JP4827963B2 - 炭化珪素の研磨液及びその研磨方法 - Google Patents
炭化珪素の研磨液及びその研磨方法 Download PDFInfo
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- JP4827963B2 JP4827963B2 JP2009282083A JP2009282083A JP4827963B2 JP 4827963 B2 JP4827963 B2 JP 4827963B2 JP 2009282083 A JP2009282083 A JP 2009282083A JP 2009282083 A JP2009282083 A JP 2009282083A JP 4827963 B2 JP4827963 B2 JP 4827963B2
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- Japan
- Prior art keywords
- polishing
- manganese dioxide
- silicon carbide
- slurry
- manganese
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000005498 polishing Methods 0.000 title claims description 62
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 27
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 25
- 238000000034 method Methods 0.000 title claims description 13
- 239000007788 liquid Substances 0.000 title claims description 11
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 claims description 102
- 239000002245 particle Substances 0.000 claims description 24
- 230000033116 oxidation-reduction process Effects 0.000 claims description 11
- 239000000725 suspension Substances 0.000 claims description 5
- 239000007864 aqueous solution Substances 0.000 claims description 3
- 239000000243 solution Substances 0.000 claims description 2
- 239000002002 slurry Substances 0.000 description 24
- 239000011572 manganese Substances 0.000 description 17
- 230000000052 comparative effect Effects 0.000 description 16
- GEYXPJBPASPPLI-UHFFFAOYSA-N manganese(iii) oxide Chemical compound O=[Mn]O[Mn]=O GEYXPJBPASPPLI-UHFFFAOYSA-N 0.000 description 14
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 12
- 239000000843 powder Substances 0.000 description 12
- 239000000758 substrate Substances 0.000 description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 238000000227 grinding Methods 0.000 description 8
- 238000007517 polishing process Methods 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 6
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 6
- 229910052748 manganese Inorganic materials 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 239000008119 colloidal silica Substances 0.000 description 4
- 238000006479 redox reaction Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000007561 laser diffraction method Methods 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 238000010298 pulverizing process Methods 0.000 description 2
- 238000000790 scattering method Methods 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009837 dry grinding Methods 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229940099596 manganese sulfate Drugs 0.000 description 1
- 239000011702 manganese sulphate Substances 0.000 description 1
- 235000007079 manganese sulphate Nutrition 0.000 description 1
- SQQMAOCOWKFBNP-UHFFFAOYSA-L manganese(II) sulfate Chemical compound [Mn+2].[O-]S([O-])(=O)=O SQQMAOCOWKFBNP-UHFFFAOYSA-L 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Description
of Electrochemical Equilibria in Aqueous Solutions, Marcel Pourbaix, Pergamon
Press Cebelcor(1996)>から知られているように、pHとその酸化還元電位値により、二酸化マンガン(MnO2)、三酸化二マンガン(Mn2O3)や、四酸化三マンガン(Mn3O4)、過マンガン酸イオン(MnO4 −)となる。従来の二酸化マンガンを使用した研磨方法においては、二酸化マンガン単独の状態ではなく、焼成や化学反応などにより、三酸化二マンガン(Mn2O3)や過マンガン酸イオン(MnO4 −)と二酸化マンガンとが混合した状態で、研磨処理が行われていた。特に、特許文献3では、積極的に三酸化二マンガン(Mn2O3)を形成しうる酸化還元電位やpHに調整することにより、炭化珪素を研磨するものである。これに対して、本発明者らの研究によると、意図的に二酸化マンガンが存在する状態に維持した研磨液により炭化珪素を研磨すると、その研磨能率が飛躍的に向上することが判明したのである。
Claims (4)
- pH6.5以上で、二酸化マンガンの粒子が懸濁された懸濁液からなることを特徴とする炭化珪素の研磨液。
- 二酸化マンガンとして存在できる範囲の酸化還元電位とした水溶液中に二酸化マンガンの粒子が懸濁された請求項1に記載の炭化珪素の研磨液。
- 酸化還元電位Vは、pHを変数としたV、pHの関係式;
1.014−0.0591pH≦V≦1.620−0.0743pHの範囲であり、
pHはpH6.5以上である請求項2に記載の炭化珪素の研磨液。 - 請求項1乃至3のいずれか1項に記載の炭化珪素の研磨液を用いた炭化珪素の研磨方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009282083A JP4827963B2 (ja) | 2009-12-11 | 2009-12-11 | 炭化珪素の研磨液及びその研磨方法 |
EP10835820.1A EP2511358B1 (en) | 2009-12-11 | 2010-11-18 | Polishing slurry for silicon carbide and polishing method therefor |
US13/514,683 US20120240479A1 (en) | 2009-12-11 | 2010-11-18 | Polishing slurry for silicon carbide and polishing method therefor |
PCT/JP2010/070549 WO2011070898A1 (ja) | 2009-12-11 | 2010-11-18 | 炭化珪素の研磨液及びその研磨方法 |
TW099142954A TWI424051B (zh) | 2009-12-11 | 2010-12-09 | 碳化矽之研磨液及其研磨方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009282083A JP4827963B2 (ja) | 2009-12-11 | 2009-12-11 | 炭化珪素の研磨液及びその研磨方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011122102A JP2011122102A (ja) | 2011-06-23 |
JP4827963B2 true JP4827963B2 (ja) | 2011-11-30 |
Family
ID=44145448
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009282083A Active JP4827963B2 (ja) | 2009-12-11 | 2009-12-11 | 炭化珪素の研磨液及びその研磨方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20120240479A1 (ja) |
EP (1) | EP2511358B1 (ja) |
JP (1) | JP4827963B2 (ja) |
TW (1) | TWI424051B (ja) |
WO (1) | WO2011070898A1 (ja) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10323162B2 (en) * | 2009-12-11 | 2019-06-18 | Mitsui Minig & Smelting Co., Ltd. | Abrasive material |
WO2013054883A1 (ja) * | 2011-10-13 | 2013-04-18 | 三井金属鉱業株式会社 | 研摩材スラリー及び研摩方法 |
WO2013161049A1 (ja) * | 2012-04-27 | 2013-10-31 | 三井金属鉱業株式会社 | SiC単結晶基板 |
US8860040B2 (en) | 2012-09-11 | 2014-10-14 | Dow Corning Corporation | High voltage power semiconductor devices on SiC |
US9018639B2 (en) | 2012-10-26 | 2015-04-28 | Dow Corning Corporation | Flat SiC semiconductor substrate |
US9738991B2 (en) | 2013-02-05 | 2017-08-22 | Dow Corning Corporation | Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion |
US9797064B2 (en) | 2013-02-05 | 2017-10-24 | Dow Corning Corporation | Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion |
JP6411759B2 (ja) * | 2014-03-27 | 2018-10-24 | 株式会社フジミインコーポレーテッド | 研磨用組成物、その使用方法、及び基板の製造方法 |
WO2015152021A1 (ja) * | 2014-03-31 | 2015-10-08 | 株式会社ノリタケカンパニーリミテド | GaN単結晶材料の研磨加工方法 |
US9279192B2 (en) | 2014-07-29 | 2016-03-08 | Dow Corning Corporation | Method for manufacturing SiC wafer fit for integration with power device manufacturing technology |
WO2016072371A1 (ja) * | 2014-11-07 | 2016-05-12 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
JP6694674B2 (ja) | 2014-11-07 | 2020-05-20 | 株式会社フジミインコーポレーテッド | 研磨方法およびポリシング用組成物 |
JP6280678B1 (ja) * | 2016-12-22 | 2018-02-14 | 三井金属鉱業株式会社 | 研摩液及び研摩方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2625751B2 (ja) | 1987-08-31 | 1997-07-02 | トヨタ自動車株式会社 | スタビライザ制御装置 |
JPS6472578A (en) | 1987-09-11 | 1989-03-17 | Mitsubishi Electric Corp | Stabilization of laser wavelength and wavelength stabilized laser |
US6159858A (en) * | 1995-07-04 | 2000-12-12 | Fujitsu Limited | Slurry containing manganese oxide and a fabrication process of a semiconductor device using such a slurry |
DE69736503T2 (de) * | 1996-06-27 | 2006-12-21 | Fujitsu Ltd., Kawasaki | Polieraufschlämmung mit Manganoxid-Schleifkörpern und Verfahren zur Herstellung einer Halbleiteranordnung mittels einer solchen Polieraufschlämmung |
US6022400A (en) * | 1997-05-22 | 2000-02-08 | Nippon Steel Corporation | Polishing abrasive grains, polishing agent and polishing method |
JP4090589B2 (ja) * | 1998-09-01 | 2008-05-28 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
JP4028163B2 (ja) * | 1999-11-16 | 2007-12-26 | 株式会社デンソー | メカノケミカル研磨方法及びメカノケミカル研磨装置 |
JP2006041252A (ja) * | 2004-07-28 | 2006-02-09 | Hitachi Chem Co Ltd | Cmp研磨剤、その製造方法及び基板の研磨方法 |
JP4792802B2 (ja) * | 2005-04-26 | 2011-10-12 | 住友電気工業株式会社 | Iii族窒化物結晶の表面処理方法 |
WO2007029465A1 (ja) * | 2005-09-09 | 2007-03-15 | Asahi Glass Company, Limited | 研磨剤、被研磨面の研磨方法および半導体集積回路装置の製造方法 |
JP4523935B2 (ja) | 2006-12-27 | 2010-08-11 | 昭和電工株式会社 | 炭化珪素単結晶基板の研磨用水系研磨スラリー及び研磨法。 |
JP2009179726A (ja) | 2008-01-31 | 2009-08-13 | Tkx:Kk | 研削・研磨用炭化珪素粉末の製造方法及び研削・研磨用炭化珪素粉末並びに研削・研磨用スラリー |
-
2009
- 2009-12-11 JP JP2009282083A patent/JP4827963B2/ja active Active
-
2010
- 2010-11-18 US US13/514,683 patent/US20120240479A1/en not_active Abandoned
- 2010-11-18 EP EP10835820.1A patent/EP2511358B1/en active Active
- 2010-11-18 WO PCT/JP2010/070549 patent/WO2011070898A1/ja active Application Filing
- 2010-12-09 TW TW099142954A patent/TWI424051B/zh active
Also Published As
Publication number | Publication date |
---|---|
WO2011070898A1 (ja) | 2011-06-16 |
EP2511358B1 (en) | 2018-01-03 |
JP2011122102A (ja) | 2011-06-23 |
US20120240479A1 (en) | 2012-09-27 |
EP2511358A4 (en) | 2014-07-02 |
TW201125962A (en) | 2011-08-01 |
EP2511358A1 (en) | 2012-10-17 |
TWI424051B (zh) | 2014-01-21 |
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