JP6232329B2 - SiC種結晶の加工変質層の除去方法、SiC種結晶及びSiC基板の製造方法 - Google Patents
SiC種結晶の加工変質層の除去方法、SiC種結晶及びSiC基板の製造方法 Download PDFInfo
- Publication number
- JP6232329B2 JP6232329B2 JP2014074742A JP2014074742A JP6232329B2 JP 6232329 B2 JP6232329 B2 JP 6232329B2 JP 2014074742 A JP2014074742 A JP 2014074742A JP 2014074742 A JP2014074742 A JP 2014074742A JP 6232329 B2 JP6232329 B2 JP 6232329B2
- Authority
- JP
- Japan
- Prior art keywords
- seed crystal
- sic
- sic seed
- affected layer
- work
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000013078 crystal Substances 0.000 title claims description 111
- 238000000034 method Methods 0.000 title claims description 54
- 239000000758 substrate Substances 0.000 title claims description 27
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 238000005530 etching Methods 0.000 claims description 40
- 238000010438 heat treatment Methods 0.000 claims description 30
- 238000005520 cutting process Methods 0.000 claims description 9
- 239000002904 solvent Substances 0.000 claims description 5
- 238000000407 epitaxy Methods 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 10
- 230000008569 process Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 5
- 238000005498 polishing Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000001000 micrograph Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000009036 growth inhibition Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000004943 liquid phase epitaxy Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 238000007666 vacuum forming Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 230000005226 mechanical processes and functions Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/12—Etching in gas atmosphere or plasma
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/12—Liquid-phase epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
- C30B19/04—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux the solvent being a component of the crystal composition
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/02—Heat treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02019—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02378—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02529—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
- H01L21/3247—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering for altering the shape, e.g. smoothing the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Plasma & Fusion (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Thermal Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
30 坩堝
40 SiC種結晶
41 Siプレート
42 炭素フィード基板
Claims (3)
- 準安定溶媒エピタキシー法により、厚み方向に平行な面からa軸方向にSiC単結晶を成長させるための板状のSiC種結晶の、切断加工により生じた加工変質層を除去するための方法であって、
前記SiC種結晶をSi雰囲気下で加熱することで、少なくとも当該SiC種結晶の厚み方向に平行な面を10μm以上エッチングするエッチング工程を含むことを特徴とするSiC種結晶の加工変質層の除去方法。 - 請求項1に記載のSiC種結晶の加工変質層の除去方法により加工変質層が除去されたSiC種結晶。
- 請求項1又は2に記載のSiC種結晶の加工変質層の除去方法で前記SiC種結晶の加工変質層を除去する除去工程と、
前記除去工程で前記加工変質層が除去された前記SiC種結晶を用いて、準安定溶媒エピタキシー法により厚み方向に平行な面からa軸方向にSiC単結晶を成長させる成長工程と、
を含むことを特徴とするSiC基板の製造方法。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014074742A JP6232329B2 (ja) | 2014-03-31 | 2014-03-31 | SiC種結晶の加工変質層の除去方法、SiC種結晶及びSiC基板の製造方法 |
US15/300,597 US20170114475A1 (en) | 2014-03-31 | 2015-03-10 | METHOD FOR REMOVING WORK-AFFECTED LAYER ON SiC SEED CRYSTAL, SiC SEED CRYSTAL, AND SiC SUBSTRATE MANUFACTURING METHOD |
PCT/JP2015/001302 WO2015151412A1 (ja) | 2014-03-31 | 2015-03-10 | SiC種結晶の加工変質層の除去方法、SiC種結晶及びSiC基板の製造方法 |
KR1020167022410A KR101893278B1 (ko) | 2014-03-31 | 2015-03-10 | SiC 종결정의 가공 변질층의 제거 방법, SiC 종결정, 및 SiC 기판의 제조 방법 |
CN201580009773.9A CN106029960B (zh) | 2014-03-31 | 2015-03-10 | SiC籽晶的加工变质层的除去方法、SiC籽晶和SiC基板的制造方法 |
EP15773120.9A EP3128047B1 (en) | 2014-03-31 | 2015-03-10 | Method for removing work-affected layer of sic seed crystal, and sic substrate manufacturing method |
TW104109741A TWI671438B (zh) | 2014-03-31 | 2015-03-26 | SiC(碳化矽)種晶之加工變質層的除去方法、SiC種晶及SiC基板之製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014074742A JP6232329B2 (ja) | 2014-03-31 | 2014-03-31 | SiC種結晶の加工変質層の除去方法、SiC種結晶及びSiC基板の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015196616A JP2015196616A (ja) | 2015-11-09 |
JP6232329B2 true JP6232329B2 (ja) | 2017-11-15 |
Family
ID=54239765
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014074742A Expired - Fee Related JP6232329B2 (ja) | 2014-03-31 | 2014-03-31 | SiC種結晶の加工変質層の除去方法、SiC種結晶及びSiC基板の製造方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20170114475A1 (ja) |
EP (1) | EP3128047B1 (ja) |
JP (1) | JP6232329B2 (ja) |
KR (1) | KR101893278B1 (ja) |
CN (1) | CN106029960B (ja) |
TW (1) | TWI671438B (ja) |
WO (1) | WO2015151412A1 (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107004592B (zh) * | 2014-11-18 | 2020-12-08 | 东洋炭素株式会社 | 碳化硅基板的蚀刻方法及收容容器 |
JP6621304B2 (ja) * | 2015-11-10 | 2019-12-18 | 学校法人関西学院 | 半導体ウエハの製造方法 |
KR102604446B1 (ko) | 2017-03-22 | 2023-11-22 | 토요타 쯔우쇼우 가부시키가이샤 | 개질 SiC 웨이퍼의 제조 방법, 에피택셜층 부착 SiC 웨이퍼, 그의 제조 방법, 및 표면 처리 방법 |
JP2018199591A (ja) * | 2017-05-25 | 2018-12-20 | 東洋炭素株式会社 | SiCウエハの製造方法、エピタキシャルウエハの製造方法、及びエピタキシャルウエハ |
JP6949358B2 (ja) * | 2017-07-28 | 2021-10-13 | 学校法人関西学院 | 単結晶SiCの製造方法、SiCインゴットの製造方法、及びSiCウエハの製造方法 |
JP7300248B2 (ja) * | 2018-07-25 | 2023-06-29 | 株式会社デンソー | SiCウェハ及びSiCウェハの製造方法 |
US20210301421A1 (en) * | 2018-07-25 | 2021-09-30 | Denso Corporation | SiC WAFER AND MANUFACTURING METHOD FOR SiC WAFER |
WO2020059810A1 (ja) * | 2018-09-21 | 2020-03-26 | 東洋炭素株式会社 | デバイス作製用ウエハの製造方法 |
US11972949B2 (en) | 2019-03-05 | 2024-04-30 | Kwansei Gakuin Educational Foundation | SiC substrate manufacturing method and manufacturing device, and method for reducing work-affected layer in sic substrate |
WO2020241541A1 (ja) * | 2019-05-27 | 2020-12-03 | 昭和電工株式会社 | SiC単結晶インゴットの製造方法及びSiC改質シードの製造方法 |
EP4036281A4 (en) * | 2019-09-27 | 2023-08-02 | Kwansei Gakuin Educational Foundation | SIC MONOCRYSTAL MANUFACTURING METHOD, SIC MONOCRYSTAL MANUFACTURING DEVICE, AND SIC MONOCRYSTAL SLICE |
WO2021060367A1 (ja) * | 2019-09-27 | 2021-04-01 | 学校法人関西学院 | SiC基板の製造方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003234313A (ja) | 2002-02-07 | 2003-08-22 | Kansai Tlo Kk | SiC基板表面の平坦化方法 |
JP2007176718A (ja) * | 2005-12-27 | 2007-07-12 | Matsushita Electric Ind Co Ltd | 炭化珪素単結晶の製造方法及び製造装置 |
JP5152887B2 (ja) * | 2006-07-07 | 2013-02-27 | 学校法人関西学院 | 単結晶炭化ケイ素基板の表面改質方法、単結晶炭化ケイ素薄膜の形成方法、イオン注入アニール方法及び単結晶炭化ケイ素基板、単結晶炭化ケイ素半導体基板 |
JP5213096B2 (ja) | 2007-03-23 | 2013-06-19 | 学校法人関西学院 | 単結晶炭化ケイ素の液相エピタキシャル成長方法、単結晶炭化ケイ素基板の製造方法、及び単結晶炭化ケイ素基板 |
JP2009218575A (ja) * | 2008-02-12 | 2009-09-24 | Toyota Motor Corp | 半導体基板の製造方法 |
EP2426238A4 (en) * | 2009-04-30 | 2014-08-27 | Ecotron Co Ltd | METHOD FOR PRODUCING A SIC SUBSTRATE |
JP5464544B2 (ja) | 2009-05-12 | 2014-04-09 | 学校法人関西学院 | エピタキシャル成長層付き単結晶SiC基板、炭素供給フィード基板、及び炭素ナノ材料付きSiC基板 |
EP2471981A4 (en) | 2009-08-27 | 2013-04-17 | Nippon Steel & Sumitomo Metal Corp | SIC MONOCRYSTAL WAFER AND METHOD FOR MANUFACTURING THE SAME |
JP5875143B2 (ja) * | 2011-08-26 | 2016-03-02 | 学校法人関西学院 | 半導体ウエハの製造方法 |
EP2778649B1 (en) * | 2011-11-11 | 2022-01-05 | Kwansei Gakuin Educational Foundation | Method for manufacturing a nanometer standard prototype |
JP5982971B2 (ja) * | 2012-04-10 | 2016-08-31 | 住友電気工業株式会社 | 炭化珪素単結晶基板 |
JP6080075B2 (ja) * | 2013-06-13 | 2017-02-15 | 学校法人関西学院 | SiC基板の表面処理方法 |
JP2017105697A (ja) * | 2015-11-26 | 2017-06-15 | 東洋炭素株式会社 | 薄型のSiCウエハの製造方法及び薄型のSiCウエハ |
-
2014
- 2014-03-31 JP JP2014074742A patent/JP6232329B2/ja not_active Expired - Fee Related
-
2015
- 2015-03-10 EP EP15773120.9A patent/EP3128047B1/en not_active Not-in-force
- 2015-03-10 CN CN201580009773.9A patent/CN106029960B/zh not_active Expired - Fee Related
- 2015-03-10 WO PCT/JP2015/001302 patent/WO2015151412A1/ja active Application Filing
- 2015-03-10 US US15/300,597 patent/US20170114475A1/en not_active Abandoned
- 2015-03-10 KR KR1020167022410A patent/KR101893278B1/ko active IP Right Grant
- 2015-03-26 TW TW104109741A patent/TWI671438B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP3128047A1 (en) | 2017-02-08 |
EP3128047B1 (en) | 2018-09-26 |
KR20160111437A (ko) | 2016-09-26 |
JP2015196616A (ja) | 2015-11-09 |
CN106029960A (zh) | 2016-10-12 |
TWI671438B (zh) | 2019-09-11 |
WO2015151412A1 (ja) | 2015-10-08 |
EP3128047A4 (en) | 2017-04-26 |
CN106029960B (zh) | 2019-07-09 |
KR101893278B1 (ko) | 2018-08-29 |
US20170114475A1 (en) | 2017-04-27 |
TW201606145A (zh) | 2016-02-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6232329B2 (ja) | SiC種結晶の加工変質層の除去方法、SiC種結晶及びSiC基板の製造方法 | |
TWI659463B (zh) | 碳化矽基板之蝕刻方法及收容容器 | |
TWI708873B (zh) | 碳化矽基板之表面處理方法 | |
JP5678721B2 (ja) | 炭化珪素単結晶育成用種結晶及び炭化珪素単結晶の製造方法 | |
WO2019022054A1 (ja) | 単結晶SiCの製造方法、SiCインゴットの製造方法、SiCウエハの製造方法、及び単結晶SiC | |
WO2021025077A1 (ja) | SiC基板の製造方法 | |
TW201542895A (zh) | SiC(碳化矽)基板之表面處理方法、SiC基板及半導體之製造方法 | |
JP2011222750A (ja) | 炭化珪素単結晶ウェハの製造方法及びこの方法で得られた炭化珪素単結晶ウェハ | |
JP5418385B2 (ja) | 炭化珪素単結晶インゴットの製造方法 | |
JP2024038313A (ja) | SiCウエハの製造方法 | |
JP3741283B2 (ja) | 熱処理装置及びそれを用いた熱処理方法 | |
JP6621304B2 (ja) | 半導体ウエハの製造方法 | |
JP2006298722A (ja) | 単結晶炭化ケイ素基板の製造方法 | |
WO2018216657A1 (ja) | SiCウエハの製造方法、エピタキシャルウエハの製造方法、及びエピタキシャルウエハ | |
WO2015012190A1 (ja) | SiC基板の製造方法 | |
WO2020059810A1 (ja) | デバイス作製用ウエハの製造方法 | |
JP4374986B2 (ja) | 炭化珪素基板の製造方法 | |
JP2005314167A (ja) | 炭化珪素単結晶成長用種結晶とその製造方法及びそれを用いた結晶成長方法 | |
JP6883409B2 (ja) | SiC単結晶成長方法、SiC単結晶成長装置及びSiC単結晶インゴット | |
JP7194407B2 (ja) | 単結晶の製造方法 | |
JP4418879B2 (ja) | 熱処理装置及び熱処理方法 | |
JP2006041544A5 (ja) | ||
WO2017104133A1 (ja) | 溶液成長法、台座、及び単結晶SiCの製造方法 | |
JP6628673B2 (ja) | エピタキシャル炭化珪素単結晶ウェハの製造方法 | |
JP2013006740A (ja) | 結晶の製造方法および結晶 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20161018 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20170613 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170810 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20171006 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20171023 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6232329 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |