TW310445B - - Google Patents

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TW310445B
TW310445B TW083105982A TW83105982A TW310445B TW 310445 B TW310445 B TW 310445B TW 083105982 A TW083105982 A TW 083105982A TW 83105982 A TW83105982 A TW 83105982A TW 310445 B TW310445 B TW 310445B
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Tokyo Electron Co Ltd
Tokyo Electron Tohoku Kk
Shinetsu Chem Ind Co
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A7 31C445 B7 五、發明説明（1 ) 〔產業上之利用領域〕 本發明，係有關在眞空下爲了對被處理體進行成膜及 蝕刻等處理用的眞空處理裝置， (請先聞讀背面之注ί項再填寫本頁) 〔習知技藝〕 在半導體晶片製造工程，做爲在半導體晶片之表面形 成絕緣膜或矽的薄膜之薄膜形成裝置，已在使用頁紙式 CVD裝置。如此的頁紙式CVD裝置，具有在眞空環境 進行成膜用之氣密的處理室，在其中設有保持晶片用之載 置台。然後，在該載置台上面，設有利用靜電力將半導體 晶片吸著用的靜電夾。 如此之靜電夾，具有將薄的導電體之上下面以絕緣層 挾住的構造，將根據在上述導電體施加直流電壓時所發生 之庫侖力或强生一拉別克（J 〇 h n s e n R a h b e c k )力把晶片 吸著保持。 經濟部中央樣準局員工消費合作社印製 可是，在C V D裝置，以確保成膜的均匀性之意義而 要求被處理體的面內均勻性，亦即，將要求在面內之溫度 分佈的均匀性。因此，習知者，係在上述處理室內設有將 被處理體加熱爲適當溫度用之加熱裝置。做爲該加熱裝置 ，係使用在上述靜電夾的下面側，配置在和靜電夾隔離之 位置，使加熱裝置的發熱體之熱會根據輻射而傳達到上側| 的靜電夾者。 然而，如此地把靜電夾和加熱裝置隔離設置*根據加 熱裝置之輻射熱把靜電夾上的晶片加熱時’將會產生如下 本紙乐尺度適用中國國家標率（CNS ) Α4规格（210Χ297公釐> ^10445 a? Β7 經濟部中央樣準局員工消費合作杜印裂 五、發明説明（2 ) 之問題。 首先，因爲把從加熱裝置的熱根據輻射使之傅達，所 以傳達效率不太佳。而且，通常此種載置台，係設在例如 設定成1 0 ^To r r的眞空環境之氣密的處理室內，所 以設置在處理室內時熱傳達率將會更降低，所以不得不把 加熱裝置設置在處理室外部之大氣中。 同時，做爲改善傳達效率者，有在被處理體的載置面 ，例如，根據螺旋狀之發熱電阻體加熱者。然而，此時由 於發熱體接近做爲被處理體的半導體晶片，所以發熱體之 配置圖型的影響將會直接出現在晶片上，由於據此之溫度 分佈的不均匀，而有無法進行均勻處理之問題。在上述 CVD裝置，如果發生如此的溫度分佈之不均勻時，將不 能形成均匀的膜。 並且，因使裝載靜電夾之載置台和加熱裝置成爲各別 者，所以構件數多而裝配時間也長，隨之成本也高。 可是，在頁紙式CVD裝置，需要在被處理體的半導 | 體晶片上使薄膜均勻地成長，因此將要求在半導體晶片之 表面全體把反應性處理氣體均勻地供給。因此，自先前， 爲了把反應性處理氣體均勻地供給到半導髏晶片的表面全： 體，把在氣體吹出面有多數之孔以均勻的間隔穿孔之蓮蓬 頭設在處理室的頂部。 根據習知之蓮蓬頭，把處理氣體從其蓮蓬頭的對向於 被處理體之面全體均勻地吹出時，處理氣體的流置將有從 被處理體之中央部向端部增加的傾向。因此，處理氣體之 (請先M讀背面之注意事項再填寫本f 裝-- τ ,va ------if----J——k------ 本紙張尺度適用中國國家樣準（CNS > A4规格（2丨0X297公釐} ........*....................11111·ι"·ι"ιι·ιι III μι ιι ||Ι· IIVI ·- 經濟部中央標準局員工消費合作杜印製 310445 a7 _____ B7 五、發明説明（3 ) 漉度境界層的厚度將會愈靠近半導體晶片之中央部愈厚， 而愈靠近端部愈薄。結果，即使從蓮蓬頭的氣體吹出面將 處理氣體均勻地供給到處理室内，也不--定能使處理氣體 以均勻之澳度分佈在半導體晶片的反應表面，因此，有成 膜率將會變成不均匀之處。 一方面，在靜電夾將需要從高壓電源的給電，同時， 在把被處理體加熱用之發熱體將需要大電力，所謂，從能 旋加高電流的電源之給電，但是，C. V D製膜裝置，係如 上述，以眞空環境進行處理，所以將容易在導電體間發生 放電。而且，從接近加熱器處的配線露出部，有時會根據 金饜蒸氣之發生而產生對被處理體的重金靨污染。因此， 不得不在大氣中進行配線。所以，因爲配線將需要和眞空 環境之遮斷構造，故其構造將變成複雜。而且，遮斷構造 將會接觸被處理髄的加熱溫度璣境，而有無法維持耐久性 之虞。因此，不只是遮斷構造將變爲複雜，同時需要如此 的構造之份成本將會增加。 〔發明之概要〕 本發明之目的，係在提供從加熱裝置之熱傳達效率高 ，提高半導體晶片等被處理體的均熱性之眞,空處理裝置。 本發明之其他目的，係提供在保持眞空中之處理室內 ，能夠進行靜電夾和加熱器的給電用配線之眞空處理裝置 0 本發明之更其他目的，係提供在如此之眞空處理裝® 本紙張尺度適用中國國家揉準（CNS ) A4规格（2丨0 X 297公1 ) (請先聞讀背面之注意事項再填寫本頁) 裝- 訂 31C445 A 7 B7 五、發明説明（4 ) 所使用的，具有靜電夾及加熱機能之被處理體的載置台。 根據本發明之第1觀點時，將提供具有在眞空下進行 處理被處理體的處理室； 和設在前述處理室內，有載置前述被處理體用的載置 面之載e構件： 和設在前述載置構件的載置面，使前述被處理體吸著 用之靜電吸著裝置： 和將前述被處理體加熱用的加熱裝置： 和對前述處理室供給將被處理體處理用的處理氣體之 處理氣體供給裝置； 前述載e構件，但具有基材，和形成在該基材表面的 第1絕綠層，和設在第1絕緣層上之第2絕緣層， 在前述載置構件的前述載置面側的第1絕緣層和第2 絕緣層之間具有導電層，根據前述第1絕綠層，和前述第 2絕緣層，與前述導電層構成前述靜電吸著裝置’ 前述加熱裝置，係具有在和前述載置構件的載置面相 反側之面側的第1絕緣層與第2絕緣層之間所設的加熱體 之眞空處理裝置。 根據本發明之第2觀點，將提供具有，將在眞空下進 行處理被處理體的處理室； 和設在前述處理室內，有載置前述被處理體用的載置 面之載置構件： 和設在前述載置構件的載置面，爲了使前述被處理髏 吸著用之靜電吸著裝置： 太紙張尺度適用中國國家標準（CNS ) A4规格(21(Γχ 297公|ίΤ (讀先聞讀背面之注意事項再填寫本頁 1 裝 、-=* 經濟部中央標準局員工消費合作社印製 A7 S1C445 __B? _ 五、發明説明（5 ) 和爲了將被處理體加熱用之加熱裝置： (請先閲讀背面之注意事項再填寫本頁) 和對前述處理室供給處理被處理體用的處理氣體之處 理氣體供給裝置： 前述載置構件，係具有絕綠性的基材，和形成在該基 材表面之絕緣層， 在前述載置構件的前述載置面側之基材和絕綠屠之間 有導電層，根據前述基材和前述絕緣層，和前述導電層構 成前述靜電吸著裝置， 前述加熱裝置，具有設在和前述載置構件的載置面相 反側之面側的基材與絕緣層之間的加熱體之眞空處理裝置 0 根據本發明之第3觀點時*將提供具有，在眞空下進 行處理被處理體的處理室； 和設在前述處理室內，有載置前述被處理髋用的載置 面之載置構件： 和爲了將前述被處理體加熱用的加熱裝置： 經濟部中央標隼局員工消費合作杜印聚 和對前述處理室供給處理被皰理體用的處理氣體之處 理氣體供給裝置； 前述載置構件，但具有基材，和形成在該基材表面的 絕緣層， 前述加熱裝置，具有在和前述載置構件的基材之載置 面相反側之面以所定間隔所設的螺旋狀或同心狀之加熱體 前述基材的厚度，係設定爲比前述加熱體之間隔大的 東紙張尺度適用中國國家標準（CNS ) A4胡潘（2丨0乂297公系) —- 經濟部中央橾準局員工消费合作社印装 A 7 B7 五、發明説明（6 ) ~~ 眞空處理裝置。 根據本發明之第4觀點時，將提供具有在眞空下進行 處理被處理體的處理室： 和設在前述處理室內，有爲了載置前述被處理體用的 載置面之載置構件； 和爲了加熱前述被處理體用的加熱裝®： 和對前述處理室供給處理被處理體用之處理氣體的處 理氣體供給裝置； 前述加熱裝置，係具有設在和前述載置構件的載置面 相反側之面的中央加熱體，和前述載置構件側部之側部加 熱體的眞空處理裝置。 根據本發明之第5觀點時，將提供具有在眞空下進行 處理被處理體的處理室： 和設在前述處理室內，有爲了載置前述被處理體用之 載置面的載置構件； 和設在前述載置構件的載置面，爲了使前述被處理體 吸著用之靜電吸著裝置： 和對前述處理室供給處理被處理體用之處理氣雠的處 理氣體供給裝置： 前述靜電吸著裝置，有將施加高電之電極；和介裝 在電極與被處理體之間的絕緣層： 前述絕緣層，係在前述被處理體之處理中體積電阻係 數1 0 6〜1 0 1 2 Ω . c m，其吸著面的表面粗縫度R a 爲Ο . 2〜3 . l"m之眞空處理裝置° 木紙張尺度適用中國國家揉準（CNS ) A4规格（210X297公釐） (請先聞讀背面之注意事呼再填寫本頁) 裝· 訂 310445 at _ B7 五、發明説明（7 ) 根據本發明之第6觀點時，將提供具有在眞空下進行 處理被處理體的處理室； 和設在前述處理室內，有爲了載置前述被處理體用的 載置面之載置構件： 和爲了將前述被處理體加熱用的加熱裝置： 和爲了控制前述加熱裝置用之控制裝置： 和對前述處理室供給了爲了處理前述被處理體用的處 理氣體之處理氣體供給裝置： 前述加熱裝置，係使之有對應於形成在前述載置構件 的載e面成同心狀之多數領域地，設在前述載置構件的多 數加熱體， 前述控制裝置將各別地控制此等加熱體之輸出，的眞 空處理裝置。 根據本發明之第7觀點時，將提供具有在眞空下進行 處理被處理體的處理室： 和設在前述處理室內，有載置前述被處理體用的載置 面之載置構件； 經濟部中央橾準局員工消費合作社印製 (請先聞讀背面之注意事項再填寫本頁) 和將前述被處理體加熱用的加熱裝® : 和對前述處理室供給處理被處理體用之處理氣體的處 理氣體供給裝置； 和控制從處理氣體供給裝置Z處理氣體供給量用的控 制裝置： 前述處理氣體供給裝置，係設成對向於前述被處理體 ，有區畫成同心狀的多數氣體吐出領域之處理氣讎導入構 ~~~·' . 本紙张尺度適用中國國家梯率（CNS )六4規格（2丨0X297公* ) - 10 - --................ . ................. ................................ ..ww«-靜 . 經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明（8 ) 件， 前述控制裝置，將各別地控制從各領域的氣體吐出量 之眞空處理裝置。 根據本發明之第8觀點時，將提供具有在眞空下進行 處理被處理體的處理室； 和設在前述處理室內，有載置前述被處理體用之載置 面的載置構件； 和在處理被處理體時將被供給電力之被給電部： 和具有底開口部，和設在其基端側的接點，和形成在 其開口端側之絕緣被覆，將電性地連接在前述被給電部的 插座端子： 和能壓入到該插座端子，而在壓入時將接觸在前述接 點之插頭端子： 的眞空處理裝置。 根據本發明之第9觀點時*將提供具有載置被處理體 用的載置面之載置構件： 和設在前述載置構件的載置面，使前述被處理體吸著 用的靜電吸著裝置； 和爲了將前述被處理體加熱用之加熱裝置； 前述載置構件，有基材，和形成在該基材表面的第1 絕緣層，和設在第1絕緣層上之第2絕緣層， 在前述載置構件的前述載置面側的第1絕綠層和第2 絕緣層之間有導電層，根據前述第1絕緣層，和前述第2 絕緣層，與前述導電層構成前述靜電吸著裝置， 象紙張尺度適用中國國家棵準（CNS 規格（210X297公:缓） η ----ΓF — Λ 裝！ (讀先閱讀背面之注意事項再填寫本頁) 、-° 嫁 31C445 A7 B7 五、發明説明（9 ) 前述加熱裝置，有設在和前述載置構件的載置面相反 側之面側的第1絕綠層與第2絕緣層之間的加熱體之，具 有靜®吸著機能及加熱機能的載置台。 根據本發明之第1 0觀點時，將提供具有載置被處理 體用的載e面之載置構件： 和設在前述載置構件的載置面，爲了使前述被處理髏 吸著用的靜電吸著裝置： 和爲了將前述被處理體加熱用之加熱裝置； 前述載置構件，有絕綠性的基材，和形成在該基材表 面之絕緣層， 在前述載置構件的前述載置面側之基材和絕綠層之間 有導電層，根據前述基材，和前述絕緣層，與前述導電層 構成前述靜電吸著裝置， 前述加熱裝置，有設在和前述載置構件的載置面相反 側之面側的基材與絕緣層之間的加熱體，具有靜電吸著機 能及加熱機能的載置台。 同時，在本發明中所謂眞空處理，係意圖包含所有以 比常壓低之壓力的處理者。 〔實施例] 以下，參照附圖詳細說明有關本發明之理想形態。 圖1係將有關本發明的第】形態之頁紙式的冷壁型之 C V D裝置模式性地顯示的剖面圖。該c V D裝置1有構 成氣密之略圆筒狀的處理室2 ，在其中設有載置被處理體 12 (請先閲讀背面之注意事項再填寫本頁) 裝. -* 經濟部中央標準局員工消費合作社印裝 本紙張尺度逋用中國國家橾準（CNS ) A4规格（2! Ο X 297公釐） 經濟部中央橾準局負工消费合作社印製 A7 B7 五、發明説明（10) 之半導體晶片W用的載置台2 1 。 在該處理室2之上面，有成爲中空的盤狀之蓮蓬頭3 設成氣密。在該蓮蓬頭3的上部，設有處理氣髏導入管4 ，同時在對向於其載置台2 1之面，設有多數的吐出口 5 。處理氣體導入管4係連接到氣髏供給源4 a，從該氣體 供給源4 a，有處理氣體，例如S i Η 4 (矽烷）和Η 2之 混合氣體，通過處理氣體導入管4至蓮蓬頭3的中空部， 經上述多數之吐出口 5均等地向處理室2內的載置台2 1 吐出。 在上述處理室2之底部附近，設有通到眞空泵等排氣 裝置6的排氣管7，根據該排氣裝置6之動作，上述處理 室2 ，係成爲能夠保持所定的減壓環境，例如 1 0 一6 Τ 〇 r r ° 上述處理室2之底部，係由略圓简狀的支持體8所支 持之底板9構成。在該底板9的內部設有冷卻水備留處 1 0，冷卻水將從冷卻水供給源1 1經冷卻水管1 1 a供 給到該冷卻水儲留處1 〇 ，從未圖示之排出管排出冷卻水 儲留處1 0的冷卻水，而循環冷卻水儲留處1 〇內。 前述載置台2 1 ，係設在底板9之上面，其側面外周 係以筒狀的隔壁3 7所圍繞。該載置台2 1 ’係如圖2 ， 圖3所示，根據基材2 2 ’和設成優蓋該基材2 2表面之 第1絕緣層2 3，和設在該第1絕緣靨2 3上面的薄之導 電體2 4 ，2 5，和直接設在上述第1絕緣層2 3下面的 加熱器2 6 ，和如覆蓋第1絕綠暦2 3 ’電極2 4 ，2 5 未紙張尺度適用中國國家梂準（CNS > A4規格（210X297公t > (請先聞讀背面之注意事項再填寫本頁) - " A7 B7 ^10445 五、發明説明（11 ) 及加熱器2 6地形成在最外層之第2絕緣層2 7所構成。 上述基材2 2 ，係有例如直徑爲2 8 Omm而有一定 厚度的略盤狀之形態，以例如C (碳）或B N (氮化硼） 等所構成。設在該基材2 2表面的第1絕綠層2 3，係由 根據C V D處理所形成之，例如P — B N (焦—氮化硼） ，Si〇2(氧化矽），A1N (氮化鋁），A52〇3( 氧化鋁）或S i N (氮化矽）等的薄被膜所構成。 設在第1絕緣層2 3上面之上述導電體2 4 ，2 5， 係如圖3所示地分別有略半圓形狀，在上述處理室2外部 所設的極性互異之直流高壓電源2 8，2 9各別獨立地連 接，根據第1絕緣層2 3，第2絕緣層2 7及電極2 4 ， 2 5構成所謂雙極型的靜電夾S。 —方面，設在第1絕緣層2 3下面之上述加熱器2 6 ，係具有將略帶狀的發熱體2 6 a以適當間隔（半徑方向 之間隔）d配設成螺旋狀的發熱圖型，將根據設置在上述 處理室2外部之交流電源3 0 ，發生所定的溫度，例如 4 0 0 °C〜1 2 0 0 °C之任意溫度的熱。再者，也可以具 有適當間隔把多數之發熱體配置成同心狀。 被覆此等導竄體2 4 ，2 5和上述加熱器2 6表面的 第2絕綠層2 7 ，係和第1絕緣層2 3 —樣，根據由 C V D處理所形成之，例如P 一 B N (焦—氮化硼）， 5 i 〇 2 (氧化矽），A 1 N (氮化鋁），Α β 2 0 3 (氧 化鋁）或S i Ν (氮化矽）等的薄被膜所構成。 基材2 2的厚度（高度）D 1係設定成比在上述加熱 本紙張尺度適用中國國家橾準（CNS ) A4规格（210 X 2打公t ) (請先閱讀背面之注意事項再填离本頁 裝· 訂 經濟部中央標準局員工消费合作社印装 ^10445 A7 B7 五、發明説明（l2 ) 器2 6之發熱體2 6 a的間隔d大，具有例如2 〇〜4 0 m m之厚度。 如此構成的載置台21 ，係如上述地設置在處理室2 內之底板9上，並且，如圇1所示，在其中心部設有貫穿 的傳熱媒體供給管3 1 ，和與該傅熱媒體供給管3 1相通 之流路3 2，從處理室2外部經上述傅熱媒體供給管3 1 所供給的傅熱媒體，例如H e氣體，將供給到載置在載置 台21之晶片W的背面。 同時，在載置台2 1設有溫度察覺器3 3 °骸溫度察 覺器3 3，具有設在基材2 2中之檢知部3 4 ’和測定部 3 5 ，將根據從檢知部3 4的信號以測定部3 5依次測定 溫度，而從測定部3 5之信號將輸入到控制器3 6 °然後 根據從該溫度察覺器3 3的信號，將從控制器3 6向加熱 器2 6之電源3 0及冷卻水供給源1 1等輸出控制信號， 由調整加熱器2 6的輸出及冷卻水之流量等，將使載置台 2 1的載置面之溫度控制爲所定値。 在處理室2內，設有把做爲被處理體的半導體晶片W 從載g台2 1抬起，或降下到載置台2 1用之升降機4 1 。該升降機4 1 ，具有一對載置構件4 2 a，4 2b，和 驅動此等載置構件4 2 a，4 2 b用的一對驅動機構 4 3 a ，4 3 b，和爲了分別將載置構件4 2 a ，4 2 b 支持在驅動機構4 3 a，4 3 b用之—對支持桿4 4 a， 4 4 b ° 驅動機構4 3 a，4 3 b *係例如以馬達或缸所構成 本紙張尺度通用中國國家標準（CNS ) A4規格（2!0X297公釐> (請先間讀背面之注意事項再填寫本頁 ~ 、1° 經濟部中央標準局員工消費合作社印製 15 號專利甲諝I+文説明書#正頁 ’民國8坪3月修正 A7 A7 B7 五、發明说明（13 4^JL· 補充 經濟部中央梂準局員工消费合作社印製 ，而設在處理室2的下方，支持a ，4 4 b係將由 隔壁3 7，底板9之側面，及支持體8的側面，和處理室 2之側壁2 a所形成的環狀z空間2 b內向垂直方向延伸 〇 該升降機41的載置構件42a ，42b，係如圖4 所示，呈適合晶片W之曲率的半環狀，在各載置構件 42a ，42b之內周，分別突設有弧狀的卡止部45a ，4 5 b。然後，晶片w，將以其周緣部卡止在此等卡止 部45a ，45b之狀態，由載置構件42a ，42b所 支持。 再者，升降機41，也可以如圖5所示，構成在一對 半環狀的載置構件4 2 a，4 2 b之內周，分別設置數處 卡止突起46a ，46b者。 然後，前述支持體44a ，44b ，係如圖1所示， 貫穿把前述環狀的空間2 b之底部氣密地封閉的環狀之支 持板47，連接在驅動機構43a ，43b，將根據該驅 動機構的動作而上下動。 同時在上述支持板4 7之支持桿4 4 a ，4 4 b的貫 穿處，分別有風箱48a ，48b介在，將根據此等風箱 48a ，48b ，確保處理室2內之氣密性。 在如上述地構成的處理室2之側方，設有經由閘閥 5 1構成氣密的裝載固定室5 2 ，其內部將從設在底部之 排氣管5 3抽真空，該裝載固定室5 2內，也和上述處理 室2 —樣，成爲能夠保持所定的減壓環境，例如 (請先閱讀背面之注意事項再填寫本頁)A7 31C445 B7 V. Description of the invention (1) [Industrial application field] The present invention relates to a void processing device for filming and etching of the object to be processed under the void, (please read the back page first Note ί item and then fill out this page) [Conventional Techniques] In the semiconductor wafer manufacturing process, as a thin film forming device for forming an insulating film or a silicon thin film on the surface of a semiconductor wafer, a sheet-type CVD device has been used. Such a sheet-type CVD apparatus has an airtight processing chamber for film formation in a void environment, and a stage for holding wafers is provided therein. Then, an electrostatic clamp for attracting the semiconductor wafer by electrostatic force is provided on the top of the mounting table. Such an electrostatic clamp has a structure that encloses a thin conductor above and below it with an insulating layer, and it will be based on the Coulomb force or the Johnson-Rabeck force that occurs when a DC voltage is applied to the above conductor Hold the wafer by suction. Printed by the Employees ’Consumer Cooperative of the Central Bureau of Samples of the Ministry of Economic Affairs. However, in order to ensure the uniformity of the film formation in the CVD device, the in-plane uniformity of the processed body is required, that is, the uniform temperature distribution in the surface Sex. Therefore, those skilled in the art are provided with a heating device for heating the object to be processed to an appropriate temperature in the processing chamber. As the heating device, it is used on the lower side of the electrostatic clip, and is arranged at a position separated from the electrostatic clip, so that the heat of the heating element of the heating device will be transmitted to the upper side of the electrostatic clip according to the radiation. However, in this way, the electrostatic clip and the heating device are isolated. When the wafer on the electrostatic clip is heated according to the radiant heat of the heating device, the following paper music standards will be applied to the Chinese national standard (CNS) Α4 specification (210Χ297 mm) ^ 10445 a? Β7 Ministry of Economic Affairs Central Sample Bureau Employee Consumer Cooperation Du Yin crack 5. Invention description (2) The problem. First, because the heat from the heating device is made up by radiation, so the transmission efficiency is not good. Moreover, usually such a mounting table is installed in an airtight processing chamber set to an empty environment such as 10 ^ To rr, so the heat transfer rate will be lowered when installed in the processing chamber, so the heating device has to be installed In the atmosphere outside the processing chamber. At the same time, as a means of improving the transmission efficiency, there is a mounting surface on the body to be processed, for example, a heater based on a spiral heating resistor. However, at this time, due to the proximity of the heating element The semiconductor wafer of the processing body, so the influence of the layout pattern of the heating body will appear directly on the wafer. Due to the uneven temperature distribution according to this, there is no way The problem of uniform treatment. In the above CVD device, if such uneven temperature distribution occurs, a uniform film cannot be formed. Moreover, since the mounting table and the heating device on which the electrostatic clip is mounted are separate, the number of components It takes much time to assemble and the cost is also high. However, in the sheet-type CVD apparatus, it is necessary to uniformly grow the thin film on the semiconductor wafer of the object to be processed, so it will require the entire surface of the semiconductor wafer The reactive processing gas is uniformly supplied. Therefore, in order to uniformly supply the reactive processing gas to the entire surface of the semiconductor wafer, the shower head with a large number of holes perforated on the gas blowing surface at even intervals is provided. At the top of the processing chamber. According to the conventional shower head, when the processing gas is evenly blown out from the face of the shower head to the surface of the body to be processed, the flow of processing gas will increase from the center to the end of the body to be processed The tendency is to deal with the gas. (Please read the precautions on the back first before filling in this f pack-τ, va ------ if ---- J ---- k ------ This paper scale Applicable to China National Standard (CNS & A4 specifications (2 丨 0X297mm) ........ * ................... 11111 · ι " · Ι " ιι · ιι III μι ιι || Ι · IIVI ·-Ministry of Economic Affairs Central Standards Bureau employee consumption cooperation du printing 310445 a7 _____ B7 V. Description of invention (3) The thickness of the boundary layer will be closer to the semiconductor The thicker the central part of the wafer, and the thinner the closer to the end. As a result, even if the processing gas is evenly supplied into the processing chamber from the gas blowing surface of the shower head, it will not be able to distribute the processing gas in a uniform degree. The reaction surface of the semiconductor wafer, therefore, has a film formation rate that will become uneven. On the one hand, the electrostatic clip will require power supply from a high-voltage power supply, and at the same time, the heating element for heating the body to be processed will require large power, so-called, power supply from a power supply capable of rotating high current, but, C. VD system The membrane device is treated in a void environment as described above, so discharge will easily occur between conductors. Furthermore, from the exposed portion of the wiring close to the heater, heavy gold contamination of the object to be treated may occur due to the occurrence of gold vapor. Therefore, wiring has to be performed in the atmosphere. Therefore, since the wiring will require an interruption structure to the empty environment, its structure will become complicated. Moreover, the blocking structure will be exposed to the heating temperature of the treatment, and there is a possibility that the durability cannot be maintained. Therefore, not only will the blocking structure become complicated, but also the cost of requiring such a structure will increase. [Summary of the Invention] An object of the present invention is to provide a high-efficiency heat transfer efficiency from a heating device, and to improve the thermal uniformity of a semiconductor wafer and other objects to be processed, a hollow processing device. Another object of the present invention is to provide an empty processing device capable of carrying out power supply wiring for electrostatic clips and heaters in a processing chamber that maintains an empty space. A further object of the present invention is to provide such empty processing equipment in this paper The standard is applicable to the Chinese National Standard (CNS) A4 specification (2 丨 0 X 297 1) (please read the precautions on the back and then fill out this page) Binding-Order 31C445 A 7 B7 5. Description of the invention (4) , A mounting table with electrostatic clamp and heating function of the object to be processed. According to the first aspect of the present invention, there will be provided a processing chamber having a processing object to be processed under a void; and an e-carrying member provided in the processing chamber and having a mounting surface for mounting the to-be-processed object: and On the mounting surface of the mounting member, an electrostatic adsorption device for adsorbing the object to be processed: and a heating device for heating the object to be processed: and supplying a process for processing the object to the processing chamber Gas processing gas supply device; the aforementioned e-carrying member, but having a base material, and a first green layer formed on the surface of the base material, and a second insulating layer provided on the first insulating layer, on the placing member The first insulating layer on the placement surface side and the second insulating layer have a conductive layer between them, according to the first green insulation layer, and the second insulating layer, and the conductive layer constitute the electrostatic adsorption device 'the heating The device is a void processing device having a heating body provided between the first insulating layer and the second insulating layer on the surface side opposite to the mounting surface of the mounting member. According to a second aspect of the present invention, there will be provided a processing chamber having a processing object to be processed under a void; and a mounting member provided in the processing chamber and having a mounting surface for mounting the processing object: and In order to make the electrostatic adsorption device used for the adsorption of the treated skeleton installed on the mounting surface of the aforesaid mounting member: Too paper size is applicable to the Chinese National Standard (CNS) A4 specification (21 (Γχ 297 公 | ίΤ (读 先 闻Read the precautions on the back and then fill out this page. 1 set,-= * A7 S1C445 __B? _ Printed by the Employee Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs. 5. Description of the invention (5) and the heating device for heating the body to be processed: ( Please read the precautions on the back before filling in this page) and the processing gas supply device that supplies the processing gas for processing the object to the aforementioned processing chamber: The aforementioned mounting member is a base material with greenness, and is formed on this The insulating layer on the surface of the base material has a conductive layer between the base material on the side of the mounting surface of the mounting member and the green grass, and the electrostatic absorbing device is constituted by the base material and the insulating layer, and the conductive layer The above-mentioned heating device is provided with a heating body provided between the base material and the insulating layer on the surface side opposite to the mounting surface of the mounting member. 0 According to the third aspect of the present invention, * , A processing chamber for processing the body to be processed under the empty space; and a mounting member provided in the processing chamber and containing a mounting surface for the hip to be processed: and a heating device for heating the body to be processed: Ministry of Economic Affairs Central Standard Falcon Bureau employee consumption cooperation Du Yinju and a processing gas supply device that supplies the processing gas for treating the blister body to the aforementioned processing chamber; the aforementioned mounting member, but having a substrate, and formed on the surface of the substrate The insulating layer of the heating device has a spiral or concentric heating body provided at a predetermined interval on the surface opposite to the mounting surface of the base material of the mounting member. The thickness of the base material is set to a ratio The eastern paper scale with large intervals between the aforementioned heating bodies is applicable to the Chinese National Standard (CNS) A4 Hu Pan (2 丨 0 297 public line) —- Printed by the Central Consumer ’s Consumer Cooperative of the Central Ministry of Economic Affairs A 7 B7 V. DESCRIPTION OF THE INVENTION (6) ~~ The empty processing device. According to the fourth aspect of the present invention, a processing chamber having a processing object to be processed under the empty space will be provided: and provided in the processing chamber for the purpose of placing the processed object A mounting member for the mounting surface for use; and a heating device for heating the object to be processed®: and a processing gas supply device for supplying the processing gas for processing the object to the processing chamber; the heating device is provided with The central heating body on the side opposite to the mounting surface of the mounting member and the side heating device of the side heating member on the side of the mounting member. According to the fifth aspect of the present invention, there will be provided The processing chamber for processing the object to be processed below: and the mounting member provided in the processing chamber for mounting the mounting surface for the object to be processed; and the mounting surface provided for the mounting member for the foregoing Electrostatic adsorption device for absorbing the object to be processed: and a processing gas supply device for supplying the processing gas for processing the object to the processing chamber: the electrostatic absorbing device includes: An electrode to which high electricity is applied; and an insulating layer interposed between the electrode and the object to be treated: the aforementioned insulating layer is a volume resistivity of 1 0 6 ~ 1 0 1 2 Ω. Cm in the treatment of the aforementioned object, which The roughness R a of the surface of the suction surface is Ο. 2 ~ 3. L " m's empty processing device ° The wooden paper scale is applicable to the Chinese national standard (CNS) A4 specification (210X297 mm) (please read the back side first Please pay attention to it and fill out this page) Binding · Order 310445 at _ B7 V. Description of the invention (7) According to the sixth aspect of the present invention, a processing room with a body to be processed under empty space will be provided; In the processing chamber, there are a mounting member for mounting the mounting surface for the object to be processed: and a heating device for heating the object to be processed: and a control device for controlling the heating device: and the processing chamber A processing gas supply device that supplies a processing gas for processing the object to be processed: The heating device is provided in the carrier so that it has many areas that are concentrically formed on the carrier e surface of the mounting member. Configuration Zhen empty processing apparatus the number of multi-heater, said control means individually controls the output of the heating body of these, the. According to the seventh aspect of the present invention, there will be provided a processing chamber having a processing object to be processed under empty space: and a mounting member provided in the processing chamber and having a mounting surface for mounting the processing object; Printed by the Central Consumer Council Cooperative Staff Consumer Cooperative (please read the precautions on the back before filling in this page) and the heating device for heating the object to be processed®: and supply the process gas for processing the object to the processing chamber Processing gas supply device; and a control device for controlling the processing gas supply amount from the processing gas supply device Z: the processing gas supply device is set to be opposed to the object to be processed, and most of the gas is drawn concentrically Introduce the structure of the treatment of gas in the field ~~~ · '. This paper scale is applicable to the Chinese National Gradient (CNS) 6.4 specifications (2 丨 0X297g *)-10---..... ..... ............................................... ..... ww «-Jing. A7 B7 printed by the Employee Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economy V. Description of the invention (8) The aforementioned control device will individually control the gas emission from various fields Zhen amounts of air treatment apparatus. According to the eighth aspect of the present invention, there will be provided a processing chamber having a processing object to be processed under a void; and a mounting member provided in the processing chamber and having a mounting surface for mounting the processing object; and When the object to be processed is processed, the power feeding part to which power will be supplied: and the bottom opening part, and the contact provided on the base end side, and the insulating coating formed on the opening end side, are electrically connected to the aforementioned The socket terminal of the power supply unit: and the empty processing device that can be pressed into the socket terminal and will contact the plug terminal at the aforementioned contact: during pressing. According to the ninth aspect of the present invention, a mounting member having a mounting surface for mounting an object to be processed: and an electrostatic attraction for absorbing the object to be processed may be provided on the mounting surface of the mounting member A heating device for heating the object to be processed; the mounting member has a base material, a first insulating layer formed on the surface of the base material, and a second insulating layer provided on the first insulating layer A layer, a conductive layer between the first green layer and the second insulating layer on the mounting surface side of the mounting member, and the first insulating layer and the second insulating layer constitute the foregoing with the conductive layer Electrostatic adsorption device, like paper scale, suitable for Chinese national standard (CNS standard (210X297mm: slow) η ---- ΓF — Λ loaded! (Read the precautions on the back before filling this page),-° Marry 31C445 A7 B7 5. Description of the invention (9) The heating device has a heating body provided between the first green layer and the second insulating layer on the surface side opposite to the mounting surface of the mounting member, ® Mounting table for suction function and heating function. According to the 10th of the present invention At this time, there will be provided a mounting member having an e-mounting surface for mounting the object to be processed: and an electrostatic absorbing device provided on the mounting surface of the foregoing mounting member, in order to cause the aforementioned skeleton to be adsorbed: and A heating device for heating the object to be treated; the mounting member, a base material having a green color, and an insulating layer formed on the surface of the base material, the base material on the side of the mounting surface of the mounting member, and There is a conductive layer between the green layer, based on the base material, and the insulating layer, and the conductive layer constitute the electrostatic absorbing device, the heating device has a surface provided on the opposite side of the mounting surface of the mounting member The heating body between the base material and the insulating layer on the side has a mounting table for electrostatic adsorption function and heating function. At the same time, the so-called void treatment in the present invention is intended to include all the processors with a pressure lower than normal pressure. EXAMPLES Hereinafter, an ideal form of the present invention will be described in detail with reference to the drawings. FIG. 1 is a cross-sectional view schematically showing a sheet-type cold-wall type CVD apparatus according to a first form of the present invention. The c VD Outfit 1 There is a gas-tight, slightly cylindrical processing chamber 2 with a to-be-processed body 12 (please read the precautions on the back before filling in this page).-* Employee Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs The size of the printed paper is printed using the Chinese National Standard (CNS) A4 (2! Ο X 297 mm). The A7 B7 is printed by the Consumer Service Cooperative of the Central Standardization Bureau of the Ministry of Economic Affairs. 5. The invention description (10) of the semiconductor chip W Mounting table 2 1 for use. Above the processing chamber 2, there is a hollow disc-shaped shower head 3 which is air-tight. On the upper part of the shower head 3, a treatment gas skull introduction pipe 4 is provided, while facing opposite A large number of discharge ports 5 are provided on the surface of the mounting table 21. The processing gas introduction pipe 4 is connected to a gas supply source 4a, and from the gas supply source 4a, there is a processing gas, such as Si H 4 (silane ) And the mixed gas of H 2 is discharged through the processing gas introduction pipe 4 to the hollow portion of the shower head 3 through the plurality of discharge outlets 5 to the mounting table 2 1 in the processing chamber 2 evenly. An exhaust pipe 7 leading to an exhaust device 6 such as a hollow pump is provided near the bottom of the processing chamber 2. According to the operation of the exhaust device 6, the processing chamber 2 is able to maintain a predetermined reduced pressure environment. For example, the bottom of the processing chamber 2 is formed by a bottom plate 9 supported by a support 8 that is slightly round and simple. A cooling water reserve 10 is provided inside the bottom plate 9, and the cooling water is supplied from the cooling water supply source 1 1 to the cooling water storage 1 through the cooling water pipe 1 1 a, and is not shown in the discharge pipe The cooling water in the cooling water storage place 10 is discharged, and the circulating cooling water storage place is in 10. The aforementioned mounting table 2 1 is provided on the upper surface of the bottom plate 9, and its side outer periphery is surrounded by a cylindrical partition wall 37. The mounting table 2 1 ′ is shown in FIG. 2 and FIG. 3, according to the base material 2 2 ′ and the first insulating layer 23 provided on the surface of the base material 2 2 and the first insulating layer 2 3 The thin conductors 2 4, 2 5 above, and the heater 2 6 provided directly below the first insulating layer 2 3, and if covered with the first insulation green 2 2 ′ electrode 2 4, 2 5 not paper The standard is applicable to the Chinese National Standard (CNS > A4 specification (210X297g t > (please read the precautions on the back before filling out this page)-" A7 B7 ^ 10445 V. Invention description (11) and heater 2 The second insulating layer 2 7 is formed on the outermost layer 6 7. The above-mentioned base material 2 2 has, for example, a diameter of 2 8 Omm and a slightly disc-like form with a certain thickness, such as C (carbon) or BN ( Boron nitride), etc. The first green layer 23 provided on the surface of the substrate 22 is formed by CVD treatment, for example, P-BN (pyro-boron nitride), Si〇2 ( Silicon oxide), A1N (aluminum nitride), A52〇3 (aluminum oxide), or Si N (silicon nitride) and other thin films. The above-mentioned conductors 2 4 provided on the first insulating layer 23 2 5, as shown in Figure 3 The display grounds have a slightly semi-circular shape, and DC high-voltage power supplies 28, 29 with polarities different from each other provided outside the processing chamber 2 are independently connected. According to the first insulating layer 2 3, the second insulating layer 2 7 and The electrodes 2 4 and 2 5 form a so-called bipolar electrostatic clip S. In one aspect, the above-mentioned heater 2 6 provided below the first insulating layer 23 has a strip-shaped heating element 2 6 a at appropriate intervals (Interval in the radial direction) d The heating pattern arranged in a spiral shape will generate a predetermined temperature according to the AC power supply 3 0 provided outside the above processing chamber 2, for example, 4 0 0 ° C ~ 1 2 0 0 ° C Heat at any temperature. Furthermore, it is also possible to arrange a large number of heating elements concentrically with appropriate intervals. The second green layer 2 7 covering the surfaces of these guides 2 4, 2 5 and the heater 26 above , The same as the first insulating layer 2 3, formed by CVD treatment, such as P-BN (pyro-boron nitride), 5 i 〇2 (silicon oxide), A 1 N (aluminum nitride), Α β 2 0 3 (aluminum oxide) or Si N (silicon nitride) and other thin films. The thickness (height) of the base 2 2 D 1 is set to a ratio In the above heating paper standard, the Chinese National Standard (CNS) A4 standard (210 X 2 dozen t) is applicable (please read the precautions on the back before filling out this page. · Printed by the Employees Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs ^ 10445 A7 B7 5. Description of the invention (l2) The interval d of the heating element 26a of the device 26 is large, and has a thickness of, for example, 20 to 40 mm. The mounting table 21 configured in this manner is provided on the bottom plate 9 in the processing chamber 2 as described above, and, as shown in FIG. 1, a heat transfer medium supply pipe 3 1 is provided in the center portion thereof, and The heat medium supply pipe 3 1 communicates with the flow path 3 2, and the heat medium, such as He gas, supplied from the outside of the processing chamber 2 through the above-mentioned heat medium supply pipe 3 1 is supplied to the wafer mounted on the mounting table 21 The back of W. At the same time, a temperature sensor 3 3 ° temperature sensor 3 3 is provided on the mounting table 2 1, and a detection part 3 4 ′ and a measurement part 3 5 provided in the base material 2 2 are provided. The signal of 4 is sequentially measured by the measuring part 3 5 and the signal from the measuring part 3 5 is input to the controller 3 6 ° and then the signal from the temperature sensor 3 3 is sent from the controller 3 6 to the heater 2 The output control signals such as the power supply 30 and the cooling water supply source 11 of the 6 can adjust the output of the heater 26 and the flow rate of the cooling water to control the temperature of the mounting surface of the mounting table 21 to a predetermined value. In the processing chamber 2, there is provided an elevator 4 1 for lifting or lowering the semiconductor wafer W to be processed from the stage 2 1 to the stage 2 1. The elevator 4 1 has a pair of placing members 4 2 a, 4 2 b, and a pair of driving mechanisms 4 3 a, 4 3 b for driving these placing members 4 2 a, 4 2 b, and The mounting member 4 2 a, 4 2 b is used in the drive mechanism 4 3 a, 4 3 b-for the support rod 4 4 a, 4 4 b ° Drive mechanism 4 3 a, 4 3 b * For example, a motor or This paper is composed of the Chinese National Standard (CNS) A4 specification (2! 0X297mm> (Please read the notes on the back before filling this page ~, 1 ° Printed by the Employee Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs Patent No. 15 Jiayi I + 文 文 # Main page 'Republic of China 8 Ping amended in March A7 A7 B7 V. Description of invention (13 4 ^ JL · Printed by the Employee Consumer Cooperative of the Central Bureau of Economics of the Ministry of Economic Affairs, and located in the processing room Below 2, the supports a, 4 4 b extend vertically in the annular z-space 2 b formed by the partition wall 3 7, the side of the bottom plate 9, and the side of the support 8, and the side wall 2 a of the processing chamber 2. The mounting members 42a, 42b of the elevator 41 are in a semi-ring shape suitable for the curvature of the wafer W as shown in FIG. 4, and each mounting member 42a, 42 In the inner periphery of b, arc-shaped locking portions 45a, 45b are protruded, respectively. Then, the wafer w is locked with the peripheral portions thereof in the locking portions 45a, 45b, and the mounting member 42a , 42b. Furthermore, as shown in FIG. 5, the elevator 41 may also be formed on the inner circumference of a pair of semi-annular mounting members 4 2 a, 4 2 b, and provided with several locking protrusions 46 a, 46b. Then, the support bodies 44a, 44b, as shown in FIG. 1, penetrate through an annular support plate 47 that hermetically closes the bottom of the annular space 2b, and is connected to the drive mechanisms 43a, 43b, It will move up and down according to the action of the drive mechanism. At the same time, at the penetration of the support rods 4 4 a and 4 4 b of the support plate 4 7, there are wind boxes 48 a and 48 b respectively, according to which the wind boxes 48 a and 48 b To ensure the airtightness in the processing chamber 2. On the side of the processing chamber 2 constructed as described above, there is provided an airtight loading and fixing chamber 5 2 constituted by a gate valve 51, the inside of which will be exhausted from the exhaust located at the bottom The tube 53 is evacuated, and the inside of the loading and fixing chamber 52, like the processing chamber 2 described above, becomes capable of maintaining a predetermined reduced pressure Environment, for example (please read the note and then fill in the back of this page)

本紙張尺度遑用中國《家標準（CNS > A4规格（210X297公釐〉 83. 3. 10,000 16 經濟部中央梂準局員工消費合作社印製 A 7 B7 五、發明説明（14 ) 1 0'6T〇 r r 〇 在裝載固定室5 2之內部，設有也經由閘閥鄰接的卡 匣收容室（未圖示）內之卡匣，和上述處理室2內的載置 台2 1之間使晶片W搬送的具有搬送臂5 4之搬送裝置 5 5 。 以下，說明有關如此構成的C V D裝置之動作。首先 ，將裝載固定室5 2排氣，在其中的壓力成爲和處理室2 內的壓力成爲略相同時，把閘閥51開放，將成膜處理之 晶片W根搛搬送裝置5 5的搬送臂5 4 ，搬入到處理室2 內之載置台2 1的上方。 此時，升降機4 1之載置構件4 2 a，4 2 b係已上 升，晶片W，將載置到此等各載置構件4 2 a，4 2 b的 卡止部4 5 a，4 5 b上。然後，由於施加從上述高壓直 流電源2 8 ，2 9之直流電壓到導電體2 4 ，2 5，晶片 W將根據在靜電夾S所發生的庫侖力或强生-拉別克力所 吸著保持在載置台2 1上，傳熱媒體（He氣體）將在晶 片W背面以所定之壓力（例如，1 0〜5 0 T 〇 r r )普 及0 其後，將根據保持在高溫的加熱器2 6的加熱，使晶 片W加熱至例如8 0 0 °C。同時，處理氣體將從氣體供給 源4 a經由處理氣體導入管4 ，把例如S丨Η 4 (矽烷） 和Η 2之混合氣體導入到處理室2內，開始晶片W成膜處 理。 此時，由於加熱器2 6的發熱體2 6 a之熱，將經由 (請先閎讀背面之注意事項再填寫本頁) . -βThe size of this paper is printed using China's "Family Standard (CNS> A4 Specification (210X297mm) 83. 3. 10,000 16 Printed A 7 B7 by the Employees Consumer Cooperative of the Central Bureau of Economics of the Ministry of Economy V. Description of the invention (14) 1 0 ' 6T〇rr 〇 Inside the loading and fixing chamber 52, a cassette storage chamber (not shown) that is also adjacent via a gate valve is provided, and the wafer W is placed between the mounting table 21 in the processing chamber 2 The transport device 5 5 having the transport arm 54 is transported. The operation of the CVD device thus constructed will be described below. First, the loading and fixing chamber 5 2 is exhausted, and the pressure in the chamber becomes the same as the pressure in the processing chamber 2. At the same time, the gate valve 51 is opened, and the film-processed wafer W is transferred to the transfer arm 5 4 of the transfer device 55 to the top of the mounting table 2 1 in the processing chamber 2. At this time, the lift 4 1 is placed The member 4 2 a, 4 2 b has risen, and the wafer W will be placed on the locking parts 4 5 a, 4 5 b of each of the placement members 4 2 a, 4 2 b. Then, due to The DC voltage of the above high-voltage DC power supply 2 8, 2 9 to the conductors 2 4, 2 5, the chip W will be based on static electricity The Coulomb force or Johnson-Labek force generated by S is sucked and held on the mounting table 21, and the heat transfer medium (He gas) will be on the back of the wafer W at a predetermined pressure (for example, 1 0 ~ 5 0 T 〇rr ) Popularization 0 After that, the wafer W is heated to, for example, 800 ° C. by the heating of the heater 26 maintained at a high temperature. At the same time, the processing gas will pass from the gas supply source 4 a through the processing gas introduction pipe 4 to For example, the mixed gas of S 丨 H 4 (silane) and H 2 is introduced into the processing chamber 2 and the wafer W film forming process is started. At this time, due to the heat of the heating element 2 6 a of the heater 26, it will pass (please first (Read the notes on the back and fill in this page). -Β

本紙張尺度逍用中國國家揉準（CNS )八4说格（210 X 297，公t ) - ] 7 ^10445 A7 B7 經濟部中央樣準局員工消费合作社印製 五、發明説明（15 ) 基材2 2根據接觸而直接傅達給晶片W，所以熱傳達效率 係比習知的根據輻射的傅達提高，結果，能以比習知者低 之電力把晶片W加熱至相同溫度。 而且，如上述地，基材2 2的厚度（高度）D，係設 定成比在加熱器2 6之發熱體2 6 a的間隔d大，故將沒 有形成螺旋狀之發熱髏2 6 a的圖型會影響晶片W之虞， 而能夠把晶片W均勻地加熱。因此，對晶片W，能夠實施 均勻的成膜處理。 而且因爲上述加熱器2 6係編入到載置台2 1中一體 化，故能比先前減低構件數，同時能包含全部加熱機構設 置在處理室2內。所以，裝配也容易，和上述減低構件數 相輔相成，將能降低成本。 同時形成在載置台2 1外側之第1絕緣層2 3和第2 絕緣層2 7 ，皆係由CVD處理所形成者，故其厚度皆極 均勻化，根據此點晶片W的均熱性也高。做爲其材質，使 用 P — BN，S i 〇2，A 1 N ，A 又2〇3或 S i N 等時 ，因此等之耐熱性優異，故將加熱器2 6設成直接貼上， 對熱性也無任何障害。同時，如此構成的載置台2 1 ，耐 久性也優異。 同時，做爲載置台21 ，並不限於圖2所示之構造， 只要基材2 2爲絕緣性者，也可以如圚6所示，省略第1 絕緣層2 3而在基材2 2的表面上形成第2絕緣層。做爲 如此構造之載置台2 1的例，有做爲基材2 2使用B N ’ 做爲第2絕緣層2 7使用P - B N，S i 〇 2，A 1 N， (請先閲讀背面之注意事項再填寫本茛) 裝. 订The size of this paper is printed by the Chinese National Standard (CNS) No. 8 4 (210 X 297, public t)-] 7 ^ 10445 A7 B7 Printed by the Central Consumer Council of the Ministry of Economic Affairs Employee Consumer Cooperative V. The invention description (15) The material 22 is directly transferred to the wafer W by contact, so the heat transfer efficiency is higher than that of conventional radiation by radiation, and as a result, the wafer W can be heated to the same temperature with lower power than the conventional one. Furthermore, as described above, the thickness (height) D of the base material 22 is set to be larger than the interval d of the heating element 2 6 a of the heater 26, so that the spiral heating skull 2 6a will not be formed. The pattern affects the wafer W, and the wafer W can be heated uniformly. Therefore, the wafer W can be subjected to a uniform film formation process. Furthermore, because the heater 26 is incorporated into the mounting table 21 and integrated, the number of components can be reduced compared to the previous one, and the entire heating mechanism can be installed in the processing chamber 2 at the same time. Therefore, the assembly is also easy, which complements the above-mentioned reduction in the number of components, and will reduce costs. The first insulating layer 2 3 and the second insulating layer 2 7 formed on the outside of the mounting table 2 1 are both formed by the CVD process, so their thicknesses are extremely uniform, and the thermal uniformity of the wafer W is also high according to this point . As its material, when using P — BN, S i 〇2, A 1 N, A 2 〇3 or S i N, etc., the heat resistance is excellent, so the heater 26 is set to be directly attached, There is no obstacle to heat. At the same time, the mounting table 2 1 constructed in this manner is also excellent in durability. At the same time, the mounting table 21 is not limited to the structure shown in FIG. 2, as long as the base material 2 2 is insulative, as shown in FIG. 6, the first insulating layer 23 may be omitted and the base material 2 2 may be omitted. A second insulating layer is formed on the surface. As an example of the mounting table 21 constructed in this way, BN is used as the base material 2 2 as the second insulating layer 2 7 is P-BN, S i 〇2, A 1 N, (please read the back Matters needing attention and then fill out this ranunculus) Pack. Order

V 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公*： } 18 經濟部中央橾準局員工消費合作社印製 A'7 _ B·，___ 五、發明説明（l6 )V This paper scale is applicable to the Chinese National Standard (CNS) A4 specification (210X297) *:} 18 Printed by the Central Consumer ’s Bureau of the Ministry of Economic Affairs Employee Consumer Cooperatives A'7 _ B ·, ___ V. Description of invention (l6)

Ai?2〇3或S i N者。由於使之成爲如此的構造，將使耐 久性成爲更强。 同時，爲了使晶片W之均熱性，並且能更精密地控制 溫度，也可以例如在載置台2 1內的基材2 2內，形成逋 當之冷卻媒體的循環路。 可是，上述靜電夾S，係如上述地，將根據庫侖力或 强生一拉別克力把晶片w吸著&然後，上述第1絕緣層 2 3的體稹電阻係數爲大約1 () 1 4 Ω . c m以上時將會發 生根據庫侖力之靜電吸著力，在未滿約1 0 1 4 Ω · c m時 將會發生根據强生-拉別克力的靜電吸著力。 在此，關於根據强生-拉別克力之靜爾夾，參照圖7 說明。如圖所示，在絕綠層1的表面及載置其上之半導體 晶片W的載置面，微視性地有凹凸存在，可以認爲兩者接 觸之接觸部和非接觸隨機地存在°在此當絕緣層1的體稹 電阻係數未滿1 〇14Ω . cm而不太大時’隔著該絕緣曆 1在晶片W通以電流i時，在絕綠層1和半導體晶片1之 接觸點將會因接觸電阻R c而局部地產生·大的電位降低’ 存在於其兩側之具有極小間隔的部份，將#在絕絲1體1和 晶片w之相對抗的面（形成一種電容器）貯積正負之電荷1 ，產生極高的電場，其强力之馬克士威的崎變力之結果’ 將會產生電性吸著力。如此的效果稱餺强生—拉別克效果 ，此時產生之電性吸著力稱爲强生-拉別克力。 該强生—拉別克力，係如在圖8模式性地顯示’將做 爲接觸電阻R c所引起的電位降低V /之函數而表示。 本紙張尺度適用中國國家標準（CNS ) A4C格(2丨〇X297公ΪΓΤ (請先閱讀背面之注意事項再填寫本頁 i裝' 訂 經濟部中央橾準局員工消費合作社印製 A7 _ B?_ 五、發明説明（17) 在此，設施加電壓爲v，絕緣層的體積電阻係數爲 Rs ，晶片和絕緣層之距離爲d β ，晶片和電極的距離爲 d時，上述電位降低V —將表示爲， V-=V-Rc/(RC+Rs) 而强生一拉別克力下將表示爲* F 二（1 / 8 a ) · ( V - / d ^ ) 2 圖9，係將氧化鋁鏡面加工乙試樣1 ，直接切削的試 樣2，及粗面加工之試樣3做爲絕緣層使用，由變化此等 的溫度而使體積電阻係數變化，將此時之靜電力標示的圖 表。 根據該圇可知，在體積電阻係數爲1 0 1 4 Ω · c til以 上時靜電力雖小，但在1 Q 1 1 Ω · c m以下時靜電力將會 變大。此係根據如下的理由。茌絕緣層之體稹電阻係數爲 1 014Ω · cm以上時，圖8所示以體積電阻係數Rs及 接觸電阻R c所構成的串聯電阻中，因R s將成爲支配性 所以V >之値將會變小，因此靜電力會變小。相對地，在 1 0 1 1 Ω · C m以下時R C將樊成支配性而靜電力會變大 。然後，在此等的中間領域因此等對抗，故靜電力將成中 間性之値。 通常，陶瓷等絕緣體，已知使溫度上升時其體稹電阻 係數會指數函數性地降低。例如，在c v d裝置等根據力α 熱裝置要把被處理體的半導體晶片w加熱時，絕緣體之溫 (請先閱讀背面之注意事領再填寫本頁) 裝- 訂 束紙張尺度適用中國國家標窣（CNS ) Α4規格（210Χ 297公釐） 20 經濟部中央樣準局員工消費合作社印製 ___ B7 五、發明説明（is) 度會上升而其體稹電阻係數必然會降低。因此，在如此的 根據溫度上升而體稂锾阻係數成爲1·cm以下時 ，將如圖9所示，根據强生一拉別克力之靜電力會上升， 隨之絕緣層和晶片之間的漏流也會上升，而有破壞在晶片 上所形成的半導體電路之虞。 如此地體稹電阻係數低時《爲了減少漏流只要使R c 變高即可，爲此只要使絕緣層的表面粗度變大至某程度即 可。亦即，爲了減少漏流只要使絕緣層之表面粗度變大即 可。 圖1 0 ，係做爲絕緣層使用體積電阻係數爲1 0 1 1 Ω • c m以下的S i C (厚度1 m m，表面粗度R a : 0 · 2 4及0 · 9 0 )，以圖8之狀態在常溫使施加電壓 V變化時的漏流之値予以標示者。如該圖所示，可知表面 粗度R a粗糙時漏流變小。 —方面，如圖1 1所示，可知吸著力係表面粗度小時 將會變大。 如此地，由於漏流和靜電吸著力（靜電力）爲相反者 ，故在絕緣層的體積電阻係數低時，需要使絕緣層之表面 粗度，一面具有適度的吸著力而使漏流變小之値。 具體上，在絕緣層之體積電阻係數爲1 0 6〜1 〇 12 Ω · c m時，將絕緣層的表面粗度R a在0 · 2〜3 · 1 (單位："m )之範圍調整，而能夠'一面具有適度的吸著 力而使漏流變小。 在絕緣層之體稹電阻係數未滿1 () 6 Ω * c m時，使 木紙張尺度適用中國國家橾準（CNS ) Α4規格（210 X 297公釐） ----r--.—^ I ·裝-- (請先閲讀背面之注意事項再填寫本頁)Ai? 2〇3 or S i N. By making it into such a structure, durability will become stronger. At the same time, in order to make the temperature of the wafer W uniform and to control the temperature more precisely, for example, a circulation path of a cooling medium may be formed in the substrate 22 in the mounting table 21. However, the electrostatic clip S, as described above, will attract the wafer w according to the Coulomb force or Johnson-Rabe force. Then, the resistivity of the first insulating layer 23 is about 1 () 1 4 The electrostatic attraction force according to the Coulomb force will occur above Ω. Cm, and the electrostatic attraction force according to Johnson-Rabek force will occur below approximately 1 0 1 4 Ω · cm. Here, the Jingle clip based on Johnson & Labek will be described with reference to FIG. 7. As shown in the figure, on the surface of the green layer 1 and the mounting surface of the semiconductor wafer W mounted thereon, there are irregularities on the microscopic view, and it can be considered that the contact portion and the non-contact between the two are randomly present ° Here, when the volume resistivity of the insulating layer 1 is less than 1014 Ω.cm and not too large, when the current i is applied to the wafer W through the insulating calendar 1, the contact between the green layer 1 and the semiconductor wafer 1 The point will be locally generated due to the contact resistance R c. • A large potential drop will exist on the part with extremely small gaps on both sides, and # will be on the opposing surface of the insulation 1 body 1 and the wafer w (forming a capacitor ) Accumulation of positive and negative charges 1 generates an extremely high electric field, and the result of the strong Maxwell's variable force will produce electrical attraction. Such an effect is called the Johnson-Rabek effect, and the electrical attraction generated at this time is called Johnson-Rabek. This Johnson-Rabe force is shown schematically in Fig. 8 as a function of the potential decrease V / caused by the contact resistance R c. The size of this paper is applicable to the Chinese National Standard (CNS) A4C grid (2 丨 〇X297 public ΪΓΤ (please read the precautions on the back and then fill out this page to install the 'A7 _ B? _ 5. Description of the invention (17) Here, when the applied voltage is v, the volume resistivity of the insulating layer is Rs, the distance between the wafer and the insulating layer is d β, and the distance between the wafer and the electrode is d, the above potential decreases by V — It will be expressed as V- = V-Rc / (RC + Rs) and under Johnson & Johnson Laplacian it will be expressed as * F two (1/8 a) · (V-/ d ^) 2 Figure 9, the system will oxidize Aluminum mirror processing sample B, directly cut sample 2, and rough surface processed sample 3 are used as insulating layers. By changing these temperatures, the volume resistivity changes, and the electrostatic force at this time is marked as According to the graph, the electrostatic force is small when the volume resistivity is more than 1 0 1 4 Ω · c til, but the electrostatic force will become larger when it is less than 1 Q 1 1 Ω · cm. This is based on the following Reason: When the volume resistivity of the insulating layer is 1 014Ω · cm or more, the volume resistivity Rs and In the series resistance formed by the contact resistance R c, the value of V > will become smaller due to the dominance of R s, and therefore the electrostatic force will become smaller. In contrast, when it is less than 1 0 1 1 Ω · C m The RC will dominate the fan and the electrostatic force will increase. Then, in these intermediate areas, the electrostatic force will be opposed, so the electrostatic force will become an intermediate value. In general, insulators such as ceramics are known to increase their temperature when the temperature rises. The coefficient of resistance will decrease exponentially. For example, when a thermal device such as a cvd device is to heat the semiconductor wafer w of the object to be processed according to the force α, the temperature of the insulator (please read the notice on the back before filling in this page) -The size of the bundled paper is applicable to the Chinese National Standard (CNS) Α4 specification (210Χ 297 mm). 20 Printed by the Employee Consumer Cooperative of the Central Prototype Bureau of the Ministry of Economic Affairs. The resistance coefficient will inevitably decrease. Therefore, when the body resistance coefficient becomes 1 · cm or less according to the temperature rise, as shown in FIG. 9, the electrostatic force according to Johnson-Labeli will increase, and the insulation layer And leakage May rise, and there is a risk of damaging the semiconductor circuit formed on the wafer. In this way, when the resistivity of the volume is low, "In order to reduce the leakage current, it is only necessary to increase the R c, so for this reason, the surface roughness of the insulating layer needs to be changed. It can be as large as possible. That is, in order to reduce leakage, it is only necessary to increase the surface roughness of the insulating layer. Figure 10 is used as an insulating layer with a volume resistivity of 1 0 1 1 Ω • cm or less S i C (thickness 1 mm, surface roughness R a: 0 · 2 4 and 0 · 9 0), the value of the leakage current when the applied voltage V is changed at normal temperature in the state shown in FIG. 8. As shown in this figure, it can be seen that when the surface roughness Ra is rough, the leakage current becomes small. On the one hand, as shown in Fig. 11, it can be seen that the surface roughness of the suction system will increase when the surface roughness is small. In this way, the leakage current and the electrostatic attraction force (electrostatic force) are opposite, so when the volume resistivity of the insulating layer is low, the surface thickness of the insulating layer needs to be roughened, while having an appropriate attraction force to reduce the leakage current The value. Specifically, when the volume resistivity of the insulating layer is 1 0 6 ~ 1 〇12 Ω · cm, the surface roughness Ra of the insulating layer is adjusted within the range of 0 · 2 ~ 3 · 1 (unit: " m) And, it can have a moderate suction force and make the leakage less. When the resistivity of the insulating layer is less than 1 () 6 Ω * cm, make the wooden paper scale applicable to China National Standard (CNS) Α4 specification (210 X 297 mm) ---- r --.-- ^ I · outfit-(please read the notes on the back before filling this page)

、tT Μ ^ί〇445 Α7 Β7 經濟部中央揉準局負工消費合作社印製 五、 發明説明（19 ) 表 面 粗 糙 度 成 爲 上 述 範 園 也 不 能 把 漏 流 充 份 地 變 小 * 在 超 過 1 0 1 2 Ω 參 C m 時 因 漏 m 的 影 響 小 所 以 也 不 必 考 慮 〇 更 有 效 者 » 爲 體 積 电 阻 係 數 爲 1 0 1 α 1 0 1 1 Ω • C m 之 情 況 〇 絕 緣 層 的 表 面 粗 糙 度 R a 未 滿 0 • 2 時 將 dac 挑 法 有 效 地 減 低 漏 流 而 R a 超 ς-JuEL 遇 3 1 時 靜 電 吸 著 力 將 會 、'思 過 小 〇 理 想 之 表 面 粗 糙 度 R a 爲 0 8 1 0 〇 再 者 1 如 此 的 條 件 設 定 係 在 絕 緣 層 加 熱 而 其 體 m 阻 係 數 成 爲 上 述 範 圍 時 在 jur.fr m 溫 將 驢 爾 檟 電 阻 係 數 爲 上 述 範 圍 之 材 質 做 爲 絕 緣 層 使 用 時 也 能 適 用 〇 做 爲 此 時 的 絕 緣 層 之 .材 料 能 夠 使 用 前 述 的 P B N Ν » S ί 0 2 A N > A 2 〇 3 S i N 等 並 且 體 積 電 阻 係 數 比 此 等 低 之 S i C 也 可 以 使 用 〇 以 下 關 於 本 發 明 的 第 2 形 態 說 明 〇 有 關 該 形 態 之 C V D 裝 置 除 了 載 置 台 以 外 係 構 成 和 第 1 形 態 略 同 〇 圖 1 2 係 顯 示 在 該 形 態 所 使 用 的 載 軍 台 之 截 面 圆 圃 〇 載 置 台 6 0 f 係 由 例 如 氮 化 硼 ( B N ) 所 稱 成 在 上 面 形 成 有 載 置 做 爲 被 處 理 體 的 半 導 SUh 體 晶 片 W 用 之 載 置 面 6 0 A 〇 雖 未 圖 示 但 在 載 置 面 6 0 A 將 配 置 和 第 1 形 態 相 同 的 靜 電 夾 據 此 把 半 導 體 晶 片 W 靜 電 性 地 吸 著 保 持 〇 — 方 面 > 在 載 置 台 6 0 之 下 面 設 有 從 其 外 周 緣 向 下 方 突 出 的 環 狀 ί 腳 部 6 0 B 如 以 該 腳 部 6 0 B 圍 繞 地 形 成 空 間 6 0 C 0 然 後 腳 部 6 0 B 的 下 面 載 置 在 位 於 下 方 本紙張尺度逋用中國國家標率（CNS ) Α4規格（210X297公t > 83. 3. !〇,〇〇〇 A7 B7 經濟部中央樣準局®C工消費合作祍印聚 五、發明説明（2〇 ) 之和第1形態的裝置相同地構成之底板9上。以該底板9 和腳部6 Ο B所圍繞的空間6 0 C，係成爲將根據未圖示 之排氣機構維持成眞空狀態。因此，載置台6 0和底板9 接觸的領域，當然比載置台6 0之下面全部接觸在下部載 置台爲示。 在上述載置台6 0的下面將設置中央加熱體6 4 ，在 其外側部設有側部加熱體6 6。 中央加熱體6 4及側部加熱體6 6 ，係以導電性之發 熱電阻體所構成。然後，中央加熱體6 4 *係在載置台 6 0下面的和載置面6〔）A對向之部份，亦即，在空洞部 6 0的頂面，以能夠把半導體晶片w經全面加熱之大小設 置。同時，側部加熱體6 6 ，係設在載置台6 0的上面中 相當於載置面6 Ο A之周邊的領域及載置台6 〇之側面。 因此，載置台6 0，係在其表面的載置面f] 〇 a以外之領 域的略全部設有加熱源。 再者，圖中係在腳部6 Ο B內側也設有加熱體，但是 ，此部份不一定要設置加熱體。此係，因爲空間6 〇 C內 係維持眞空狀態，成爲所謂眞空隔熱狀態，故對內側之散 熱不多所致。因此，做爲設在腳部6 Ο B的加熱源所必要 者’係從載置台6 Q之放熱顯著的外側面。同時，在載置 台6 0上面之載置面6 Ο A以外的領域，以設有加熱體 6 6爲理想。 根據如此之構成時，被處理體的半導體晶片W之加熱 ，主要將由位於載置台6 0下面的中央加熱源6 4所進行 (請先閣讀背面之注意事項再填离本頁) 裝·， TT Μ ^ ί〇445 Α7 Β7 Printed by the Ministry of Economic Affairs, Central Bureau of Accreditation and Consumer Labor Cooperative V. Description of the invention (19) The surface roughness becomes the above-mentioned fan garden, and the leakage cannot be fully reduced * more than 1 0 1 2 Ω when participating in C m, the influence of leakage m is small, so there is no need to consider it. The more effective one is the case where the volume resistivity is 1 0 1 α 1 0 1 1 Ω • C m. The surface roughness of the insulating layer R a When it is less than 0 • 2 will use the dac pick method to effectively reduce leakage and Ra a-Juel will meet 3 1 when the electrostatic attraction force will be, 'Think too small. The ideal surface roughness R a is 0 8 1 0 〇 The condition setting is such that when the insulation layer is heated and its body m resistance coefficient is in the above range, it can also be applied when jur.fr m temperature uses the material with the resistance coefficient of the donkey sill in the above range as the insulation layer. The insulating layer at this time. The material can The aforementioned PBN Ν »S ί 0 2 AN > A 2 〇3 S i N and the like and the volume resistivity lower than these S i C can also be used. The following description of the second form of the present invention 〇 About this form The structure of the CVD apparatus is the same as the first form except for the mounting table. Figure 1 2 shows the cross section of the military platform used in this form. The mounting table 6 0 f is made of boron nitride (BN), for example. It is said that the mounting surface 6 0 A for forming the semiconducting SUh body wafer W on which the object to be processed is formed is formed on the mounting surface 6 0 A. The same static electricity as the first form is placed on the mounting surface 6 0 A According to this, the semiconductor wafer W is electrostatically attracted and held by the clip. Aspect> Under the mounting table 6 0, a ring-shaped foot portion 6 0 B protruding downward from its outer peripheral edge is provided. If the foot portion 6 0 B Surround the terrain The space 6 0 C 0 and then the lower part of the foot 6 0 B is placed below it. The paper scale uses the Chinese National Standard Rate (CNS) Α4 specification (210X297 g t> 83. 3.! 〇, 〇〇〇A7 B7 Ministry of Economic Affairs, Central Bureau of Standards®C, Industry and Consumer Cooperation, Yi Yinju V. Description of Invention (2〇) The bottom plate 9 is constructed in the same way as the device of the first form. The space 6 0 C surrounded by the bottom plate 9 and the foot 6 Ο B is to maintain the exhaust mechanism according to an unillustrated state in a vacant state. Therefore, the area where the mounting table 60 and the bottom plate 9 are in contact is, of course, shown below that the lower surface of the mounting table 60 is all in contact with the lower mounting table. A central heating body 6 4 is provided below the placing table 60, and a side heating body 6 6 is provided on the outer side. The central heating body 64 and the side heating body 6 6 are made of conductive heating resistors. Then, the central heating body 6 4 * is the portion opposite the mounting surface 6 0 and the mounting surface 6 [) A, that is, on the top surface of the cavity portion 60, so that the semiconductor wafer w can be Heating size setting. At the same time, the side heating element 6 6 is provided on the upper surface of the mounting table 60 corresponding to the area around the mounting surface 6 OA and the side surface of the mounting table 60. Therefore, the mounting table 60 is provided with a heating source in almost all areas other than the mounting surface f] 〇a on the surface. In addition, in the figure, there is also a heating body on the inner side of the foot 6 OB, but it is not necessary to install a heating body in this part. In this system, since the space 60 ° C maintains the vacant state and becomes the so-called vacant thermal insulation state, there is not much heat dissipation to the inside. Therefore, what is necessary as a heating source provided at the foot 6 OB is from the outer side where the heat release from the mounting table 6 Q is remarkable. At the same time, in areas other than the mounting surface 6 Ο A above the mounting table 60, it is desirable to provide a heating body 6 6. According to such a configuration, the heating of the semiconductor wafer W of the object to be processed will be mainly performed by the central heating source 6 4 located under the mounting table 60 (please read the precautions on the back before filling out this page).

'1T 綉 木紙張尺度適用中國國家輮準（CNS ) A4規格< 2丨0X297公釐 23 經濟部中央搮準局員工消费合作社印裝 A7 __ B? _ 五、發明説明（21 ) 。此時，由於晶片W將隔著載®台所加熱，所以實質上將 能防止加熱體之加熱圖型會出现在晶片的載置面6 Ο A。 因此，加熱體之加熱圖型將不會轉印到做爲被處理體之晶 片的背面。而且，載置台6 0之外周綠，將由側部加熱體 6 6所加熱，所謂，將進行熱的補充，故能抑制散熱，在 載置台6 0之表面將保持溫度分佈的均勻性。 —方面，在載置台6 0之下面設有腳部6 Ο B，在其 外側面或內側面有加熱體，故能減少接觸的傳熱部而抑制 由俥熱之熱損失，而且，由於腳部6 Ο B具有一定的長度 ，故將防止熱保有置急激地減低。據此，將能防止在載置 面之溫度分佈的變化。 亦即，比在腳部6 Ο B之到散熱部的距離短之情況， 由於使之到散熱位置爲止的距離加長，且補充到其位置爲 止之散熱量地予以加熱，將能使到散熱位置的溫度降低， 換言之，能使溫度斜度變成緩和°因此，能夠使對載置面 的散熱之影響變小，減少在載置面的溫度分佈之變化。而 且，由於減緩如此的溫度變化，也能去除溫度之遽變部而 防止機器的熱性破損。 話說，在載置台6 Q ，如圓1 3A所示地設有對加熱 體之通電控制用的溫度察覺器6 8。圖！ 3 a，係顯示上 述溫度察覺器中之設在載置台6 0的中央部者之安裝狀態 的模式圖，在同圖中，溫度察覺器6 8 ，係成爲例如在石 英管內配置熱電偶之構造。如此的溫度察覺器6 8 ，係如 後述地也配置在載置台6 Q之中心部以外的位置。在載置 太紙張尺度適用中國國家標準（CNS) A4规格（2丨〇:<297公嫠i — (請先閱讀背面之注意事項再填寫本炅) 裝· 訂 - 3^C445 經濟部中央標準局員工消費合作社印製 A 7 B7五、發明説明（22 ) 台6 0之溫度察覺器6 8的安裝部份，如從其下面突出地 形有简部6 OD，溫度察覺器6 8之頭部將插入在該筒部 6 OD，而支持溫度察覺器6 8。 通常，溫度察覺器6 8 ，係如圖1 3Β所示，以使頭 部接近載置面6 0 Α的狀態插入，但是，根據如此之安裝 構造時，在載置面6 Ο A的熱，將根據溫度察覺器6 8之 傳熱而容易散熱。因此，在載置面6 0 A的面內，將由於 溫度察覺器所位置之處的溫度會降低，而使在面內之溫度 分佈會變化。而且，也將成爲溫度察覺器本身也成爲在頭 部的溫度將和載置面不同，而變成無法正確地檢知溫度。 因此，在本例，係由於在支持溫度察覺器6 8的頭部之位 置設置筒部6 0 D，成爲根據筒部6 0 D供給能補充由傅 熱的散熱量之熱量。因此，將由茼部6 0 D使之具有支持 溫度察覺器6 8的頭部之做爲支持器的機能，同時能夠由 補充因溫度察覺器6 8之傳熱的熱損失，而防止在載置面 之熱被奪取。因此，將會防止在載置面6 OA的溫度分佈 之變化，同時能夠防止由溫度察覺器本身的溫度降低所引 起之載置面溫度和檢出溫度之間發生誤差ςι 溫度察覺器6 8 ，雖然沿著晶片W的闺方向設置多數 處，在監視被處理體全域之溫度上比較理想，但是，爲了 防止由於在溫度察覺器6 8因熱傳導而使載置台6 〇的載 置面6 Ο Α之溫度分佈變化，使之成爲必要最小限之數， 例如，在後述的圖1 4所示’成馬晶片W之中央部和外周 緣附近的2處爲理想。 (請先閲讀背面之注意事項再填鸾本頁) "裝 訂 夂紙張尺度逋用中國國家梯準（〔’奶）戌4规格（2丨0/297公釐） A7 B7 經濟部中央橾準局負工消費合作社印製 五、 發明説明（23 ) 1 I 同 時 ，也 可 以 和 圖 1 4 r 1 5 所 示 如 覆 蓋 載 置 台 1 1 6 0 之 載 PgJ- ,'J ' t 置面 6 0 A 以 外 的 上 面 地 1 且 以 不 接 tm m 加 熱 源 1 1 6 6 之 狀 態而 接 近 載 置 台 6 0 地 配 置 緩 衝 板 7 0 0 該 緩 衝 1 I 請 1 I 板 7 0 » 係成 盤 狀 9 例 如 » 內 側 部 以 石 英 或 S i C 所 形 成 先 閱 1 I 讀 1 * 外 側 部 由其 他 的 陶 瓷 所 形 成 ) 在 外 側 部 9 如 園 1 5 所 示 背 面 1 I 9 形 成 有 向厚 度 方 向 貫 穿 的 多 數 之 排 氣 □ 7 1 ο 該 排 氣 P 之 注 意 1 1 | 7 1 將 ^J3L 通迥 從 蓮 蓬 頭 3 的 氣 體 吹 出 □ 5 所 吐 出 之 處 理 氣 事 項 再 1 1 I 體 0 因 此 ，該 排 氣 □ 愈 位 於 連 接 排 氣 管 7 —. 側 * Π 徑 將 構 1' 本 | 成 爲 小 者 ，由 此 將 能 在 四 周 方 向 形 成 均 勻 地 來 進 行 處 理 氣 Ά 1 1 體 的 回 收 0 1 1 在 由 如 此構 成 所 成 之 C V D 裝 -Η- 以 使 對 半 導 體 晶 片 W 1 I 的 成 膜 厚 度成 爲 均 勻 之 目 的 而 進 行 加 熱 體 之 溫 度 控 制 0 換 1 訂 | 言 之 根 據補 充 載 台 6 0 在 四 周 部 比 中 央 部 之 散 熱 量 較 1 1 I 多 的 熱 量 而將 載 置 台 6 0 維 持 均 勻 之 溫 度 以 使 成 膜 厚 度 1 1 成 爲 均 匀 者。 因 此 上 述 中 央 加 熱 脑 6 4 和 側 部 加 熱 體 6 1 1 6 將 分 別連 接 在 各 別 的 電 源 JS& 路 > 而 獨 立 地 控 制 〇 亦 即 » 在 中 央 加熱 m* 腰 6 4 及 側 部 加 熱 SfOi 體 6 6 1 係 Γ 連 接 有 從 未 示 1 I 之 電 源 的 電路 > 如 nan _ 1 6 所 示 將 根 據 閘 流 體 相 位 控 制 部 1 1 | 8 0 控 制 加熱 JH. 里 0 閘 流 體 相 位 控 制 部 8 0 » 將 根 據 從 溫 度 1 1 察 BBL 3C 器 1 8的 關 於 溫 度 資 訊 之 輸 入 信 號 進 行 對 各 加 熱 腰 6 4 6 6 的通 電 控 制 把 載 台 6 0 維 持 锻 均 勻 之 溫 度 〇 1 1 同 時 ，如 此 的 溫 度 控 制 » 也 以 使 在 直 徑 方 向 之 處 理 氣 1 腰 的 流 速 所影 響 之 成 膜 率 均 勻 化 爲 目 的 而 實 施 〇 1 I 亦 即 ，已 由 實 驗 等 確 認 處 理 氣 體 之 流 速 在 半 導 1¾% 體 晶 片 1 1 1 本紙張尺度遑用中國國家梯率（CNS ) A4规格（210X2耵公* ) 83. 3.10,000 26 經濟部中央標準局貝工消費合作社印製 83. 3. 10,000 A7 B7 — "" ...... 五、發明説明（24 ) w的徑方向外周側會變快，據此，無法使處壤氣 在徑向成爲均勻。因此’爲了使受到和處理氧體的接觸時 間所影響之成膜厚度在徑方向成爲均勻，以根 速作用的在載置台之溫度斜度，使在半導體晶片W@B(^ 之流速成爲一定，而使處理氣體和被處理體的接觸時間„ 定化爲理想。 再者，也可以如圖1 7所示，在有關第1形態之裝置 的載置台適用在該形態之側部加熱體3 6。據此， 更提高載置台的溫度之均勻性。 以下，關於第3形態說明。 圖1 8係把有關該形態的頁紙式CVD裝置模式性地 顯示之截面圖。該頁紙式CVD裝置1 0 0，具有構成氣 密的略圓筒狀之處理室1 0 5 ，在其中設有爲了載置被處 理體的半導體晶片W用之載置台1 〇 9。 在該處理室1 0 5的上面，有成中空之盤狀的蓮蓬頭 1 0 2設成氣密。在該蓮蓬頭1 〇 2之上部設有處理氣體 導入管1 0 6，從處理氣體源1 〇 7經質量流控制器 1 0 8，能把所定的處理氣體如S i H2和H2之混合氣體 導入到上述蓮蓬頭1 〇 2的中空部》 同時在上述蓮蓬頭1 〇 2之下面，即和載置台1 〇 9 之對向面設有設置多數氣體吹出孔1 〇 4的多孔板1 〇 3 ，從處理氣體導入管1 〇 6所導入之處理氣體，將從蓮蓬 頭1 0 2的中空部通過氣體吹出孔1〇 4 .均等地向處理 室1 0 5內之載置台1 〇 9吐出。 本^張尺度逋用中國國家標準（€阳）八4规格（210><297公釐) (請先閲讀背面之注意事項再填寫本頁) 訂· 線- -27 - A 7 經濟部中央揉準局員工消費合作杜印製'1T embroidered wood paper scale is applicable to China National Standard (CNS) A4 specification < 2 丨 0X297mm 23 Printed by the Central Consumers Bureau of the Ministry of Economic Affairs Employee Consumer Cooperative A7 __ B? _ V. Description of invention (21). At this time, since the wafer W will be heated across the stage, it will substantially prevent the heating pattern of the heating body from appearing on the wafer mounting surface 6 Ο A. Therefore, the heating pattern of the heating body will not be transferred to the back of the wafer as the object to be processed. In addition, the outer periphery of the mounting table 60 is green, and will be heated by the side heating body 66, so-called heat supplement will be performed, so that heat dissipation is suppressed, and the temperature distribution uniformity is maintained on the surface of the mounting table 60. -In the aspect, the foot 6 Ο B is provided under the mounting table 60, and the heating body is provided on the outer side or the inner side, so it can reduce the contact heat transfer part and suppress the heat loss due to the heat, and, due to the foot Part 6 Ο B has a certain length, so it will prevent the heat retention from decreasing sharply. According to this, it is possible to prevent the temperature distribution on the mounting surface from changing. That is, if the distance from the foot 6 Ο B to the heat dissipation part is shorter, the distance to the heat dissipation position is increased, and the heat dissipation up to the position is heated to supplement the heat dissipation position. The lowering of the temperature, in other words, can make the temperature gradient become gentle. Therefore, the influence on the heat dissipation of the mounting surface can be reduced, and the change of the temperature distribution on the mounting surface can be reduced. Moreover, by slowing down such temperature changes, the temperature change part can also be removed to prevent thermal damage to the machine. In other words, a temperature sensor 68 for controlling the energization of the heating body is provided on the mounting table 6 Q as indicated by circle 13A. Figure! 3 a is a schematic diagram showing the installation state of the temperature sensor in the central part of the mounting table 60. In the same figure, the temperature sensor 6 8 is, for example, a thermocouple arranged in a quartz tube. structure. Such a temperature sensor 6 8 is also arranged at a position other than the center of the mounting table 6 Q as described later. The Chinese National Standard (CNS) A4 standard is applied to the size of the mounted paper (2 丨 〇: < 297 公 嫠 i — (please read the precautions on the back and then fill out the grate). Installation and ordering-3 ^ C445 Central Ministry of Economic Affairs Printed by the Bureau of Standards and Staff's Consumer Cooperatives A 7 B7 V. Description of invention (22) The installation part of the temperature sensor 6 8 of the station 60, if there is a simple part 6 OD protruding from below, the head of the temperature sensor 6 8 The part will be inserted into the barrel part 6 OD and support the temperature sensor 68. Normally, the temperature sensor 6 8 is inserted as shown in FIG. 1 3B so that the head is close to the mounting surface 6 0 Α, but According to this installation structure, the heat on the mounting surface 6 Ο A will be easily dissipated according to the heat transfer of the temperature sensor 68. Therefore, in the surface of the mounting surface 60 A, the temperature sensor will The temperature at the location will decrease, and the temperature distribution in the surface will change. Moreover, it will also become the temperature sensor itself and the temperature at the head will be different from the mounting surface, and it will become impossible to detect correctly Temperature. Therefore, in this case, it is due to the support of the head of the temperature sensor 6 8 The position of the barrel portion 6 0 D is based on the supply of heat that can supplement the heat dissipation by the heat according to the barrel portion 60 D. Therefore, the head of the temperature portion 6 8 is supported by the crown portion 6 0 D as The function of the supporter can also compensate for the heat loss due to the heat transfer of the temperature sensor 6 8 to prevent the heat on the mounting surface from being taken away. Therefore, it will prevent the temperature distribution on the mounting surface 6 OA from changing, At the same time, it is possible to prevent an error between the mounting surface temperature and the detected temperature caused by the temperature drop of the temperature sensor itself. The temperature sensor 6 8 is provided in many places along the direction of the wafer W to monitor the object to be processed. The temperature in the whole range is ideal. However, in order to prevent the temperature distribution of the mounting surface 6 Ο Α of the mounting table 6 〇 from being changed by the temperature sensor 68 due to heat conduction, it becomes the necessary minimum number, for example, in As shown in Fig. 14 described later, the two parts near the central part and the outer periphery of the adult wafer W are ideal. (Please read the precautions on the back side before filling in the Luan page) " The paper size of the binding paper uses the Chinese National Ladder quasi(〔' ） 戌 4 specifications (2 丨 0 / 297mm) A7 B7 Printed by the Central Ministry of Economic Affairs Bureau of the Negative Work Consumer Cooperative V. Description of the invention (23) 1 I At the same time, it can also be as shown in Figure 1 4 r 1 5 Cover the load PgJ- of the mounting table 1 1 6 0, 'J' t is placed on the upper ground 1 other than the surface 6 0 A, and the buffer plate is arranged close to the mounting table 6 0 without connecting the tm m heating source 1 1 6 6 7 0 0 The buffer 1 I please 1 I board 7 0 »tied into a disc 9 For example» The inner part is made of quartz or S i C 1st read 1 I read 1 * The outer part is made of other ceramics) On the outer part 9 As shown on the back of the garden 1 5 1 I 9 There is a large amount of exhaust gas that penetrates in the thickness direction □ 7 1 ο Attention of this exhaust gas P 1 1 | 7 1 Blowing out the gas from the shower head 3 through ^ J3L □ 5 Matters of the treated gas that are spit out are then 1 1 I body 0 Therefore, the exhaust gas □ is located at the connection to the exhaust pipe 7 —. Side * The diameter will be configured 1 'This | becomes a small person, so that the process gas Ά 1 1 can be recovered uniformly in the circumferential direction. 0 1 1 The CVD device composed of such a structure -Η- is used to make the semiconductor wafer W 1 The film thickness of I becomes uniform for temperature control of the heating body. 0 Change 1 order | In other words, the mounting table 6 is based on the amount of heat dissipated by the supplementary stage 6 0 in the peripheral part compared to the central part 1 1 I 0 Maintain a uniform temperature so that the film thickness 1 1 becomes uniform. Therefore, the central heating brain 6 4 and the side heating bodies 6 1 1 6 will be connected to separate power sources JS & Road> and independently controlled. That is, »heating in the center m * waist 6 4 and side heating SfOi Body 6 6 1 is a circuit connected to a power source that is not shown in 1 I> As shown in nan _ 1 6, the heating will be controlled according to the thyristor phase control unit 1 1 | 8 0. 里 0 The thyristor phase control unit 8 0 »The energization control of each heating waist 6 4 6 6 will be carried out based on the input signal of temperature information from the temperature 1 1 and the BBL 3C device 1 8 to maintain the uniform temperature of the forging platform 6 0 1 1 At the same time, such Temperature control »It is also implemented for the purpose of making the film formation rate affected by the flow rate of the processing gas in the diameter direction 1 waist uniform. Ii, it has been confirmed by experiments that the flow rate of the processing gas is in the semiconducting 1¾% bulk wafer 1 1 1 This paper scale does not use China's national rate CNS) A4 specification (210X2 Kuo Gong *) 83. 3.10,000 26 Printed by the Beigong Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs 83. 3. 10,000 A7 B7 — " " ... V. Description of invention ( 24) The radial outer side of w becomes faster, and therefore, the soil gas cannot be made uniform in the radial direction. Therefore, in order to make the thickness of the film formation affected by the contact time with the processing oxygen body uniform in the radial direction, the temperature gradient on the stage acting at the root speed makes the flow rate of the semiconductor wafer W @ B (^ constant The contact time between the processing gas and the object to be processed is idealized. Furthermore, as shown in FIG. 17, the mounting stage of the device according to the first aspect may be applied to the side heating element 3 of the aspect 6. Based on this, the temperature uniformity of the mounting table is further improved. The following describes the third form. FIG. 18 is a cross-sectional view schematically showing a sheet-type CVD apparatus of this form. The sheet-type CVD The apparatus 100 has an airtight, slightly cylindrical processing chamber 1 0 5, and a mounting table 1 09 for mounting semiconductor wafers W to be processed is provided therein. In this processing chamber 10 5 On the upper side, a hollow disk-shaped shower head 102 is set to be airtight. Above the shower head 102 is a processing gas introduction pipe 106, which passes from the processing gas source 107 to the mass flow controller 1. 0 8, can be the specified processing gas such as S i H2 and H2 mixed gas Introduced into the hollow part of the shower head 1 〇2 At the same time, under the shower head 1 〇2, that is, the opposite surface of the mounting table 1 〇9 is provided with a plurality of gas blowing holes 1 〇4 porous plate 1 〇3, from The processing gas introduced into the processing gas introduction pipe 106 will be discharged from the hollow portion of the shower head 102 through the gas blowing hole 100.4 evenly to the mounting table 109 in the processing chamber 105. This page The standard is based on the Chinese National Standard (€ yang) 84 specifications (210 > < 297mm) (please read the precautions on the back before filling in this page) Order · Line--27-A 7 Central Bureau of Economic Development of the Ministry of Economic Affairs Employee consumption cooperation du printing

五、 發明説明 (25) 1 1 在 上 述 處 理 室 1 0 5 的 底 部 附 近 9 設 有 通 到 眞 空 泵 等 1 1 之 排 氣 裝 置 1 1 0 的 排 氣 管 1 1 1 由 於 使 排 氣 U4r 裝 置 1 1 1 1 0 動 作 » 而 成 爲 能 將 上 述 處 理 室 1 0 5 保 持 成 所 定 之 1 I 請 1 減 壓 •ma 頌 境 ) 例 如 1 0 -6 T 〇 r r G 先 閲 1 I 上 述 處 理 室 1 0 5 的 底 部 係 由 略 圆 筒 狀 之 支 持 — 麗 讀 背 面 1 1 1 1 2 支 持 的 底板 1 1 3 所 構 成 並 且 在 該 底 板 1 1 3 之 之 注 意 1 1 內 部 設 有 冷 卻 水 儲 留 處 1 1 4 冷 卻 水 將 從 冷 媒 源 1 1 5 事 項 I 再 1 經 過 管 1 4 0 供 給 到 該 冷 卻 水 儲 留 處. 1 1 4 從 未 圖 示 的 填 % 本 裝 排 出 管 排 出 > 而 循 環 冷 卻 水 儲 留 1 1 4 內 0 頁 1 I 並 且 在 上 述 底 板 1 1 3 上 til 隔 荖 隔 熱 材 1 1 5 設 有 載 1 I 置 台 1 0 9 0 在 該 載 置 α 1 0 9 形 成 -1^— 有 對 載 置 的 被 處 理 1 1 I 體 W 之 背 面 供 給 傳 熱 媒 體 用 的 供 給 路 1 5 0 > 在 該 供 給 路 1 訂 1 5 0 > 將 從 例 如 傳 熱 媒 體 Η e 源 1 5 1 供 給 Η e 0 1 1 通 過 該 傳 熱 媒 體 供 袷 管 1 5 0 供 給 到 半 導 體 晶 片 W 之 1 1 背 面 的 傅 熱 媒 體 之 供 給 量 將 根 據 從 後 述 的 控 制 器 1 1 9 1 1 之 控 制 信 號 調 整 閥 1 4 2 的 開 度 而 控 制 0 | 同 時 9 在 上 述 載 置 1 0 9 部 有 第 1 9 第 2 及 第 3 I 1 加 熱 體 1 1 6 9 1 1 7 > 1 1 8 配 設 成 略 同 心 園 狀 〇 此 等 1 1 加 熱 體 1 1 6 1 1 7 > 1 1 8 係 分 別 經 由 固 體 繼 電 器 ( 1 S S R ) 所 成 的 開 關 1 2 0 9 1 2 1 1 2 2 連 接 在 電 源 1 | 1 3 0 1 3 1 1 3 2 ， 根 據 從 此 等 電 源 給 電 而 發 熱 0 1 I 然 後 » 根 據 從 控 制 器 1 1 9 之 控 制 信 號 使 對 應 於 此 等 加 1 I 熱 體 1 1 6 1 1 7 ， 1 1 8 的 固 體 繼 電 器 ( S S R ) 1 1 1 2 0 > 1 2 1 * 1 2 2 閉 合 斷 開 控 制 ♦ 據 此 將 能 獨 立 控 1 1 I 冬紙張尺度適用中國國家梯準（CNS M4規格（210X297公釐） 28 A7 3:10445 ____B7 五、發明説明（26 ) 制此等加熱體。再者，圖示之例，雖採用將3個加熱體 1 1 6 ，1 1 7 ，1 1 8配置成略同心圖狀的構成，但是 (請先聞讀背面之注意事項再填寫本頁) 並不限於如此之構成，而能把任意數的加熱體以任意之設 計實裝在載置台，將載置台表面的多數之所希望的領域以 所希望之溫度各別獨立地構成能夠加熱保溫。 同時，載置台1 〇 9 ，係如圖1 9所示，形成有對應 於各加熱體1 1 6 ，1 1 7 ，1 1 8的略同心園狀之3個 加熱領域1 2 3，1 2 4 ，1 2 5 ，在此等加熱領域分別 設有溫度察覺器1 5 2 ，1 5 3 ，1 5 4。從此等溫度察 覺器1 5 2 ，1 5 3 ，1 5 4的檢出信號將輸入到上述控 制器1 1 9 ，根據胲檢出信號，將從控制器1 1 9反饑控 制供給到傅熱媒體供給管1 5 ()的傳熱媒體之供給量及上 述各加熱體1 1 6 ，1 1 7，1 ] 8的輸出。 由於如此地構成，將能夠把載置面1 0 9之溫度控制 以上述略同心圊狀的3個領域1 2 3 * 1 2 4 ，1 2 5分 經濟部中央橾準局員工消費合作社印製 別獨立地進行，在此等3個領域設定成不同之溫度。然後 ，吸著保持在其載置面的半導體晶片W，因載置台1 0 6 之熱將從其背面由傳熱供給，故其溫度分佈將成爲對應於 載置台1 0 9的3個領域者，在晶片W將形成略同心圆狀 地對應於領域1 2 3，1 2 4，1 2 5之3個領域1 2 6 * 1 2 7 * 1 2 8 ° 結果，將能把處理氣體的濃度境界層之厚度薄的半導 體晶片周園之領域1 2 8的溫度設定成比其濃度塊界屠之 厚度的半導體晶片中央之領域1 2 6低溫，雖有澳度境界 本紙张尺度通用中國國家標準（CNS ) A4規格{Ιϋχ 297公t ) ~~ .,()— B7 五、發明説明（27 ) 層分佈的存在，將能設法使成膜率均勻化β 以下說明其理由。 在如圖18所示之頁紙式CVD裝置1 ，經由穿設在 蓮蓬頭1 0 2底面的多孔板1 0 3之孔1 0 4，在處理室 1 0 5內把所定的處理氣體，例如S i Η 4等以均勻之流 量導入時，處理氣體將顯示以箭頭記號所示的氣流’半導 體晶片W上之處理氣體的流速U將成爲晶片之半徑r的函 數，如圖2 0所示，顯示愈向外周流速將愈快之分佈。此 時，對成膜物質的移動量有很大關係之處理氣體之濃度境 界層的厚度<5因係處理氣體之流速u的函數，故該濃度境 界層之厚度對半導體晶片表面的分佈，將如圖2 1所示* 愈在中央愈厚，而愈向端部變成愈薄，結果，溫度將從中 央部愈向端部會變成愈高。因此，由於把處理氣體的濃度 境界層之厚度薄的半導體晶片周圍之領域1 2 8的溫度設 定成比其澳度境界層之厚度厚的半導體晶片中央之領域 1 2 6低溫，而能夠均匀地成膜。 經濟部中央梂準局貝工消费合作社印製 同時，在上述處理室1 0 5的側方，和第1形態之裝 置一樣，經由閘閥5 1設有裝載固定室5 2。 接著，說明如此地構成的CVD裝置之動作·»首先’ 和第1形態一樣，把半導體晶片從卡匣收容室搬入到上述 裝載固定室5 2內，再從裝載固定室5 2搬入到處理室 1 0 5內。然後，半導體晶片W將載置到處理室1 0 5內 的載置台1 0 9上，根據未圖示之固定裝置，例如靜電夾 吸著保持在上述載置台1 0 9的載置面》 83. 3.10,000 本紙張尺度逋用中國國家橾率（CNS ) A4现格（210X297公釐） -30 - 經濟部中央標车局員工消費合作社印製 A7 ___B7 五、發明説明（28 ) 其後，第1 ，第2及第3加熱髏1 1 6 ，1 1 7 ， 1 1 8將根據從控制器1 1 9之控制信號分別各別地控制 ，把上述載置台1 0 9的載置面之領域1 2 3 ，1 2 4 ， 1 2 5分別加熱到所希望的溫度，例如5 0 0 °C， 4 5 0 °C，4 0 0 °C。結果，將會根據從載置面之領域 1 2 3，1 2 4 ，1 2 5的傳熱，對應於此等領域之半導 體晶片W的反應表面之領域126 ，127 ，12 8，將 分別加熱到所希望的溫度，例如5 0 0 °C，4 5 0 °C， 4 Ο 0 〇C 0 接著，將從處理氣餹源1 Ο 7經由質量流控制器 1 0 8及處理氣體導入口 1 0 6在上述蓮蓬頭1 〇 2內導 入所定的處理氣體，例如S i 112和Η 2之混合氣體等，並 且，經由蓮蓬頭1 0 2下面的吹出孔1 0 4 ，在處理室 1 0 5內供給上述處理氣體，而對載置在上述載置台 1 0 9之半導體晶片W表面實施成膜處理。 此時，在習知的裝置，從上述蓮蓬頭1 〇 2下面的吹 出孔1 0 4 ，處理氣體將以均勻之流速供給到上述處理室 1 0 5內，但是如前述地，如此的處理氣體之流速對晶片 表面將顯示如圖2 1所示的分佈，故由均勻流速之氣體供 給，在被處理體表面並不一定能夠得到均句的成膜率。 然而，根據如上述地構成Ζ載置台1 〇 9時，由於能 夠如圖1 9所示地把載置台1 〇 9表面的領域1 2 3， 1 2 4 ，1 2 5各別獨立地控制成所希望之溫度’在其載 置面吸著保持的半導體晶片W之處理表面的溫度’也能把 本^張尺ϋ用中國國家樑準（CNS ) Α4規格(210X297公ΪΓΤ ~~ (請先聞讀背面之注意事項再填寫本頁) 裝 訂 線 經濟部中央標準局員工消費合作杜印製 A7 _________B7 五、發明説明（29 ) 各對應於載置面之各領域的領域1 2 6 ，I 2 7 ，1 2 8 各別控制’故如抵銷圖2 1所示之漉度境界層的分佈地， 根據把晶片周圍之溫度設定爲比中央的溫度低，而能夠在 晶片表面以均勻之成膜穿進行成膜，得到均勻且高品質的 薄膜。 如上述地，完成成膜之半導體晶片W，將處理室 1 0 5內的殘留氣體以排氣裝置1 1 0排氣後，將搬出到 裝載固定室5 2 ，再搬出到卡匣收容室。如此地將結束一 連串的處理。 圖2 2 ，係顯示在圈1 8所示的裝置之載置台的變形 例之截面圖。 如圇所示，在本例中係第4加熱體1 3 5配置成如包 園被處理體的半導體晶片W之周圍。該第4加熱體1 3 5 ，能夠根據響應與此對應設置的第4溫度察覺器1 5 5之 信號而從控制器1 1 9所送的控制僧號，把開關1 3 6閉 合斷開控制，而和第1 ，第2及第3之加熱體1 1 6 ， 1 1 7 ，1 1 8個別獨立地控制1 根據如此的構成，將能夠增加控制半導體晶片W之表 面的溫度分佈之控制參數，將能提高控制精確度’同時， 特別在把半導體晶片w從常溫升溫至處理溫度，如 5 0 0。(：時，能夠由配置在周圍的第4加熱髏1 3 5 ，把 其加熱迅速且有效地進行。 以下，說明本發明之第4形態。 圖2 3係將有關該形態的頁紙式C v D裝置模式性地 夂紙張尺度適用中國困家揉準（CNS ) A4规格（210X 297公着） ---------卜裝------訂------綉 (請先«讀背面之注意事項存填寫本頁) A7 A7 經濟部中央標準局員工消費合作社印製 _____B7 五、發明説明（3〇) 顯示之截面圖。該CVD裝置2 ϋ 0具有構成氣密的略園 筒狀之處理室2 0 2，在其中設有載置被處理體的半導體 晶片W用之載置台2 3 1 。 在該處理室2 0 2的上面，有本形態之特徽部份的蓮 蓬頭2 0 3氣密地設置。該蓮蓬頭2 Q 3係成盤狀，在其 中有3個環狀空間2 0 4 ，2 0 5 ，2 ϋ 6形成同心性。 然後，此等環狀空間2 0 4 ，2 0 5 ，2 0 6 ，係由間壁 2 0 8 ，2 0 9 分開。 此等環狀空間2 0 4 ，2 0 5，2 0 6，係如在圚 2 4擴大顯示，使水平斷面稹會分別相等地，愈向外周其 宽度愈窄地構成。根據如此的構成，將能容易把握從各環 狀空間供給到上述處理室2 0 2之處理氣體的流量，故使 處理氣體之控制將成爲容易。 同時，蓮蓬頭2 0 3的處理氣體吹出面2 1 〇 ，也對 應上述環狀空間，分割成面積相等之3個領域2 1 1 ， 2 1 2 ，2 1 3。在該吹出面2 1 〇 ，如圖2 5所示地穿 孔有多數的孔2 1 4 。然後，對各領域2 1 1 ，2 1 2 ， 2 1 3，使孔之開口率（對各領域的面積之在其領域所穿 孔的孔之總面稹的比例）會成爲相等地將孔2 1 4形成。 根據如此之構成，供給到上述處理室2 0 2的處理氣體之 流量將變成更容易把握，而能夠容易進行處埋氣體的控制 0 在如上述地構成之蓮蓬頭2 ΰ 3的上部，設有分別對 應環狀空間2 0 4 ，2 0 5 ，2 (.丨6之處理氣體導入管 (請先聞讀背面之注意事項再填寫本頁} 裝 、1Τ 本紙張尺度適用中國國家標窣（CNS ) Α4规格（210Χ297公釐〉 ；)3 經濟部中央標準局員工消費合作社印製 Α7 Β7 五、發明説明（31 ) 2 1 5，2 1 6 ，2 1 7。此等處理氣體導入管2 1 5， 2 1 6 ，2 1 7 ，係分別經由對應的質量流控制器2 1 8 ，2 1 9 ，2 2 0 ，連通到對應之處理氣體源2 2 1 ， 2 2 2 ，2 2 3 ，能夠根據從控制器2 5 0的控制信號， 對環狀空間2 0 4 ，2 0 5 ，2 0 6各別獨立地把所希望 組成之處理氣雅以所希望的流量供給。 如在第3形態也已說明，半導體晶片W上之處理氣體 的流量（流速），係愈向外周變爲愈大，其程度係如圖 2 6所示地，蓮蓬頭之直徑愈小時愈明顯，同時，隨此處 理氣體的澳度境界層係愈接近晶片之中央部愈厚，愈向端 部將會愈薄。 在本形態，係如上述地，能夠如抵銷處理氣體的流量 分佈及濃度境界層分佈地，將處理氣體供給到上述處理室 2 0 2內，故將能夠把成膜率，成膜之均勻性及膜質，根 據處理環境控制爲最適宜。 在處理室2 0 2的底部附近，設有連通到眞空泵等排 氣裝置2 2 4之排氣管2 2 5 ，根據該排氣裝置2 2 4的 動作，能夠把處理室2 0 2抽出到所定之眞空度。 處理室2 0 2的底部，係由略圓筒狀之支持體所支持 的底板2 2 7所構成。在該底板2 2 7之內部設有冷卻水 儲留處2 2 8 ，冷卻水將從冷媒源2 2 9經由管2 3 0供 給到該冷卻水儲留處2 2 8 ，從未圖示的排水管排出，而 循環冷卻水儲留處2 2 8內。 在底板2 2 7之上面，設有上述載置台2 3 1 ，在載 (诗先閎讀背面之注意事項再填窍本頁) 裝- 糸紙張尺度適用中國國家梂率（CNS ) A4規格（2Η)Χ29·7公釐） 34 3i〇445 A7 ___ B7 經濟部中央樣準局員工消費合作社印製 五、發明説明（32 ) 置台2 3 1的載置面，成爲能夠將半導體晶片根據未圖示 之固定裝置，例如靜電夾，予以載置固定。 在如此的載置台2 3 1 ，內裝有能夠根據開關2 3 2 閉合斷開控制之加熱體2 3 3，在處理時從該加熱體 2 3 3發生的熱，將對上述半導體晶片W由其背面根據傳 熱而供給，半導體晶片W將會加熱成所希望之溫度。 在本形態也和先前的形態-樣，在處理室2 0 2之側 方設有裝載固定室5 2。 以下，說明如此地構成的C V D裝置之動作。首先， 和第1形態一樣，將半導體晶片從卡®收容室搬入到上述 裝載固定室5 2內，並從裝載固定室5 2搬入到處理室 2 0 2內。然後，半導體晶片W將載置到璁理室2 0 2內 的載置台2 3 1上，根據未圖示之固定裝置，如靜電夾吸 著保持在上述載置台2 3 1的載置面。 其後，半導體晶片W將由X述加熱體2 3 3加熱到所 定溫度，例如5 0 0 °C，所定之處理氣體，如S i Η 2和 Η 2的混合氣體將從處理氣體源2 2 1 ’ 2 2 2 ，2 2 3 ，分別經由質量流控制器2 1 8 ，2 1 9 * 2 2 0及處理 氣體導入口 15，16，17導入到蓮蓬頭2 0 3內之環 狀空間2 0 4 ，2 0 5 ，2 0 6內，並且，經由在對應各 環狀空間2 0 4 ，2 0 5 ，2 〇 6的氣體吐出面之領域 2 1 1 ，2 1 2 ，2 1 3所穿設之孔2 1 4 ，供給到處理 室2 0 2內，而實施對載置在載置台2 3 1的半導體晶片 W表面之成膜處理。 (請先閎讀背面之注意事項再填寫本頁) 絮· f 锊 本紙张尺度適用中國國家揉率（CNS ) A4.洗格U10X297公藿） 經濟部中央梯準局員工消费合作杜印裝 A 7 B7 五、發明説明（33 ) 此時，根據如上述地構成的蓮蓬頭2 0 3時，由於供 給到環狀空間204 ，205，206之處理氣髏的組成 及流量將能各別獨立地控制，故能夠如抵銷在先前之蓮蓬 頭所發生的氣體流量分佈及漉度境界層分佈地，把處理氣 體供給。結果，將能夠以所希望之成膜率，對半導體晶片 W資施均匀且高品質的成膜。 再者，雖然上述例，係構成汪各環狀空間把同種類的 處理氣體，例如S i Η 2和Η 2之混合氣體，但是並不限於 此，也可以對環狀空間2 0 4 ，2 0 5 ，2 0 6供給不同 種類的氣體，使之在上述處理室2 0 2內把各氣體混合。 由於蓮蓬頭2 0 3的環狀空間2 0 4 ，2 0 5 ， 2 0 6係配置成同心圓狀，故花處理小徑之半導體晶片W 時，只要把例如對最外周側的環狀空間2 0 6之處理氣體 的供給停止，而不需要把蓮蓬頭本身配合要處理之半導體 晶片W的外徑更換。但是，此時使處理氣體不會在處理中 ，從處理室2 0 2內從穿設在對應於環狀空間2 0 6之氣 體吹出面領域2 1 3的孔2 1 4倒流地，構成能將上述環 狀空間2 0 6本身從上述處理室2 0 2隔離爲理想。 如上述地，完成成膜的半導體晶片W，在把處理室 2 0 2內之殘留氣體根據上述排氣裝置2 2 4排氣後，將 搬出到裝載固定室5 2 ，並將搬出到卡匣收容室。如此地 將結束一連串的處理。 在圖2 7 ，顯示蓮蓬頭2 0 3之其他例。在此例中， 係如圖示，在環狀空間2 0 4 ，2 0 5 ，2 0 6內設有2 本紙張尺度通用中國國家標準（CNS ) A4規格（210X297公§ ) 36 (請先閱讀背面之注意事項再填寫本頁) 裝.V. Description of the invention (25) 1 1 Near the bottom of the processing chamber 1 0 5 is provided with an exhaust pipe 1 1 0 to the exhaust pump 1 1 0 such as the exhaust pipe 1 1 1 due to the exhaust U4r device 1 1 1 1 0 Action »Become able to maintain the above processing chamber 1 0 5 to the predetermined 1 I Please 1 decompression • ma Song Jing) For example 1 0 -6 T 〇rr G First read 1 I The above processing chamber 1 0 5 The bottom of the base is supported by a slightly cylindrical shape-the bottom plate 1 1 1 3 supported by the back of Lidu 1 1 3 and the attention of the bottom plate 1 1 3 is provided with a cooling water storage 1 1 4 The cooling water will be supplied from the refrigerant source 1 1 5 Item I and then 1 to the cooling water storage place through the pipe 1 4 0. 1 1 4 Unfilled% not shown Unloaded from the discharge pipe of this unit> While circulating cooling water is stored 1 1 4 in 0 pages 1 I and on the bottom plate 1 1 3 above til insulation The material 1 1 5 is provided with a carrier 1 I platform 1 0 9 0. -1 ^ is formed on the carrier α 1 0 9 — there is a supply path 1 for supplying the heat transfer medium to the back surface of the processed 1 1 I body W placed 5 0 > Order 1 5 0 in the supply path 1 > The heat transfer medium H e source 1 5 1 will be supplied to H e 0 1 1 via the heat transfer medium supply tube 1 5 0 to the semiconductor wafer W 1 1 The supply amount of the heating medium on the back will be controlled by adjusting the opening of the valve 1 4 2 from the control signal of the controller 1 1 9 1 1 to be described later 0 | At the same time 9 in the above placement 1 0 9 has the first 9 2nd and 3rd I 1 Heating element 1 1 6 9 1 1 7 > 1 1 8 arranged in a slightly concentric shape. These 1 1 Heating element 1 1 6 1 1 7 > 1 1 8 Solid state relay (1 SSR) The switch 1 2 0 9 1 2 1 1 2 2 is connected to the power supply 1 | 1 3 0 1 3 1 1 3 2, according to the power supply from the power supply generates heat 0 1 I then »According to the slave controlThe control signal of the controller 1 1 9 makes the solid relay (SSR) corresponding to these plus 1 I heating body 1 1 6 1 1 7, 1 1 8 1 1 1 2 0 > 1 2 1 * 1 2 2 closed Open control ♦ According to this, it can independently control the 1 1 I winter paper scale applicable to China National Standard (CNS M4 specification (210X297 mm) 28 A7 3: 10445 ____B7 V. Invention description (26) These heating bodies are made. In the example shown in the figure, three heaters 1 1 6, 1 1 7, 1 1 8 are arranged in a slightly concentric pattern, but (please read the precautions on the back and fill in this page) It is not limited to such a configuration, but an arbitrary number of heating bodies can be mounted on the mounting table with an arbitrary design, and many desired fields on the surface of the mounting table can be independently heated and kept warm at desired temperatures. At the same time, as shown in FIG. 19, the mounting table 1 〇9 is formed with three concentric circular heating areas 1 2 3, 1 2 corresponding to the heating bodies 1 1 6, 1 1 7, 1 1 8 4, 1 2 5, temperature sensors 1 5 2, 1 5 3, 1 5 4 are installed in these heating areas respectively. From these temperature detectors 1 5 2, 1 5 3, 1 5 4 detection signals will be input to the above controller 1 1 9, according to the girdle detection signal, the controller 1 1 9 anti-hunger control will be supplied to Fu Re The supply amount of the heat transfer medium of the medium supply pipe 15 () and the output of the above-mentioned heating bodies 1 1 6, 1 1 7, 1] 8. With such a structure, it is possible to control the temperature of the mounting surface 1 0 9 in the above three slightly concentric areas 1 2 3 * 1 2 4, 1 2 5 Printed by the Employee Consumer Cooperative of the Central Department of Economics of the Ministry of Economic Affairs Don't do it independently, set different temperatures in these three areas. Then, the semiconductor wafer W held on its mounting surface is sucked, and since the heat of the mounting table 106 will be supplied from the back side by heat transfer, its temperature distribution will be corresponding to the three fields of the mounting table 1 0 9 , The wafer W will form a slightly concentric shape corresponding to the three areas 1 2 3, 1 2 4, 1 2 5 1 2 6 * 1 2 7 * 1 2 8 ° As a result, the concentration of the processing gas The thickness of the semiconductor layer of the thin layer of the boundary layer is around the temperature of the field 1 2 8 is set to be lower than that of the center of the semiconductor wafer 1 2 6 of the thickness of the concentration block boundary, although it has the general standard of the Chinese standard. (CNS) A4 specification {Ιϋχ 297 g) ~~., () — B7 V. Description of invention (27) The existence of layer distribution will try to make the film formation rate uniform. Β The reason will be explained below. In the sheet-type CVD apparatus 1 shown in FIG. 18, a predetermined processing gas, such as S, is processed in the processing chamber 105 through a hole 1 0 4 perforated plate 10 3 provided in the bottom surface of the shower head 102. When Η 4 etc. are introduced at a uniform flow rate, the processing gas will show the gas flow shown by the arrow symbol. The flow velocity U of the processing gas on the semiconductor wafer W will become a function of the radius r of the wafer, as shown in Figure 20. The flow rate will be distributed faster toward the outer periphery. At this time, the thickness of the processing gas concentration boundary layer, which has a great relationship with the movement amount of the film-forming substance, < 5 is a function of the flow velocity u of the processing gas, so the distribution of the thickness of the concentration boundary layer on the surface of the semiconductor wafer As shown in Figure 21 *, the thicker the center, the thinner the end, and as a result, the temperature will become higher from the center to the end. Therefore, by setting the temperature of the area around the semiconductor wafer 1 2 8 where the thickness of the processing gas concentration boundary layer is thinner to a lower temperature than the area 1 2 6 at the center of the semiconductor wafer where the thickness of the Australian boundary layer is thicker, it can be uniform Film formation. Printed by the Beigong Consumer Cooperative of the Central Bureau of Economic Affairs of the Ministry of Economic Affairs. At the same time, on the side of the processing chamber 105, as in the apparatus of the first form, a loading fixing chamber 52 is provided via the gate valve 51. Next, the operation of the CVD apparatus configured in this manner will be described. "First" As in the first embodiment, the semiconductor wafer is carried from the cassette storage chamber into the loading and fixing chamber 52, and then from the loading and fixing chamber 52 to the processing chamber Within 1 0 5. Then, the semiconductor wafer W is mounted on the mounting table 1 0 9 in the processing chamber 105, and is held on the mounting surface of the mounting table 1 0 9 according to a fixing device (not shown), such as electrostatic clamping. . 3.10,000 copies of this paper are used in China's National Standard Rate (CNS) A4 (210X297 mm) -30-A7 ___B7 printed by the Employee Consumer Cooperative of the Central Standard Vehicle Administration of the Ministry of Economy V. Description of invention (28) The 1st, 2nd and 3rd heating skulls 1 1 6, 1 1 7, 1 1 8 will be individually controlled according to the control signals from the controller 1 1 9 to control the placement surface of the above-mentioned mounting table 1 0 9 The fields 1 2 3, 1 2 4, and 1 2 5 are heated to the desired temperature, for example, 500 ° C, 4 50 ° C, and 400 ° C. As a result, according to the heat transfer from the areas 1 2 3, 1 2 4, 1 2 5 of the mounting surface, the areas 126, 127, and 12 8 corresponding to the reaction surface of the semiconductor wafer W in these areas will be heated separately To the desired temperature, for example, 50 0 ° C, 4 5 0 ° C, 4 〇 0 〇C 0 Next, from the process gas source 1 Ο 7 through the mass flow controller 1 0 8 and process gas inlet 1 0 6 Into the above shower head 102, a predetermined processing gas is introduced, for example, a mixed gas of Si 112 and H 2, etc., and it is supplied in the processing chamber 105 through the blow-out hole 1 0 4 below the shower head 102. The processing gas is subjected to a film formation process on the surface of the semiconductor wafer W mounted on the mounting table 109. At this time, in the conventional device, the processing gas will be supplied into the processing chamber 105 at a uniform flow rate from the blowing hole 1 0 4 below the shower head 102, but as described above, such processing gas The flow rate will show a distribution as shown in Figure 21 on the surface of the wafer. Therefore, even if a uniform flow rate of gas is supplied, the uniform film formation rate may not be obtained on the surface of the object to be processed. However, when the Z stage 1 〇9 is constructed as described above, since the areas 1 2 3, 1 2 4 and 1 2 5 on the surface of the stage 1 〇9 can be controlled independently as shown in FIG. 19 The desired temperature 'the temperature of the processing surface of the semiconductor wafer W sucked and held on its mounting surface' can also be used with the Chinese standard Liang Zhu (CNS) Α4 specification (210X297 ΪΓΤ ~~ (please first Read the precautions on the back and fill in this page) Binding line A7 _________B7 for consumer cooperation of the Central Standards Bureau of the Ministry of Economic Affairs 5. Invention description (29) Each corresponds to the field of the mounting surface 1 2 6, I 2 7, 1 2 8 separate control, so as to offset the distribution of the boundary layer shown in Figure 21, the temperature around the wafer is set to be lower than the temperature of the center, and it can be uniformly formed on the surface of the wafer The film is passed through to form a film to obtain a uniform and high-quality film. As described above, after the film-forming semiconductor wafer W is completed, the residual gas in the processing chamber 105 is exhausted by the exhaust device 1 10, and then it is transferred to Load the fixed chamber 5 2, and then move it out to the cassette storage room. A series of treatments. Figure 2 2 is a cross-sectional view showing a modified example of the mounting table of the device shown in circle 18. As shown in Fig. 4, in this example, the fourth heating body 1 3 5 is configured as a package Around the semiconductor wafer W of the object to be processed. The fourth heating element 1 3 5 can be sent from the controller 1 1 9 according to the signal of the fourth temperature sensor 1 5 5 provided in response to this. No., turn on and off the switch 1 3 6 to control, and the 1st, 2nd and 3rd heating bodies 1 1 6, 1 1 7, 1 1 8 are individually controlled 1 According to such a configuration, the control can be increased The control parameters of the temperature distribution on the surface of the semiconductor wafer W will improve the control accuracy. At the same time, especially when the semiconductor wafer w is heated from normal temperature to the processing temperature, such as 500. 4 Heating the skull 1 3 5 and heating it quickly and efficiently. The fourth form of the present invention will be described below. Fig. 23 The paper-type C v D device of this form is used to model the paper size in China. Sleepy home kneading (CNS) A4 specification (210X 297 public) --------- Bu outfit ----- -Order ------ Embroidery (please first «read the notes on the back and fill in this page) A7 A7 Printed by the Employee Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs _____B7 V. Description of Invention (3〇) The cross-sectional view shown. The CVD apparatus 2 ϋ 0 has a gas-tight, substantially cylindrical processing chamber 2 0 2, and a mounting table 2 3 1 for mounting semiconductor wafers W to be processed is provided in the processing chamber 2 0 2. On the top, the shower head 2 0 3 with the special emblem part of this form is installed airtightly. The shower head 2 Q 3 is disc-shaped, with three annular spaces 2 0 4, 2 0 5, 2 ϋ 6 forming concentricity. Then, these annular spaces 2 0 4, 2 0 5, 2 0 6 are separated by partitions 2 0 8, 2 0 9. These annular spaces 2 0 4, 2 0 5, 2 0 6 are expanded and displayed as shown in Fig. 24, so that the horizontal cross-sections will be equal, and the width will be narrower toward the outer periphery. According to such a configuration, the flow rate of the processing gas supplied from each annular space to the processing chamber 202 can be easily grasped, so that the control of the processing gas becomes easy. At the same time, the processing gas blowing surface 2 1 0 of the shower head 203 also corresponds to the above-mentioned annular space and is divided into three areas 2 1 1, 2 1 2, 2 1 3 with equal area. On this blowing surface 2 1 〇, as shown in FIG. 25, a large number of holes 2 1 4 are perforated. Then, for each area 2 1 1, 2 1 2, 2 1 3, the opening ratio of the holes (the ratio of the total area of the holes perforated in the areas of each area to the area) will become equal. 1 4 formed. According to such a configuration, the flow rate of the processing gas supplied to the processing chamber 202 becomes easier to grasp, and the control of the buried gas can be easily performed. On the top of the shower head 2 ΰ 3 configured as described above, there are Corresponding to the annular space 2 0 4, 2 0 5, 2 (. 丨 6 treatment gas inlet tube (please read the precautions on the back and then fill out this page) 装 、 1Τ This paper size is applicable to China National Standard (CNS) Α4 specification (210Χ297mm>;) 3 Printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economy Α7 Β7 V. Description of invention (31) 2 1 5, 2 1 6, 2 1 7. These processing gas introduction tubes 2 1 5 , 2 1 6, 2 1 7, which are connected to the corresponding processing gas sources 2 2 1, 2 2 2, 2 2 3 via the corresponding mass flow controllers 2 1 8, 2 1 9, 2 2 0, respectively According to the control signal from the controller 2 50, the processing gas of the desired composition is independently supplied to the annular space 2 0 4, 2 0 5, 2 0 6 at the desired flow rate. As in the third form It has also been explained that the flow rate (flow rate) of the processing gas on the semiconductor wafer W becomes more and more The larger, the degree is as shown in Figure 26. The smaller the diameter of the shower head is, the more obvious. At the same time, the thicker the Aodu boundary layer with the processing gas is, the thicker the center of the wafer is, and the more the end will be. In this embodiment, as described above, the processing gas can be supplied into the processing chamber 202 as described above to offset the flow rate distribution and concentration boundary layer distribution of the processing gas, so the film formation rate and film formation can be achieved. The uniformity and film quality are optimally controlled according to the processing environment. Near the bottom of the processing chamber 202, there is an exhaust pipe 2 2 5 connected to an exhaust device 2 2 4 such as a hollow pump. According to the exhaust device The operation of 2 2 4 can draw the processing chamber 202 to a predetermined vacancy. The bottom of the processing chamber 202 is composed of a bottom plate 2 2 7 supported by a support having a substantially cylindrical shape. 2 2 7 is equipped with a cooling water storage 2 2 8. The cooling water will be supplied from the refrigerant source 2 2 9 to the cooling water storage 2 2 8 through the pipe 2 3 0 and will be discharged from the drain pipe not shown. , And the circulating cooling water storage area 2 2 8. Above the bottom plate 2 2 7, with the above placement 2 3 1, in the set (read the precautions on the back of the poem first and then fill in this page) Packing-The size of the paper is applicable to the Chinese national frame rate (CNS) A4 specification (2Η) Χ29 · 7mm) 34 3i〇445 A7 ___ B7 Printed by the Employee Consumer Cooperative of the Central Prototype Bureau of the Ministry of Economic Affairs 5. Description of the invention (32) The mounting surface of the platform 2 3 1 becomes a mounting device that can hold and fix the semiconductor wafer according to an unillustrated fixing device such as an electrostatic clip . On such a mounting table 2 3 1, a heating body 2 3 3 capable of closing and opening control according to the switch 2 3 2 is installed. The heat generated from the heating body 2 3 3 during processing will affect the above-mentioned semiconductor wafer W by The back surface is supplied according to heat transfer, and the semiconductor wafer W will be heated to a desired temperature. In this embodiment, as in the previous embodiment, a load fixing chamber 52 is provided on the side of the processing chamber 202. The operation of the C V D device thus constructed will be described below. First, as in the first embodiment, the semiconductor wafer is carried from the card® storage chamber into the above-mentioned loading and fixing chamber 52, and from the loading and fixing chamber 52 into the processing chamber 202. Then, the semiconductor wafer W is mounted on the mounting table 2 3 1 in the processing chamber 202, and is held on the mounting surface of the mounting table 2 31 by electrostatic clamping according to a fixing device (not shown). Thereafter, the semiconductor wafer W will be heated by the heating body 2 3 3 described in X to a predetermined temperature, for example, 500 ° C. The predetermined processing gas, such as the mixed gas of S i Η 2 and Η 2 will be from the processing gas source 2 2 1 '2 2 2, 2 2 3, through the mass flow controller 2 1 8, 2 1 9 * 2 2 0 and process gas inlets 15, 16, 17 into the annular space within the shower head 2 0 3 2 0 4 , 2 0 5, 2 0 6, and through the area 2 1 1, 2 1 2, 2 1 3 through the area of the gas discharge surface corresponding to each annular space 2 0 4, 2 0 5, 2 〇6 The holes 2 1 4 are supplied into the processing chamber 202, and a film forming process is performed on the surface of the semiconductor wafer W mounted on the mounting table 2 31. (Please read the precautions on the back first and then fill out this page). · · The standard of this paper is applicable to China National Crushing Rate (CNS) A4. Washing U10X297 Public Weapons) Ministry of Economic Affairs Central Bureau of Standards and Technology Employee Consumption Cooperation Du Printing A 7 B7 V. Description of the invention (33) At this time, the composition and flow rate of the treatment gas skeleton supplied to the annular spaces 204, 205, and 206 will be independently controlled according to the shower head 203 constructed as described above Therefore, the process gas can be supplied as if it offsets the gas flow distribution and the distribution of the boundary layer that occurred in the previous shower head. As a result, uniform and high-quality film formation can be applied to the semiconductor wafer W at a desired film formation rate. Furthermore, although the above example constitutes a ring-shaped space containing the same type of processing gas, for example, a mixed gas of Si H 2 and H 2, it is not limited to this, and the ring space 2 0 4, 2 0 5, 2 0 6 supply different kinds of gases, so that they mix the gases in the processing chamber 202. Since the annular spaces 2 0 4, 2 0 5, and 2 0 6 of the shower head 2 0 3 are arranged concentrically, when processing the small-diameter semiconductor wafer W, as long as the annular space 2 The supply of the processing gas of 0 6 is stopped without replacing the shower head itself with the outer diameter of the semiconductor wafer W to be processed. However, at this time, the processing gas will not be in the process. From the processing chamber 202, the hole 2 1 4 that penetrates into the gas blowing surface area 2 1 3 corresponding to the annular space 2 0 6 will flow backward to constitute It is desirable to isolate the annular space 206 itself from the processing chamber 202. As described above, after the film-forming semiconductor wafer W is exhausted, the residual gas in the processing chamber 202 is exhausted to the loading and fixing chamber 5 2 according to the exhaust device 2 2 4, and then it is transported to the cassette Containment room. This will end a series of processing. In Fig. 2 7, other examples of the shower head 203 are shown. In this example, as shown in the figure, there are 2 paper scales in the annular space 2 0 4, 2 0 5, 2 0 6 Universal Chinese National Standard (CNS) A4 specification (210X297 public §) 36 (please first Read the precautions on the back and then fill out this page).

•tT A 7 B? 經濟部中央標準局負工消費合作杜印裝 五、發明説明（34 ) 層的緩衝板2 4 0，2 4 1 ，設法使從各處理氣體導入管 2 1 5 ，2 1 6 ，2 1 7分別導入到環狀空間2 〇 4 ， 2 0 5，2 0 6內之處理氣體整流化。根據如此的構成， 從對應於環狀空間2 0 4 ，2 0 5 ，2 0 6之吹出面領域 2 1 1 ，2 1 2 ，2 1 3供給到颼理室2 0 2內的處理氣 體將會整流，而能提高氣體供給纛之控制精確度。再者， 做爲圖示的實施例能夠使用之緩衝板2 4 1 ，能使用在板 材穿設多數的孔者，或把線材編成網眼狀者。 以下，說明第5形態。 本形態之特徵，係在C V D裝置等眞空處理裝置的， 加熱器，靜電夾等在眞空下所給電之對被給電構件給電的 給電部。 圖2 8係顯示有關本形態之C V D裝置的截面圖。本 裝置因基本構造和圖1所示之第1形態的裝置相同，故和 圖1之裝置相同者將附以相同記號而省略說明。 在本形態中，載置半導體晶片w的載置台2 1係經由 支持構件2 1 a，2 1 b載置在底板9。同時，在載置台 2 1下方之對應於其周緣部的部份，和載置台2 1 —體地 ，配設有例如B N製之筒狀的支持構件2 ] c。 在載置台2 1和第1形態之裝置一樣，設有靜電夾用 的導電體2 4 ，2 5及加熱器2 6等之被給電部，爲了向 此等被給電部給電用的給電部3 0 〇 a，3 0 0 b，設在 此等與此等的電源之間。在本形態時，做爲給電部係對導 電體24，25及加熱器26，分別使用相同構造者，如 本紙張尺度適用中國國家操準（CNS ) A4规格（2!ΟX 297公着） (請先閲讀背面之注意事項再填寫本頁)• tT A 7 B? The Ministry of Economic Affairs, Central Standards Bureau, Negative Labor Consumption Cooperation Du Printed Packing 5. Invention description (34) Layer of buffer plates 2 4 0, 2 4 1, trying to make the gas introduction pipes 2 1 5, 2 from each process 1 6, 2 1 7 are introduced into the annular space 2 0 4, 2 0 5, 2 0 6 process gas rectification. According to such a configuration, the processing gas supplied into the process chamber 2 0 2 from the blowing surface area 2 1 1, 2 1 2, 2 1 3 corresponding to the annular space 2 0 4, 2 0 5, 2 0 6 It will rectify, and can improve the control accuracy of the gas supply. In addition, the buffer plate 2 4 1 that can be used as the embodiment shown in the figure can be used in the case where a large number of holes are drilled in the plate material, or the wire material is knitted into a mesh shape. Hereinafter, the fifth embodiment will be described. The feature of this form is the power supply unit that supplies power to the power supply member in the empty processing device such as a C V D device, heaters, electrostatic clips, etc., which are supplied under the empty space. Figure 28 shows a cross-sectional view of a C V D device of this form. Since the basic structure of this device is the same as the device of the first form shown in FIG. 1, the same symbols as those of the device of FIG. 1 will be given the same symbols and their description will be omitted. In this embodiment, the mounting table 2 1 on which the semiconductor wafer w is placed is placed on the bottom plate 9 via the support members 2 1 a, 2 1 b. At the same time, a portion corresponding to the peripheral portion of the mounting table 2 1 and the mounting table 2 1 are integrally provided with, for example, a cylindrical support member 2 c made of B N. The mounting table 21 is the same as the device of the first form, and is provided with power-supplying parts such as conductors 24, 25 and heaters 26 for electrostatic clips, and a power-supplying part 3 for supplying power to these power-supplying parts. 0 〇a, 3 0 0 b, set between these and these power supplies. In this form, as the power supply department, the same structure is used for the conductors 24, 25 and the heater 26, for example, the paper standard is applicable to China National Standards (CNS) A4 specifications (2! ΟX 297 public) ( (Please read the notes on the back before filling this page)

I -¾ - ^^-0445 A7 ___B7 五、發明説明（35 ) — ~一~ 圖2 9所示，對靜電夾用的導電體2 4 ，2 5給電之給電 部3 0 0 a和對加熱器2 6給電的給電部3 0 0 b沿著載 置台2 1之周方向排列。 圖30 ，係顯示給電部3 0 Ua (300b)的詳細 之截面圖。該給電部，具有設在載置台2 1側的插座端子 3 0 2 ，和能夠與此嵌合之插頭端子3 Q 4 ，此等構成其 主要部份。插座端子3 0 2 ，係由有底開口之一的具有向 下開口之帽狀構件所構成，例如，埋設在和載置台2 1設 成一體的前述支持構件2 1 c底部。 在該插座端子3 0 2實施有表面處理。關於該表面處 理參照圚3 1 A〜3 1 C說明。在插座端子3 0 2埋設在 支持構件2 1 c的階段，係如_ 3 1 A所示地內底部近傍 係形成有比向下開口之內徑小的段部° 如此形狀之插座端子3 Q > 首先，做爲導電層的碳 層3 0 2 A將根據C V ’D處理予以塗層。該碳層3 0 2 A ，並非只塗層在插座端子3 0 2 ，能夠從端子3 0 2之位 經濟部中央標準局員工消费合作社印製 (請先閲讀背面之注意事縐再填寫本頁) g向電極部3 4 ，3 6或加熱器3 8延長而構成在各導霉 體間的配線部。然後，在該碳層3 0 2A上面，例如，P —B N (焦—氮化硼）根據C V D處理塗層而形成絕緣層 3 0 2 B，成爲圖3 1 B所示之狀態。 如此的表面處理，因係和在第】形態說明之載置台 2 1的表面所形成之第2絕緣層相同的處理，故在形成載 置台2 1之階段由事先將插座端子3 0 2埋設，而能和載 置台2 1側的處理同時實施。 本紙张尺度適用中國國家橾準（CNS ) A4規格（210X297公t ) 31C 4 4 5 A1 B7 五、發明説明（36) 然後，如圖3 1C所示，在形成絕緣層3 〇 2B之插 座端子3 0 2 ，由於把在內底部近傍的段部之內周面以機 械加工切削而去除絕緣餍3 0 2 Ei，使碳的導遭餍露出， 其位置將做爲和插頭端子3 0 4之接點3 (3 2 C。 亦即，在插座端子3 0 2的導電部，將只形成在靠近 內底之底側。在本例的情況，由於將內底部近傍之側面切 削，使絕緣層3 0 2 B的內徑和接點3 0 2 C之內徑成爲 略同。 將如此的側面做爲接點時，即使在插頭端子側產生熱 膨脹而插頭端子3 0 4向軸方向膨脹變形時，也能夠維持 和插頭端子的接觸。再者，也可以代替去除絕緣層 3 0 2 B而形成接點3 0 2 C，也能夠事先使上述段部露 出，而把相當於接點3 0 2 C的位置以外予以塗層。 同時，如圖3 2所示，在支持構件2 1 C之將插入插 座端子3 0 2的凹部及支持構件2 1 C之外側形成導電層 3 0 2 D，在該導電層3 0 2 I)的凹部內側之垂直部份形 經濟部中央橾準局月工消費合作杜印製 (請先聞讀背面之注意事項再填寫本頁) 成螺紋，在該螺紋使碳等所形成的導電性帽3 0 2 E以及 B N等所形成之絕緣性帽3 0 2 F螺合，以此等導電性帽 3 0 2 E及絕緣性帽3 0 2構成插座端子3 Q 2 °然後， 除了導電性帽3 0 2 E的部份，和圖3 1 B —樣將形成由I -¾-^^-0445 A7 ___B7 V. Description of the invention (35) — ~ 一 ~ As shown in FIG. 2 9, the power supply part 3 0 0 a and the heating for the electric conductors 2 4, 2 5 for electrostatic clamping The power supply units 3 0 0 b for power supply of the devices 26 are arranged along the circumferential direction of the mounting table 21. Fig. 30 is a detailed cross-sectional view showing the power supply unit 30 Ua (300b). This power supply unit has a socket terminal 3 0 2 provided on the mounting table 21 side, and a plug terminal 3 Q 4 that can be fitted with this, and these constitute the main part. The receptacle terminal 30 2 is constituted by one of the bottomed openings and a cap-shaped member having a downward opening, for example, buried in the bottom of the aforementioned support member 2 1 c provided integrally with the mounting table 2 1. The receptacle terminal 302 is subjected to surface treatment. For the surface treatment, refer to the description of 3 1 A to 3 1 C. At the stage where the socket terminal 3 0 2 is buried in the support member 2 1 c, as shown by _ 3 1 A, a segment with a smaller inner diameter than the downward opening is formed near the bottom of the ground. > First, the carbon layer 3 0 2 A as the conductive layer will be coated according to CV'D treatment. The carbon layer 3 0 2 A is not only coated on the socket terminal 3 0 2, but can be printed from the terminal 30 2 at the Ministry of Economic Affairs Central Standards Bureau Employee Consumer Cooperative (please read the precautions on the back before filling this page ) g extends toward the electrode portions 3 4, 3 6 or the heater 3 8 to constitute a wiring portion between each of the molds. Then, on the carbon layer 302A, for example, P-BN (pyro-boron nitride) is coated with C V D to form an insulating layer 302B, which is in the state shown in FIG. 31B. Such surface treatment is the same treatment as the second insulating layer formed on the surface of the mounting table 21 described in the first form. Therefore, the socket terminal 30 2 is buried in advance when the mounting table 21 is formed. It can be carried out simultaneously with the processing on the mounting table 21 side. This paper scale is applicable to China National Standards (CNS) A4 (210X297 g) 31C 4 4 5 A1 B7 5. Description of invention (36) Then, as shown in FIG. 3 1C, the socket terminal of the insulating layer 3 〇2B is formed 3 0 2, the inner peripheral surface of the section near the inner bottom is machined to remove the insulating coating 3 0 2 Ei, so that the carbon guide is exposed, and its position will be that of the plug terminal 3 0 4 Contact 3 (3 2 C. That is, the conductive part of the socket terminal 3 0 2 will be formed only on the bottom side near the inner bottom. In the case of this example, the side near the inner bottom is cut to make the insulating layer The inner diameter of 3 0 2 B is the same as the inner diameter of contact 3 0 2 C. When such a side is used as a contact, even if thermal expansion occurs on the plug terminal side and the plug terminal 3 0 4 expands and deforms in the axial direction It can also maintain contact with the plug terminal. Furthermore, instead of removing the insulating layer 3 0 2 B to form a contact 3 0 2 C, the above-mentioned segment can also be exposed in advance, and the equivalent contact 3 0 2 Coat outside the position of C. At the same time, as shown in Figure 32, insert the insert into the support member 2 1 C The concave portion of the seat terminal 3 0 2 and the support member 2 1 C are formed with a conductive layer 3 0 2 D on the outer side, and the vertical portion inside the concave portion of the conductive layer 3 0 2 I) is shaped like a vertical part of the Ministry of Economic Affairs, Central Bureau of Industry and Commerce Du Yin (please read the precautions on the back before filling out this page) into a thread, and on this thread a conductive cap 3 0 2 E made of carbon, etc. and an insulating cap 3 0 2 F formed by BN etc. Then, the conductive cap 3 0 2 E and the insulating cap 3 0 2 constitute the socket terminal 3 Q 2 °. Then, except for the part of the conductive cap 3 0 2 E, it will be formed as shown in FIG. 3 1 B

P — B N等所成之絕緣層3 0 2 B。此時，接點3 0 2 C 將形成在導電性帽3 0 2 E的內側部份。 一方面，插頭端子3 0 4 ，具有導電部3 〇 4 A和支 持部3 Q 4 B。導電部3 Q 4 A，例如，具有比插_座端子 本紙張尺度適用中國國家標率（CNS ) A4規格（2丨0X297公着） 39 - A 7 B7 五、發明説明（37) 3 0 2的接點3 0 2 C之內徑稍大的外徑，以在高溫環境 下也能維持某程度之彈力的鎢所形成。然後，導電部 3 0 4 A 9 係 如 圖 3 3 所 示 數 之 縫 隙 3 0 4 A 1 ， 同時， 支 持構件 2 1 C 的 底 部 之 下 壓 入 到 插 座 端 子 3 0 2 內 時 力 9 在 插 座 端 子 3 0 2 之 接 層 3 0 2 B 之 間 密 接 0 而 且 > 因 爲 縫 隙 3 0 4 位 置 > 故 能 使 插 座 端 子 3 0 壓 力 均 衡 由 此 » 能 夠 消 除 同 時 9 壓 入 到 插 座 端 子 係 如 圖 3 1 C 所 示 ， 在 導 電 3 0 2 的 內 底 部 之 間 設 定 有 吸 收 後 述 在 支 持 部 3 0 4 B 子 3 0 4 的 導 電 部 3 0 4 A 端 子 3 0 2 之 間 的 尺 寸 差 之 縫 隙 間 的 邊 部 向 外 側 鼓 出 同 時 導 電 部 3 0 4 A 子 3 0 之 接 點 3 0 2 C 的 位 如 9 以 使 用 S i C S i 0 ffS m 0 據 此 9 將 能 阻 止 在 相 鄰 —- 方 面 ， 支 持 部 3 0 4 3 0 4 A 用 之 構 件 ， 在 本 例 經濟部中央標准局員工消費合作杜印裝 ，從其頭部沿軸方向形成有多 該縫隙3 ΰ 4 A :使終端在比 方。因此，在插頭端子3 0 4 ，能夠利用彎曲變形時的復原 點3 〇 2 C至向下開口的絕緣 A延長到支持構件2 1 C下方 2內的壓力和插座端子外部之 壓入時的多餘阻力。 3 〇 2內之插頭端子3 0 4 ， 部3 i) 4 A的頭部和插座端子 微小的空隙（]?)。由此，能 發生之熱膨脹◊再者，插頭端 ，係爲了使之得到由於和插座 密接特性，也可以適用事先使 者；） ，在圖33，係在接觸插座端 置3 () 4 A 2以外之表面，例 2等的C V D處理形成有絕緣 之插頭端子間的放電。 B，係爲了固定導電部 ，係由鎳合金所成之可巴爾所 (請先閱讀背面之注意事項再填寫本頁) 、v6 本紙張尺度逋用中國國家標準^^”从规格丨力⑽撕公费） 40 經濟部中央樣準局員工消費合作社印製 Μ ___ _ Β7 五、發明説明（38 ) 構成。支持部3 0 4 B係以陶瓷管3 G 4 C所覆蓋。然後 ，支持部3 Ο 4B的前端，亦即，在和導電部3 Ο 4A對 向之端部，如圖3 3所示，形成有圍柱狀的突起 3 0 4 Bi，由於把該突起3 0 4 Βι對形成在導電部 3 0 4 A底部之孔3 0 4 A 3閂嵌，而使支持部3 〇 4 B 和導電部3 0 4 A —體化。由於進行如此的閂嵌，即使， 在接近加熱器側之前端側溫度上升而在突起3 0 4 B 1發 生熱膨脹時，能夠得到更堅固的結合狀態。 同時，支持部3 0 4 B係使下端爲配線連接部，成爲 使其中途固定在底板9。亦即，在底板9的下面安裝有陶 瓷製之支持體3 0 8，在該支持體3 ΰ 8的下部內面有支 持3 0 4 Β以硬焊固定。把支持體3 0 8做爲陶瓷製，係 除了支持部3 0 4 Β和外部的絕緣外，也由於在支持部 3 0 4 Β所用之可巴爾之間的熱膨脹率接近而防止硬焊部 3 0 4D之剝離用。同時，在底板9和支持體3 0 8的對 向面配置有封油圈1 0。 同時，在支持部3 0 4 Β之軸方向途中，形成有將軸 本身形成螺旋狀的切入部3 0 4 Β 2，根據該切入部 3 0 4 Β2，在導電部3 0 4 Α和硬焊的支持部3 0 4 Β 的軸線偏位時，導電部3 (3 4也能使之整合到插座端子 3 0 2 <=> 並且，支持部3 0 4 B，係從前端至對向於後述的冷 卻部之位置，換言之，在接觸減壓環境範園的表面，和導 電部3 Ο 4A —樣，由使用S丨〇2，S ί N之CVD處 表紙張尺度適用中國國家標準（CNS ) Α4规格（2!0:<297公1~7 " (請先閎讀背面之注意事項再填寫本頁 裝' 訂 綉 經濟部中央標準局員工消费合作杜印装 _______87 五、發明説明（39) 理形成有絕緣層，根據該絕緣署的存在防止金屬部份露出 。因此，能夠防止在減壓環境下從導電體放電。 —方面，在支持部3 0 4 B的硬焊部3 〇 4 D之周園 設有冷卻構造。亦即，如此的冷卻構造，係爲了防止在硬 焊部3 0 4 D之熱剝離和在大氣中的支持部3 〇 4 B曝露 在高溫之危險而設置，因此，在挾著支持體3 0 8和硬焊 部3 0 4 D對抗的位置，設有沿周方向之水冷套3 1 2 ， 在該水冷套3 1 2 ，分別連接有使冷卻水循環用的給水， 排水管3 1 4 ，3 1 6。然後》在此係根據該冷卻構造， 使在硬焊部3 0 4 D之溫度，例如，維持在約5 0 0 °C。 如此的冷卻構造，在要求對加熱器之給電部供給很多電流 的插頭端子3 0 4 ，對抑止由溫度上升之硬焊部的破損也 有效。 接著關於動作說明。 處理室2 ，在其製造過程將編入載置台2 1的靜電夾 之電極部2 4 ，2 5及對加熱器2 6的給電部。亦即，在 編入給電部時，將在載置台2 1側埋設插座端子3 0 2。 然後，將對插座端子3 0 2實施表面處理，但是在該表面 處理要把構成導電層之碳層3 ϋ 2 A根據C: V D處理形成 時，係把各插座端子3 0 2中，相當於對靜電夾的電極部 2 4 ，2 5給電之部份3 0 0 a (參照圖2 9 )及相當於 對加熱器2 6給電的部份3 0 0 b (參照圖2 9 )者將同 時處理，在塗層時或其後之形成圖型時將一起做爲配線部 形成。該配線，係在圖3 0 ，由--點鏈線做爲向電極2 4 (請先Μ讀背面之注意事項再填寫本頁) 裝 -6 綉 本紙張尺度適用t國國家梯準（CNS ) Α4规格< 2丨ΟΧ297公釐） 42 _ B? 五、發明説明（40 ) 一~~~~" ，2 5的配線，同時，由二點鏈線做爲向加熱器2 6之配 線顯示。再者，雖然在圖3 0，把雙方的配線爲了方便， 而從同一插座端子3 0 2拉出而顯示，但是，實際上當然 係從對應於上述給電部之插座端子3 () 2拉出。 如此地形成碳層3 0 2 A時，將在該層上，有P — BN (焦一氮化硼）根據CVI)處理塗層而形成絕緣厝 3 0 2B。在此時的表面處理，也和上述之碳層3 0 2A 與靜電夾的電極部2 4 ，2 5間或在加熱器2 6間之配線 —樣，能把靜電夾側的絕緣層一起形成。然後，由於將插 座端子3 0 2之內底部近傍的內周面根據機械加工所切除 ，把絕緣層3 0 2 B去除而將形成接點3 0 2 C。 一方面，對插座端子3 0 2的插頭端子3 0 4之編入 ，將把由於在支持體3 (3 8硬焊的支持部3 0 4 B之前端 閂嵌而一體化的導電部3 0 4 A插人到插座端子3 〇 2之 內部。此時，導電部3 0 4A將由插座端子3 0 2和導電 部3 0 4 A之間的尺寸差而向縮徑之方向一面彎曲而插入 ，將成爲所謂壓入，將會壓\到在導電部3 0 4 A的前端 和插座端子3 0 2的內底部之間設置適當的空隙（在圃 3 1 C以記號P所示之空隙）的位置爲止。 因此，導電部3 0 4 A，將使把彎曲變形之復原時的 力作用在從插座端子3 0 2之接點3 0 2 C至開口爲止白勺 範圍。因此，插座端子3 0 2之內表面和插頭端子3 〇 4 的外表表面之間的空隙將成爲極小之狀態。所以，從接點 3 0 2 C所放出的電子將被限制在其空隙內之撞擊頻度’ 未紙張尺度逋用中國國家標準（0阳）人4洗格（21(^297公:着) (請先閲讀背面之注意事項再填寫本頁 裝. 訂_ 經濟部中央標準局員工消費合作杜印製 s1Q445 A 7 B7 五、發明説明（41 ) ~~ 將會設定成幾乎不能得到平均自由行程的狀態，故將不能 引起電子崩溃現象。據此，將會防止放電現象。 (讀先闖讀背面之注意事項再填寫本頁) 將壓入到插座端子3 0 2之插頭端子3 0 4 ，即使， 將壓入到插座端子3 0 2的導m部3 0 4 A之軸線和支持 部3 0 4 B的軸線在不一致之狀態時，也能夠經由螺旋狀 的切入部3 0 4 B2W使軸線偏移某程度之狀態把導電部 3 〇 4A整合在插座端子3 0 2的位置。因此，即使載置 台2 1側和底板9側之裝配誤差發生時，也能夠使導電部 3 〇 4 A整合到插座端子3 0 2的位置而颸入。 插頭端子3 0 4 ，在結束對插座端子3 0 2之壓入時 ，將由於把支持體3 0 8固定在底板9而結束編入。 一方面，從壓入到插座端子3 0 2的插頭端子3 0 4 ，將對靜電夾用之電極2 4 ，2 5及加熱器2 6進行給電 。此時，將進行從插座端子3 () 2的接點3 0 2 C經由根 據碳層3 0 2 A之配線向各電極2 4 ，2 5及加熱器2 6 的給電。 經濟部中央標準局肩，工消費合作社印裝 根據本形態時，進行從高壓電源之給電時所用的插頭 端子和供給大容量之電力時所甩的插頭端子，將能使之成 爲互相共通的構造。因此，即使給電內容不同時也不必準 備和其適合之端子，故能夠使構造簡化。 並且，因爲能夠對插頭端子採用使插座端子側插入的 裝配程序，故能根據只從上方著裝之簡單的操作進行給電 部之裝配，維修也將變爲簡單。 如此地，根據本形態時，因爲採用在加熱器被給電構 本紙張尺度適用中國國家標準（CNS > A4現格[210X297公釐） 奴濟部中央褲準局員工消費合作社印製 A7 __B7 五、發明説明（42 ) 件形成有底開口，將其底部側做爲導電性之接點，其開口 端側做爲絕綠層的構造之插座端子，在此插入插頭端子而 給電，故能以簡單的構造而減少在此等接點的電子之撞擊 頻度。因此，將能防止由於從接點放出的電子之電子崩溃 現象，故在眞空下配線時也能防止放電。 如此的放電防止效果，將根據插座端子3 0 2的形狀 而異。把該情況根據圖3 4說明。在此將顯示使聚四氣乙 烯製之插座端子3 0 2的帽開η部之深度L和直徑D變化 時，處理室內的眞空度和放電開始電壓之關係。再者，做 爲開口部的深度L係採用1 6 ，2 0 ，2 3 m m，做爲直 徑D係採用必6 . 0 ，6 . 2 5 6 . 4mm。同時，插頭 端子3 0 4之導電部3 0 4 A的長度做爲2 5mm，其露 出部份之長度爲8mm，直徑爲0 5 · ’試驗係在 2 5 °C進行。 從圖3 4顯示，L愈大D愈小，即接點位置深而開口 部的寬度愈窄，將會安定而放電開始電壓會高，亦即，可 知將不容易放電。 根據本形態時，因爲接點以外的插頭端子之表面係由 絕緣層所塗層，故將發揮能夠防止放電之效果。 並且，設在插座端子的導電層’能夠和被給電部之靜 電夾式加熱器的電極部一起塗層°因此，在塗層時或其後 之形成圇型時能夠把插座端子的導電層和各部份之電極或 靜電夾時的絕緣層彙合起來形成。所以，由於能夠不發生 放電而在減壓環境下進行配線’不需要在眞空環境和大氣 本紙張尺度適用中國國家橾準（CNS > A4规格（210X297公餐） .4δ - (請先閲讀背面之注f項再填寫本頁 裝·P — B N and other insulating layers 3 0 2 B. At this time, the contact 3 0 2 C will be formed inside the conductive cap 3 0 2 E. On the one hand, the plug terminal 3 0 4 has a conductive portion 3 0 4 A and a support portion 3 Q 4 B. The conductive part 3 Q 4 A, for example, has a specific standard of China ’s national standard rate (CNS) A4 (2 丨 0X297 published) 39-A 7 B7 V. Invention description (37) 3 0 2 The inner diameter of the contact 3 0 2 C is slightly larger and the outer diameter is formed of tungsten that can maintain a certain degree of elasticity even in a high-temperature environment. Then, the conductive part 3 0 4 A 9 is a gap 3 0 4 A 1 as shown in FIG. 3 3, and at the same time, the force 9 is pressed into the socket terminal 3 0 2 when the bottom of the support member 2 1 C is pressed into the socket terminal 3 0 2 The connection layer 3 0 2 B of terminal 3 0 2 is in close contact with 0 and > because of the gap 3 0 4 position >, it is possible to equalize the pressure at the socket terminal 3 0. This can eliminate the simultaneous pressing of 9 into the socket terminal as shown in the figure As shown in 3 1 C, there is an absorption gap between the inner bottom of the conductive 3 0 2 and the conductive part 3 0 4 A of the support part 3 0 4 B sub 3 0 4 which will be described later. The side of the bulge outwards and the contact point of the conductive part 3 0 4 A sub 3 0 3 0 2 C such as 9 to use S i CS i 0 ffS m 0 according to this 9 will be able to prevent the adjacent- , The support part 3 0 4 3 0 4 A used in the member, in this example, the Ministry of Economic Affairs Central Bureau of Standardization of the consumer cooperation du printed, from the head of the axis of the formation of the gap 3 ΰ 4 A: in that the ratio of the terminal side. Therefore, in the plug terminal 3 0 4, the recovery point 3 〇2 C during bending deformation can be extended to the insulation A that is open downward to the pressure inside the support member 2 1 C under 2 and the excess when the outside of the socket terminal is pressed in resistance. 3 〇 2 within the plug terminal 3 0 4, part 3 i) 4 A head and socket terminal tiny gap (]?). Therefore, the thermal expansion that can occur ◊ In addition, the plug end, in order to obtain the characteristics of close contact with the socket, can also be applied in advance;), in Figure 33, it is placed at the contact socket end 3 () 4 A 2 On the surface, the discharge between the insulated plug terminals is formed by the CVD treatment of Example 2 and the like. B, for fixing the conductive part, it is made of nickel alloy. (Please read the precautions on the back and then fill out this page). V6 This paper standard uses the Chinese national standard ^^ "from the specification 丨 ⑽ tear Public expense) 40 Printed by the Employees Consumer Cooperative of the Central Prototype Bureau of the Ministry of Economic Affairs Μ ___ _ Β7 V. Composition of the invention (38). The support department 3 0 4 B is covered with ceramic tubes 3 G 4 C. Then, the support department 3 Ο The front end of 4B, that is, at the end opposite to the conductive portion 3 Ο 4A, as shown in FIG. 3 3, a columnar protrusion 3 0 4 Bi is formed. Since the protrusion 3 0 4 Βι pair is formed at Conductive portion 3 0 4 A The bottom hole 3 0 4 A 3 is latched, and the support portion 3 〇4 B and the conductive portion 3 0 4 A are integrated. Due to such latching, even if it is close to the heater side When the temperature on the front end side rises and the protrusion 3 0 4 B 1 thermally expands, a stronger connection state can be obtained. At the same time, the support portion 3 0 4 B system makes the lower end a wiring connection portion, and the bottom plate 9 is fixed midway. That is, a ceramic support body 3 0 8 is mounted under the bottom plate 9, and the support body 3 ΰ 8 The inner surface of the part has a support 3 0 4 Β fixed by brazing. The support body 3 0 8 is made of ceramic. In addition to the support part 3 0 4 Β and the external insulation, it is also used in the support part 3 0 4 Β The thermal expansion rate between Barr is close to prevent the peeling of the brazed portion 3 0 4D. At the same time, an oil seal 10 is arranged on the opposite surface of the bottom plate 9 and the support 3 0 8. At the same time, the support portion 3 0 4 In the middle of the axis direction of Β, a cut portion 3 0 4 Β 2 that spirally forms the shaft itself is formed. Based on the cut portion 3 0 4 Β2, the conductive portion 3 0 4 Α and the brazed support portion 3 0 4 Β When the axis is deviated, the conductive part 3 (3 4 can also be integrated into the socket terminal 3 0 2 < = > and the support part 3 0 4 B is from the front end to the position facing the cooling part described later, In other words, on the surface in contact with the decompression environment fan garden, the same as the conductive part 3 Ο 4A, the paper standard of the CVD using S 丨 〇2, S ί N is applicable to the Chinese National Standard (CNS) Α4 specification (2! 0 : < 297 Gong 1 ~ 7 " (please read the precautions on the back first and then fill in this page to install.) _______87 V. Description of the invention (39) An insulating layer is formed to prevent the metal part from being exposed according to the presence of the insulating department. Therefore, it is possible to prevent the discharge from the electrical conductor under a reduced pressure environment. — In the support section 3 0 4 B The surrounding area of the brazed portion 3 〇4 D is provided with a cooling structure. That is, such a cooling structure is to prevent thermal peeling at the brazed portion 304 D and exposure of the support portion 304 B in the atmosphere It is installed in the danger of high temperature. Therefore, a water cooling jacket 3 1 2 along the circumferential direction is provided at the position where the support 3 0 8 and the brazed portion 3 0 4 D face each other, and the water cooling jacket 3 1 2, respectively The feed water for circulating cooling water, the drain pipes 3 1 4 and 3 1 6 are connected. Then, according to this cooling structure, the temperature of 300 D at the brazed portion is maintained at, for example, about 500 ° C. Such a cooling structure is also effective for suppressing damage to the brazed portion due to temperature rise at the plug terminal 3 0 4 that requires a large amount of current to be supplied to the power supply portion of the heater. Next, the operation will be described. In the processing chamber 2, the electrode portions 2 4 and 25 of the electrostatic clamp of the mounting table 21 and the power supply portion to the heater 26 are incorporated in the manufacturing process. That is, when the power supply unit is incorporated, the socket terminal 302 will be buried on the mounting table 21 side. Then, the socket terminal 3 0 2 will be subjected to a surface treatment, but when this surface treatment is to form the carbon layer 3 ϋ 2 A constituting the conductive layer according to the C: VD treatment, each socket terminal 3 0 2 is equivalent to The part that supplies electricity to the electrode portions 2 4 and 2 5 of the electrostatic clamp 3 0 0 a (refer to FIG. 2 9) and the part that supplies electricity to the heater 26 to 3 0 0 b (refer to FIG. 2 9) The treatment is formed as a wiring part at the time of coating or subsequent pattern formation. This wiring is shown in Figure 3 0, and is made of a dot chain line to the electrode 2 4 (please read the precautions on the back before filling in this page). -6 Embroidery paper size is applicable to the national standard of the country (CNS ) Α4 specification < 2 丨 ΟΧ297 mm) 42 _ B? V. Description of invention (40) 1 ~~~~ ", 2 5 wiring, at the same time, the two-point chain line is used as the heater 2 6 Wiring display. In addition, although FIG. 30 shows that the wiring of both sides is pulled out from the same socket terminal 3 0 2 for convenience, it is of course actually pulled out from the socket terminal 3 () 2 corresponding to the above power supply section . When the carbon layer 3 0 2 A is formed in this way, a P—BN (pyro-boron nitride) treatment coating is formed on this layer to form an insulating layer 3 0 2B. The surface treatment at this time can also be formed together with the above-mentioned carbon layer 30 2A and the wiring between the electrode portions 24, 25 of the electrostatic clip or between the heater 26, together with the insulating layer on the electrostatic clip side . Then, since the inner peripheral surface near the inner bottom of the socket terminal 3 0 2 is cut off by machining, the insulating layer 3 0 2 B is removed to form a contact 3 0 2 C. On the one hand, the insertion of the plug terminal 3 0 4 of the socket terminal 3 0 2 will integrate the conductive part 3 0 4 which is integrated by latching the front end of the support 3 (3 8 brazed support part 3 0 4 B A is inserted into the socket terminal 3 〇2. At this time, the conductive portion 3 0 4A will be bent in the direction of diameter reduction and inserted due to the size difference between the socket terminal 3 0 2 and the conductive portion 3 0 4 A, insert This is so-called press-fitting, and it will be pressed to a position where an appropriate gap (the gap indicated by the symbol P in the garden 3 1 C) is provided between the front end of the conductive portion 3 0 4 A and the inner bottom of the socket terminal 3 0 2 Therefore, the conductive portion 3 0 4 A will cause the force at the time of restoring the bending deformation to act from the contact 3 0 2 C of the socket terminal 3 0 2 to the opening. Therefore, the socket terminal 3 0 2 The gap between the inner surface and the outer surface of the plug terminal 3 〇4 will be extremely small. Therefore, the electrons emitted from the contact 3 0 2 C will be limited to the impact frequency of the gap. Use the Chinese National Standard (0 Yang) to wash the grid for 4 people (21 (^ 297) :) (please read the notes on the back before filling in Binding. Order_ s1Q445 A 7 B7 of the Consumers ’Cooperation Cooperation of the Central Bureau of Standards of the Ministry of Economic Affairs. 5. Description of the invention (41) ~~ It will be set to a state where the average free travel can hardly be obtained, so it will not cause the phenomenon of electronic collapse. According to this, the discharge phenomenon will be prevented. (Read the precautions on the back before filling in this page) The plug terminal 3 0 4 that will be pressed into the socket terminal 3 0 2, even if it will be pressed into the socket terminal 3 0 2 When the axis of the guide portion 3 0 4 A and the axis of the support portion 3 0 4 B do not match, the conductive portion 3 can also be shifted by the spiral cut portion 3 0 4 B2W to a certain degree. 4A is integrated at the position of the socket terminal 302. Therefore, even if an assembly error occurs on the mounting table 21 side and the bottom plate 9 side, the conductive portion 304 A can be integrated into the socket terminal 302 and enter The plug terminal 3 0 4 ends the press-fitting of the receptacle terminal 3 0 2 by fixing the support 3 0 8 to the bottom plate 9. On the one hand, the plug from the press-fitting to the receptacle terminal 3 0 2 Terminal 3 0 4, the electrodes 2 4, 2 5 and The power is supplied to the device 26. At this time, the power is supplied to the electrodes 2 4, 2 5 and the heater 2 6 from the contact 3 0 2 C of the socket terminal 3 () 2 via the wiring according to the carbon layer 3 0 2 A The Central Standards Bureau of the Ministry of Economic Affairs, the Industrial and Consumer Cooperatives printed in accordance with this form, the plug terminals used when supplying power from a high-voltage power supply and the plug terminals thrown away when supplying large-capacity power will make it common to each other. structure. Therefore, even if the power supply contents are different, it is not necessary to prepare and suitable terminals, so the structure can be simplified. In addition, since the assembly procedure for inserting the socket terminal side can be used for the plug terminal, the power supply unit can be assembled according to the simple operation of wearing only from above, and maintenance becomes simple. In this way, according to this form, the Chinese national standard (CNS > A4 is now available [210X297mm]) is adopted as the paper standard for the heater is fed to the power. The A7 __B7 is printed by the Consumer Cooperative of the Central Pants of the Ministry of Economy 2. Description of the invention (42) The piece is formed with a bottom opening, the bottom side is used as a conductive contact, and the opening end side is used as a socket terminal with a green layer structure. The plug terminal is inserted here for power supply, so it can be used The simple structure reduces the impact frequency of electrons at these contacts. Therefore, it is possible to prevent the collapse of electrons due to the electrons discharged from the contacts, so that discharge can be prevented even when wiring under the void. Such a discharge prevention effect will vary depending on the shape of the socket terminal 302. This case will be explained based on Fig. 34. Here, when the depth L and the diameter D of the cap opening η portion of the socket terminal 302 made of polytetrafluoroethylene are changed, the relationship between the vacancy in the processing chamber and the discharge start voltage will be shown. In addition, as the depth L of the opening, 16 mm, 20 mm, and 23 mm are used, and as the diameter D of the system, 6.0 mm, 6.25 mm, and 6.4 mm are used. At the same time, the length of the conductive part 3 0 4 A of the plug terminal 3 0 4 is 25 mm, the length of the exposed part is 8 mm, and the diameter is 0 5 · 'The test was conducted at 2 5 ° C. As shown in Fig. 34, the larger L is, the smaller D is, that is, the deeper the contact position and the narrower the width of the opening, the more stable the discharge start voltage will be, that is, it is known that the discharge will not be easy. According to this embodiment, since the surface of the plug terminal other than the contact is coated with the insulating layer, the effect of preventing discharge is exerted. In addition, the conductive layer provided on the socket terminal can be coated together with the electrode part of the electrostatic clip heater of the power feeding part. Therefore, the conductive layer of the socket terminal and The electrodes of each part or the insulating layer at the time of electrostatic clamping are combined to form. Therefore, since it can be wired in a decompression environment without discharge, it does not need to be in the empty environment and the atmosphere. This paper standard is applicable to the Chinese National Standard (CNS> A4 specifications (210X297 meals). 4δ-(please read the back Note f, then fill this page to install ·

1ST ^ί〇445 a? _____ B7 五、發明説明（43 ) 之間的特別之遮斷構造’故能使梅道簡化，據此，能夠減 低配線成本。 同時，在本形態，插座端子的接點，不只是在內底部 近傍之側面，例如，插頭端子的熱膨脹不太大，接觸狀態 不會變化時，也能夠形成在插座端子之底面，此時，只要 使插頭端子的前端對底面具有壓接之習性而接觸即可。 並且，本形態係做爲插座端子，只要具備有底開口的 形狀即可，所以不只是如上述實施例地使用帽套，例如， 在電漿蝕刻裝置之對向電極，載置台爲導電體時，也可以 在載置台設置形成有底開口的凹部。此時，將能夠以有底 開口之底部做爲接點，在有底開口的開口端側形成絕緣層 而得到和上述例相同之作用。 再者，雖然在上述各形態，係關於熱CVD裝置顯示 ，但是並不受此限制，本發明也能夠適用在以電漿C V D 裝置爲首的，其他之眞空處理裝置，例如蝕刻裝置，灰化 裝置，濺散裝置等。 經濟部中央標牟局貝工消费合作社印裝 同時，雖然做爲靜電夾使用將2個導電體做爲電極的 雙極型者，但是，也可以如圖3 5所示’採用做爲電極只 用1個導電體2 4之單極型者。 同時，也可以做爲兼備根據有關第3形態的載置台之 被處理體的分割加熱，和根據有關第4形態之蓮蓬頭的處 理氣體流量之分割控制的圖3 6所示之裝置構成。此時， 將能夠增加控制的參數，而能變增加成膜之均句性。 更且，被處理體並非限於半導體晶片，例如，也可以 46 (請先聞讀背面之注f項再填寫本頁) 本紙张尺度逋用中國國家橾準（0阳）戍4現格（210父297公§) A7 B7 經濟部中央標準局員工消费合作杜印製 五、發明説明（44 ) 舄L C D基板。 此外，能夠在不超出本發明的要旨之範園內進行各種 樂形。 ®面之簡單說明 圖1 ·係將有關本發明的第1形態之頁紙式冷壁型的 CVD裝置模式性地顯示之截面圖， 圖2 ，係說明在圖1的裝置所使用之半導體晶片的載 tt台之構造的截面圖， 圖3 ，爲顯示該載置台之斜視圖， 圖4及圖5 ，爲顯示半導體晶片的升降機之主要部份 的圖， 圖6 ，爲顯示載置台之變形例的截面圖， 圖7 ，係說明根據强生-拉別克力之吸著原理甩之模 式圖， 圖8 ，係把在靜夾，强生·-拉別克力作用之狀態模式 性地顯示的圖， 圖9 ，係顯示在靜電夾之絕綠層，體積電阻係數和靜 電力的關係之圖， 圖1 0 ，係顯示使靜電夾絕緣層的表面粗糙度變化時 ，供給到電極之電壓和漏流的關係之圖表， 圖1 1 ，係顯示使靜電夾絕緣層的表面粗糙度變化時 ，供給到電極之電壓和吸著力的關係之圖表， 圖1 2 ，爲顯示適用在有關本發明的第2形態之 1#先聞讀背面之注$項鼻填寫本頁) 象. 、-·* 木紙浪尺度適用中國國家橾準（CNS ) A4规格（210X297公釐} 47 ^^0445 ^^0445 經 .濟 部 中 央 標 準 消 費 人 杜 印 製 Μ Β7 五、發明説明（45 ) CVD裝置的半導體晶片之載置台的一例之截面圊， 圖1 3Α，爲顯示把溫度察覺器插入圚1 2的載置台 之狀態的截面圓， 圖1 3 Β，爲顯示在習知之，把溫度察覺器插入肖冑 置台的狀態之截面圖， 圖1 4 ，爲顯示適用圖1 2所示的載置台之CVD裝 置的主要部份之截面圖， 圖1 5，爲圖1 4的裝置之水平截面圆， 圚1 6 ，係顯示設在圖1 2所示的載置台之中央加熱 體及側部加熱體的控制系統之方塊圖， 圖1 7 ，爲顯示載置台的更其他例之截面圖， 圖1 8 ，係把有關本發明的第3形態之C V D裝置模 式性地顯示之圖， 圖1 9 ，係把圖1 8的裝置之載置台的載置面及半導 體晶片之多數的加熱領域模式性地顯示之斜視圖， 圖2 0，係顯示從蓮蓬頭向半導體晶片供給處理氣體 時之氣體流速的分佈之圖表， 圖2 1 ，係顯示從蓮蓬頭向半導體晶片供給處理氣體 時的濃度境界層之厚度的分佈之圖表， 圚2 2 ，爲顯示圖1 8之裝置的變形例之截面圖， 圖2 3 ，係把有關本發明的第4形態之C V D裝置模 式性地顯示之截面圖， 圖2 4 ，係把圖2 3的蓮蓬頭擴大而顯示之截面圖’ 圖2 5 ，爲圖2 3的蓮蓬頭之底面圖， (請先聞讀背面之注意事項再填寫本頁) 訂 本紙浪尺度適用中國國家標準（CNS ) Α4乳格（210X29*?公i~y 48 經濟部中央標準局員工消费合作杜印製 A'7 _____ B7 _ 五、發明説明（46) 圖2 6 ，係顯示蓮蓬頭直徑不同時從蓮蓬頭把處理氣 體供給半導髋晶片時之氣體流置的分佈之圆表， 圖2 7 ，爲顯示蓮蓬頭的其他例之截面圖， 圖2 8 ，係顯示有關本發明第5形態的C V D裝置之 截面圖， 圖2 9 ，係顯示安裝在圖2 8的載置台之給電部的位 置之模式圖， 圖3 〇 ，係把圖2 8的給電部擴大而顯示之截面圆， 圖3 1 A〜圖3 1 C，係說明在給電部之插座端子的 表面處理工程用之截面圖， 圖3 2 ，係顯示插座端子的其他例之圖’ 圖3 3 ，係爲了說明給電部之插頭端子的構造甩之斜 視圖， 圖3 4 ，係顯示在使插座端子之開口部的深度及直徑 變化時之眞空度和放電開始電壓的關係之圖’ 圖3 5 ，係顯示裝載單極型之靜電夾的載置台之截面 圖， 圖3 6 ，係顯示在圖1 8的裝置編入圖2 3之蓮蓬頭 的CVD裝置之截面圖。 (請先閱讀背面之注意事項再填寫本頁) 裝· 訂 未紙張尺度適用中國國家標準（CNS ) A4C格（210X297公t ) 491ST ^ ί〇445 a? _____ B7 5. The special blocking structure between the description of inventions (43) can simplify Meidao, and accordingly, can reduce wiring costs. At the same time, in this form, the contact of the socket terminal is not only the side near the inner bottom, for example, when the thermal expansion of the plug terminal is not too large and the contact state does not change, it can also be formed on the bottom surface of the socket terminal. As long as the tip of the plug terminal has a habit of crimping against the bottom surface, it may be contacted. In addition, this form is used as a socket terminal, as long as it has a shape with a bottomed opening, so it is not only used as a cap as in the above embodiment, for example, when the counter electrode of a plasma etching apparatus and the mounting stage are a conductor It is also possible to provide a recess with a bottom opening formed on the mounting table. In this case, the bottom of the bottomed opening can be used as a contact, and an insulating layer can be formed on the opening end side of the bottomed opening to obtain the same effect as the above example. Furthermore, although the above-mentioned forms are shown with respect to the thermal CVD apparatus, it is not limited to this. The present invention can also be applied to plasma CVD apparatuses, and other empty processing apparatuses, such as etching apparatuses, and ashing Device, splash device, etc. At the same time, while printing and printing at the Beigong Consumer Cooperative of the Central Standard Mou Bureau of the Ministry of Economic Affairs, although it is used as an electrostatic clip bipolar type with two conductors as electrodes, it can also be used as an electrode only Use one conductor 2 4 unipolar type. At the same time, it can also be configured as the apparatus shown in Figs. 36, which has both the division heating of the object to be processed according to the mounting table of the third aspect and the division control of the processing gas flow rate according to the shower head of the fourth aspect. At this time, it will be possible to increase the control parameters, and it will be able to increase the uniformity of film formation. Moreover, the object to be processed is not limited to semiconductor wafers, for example, it can also be 46 (please read note f on the back side and then fill out this page). The paper size is based on the Chinese National Standard (0yang) and the 4 format (210 Father 297 public §) A7 B7 The Ministry of Economic Affairs Central Standards Bureau employee consumption cooperation du printed five, invention description (44) 舄 LCD substrate. In addition, various musical forms can be performed within the scope of the scope of the present invention. Brief description of the ® surface FIG. 1 is a cross-sectional view schematically showing a sheet-type cold-wall type CVD apparatus according to the first aspect of the present invention, and FIG. 2 is a diagram illustrating a semiconductor wafer used in the apparatus of FIG. 1 The cross-sectional view of the structure of the mounting table of FIG. 3 is a perspective view showing the mounting table. FIGS. 4 and 5 are views showing the main part of the lifter of the semiconductor wafer. FIG. 6 is the deformation of the mounting table. The cross-sectional view of the example, Fig. 7, is a schematic diagram illustrating the rejection based on the Johnson-Labek absorption principle, and Figure 8 is a diagram schematically showing the state of the action of Johnson-Labeke in the static clamp, Fig. 9 is a graph showing the relationship between volume resistivity and electrostatic force in the green layer of the electrostatic clip. Fig. 10 is a graph showing the voltage and leakage current supplied to the electrode when the surface roughness of the insulating layer of the electrostatic clip is changed. The graph of the relationship, Figure 11, is a graph showing the relationship between the voltage supplied to the electrode and the attraction force when the surface roughness of the electrostatic interlayer insulating layer is changed. Figure 12 shows the second Form 1 # First read the back Note $ item nose fill in this page) Elephant. 、-** Wood paper wave scale is applicable to China National Standard (CNS) A4 specification (210X297mm) 47 ^^ 0445 ^^ 0445 Economics. Ministry of Economy Central Standard Consumer Du Yin Manufacturing ΜB7 5. Description of the invention (45) A cross-sectional view of an example of a mounting table of a semiconductor wafer of a CVD apparatus, FIG. 1 3A, a cross-sectional circle showing a state where a temperature sensor is inserted into the mounting table of the drawing unit 12, FIG. 1 3 Β is a cross-sectional view showing the state of inserting the temperature sensor into the Xiaoxuan stage as shown in the prior art, FIG. 14 is a cross-sectional view showing the main part of the CVD apparatus to which the stage shown in FIG. 12 is applied, FIG. 1 5. It is the horizontal cross-section circle of the device of FIG. 14, 圚 1 6, which is a block diagram showing the control system of the central heating body and the side heating body provided on the mounting table shown in FIG. 12, as shown in FIG. 17. A cross-sectional view showing still another example of a mounting table, FIG. 18 is a diagram schematically showing a CVD apparatus according to a third aspect of the present invention, and FIG. 19 is a loading table of the apparatus of FIG. 18 The oblique view of the heating surface of the mounting surface and most of the semiconductor wafers is schematically displayed, Fig. 20 is a graph showing the distribution of gas flow rate when supplying process gas from the shower head to the semiconductor wafer. Fig. 2 1 is a graph showing the distribution of thickness of the concentration boundary layer when supplying process gas from the shower head to the semiconductor wafer. 2 2 is a cross-sectional view showing a modification of the apparatus of FIG. 18, FIG. 2 3 is a cross-sectional view schematically showing a fourth form of the CVD apparatus of the present invention, FIG. 2 4 is a diagram of FIG. 2 3 Figure 2 5 is the bottom view of the shower head of Figure 23, (please read the precautions on the back and then fill in this page) The standard of the paper wave is applicable to the Chinese National Standard (CNS) Α4 milk Grid (210X29 *? Public i ~ y 48 A'7 _____ B7 _ employee consumption cooperation of the Central Bureau of Standards of the Ministry of Economic Affairs A. 7 _____ B7 _ V. Description of the invention (46) Figure 2 6 shows that when the diameter of the shower head is different, the processing gas is supplied from the shower head A circular table of gas flow distribution during semi-conducting hip wafer, FIG. 2 7 is a cross-sectional view showing another example of a shower head, and FIG. 28 is a cross-sectional view showing a fifth aspect of the CVD apparatus of the present invention, FIG. 2 9, Department of display A schematic view of the position of the power supply unit mounted on the mounting table of FIG. 28. FIG. 3 〇 is a cross-section circle showing the power supply unit of FIG. 28 enlarged, and FIG. 3 1 A to FIG. 3 1 C illustrate the power supply unit. Fig. 3 2 is a cross-sectional view of the surface treatment process of the socket terminal of the Department, Fig. 3 2 is a diagram showing other examples of the socket terminal 'Fig. 3 3 is a perspective view for explaining the structure of the plug terminal of the power supply section, Fig. 3 4, It is a graph showing the relationship between the vacancy and the discharge start voltage when the depth and diameter of the opening of the socket terminal are changed. 'Fig. 3 5 is a cross-sectional view showing a mounting table on which a unipolar electrostatic clip is mounted, Fig. 3 6 Is a cross-sectional view of the CVD apparatus incorporating the shower head of FIGS. 2 and 3 in the apparatus of FIG. 18. (Please read the precautions on the back first and then fill out this page) Binding · Order Unpaper size is applicable to China National Standard (CNS) A4C grid (210X297g) 49

Claims (1)

^10445^ 10445 、申請專利範圍 附件 第83105982號專利申請案 中文申請專利範圍修正本 請 先 閲 讀 背 ιέ 之 注 意 事 項 再 填 本 頁 民國86年3月修正 1 種真空處理裝置，其特徵爲，具有： 在真空下進行處理被處理體的處理室； 和1@在前述處理室內，有載置前述被處理體用的載置 面之載置構件； 和設在前述載置構件的載置面，使前述被處理體吸著 用之靜電吸著裝置； 和將前述被處理體加熱用的加熱裝置； 和對前述處理室供給將被處理體處理用的處理氣體之 處理氣體供給裝置； 前述載置構件，但具有基材，和形成在該基材表面的 第1絕緣靥，和設在第1絕緣層上之第2絕緣層， 經濟部中央梂準局員工消費合作社印製 在前述載置構件的前述載置面側的第1絕緣層和第2 絕緣層之間具有導電層，根據前述第1絕緣層，和前述第 2絕緣層’與前述導電層構成前述靜電吸著裝置， 前述加熱裝置，係具有在和前述載置構件的載置面相 反側之面側的第1絕綠層與第2絕緣層之間所設的加熱體 之真空處理裝置。 2.如申請專利範圍第1項所述之真空處理裝置，其 中，前述載置構件的基材係包含氮化硼（B N )或碳（C 本紙張尺度適用中國國家標準（CNS ) A4*t格（210Χ297公* ) D8 7、申請專利範圍 3 ·如中請專利範圍第1項所述之真空處理裝置，其 中’目υ述載置構件的第1及第2絕緣層爲化學噴鍍（ C V D )膜者。 請 先 閱 讀 背 面 之 注 意 事 項 再 填 本 頁 4 . Φ請專利範圍第〗項所述之真空處理裝置，其 中’前述載置構件的第1絕緣層，係包含從焦-氮化硼（ Ρ — Β Ν ) ’氧化矽（s i 〇 2 ),氮化鋁（A又Ν )， 氧化銘（A $ 2 〇 3 )及氮化矽（s i n )所選擇之材料。 5 ·如申請專利範圍第1項所述之真空處理裝置，其 中’前述載置構件的第2絕緣層，係包含從焦-氮化硼（ P — BN) ’ 氧化矽（Si02)，氮化鋁（Aj?N)， 氧化銘（Aj?203)及氮化矽（s i N)所選擇之材料。 6.—種真空處理裝置，其特徵爲，具有： 在真空下進行處理被處理體的處理室；年 和設在前述處理室內，有載置前述被處理體用的載置 面之載置構件； 和設在前述載置構件的載置面，爲了使前述被處理體 吸著用之靜電吸著裝置；k 經濟部中央標準局貝工消費合作社印製 和爲了將被處理體加熱用之加熱裝置； 和對前述處理室供給處理被處理體用的處理氣體之處 理氣體供給裝置； 前述載置構件，係具有絕緣性的基材，和形成在該基 材表面之絕緣層， 在前述載置構件的前述載置面側之基材和絕緣層之間 有導電層，根據前述基材，和前述絕緣層，和前述導電層 本紙张尺度適用中國國家梂率（CNS ) Μ规格（210X297公釐） _ 2 - 310445 B8 C8 D8 經濟部中央標準局属工消费合作社印策 i、申請專利範圍 構成前述靜電吸著裝置， 前述加熱裝置，具有設在和前述載置構件的載憲面相 反側之面側的基材與絕緣層之間的加熱體者。 7 .如申請專利範圍第6項所述之真空處理裝寶，其 中’前述載置構件的絕緣性基材係包含氮化硼（BN彡。 8 .如申請專利範圍第6項所述之真空處理裝置，其 中，前述載置構件的第1及第2絕緣層爲化學噴鍍（ C V D )膜者。 9. 如申請專利範圍第6項所述之真空處理裝贄，_ 中，前述載置構件的絕緣層，係包含從焦-氮化硼（P _ B N )，氧化矽（S i 0 2 )，氮化鋁（A $ N )，氧化 銘（A J? 2 0 3 )及氮化矽（S i N )所選擇之材料者。 10. —種真空處理裝置，其特黴爲，具有： 在真空下進行處理被處理體的處理室； 和設在前述處理室內，有載置前述被處理體用之載# 面的載置構件； 和爲了將前述被處理體加熱用之加熱裝置； 和對前述處理室供給將被處理體處理用的處理氣體之 處理氣體供給裝置； 前述載置構件，但具有基材，和形成在該基材表面的 絕緣_層， 前述加熱裝置，具有在和前述載置構件的基材之載置 面相反側之面以所定間隔所設的螺旋狀或同心狀之加熱體 {請先閱讀背面之注意事項再填 .本頁j 裝- -•Φ 線- 本紙張尺度適用中國國家標準（CNS ) A4現格（210X297公釐） 3 A8 B8 C8 D8 夂、申請專利範圍 則述基材的厚度’係設定爲比前述加熱體之間隔大者 〇 11·如申請專利範圔第1〇項所述之真空處理裝置 ’其中’更在前述載置構件的載置面具有使前述被處理體 吸著用之靜電吸著裝置者。 12·如申請專利範圍第1〇項所述的真空處理裝置 ’其中，前述載置構件的基材係包含氮化硼（B C )或碳 (C )。 1 3 .如申請專利範圍第1 〇項所述之真空處理裝置 ，其中’前述載置構件之絕緣層爲化學噴鍍（C VD )膜 者。 1 4 ·如申請專利範圍第1 0項所述之真空處理裝置 ’其中，前述載置構件之絕緣層，係包含從焦-氮化硼（ P — B N )，氧化矽（S i 0 2 ) ’ 氮化鋁（A 5 N )， 氧化鋁（Aj^Oa)及氮化矽（S i N)所選擇的材料考 〇 經濟部中央梂準局貝工消費合作社印製 1 5 .如申請專利範圍第1 0項所述之真空處理裝胃 ，其中，前述絕緣層係具有2層構造，前述加熱體， 1术設 在此等2層構造之間者。 1 6 · —種真空處理裝置，其特徽爲，具有： 在真空下進行處理被處理體的處理室； ， 和設在前述處理室內，有爲了載置前述被處理贈用的 載置面之載置構件； 和爲了加熱前述被處理體用的加熱裝置； 本紙張尺度適用中國國家梯準（匚阳）六4規格（2丨0父2们公釐） ^^0445 η _ D8 六、申請專利範圍 $對前述處理室供給處理被處理體用之處理氣體的處 理氣體供給裝置： W述加熱裝置，係具有設在和前述載置構件的載置面 ί目β側之面的中央加熱體，和前述載置構件側部之側部加 熱體者。 17. 如申請專利範圍第16項所述的真空處理裝置 ’其中，前述側部加熱體，係設在前述載置構件之側面者 〇 18. 如申請專利範圍第16項所述的真空處理裝置 ’其中’前述側部加熱體，係設在前述載置構件之側面及 其載置面的周緣部者》 19·如申請專利範圍第16項所述之真空處理裝置 ’其中’前述載置構件，係具有從其下面的周緣部向下方 突出之環狀的腳部，前述中央加熱體，係設在該腳部。 經濟部中央標準局員工消费合作社印製 (請先閱讀背面之注意事項再填寫本頁) 2 0 ·如申請專利範圍第1 6項所述之真空處理裝置 其中’更具有插入在前述載置構件的溫度檢出構件，前 述載置構件之插入溫度檢出構件的部份，係具有設成如從 其表面突出之筒部者。 21.如申請專利範圍第16項所述的真空處理裝置 ’其中，前述中央加熱體係以所定間隔設成螺旋狀或同心 狀，前述載置構件之厚度，係設定爲比前述中央加熱體的 間隔大者。 2 2 . —種真空處理裝置，其特徵爲，具有： 在真空下進行處理被處理體的處理室： 本紙張尺度逋用中國國家標準（CNS)A4規格（210X291?公釐） 經濟部中央揉準局爲工消费合作社印製 Α8 Β8 C8 D8 六'申請專利範圍 和設在前述處理室內’有爲了載置前述被處理體用之 載置面的載置構件； 和設在前述載置構件的載置面，爲了使前述被處理體 吸著用之靜電吸著裝置； 和對前述處理室供給處理被處理髏用之處理氣體的處 理氣體供給裝置； 前述靜電吸著裝置，有將施加高電壓之電極；和介裝 在電極與被處理體之間的絕綠層； 前述絕綠層，係在前述被處理體之處理中體積電阻係 數1 〇β〜1 012Ω · cm，其吸著面的表面粗糙度Ra 爲 〇 - 2 〜3. lAim 者。 23. 如申請專利範圍第22項所述之真空處理裝置 ’其中’前述絕緣層，係在處理前述處理體中體積電阻係 數爲 1 01。〜1 〇iiq · cm 者。 24. 如申請專利範圍第22項所述之真空處理裝置 ’其中’前述絕緣層，係其吸著面的表面粗糙度R a爲 0 . 8 〜1 . 〇 # m 者。 2 5 .如申請專利範圍第2 2項所述之真空處理裝置 ，其中，前述絕緣層，係包含從焦—氮化硼（P- BN) ’氧化矽（S i Ο 2 )，氮化鋁（A J? N )，氧化鋁（ A 5 2 〇 3 )，碳化矽（S i C )及氮化矽（S i N )所選 擇之材料者。 26. —種真空處理裝置，其特徵爲，具有： 在真空下進行處理被處理體的處理室； 本紙張尺度逋用中两國家樑率（CNS) Μ规格（2丨0X297公釐）—6 - (請先閱讀背面之注意事項再填寫本頁) 言 經濟部中央標準局員工消費合作社印製 Λ8 B8 C8 D8 六、申請專利範圍 和設在前述處理室內，有爲了載置前述被處理體用的 載置面之載置構件； 和爲了將前述被處理體加熱用的加熱裝置； 和爲了控制前述加熱裝置用之控制裝置： 和對前述處理室供給了爲了處理前述被處理體用的處 理氣體之處理氣體供給裝置； 前述加熱裝置，係使之有對應於形成在前述載置構件 的載置面成同心狀之多數領域地，設在前述載置構件的多 數加熱體， 前述控制裝置係各別地控制此等加熱體之輸出來使被 形成於被處理體之膜厚可在周邊和中心成均勻者。 27.如申請專利範圍第26項所述的真空處理裝置 ’其中，具有檢出形成在前述載置構件之載置面的多數領 域之各溫度的溫度檢出裝置，前述控制裝置將根據該溫度 檢出裝置之檢出值控制前述加熱體的輸出者。 2 8 .如申請專利範圍第2 6項所述之真空處理裝置 ，其中，具有被處理體載置到前述載置面時，將傳熱媒體 供給到被處理體的背面之傅熱媒體供給裝置者》 29.—種真空處理裝置，其特徵爲，具有： 在真空下進行處理被處理體的處理室； 和設在前述處理室內，有載置前述被處理體用的載置 面之載置構件； 和將前述被處理體加熱用的加熱裝置； 和對前述處理室供給處理被處理體用之處理氣體的處 本紙張尺度逋用中國國家標率（CNS)A4说格（ 210X297公釐> —7 _ <請先聞讀背面之注意事項再填寫本頁) •II A8 B8 C8 D8 310445 夂、申請專利範圍 理氣體供給裝置； 和控制從處理氣體供給裝置之處理氣體供給量用的控 制裝置； 前述處理氣體供給裝置，係設成對向於前述被處理體 ’有區畫成同心狀的多數氣體吐出領域之處理氣體導入構 件， 前述控制裝置，將各別地控制從各領域的氣體吐出量 者。 3 0 .如申請專利範圍第2 9項所述之真空處理裝置 ’其中，前述處理氣體導入構件，具有對應於前述多數的 氣體吐出領域設成同心狀之多數環狀空間，和從此等環狀 空間貫通到前述被處理體側的多數之氣體吐出孔者。 3 1 .如申請專利範圔第3 0項所述的真空處理裝置 ，其中，前述各環狀空間之水平斷面積係實質上相同者。 32. —種真空處理裝置，其特徵爲，具有： 在真空下進行處理被處理體的處理室； 和設在前述處理室內，有載置前述被處理體用之載置 面的載置構件； 和在處理被處理體時將被供給電力之被給電部； 和具有底開口部，和設在其基端側的接點’和形成在 其開口端側之絕緣被覆，將電性地連接在前述被給電部的 插座端子； 和能壓入到該插座端子，而在壓入時將接觸在前述接 點之插頭端子者。 本紙供·尺度適用中國B家橾率（CNS)A4現格（2丨〇><297公*> - 8 - (請先聞讀背面之注意事項再填寫本頁) :装· 訂- 經濟部中央梯準局負工消費合作社印製 經濟部中央梂準局負工消费合作社印11 B8 C8 D8 六、申請專利範圍 33.如申請專利範圍第32項所述之真空處理裝窻 ’其中’前述被給電部爲設在前述載置構件之加熱體者。 3 4 .如申請專利範圍第3 2項所述的真空處理裝寶 ’其中’前述被給電部爲設在前述載置構件之載置面的’ 爲了將前述被處理體吸著用靜電夾者。 35.如申請專利範圍第32項所述的真空處理裝實 ’其中’前述插座端子，係螺合在設置前述被給電部之構 件者。 3 6 ·如申請專利範圍第3 2項所述的真空處理裝貿 ’其中’在前述插座端子之前述開口部，前述接點以外的 領域施有絕緣性塗層者》 37.—種載置台，其特徴爲，具備： 具有載置被處理髗用的載置面之載置構件； 和設在前述載置構件的載置面，使前述被處理體吸著 用的靜電吸著裝置； 和爲了將前述被處理體加熱用之加熱裝置； 前述載置構件，有基材，和形成在該基材表面的第1 絕緣層，和設在第1絕緣層上之第2絕緣曆， 在前述載置構件的前述載置面側的第1絕緣層和第2 絕緣層之間有導電層，根據前述第1絕緣層，和前述第2 絕緣層，與前述導電層構成前述靜電吸著裝置， 前述加熱裝置，有設在和前述載置構件的載置面相反 側之面側的第1絕緣層與第2絕緣層之間的加熱體之，具 有靜電吸著機能及加熱機能者。 本紙張尺度逋用中國困家梯率（CNS>A4洗格（ 210X297公釐）一 9 _ 1請先聞讀背面之注意事項#填寫本貢) 訂 者 A8 B8 C8 D8 申請專利範圍 8 _如申請專利範圍第3 7項所述的載置||，其中 前述載置構件之基材爲包含氮化硼（B N )或碳（c ) 前述 膜者 4 9 .如申請專利範圍第3 7項所述之載置台，其中 載置構件的第1及第2絕緣層爲化學噴鍍（CVD 0 . 前述載置 如申請專 構件的第 )，氧化矽（ A义2 0 3 )及 1 .如申請專 前述載置構件的第 氧化矽（ -B N 化鋁（ 4 經濟部中央標準局負工消費合作社印装 B N 化鋁（ 4 有 和 吸著用 和 刖 面之絕 在 有導電 構成前 A又2 . COST 載置 設在 的靜 爲了 述載 緣層 前述 層， 述靜 0 2^3 及 —種載置 被處理體 前述載置 電吸著裝 將前述被 置構件， 利範圍第3 7項所述之載置台，其中 1絕緣層，係包含從焦-氮化硼（P S i 0 2 )，氮化鋁（Ai?N)，氧 氮化矽（S i N)所選擇之材料者》 利範圍第3 7項所述之載置台，其中 2絕緣層，係包含從焦-氮化硼（p S i 0 2 )，氮化鋁（A5N)，氧 氮化矽（S i N)所選擇之材料者。 台，其特徵爲，具有： 用的載置面之載置構件： 構件的載置面，爲了使前述被處理體 » 處理體加熱用之加熱裝置； 有絕緣性的基材，和形成在該基材表 載置構件的前述載置面側之基材和絕緣層之間 根據前述基材，和前述絕緣層，與前述導電層 電吸著裝置， 本紙張尺Α逍用中國國家橾串（CNS)A4規格U10X297公釐）-10 - (請先閱讀背面之注意事項再填寫本頁) -=° Γ 經濟部中央梂準局貝工消费合作社印製 A8 B8 C8 08 六、申請專利範圍 前述加熱裝置，有設在和前述載置構件的載置面相反 側之面側的基材與絕緣層之間的加熱體，具有靜電吸著機 能及加熱機能者。 4 3 .如申請專利範圍第4 2項所述的載置台，其中 ’前述載置構件的絕緣性基材係包含氮化硼（B N )者。 4 4 .如申請專利範圍第4 2項所述的載置台，其中 *前述載置構件的第1及第2絕緣層爲化學噴鍍（C V D )膜。 4 5 _如申請專利範圍第4 2項所述的載置台，其中 ’前述載置構件之絕緣層，係包含從焦-氮化硼（P -B N )，氧化矽（Si02)，氮化鋁（Aj?N)，氧化 鋁（Aj?203)及氮化矽（s i N)所選擇之材料者。 46. —種載置台，其特徼爲，具備： 有載置被處理體用之載置面的載置構件； 和設在前述載置構件之載置面，使前述被處理體吸著 用的靜電吸著裝置： 和將前述被處理體加熱用之加熱裝置； 前述載置構件，係具有基材，和形成在該基材表面的 絕緣層， 前述加熱裝置，係具有在和前述載置裝置之基材的載 置面相反側之面以決定間隔所設的螺旋狀或同心狀之加熱 Brih 體， 前述基材的厚度，係設定成比前述加熱體之間隔爲大 的具有靜電吸著機能及加熱機能者。 本紙張尺度適用中國國家梯率（CNS > A4規《格（210X297公釐）_ J J — (請先閲讀背面之注意事項再4寫本頁) 裝· 、va一 經濟部中央橾準局属工消费合作社印製 A8 B8 C8 D8 申請專利範圍 4 7，如申請專利範園第4 6項所述之載置台，其中 ’ BU述載置構件的基材係包含氮化硼（b n )或碳（c ) 者。 4 8 .如申請專利範圍第4 6項所述之載置台，其中 ’前述載置構件的絕緣層爲化學噴鍍（C VD )膜者。 4 9 .如申請專利範圍第4 6項所述之載置台，其中 ’前述載置構件的絕緣層，係包含從焦一氮化硼（P 一 B N )，氧化矽（S i 0 2 )，氮化鋁（a交N )，氧化 鋁（Aj?2〇3)及氮化矽（S i N)所選擇之材料者。 5 0 .如申請專利範圍第4 6項所述的載置台，其中 ，前述絕緣層係具有2層構造，前述加熱體，係設在此等 2層的絕緣層之間者- 5 1 .如申請專利範圃第4 6項所述的載置台，其中 ，前述加熱裝置，具有設在前述載置構件的和載置面相反 側之面的中央加熱體，和設在前述載置構件之側部的側部 加熱體。 5 2 ·如申請專利範圍第5 1項所述之載置台，其中 *前述側部加熱體，係設在前述載置構件的側面者。 5 3 ·如申請專利範圍第5 1項所述之載置台，其中 ，前述側部加熱體，係設在前述載置構件的側面及其載置 面之周緣部者。 5 4 .如申請專利範圍第4 6項所述的載置台，其中 ，前述絕緣層，係在處理前述被處理體中體積電阻係數 1 〇β〜1 012Ω · cm，其吸著面的表面粗糙度Ra爲 本紙張尺度逋用中國國家輮率（CNS) A4規，格（210 x 297公釐）-12 (請先閲讀背面之注意事項再填寫本頁) 訂 ABCD 七、申請專利範圍 0. 2 〜3. l^m 者。 5 5 .如申請專利範圍第5 4項所述之載置台，其中 ，前述絕緣層，係在處理前述處理體中體積電阻係數爲 1 010 〜1 〇ηΩ · cm 者。 5 6 .如申請專利範圍第5 4項所述之載置台，其中 ，前述絕緣層，係其吸著面的表面粗糙度Ra爲0. 8〜 1 . 0 β m 者。 5 7 .如申請專利範圍第5 4項所述之載置台，其中 ，前述絕緣層，係包含從焦一氮化硼（P — B N )，氧化 矽（S i 0 2 )，氮化鋁（A N )，氧化鋁（A . $ 2 0 3 )，碳化矽（S i C )及氮化矽（S i Ν )所選擇之材料 者。 (請先閲讀背面之注意事項再填寫本頁) 裝 經濟部中央梯準局貝工消费合作社印製 本紙張尺度逋用t國躏家櫺準（CNS)A4洗格（ 210X297公釐）—13 -、 Appendix to the scope of patent application No. 83105982 Patent application Chinese amendments to the scope of patent application Please read the precautions and then fill this page. In March 1986, a vacuum processing device was revised, which is characterized by: under vacuum A processing chamber for processing the object to be processed; and 1 @ in the processing chamber, a mounting member for mounting the mounting surface for the object to be processed; and a mounting surface provided for the mounting member for the processing An electrostatic adsorption device for body adsorption; and a heating device for heating the object to be processed; and a processing gas supply device for supplying the processing gas for processing the object to the processing chamber; the mounting member, but having The base material, and the first insulating layer formed on the surface of the base material, and the second insulating layer provided on the first insulating layer, printed on the aforementioned placement member printed on the aforementioned placement member There is a conductive layer between the first insulating layer and the second insulating layer on the surface side. According to the first insulating layer, the second insulating layer 'and the conductive layer constitute the static Sorption apparatus, the heating means, the vacuum processing apparatus based on the green insulating layer between the first side and the opposite side of the second insulating layer and the mounting surface of the mounting member provided with the heating body. 2. The vacuum processing device as described in item 1 of the patent application scope, wherein the base material of the mounting member contains boron nitride (BN) or carbon (C This paper scale is applicable to the Chinese National Standard (CNS) A4 * t Grid (210Χ297 public *) D8 7. Patent application scope 3 · The vacuum processing device as described in item 1 of the patent scope, in which the first and second insulating layers of the mounting member are chemically sprayed ( CVD) film. Please read the precautions on the back before filling this page 4. ΦPlease refer to the vacuum treatment device described in item〗, where the first insulating layer of the aforementioned mounting member contains the coke-nitrogen Boronide (Ρ-Β Ν) 'Silicon oxide (si 〇2), aluminum nitride (A and N), oxide oxide (A $ 2 〇3) and silicon nitride (sin) selected materials. 5 · Such as The vacuum processing device as described in item 1 of the patent application scope, wherein the second insulating layer of the aforementioned mounting member includes silicon dioxide (Si02) from coke-boron nitride (P-BN) and aluminum nitride (Aj ? N), the material selected by Oxide Ming (Aj? 203) and Silicon Nitride (si N). 6.—A kind of vacuum The device is characterized by having: a processing chamber for processing the object to be processed under vacuum; a mounting member provided in the processing chamber with a mounting surface for mounting the object to be processed; and a mounting member A mounting surface of the component, an electrostatic adsorption device for absorbing the aforementioned object; k printed by the Beigong Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs and a heating device for heating the object; and the aforementioned treatment A processing gas supply device for supplying a processing gas for processing an object to be processed by the chamber; the mounting member is an insulating base material, and an insulating layer formed on the surface of the base material, on the mounting surface of the mounting member There is a conductive layer between the substrate and the insulating layer on the side. According to the aforementioned substrate, the aforementioned insulating layer, and the aforementioned conductive layer, the paper size is applicable to China National Frame Rate (CNS) Μ Specification (210X297mm) _ 2-310445 B8 C8 D8 The Ministry of Economic Affairs, Central Standards Bureau, Industrial and Consumer Cooperatives, printed policy i, the scope of patent application constitutes the aforementioned electrostatic adsorption device, the aforementioned heating device, has the above and the placement structure The heating body between the substrate on the opposite side of the constitutional surface and the insulating layer. 7. The vacuum treatment package as described in item 6 of the patent application scope, in which the insulating substrate of the aforementioned mounting member It includes boron nitride (BN). 8. The vacuum processing apparatus as described in item 6 of the patent application, wherein the first and second insulating layers of the mounting member are chemical spray (CVD) films. 9 . The vacuum treatment equipment described in item 6 of the patent application scope, the insulating layer of the aforementioned mounting member includes pyro-boron nitride (P _ BN), silicon oxide (S i 0 2), Aluminum nitride (A $ N), oxide Ming (AJ? 2 0 3) and silicon nitride (S i N) selected materials. 10. A vacuum processing apparatus, the special mold of which is: a processing chamber for processing a body to be processed under vacuum; and a mounting member provided in the processing chamber and having a loading surface for mounting the body to be processed ; And a heating device for heating the object to be processed; and a processing gas supply device for supplying the processing gas for processing the object to the processing chamber; the mounting member, but having a base material, and formed on the base The insulating layer on the surface of the material, the heating device has a spiral or concentric heating body provided at a predetermined interval on the side opposite to the mounting surface of the base material of the mounting member {please read the back side first Please fill in the details. This page j Pack--• Φ Line-This paper scale is applicable to the Chinese National Standard (CNS) A4 current grid (210X297 mm) 3 A8 B8 C8 D8 It is set to be larger than the interval between the heating bodies. The vacuum processing apparatus described in item 10 of the patent application patent application 'wherein' has a surface for holding the object to be treated more on the mounting surface of the mounting member The static electricity attracts the device. 12. The vacuum processing apparatus according to item 10 of the patent application scope, wherein the base material of the mounting member contains boron nitride (B C) or carbon (C). 13. The vacuum processing apparatus as described in item 10 of the patent application scope, wherein the insulating layer of the aforementioned mounting member is a chemical spray (C VD) film. 1 4 · The vacuum processing device as described in item 10 of the patent application scope, wherein the insulating layer of the mounting member includes coke-boron nitride (P-BN), silicon oxide (S i 0 2) ”Aluminium nitride (A 5 N), aluminum oxide (Aj ^ Oa) and silicon nitride (S i N) selected materials tested. Printed by the Ministry of Economic Affairs, Central Bureau of Industry, Beigong Consumer Cooperative 1 5. Such as applying for a patent The vacuum-treated stomach according to item 10 of the scope, wherein the insulating layer has a two-layer structure, and the heating body is provided between these two-layer structures. 1 6 ·-A vacuum processing device, the special emblem is, it has: a processing chamber for processing the object to be processed under vacuum;, and a mounting surface in the processing chamber, which has a gift surface for placing the processed object Mounting member; and heating device for heating the object to be treated; the paper size is applicable to the Chinese National Standard (Fuyang) 6.4 specifications (2 丨 0 father 2 mm) ^^ 0445 η _ D8 VI. Application Patent scope: A processing gas supply device for supplying the processing gas for processing the processing object to the processing chamber: the heating device described above is a central heating body provided on the surface β side of the mounting surface of the mounting member , And the side heating body on the side of the aforementioned mounting member. 17. The vacuum processing apparatus according to item 16 of the patent application scope, wherein the side heating body is provided on the side of the mounting member. 18. The vacuum processing apparatus according to item 16 of the patent application scope 'Among them, the side heating body is provided on the side surface of the mounting member and the peripheral portion of the mounting surface thereof "19 · The vacuum processing apparatus as described in item 16 of the patent application range" wherein "the mounting member It has a ring-shaped leg portion protruding downward from the peripheral edge portion of the lower surface, and the central heating body is provided on the leg portion. Printed by the Staff Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs (please read the precautions on the back before filling in this page) 2 0 In the temperature detection member, the portion of the placement member into which the temperature detection member is inserted has a cylindrical portion provided as protruding from its surface. 21. The vacuum processing apparatus according to item 16 of the patent application scope, wherein the central heating system is spirally or concentrically arranged at a predetermined interval, and the thickness of the placing member is set to be shorter than the interval of the central heating body The big one. 2 2. A vacuum processing device, which is characterized by: a processing chamber for processing the object to be processed under vacuum: This paper standard adopts the Chinese National Standard (CNS) A4 specifications (210X291? Mm). The quasi-bureau prints Α8 Β8 C8 D8 for industrial and consumer cooperatives. Six 'Patent application and installed in the aforementioned processing chamber'. There are mounting members for the mounting surface for mounting the object to be processed; and those installed on the aforementioned mounting member A mounting surface, an electrostatic adsorption device for adsorbing the object to be processed; and a processing gas supply device for supplying the processing gas for processing the skull to the processing chamber; the electrostatic adsorption device may have a high voltage applied The electrode; and the green layer interposed between the electrode and the object to be treated; the green layer is the volume resistivity of 1 〇β ~ 1 012 Ω · cm in the treatment of the object to be treated LAim of the surface roughness Ra is 〇-2 ~ 3. lAim. 23. The vacuum processing apparatus as described in Item 22 of the patent application scope, wherein the insulating layer is a volume resistance coefficient of 01 in processing the processed body. ~ 1 〇iiq · cm. 24. The vacuum processing apparatus as described in item 22 of the patent application, where the aforementioned insulating layer is a surface roughness Ra of the suction surface of 0.8 to 1.0 #m. 2 5. The vacuum processing device as described in item 2 of the patent application scope, wherein the insulating layer comprises pyro-boron nitride (P-BN) 'silicon oxide (S i Ο 2), aluminum nitride (AJ? N), aluminum oxide (A 5 2 〇3), silicon carbide (S i C) and silicon nitride (S i N) selected materials. 26. A vacuum processing device, which is characterized by: a processing chamber for processing a body to be processed under vacuum; this paper scale is used in the two countries National beam ratio (CNS) Μ specifications (2 丨 0X297mm) -6 -(Please read the precautions on the back before filling out this page) Printed by the Employee Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economy Λ8 B8 C8 D8 6. The scope of patent application and the installation in the aforementioned processing room are for placing the aforementioned processed body A mounting member of the mounting surface of the; and a heating device for heating the object to be processed; and a control device for controlling the heating device: and supplying a processing gas for processing the object to the processing chamber Process gas supply device; the heating device is provided with a plurality of heating bodies provided on the mounting member corresponding to many fields formed concentrically on the mounting surface of the mounting member, and the control device is each The output of these heating bodies is controlled separately so that the thickness of the film formed on the body to be processed can be uniformed at the periphery and center. 27. The vacuum processing device according to item 26 of the scope of the patent application, which has a temperature detection device that detects each temperature in many fields formed on the mounting surface of the mounting member, and the control device will be based on the temperature The detection value of the detection device controls the output of the aforementioned heating body. 28. The vacuum processing apparatus according to item 26 of the patent application scope, which includes a heat medium supply device that supplies a heat transfer medium to the back surface of the processed body when the processed body is placed on the mounting surface 》 29. A vacuum processing apparatus, characterized by having: a processing chamber for processing the object to be processed under vacuum; and a mounting surface provided in the processing chamber with a mounting surface for mounting the object to be processed Components; and a heating device for heating the object to be processed; and the supply of the processing gas for processing the object to the processing chamber. The paper size is based on the Chinese National Standard (CNS) A4 specification (210X297mm> ; —7 _ < Please read the precautions on the back before filling in this page) • II A8 B8 C8 D8 310445, patent application scope gas supply device; and for controlling the supply amount of process gas from the process gas supply device A control device; the processing gas supply device is a processing gas introduction member provided to face a plurality of gas discharge areas that are drawn concentrically to the object to be processed, the control Set, the amount of discharged individually controlled by the gas from various fields. 30. The vacuum processing apparatus according to item 29 of the patent application scope, wherein the processing gas introduction member has a plurality of annular spaces concentrically arranged corresponding to the majority of the gas discharge area, and The space penetrates to the majority of the gas discharge holes on the side of the object to be processed. 3 1. The vacuum processing apparatus as described in item 30 of the patent application, wherein the horizontal cross-sectional areas of the aforementioned annular spaces are substantially the same. 32. A vacuum processing apparatus, comprising: a processing chamber for processing a body to be processed under vacuum; and a mounting member provided in the processing chamber and having a mounting surface for mounting the body to be processed; And the power feeding part to be supplied with power when processing the object to be processed; and the bottom opening part, and the contact provided on the base end side thereof and the insulating coating formed on the opening end side thereof, to be electrically connected to The socket terminal of the aforementioned power feeding section; and those that can be pressed into the socket terminal and will contact the plug terminal at the aforementioned contact point when pressed. This paper is supplied and the standard is applicable to the Chinese B family rate (CNS) A4 cash (2 丨 〇 < 297 public * >-8-(please read the precautions on the back and then fill out this page): Install · Order -Printed by the Ministry of Economic Affairs, Central Ladder and Accreditation Bureau Cooperative Consumer Cooperative of the Ministry of Economic Affairs, the Central Bureau of Accreditation and Labor Cooperative Cooperative Cooperative 11 B8 C8 D8 VI. Patent application scope 33. Vacuum treatment decoration as described in item 32 of the patent application scope Among them, the aforementioned power-feeding part is a heating body provided on the placing member. 3 4. The vacuum processing equipment as described in item 32 of the patent application scope wherein the aforementioned power-feeding part is provided on the placing member 'The mounting surface' is an electrostatic clamp for attracting the object to be treated. 35. The vacuum treatment described in item 32 of the patent application scope is 'wherein' the socket terminal is screwed to the power supply 3 6 · The vacuum processing equipment described in item 3 2 of the patent application scope "where" has an insulating coating applied to the openings of the socket terminals and the areas other than the contacts "37 .—A kind of mounting table, its special features are: A mounting member having a mounting surface for the treatment target; and an electrostatic adsorption device provided on the mounting surface of the mounting member to attract the object to be processed; and in order to heat the object to be processed Heating device used; the placing member has a base material, and a first insulating layer formed on the surface of the base material, and a second insulating calendar provided on the first insulating layer, on the placing of the placing member There is a conductive layer between the first insulating layer and the second insulating layer on the surface side, and according to the first insulating layer and the second insulating layer, the electrostatic absorbing device is formed with the conductive layer, and the heating device has a The heating body between the first insulating layer and the second insulating layer on the side opposite to the mounting surface of the mounting member has an electrostatic adsorption function and a heating function. This paper standard uses the Chinese trapped ladder Rate (CNS> A4 wash grid (210X297mm) a 9 _ 1 please read the notes on the back # fill in this tribute) Subscriber A8 B8 C8 D8 patent application scope 8 _ as described in item 3 7 of the patent application scope Placement ||, wherein the substrate of the aforementioned placement member is The boron nitride (BN) or carbon (c) contains the aforementioned film 4 9. The mounting table as described in item 37 of the patent application scope, wherein the first and second insulating layers of the mounting member are chemical spraying (CVD 0. The aforementioned placement is as the application of the special component), silicon oxide (A meaning 2 0 3) and 1. If the application of the above-mentioned placement component of the first silicon oxide (-BN aluminum oxide (4 Ministry of Economic Affairs Central Standards Bureau underwork The consumer cooperative printed BN aluminum oxide (4. It has a absorbing function and a cladding surface. There is a conductive structure before A. 2. COST is placed on the static layer. In order to describe the aforementioned layer of the carrier edge layer, the static state 0 2 ^ 3 and — A kind of placement object to be processed The above placement electroabsorption device places the above placement member, and the placement table according to item 37 of the scope, wherein one insulating layer contains pyro-boron nitride (PS i 0 2) , Aluminum nitride (Ai? N), silicon oxynitride (S i N) selected materials "The scope of item 37 in the scope of profit, in which 2 insulating layers, including from coke-boron nitride (P S i 0 2), aluminum nitride (A5N), silicon oxynitride (S i N) selected materials. The table is characterized by: a mounting member having: a mounting surface for: a mounting surface of the member, a heating device for heating the object to be processed »the processing body; an insulating base material, and a substrate formed on the According to the substrate, the insulating layer, and the electrically conductive layer, the substrate between the substrate and the insulating layer on the mounting surface side of the substrate surface mounting member CNS) A4 specification U10X297 mm) -10-(please read the notes on the back before filling in this page)-= ° Γ Printed by the Ministry of Economic Affairs, Central Bureau of Economic and Trade, Beigong Consumer Cooperative A8 B8 C8 08 VI. Scope of Patent Application The heating device has a heating body provided between the base material and the insulating layer on the surface side opposite to the mounting surface of the mounting member, and has an electrostatic adsorption function and a heating function. 4 3. The mounting table according to item 42 of the patent application scope, wherein the insulating base material of the mounting member includes boron nitride (B N). 4 4. The mounting table as described in item 42 of the scope of patent application, wherein * the first and second insulating layers of the mounting member are chemical spray (C V D) films. 4 5 _The mounting table as described in item 42 of the patent application scope, wherein the insulating layer of the aforementioned mounting member includes from pyro-boron nitride (P-BN), silicon oxide (Si02), aluminum nitride (Aj? N), aluminum oxide (Aj? 203) and silicon nitride (si N) selected materials. 46. A kind of mounting table, which is characterized by: a mounting member having a mounting surface for mounting the object to be processed; and a mounting surface provided on the mounting member to allow the object to be adsorbed Electrostatic adsorption device of: and a heating device for heating the object to be processed; the placing member having a base material and an insulating layer formed on the surface of the substrate, the heating device having the The surface opposite to the mounting surface of the substrate of the device is a spiral or concentric heating Brih body set at a determined interval. The thickness of the substrate is set to be larger than the interval of the heating body to have electrostatic attraction Function and heating function. This paper scale is applicable to the Chinese National Gradient (CNS > A4 regulation "Grid (210X297mm) _JJ — (please read the precautions on the back and then write 4 on this page). Industrial and consumer cooperatives printed A8 B8 C8 D8 Patent application scope 4 7, as described in the patent application park item 46 described in the stage, where 'BU said the base material of the mounting member contains boron nitride (bn) or carbon (C). 4 8. The mounting table as described in item 4 of the patent application scope, wherein the insulating layer of the aforementioned mounting member is a chemical spray (C VD) film. 4 9. If the patent application scope item 46. The mounting table according to item 6, wherein the insulating layer of the foregoing mounting member includes pyro-boron nitride (P-BN), silicon oxide (S i 0 2), aluminum nitride (a cross N) , Aluminium oxide (Aj? 2〇3) and silicon nitride (S i N) selected materials. 5 0. Mounting platform as described in the patent application item 46, wherein the insulating layer has 2 The layer structure, the aforementioned heating body, is provided between these two insulating layers-51. The mounting table as described in item 4 of the patent application patent garden, In the above, the heating device includes a central heating body provided on a surface of the placement member opposite to the placement surface, and a side heating body provided on the side portion of the placement member. The mounting table according to item 51, wherein the side heating body is provided on the side of the mounting member. 5 3 · The mounting table according to item 51 of the patent application scope, wherein the side The heating element is provided on the side surface of the mounting member and the peripheral portion of the mounting surface. 5 4. The mounting table according to item 46 of the patent application scope, wherein the insulating layer is used to process the The volume resistivity of the body to be processed is 1 〇β ~ 1 012Ω · cm, and the surface roughness Ra of the absorbing surface is the paper scale. It is based on the China National Retention Rate (CNS) A4 rule, grid (210 x 297 mm)- 12 (Please read the precautions on the back before filling in this page) Order ABCD VII. Those who apply for patents ranging from 0.2 to 3. l ^ m. 5 5. Mounting table as described in item 5 of patent application, where , The aforementioned insulating layer is treated with the volume resistivity of 1 in the treated body 010 〜1 〇ηΩ · cm。 5 6. As claimed in the patent application range item 54, wherein the insulating layer, the surface roughness Ra of the suction surface is 0. 8 ~ 1. 0 β m. 5 7. The mounting table as described in item 54 of the patent application scope, wherein the insulating layer includes pyro-boron nitride (P — BN), silicon oxide (S i 0 2), The materials selected by aluminum nitride (AN), aluminum oxide (A. $ 203), silicon carbide (SiC) and silicon nitride (SiN). (Please read the precautions on the back before filling out this page) Printed on the paper printed by the Beigong Consumer Cooperative of the Central Escalation Bureau of the Ministry of Economic Affairs. The paper size is printed using the National Home Appliance Standard (CNS) A4 (210X297mm)-13 -
TW083105982A 1993-06-24 1994-06-30 TW310445B (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP18085193 1993-06-24
JP18551993 1993-06-29
JP18550293A JP3342118B2 (en) 1993-06-29 1993-06-29 Processing equipment
JP18550393 1993-06-29
JP26441293 1993-09-28

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TW310445B true TW310445B (en) 1997-07-11

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI746468B (en) * 2015-11-26 2021-11-21 日商東洋炭素股份有限公司 Method for manufacturing thin SiC wafer and thin SiC wafer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI746468B (en) * 2015-11-26 2021-11-21 日商東洋炭素股份有限公司 Method for manufacturing thin SiC wafer and thin SiC wafer

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