JP2017105697A - 薄型のSiCウエハの製造方法及び薄型のSiCウエハ - Google Patents
薄型のSiCウエハの製造方法及び薄型のSiCウエハ Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 49
- 238000005530 etching Methods 0.000 claims abstract description 160
- 238000000034 method Methods 0.000 claims abstract description 80
- 238000005498 polishing Methods 0.000 claims abstract description 35
- 238000010438 heat treatment Methods 0.000 claims abstract description 33
- 238000005520 cutting process Methods 0.000 claims abstract description 16
- 230000008569 process Effects 0.000 claims description 55
- 238000000227 grinding Methods 0.000 claims description 25
- 239000000126 substance Substances 0.000 claims description 21
- 230000003746 surface roughness Effects 0.000 claims description 10
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- 235000012431 wafers Nutrition 0.000 abstract description 227
- 238000012545 processing Methods 0.000 abstract description 19
- 230000002093 peripheral effect Effects 0.000 abstract description 14
- 230000015572 biosynthetic process Effects 0.000 abstract description 9
- 229910010271 silicon carbide Inorganic materials 0.000 description 220
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 219
- 238000012986 modification Methods 0.000 description 16
- 230000004048 modification Effects 0.000 description 16
- 238000009826 distribution Methods 0.000 description 15
- 238000002474 experimental method Methods 0.000 description 11
- 239000013078 crystal Substances 0.000 description 9
- 238000005259 measurement Methods 0.000 description 9
- 238000003754 machining Methods 0.000 description 8
- 239000011261 inert gas Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 238000001000 micrograph Methods 0.000 description 5
- 229910052715 tantalum Inorganic materials 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 229910003460 diamond Inorganic materials 0.000 description 4
- 239000010432 diamond Substances 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000007542 hardness measurement Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000007517 polishing process Methods 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 229910003468 tantalcarbide Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 2
- 238000007666 vacuum forming Methods 0.000 description 2
- 230000008016 vaporization Effects 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 150000003481 tantalum Chemical class 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000002255 vaccination Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
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Abstract
【解決手段】インゴット4を所定の間隔で切断して複数のSiCウエハ40を切り出すウエハ切出工程、SiCウエハ40の外周面に対して、機械加工等により面取りを行う外周面加工工程、SiCウエハ40を識別するための情報としての刻印を形成する刻印形成工程、続いて、Si蒸気圧下で加熱するSi蒸気圧エッチングにより、表面をエッチング速度500nm/min以上でエッチングし、100μm以下まで厚みを小さくする薄化工程、を含む薄型SiCウエハの製造方法。
【選択図】図3
Description
(1) SiC(s) → Si(v)I + C(s)I
(2) 2SiC(s) → Si(v)II + SiC2(v)
(3) SiC(s) + Si(v)I+II → Si2C(v)
10 高温真空炉
30 坩堝
40 SiCウエハ
41 刻印
Claims (17)
- インゴットから切り出された後のSiCウエハに対して、Si蒸気圧下で加熱することで表面をエッチングするSi蒸気圧エッチングを行うことで、厚みを100μm以下まで小さくする薄化工程を含むことを特徴とする薄型のSiCウエハの製造方法。
- 請求項1に記載の薄型のSiCウエハの製造方法であって、
前記薄化工程では、前記インゴットから切り出された後であって、前記SiCウエハの厚さを調整するための機械的な研削が行われていない前記SiCウエハに対して、前記Si蒸気圧エッチングを行うことを特徴とする薄型のSiCウエハの製造方法。 - 請求項1又は2に記載の薄型のSiCウエハの製造方法であって、
前記薄化工程では、前記インゴットからの切出し時に形成された前記SiCウエハの表面荒れを除去しつつ、当該SiCウエハの厚みを小さくすることを特徴とする薄型のSiCウエハの製造方法。 - 請求項1から3までの何れか一項に記載の薄型のSiCウエハの製造方法であって、
前記薄化工程では、前記SiCウエハの厚みを100μm以上除去することを特徴とする薄型のSiCウエハの製造方法。 - 請求項1から4までの何れか一項に記載の薄型のSiCウエハの製造方法であって、
前記薄化工程では、被処理面のエッチング速度が500nm/min以上のSi蒸気圧エッチングが少なくとも行われることを特徴とする薄型のSiCウエハの製造方法。 - 請求項1から5までの何れか一項に記載の薄型のSiCウエハの製造方法であって、
前記SiCウエハの面のうち、エピタキシャル層を形成するための面を主面としたときに、
前記薄化工程では、前記SiCウエハの主面、及び、当該主面の裏面の両方がエッチングされることを特徴とする薄型のSiCウエハの製造方法。 - 請求項1から6までの何れか一項に記載の薄型のSiCウエハの製造方法であって、
前記薄化工程では、表面が所定の形状に除去されることで情報を示す刻印が形成された前記SiCウエハに対して、前記Si蒸気圧エッチングを行うことを特徴とする薄型のSiCウエハの製造方法。 - 請求項7に記載の薄型のSiCウエハの製造方法であって、
前記薄化工程の前に、前記SiCウエハに前記刻印を形成する刻印形成工程が行われることを特徴とする薄型のSiCウエハの製造方法。 - 請求項1から8までの何れか一項に記載の薄型のSiCウエハの製造方法であって、
前記薄化工程では、前記SiCウエハの位置に応じてエッチング量を異ならせるように、前記Si蒸気圧エッチングを行うことを特徴とする薄型のSiCウエハの製造方法。 - 請求項9に記載の薄型のSiCウエハの製造方法であって、
前記薄化工程では、前記SiCウエハの中央部の厚みよりも外縁部の厚みが厚くなるように、かつ前記中央部の厚みが100μm以下となるように前記Si蒸気圧エッチングを行うことを特徴とする薄型のSiCウエハの製造方法。 - 請求項9又は10に記載の薄型のSiCウエハの製造方法であって、
前記薄化工程では、前記SiCウエハの厚みを小さくするとともに、前記SiCウエハの面取りを行うことを特徴とする薄型のSiCウエハの製造方法。 - インゴットから切り出された後のSiCウエハに対して、機械的な研削により厚みを小さくした後に、Si蒸気圧下で加熱することで表面をエッチングするSi蒸気圧エッチングを行って更に厚みを小さくすることで、厚みを100μm以下まで小さくする薄化工程を含むことを特徴とする薄型のSiCウエハの製造方法。
- 表面が所定の形状に除去されることで情報を示す刻印が形成されており、厚さが100μm以下の薄型であることを特徴とするSiCウエハ。
- 請求項13に記載のSiCウエハであって、
エピタキシャル層を形成する前のウエハであり、
ナノインデンテーション法を用い、荷重を500mN又は押し込み量を1μmとした条件で表面を計測した硬さが27GPa以上の部分が含まれていることを特徴とするSiCウエハ。 - 請求項13に記載のSiCウエハであって、
表面にエピタキシャル層が形成されており、
ナノインデンテーション法を用い、荷重を500mN又は押し込み量を1μmとした条件でエピタキシャル層の表面を計測した硬さが29.5GPa以上の部分が含まれていることを特徴とするSiCウエハ。 - 請求項13に記載のSiCウエハであって、
エピタキシャル層を形成する前のウエハであり、
ナノインデンテーション法を用い、荷重を500mN又は押し込み量を1μmとした条件で表面を計測した硬さが、化学機械研磨を行った後のSiCウエハよりも高いことを特徴とするSiCウエハ。 - 請求項13に記載のSiCウエハであって、
中央部と外縁部を含んで構成されており、前記中央部の厚みよりも前記外縁部の厚みが厚いことを特徴とするSiCウエハ。
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Cited By (11)
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---|---|---|---|---|
WO2019167337A1 (ja) * | 2018-03-01 | 2019-09-06 | 住友電気工業株式会社 | 炭化珪素基板 |
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CN111788339B (zh) * | 2018-03-01 | 2022-08-09 | 住友电气工业株式会社 | 碳化硅基板 |
JPWO2019167337A1 (ja) * | 2018-03-01 | 2021-02-12 | 住友電気工業株式会社 | 炭化珪素基板 |
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JP7217100B2 (ja) | 2018-07-25 | 2023-02-02 | 株式会社デンソー | SiCウェハの製造方法 |
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JP2020015643A (ja) * | 2018-07-25 | 2020-01-30 | 株式会社デンソー | SiCウェハの製造方法 |
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JP2020015646A (ja) * | 2018-07-25 | 2020-01-30 | 株式会社デンソー | SiCウェハの製造方法 |
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JP7228348B2 (ja) | 2018-07-25 | 2023-02-24 | 株式会社デンソー | SiCウェハの製造方法 |
JP7406914B2 (ja) | 2018-07-25 | 2023-12-28 | 株式会社デンソー | SiCウェハ及びSiCウェハの製造方法 |
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JP7198881B2 (ja) | 2021-05-14 | 2023-01-04 | 日揚科技股▲分▼有限公司 | 硬質材料加工システム |
JP2022176019A (ja) * | 2021-05-14 | 2022-11-25 | 日揚科技股▲分▼有限公司 | 硬質材料加工システム |
KR20230069019A (ko) | 2021-11-11 | 2023-05-18 | 가부시기가이샤 디스코 | SiC 기판의 제조 방법 |
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Also Published As
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US20170236905A1 (en) | 2017-08-17 |
KR20170061606A (ko) | 2017-06-05 |
US20180069084A1 (en) | 2018-03-08 |
TWI746468B (zh) | 2021-11-21 |
TW201742103A (zh) | 2017-12-01 |
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