JP2016501809A - 平坦なSiC半導体基板 - Google Patents
平坦なSiC半導体基板 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims description 57
- 239000004065 semiconductor Substances 0.000 title description 16
- 238000000151 deposition Methods 0.000 claims abstract description 8
- 235000012431 wafers Nutrition 0.000 claims description 151
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 77
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 72
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- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 26
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
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- 238000007792 addition Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
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- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
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- 238000001459 lithography Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
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- B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
- B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
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- B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
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- C30—CRYSTAL GROWTH
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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Abstract
Description
本出願は、共に標題が「FLAT SiC SEMICONDUCTOR SUBSTRATE」である、2012年10月26日に出願された米国特許仮出願第61/719,310号、2013年8月6日に出願された米国特許出願第13/959,896号の利益及び優先権を主張するものであり、これらの開示内容の全体を参照により本明細書に援用する。
本開示は、半導体ウェハの製造に関し、より具体的には、炭化ケイ素で作られる半導体ウェハに関する。
特に言及しない限り、又は文脈から暗示されない限り、次の用語及び表現は、以下に提供する意味を含む。特に明白に言及しない限り、又は文脈から明らかでない限り、以下の用語及び表現は、用語又は表現に対して、それが関係する技術分野で獲得された意味を除外しない。本発明の範囲は特許請求の範囲によってのみ限定されるため、これらの定義は、本明細書に記載される態様の特定の実施形態の説明を補助するために提供され、特許請求の範囲に記載された本発明を限定する意図はない。更に、文脈により別段に必要とされない限り、単数形の用語は複数形を含み、複数形の用語は単数形を含むものとする。
上述の、図1に示すプロセスフローを、製造された、直径が75mm及び100mmの4H−SiCウェハに対して使用した。ウェハは0.015〜0.028Ω・cmの抵抗率の範囲を呈した。工程100−105−110では、SiCインゴットを直円柱体に機械加工した。円筒形インゴットをプラスチックのビーム上に取り付け、マルチワイヤーソーの中に置いた。インゴットを、ワイヤーとインゴットの周縁に向けられたダイヤモンドスラリーのフローを用いて切断した。ビームをソーから取り除き、溶液の中に置き、ビームからスライスを分離した。スライスを洗浄し、カセット内に置いた。ウェハを自動縁部研削システムに搬送し、そこで、ダイヤモンド砥石を用いて台形縁部プロファイルを形成した。このプロセスはSEMI規格M55のガイドラインに従う。
Claims (22)
- 裏面とエピタキシャル堆積の状態にされた表面とを有する研磨された炭化ケイ素ウェハを含み、前記研磨された炭化ケイ素ウェハが、1平方cmのサイトサイズを基準にして、0.1〜1.5μmのLTV(Local Thickness Variation)及び0.01〜0.3μmのSFQR(Site Front side least sQuares focal plane Range)を有する、基板。
- 前記表面がRq<15オングストロームのrms粗さを有する、請求項1に記載の基板。
- 前記基板が0.1〜5μmの範囲内のTTV(Total Thickness variation)を有する、請求項1又は2に記載の基板。
- 前記基板が0.1〜35μmの歪みを更に有する、請求項1〜3のいずれか一項に記載の基板。
- 裏面及び表面を含み、前記表面がその上で成長するSiCのエピタキシャル層を有し、前記エピタキシャル層を有する基板が、1平方cmのサイトサイズを基準にして、0.1〜1.8μmのLTV及び0.01〜0.45μmのSFQRを呈する、単結晶炭化ケイ素基板。
- 前記エピタキシャル層を有する基板が、0.1〜6μmのTTV及び0.1〜40μmの歪みを更に同時に呈する、請求項5に記載の基板。
- 前記表面の二乗平均平方根粗さ値Rqが、2.0×2.0μmのサイトサイズで測定されると、2nm未満である、請求項5又は6に記載の基板。
- 前記基板が、1平方cmのサイトサイズを基準にして、0.1〜5μmのTTV、0.1〜35μmの歪み、0.1〜1.5μmのLTV、及び0.01〜0.3μmのSFQRを同時に呈する、請求項5〜7のいずれか一項に記載の単結晶炭化ケイ素基板。
- 単結晶炭化ケイ素ウェハを製造する方法であって、
(i)単結晶シリコンのインゴットを複数のウェハにスライスする工程と、
(ii)工程(i)の前記ウェハのそれぞれの外周縁部を面取りする工程と、
(iii)工程(ii)の前記ウェハのそれぞれの表面及び裏面から鋸損傷除去を実行する工程と、
(iv)工程(iii)のそれぞれのウェハの両面を同時に研磨する工程と、を含み、
それによって1平方cmのサイトサイズを基準にして、0.1〜1.5μmのLTV及び0.01〜0.3μmのSFQRを有するウェハを製造する、方法。 - 工程(i)において、それぞれのウェハが10μm未満のTTV及び35μm未満の歪みに同時に適合する、請求項9に記載の方法。
- それによって、1平方cmのサイトサイズを基準にして、0.1〜5μmのTTV、0.1〜35μmの歪み、及び0.1〜1.5μmのLTVを有するウェハを製造する、請求項9又は10に記載の方法。
- 前記鋸損傷除去工程が、前記ウェハの直径より直径が少なくとも3倍大きい表面を有するラッピングツールを用いて行われる、請求項9〜11のいずれか一項に記載の方法。
- 基板スライスが、前記ウェハの前記直径より少なくとも3倍大きいテーブル直径を有する、両面ラッピング機でラッピングされる、請求項11又は12に記載の方法。
- スライスする工程の後、前記基板を単一のウェハ、ダイヤモンド砥石を用いて一度に一面に加工する、請求項11〜13のいずれか一項に記載の方法。
- 前記研磨工程が、前記ウェハの直径より直径が少なくとも3倍大きい表面を有する研磨ツールを用いて行われる、請求項9〜14のいずれか一項に記載の方法。
- 前記研磨工程が前記ウェハをステンレス鋼製キャリアに置くことにより行われる、請求項13〜15のいずれか一項に記載の方法。
- 前記研磨工程が、前記鋸損傷除去工程で除去されたSiCの25%を除去するように行われる、請求項14〜16のいずれか一項に記載の方法。
- 前記表面に化学強化型機械研磨を適用する工程を更に含む、請求項9〜17のいずれか一項に記載の方法。
- 前記化学強化型機械研磨を適用する工程が、前記ウェハの直径より3倍より大きい直径をもつ研磨機を用いて行われる、請求項16〜18のいずれか一項に記載の方法。
- 1300℃超の温度にて水素及び/又は塩素ガスを含有するガス混合物を用いて、CVDチャンバで前記ウェハの前記表面をエッチングする工程を更に含む、請求項9〜19のいずれか一項に記載の方法。
- 化学強化型機械研磨及び/又は高温気相エッチングで前記表面を処理し、その後、前記表面にSiCのエピタキシャル層を堆積させる工程を更に含む、請求項9〜20のいずれか一項に記載の方法。
- 前記鋸損傷除去工程がそれぞれのウェハから60〜85μmのSiC材料を除去するように行われ、前記研磨工程が前記鋸損傷除去工程中に除去されたSiC材料の量の4分の1を除去するように行われる、請求項9〜21のいずれか一項に記載の方法。
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US9018639B2 (en) | 2015-04-28 |
CN104813439A (zh) | 2015-07-29 |
US20140117380A1 (en) | 2014-05-01 |
KR20150074176A (ko) | 2015-07-01 |
EP2912681B1 (en) | 2016-10-26 |
WO2014065949A1 (en) | 2014-05-01 |
CN104813439B (zh) | 2017-04-12 |
EP2912681A1 (en) | 2015-09-02 |
US9165779B2 (en) | 2015-10-20 |
US20150194319A1 (en) | 2015-07-09 |
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