JP6057292B2 - SiC半導体素子の製造方法 - Google Patents
SiC半導体素子の製造方法 Download PDFInfo
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- JP6057292B2 JP6057292B2 JP2013125018A JP2013125018A JP6057292B2 JP 6057292 B2 JP6057292 B2 JP 6057292B2 JP 2013125018 A JP2013125018 A JP 2013125018A JP 2013125018 A JP2013125018 A JP 2013125018A JP 6057292 B2 JP6057292 B2 JP 6057292B2
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- 239000004065 semiconductor Substances 0.000 title claims description 82
- 238000000034 method Methods 0.000 title claims description 65
- 238000004519 manufacturing process Methods 0.000 title claims description 62
- 239000000758 substrate Substances 0.000 claims description 123
- 238000010438 heat treatment Methods 0.000 claims description 94
- 150000002500 ions Chemical class 0.000 claims description 46
- 238000005530 etching Methods 0.000 claims description 44
- 238000005498 polishing Methods 0.000 claims description 42
- 238000005468 ion implantation Methods 0.000 claims description 22
- 238000001994 activation Methods 0.000 claims description 20
- 230000004913 activation Effects 0.000 claims description 10
- 238000005229 chemical vapour deposition Methods 0.000 claims description 8
- 230000003213 activating effect Effects 0.000 claims description 3
- 239000007791 liquid phase Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 77
- 229910010271 silicon carbide Inorganic materials 0.000 description 50
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 40
- 229910052751 metal Inorganic materials 0.000 description 32
- 239000002184 metal Substances 0.000 description 32
- 230000008569 process Effects 0.000 description 32
- 239000013078 crystal Substances 0.000 description 24
- 229910052799 carbon Inorganic materials 0.000 description 18
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 14
- 238000010586 diagram Methods 0.000 description 13
- 239000000463 material Substances 0.000 description 12
- 239000000126 substance Substances 0.000 description 11
- 238000007789 sealing Methods 0.000 description 9
- 229910003468 tantalcarbide Inorganic materials 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 230000002950 deficient Effects 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 230000007246 mechanism Effects 0.000 description 6
- 238000001000 micrograph Methods 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000003028 elevating effect Effects 0.000 description 5
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 150000001721 carbon Chemical group 0.000 description 3
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- 238000011282 treatment Methods 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
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- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000008188 pellet Substances 0.000 description 2
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- 230000005855 radiation Effects 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 2
- QIJNJJZPYXGIQM-UHFFFAOYSA-N 1lambda4,2lambda4-dimolybdacyclopropa-1,2,3-triene Chemical compound [Mo]=C=[Mo] QIJNJJZPYXGIQM-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 108010083687 Ion Pumps Proteins 0.000 description 1
- 229910039444 MoC Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910026551 ZrC Inorganic materials 0.000 description 1
- OTCHGXYCWNXDOA-UHFFFAOYSA-N [C].[Zr] Chemical compound [C].[Zr] OTCHGXYCWNXDOA-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- WHJFNYXPKGDKBB-UHFFFAOYSA-N hafnium;methane Chemical compound C.[Hf] WHJFNYXPKGDKBB-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
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- 238000007666 vacuum forming Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Description
また、図20には、機械研磨による研磨傷及び変質層を示すSiC単結晶基板の模式的な断面形状と、研磨傷及び変質層を除去するための方法及びその所要時間とが示されている。
11 高温真空炉
70 基板
71 エピタキシャル層
72 イオン注入部分
73 電極
114 蓋部
Claims (11)
- 少なくとも表面がSiC層で構成されるとともにオフ角を有する基板を用いた半導体素子の製造方法において、
前記基板には、機械研磨を行うことで、表面に研磨傷が生じるとともに当該研磨傷の更に内部側にも変質層が生じており、当該基板をSi蒸気圧下で加熱して前記基板の表面から少なくとも10μmを除去することで、前記研磨傷及び前記変質層を除去する第1除去工程と、
前記研磨傷及び前記変質層を除去した前記基板にエピタキシャル層を形成するエピタキシャル層形成工程と、
前記エピタキシャル層にイオンを注入するイオン注入工程と、
前記基板を加熱してイオンを活性化するイオン活性化工程と、
前記イオン活性化工程が行われた前記基板表面のイオン注入不足部分、及び、前記イオン活性化工程で前記基板の表面に発生するマクロステップバンチングを、当該基板をSi蒸気圧下で加熱することで除去する第2除去工程と、
前記第2除去工程により前記イオン注入不足部分及び前記マクロステップバンチングが除去された前記基板に電極を形成する電極形成工程と、
を含むことを特徴とする半導体素子の製造方法。 - 請求項1に記載の半導体素子の製造方法であって、
前記第1除去工程では、温度範囲が1800℃以上2300℃以下であって、Siの圧力が
10-2Pa以上で加熱することを特徴とする半導体素子の製造方法。 - 請求項1又は2に記載の半導体素子の製造方法であって、
前記エピタキシャル層形成工程では、化学蒸気蒸着法を用いてエピタキシャル層を形成することを特徴とする半導体素子の製造方法。 - 請求項1又は2に記載の半導体素子の製造方法であって、
前記エピタキシャル層形成工程では、液相エピタキシャル法を用いてエピタキシャル層を形成することを特徴とする半導体素子の製造方法。 - 請求項1から4までの何れか一項に記載の半導体素子の製造方法であって、
前記イオン活性化工程では、温度範囲が1800℃以上2300℃以下であって、Siの圧力が
10-3Pa以下で加熱することを特徴とする半導体素子の製造方法。 - 請求項1から5までの何れか一項に記載の半導体素子の製造方法であって、
前記第2除去工程では、温度範囲が1600℃以上2000℃以下であって、Siの圧力が
10-3Pa以下で加熱することを特徴とする半導体素子の製造方法。 - 請求項1から6までの何れか一項に記載の半導体素子の製造方法であって、
前記SiC層の表面は、<11−20>方向のオフ角が4度以下の面であることを特徴とする半導体素子の製造方法。 - 請求項1から7までの何れか一項に記載の半導体素子の製造方法であって、
前記SiC層の表面は、<1−100>方向のオフ角が4度以下の面であることを特徴とする半導体素子の製造方法。 - 請求項1から8までの何れか一項に記載の半導体素子の製造方法であって、
前記SiC層の表面が、SiC分子の積層方向の1周期分であるフルユニットの高さ又は半周期分であるハーフユニットの高さからなるステップで終端していることを特徴とする半導体素子の製造方法。 - 請求項1から9までの何れか一項に記載の半導体素子の製造方法であって、
前記電極形成工程と前記第2除去工程を同一の加熱装置を用いて連続的に行うことを特徴とする半導体素子の製造方法。 - 請求項1から10までの何れか一項に記載の半導体素子の製造方法であって、
Siの圧力、加熱温度、及びエッチング速度を含んで構成される加熱条件と、マクロステップバンチングの発生の有無と、の関係性を考慮して、前記第1除去工程及び前記第2除去工程のうち少なくとも何れかにおける前記加熱条件が決定されることを特徴とする半導体素子の製造方法。
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