TW310445B - - Google Patents

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Publication number
TW310445B
TW310445B TW083105982A TW83105982A TW310445B TW 310445 B TW310445 B TW 310445B TW 083105982 A TW083105982 A TW 083105982A TW 83105982 A TW83105982 A TW 83105982A TW 310445 B TW310445 B TW 310445B
Authority
TW
Taiwan
Prior art keywords
mounting
patent application
insulating layer
heating
item
Prior art date
Application number
TW083105982A
Other languages
English (en)
Chinese (zh)
Original Assignee
Tokyo Electron Co Ltd
Tokyo Electron Tohoku Kk
Shinetsu Chem Ind Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP18550293A external-priority patent/JP3342118B2/ja
Application filed by Tokyo Electron Co Ltd, Tokyo Electron Tohoku Kk, Shinetsu Chem Ind Co filed Critical Tokyo Electron Co Ltd
Application granted granted Critical
Publication of TW310445B publication Critical patent/TW310445B/zh

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Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
TW083105982A 1993-06-24 1994-06-30 TW310445B (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP18085193 1993-06-24
JP18550293A JP3342118B2 (ja) 1993-06-29 1993-06-29 処理装置
JP18550393 1993-06-29
JP18551993 1993-06-29
JP26441293 1993-09-28

Publications (1)

Publication Number Publication Date
TW310445B true TW310445B (ja) 1997-07-11

Family

ID=51566342

Family Applications (1)

Application Number Title Priority Date Filing Date
TW083105982A TW310445B (ja) 1993-06-24 1994-06-30

Country Status (1)

Country Link
TW (1) TW310445B (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI746468B (zh) * 2015-11-26 2021-11-21 日商東洋炭素股份有限公司 薄型ＳｉＣ晶圓之製造方法及薄型ＳｉＣ晶圓

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI746468B (zh) * 2015-11-26 2021-11-21 日商東洋炭素股份有限公司 薄型ＳｉＣ晶圓之製造方法及薄型ＳｉＣ晶圓

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