WO2017098696A1 - 研磨方法 - Google Patents
研磨方法 Download PDFInfo
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- WO2017098696A1 WO2017098696A1 PCT/JP2016/004996 JP2016004996W WO2017098696A1 WO 2017098696 A1 WO2017098696 A1 WO 2017098696A1 JP 2016004996 W JP2016004996 W JP 2016004996W WO 2017098696 A1 WO2017098696 A1 WO 2017098696A1
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- WIPO (PCT)
- Prior art keywords
- polishing
- wafer
- correlation
- cloth
- surface temperature
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/015—Temperature control
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/14—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the temperature during grinding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
Definitions
- the present invention relates to a polishing method.
- an inspection method using scattered light is used to detect particles on the surface of a wafer. Since the detection sensitivity of particles by a measuring instrument using scattered light is determined by the ratio between the defect signal and the background noise, if the background noise called haze is high, the S / N ratio decreases and accurate measurement is performed. Can not be. Since the haze detects scattered light due to the surface roughness of the wafer, the haze and the surface roughness are closely related, and it has been found that reducing the surface roughness reduces the haze.
- a typical method for suppressing haze there is control of cleaning conditions performed after finish polishing of a wafer. For example, by reducing the cleaning temperature of SC1, which is a mixed solution of NH 3 and H 2 O 2 , the alkali etching action on the wafer surface is suppressed, the surface roughness is reduced, and haze is reduced as a result.
- SC1 is a mixed solution of NH 3 and H 2 O 2
- haze is affected by the usage time of the polishing cloth. Since the haze deteriorates as the usage time of the polishing cloth increases, it is necessary to periodically replace the polishing cloth when the haze of the wafer after polishing exceeds a predetermined control value. When the haze level cannot be controlled sufficiently, it is necessary to frequently replace the polishing cloth, which causes a problem of deterioration in productivity and an increase in cost in the production of wafers.
- the present invention has been made in view of the above problems, and an object of the present invention is to provide a polishing method capable of controlling haze in polishing a wafer and thereby extending the life of a polishing cloth. . Moreover, it aims at controlling especially to suppress a haze.
- the present invention is configured to bring the wafer held by the polishing head into sliding contact with the surface of the polishing cloth while supplying the polishing slurry to the polishing cloth attached to the surface plate.
- a polishing method having a polishing step of polishing the surface of the wafer, wherein before performing the polishing step, the correlation between the surface temperature of the polishing cloth and the haze level of the wafer polished using the polishing cloth is performed in advance.
- a correlation deriving step to be obtained, and in the polishing step, the surface temperature of the polishing cloth is determined based on the correlation between the surface temperature of the polishing cloth and the haze level of the wafer polished using the polishing cloth.
- a polishing method characterized by polishing the wafer while controlling.
- the haze level of the wafer can be controlled by controlling the surface temperature of the polishing cloth during polishing based on the correlation between the surface temperature of the polishing cloth and the haze level determined in advance.
- the haze level can be controlled to be small by appropriately controlling the surface temperature of the polishing cloth based on the above correlation during polishing.
- the polishing cloth can be used for a long time, so that the life of the polishing cloth can be extended.
- a plurality of test wafers are subjected to test polishing using polishing cloths having different surface temperatures, and the haze level of each wafer after the test polishing is measured. It is preferable to perform this by determining the correlation between the surface temperature of the polishing cloth and the haze level of the wafer polished using the polishing cloth.
- the correlation between the surface temperature of the polishing pad and the haze level can be derived in advance.
- the surface temperature of the polishing cloth is adjusted to any one or more of the temperature of the polishing slurry supplied to the polishing cloth, the rotation speed of the polishing head, and the rotation speed of the surface plate. Can be controlled.
- the surface temperature of the polishing pad can be controlled by changing the polishing conditions in this way.
- the surface temperature of the polishing cloth can be controlled by heating the surface of the polishing cloth with a heater and / or cooling the surface of the polishing cloth by spraying cold air.
- the surface temperature of the polishing cloth can also be controlled.
- the correlation between the surface temperature of the polishing cloth and the haze level may change depending on the use time of the polishing cloth, the correlation according to the use time of the polishing cloth is periodically obtained in this way.
- a wafer having a desired haze level can be obtained more reliably over a long period of time.
- the haze level can be further reduced.
- the polishing step is preferably a finish polishing step after the rough polishing step.
- haze is particularly susceptible to the final polishing process, a wafer having a desired haze level can be obtained more reliably by applying the polishing method of the present invention to the final polishing process.
- the haze level of the wafer can be controlled to a desired value.
- the haze level can be controlled to be small by appropriately controlling the surface temperature of the polishing cloth based on the above correlation during polishing.
- the polishing cloth can be used for a long time, so that the life of the polishing cloth can be extended.
- the conventional technique has a problem that the haze level cannot be sufficiently controlled by polishing.
- the haze level cannot be sufficiently controlled, it is necessary to frequently replace the polishing cloth, resulting in a decrease in productivity in wafer production and There was a problem that the cost increased.
- the present inventors have repeatedly studied as follows to solve such problems.
- the present inventors considered that the temperature on the polished surface of a wafer can be an important factor for haze even in polishing, in view of the fact that the chemical temperature has a great influence on haze in cleaning.
- it is difficult to directly measure the temperature of the polishing surface so paying attention to the surface temperature of the polishing cloth that is considered to show the closest value to the temperature of the polishing surface, and controlling the surface temperature of the polishing cloth, haze Attempted to control level.
- the haze level decreases as the surface temperature becomes lower as shown in FIG. 1, but the haze deteriorates rapidly when the surface temperature becomes lower than a certain temperature. It was. From this result, it was found that there was a surface temperature of the polishing cloth that gave the minimum haze.
- the surface structure of the wafer polished at each surface temperature was observed with an atomic force microscope (AFM).
- the AFM observed an intermediate position between the center and the outer periphery of the wafer, and the observation range was 1 ⁇ 1 ⁇ m 2 .
- the surface structure conspicuous on the wafer was not observed above the surface temperature giving the minimum value of the haze level.
- a minute scratch pattern hereinafter referred to as nano scratch
- FIG. 3 shows the arithmetic mean roughness (Sa) and root mean square roughness (Sq) calculated from the AFM image.
- Center means data observed at the center of the wafer
- R / 2 means data observed between the center and the outer periphery
- Edge indicates data observed at a position 10 mm from the outer periphery.
- the reason why the local minimum appears in this way is considered as follows.
- the polishing temperature is lowered, the etching rate into the silicon by alkali is suppressed, so that excessive surface roughness is suppressed.
- the etching rate is suppressed excessively, the softening action of the silicon surface due to alkali is lost, and it is thought that the damage caused by the abrasive grains, like mechanical polishing, has changed to a polishing mode that appears on the surface as nano scratches. .
- the haze control method for example, if the surface temperature of the polishing cloth is controlled based on the correlation between the surface temperature of the polishing cloth and the haze level as shown in FIG. 1, the haze level can be controlled by polishing. As a result, the present invention was completed.
- a correlation derivation step for obtaining a correlation between the surface temperature of the polishing cloth and the haze level of the wafer polished using the polishing cloth;
- the correlation derivation step is performed before the polishing step.
- the correlation deriving step for example, as shown in FIG. 1, the correlation between the surface temperature of the polishing cloth and the haze level of the wafer polished using the polishing cloth is obtained.
- this correlation is obtained by test polishing each of a plurality of test wafers using polishing cloths having different surface temperatures and measuring the haze level of each wafer after the test polishing. Can do.
- each test wafer may be polished while adjusting the polishing conditions while varying the surface temperature on the same polishing cloth.
- the polishing apparatus 1 can be mainly composed of a polishing head 2 that holds a wafer W, a surface plate 3 to which a polishing cloth 4 is attached, a polishing slurry supply mechanism 5 and the like. Further, the polishing head 2 and the surface plate 3 can each rotate. Moreover, since it is preferable that the surface of the polishing pad 4 is always covered with the polishing slurry while polishing is being performed, the polishing slurry is continuously supplied by providing a pump or the like in the polishing slurry supply mechanism 5. It is preferable to supply. Further, as the polishing slurry supply mechanism 5, one having a function of adjusting the temperature of the polishing slurry supplied to the polishing pad 4 can also be used.
- the wafer W held by the polishing head 2 is brought into sliding contact with the surface of the polishing cloth 4 while supplying polishing slurry to the polishing cloth 4 attached to the surface plate 3. Polish the surface.
- the wafer is polished while controlling the surface temperature of the polishing cloth based on the correlation between the surface temperature of the polishing cloth and the haze level of the wafer polished using the polishing cloth. To do.
- polishing may be performed while controlling the surface temperature so as to be low enough not to generate nanoscratches.
- the surface temperature of the polishing cloth is set to a low temperature around 25 ° C., and nano scratches are generated on the polished wafer.
- the haze level may be controlled so as not to fall below 22.7 ° C. at which the haze level starts to deteriorate.
- the time until the haze level exceeds the control value can be increased as compared with the conventional one. Can be extended. Thereby, the deterioration of productivity and the increase in cost in the manufacture of wafers can be suppressed.
- the surface temperature of the polishing cloth can be controlled by adjusting any one or more of the temperature of the polishing slurry supplied to the polishing cloth, the rotation speed of the polishing head, and the rotation speed of the surface plate. it can.
- the surface temperature of the polishing pad may be controlled by heating the surface of the polishing pad with a heater, cooling the surface of the polishing pad by jetting cold air, or performing both heating and cooling.
- the polishing apparatus 1 shown in FIG. 5 may be one having a surface temperature control mechanism 6 such as a heater or a cooling means.
- the correlation derivation step performed before the polishing step is periodically performed to obtain the correlation between the surface temperature and the haze level, and based on the periodically obtained correlation, the polishing cloth It is preferable to control the surface temperature. Since the surface state of the polishing cloth can change according to the usage time of the polishing cloth, the above-described correlation may also change according to the usage time of the polishing cloth. Therefore, it is preferable to obtain the mutual relationship periodically.
- the polishing conditions are readjusted regularly and controlled to be the optimum surface temperature at that time, It is possible to control to a surface temperature at which a desired haze level can be obtained more reliably. Thereby, a favorable haze level can be maintained for a longer period of time, and the life of the polishing pad can be extended.
- the frequency of readjustment of the polishing conditions is not particularly limited, but can be about every 1000 polishing batches.
- the surface temperature at which nanoscratching occurs at any use time of the polishing cloth can also be obtained. Therefore, when it is desired to keep the haze level as small as possible, the surface temperature may be controlled to a low temperature that does not cause nano-scratching in an arbitrary usage time of the polishing pad.
- the polishing method of the present invention as described above is preferably applied to finish polishing. That is, the polishing step in the present invention is preferably a finish polishing step after the rough polishing step. Since haze is particularly susceptible to the final polishing process, a wafer having a desired haze level can be obtained more reliably by applying the polishing method of the present invention to the final polishing process.
- Example 1 According to the polishing method of the present invention as shown in FIG.
- the wafer to be polished was a silicon wafer having a diameter of 300 mm that had been subjected to the rough polishing process.
- the polishing conditions are as follows. First, a polishing apparatus as shown in FIG. 5 was used as the polishing apparatus. A suede pad was used as the polishing cloth, and a slurry obtained by adding ammonia and a water-soluble polymer to colloidal silica was used as the polishing slurry. The number of wafers polished in one batch was 2, and the rotation speed of the surface plate and the polishing head was 30 rpm.
- the correlation derivation step was performed as follows before the main polishing (polishing step). First, using a plurality of test wafers similar to the silicon wafer to be polished by the main polishing and a polishing cloth similar to the main polishing, the supply temperature of the polishing slurry is controlled so that the surface temperature of the polishing cloth is 2 ° C., The test wafer was polished at each surface temperature (test polishing). Then, from the result of this test polishing, the correlation between the surface temperature of the polishing cloth and the haze level of the silicon wafer polished using the polishing cloth was determined. A non-contact temperature sensor was used to measure the polishing cloth surface temperature. The haze level was measured in DWO mode using Surfscan SP3 manufactured by KLA Tencor. Thus, the correlation of FIG. 1 was obtained.
- the main polishing was performed while adjusting the surface temperature of the polishing cloth to 24.7 ° C. so as to minimize the haze level by adjusting the temperature of the polishing slurry based on the above correlation.
- Example 1 Polishing was performed in the same manner as in Example 1 except that the surface temperature of the polishing cloth was not controlled based on the correlation between the surface temperature of the polishing cloth and the haze level of the silicon wafer polished using the polishing cloth. .
- the haze level and the number of defects (SOD: Sum Of Defects) of the silicon wafer polished in Example 1 and Comparative Example 1 were measured using Surfscan SP3 manufactured by KLA Tencor, and the average value thereof was obtained.
- Example 1 As can be seen from Table 1, it was found that the haze level of Example 1 was better than that of Comparative Example 1. Further, the number of defects of the polished silicon wafer at that time was the same in Example 1 and Comparative Example 1. From this result, it can be seen that in Example 1, it was possible to control the haze level to be improved without deteriorating the number of defects.
- Example 2 The silicon wafer was polished using the polishing method of the present invention in the same manner as in Example 1. Further, in Example 2, the usage time of the polishing cloth was a relative value with respect to the life of the polishing cloth in Comparative Example 2 described later (the life in Comparative Example 2 was assumed to be 100), and 9, 25, 100, 200. At each time point, the correlation was obtained, and the slurry temperature of the abrasive was readjusted so that the surface temperature was such that the haze was the minimum value. The adjustment conditions are as follows: the surface temperature of the polishing cloth is 24.7 ° C. at the beginning, 23.3 ° C. after the relative value 9; 22.1 ° C. after 25; 21.1 ° C. after 100; 20.5 after 200; It was made to become ° C.
- the haze level of the wafer at each time point when the slurry temperature of the abrasive was readjusted was measured.
- the upper limit of the control value of the haze level was set to 0.0653 (ppm), and the polishing was finished when the measured haze level became substantially the same as this value. Replaced.
- Example 2 Polishing was performed under the same conditions as in Example 2 except that the surface temperature was not controlled based on the correlation between the surface temperature of the polishing cloth and the haze level of the wafer polished using the polishing cloth.
- the polishing conditions at the start of polishing were the same as those in Example 2.
- FIG. 6 shows the relationship between the haze level of Example 2 and Comparative Example 2 and the usage time of the polishing pad.
- FIG. 6 shows the haze level for Example 2 until the polishing time reaches 200 as the relative value.
- Example 2 in which the temperature of the polishing slurry was readjusted based on the correlation between the surface temperature and the haze level in consideration of the use time of the polishing cloth, the haze was deteriorated as compared with Comparative Example 2. The haze level did not reach the upper limit of the control value even when it was used for twice the life of the polishing cloth of Comparative Example 2.
- Comparative Example 2 As compared with the early stage of polishing of the polishing cloth, the haze was remarkably deteriorated as it approached the final stage, and reached the control value upper limit in a significantly shorter time than Example 2. Thus, when the surface temperature is not controlled based on the correlation between the surface temperature of the polishing cloth and the haze level of the wafer polished using the polishing cloth, it is confirmed that the haze deteriorates and the life of the polishing cloth decreases. It was done.
- the present invention is not limited to the above embodiment.
- the above-described embodiment is an exemplification, and the present invention has any configuration that has substantially the same configuration as the technical idea described in the claims of the present invention and that exhibits the same effects. Are included in the technical scope.
Abstract
Description
図4に示すような本発明の研磨方法に従って、仕上げ研磨工程を実施した。研磨対象のウェーハは、粗研磨工程まで施された直径300mmのシリコンウェーハとした。
研磨布の表面温度と該研磨布を用いて研磨されたシリコンウェーハのヘイズレベルとの相関関係に基づく研磨布の表面温度の制御を行わなかったこと以外、実施例1と同様に研磨を行った。
実施例1と同様に本発明の研磨方法を用いて、シリコンウェーハの研磨を実施した。また、実施例2では、研磨布の使用時間が、後述の比較例2における研磨布のライフに対する相対値(なお、比較例2におけるライフを100とした。)で、9、25、100、200の各時点で、相関関係を求めて、研磨剤のスラリー温度を、ヘイズが最小値となるような表面温度になるよう再調整した。調整条件は、研磨布の表面温度が、最初は24.7℃、相対値9以降で23.3℃、25以降で22.1℃、100以降で21.1℃、200以降で20.5℃となるようにした。
研磨布の表面温度と該研磨布を用いて研磨されたウェーハのヘイズレベルとの相関関係に基づく表面温度の制御を行わなかったこと以外、実施例2と同様な条件で研磨を行った。なお、研磨開始時点での研磨条件は実施例2と同じとした。
Claims (6)
- 定盤に貼り付けられた研磨布に研磨スラリーを供給しながら、研磨ヘッドで保持したウェーハを前記研磨布の表面に摺接させることにより、該ウェーハの表面を研磨する研磨工程を有する研磨方法であって、
前記研磨工程を行う前に、予め、前記研磨布の表面温度と該研磨布を用いて研磨されたウェーハのヘイズレベルとの相関関係を求めておく相関関係導出工程を有し、
前記研磨工程において、前記研磨布の表面温度と該研磨布を用いて研磨されたウェーハのヘイズレベルとの相関関係に基づいて前記研磨布の表面温度を制御しながら、前記ウェーハを研磨することを特徴とする研磨方法。 - 前記相関関係導出工程は、複数の試験用ウェーハを、互いに異なる表面温度を有する研磨布を用いてそれぞれ試験研磨し、該試験研磨後のそれぞれのウェーハのヘイズレベルを測定することで、前記研磨布の表面温度と該研磨布を用いて研磨されたウェーハのヘイズレベルとの相関関係を求めることによって行うことを特徴とする請求項1に記載の研磨方法。
- 前記研磨工程において、前記研磨布の表面温度を、前記研磨布に供給する前記研磨スラリーの温度、前記研磨ヘッドの回転数、及び前記定盤の回転数のいずれか1つ以上を調整することによって制御することを特徴とする請求項1又は請求項2に記載の研磨方法。
- 前記研磨工程において、前記研磨布の表面温度を、ヒーターによる前記研磨布の表面の加熱及び/又は冷気の噴射による前記研磨布の表面の冷却によって制御することを特徴とする請求項1から請求項3のいずれか1項に記載の研磨方法。
- さらに、前記相関関係導出工程を定期的に行うことで前記相関関係を求め、該定期的に求めた前記相関関係に基づいて前記研磨布の表面温度を制御することを特徴とする請求項1から請求項4のいずれか1項に記載の研磨方法。
- 前記研磨工程は、粗研磨工程後の仕上げ研磨工程であることを特徴とする請求項1から請求項5のいずれか1項に記載の研磨方法。
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CN201680067980.4A CN108290266B (zh) | 2015-12-10 | 2016-11-29 | 研磨方法 |
SG11201804407UA SG11201804407UA (en) | 2015-12-10 | 2016-11-29 | Polishing method |
US15/777,745 US10300576B2 (en) | 2015-12-10 | 2016-11-29 | Polishing method |
KR1020187015957A KR102299152B1 (ko) | 2015-12-10 | 2016-11-29 | 연마방법 |
DE112016005236.7T DE112016005236T5 (de) | 2015-12-10 | 2016-11-29 | Polierverfahren |
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- 2016-11-29 CN CN201680067980.4A patent/CN108290266B/zh active Active
- 2016-11-29 US US15/777,745 patent/US10300576B2/en active Active
- 2016-11-29 DE DE112016005236.7T patent/DE112016005236T5/de active Pending
- 2016-11-29 WO PCT/JP2016/004996 patent/WO2017098696A1/ja active Application Filing
- 2016-11-29 KR KR1020187015957A patent/KR102299152B1/ko active IP Right Grant
- 2016-12-01 TW TW105139687A patent/TWI700146B/zh active
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CN112378546A (zh) * | 2020-10-09 | 2021-02-19 | 上海新昇半导体科技有限公司 | 一种检测高温腔体温度的方法 |
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KR102299152B1 (ko) | 2021-09-07 |
KR20180092966A (ko) | 2018-08-20 |
TWI700146B (zh) | 2020-08-01 |
US10300576B2 (en) | 2019-05-28 |
TW201720578A (zh) | 2017-06-16 |
DE112016005236T5 (de) | 2018-07-26 |
CN108290266B (zh) | 2020-06-05 |
SG11201804407UA (en) | 2018-06-28 |
US20180369984A1 (en) | 2018-12-27 |
JP2017104946A (ja) | 2017-06-15 |
CN108290266A (zh) | 2018-07-17 |
JP6432497B2 (ja) | 2018-12-05 |
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