JP6080075B2 - SiC基板の表面処理方法 - Google Patents
SiC基板の表面処理方法 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims description 148
- 238000000034 method Methods 0.000 title claims description 70
- 238000004381 surface treatment Methods 0.000 title claims description 38
- 238000010438 heat treatment Methods 0.000 claims description 85
- 238000005530 etching Methods 0.000 claims description 46
- 238000005498 polishing Methods 0.000 claims description 42
- 239000000126 substance Substances 0.000 claims description 16
- 238000005229 chemical vapour deposition Methods 0.000 claims description 14
- 238000003672 processing method Methods 0.000 claims 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 57
- 239000010410 layer Substances 0.000 description 54
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 45
- 229910052751 metal Inorganic materials 0.000 description 30
- 239000002184 metal Substances 0.000 description 30
- 239000004065 semiconductor Substances 0.000 description 25
- 230000008569 process Effects 0.000 description 24
- 239000013078 crystal Substances 0.000 description 22
- 238000010586 diagram Methods 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 15
- 229910052799 carbon Inorganic materials 0.000 description 12
- 239000000463 material Substances 0.000 description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 10
- 238000007789 sealing Methods 0.000 description 9
- 229910003468 tantalcarbide Inorganic materials 0.000 description 9
- 238000000089 atomic force micrograph Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 238000005520 cutting process Methods 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 230000007246 mechanism Effects 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000003028 elevating effect Effects 0.000 description 5
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 5
- 125000004432 carbon atom Chemical group C* 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000008188 pellet Substances 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 2
- QIJNJJZPYXGIQM-UHFFFAOYSA-N 1lambda4,2lambda4-dimolybdacyclopropa-1,2,3-triene Chemical compound [Mo]=C=[Mo] QIJNJJZPYXGIQM-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 108010083687 Ion Pumps Proteins 0.000 description 1
- 229910039444 MoC Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910026551 ZrC Inorganic materials 0.000 description 1
- OTCHGXYCWNXDOA-UHFFFAOYSA-N [C].[Zr] Chemical compound [C].[Zr] OTCHGXYCWNXDOA-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- WHJFNYXPKGDKBB-UHFFFAOYSA-N hafnium;methane Chemical compound C.[Hf] WHJFNYXPKGDKBB-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000007666 vacuum forming Methods 0.000 description 1
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- H01L21/0475—Changing the shape of the semiconductor body, e.g. forming recesses
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- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
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- C30B29/36—Carbides
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- C30—CRYSTAL GROWTH
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- Crystals, And After-Treatments Of Crystals (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Description
11 高温真空炉
70 基板
71 エピタキシャル層
114 蓋部
Claims (10)
- 少なくとも表面がSiCの(0001)Si面又は(000−1)C面で構成されるとともにオフ角を有する基板の表面処理方法において、
前記基板に機械研磨や化学機械研磨を行うことで、表面に研磨傷が生じるとともに当該研磨傷の更に内部側にも変質層が生じており、当該基板をSi蒸気圧下で加熱して前記基板の表面から少なくとも10μmを除去することで、前記研磨傷及び前記変質層を除去する第1除去工程を行うことを特徴とするSiC基板の表面処理方法。 - 請求項1に記載のSiC基板の表面処理方法であって、
前記第1除去工程では、温度範囲が1800℃以上2200℃以下であって、Siの圧力が10-2Pa以上で加熱することで、前記基板の表面から少なくとも10μmを除去することを特徴とするSiC基板の表面処理方法。 - 請求項1又は2に記載のSiC基板の表面処理方法であって、
化学気相蒸着法を用いて前記基板の表面に形成されたエピタキシャル層に生じたマクロステップバンチングを、当該基板をSi蒸気圧下で加熱することで除去する第2除去工程を行うことを特徴とするSiC基板の表面処理方法。 - 請求項3に記載のSiC基板の表面処理方法であって、
前記第2除去工程は、前記第1除去工程よりもエッチング速度が遅いことを特徴とするSiC基板の表面処理方法。 - 請求項3又は4に記載のSiC基板の表面処理方法であって、
前記第2除去工程では、温度範囲が1600℃以上2000℃以下であって、Siの圧力が10-3Pa以下で加熱することを特徴とするSiC基板の表面処理方法。 - 請求項3又は4に記載のSiC基板の表面処理方法であって、
前記第1除去工程では温度範囲が2000℃以上2200℃以下であって、前記第2除去工程では温度範囲が1600℃以上2300℃以下の加熱条件で加熱を行うことを特徴とするSiC基板の表面処理方法。 - 請求項6に記載のSiC基板の表面処理方法であって、
前記第1除去工程及び前記第2除去工程では、<11−20>方向又は<1−100>方向のオフ角が4度以下の表面を有する前記基板に対して、前記加熱条件で加熱を行うことを特徴とするSiC基板の表面処理方法。 - 請求項1から5までの何れか一項に記載のSiC基板の表面処理方法であって、
前記基板の表面は、<11−20>方向のオフ角が4度以下の面であることを特徴とするSiC基板の表面処理方法。 - 請求項1から5までの何れか一項に記載のSiC基板の表面処理方法であって、
前記基板の表面は、<1−100>方向のオフ角が4度以下の面であることを特徴とするSiC基板の表面処理方法。 - 請求項1から9までの何れか一項に記載のSiC基板の表面処理方法であって、
前記基板の表面が、SiC分子の積層方向の1周期分であるフルユニットの高さ又は半周期分であるハーフユニットの高さからなるステップで終端していることを特徴とするSiC基板の表面処理方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013125020A JP6080075B2 (ja) | 2013-06-13 | 2013-06-13 | SiC基板の表面処理方法 |
PCT/JP2014/003049 WO2014199615A1 (ja) | 2013-06-13 | 2014-06-06 | SiC基板の表面処理方法 |
US14/897,342 US9978597B2 (en) | 2013-06-13 | 2014-06-06 | Method for treating the surface of a silicon-carbide substrate including a removal step in which a modified layer produced by polishing is removed by heating under Si vapor pressure |
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JP6232329B2 (ja) * | 2014-03-31 | 2017-11-15 | 東洋炭素株式会社 | SiC種結晶の加工変質層の除去方法、SiC種結晶及びSiC基板の製造方法 |
US20170121848A1 (en) * | 2014-03-31 | 2017-05-04 | Toyo Tanso Co., Ltd. | SURFACE TREATMENT METHOD FOR SiC SUBSTRATES, SiC SUBSTRATE, AND SEMICONDUCTOR PRODUCTION METHOD |
CN107004592B (zh) * | 2014-11-18 | 2020-12-08 | 东洋炭素株式会社 | 碳化硅基板的蚀刻方法及收容容器 |
JP2017105697A (ja) * | 2015-11-26 | 2017-06-15 | 東洋炭素株式会社 | 薄型のSiCウエハの製造方法及び薄型のSiCウエハ |
CN109071231B (zh) * | 2016-04-27 | 2022-07-26 | 学校法人关西学院 | 带有石墨烯前驱体的SiC基板的制备方法和SiC基板的表面处理方法 |
CN110431654B (zh) * | 2017-03-22 | 2023-07-21 | 丰田通商株式会社 | 改性SiC晶片的制造方法、附有外延层的SiC晶片、其制造方法、及表面处理方法 |
WO2020059810A1 (ja) * | 2018-09-21 | 2020-03-26 | 東洋炭素株式会社 | デバイス作製用ウエハの製造方法 |
WO2020095872A1 (ja) * | 2018-11-05 | 2020-05-14 | 学校法人関西学院 | SiC半導体基板及びその製造方法及びその製造装置 |
CN111640661B (zh) * | 2019-03-01 | 2024-01-30 | 东京毅力科创株式会社 | 基板处理方法、基板处理装置以及存储介质 |
US20220181149A1 (en) * | 2019-03-05 | 2022-06-09 | Kwansei Gakuin Educational Foundation | METHOD AND DEVICE FOR MANUFACTURING SiC SUBSTRATE, AND METHOD FOR REDUCING MACRO-STEP BUNCHING OF SiC SUBSTRATE |
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EP4403677A2 (en) * | 2019-08-06 | 2024-07-24 | Kwansei Gakuin Educational Foundation | Sic seed crystal and method for producing same, sic ingot produced by growing said sic seed crystal and method for producing same, and sic wafer produced from said sic ingot and sic wafer with epitaxial film and methods respectively for producing said sic wafer and said sic wafer with epitaxial film |
US20220282395A1 (en) * | 2019-08-06 | 2022-09-08 | Kwansei Gakuin Educational Foundation | SiC SUBSTRATE, SiC EPITAXIAL SUBSTRATE, SiC INGOT AND PRODUCTION METHODS THEREOF |
EP4036283A4 (en) * | 2019-09-27 | 2023-10-25 | Kwansei Gakuin Educational Foundation | METHOD FOR PRODUCING A SIC SUBSTRATE |
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EP3943644A1 (en) * | 2020-07-21 | 2022-01-26 | SiCrystal GmbH | Sic crystals with an optimal orientation of lattice planes for fissure reduction and method of producing same |
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TW565630B (en) * | 1999-09-07 | 2003-12-11 | Sixon Inc | SiC wafer, SiC semiconductor device and method for manufacturing SiC wafer |
JP3761546B2 (ja) * | 2003-08-19 | 2006-03-29 | 株式会社Neomax | SiC単結晶基板の製造方法 |
US7300519B2 (en) * | 2004-11-17 | 2007-11-27 | Cree, Inc. | Reduction of subsurface damage in the production of bulk SiC crystals |
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US20110156058A1 (en) * | 2009-02-04 | 2011-06-30 | Hitachi Metals, Ltd. | Silicon carbide monocrystal substrate and manufacturing method therefor |
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