JP4777078B2 - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
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- JP4777078B2 JP4777078B2 JP2006017033A JP2006017033A JP4777078B2 JP 4777078 B2 JP4777078 B2 JP 4777078B2 JP 2006017033 A JP2006017033 A JP 2006017033A JP 2006017033 A JP2006017033 A JP 2006017033A JP 4777078 B2 JP4777078 B2 JP 4777078B2
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- FUZZWVXGSFPDMH-UHFFFAOYSA-M hexanoate Chemical compound CCCCCC([O-])=O FUZZWVXGSFPDMH-UHFFFAOYSA-M 0.000 description 1
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- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
- UZKWTJUDCOPSNM-UHFFFAOYSA-N methoxybenzene Substances CCCCOC=C UZKWTJUDCOPSNM-UHFFFAOYSA-N 0.000 description 1
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- SLYCYWCVSGPDFR-UHFFFAOYSA-N octadecyltrimethoxysilane Chemical compound CCCCCCCCCCCCCCCCCC[Si](OC)(OC)OC SLYCYWCVSGPDFR-UHFFFAOYSA-N 0.000 description 1
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- AHLBNYSZXLDEJQ-FWEHEUNISA-N orlistat Chemical compound CCCCCCCCCCC[C@H](OC(=O)[C@H](CC(C)C)NC=O)C[C@@H]1OC(=O)[C@H]1CCCCCC AHLBNYSZXLDEJQ-FWEHEUNISA-N 0.000 description 1
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- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 1
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- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
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- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
Description
本発明の実施の形態について、図1を用いて説明する。
図26(A)は本発明に係る表示パネルの構成を示す上面図であり、絶縁表面を有する基板2700上に画素2702をマトリクス上に配列させた画素部2701、走査線側入力端子2703、信号線側入力端子2704が形成されている。画素数は種々の規格に従って設ければ良く、XGAであってRGBを用いたフルカラー表示であれば1024×768×3(RGB)、UXGAであってRGBを用いたフルカラー表示であれば1600×1200×3(RGB)、フルスペックハイビジョンに対応させ、RGBを用いたフルカラー表示であれば1920×1080×3(RGB)とすれば良い。
本発明の実施の形態について、図13乃至図19を用いて説明する。より詳しくは、本発明を適用した、トップゲート型プラナー構造の薄膜トランジスタを有する表示装置の作製方法について説明する。図13(A)乃至図18(A)は表示装置画素部の上面図であり、図13(B)乃至図18(B)は、図13(A)乃至図18(A)における線E−Fによる断面図である。図19(A)も表示装置の上面図であり、図19(B)は、図19(A)における線O−W、線E−Pによる断面図である。なお表示素子として液晶材料を用いた液晶表示装置の例を示す。よって、同一部分又は同様な機能を有する部分の繰り返しの説明は省略する。
本発明を適用して薄膜トランジスタを形成し、該薄膜トランジスタを用いて表示装置を形成することができるが、発光素子を用いて、なおかつ、該発光素子を駆動するトランジスタとしてnチャネル型トランジスタを用いた場合、該発光素子から発せられる光は、下面放射、上面放射、両面放射のいずれかを行う。ここでは、それぞれの場合に応じた発光素子の積層構造について、図12を用いて説明する。
次に、実施の形態2乃至4によって作製される表示パネルに駆動用のドライバ回路を実装する態様について説明する。
本発明の表示装置に具備される保護回路の一例について説明する。
本実施の形態で示す表示パネルの画素の構成について、図10に示す等価回路図を参照して説明する。本実施の形態では、画素の表示素子として発光素子(EL素子)を用いる例を示す。
本実施の形態を図9を用いて説明する。図9は、本発明を適用して作製されるTFT基板2800を用いてEL表示モジュールを構成する一例を示している。図9において、TFT基板2800上には、画素により構成された画素部が形成されている。
本実施の形態を図20(A)及び図20(B)を用いて説明する。図20(A)、図20(B)は、本発明を適用して作製されるTFT基板2600を用いて液晶表示モジュールを構成する一例を示している。
本発明によって形成される表示装置によって、テレビジョン装置を完成させることができる。図21はテレビジョン装置の主要な構成を示すブロック図を示している。表示パネルには、図26(A)で示すような構成として画素部601のみが形成されて走査線側駆動回路603と信号線側駆動回路602とが、図27(B)のようなTAB方式により実装される場合と、図27(A)のようなCOG方式により実装される場合と、図26(B)に示すようにTFTを形成し、画素部601と走査線側駆動回路603を基板上に一体形成し信号線側駆動回路602を別途ドライバICとして実装する場合、また図26(C)で示すように画素部601と信号線側駆動回路602と走査線側駆動回路603を基板上に一体形成する場合などがあるが、どのような形態としても良い。
本発明を適用して、様々な表示装置を作製することができる。即ち、それら表示装置を表示部に組み込んだ様々な電子機器に本発明を適用できる。
(実施の形態12)
Claims (9)
- 導電性材料を含む組成物からなる複数の液滴の第1の吐出工程により、第1の線上に中心を有する複数の第1の液滴と、前記第1の線と平行な第2の線上に中心を有する複数の第2の液滴とをそれぞれ吐出し、
複数の液滴の第2の吐出工程により、前記第1の液滴の間に、前記第1の線上に中心を有する複数の第3の液滴を吐出することにより、前記第1の線に対して線対称であり、かつ連続的に変化し、最大線幅と最小線幅が周期的に繰り返されることにより複数の線幅を有する第1の導電層と、前記第2の液滴の間に、前記第2の線上に中心を有する複数の第4の液滴を吐出することにより、前記第2の線に対して線対称であり、かつ連続的に変化し、最大線幅と最小線幅が周期的に繰り返されることにより複数の線幅を有する第2の導電層とを、線幅の最大領域同士が隣り合わないように形成し、
前記第1の導電層と前記第2の導電層との間隔は、前記第1の導電層の最大線幅と最小線幅との差を半分にしたものと、前記第2の導電層の最大線幅と最小線幅との差を半分にしたものとの和より小さく、
前記第1の導電層の有する前記複数の線幅は、前記第2の吐出工程により吐出された前記第3の液滴が前記第1の吐出工程により吐出された前記第1の液滴に向かって移動することにより形成し、
前記第2の導電層の有する前記複数の線幅は、前記第2の吐出工程により吐出された前記第4の液滴が前記第1の吐出工程により吐出された前記第2の液滴に向かって移動することにより形成することを特徴とする半導体装置の作製方法。 - 請求項1において、前記第1の導電層及び前記第2の導電層の側端部は連続した波状形状とすることを特徴とする半導体装置の作製方法。
- 請求項1において、前記第1の導電層及び前記第2の導電層の側端部はうねる形状とすることを特徴とする半導体装置の作製方法。
- 請求項1乃至請求項3のいずれか一項において、前記導電性材料を含む組成物からなる複数の液滴が付着する領域に、前記導電性材料を含む組成物に対するぬれ性を制御する処理を行うことを特徴とする半導体装置の作製方法。
- 導電膜上にマスク材料を含む組成物からなる複数の液滴の第1の吐出工程により、第1の線上に中心を有する複数の第1の液滴と、前記第1の線と平行な第2の線上に中心を有する複数の第2の液滴とをそれぞれ吐出し、
複数の液滴の第2の吐出工程により、前記第1の液滴の間に、前記第1の線上に中心を有する複数の第3の液滴を吐出することにより、前記第1の線に対して線対称であり、かつ連続的に変化し、最大線幅と最小線幅が周期的に繰り返されることにより複数の線幅を有する第1のマスクと、前記第2の液滴の間に、前記第2の線上に中心を有する複数の第4の液滴を吐出することにより、前記第2の線に対して線対称であり、かつ連続的に変化し、最大線幅と最小線幅が周期的に繰り返されることにより複数の線幅を有する第2のマスクとをそれぞれ形成し、
前記第1のマスクと前記第2のマスクとの間隔は、前記第1のマスクの最大線幅と最小線幅との差を半分にしたものと、前記第2のマスクの最大線幅と最小線幅との差を半分にしたものとの和より小さく、
前記第1のマスクの有する前記複数の線幅は、前記第2の吐出工程により吐出された前記第3の液滴が前記第1の吐出工程により吐出された前記第1の液滴に向かって移動することにより形成し、
前記第2のマスクの有する前記複数の線幅は、前記第2の吐出工程により吐出された前記第4の液滴が前記第1の吐出工程により吐出された前記第2の液滴に向かって移動することにより形成し、
前記第1のマスク及び前記第2のマスクを用いて、前記導電膜を加工し、線幅の最大領域同士が隣り合わないように第1の導電層及び第2の導電層を形成することを特徴とする半導体装置の作製方法。 - 請求項5において、前記第1のマスク及び前記第2のマスクの側端部は連続した波状形状とすることを特徴とする半導体装置の作製方法。
- 請求項5において、前記第1のマスク及び前記第2のマスクの側端部はうねる形状とすることを特徴とする半導体装置の作製方法。
- 請求項5乃至請求項7のいずれか一項において、前記導電膜上に、前記マスク材料を含む組成物に対するぬれ性を制御する処理を行うことを特徴とする半導体装置の作製方法。
- 請求項4又は請求項8において、前記ぬれ性を制御する処理として、フッ化炭素基を有する物質、又はシランカップリング剤を含む物質を形成することを特徴とする半導体装置の作製方法。
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JP2014060451A (ja) * | 2013-12-18 | 2014-04-03 | Semiconductor Energy Lab Co Ltd | 発光装置 |
WO2016140284A1 (ja) * | 2015-03-02 | 2016-09-09 | コニカミノルタ株式会社 | パターン形成方法、透明導電膜付き基材、デバイス及び電子機器 |
CN110808263B (zh) | 2018-08-06 | 2020-09-22 | 云谷(固安)科技有限公司 | 显示面板、显示屏及显示终端 |
CN110767672B (zh) * | 2018-08-06 | 2020-11-17 | 云谷(固安)科技有限公司 | 显示面板、显示屏及显示终端 |
CN110767106B (zh) * | 2018-09-30 | 2020-09-08 | 云谷(固安)科技有限公司 | 显示面板、显示屏及显示终端 |
CN110767701B (zh) * | 2018-12-29 | 2022-10-21 | 昆山国显光电有限公司 | Oled阵列基板、显示屏及显示终端 |
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