JP2020524908A - 半導体ウェハを処理するための方法、制御システムおよびプラント、ならびに半導体ウェハ - Google Patents
半導体ウェハを処理するための方法、制御システムおよびプラント、ならびに半導体ウェハ Download PDFInfo
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- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
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- B24B49/04—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent involving measurement of the workpiece at the place of grinding during grinding operation
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Abstract
Description
本発明は、半導体ウェハの処理方法、半導体ウェハを処理するための処理装置を制御する制御システム、そのような処理装置およびそのような制御システムを有する半導体ウェハを処理するプラント、ならびに半導体ウェハに関する。
半導体ウェハ、特にシリコンウェハは、例えば、半導体産業での使用、特に高度に統合された電子部品、例えばマイクロプロセッサまたはメモリチップの製造に適している。現代のマイクロエレクトロニクスでは、基板と呼ばれる、大域的および局所的な平坦性、エッジジオメトリ、厚さ分布、ナノトポロジと呼ばれる片面ベースの局所的な平坦性、および欠陥がないことへの高い要求がある。
本発明に従って、独立請求項の特徴を有する、方法、制御システムおよびプラント、ならびにまた、半導体ウェハが提案される。有利な実施形態は、従属請求項および以下の説明の主題である。
処理される半導体ウェハ上で決定される少なくとも1つのウェハパラメータに基づいて、
それぞれの処理動作が実行される処理装置の実際の状態に基づいて、および
好ましくは、3つの処理動作を受けた後のその状態に関してウェハパラメータESFQRmax、SFQRmax、ZDDavおよびGBIRを、当該3つのすべての個々の処理ステップ後の状態に関してこれらのウェハパラメータを最適化する代わりに、最適化することに基づいて、
それぞれの処理動作において定義される。
3つの処理動作の各々について、各処理装置に固有の少なくとも1つの動作パラメータを定義することを可能にするための情報が提供される。
Claims (14)
- 半導体ウェハ(600)を処理する方法であって、3つの処理動作、すなわち、前記半導体ウェハ(600)が両面研磨を受ける第1の研磨動作、後続する、前記半導体ウェハ(600)が化学機械研磨を受ける第2の研磨動作、および、後続する、前記半導体ウェハ(600)が層のエピタキシャル堆積を受けるコーティング動作を含み、
前記3つの処理動作の各々の少なくとも1つの動作パラメータが、
処理される前記半導体ウェハ上で決定される少なくとも1つのウェハパラメータに基づいて、
それぞれの前記処理動作が実行される処理装置の実際の状態に基づいて、および
前記3つの処理動作を受けた後の状態に関して平坦度を特性化するためにウェハパラメータを、前記3つのすべての個々の処理動作後の状態に関して前記ウェハパラメータを最適化する代わりに、最適化することに基づいて、
それぞれの前記処理動作において定義される、方法。 - 前記決定されるウェハパラメータが、平坦度測定からの生データから得られる、請求項1に記載の方法。
- 選択される、前記決定されるウェハパラメータがESFQDavである、請求項1または2に記載の方法。
- 平坦度の特性化のために考慮される前記ウェハパラメータは、ESFQRmax、SFQRmax、ZDDav、およびGBIRである、先行する請求項のいずれか1項に記載の方法。
- 前記第1の研磨動作について、前記少なくとも1つの対応する動作パラメータが確立され、研磨圧力、研磨時間、上側研磨プレートの回転速度、下側研磨プレートの回転速度、内側駆動リングの回転速度、外側駆動リングの回転速度、上側研磨プレートの温度、下側研磨プレートの温度、研磨媒体の組成、研磨媒体の体積流量、研磨媒体の温度、研磨媒体のpH、および、研磨された半導体ウェハの中心厚と、研磨に使用されるロータディスクの平均厚との目標差分を含む第1の群から選択される、先行する請求項のいずれか1項に記載の方法。
- 前記処理される半導体ウェハ上で決定される前記少なくとも1つのウェハパラメータは、特定の前記半導体ウェハ上の測定により決定されるか、または、処理される複数の半導体ウェハの測定に基づく評価を使用して決定される、請求項5に記載の方法。
- 前記第2の研磨動作について、前記少なくとも1つの対応する動作パラメータが確立され、研磨圧力の半径方向分布、研磨時間、研磨プレートの回転速度、キャリアの回転速度、研磨媒体の組成、研磨媒体の体積流量、研磨媒体のpH、研磨プレートの温度、研磨媒体の温度、および研磨パッドの目立てを含む第2の群から選択される、先行する請求項のいずれか1項に記載の方法。
- 前記コーティング動作について、前記少なくとも1つの対応する動作パラメータが確立され、堆積ガスの体積流量、堆積ガスの温度、堆積ガスの組成、エピタキシャル層の堆積の持続時間、サセプタの回転速度、半導体ウェハの加熱のための加熱出力の分布、ならびに、加えて、エピタキシャル層の堆積前のコーティング動作がエッチング動作を含む場合、エッチングガスの体積流量、エッチングガスの温度、エッチングガスの組成およびエッチング動作の持続時間を含む第3の群から選択される、先行する請求項のいずれか1項に記載の方法。
- 前記エッチング動作の過程で、前記エッチングガスが前記コーティング装置(300)を通過する、請求項8に記載の方法。
- 少なくとも1つの前記処理動作について、少なくとも1つの対応する動作パラメータが、後続の少なくとも1つの前記処理動作を受けた後の前記少なくとも1つのウェハパラメータの所望の値に基づいて定義される、先行する請求項のいずれか1項に記載の方法。
- 前記第2の研磨動作について、前記少なくとも1つの動作パラメータ(p2、p3)は、前記半導体ウェハ(600)の半径方向において、領域が、特に、前記半導体ウェハ(600)の前記領域に対して異なる圧力(p2、p3)を定義することにより、前記処理において別様に研磨されるように定義される、先行する請求項のいずれか1項に記載の方法。
- 半導体ウェハ(600)が第1の研磨動作において両面研磨を受けることができる第1の研磨装置(100)と、前記半導体ウェハ(600)が第2の研磨動作において化学機械研磨を受けることができる第2の研磨装置(200)と、コーティング動作において前記半導体ウェハ(600)上に層をエピタキシャル堆積させることができるコーティング装置(300)とを含む、前記半導体ウェハ(600)を処理するための処理装置(100、200、300)を制御するための制御システム(400)であって、前記制御システム(400)は、先行する請求項のいずれか1項に記載の方法を実行するように設定されている、制御システム(400)。
- 半導体ウェハ(600)が第1の研磨動作において両面研磨を受けることができる第1の研磨装置(100)と、前記半導体ウェハ(600)が第2の研磨動作において化学機械研磨を受けることができる第2の研磨装置(200)と、コーティング動作において前記半導体ウェハ(600)上に層をエピタキシャル堆積させることができるコーティング装置(300)とを含む、処理動作のための3つの処理装置を有し、請求項12に記載の制御システム(400)をも有する、前記半導体ウェハ(600)を処理するためのプラント(500)。
- 特にシリコンウェハであって、2mmのエッジ除外域で10nm以下のESFQRmax値を有し、エッジ部は72個のセクタに分割され、かつセクタ長は30mmであり、2mmのエッジ除外域で10nm以下のSFQRmax値を有し、サイト面積は26mm×8mmであり、148mmの半径位置において10nm/mm2以下の大きさのZDDav値を有し、2mmのエッジ除外域において0.10μm以下のGBIR値を有する半導体ウェハ(600)。
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