above). For example, by flow A helium source (or dioxane having a flow rate of about 10-40 sccm) having a decane flow rate of about 50-150 sccm forms a seed epitaxial layer 1〇2, and a nitrogen-carrying gas having a flow rate of about 20-25 slm (although other larger or The flow rate of the smaller flow rate of the helium source and/or the planting gas can be increased as needed. In at least one embodiment, the thickness of the epitaxial layer 1 〇 2 of other thicknesses can be used. For example, for 2_1 〇〇Αβ, the deposition time may be about 1 second to 100 seconds, and in another _ or more embodiment +, about 5 seconds is used. After forming the seed epitaxial layer 102 (if any) If so, the substrate 100 is exposed to at least one source of germanium and a source of carbon to form a carbon-containing germanium epitaxial layer 丨〇4 over the seed layer 11 1379347 epitaxial layer 102. For example, the substrate 100 can be exposed to a source of germanium (such as decane or dioxane), a source of sulphur (such as simmer), and a carrier gas (such as nitrogen). Doping source, such as phosphorus or boron, germanium source or the like (other suitable sources and/or gases are also the same). Formation in epitaxial film During the process, a carbon-containing epitaxial layer may be formed on any single crystal surface of the substrate 100 on any of the polycrystalline layer and/or the amorphous layer on the substrate 1 (as described above). A polycrystalline layer can be formed. In at least one embodiment, a carbon source having a methane flow rate of about i_5 sccm can be used with a grate source having a flow rate of about 50-1 50 seem (or dioxane having a flow rate of about 10-40 sccm), and A nitrogen gas-flow-gas-body with a flow rate of about 20-25 slm can be used (although other larger or smaller flow rates of helium and/or carrier gas can be used). Hydrogen chloride can be supplied as needed. In the embodiment, although other thicknesses may be employed, the carbon-containing silicon layer 104 has a thickness of about 2A-100A. For example, the deposition time may be about 1 second to 50 seconds' and in another or more embodiments, about 10 seconds ...~... J - « -- - ·.- .--. — .., __u- After forming the carbon-containing epitaxial layer 1 ο 4, the substrate 10 〇 is exposed to at least one source of dreams (without a carbon source) to form the carbon-containing germanium epitaxial layer 104 on the substrate 100 A second tantalum epitaxial layer 1〇6 (such as the cover layer shown in FIG. 1C) is formed on the upper side. For example, substrate 丨00 can be exposed to a source of germanium (e.g., decane or bismuth), as well as a carrier gas (e.g., nitrogen). A dopant source such as a dish or boron, a germanium source or the like (other suitable sources and/or gases may also be used) may also be used. The second tantalum epitaxial layer < £ ) 12 1379347 106' covered on the carbon-containing germanium epitaxial layer 104 can reduce the interaction between the gas and the carbon (and/or hydrogen) in the carbon-containing germanium epitaxial layer 104. Hydrogen chloride can be introduced as required as described above. For example, the second epitaxial layer 106 can be formed by a helium source having a flow rate of about 50 to 50 seem to flow (or a dioxane having a flow rate of about 10 to 40 sccin), and a flow rate of about 20 to 25 slm. Nitrogen carrier gas (although other larger or smaller flow rates of helium and/or carrier gas may be used). Hydrogen chloride can be supplied as needed.

In at least one embodiment, the second epitaxial layer 106 can have a thickness of about 2-100A, although other thicknesses can be used. For example, the deposition time can be from about 1 second to about 1 second, and in yet another embodiment, it takes about five seconds. . . . , - Accordingly, an epitaxial layer stack 1 〇 8 may be formed, wherein the carbon-containing epitaxial layer ι 4 is coated between the non-carbon-containing epitaxial layers 102 and 106 (eg, not carbon) Originally formed insect layer).

After forming the second tantalum epitaxial layer 106, the substrate 100 is exposed to the gas mask or another etchant to etch at least the second tantalum epitaxial layer 106 and/or any other formed on the substrate 1 A film on the crucible (for example, a polycrystalline germanium formed on a polycrystalline material, and/or an amorphous layer on the substrate 100, and/or a single crystal germanium formed on the carbon-containing germanium epitaxial layer 104). For example, in at least one embodiment, substrate 100 is exposed to a gas stream having a flow rate of about 30-50 seem, and a nitrogen carrier gas having a flow rate of about 20 slm (although other larger or smaller flow rates can be used) Air and/or carrier gas). Hydrogen chloride can be supplied as needed. After etching, the process chamber used (eg, purged with nitrogen and/or another inert gas for about 20 seconds, or other suitable length of time) may be cleaned to remove gas and/or other gases from the 13 1379347 chamber. Excess material/by-product. The overlying epitaxial layer 106 and/or the epitaxial layer 102 prevents the etchant from reacting with the carbon in the carbon-containing layer 104. Accordingly, since the carbonaceous layer located below the money is not exposed to the gas, the gas can be used as the #刻刻剂. Accordingly, the carbon-containing epitaxial layer 104 may have a flat surface morphology rather than a pit surface morphology. Continuously repeat the process of deposition and etching until the desired total insect crystals are reached

The layer stack thickness is as shown in Fig. 1D. For example, the order of non-carbon-containing ruthenium deposition/carbon-containing ruthenium deposition/non-carbonaceous ruthenium deposition/etching can be repeated about 8 times so that the total epitaxial layer stack thickness reaches about 6 〇〇Λ^ In other embodiments, the step of depositing the underlying epitaxial layer may be omitted. I. The repetitive formation sequence is... deposition/non-carbon, layer deposition/money engraving to achieve the desired total epitaxial layer stacking. thickness. Although the above embodiment cites a specific method of applying the same method, in general, the epitaxial layer stack (having a carbon-containing epitaxial layer and a non-human 戸.3 rabbit stupid layer) has a thickness ranging from about 10 Α to about 2 0 0 0 A, the suppression of the value of 敕.

Tax, from 100A to about 150〇a, preferably from about 300A to about 1〇〇〇A. In the embodiment, a layer stack thickness of about 600 Å can be employed. By controlling (1) the film thickness of the carbon-containing worm layer relative to the buried material; and (2) the carbon-containing layer ^ ^ ^ ^ determining the average carbon concentration of the final worm layer stack t can be controlled and / or in the embodiment , although only in the cutting "word, in the partial product, the carbon in the carbon-containing epitaxial layer will be fast and formed in the step of carbon sinking layer, carbon layer, covering layer" deep expansion Ground. Along the stacking layer (eg species < S ) 14 1379347

The as-deposited content may be about 10 at% or less, preferably less than about 5 at%, more preferably about 0.5 at% to about 3 at%, such as 2 at%. If the cracked carbon does not all enter the lattice substitution site, the epitaxial layer may comprise at least a portion of the carbon by tempering (as described below) or by natural diffusion in a (subsequent) process step. Whether it is a crack in the stack or the carbon being replaced, the total carbon concentration in the epitaxial layer stack contains all of the carbon. High resolution X-ray diffraction (XRD) can be used to determine the concentration and thickness of carbon substitution. Secondary Ion Mass Spectroscopy (SIMS) can be used to determine the total carbon concentration (in the replaced and cracked) in the epitaxial stack. The substitution carbon concentration may be equal to or less than the total carbon concentration. Suitable tempering processes may include spike anneal, such as Rapid Thermal Process (RTP), laser annealing, or atmospheric gases (eg, oxygen, nitrogen, hydrogen, argon). , helium or any combination of the above) is subjected to thermal tempering treatment. In some embodiments t, the tempering process is carried out at a temperature of about 80 01 - 1 2 0 01 , preferably about 1 050 ° C to about 11 ° C. After deposition in the non-carbonaceous coating layer 1〇6,

This tempering process is performed after other 'process steps' (for example, after the entire film stack has been sunken). The flow chart of Figure 4 illustrates an exemplary method 400 for forming a stack of epitaxial layers having a target carbon concentration. Referring to Figure 4, in step 401, the substrate is placed in the processing chamber at a level of less than or about 8 Torr. (The temperature is heated. In some embodiments, 'a lower temperature range can be used during the formation of the epitaxial film', such as below 75 (TC, below 7 〇〇t or below 65 (TC). In 402, a carbon-containing epitaxial layer is formed on the substrate. The initial carbon concentration, thickness, and/or deposition time of the carbon-containing epitaxial layer may be selected according to the target carbon concentration of the epitaxial layer stack. In step S403, a non-carbon-containing epitaxial layer is formed on the carbon-containing layer, and in some embodiments, the non-carbon-containing layer BB layer has sufficient thickness to protect the underlying carbonaceous layer. The layer is exempt from subsequent etching. In step 404, the substrate is etched using an etchant such as hydrogen sulfide and/or gas. As described, the non-carbon-containing epitaxial layer protects the underlying carbon-containing Ba-layer. Except to be etched by the etching gas. After the etching step, a cleaning step (not shown) may also be taken to remove any etching gas and/or other excess gas in the processing chamber. In step 4〇5, Whether the unloading reaches the required thickness of the epitaxial layer stack. If it is reached, step 4〇6 is the end process. Then, the process returns to step 402 to deposit additional epitaxial material on the substrate. In another embodiment, the process cycle may include (1) a non-carbon-containing germanium (Si) layer deposition step; (2) Carbon germanium (Si: C) layer deposition step; (3) non-carbonaceous (si) layer deposition step; (4) etching step; and (5) cleaning step. Several process cycles can be repeated to achieve total insect crystal Layer stack. Stack thickness. In a specific embodiment, repeating about 80 process cycles 'a stack of insect crystal layers with an epitaxial material of about 6 〇〇a can be obtained." In this embodiment, each time si or Si : deposition of c can produce about 5-30 A of epitaxial material 'and part of it is etched by subsequent etching steps (eg, about 15-25 A). After about 80 repetitions, the remaining cryptic material (eg On the trenches, it is about 600 A (while there is little or no deposition on the dielectric region of the substrate). In another embodiment, an epitaxial layer stack thickness range of about 3 Å·丨〇〇 nanometer can be used. 1379347 In some embodiments, the epitaxial layer stack and/or the deposited carbon concentration in the deposited as-deposited Si: C layer The circumference is about 5.5-2.0 at%. When the Si:C layer is sandwiched between the 矽(Si) layers, the overall stack carbon concentration is reduced as the thickness of the Si layer is lower than the thickness of the Si:C layer. The carbon concentration may be equal to or less than the total carbon concentration.

The example gas flow rate range includes the flow rate of about 5-500 seem's for the source of the two gas dreams, the dream pit's two dreams, or other high order silanes. For the source of ^mono Methylsilane, the flow rate is about 1-30 sccm. For hydrogen or nitrogen carrier gas, the flow rate is about 3-30 slm. In the etching process, the example gasification hydrogen flow rate is about 20-1 〇〇〇 seem, and the gas k-speed island is 1 0-500 seem.

In a particular embodiment, 'in each etch process step (except for the cleaning step kick), the cesium chloride can be flowed at about the same flow rate (eg, at a flow rate of about 300 sccm or another suitable flow rate). Chlorine gas is only introduced during the tracing step (eg, at a flow rate of about 30 seem or another suitable flow rate). The inflow of dioxane can be carried out in each deposition step (for example at a flow rate of about 7 seem or another suitable flow rate), methyl methane can be flowed in the Si:C deposition step (for example at a flow rate of about 2.2 seem or another A suitable flow rate). In each process cycle, the nitrogen carrier gas can be flowed at a flow rate of about 20 slm or another suitable flow rate and increased to a flow rate of about 30 s or another in each cleaning step. In some embodiments, 'in the first tantalum deposition step (eg, deposition for about 4 seconds), about 5 A is deposited in the S i ·· C矽 deposition step (eg, deposition for about 7 seconds), deposition about 9A S丨: C 'in the second deposition step (eg, deposition for about 10 seconds), depositing about 13 A of yttrium, while in the etching step (eg 18 1379347

Etching for about 13 seconds), removing the epitaxial material of about 9A for a clean time (eg, about 1 second). After deposition and cleaning over 6 〇〇t and the chamber pressure is about 10 τ 〇ΓΓ, while the etch is 13 Τ〇ΓΓ. Other process strips may also be employed as described, although the present invention has been disclosed in the above embodiments. The present invention has been disclosed in the exemplary embodiments without departing from the spirit and scope of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS The first A - 1D diagram shows a cross-sectional view of a substrate during a solid layer stacking process in accordance with the present invention. 2 is a graph showing a crystal layer, a carbon-containing crystal layer, and a non-carbon-containing epitaxial layer according to an embodiment of the present invention. FIG. 3 is a diagram showing a layer and an overlay layer according to the present invention. The deposition time of the crystal layer is fixed, the deposition time of the layer, and the obtained substituted carbon, SC) curve. Figure 4 is a flow chart showing a method of stacking epitaxial layers of carbon concentration in accordance with one embodiment of the present invention. . A suitable cleaning process can be used, during the process temperature comparison process, the grinding force is about. However, it is not intended to limit the spirit and scope of the invention. Therefore, in other embodiments, it is also included in the definition of the scope of the application, in the formation of the Lei, along the non-carbonaceous stack layer, the carbon concentration, a kind of epitaxy according to different carbon-containing epitaxial I degree (substitut ί 〇a η 1 formed with the mark 19 1379347

[Main component symbol description] 100 substrate 400 method 102 kinds of epitaxial layer 401 step 104 carbon germanium epitaxial layer 402 step 106 second germanium epitaxial layer 403 step 108 epitaxial layer stack 404 step 200 illustration 405 step 202 line 406 Step 300 Illustration 302 Line

20

Claims (1)

1379347 l·7 / year i 2: 2 The first %αν« patent _ leap year? Monthly Amendment 10. Patent Application Range: 1. A method for forming a stack of epitaxial layers on a substrate, the epitaxial layer stack comprising a desired thickness and a target carbon concentration, the method comprising: (a) Forming a first ruthenium layer on the substrate, the first ruthenium layer comprising carbon-containing ruthenium; (b) forming a second shoal layer on the first shard layer, the second layer comprising non-carbonaceous;
(c) distributing carbon from the first layer to the second layer; (d) etching the epitaxial layer stack to remove a portion of the second layer; (e) repeating step (a) Up to (d) until the etched epitaxial layer stack has the desired thickness; and (f) controlling one or more of: (i) an initial carbon concentration of the first ruthenium layer (ii) The thickness and (iii) a deposition time to achieve the target carbon concentration of the etched epitaxial layer stack.
2. The method of claim 1, wherein the target carbon concentration is between about 200 p p m and 5 a t %. 3. The method of claim 1, wherein the initial carbon concentration is between about 0.5 at% and 10 at%. 4. The method of claim 1, further comprising forming a non-carbon-containing epitaxial layer between the first layer and the substrate. 21 1.379347 - 卜(年>;] 十'二/$ 5. The method of claim 1, wherein the required thickness is between about 10 and 2000 A. 6. The method of item 1, wherein the initial carbon concentration is greater than or equal to the target carbon concentration.
7. The method of claim 1, wherein the step of etching the epitaxial layer stack comprises etching the epitaxial layer stack with an etching gas containing an atmosphere. 8. The method of claim 1, wherein each second layer has a thickness to avoid a reaction between the etching gas and the first layer. 9. The method of claim 1, wherein forming at least one of the first layer and the second layer is performed at a temperature of less than or about 700 °C. 10. A method for controlling a concentration of carbon in a stack of epitaxial layers formed on a substrate, the method comprising: determining a concentration of carbon required for one of the epitaxial layer stacks; and forming the epitaxial layer Stacking, by: 22 1379347 (a) forming a first epitaxial layer on the substrate, the first epitaxial layer containing carbon; (b) forming a non-carbon containing layer on the first epitaxial layer (c) distributing carbon from the first crystal layer to the cover layer; (d) etching to remove a portion of the cover layer; (e) repeating steps (a) through (d) until Etching the epitaxial layer stack to have a desired thickness;
(f) controlling one or more of: (i) an initial carbon concentration, (ii) a thickness, and (iii) a deposition time of the first layer to achieve an etched target of the layer of the insect layer Broken concentration. 11. The method of claim 10, further comprising forming an epitaxial layer between the first epitaxial layer and the substrate.
1 2. The method of claim 10, wherein the target carbon concentration is between about 200 ppm and 5 at%. 13. The method of claim 10, wherein the first epitaxial layer has a thickness of between about 2A and 100A. 14. The method of claim 10, wherein the etching step comprises etching the epitaxial layer stack with a gas gas. 23 1379347
The method of claim 10, further comprising forming an additional alternating first epitaxial layer and a cap layer of the epitaxial layer stack.
twenty four
TW96128085A 2006-07-31 2007-07-31 Methods of forming carbon-containing silicon epitaxial layers TWI379347B (en)

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