JP5078246B2 - 半導体装置、及び半導体装置の作製方法 - Google Patents

半導体装置、及び半導体装置の作製方法 Download PDF

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JP5078246B2
JP5078246B2 JP2005284538A JP2005284538A JP5078246B2 JP 5078246 B2 JP5078246 B2 JP 5078246B2 JP 2005284538 A JP2005284538 A JP 2005284538A JP 2005284538 A JP2005284538 A JP 2005284538A JP 5078246 B2 JP5078246 B2 JP 5078246B2
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layer
electrode layer
semiconductor
oxide
drain electrode
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康行 荒井
達也 本田
健吾 秋元
郁子 川俣
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Semiconductor Energy Laboratory Co Ltd
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JP2005284538A 2005-09-29 2005-09-29 半導体装置、及び半導体装置の作製方法 Expired - Lifetime JP5078246B2 (ja)

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Cited By (1)

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Publication number Priority date Publication date Assignee Title
US9947777B2 (en) 2016-04-22 2018-04-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device

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* Cited by examiner, † Cited by third party
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US10741679B2 (en) 2016-04-22 2020-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufactring semiconductor device

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