JP2015002218A - SiC基板の表面処理方法 - Google Patents
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Abstract
Description
11 高温真空炉
70 基板
71 エピタキシャル層
114 蓋部
Claims (10)
- 少なくとも表面がSiC(0001)面で構成されるとともにオフ角を有する基板の表面処理方法において、
前記基板に機械的研磨や化学機械研磨を行うことで生じた変質層を、当該基板をSi蒸気圧下で加熱することで除去する第1除去工程を行うことを特徴とするSiC基板の表面処理方法。 - 請求項1に記載のSiC基板の表面処理方法であって、
前記第1除去工程では、温度範囲が1800℃以上2200℃以下であって、Siの圧力が10-2Pa以上で加熱することを特徴とするSiC基板の表面処理方法。 - 請求項1又は2に記載のSiC基板の表面処理方法であって、
化学気相蒸着法を用いて前記基板の表面に形成されたエピタキシャル層に生じたマクロステップバンチングを、当該基板をSi蒸気圧下で加熱することで除去する第2除去工程を行うことを特徴とするSiC基板の表面処理方法。 - 請求項3に記載のSiC基板の表面処理方法であって、
前記第2除去工程は、前記第1除去工程よりもエッチング速度が遅いことを特徴とするSiC基板の表面処理方法。 - 請求項3又は4に記載のSiC基板の表面処理方法であって、
前記第2除去工程では、温度範囲が1600℃以上2000℃以下であって、Siの圧力が10-3Pa以下で加熱することを特徴とするSiC基板の表面処理方法。 - 請求項3から5までの何れか一項に記載のSiC基板の表面処理方法であって、
Siの圧力、加熱温度、及びエッチング速度を含んで構成される加熱条件と、マクロステップバンチングの発生の有無と、の関係性を考慮して、前記第1工程及び前記第2除去工程のうち少なくとも何れかにおける前記加熱条件が決定されることを特徴とするSiC基板の表面処理方法。 - 請求項6に記載のSiC基板の表面処理方法であって、
前記基板のオフ角を更に考慮して、前記加熱条件が決定されることを特徴とするSiC基板の表面処理方法。 - 請求項1から7までの何れか一項に記載のSiC基板の表面処理方法であって、
前記SiC層の表面は、<11−20>方向のオフ角が4度以下の面であることを特徴とするSiC基板の表面処理方法。 - 請求項1から8までの何れか一項に記載のSiC基板の表面処理方法であって、
前記SiC層の表面は、<1−100>方向のオフ角が4度以下の面であることを特徴とするSiC基板の表面処理方法。 - 請求項1から9までの何れか一項に記載のSiC基板の表面処理方法であって、
前記SiC層の表面が、SiC分子の積層方向の1周期分であるフルユニットの高さ又は半周期分であるハーフユニットの高さからなるステップで終端していることを特徴とするSiC基板の表面処理方法。
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JP2013125020A JP6080075B2 (ja) | 2013-06-13 | 2013-06-13 | SiC基板の表面処理方法 |
US14/897,342 US9978597B2 (en) | 2013-06-13 | 2014-06-06 | Method for treating the surface of a silicon-carbide substrate including a removal step in which a modified layer produced by polishing is removed by heating under Si vapor pressure |
PCT/JP2014/003049 WO2014199615A1 (ja) | 2013-06-13 | 2014-06-06 | SiC基板の表面処理方法 |
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Cited By (4)
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JP2017105697A (ja) * | 2015-11-26 | 2017-06-15 | 東洋炭素株式会社 | 薄型のSiCウエハの製造方法及び薄型のSiCウエハ |
JPWO2018174105A1 (ja) * | 2017-03-22 | 2020-01-30 | 東洋炭素株式会社 | 改質SiCウエハの製造方法、エピタキシャル層付きSiCウエハ、その製造方法、及び表面処理方法 |
JP2022021315A (ja) * | 2020-07-21 | 2022-02-02 | サイクリスタル ゲーエムベーハー | 亀裂低減に最適な格子面配向を持つSiC結晶およびその製造方法 |
JP2022028610A (ja) * | 2020-07-21 | 2022-02-16 | サイクリスタル ゲーエムベーハー | 亀裂低減に最適な格子面配向を持つSiC結晶基板およびその製造方法 |
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JP6232329B2 (ja) * | 2014-03-31 | 2017-11-15 | 東洋炭素株式会社 | SiC種結晶の加工変質層の除去方法、SiC種結晶及びSiC基板の製造方法 |
WO2015151413A1 (ja) * | 2014-03-31 | 2015-10-08 | 東洋炭素株式会社 | SiC基板の表面処理方法、SiC基板、及び半導体の製造方法 |
JP6751874B2 (ja) * | 2014-11-18 | 2020-09-09 | 東洋炭素株式会社 | SiC基板のエッチング方法 |
WO2017188382A1 (ja) * | 2016-04-27 | 2017-11-02 | 学校法人関西学院 | グラフェン前駆体付きSiC基板の製造方法及びSiC基板の表面処理方法 |
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WO2020095872A1 (ja) * | 2018-11-05 | 2020-05-14 | 学校法人関西学院 | SiC半導体基板及びその製造方法及びその製造装置 |
CN111640661B (zh) * | 2019-03-01 | 2024-01-30 | 东京毅力科创株式会社 | 基板处理方法、基板处理装置以及存储介质 |
EP3936645A4 (en) * | 2019-03-05 | 2022-11-09 | Kwansei Gakuin Educational Foundation | METHOD AND APPARATUS FOR MANUFACTURING A SIC SUBSTRATE, AND METHOD FOR REDUCING MACRO-LEVEL BUNTING IN A SIC SUBSTRATE |
WO2020203516A1 (ja) * | 2019-03-29 | 2020-10-08 | 学校法人関西学院 | 温度勾配反転手段を備える半導体基板の製造装置及び半導体基板の製造方法 |
EP4012079A4 (en) * | 2019-08-06 | 2023-06-21 | Kwansei Gakuin Educational Foundation | SIC SUBSTRATE, SIC EPITALIAL SUBSTRATE, SIC BAR AND METHOD OF PRODUCTION |
JPWO2021025084A1 (ja) * | 2019-08-06 | 2021-02-11 | ||
US20220344152A1 (en) * | 2019-09-27 | 2022-10-27 | Kwansei Gakuin Educational Foundation | Method for manufacturing sic substrate |
JPWO2021060368A1 (ja) * | 2019-09-27 | 2021-04-01 | ||
EP4056739B1 (en) * | 2021-03-11 | 2023-12-27 | Kiselkarbid i Stockholm AB | Method of growing high-quality single crystal silicon carbide |
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JP2022021315A (ja) * | 2020-07-21 | 2022-02-02 | サイクリスタル ゲーエムベーハー | 亀裂低減に最適な格子面配向を持つSiC結晶およびその製造方法 |
JP2022028610A (ja) * | 2020-07-21 | 2022-02-16 | サイクリスタル ゲーエムベーハー | 亀裂低減に最適な格子面配向を持つSiC結晶基板およびその製造方法 |
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US9978597B2 (en) | 2018-05-22 |
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