JP5371917B2 - 原子層堆積のためのガス配送装置 - Google Patents
原子層堆積のためのガス配送装置 Download PDFInfo
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- JP5371917B2 JP5371917B2 JP2010205796A JP2010205796A JP5371917B2 JP 5371917 B2 JP5371917 B2 JP 5371917B2 JP 2010205796 A JP2010205796 A JP 2010205796A JP 2010205796 A JP2010205796 A JP 2010205796A JP 5371917 B2 JP5371917 B2 JP 5371917B2
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- Prior art keywords
- gas
- chamber
- channel
- substrate
- valve
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4411—Cooling of the reaction chamber walls
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
- C23C16/45504—Laminar flow
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C23C16/45508—Radial flow
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45512—Premixing before introduction in the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45582—Expansion of gas before it reaches the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
- H01L21/28562—Selective deposition
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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Description
[0002]本発明の実施形態は、一般に、原子層堆積のための装置及び方法に関する。より詳細には、本発明の実施形態は、原子層堆積のための改良されたガス配送装置及び方法に関する。
[0003]サブミクロン以下の特徴部を高い信頼性で製造することは、半導体デバイスの次世代の超大規模集積(VLSI)及び極超大規模集積(ULSI)のための重要な技術の1つである。しかしながら、回路技術のフリンジがプレスされるときには、VLSI及びULSI技術における相互接続部の寸法収縮により処理能力に付加的な要求が課せられる。この技術の中心に位置する多レベルの相互接続部は、ビア及び他の相互接続部のようなアスペクト比の高い特徴部の高精度処理を必要とする。これらの相互接続部を高い信頼性で製造することは、VLSI及びULSIの成功にとって非常に重要であると共に、個々の基板の回路密度及び品質を高める努力を続けるためにも非常に重要である。
「Q」は、ガスの流量である。「A」は、流れ区分の面積である。「V」は、ガスの速度である。ガスの速度は、流れ区分の面積(Hx2πR)に逆比例し、ここで、「H」は、流れ区分の高さであり、「2πR」は、流れ区分の周囲長である。換言すれば、ガスの速度は、流れ区分の高さ「H」及び流れ区分の半径「R」に逆比例する。
Claims (15)
- チャンバ本体と、基板支持体と、チャンバ蓋とを備えたチャンバであって、
上記基板支持体は、上記チャンバ本体内に配置され、基板受け入れ面を有し、
上記チャンバ蓋は、上記チャンバ本体上に配置され、チャンネルと、少なくとも2つのガス入口と、少なくとも2つのガスコンジットとを有し、
上記チャンネルは、上記チャンバ蓋の中央部分から下方に延び、長手軸、上部、下部、底面を有し、上記底面は、上記チャンネルの下部から上記チャンバ蓋の周囲部分へ延び、上記基板受け入れ面を実質的に覆う形状及びサイズにされており、
上記少なくとも2つのガス入口は、上記チャンネルの上部に配置されており、
上記少なくとも2つのガスコンジットは、上記少なくとも2つのガス入口と結合されており、
上記チャンネルの下部の直径は、上記チャンネルの上部の直径より大きくなっており、
上記ガスコンジットの各々は、上記チャンネルの長手軸と交差しない中心線を有し、上記チャンネル内で螺旋状のガス流を形成する、
チャンバ。 - 上記ガスコンジットと流体連通した1つ以上のバルブを更に備えた、請求項1に記載のチャンバ。
- 上記バルブの各々と流体連通した1つ以上のガス源を更に備える、請求項2に記載のチャンバ。
- 上記底面は、上記チャンバ蓋の中央部分から延びるテーパー付けされた面で構成され、上記テーパー付けされた面は、まっすぐな面、凹状面、凸状面又はその組合せより成るグループから選択された面で構成される、請求項1に記載のチャンバ。
- 上記チャンネルは、裁頭円錐の形状とされる、請求項1に記載のチャンバ。
- 上記ガスコンジットは、上記チャンネルに対して直角である、請求項1に記載のチャンバ。
- 共通のパージガス源が各バルブに結合されると共に、個別の反応ガス源が各バルブに結合される、請求項2に記載のチャンバ。
- 上記底面の周囲付近で上記チャンバ蓋に配置されたチョークを更に備えた、請求項1に記載のチャンバ。
- 上記基板支持体にパージ通路が配置された、請求項1に記載のチャンバ。
- チャンバ本体と、基板支持体と、チャンバ蓋とを備えたチャンバであって、
上記基板支持体は、上記チャンバ本体内に配置され、基板受け入れ面を有し、
上記チャンバ蓋は、上記チャンバ本体上に配置され、拡大チャンネル、少なくとも2つのガスコンジット、1つ以上のバルブを有し、
上記拡大チャンネルは、上記チャンバ蓋の中央部分から延び、長手軸、テーパー付けされた底面、少なくとも2つのガス入口を有し、上記テーパ付けされた底面は、上記拡大チャンネルから上記チャンバ蓋の周囲部分へ延び、上記少なくとも2つのガス入口は、上記拡大チャンネルの上部に配置され、
上記少なくとも2つのガスコンジットは、それぞれのガス入口に結合され、上記ガスコンジットの各々は、上記チャンネルの長手軸と交差しない中心線を有し、上記チャンネル内で螺旋状のガス流を形成し、
上記1つ以上のバルブは、上記ガスコンジットに結合されている、
チャンバ。 - 上記テーパー付けされた底面の周囲付近の上記チャンバ蓋上に配置されたチョークを更に備える、請求項10に記載のチャンバ。
- 上記拡大チャンネルは、裁頭円錐の形状とされる、請求項10に記載のチャンバ。
- パージチャンネルは、上記基板支持体に配置される、請求項10に記載のチャンバ。
- 上記1つ以上のバルブは、上記チャンバ蓋に取り付けられる、請求項10に記載のチャンバ。
- 上記1つ以上のバルブは、上記チャンバ本体の下に取り付けられる、請求項10に記載のチャンバ。
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US10/032,284 US6916398B2 (en) | 2001-10-26 | 2001-12-21 | Gas delivery apparatus and method for atomic layer deposition |
US10/032,284 | 2001-12-21 | ||
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US5000113A (en) * | 1986-12-19 | 1991-03-19 | Applied Materials, Inc. | Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process |
JPH0487323A (ja) * | 1990-07-31 | 1992-03-19 | Mitsubishi Electric Corp | Cvd装置 |
US5951771A (en) * | 1996-09-30 | 1999-09-14 | Celestech, Inc. | Plasma jet system |
US6026762A (en) * | 1997-04-23 | 2000-02-22 | Applied Materials, Inc. | Apparatus for improved remote microwave plasma source for use with substrate processing systems |
FI118342B (fi) * | 1999-05-10 | 2007-10-15 | Asm Int | Laite ohutkalvojen valmistamiseksi |
US20020127336A1 (en) * | 2001-01-16 | 2002-09-12 | Applied Materials, Inc. | Method for growing thin films by catalytic enhancement |
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JP4615859B2 (ja) | 2011-01-19 |
WO2003035927A3 (en) | 2003-07-31 |
TW563176B (en) | 2003-11-21 |
JP2005507030A (ja) | 2005-03-10 |
EP1444380B1 (en) | 2005-03-23 |
DE60203413D1 (de) | 2005-04-28 |
WO2003035927A2 (en) | 2003-05-01 |
DE20221269U1 (de) | 2005-12-08 |
EP1444380A2 (en) | 2004-08-11 |
DE60203413T2 (de) | 2006-04-20 |
JP2011042876A (ja) | 2011-03-03 |
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