JP6227287B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6227287B2 JP6227287B2 JP2013123308A JP2013123308A JP6227287B2 JP 6227287 B2 JP6227287 B2 JP 6227287B2 JP 2013123308 A JP2013123308 A JP 2013123308A JP 2013123308 A JP2013123308 A JP 2013123308A JP 6227287 B2 JP6227287 B2 JP 6227287B2
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- oxide semiconductor
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- semiconductor layer
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Description
本実施の形態では、半導体装置及び半導体装置の作製方法の一形態を、図2及び図3を用いて説明する。本実施の形態では、半導体装置の一例として、酸化物半導体層を有するボトムゲート型のトランジスタを示す。
本実施の形態では、実施の形態1と異なる半導体装置の一形態を、図12を用いて説明する。
本実施の形態では、酸化物半導体層として適用可能なCAAC−OS膜について説明する。より具体的には、CAAC−OS膜を成膜中の現象について図13乃至図15を用いて詳細に説明する。
実施の形態1又は2に示したトランジスタを用いて表示機能を有する半導体装置(表示装置ともいう)を作製することができる。また、トランジスタを含む駆動回路の一部又は全体を、画素部と同じ基板上に一体形成し、システムオンパネルを形成することができる。
実施の形態1又は2に示したトランジスタを用いて、対象物の情報を読み取るイメージセンサ機能を有する半導体装置を作製することができる。
本明細書に開示する半導体装置は、さまざまな電子機器(遊技機も含む)に適用することができる。電子機器としては、テレビジョン装置(テレビ、又はテレビジョン受信機ともいう)、コンピュータ用などのモニタ、デジタルカメラ、デジタルビデオカメラ、デジタルフォトフレーム、携帯電話機、携帯型ゲーム機、携帯情報端末、音響再生装置、遊技機(パチンコ機、スロットマシン等)、ゲーム筐体が挙げられる。これらの電子機器の具体例を図8に示す。
320 トランジスタ
330 トランジスタ
400 基板
402 ゲート電極層
403 第1のゲート絶縁層
403a ゲート絶縁層
403b ゲート絶縁層
403c ゲート絶縁層
404 ゲート絶縁層
404a ゲート絶縁層
404b ゲート絶縁層
406 第2のゲート絶縁層
407a 酸化物半導体膜
407b 酸化物半導体膜
407c 酸化物半導体膜
408 酸化物半導体積層
408a 第1の酸化物半導体層
408b 第2の酸化物半導体層
408c 第3の酸化物半導体層
409 酸化物半導体積層
409c 第3の酸化物半導体層
410a ソース電極層
410b ドレイン電極層
412 絶縁層
412a 絶縁層
412b 絶縁層
491 共通電位線
492 共通電極
500 基板
501 ゲート絶縁層
502 ゲート絶縁層
504 層間絶縁層
505 カラーフィルタ層
506 絶縁層
507 隔壁
510 トランジスタ
511a ゲート電極層
511b ゲート電極層
512 酸化物半導体積層
512a 第1の酸化物半導体層
512b 第2の酸化物半導体層
512c 第3の酸化物半導体層
513a 導電層
513b 導電層
520 容量素子
521a 導電層
521b 導電層
522 酸化物半導体積層
522a 第1の酸化物半導体層
522b 第2の酸化物半導体層
522c 第3の酸化物半導体層
523 導電層
525 絶縁層
530 配線層交差部
533 導電層
540 発光素子
541 電極層
542 電界発光層
543 電極層
601 基板
602 フォトダイオード
606a 半導体膜
606b 半導体膜
606c 半導体膜
608 接着層
613 基板
632 絶縁層
633 層間絶縁層
634 層間絶縁層
640 トランジスタ
641a 電極層
641b 電極層
642 電極層
643 導電層
645 導電層
656 トランジスタ
658 フォトダイオードリセット信号線
659 ゲート信号線
671 フォトセンサ出力信号線
672 フォトセンサ基準信号線
2000 基板
2001 スパッタリング粒子
2002 スパッタリングターゲット
2003 チャンバー
4001 基板
4002 画素部
4003 信号線駆動回路
4004 走査線駆動回路
4005 シール材
4006 基板
4008 液晶層
4010 トランジスタ
4011 トランジスタ
4013 液晶素子
4015 接続端子電極
4016 端子電極
4018 FPC
4019 異方性導電層
4020 ゲート絶縁層
4031 電極層
4032 絶縁層
4033 絶縁層
4034 電極層
4035 スペーサ
4038 絶縁層
4040 平坦化絶縁層
4042 絶縁層
9000 テーブル
9001 筐体
9002 脚部
9003 表示部
9004 表示ボタン
9005 電源コード
9033 留め具
9034 スイッチ
9035 電源スイッチ
9036 スイッチ
9038 操作スイッチ
9100 テレビジョン装置
9101 筐体
9103 表示部
9105 スタンド
9107 表示部
9109 操作キー
9110 リモコン操作機
9201 本体
9202 筐体
9203 表示部
9204 キーボード
9205 外部接続ポート
9206 ポインティングデバイス
9630 筐体
9631 表示部
9631a 表示部
9631b 表示部
9632a 領域
9632b 領域
9633 太陽電池
9634 充放電制御回路
9635 バッテリー
9636 DCDCコンバータ
9637 コンバータ
9638 操作キー
9639 ボタン
Claims (5)
- 第1の酸化物絶縁層と、
前記第1の酸化物絶縁層上の酸化物半導体積層と、
前記酸化物半導体積層上の第2の酸化物絶縁層と、
前記酸化物半導体積層と重なる領域を有するゲート電極層と、
前記酸化物半導体積層と電気的に接続されたソース電極層及びドレイン電極層とを有し、
前記酸化物半導体積層は、第1の酸化物半導体層と、前記第1の酸化物半導体層上に接する第2の酸化物半導体層と、前記第2の酸化物半導体層上に接する第3の酸化物半導体層とを有し、
前記第2の酸化物半導体層のフェルミ準位と伝導帯下端との差は、前記第1の酸化物半導体層のフェルミ準位と伝導帯下端との差よりも小さく、
前記第2の酸化物半導体層のフェルミ準位と伝導帯下端との差は、前記第3の酸化物半導体層のフェルミ準位と伝導帯下端との差よりも小さく、
前記第3の酸化物半導体層は、前記第1の酸化物半導体層の側面と接する領域と、前記第2の酸化物半導体層の側面と接する領域とを有することを特徴とする半導体装置。 - 第1の窒化物絶縁層と、
前記第1の窒化物絶縁層上の第1の酸化物絶縁層と、
前記第1の酸化物絶縁層上の酸化物半導体積層と、
前記酸化物半導体積層上の第2の酸化物絶縁層と、
前記第2の酸化物絶縁層上の第2の窒化物絶縁層と、
前記酸化物半導体積層と重なる領域を有するゲート電極層と、
前記酸化物半導体積層と電気的に接続されたソース電極層及びドレイン電極層とを有し、
前記酸化物半導体積層は、第1の酸化物半導体層と、前記第1の酸化物半導体層上に接する第2の酸化物半導体層と、前記第2の酸化物半導体層上に接する第3の酸化物半導体層とを有し、
前記第2の酸化物半導体層のフェルミ準位と伝導帯下端との差は、前記第1の酸化物半導体層のフェルミ準位と伝導帯下端との差よりも小さく、
前記第2の酸化物半導体層のフェルミ準位と伝導帯下端との差は、前記第3の酸化物半導体層のフェルミ準位と伝導帯下端との差よりも小さく、
前記第3の酸化物半導体層は、前記第1の酸化物半導体層の側面と接する領域と、前記第2の酸化物半導体層の側面と接する領域とを有することを特徴とする半導体装置。 - 請求項1又は2において、
前記第2の酸化物半導体層は、n型の導電性を付与する不純物を有することを特徴とする半導体装置。 - 請求項1乃至3のいずれか一において、
前記第1の酸化物半導体層及び前記第3の酸化物半導体層は、i型の酸化物半導体層であることを特徴とする半導体装置。 - 請求項1乃至4のいずれか一において、
前記第3の酸化物半導体層は、インジウムを有することを特徴とする半導体装置。
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US20130334523A1 (en) | 2013-12-19 |
JP2014017477A (ja) | 2014-01-30 |
US8901557B2 (en) | 2014-12-02 |
US10483406B2 (en) | 2019-11-19 |
US9490369B2 (en) | 2016-11-08 |
US20150187949A1 (en) | 2015-07-02 |
US20170054031A1 (en) | 2017-02-23 |
KR20130141379A (ko) | 2013-12-26 |
KR102105519B1 (ko) | 2020-04-29 |
US20180108785A1 (en) | 2018-04-19 |
US9847430B2 (en) | 2017-12-19 |
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