JP6227282B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP6227282B2 JP6227282B2 JP2013114033A JP2013114033A JP6227282B2 JP 6227282 B2 JP6227282 B2 JP 6227282B2 JP 2013114033 A JP2013114033 A JP 2013114033A JP 2013114033 A JP2013114033 A JP 2013114033A JP 6227282 B2 JP6227282 B2 JP 6227282B2
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- Prior art keywords
- layer
- oxide semiconductor
- film
- electrode layer
- oxide
- Prior art date
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
- H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
- H10D30/6739—Conductor-insulator-semiconductor electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
- H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
- H10D64/512—Disposition of the gate electrodes, e.g. buried gates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
- H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
- H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
- H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
- H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
- H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Thin Film Transistor (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Electroluminescent Light Sources (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electrodes Of Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013114033A JP6227282B2 (ja) | 2012-05-31 | 2013-05-30 | 半導体装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012125432 | 2012-05-31 | ||
| JP2012125432 | 2012-05-31 | ||
| JP2013114033A JP6227282B2 (ja) | 2012-05-31 | 2013-05-30 | 半導体装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017197320A Division JP6460610B2 (ja) | 2012-05-31 | 2017-10-11 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014007399A JP2014007399A (ja) | 2014-01-16 |
| JP2014007399A5 JP2014007399A5 (enExample) | 2016-06-30 |
| JP6227282B2 true JP6227282B2 (ja) | 2017-11-08 |
Family
ID=49669122
Family Applications (8)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013114033A Active JP6227282B2 (ja) | 2012-05-31 | 2013-05-30 | 半導体装置 |
| JP2017197320A Active JP6460610B2 (ja) | 2012-05-31 | 2017-10-11 | 半導体装置 |
| JP2018240440A Withdrawn JP2019062233A (ja) | 2012-05-31 | 2018-12-24 | 半導体装置の作製方法 |
| JP2019008223A Active JP6694976B2 (ja) | 2012-05-31 | 2019-01-22 | トランジスタ |
| JP2020074488A Active JP6907377B2 (ja) | 2012-05-31 | 2020-04-20 | 半導体装置 |
| JP2021108364A Active JP7135168B2 (ja) | 2012-05-31 | 2021-06-30 | 半導体装置 |
| JP2022137603A Active JP7362861B2 (ja) | 2012-05-31 | 2022-08-31 | 半導体装置 |
| JP2023172797A Active JP7521092B2 (ja) | 2012-05-31 | 2023-10-04 | 表示装置 |
Family Applications After (7)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017197320A Active JP6460610B2 (ja) | 2012-05-31 | 2017-10-11 | 半導体装置 |
| JP2018240440A Withdrawn JP2019062233A (ja) | 2012-05-31 | 2018-12-24 | 半導体装置の作製方法 |
| JP2019008223A Active JP6694976B2 (ja) | 2012-05-31 | 2019-01-22 | トランジスタ |
| JP2020074488A Active JP6907377B2 (ja) | 2012-05-31 | 2020-04-20 | 半導体装置 |
| JP2021108364A Active JP7135168B2 (ja) | 2012-05-31 | 2021-06-30 | 半導体装置 |
| JP2022137603A Active JP7362861B2 (ja) | 2012-05-31 | 2022-08-31 | 半導体装置 |
| JP2023172797A Active JP7521092B2 (ja) | 2012-05-31 | 2023-10-04 | 表示装置 |
Country Status (6)
| Country | Link |
|---|---|
| US (3) | US9496408B2 (enExample) |
| JP (8) | JP6227282B2 (enExample) |
| KR (3) | KR102316107B1 (enExample) |
| CN (2) | CN104380473B (enExample) |
| TW (7) | TWI691083B (enExample) |
| WO (1) | WO2013180040A1 (enExample) |
Families Citing this family (316)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102119914B1 (ko) | 2012-05-31 | 2020-06-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| KR102113160B1 (ko) * | 2012-06-15 | 2020-05-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| US8901557B2 (en) | 2012-06-15 | 2014-12-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR102161077B1 (ko) | 2012-06-29 | 2020-09-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| US9190525B2 (en) | 2012-07-06 | 2015-11-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including oxide semiconductor layer |
| JP6134598B2 (ja) | 2012-08-02 | 2017-05-24 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| EP2880690B1 (en) | 2012-08-03 | 2019-02-27 | Semiconductor Energy Laboratory Co. Ltd. | Semiconductor device with oxide semiconductor stacked film |
| KR102171650B1 (ko) | 2012-08-10 | 2020-10-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| WO2014024808A1 (en) | 2012-08-10 | 2014-02-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US9245958B2 (en) | 2012-08-10 | 2016-01-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| US9929276B2 (en) | 2012-08-10 | 2018-03-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| JP6220597B2 (ja) | 2012-08-10 | 2017-10-25 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| KR20150043307A (ko) | 2012-08-10 | 2015-04-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제조 방법 |
| TWI595659B (zh) | 2012-09-14 | 2017-08-11 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| TWI671910B (zh) | 2012-09-24 | 2019-09-11 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
| WO2014046222A1 (en) | 2012-09-24 | 2014-03-27 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| KR102094568B1 (ko) | 2012-10-17 | 2020-03-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그의 제작 방법 |
| KR102227591B1 (ko) | 2012-10-17 | 2021-03-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| KR102220279B1 (ko) | 2012-10-19 | 2021-02-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 산화물 반도체막을 포함하는 다층막 및 반도체 장치의 제작 방법 |
| JP6300489B2 (ja) | 2012-10-24 | 2018-03-28 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| TWI608616B (zh) | 2012-11-15 | 2017-12-11 | 半導體能源研究所股份有限公司 | 半導體裝置 |
| TWI582993B (zh) | 2012-11-30 | 2017-05-11 | 半導體能源研究所股份有限公司 | 半導體裝置 |
| KR102207028B1 (ko) | 2012-12-03 | 2021-01-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| DE112013006219T5 (de) | 2012-12-25 | 2015-09-24 | Semiconductor Energy Laboratory Co., Ltd. | Halbleitervorrichtung und deren Herstellungsverfahren |
| US9391096B2 (en) | 2013-01-18 | 2016-07-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| TWI618252B (zh) | 2013-02-12 | 2018-03-11 | 半導體能源研究所股份有限公司 | 半導體裝置 |
| US9190527B2 (en) | 2013-02-13 | 2015-11-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of semiconductor device |
| US9231111B2 (en) | 2013-02-13 | 2016-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR102238682B1 (ko) | 2013-02-28 | 2021-04-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치와 그 제작 방법 |
| KR102153110B1 (ko) | 2013-03-06 | 2020-09-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체막 및 반도체 장치 |
| TWI620324B (zh) | 2013-04-12 | 2018-04-01 | 半導體能源研究所股份有限公司 | 半導體裝置 |
| US10304859B2 (en) | 2013-04-12 | 2019-05-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having an oxide film on an oxide semiconductor film |
| KR102222344B1 (ko) | 2013-05-02 | 2021-03-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| CN105190902B (zh) | 2013-05-09 | 2019-01-29 | 株式会社半导体能源研究所 | 半导体装置及其制造方法 |
| DE102014019794B4 (de) | 2013-05-20 | 2024-10-24 | Semiconductor Energy Laboratory Co., Ltd. | Halbleitervorrichtung |
| TWI641112B (zh) | 2013-06-13 | 2018-11-11 | 半導體能源研究所股份有限公司 | 半導體裝置 |
| US20150008428A1 (en) | 2013-07-08 | 2015-01-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| JP6018607B2 (ja) | 2013-07-12 | 2016-11-02 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2015053477A (ja) | 2013-08-05 | 2015-03-19 | 株式会社半導体エネルギー研究所 | 半導体装置および半導体装置の作製方法 |
| TWI646690B (zh) | 2013-09-13 | 2019-01-01 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| US9425217B2 (en) * | 2013-09-23 | 2016-08-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| DE102014220672A1 (de) | 2013-10-22 | 2015-05-07 | Semiconductor Energy Laboratory Co., Ltd. | Halbleitervorrichtung |
| CN110265482B (zh) * | 2013-12-02 | 2023-08-08 | 株式会社半导体能源研究所 | 显示装置 |
| US9627413B2 (en) | 2013-12-12 | 2017-04-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device |
| TWI666770B (zh) | 2013-12-19 | 2019-07-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
| WO2015097596A1 (en) * | 2013-12-26 | 2015-07-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP6629509B2 (ja) * | 2014-02-21 | 2020-01-15 | 株式会社半導体エネルギー研究所 | 酸化物半導体膜 |
| TWI663726B (zh) | 2014-05-30 | 2019-06-21 | Semiconductor Energy Laboratory Co., Ltd. | 半導體裝置、模組及電子裝置 |
| US9971193B2 (en) | 2014-09-05 | 2018-05-15 | Sharp Kabushiki Kaisha | Liquid crystal display panel |
| US9991393B2 (en) * | 2014-10-16 | 2018-06-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, module, and electronic device |
| CN107004603B (zh) | 2014-11-28 | 2021-03-09 | 夏普株式会社 | 半导体装置及其制造方法 |
| US10134910B2 (en) | 2014-11-28 | 2018-11-20 | Sharp Kabushiki Kaisha | Semiconductor device and production method therefor |
| WO2016084687A1 (ja) | 2014-11-28 | 2016-06-02 | シャープ株式会社 | 半導体装置およびその製造方法 |
| US20170323907A1 (en) | 2014-11-28 | 2017-11-09 | Sharp Kabushiki Kaisha | Semiconductor device and method for manufacturing same |
| WO2016104253A1 (ja) | 2014-12-25 | 2016-06-30 | シャープ株式会社 | 半導体装置 |
| WO2016104216A1 (ja) * | 2014-12-26 | 2016-06-30 | シャープ株式会社 | 半導体装置、表示装置および半導体装置の製造方法 |
| US10396210B2 (en) * | 2014-12-26 | 2019-08-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with stacked metal oxide and oxide semiconductor layers and display device including the semiconductor device |
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