JPWO2020203516A1 - - Google Patents

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Publication number
JPWO2020203516A1
JPWO2020203516A1 JP2021511518A JP2021511518A JPWO2020203516A1 JP WO2020203516 A1 JPWO2020203516 A1 JP WO2020203516A1 JP 2021511518 A JP2021511518 A JP 2021511518A JP 2021511518 A JP2021511518 A JP 2021511518A JP WO2020203516 A1 JPWO2020203516 A1 JP WO2020203516A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2021511518A
Other versions
JP7541642B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2020203516A1 publication Critical patent/JPWO2020203516A1/ja
Application granted granted Critical
Publication of JP7541642B2 publication Critical patent/JP7541642B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
JP2021511518A 2019-03-29 2020-03-25 温度勾配反転手段を備える半導体基板の製造装置及び半導体基板の製造方法 Active JP7541642B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019069278 2019-03-29
JP2019069278 2019-03-29
PCT/JP2020/013202 WO2020203516A1 (ja) 2019-03-29 2020-03-25 温度勾配反転手段を備える半導体基板の製造装置及び半導体基板の製造方法

Publications (2)

Publication Number Publication Date
JPWO2020203516A1 true JPWO2020203516A1 (ja) 2020-10-08
JP7541642B2 JP7541642B2 (ja) 2024-08-29

Family

ID=72668171

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021511518A Active JP7541642B2 (ja) 2019-03-29 2020-03-25 温度勾配反転手段を備える半導体基板の製造装置及び半導体基板の製造方法

Country Status (6)

Country Link
US (1) US12014939B2 (ja)
EP (1) EP3951026A4 (ja)
JP (1) JP7541642B2 (ja)
CN (1) CN114174570B (ja)
TW (1) TWI827826B (ja)
WO (1) WO2020203516A1 (ja)

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5989340A (en) * 1995-11-14 1999-11-23 Siemens Aktiengesellschaft Process and device for sublimation growing of silicon carbide monocrystals
JP3698109B2 (ja) * 2002-02-21 2005-09-21 住友電気工業株式会社 Ｉｉ−ｖｉ族化合物半導体結晶の成長方法
SE537049C2 (sv) * 2008-12-08 2014-12-16 Ii Vi Inc Process och apparat för tillväxt via axiell gradienttransport (AGT) nyttjande resistiv uppvärmning
JP5806734B2 (ja) * 2010-06-30 2015-11-10 クリスタル アイエス, インコーポレーテッドCrystal Is, Inc. 熱勾配制御による窒化アルミニウム大単結晶成長
JP5875143B2 (ja) 2011-08-26 2016-03-02 学校法人関西学院 半導体ウエハの製造方法
JP2013075789A (ja) * 2011-09-30 2013-04-25 Fujikura Ltd 化合物半導体単結晶の製造装置および製造方法
JP6080075B2 (ja) * 2013-06-13 2017-02-15 学校法人関西学院 ＳｉＣ基板の表面処理方法
JP6372310B2 (ja) * 2014-10-30 2018-08-15 株式会社デンソー 化学気相成長装置に用いられるサセプタおよびそれを備えた化学気相成長装置
CN107004592B (zh) 2014-11-18 2020-12-08 东洋炭素株式会社 碳化硅基板的蚀刻方法及收容容器
EP3353339A4 (en) 2015-09-24 2019-05-08 Melior Innovations Inc. STEAM-VAPOR DEPOSITION APPARATUS AND TECHNIQUES USING SILICON CARBIDE DERIVED FROM HIGH-PURITY POLYMER
JP6593212B2 (ja) 2015-09-30 2019-10-23 住友電気工業株式会社 炭化珪素単結晶の製造方法
EP3892762A1 (en) * 2016-04-28 2021-10-13 Kwansei Gakuin Educational Foundation Vapour-phase epitaxial growth method, and method for producing substrate equipped with epitaxial layer
JP2018158858A (ja) 2017-03-22 2018-10-11 日本電信電話株式会社 結晶成長方法および装置
KR102604446B1 (ko) * 2017-03-22 2023-11-22 토요타 쯔우쇼우 가부시키가이샤 개질 SiC 웨이퍼의 제조 방법, 에피택셜층 부착 SiC 웨이퍼, 그의 제조 방법, 및 표면 처리 방법

Also Published As

Publication number Publication date
EP3951026A1 (en) 2022-02-09
CN114174570A (zh) 2022-03-11
TWI827826B (zh) 2024-01-01
CN114174570B (zh) 2024-04-30
JP7541642B2 (ja) 2024-08-29
US20220189797A1 (en) 2022-06-16
TW202044373A (zh) 2020-12-01
EP3951026A4 (en) 2022-12-21
WO2020203516A1 (ja) 2020-10-08
US12014939B2 (en) 2024-06-18

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