WO2016140284A1 - パターン形成方法、透明導電膜付き基材、デバイス及び電子機器 - Google Patents
パターン形成方法、透明導電膜付き基材、デバイス及び電子機器 Download PDFInfo
- Publication number
- WO2016140284A1 WO2016140284A1 PCT/JP2016/056489 JP2016056489W WO2016140284A1 WO 2016140284 A1 WO2016140284 A1 WO 2016140284A1 JP 2016056489 W JP2016056489 W JP 2016056489W WO 2016140284 A1 WO2016140284 A1 WO 2016140284A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- line
- droplet
- pattern
- substrate
- liquid
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 107
- 238000000034 method Methods 0.000 title claims abstract description 77
- 230000007261 regionalization Effects 0.000 title claims abstract description 29
- 239000007788 liquid Substances 0.000 claims abstract description 187
- 239000000463 material Substances 0.000 claims abstract description 136
- 238000001035 drying Methods 0.000 claims description 26
- 239000004020 conductor Substances 0.000 claims description 19
- 230000001737 promoting effect Effects 0.000 claims description 6
- 239000002243 precursor Substances 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 abstract description 47
- 230000000368 destabilizing effect Effects 0.000 abstract description 9
- 239000010408 film Substances 0.000 description 28
- 239000000203 mixture Substances 0.000 description 28
- 239000002612 dispersion medium Substances 0.000 description 20
- 229920000139 polyethylene terephthalate Polymers 0.000 description 20
- 239000005020 polyethylene terephthalate Substances 0.000 description 20
- 229920001940 conductive polymer Polymers 0.000 description 17
- 239000004094 surface-active agent Substances 0.000 description 16
- 238000002834 transmittance Methods 0.000 description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 12
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 11
- 239000010419 fine particle Substances 0.000 description 11
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 11
- 239000002245 particle Substances 0.000 description 11
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 10
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 description 10
- 229920000447 polyanionic polymer Polymers 0.000 description 10
- -1 polyindoles Polymers 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- 230000000694 effects Effects 0.000 description 9
- 238000004381 surface treatment Methods 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 238000005259 measurement Methods 0.000 description 7
- 150000001735 carboxylic acids Chemical class 0.000 description 6
- 230000002940 repellent Effects 0.000 description 6
- 239000005871 repellent Substances 0.000 description 6
- 238000003892 spreading Methods 0.000 description 6
- 230000007480 spreading Effects 0.000 description 6
- 238000009736 wetting Methods 0.000 description 6
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 5
- 238000003851 corona treatment Methods 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 230000002265 prevention Effects 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229920002125 Sokalan® Polymers 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 208000028659 discharge Diseases 0.000 description 4
- 239000004584 polyacrylic acid Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 3
- 229920000767 polyaniline Polymers 0.000 description 3
- 229920001195 polyisoprene Polymers 0.000 description 3
- 229940005642 polystyrene sulfonic acid Drugs 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- PUPZLCDOIYMWBV-UHFFFAOYSA-N (+/-)-1,3-Butanediol Chemical compound CC(O)CCO PUPZLCDOIYMWBV-UHFFFAOYSA-N 0.000 description 2
- SVTBMSDMJJWYQN-UHFFFAOYSA-N 2-methylpentane-2,4-diol Chemical compound CC(O)CC(C)(C)O SVTBMSDMJJWYQN-UHFFFAOYSA-N 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- 150000001450 anions Chemical group 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- WERYXYBDKMZEQL-UHFFFAOYSA-N butane-1,4-diol Chemical compound OCCCCO WERYXYBDKMZEQL-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- CCIVGXIOQKPBKL-UHFFFAOYSA-N ethanesulfonic acid Chemical compound CCS(O)(=O)=O CCIVGXIOQKPBKL-UHFFFAOYSA-N 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000000879 optical micrograph Methods 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 125000002467 phosphate group Chemical group [H]OP(=O)(O[H])O[*] 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 229920000123 polythiophene Polymers 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-L sulfate group Chemical group S(=O)(=O)([O-])[O-] QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 2
- 125000000020 sulfo group Chemical group O=S(=O)([*])O[H] 0.000 description 2
- 229920002554 vinyl polymer Polymers 0.000 description 2
- RRZIJNVZMJUGTK-UHFFFAOYSA-N 1,1,2-trifluoro-2-(1,2,2-trifluoroethenoxy)ethene Chemical compound FC(F)=C(F)OC(F)=C(F)F RRZIJNVZMJUGTK-UHFFFAOYSA-N 0.000 description 1
- 229940015975 1,2-hexanediol Drugs 0.000 description 1
- QWOZZTWBWQMEPD-UHFFFAOYSA-N 1-(2-ethoxypropoxy)propan-2-ol Chemical compound CCOC(C)COCC(C)O QWOZZTWBWQMEPD-UHFFFAOYSA-N 0.000 description 1
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 1
- 229920000536 2-Acrylamido-2-methylpropane sulfonic acid Polymers 0.000 description 1
- XHZPRMZZQOIPDS-UHFFFAOYSA-N 2-Methyl-2-[(1-oxo-2-propenyl)amino]-1-propanesulfonic acid Chemical compound OS(=O)(=O)CC(C)(C)NC(=O)C=C XHZPRMZZQOIPDS-UHFFFAOYSA-N 0.000 description 1
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 description 1
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical class C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- 229920003935 Flemion® Polymers 0.000 description 1
- 229920000557 Nafion® Polymers 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229920000265 Polyparaphenylene Polymers 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229920002377 Polythiazyl Polymers 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- QDHFHIQKOVNCNC-UHFFFAOYSA-N butane-1-sulfonic acid Chemical compound CCCCS(O)(=O)=O QDHFHIQKOVNCNC-UHFFFAOYSA-N 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 125000002843 carboxylic acid group Chemical group 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000004581 coalescence Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 1
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 description 1
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 1
- 239000004205 dimethyl polysiloxane Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- UQSQSQZYBQSBJZ-UHFFFAOYSA-N fluorosulfonic acid Chemical group OS(F)(=O)=O UQSQSQZYBQSBJZ-UHFFFAOYSA-N 0.000 description 1
- 229910003472 fullerene Inorganic materials 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- FHKSXSQHXQEMOK-UHFFFAOYSA-N hexane-1,2-diol Chemical compound CCCCC(O)CO FHKSXSQHXQEMOK-UHFFFAOYSA-N 0.000 description 1
- 229920001519 homopolymer Polymers 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001485 poly(butyl acrylate) polymer Polymers 0.000 description 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 1
- 229920001197 polyacetylene Polymers 0.000 description 1
- 229920002859 polyalkenylene Polymers 0.000 description 1
- 229920001281 polyalkylene Polymers 0.000 description 1
- 229920000323 polyazulene Polymers 0.000 description 1
- 229920001707 polybutylene terephthalate Polymers 0.000 description 1
- 229920001088 polycarbazole Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920000414 polyfuran Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 150000003457 sulfones Chemical class 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- JLGLQAWTXXGVEM-UHFFFAOYSA-N triethylene glycol monomethyl ether Chemical compound COCCOCCOCCO JLGLQAWTXXGVEM-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/26—Processes for applying liquids or other fluent materials performed by applying the liquid or other fluent material from an outlet device in contact with, or almost in contact with, the surface
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D5/00—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
- B05D5/12—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures to obtain a coating with specific electrical properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B3/00—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form
- B32B3/26—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer
- B32B3/30—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer characterised by a layer formed with recesses or projections, e.g. hollows, grooves, protuberances, ribs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
Definitions
- the present invention relates to a pattern forming method, a substrate with a transparent conductive film, a device, and an electronic apparatus that can improve the degree of freedom in setting the arrangement interval of the fine lines without destabilizing the formation of fine lines containing a functional material.
- the photolithographic technique has a lot of material loss and a complicated process. For this reason, various methods have been studied in which the material loss is small and the process is simple.
- the width of the fine line is usually the width of the discharged droplet. Since the diameter is not smaller than the diameter, it is difficult to form a fine line pattern having a line width of several ⁇ m.
- a part of the repellent is hydrophilized using a laser or the like to form a hydrophilic / repellent pattern (that is, a pattern formed by a hydrophilic portion and a water repellent portion).
- a hydrophilic / repellent pattern that is, a pattern formed by a hydrophilic portion and a water repellent portion.
- Patent Document 1 a method for forming a pattern with a finer width than the droplet by depositing a functional material, which is a solid content in the droplet, on the periphery of the droplet using convection inside the droplet is proposed.
- Patent Document 2 It has also been proposed to use this method to form a ring having a fine width of conductive fine particles and to connect a plurality of these rings to form a transparent conductive film.
- the present applicant has used the convection inside the droplets to dry the functional material so far when drying the liquid containing the functional material provided in a line on the substrate.
- a parallel line pattern composed of a pair of fine lines is formed by depositing on the edge of a line-shaped liquid, and further, a transparent conductive film constituted by such a parallel line pattern is disclosed (Patent Document 3). ).
- an object of the present invention is to provide a pattern forming method, a substrate with a transparent conductive film, a device, and an electronic apparatus that can improve the degree of freedom in setting the arrangement interval of the fine lines without destabilizing the formation of the fine lines containing the functional material. Is to provide.
- a forming method comprising: When forming the line-shaped liquid, a droplet set applied from a plurality of nozzles to a pixel set arranged in parallel to the nozzle row of the droplet discharge device is arranged in a direction intersecting the nozzle row.
- 2. The pattern forming method according to 1, wherein the line-shaped liquid is formed obliquely with respect to the relative movement direction of the droplet discharge device. 3.
- 3. The pattern forming method according to 1 or 2 above, wherein the amount of droplets per pixel is adjusted by the number of gradations. 4).
- a device comprising the substrate with a transparent conductive film according to 11 above. 13 13.
- An electronic apparatus comprising the device according to 12.
- a pattern forming method a substrate with a transparent conductive film, a device, and an electronic apparatus capable of improving the degree of freedom in setting the arrangement interval of the fine lines without destabilizing the formation of the fine lines containing the functional material. Can be provided.
- the figure which illustrates notionally that a parallel line pattern is formed from a line-shaped liquid A diagram explaining a comparative example The figure explaining other comparative examples The figure which illustrates notionally an example of the pattern formation method of this invention The figure which illustrates notionally the linear liquid formed by the method of FIG. The figure which illustrates notionally the parallel line pattern formed by the method of FIG. The figure which illustrates notionally other examples of the pattern formation method of this invention The figure explaining notionally the line-shaped liquid formed by the method of FIG. The figure which illustrates notionally the parallel line pattern formed by the method of FIG.
- Diagram explaining nozzle row A perspective sectional view showing an example of a parallel line pattern formed on a substrate
- FIG. 1 is a diagram for conceptually explaining how a parallel line pattern is formed from a linear liquid.
- a linear liquid 2 containing a functional material is applied on a substrate 1.
- a droplet discharge device Specifically, a plurality of droplets containing a functional material are discharged from the droplet discharge device while moving the droplet discharge device relative to the substrate, and the discharged droplets are united on the substrate.
- a line-like liquid containing a functional material can be formed.
- the droplet discharge device can be constituted by, for example, an inkjet head provided in the inkjet recording device.
- the functional material is selectively applied to the edge of the line-shaped liquid 2 by utilizing the coffee stain phenomenon. Deposit.
- the drying of the line-shaped liquid 2 disposed on the substrate 1 is faster at the edge than at the center, and the local deposition of the conductive material occurs at the edge of the line-shaped liquid 2.
- the edge of the line-shaped liquid 2 is fixed by the deposited conductive material, and shrinkage in the width direction of the line-shaped liquid 2 due to subsequent drying is suppressed.
- the liquid of the line-like liquid 2 forms a flow from the central portion toward the edge so as to supplement the liquid lost by evaporation at the edge. This flow causes additional conductive material to be carried to the edge and deposited.
- This flow is caused by immobilization of the contact line of the line-shaped liquid 2 accompanying drying and a difference in evaporation amount between the central part of the line-shaped liquid 2 and the edge. Therefore, in order to promote this flow, the conductive material concentration, the contact angle between the line-shaped liquid 2 and the substrate 1, the amount of the line-shaped liquid 2, the heating temperature of the substrate 1, the arrangement density of the line-shaped liquid 2, or It is preferable to set conditions such as environmental factors such as temperature, humidity and atmospheric pressure.
- a coating film pattern (hereinafter sometimes referred to as a parallel line pattern) 3 made of fine lines containing a functional material is formed on the substrate 1.
- the parallel line pattern 3 formed from one line-shaped liquid 2 is composed of a set of two line segments (thin lines) 31 and 32.
- I is an arrangement interval between the thin lines 31 and 32.
- the functional material is a material for imparting a specific function to the base material.
- Giving a specific function means, for example, that a conductive material is used as a functional material when imparting conductivity to a base material, and when an insulating property is imparted, the insulating material is functional. Use as a material.
- the functional material contained in the ink of the present invention is not particularly limited, but conductive materials such as conductive fine particles and conductive polymers, insulating materials, semiconductor materials, optical filter materials, dielectric materials, etc. Can be preferably exemplified.
- a conductive material for example, conductivity can be imparted to the thin wires 31 and 32.
- a transparent conductive film in which the fine wires 31 and 32 are arranged on the base material 1 in, for example, a stripe shape or a mesh shape has excellent light transmittance.
- a conductive material is used as a functional material will be mainly described.
- the thinner the thin wires 31 and 32 the higher the resistance value.
- Patent Document 3 by reducing the formation width of the line-shaped liquid 2, the arrangement interval I of the fine wires 31 and 32 is reduced, and the fine wires 31 and 32 are arranged in a dense state on the substrate 1. This ensures the conductivity of the transparent conductive film.
- a plurality of droplets 20 applied on the base material 1 to form one line-shaped liquid is provided with one nozzle 41 provided in the droplet discharge device 4. Used to grant. In this way, a sufficiently thin line liquid was formed.
- ⁇ is the relative movement direction of the droplet discharge device 4 with respect to the substrate 1.
- the inventors' subsequent research has found that the resistance value can be suitably lowered by plating the thin wires 31 and 32, and the conductivity can be suitably improved. Thereby, even if the arrangement
- the arrangement interval I of the thin wires 31 and 32 can be increased by increasing the formation width of the line liquid 2.
- the number of gradations (drops per dot) [dpd] is set to 2 or more, whereby the droplets 20 are applied.
- the number of gradations increases, the generated thin lines 31 and 32 have irregularly shaped portions. A new problem has been found that (bulge) is likely to occur.
- the line-shaped liquid 2 when it is formed, it is applied from a plurality of nozzles to a pixel group arranged in parallel to the nozzle row of the droplet discharge device.
- a plurality of droplet sets are applied in a direction intersecting with the nozzle row, and a plurality of the droplet sets are combined to form the line liquid extending in the direction intersecting with the nozzle row.
- the effect of improving the degree of freedom in setting the arrangement interval I of the fine lines can be obtained without destabilizing the formation of the fine lines containing the functional material.
- a conductive material as a functional material, as in the case of forming a transparent conductive film, it is also found that the resistance of the pattern is reduced by preventing bulge, and the effect of improving the conductivity can be obtained. It was.
- FIG. 14A showing a pattern formed by the method according to the present invention and a diagram showing a pattern formed by the method shown in the example of FIG. It is clear from the comparison of 14 (d).
- FIG. 4 is a diagram conceptually illustrating an example of the pattern forming method of the present invention, and shows a state in which the substrate is viewed in plan.
- the droplet discharge device 4 has a nozzle row 40 composed of a plurality of nozzles 41a to 41j arranged in a row along the direction N.
- the region on the surface of the substrate 1 that is subject to pattern formation is composed of a plurality of pixels as shown by vertical and horizontal squares in the figure.
- x identifies a column
- y identifies a row.
- the pixel d4 indicates a pixel in d columns and 4 rows.
- Each row is composed of a plurality of pixels arranged in parallel in a direction parallel to the direction N of the nozzle row 40
- each column is a plurality of pixels arranged in parallel in a direction orthogonal to the direction N of the nozzle row 40. It is comprised by.
- the droplet 20 containing the functional material is discharged from the droplet discharge device 4 onto the substrate 1 while moving the droplet discharge device 4 relative to the substrate 1.
- the relative movement direction ⁇ is set in a direction orthogonal to the direction N of the nozzle row 40.
- a pixel set consisting of a plurality of pixels (d1, e1, f1) arranged in parallel with the direction N of the nozzle row 40 is used to generate a pixel set from each of the plurality of nozzles 41d, 41e, 41f.
- a droplet 20 is applied.
- These droplets 20 applied to the pixel group may be referred to as a droplet group.
- the droplets 20 can be individually applied to the respective pixels (d1, e1, and f1).
- the droplet discharge device 4 when the droplet discharge device 4 is relatively moved in the relative movement direction ⁇ by one pixel, the droplet discharge device 4 includes a plurality of pixels (d2, e2, f2) arranged in parallel to the direction N of the nozzle row 40.
- the next droplet 20 that is, the next droplet set is applied from each of the plurality of nozzles 41d, 41e, and 41f.
- a plurality of droplet sets can be applied in a direction intersecting the direction N of the nozzle row 40.
- a plurality of droplet groups are provided in a direction orthogonal to the direction N of the nozzle row 40.
- a line-shaped liquid 2 extending in a direction intersecting the direction N of the nozzle row 40 can be formed as shown in FIG. .
- the parallel line pattern 3 formed from one line-shaped liquid 2 is composed of a set of two line segments (thin lines) 31 and 32.
- a droplet set is applied from a plurality of nozzles to a pixel set including a plurality of pixels arranged in parallel to the nozzle row 40.
- the formation width of the line-shaped liquid 2 can be enlarged freely.
- the arrangement interval I between the thin wires 31 and 32 generated from the line-shaped liquid 2 is increased, it is possible to suitably prevent the occurrence of bulges. That is, the degree of freedom in setting the arrangement interval I of the thin wires 31 and 32 can be improved without destabilizing the formation of the thin wires 31 and 32 containing the functional material.
- the droplets 20 applied on the base material 1 are not only united within the droplet group including the droplets 20 but also adjacent to the direction intersecting the nozzle row 40. It is given so that the droplet groups are united.
- the dot diameter of the droplet 20 has a sufficient size with respect to the size of one pixel.
- the dot diameter of the droplet 20 is preferably set to a pixel length of 1 pixel or more, more preferably to a diagonal length of 1 pixel or more.
- the magnitude relationship between the dot diameter of the droplet 20 and the size of one pixel can be appropriately set by adjusting, for example, the pixel resolution, the amount of droplet per pixel, the contact angle of the droplet with respect to the substrate, and the like.
- the “pixel length of one pixel” can be the length of one side if the pixel is square, and can be the length of the long side if the pixel is rectangular.
- the “dot diameter of the droplet 20” D [mm] is calculated from the following formula based on the contact angle ⁇ [rad] of the droplet 20 with the substrate and the droplet amount V [mm 3 ] of the droplet 20 per pixel. Can be calculated.
- the contact angle is a static contact angle.
- a droplet (about 5 ⁇ l) to be measured in a syringe under a 25 ° C., 50% RH environment. It can obtain
- the contact angle of the droplets 20 ejected from the droplet ejection device 4 on the substrate 1 is preferably adjusted to a range of 10 [°] to 25 [°].
- the adjustment of the amount of droplets per pixel may be performed by adjusting the volume of droplets discharged from the nozzle (capacity per droplet). It is preferable to adjust the number [dpd]. That is, the droplet 20 applied to one pixel may be composed of only one droplet ejected from the nozzle, or may be composed of two or more droplets ejected from the nozzle. In the example of FIG. 3, it is necessary to set a large number of gradations in order to give a sufficient formation width to the line-shaped liquid. On the other hand, in the present invention, the number of gradations constitutes a pixel group. It can be set relatively small so as to be inversely proportional to the number of pixels to be performed.
- the droplet application amount with respect to the formation direction of the line-shaped liquid 2 is adjusted to a range of 2.5 [pL / ⁇ m] to 15 [pL / ⁇ m].
- the arrangement interval I of the thin wires 31 and 32 can be further increased, the transmittance can be further improved, bulges can be further prevented, and the resistance of the pattern can be further reduced.
- the overlapping ratio of the dot diameter per pixel is 20% or more and 60% or less. Thereby, it is possible to preferably achieve the coalescence of the droplets in the process of forming the line-shaped liquid, and further prevent the bulge and further reduce the resistance of the pattern.
- the overlapping rate of dot diameter per pixel [%] is a value calculated by ([D ⁇ d] / D) ⁇ 100, and “the overlapping rate of dot diameter per pixel is 20”. “Adjusting to not less than 60% and not more than 60%” can be paraphrased as satisfying the relationship of 20% ⁇ ([Dd] / D) ⁇ 100 ⁇ 60%.
- D is the dot diameter D [mm] of the droplet 20 described above
- d is the inter-dot distance [mm].
- the inter-dot distance d [mm] corresponds to the arrangement pitch of a plurality of nozzles constituting the nozzle row 40 of the droplet discharge device 4.
- the inter-dot distance d [mm] can also be referred to as the center-to-center distance of the droplet 20 applied adjacently in the nozzle row 40 direction.
- the droplet application amount in the formation direction of the line-shaped liquid 2 is adjusted to a range of 2.5 [pL / ⁇ m] to 15 [pL / ⁇ m] and 1 It is particularly preferable to adjust the overlapping ratio of the dot diameters per pixel to 20% or more and 60% or less, and furthermore, after satisfying these conditions, the droplets 20 ejected from the droplet ejection device 4 It is most preferable to adjust the contact angle on the substrate 1 in the range of 10 [°] to 25 [°].
- the present invention it is also possible to shorten the time required for wetting and spreading the droplets applied on the base material when forming the line liquid. For example, in the example of FIG. 3, it takes a relatively long time for the liquid droplet applied to one pixel to spread out to a predetermined range in the width direction of the line-shaped liquid, but in the present invention, it is parallel to the nozzle row.
- a droplet set to a pixel set composed of a plurality of pixels arranged in the above, a droplet can be applied more directly over a predetermined range in the width direction of the line-shaped liquid. Therefore, even a line-shaped liquid having a large formation width can be formed quickly.
- a treatment for promoting drying can be suitably performed. From the viewpoint of stably forming the parallel line pattern, it is preferable to perform drying relatively slowly so as to wait for the wetting and spreading of the droplets. However, according to the present invention, the time required for the wetting and spreading of the droplets as described above. Therefore, the parallel line pattern can be stably formed even in the case where the treatment for promoting the drying is performed.
- processes such as heating, blowing, and irradiation with energy rays can be exemplified, and one or more of these may be used in combination.
- a drying device also referred to as a dryer
- the drying device only needs to be configured so as to be able to perform the above-described drying process.
- a heater, a blower, an energy beam irradiation device, and the like can be exemplified, and one or more of these may be combined. .
- the pattern forming method of the present invention can be suitably used also when forming a pattern on a substrate having irregularities. That is, a pattern can be suitably formed on a substrate having irregularities such as a concave curved surface and a convex curved surface on the pattern forming surface.
- a pattern can be suitably formed on a substrate having irregularities such as a concave curved surface and a convex curved surface on the pattern forming surface.
- the pattern When forming a pattern on a substrate having irregularities, it is particularly preferable to perform a treatment for promoting drying. Even when the parallel line pattern is formed on an inclined surface, the flow of droplets is prevented, and the pattern accuracy is excellent. Furthermore, compared with the case of performing a bending process that gives irregularities after forming a pattern on a flat substrate, for example, the pattern is more closely adhered to the substrate when the pattern is formed on a substrate having irregularities. Sex is easily maintained.
- a droplet group to a pixel group consisting of a plurality of pixels arranged in parallel to the nozzle row, it is sufficient for a line-shaped liquid with a relatively small number of gradations.
- a formation width can be imparted.
- the fact that the number of gradations can be reduced means that the number of droplets applied to one pixel from one nozzle can be reduced, that is, the speed of relative movement of the droplet discharge device with respect to the substrate can be increased.
- the formation speed of the line-shaped liquid can be increased.
- it is ideal that each of the line-shaped liquids is dried simultaneously throughout the line-shaped liquid. Can be advanced.
- the present invention is not limited to this. It is also preferable to form the line-shaped liquid obliquely with respect to the relative movement direction of the droplet discharge device.
- FIG. 7 is a diagram for conceptually explaining another example of the pattern forming method of the present invention, and shows a plan view of the substrate.
- the line-shaped liquid 2 is formed obliquely with respect to the relative movement direction ⁇ of the droplet discharge device 4 as described below.
- the droplet 20 containing the functional material is discharged from the droplet discharge device 4 onto the substrate 1 while moving the droplet discharge device 4 relative to the substrate 1.
- the relative movement direction ⁇ is set in a direction orthogonal to the direction N of the nozzle row 40.
- a pixel set composed of a plurality of pixels (a1, b1, c1) arranged in parallel to the direction N of the nozzle row 40 is used to generate a pixel set from each of the plurality of nozzles 41a, 41b, 41c.
- a droplet 20, i.e. a droplet set, is applied.
- the droplet discharge device 4 when the droplet discharge device 4 is relatively moved in the relative movement direction ⁇ by one pixel, it is composed of a plurality of pixels (b2, c2, d2) arranged in parallel to the direction N of the nozzle row 40.
- the next droplet 20 that is, the next droplet set is applied from each of the plurality of nozzles 41b, 41c, and 41d.
- a plurality of droplet sets are applied in an oblique direction with respect to the direction N of the nozzle row 40.
- the next pixel set is selected from the pixels constituting the next row so as to be shifted by one pixel).
- an oblique direction with respect to the direction N of the nozzle row 40 that is, the relative movement direction of the droplet discharge device 4.
- the line-shaped liquid 2 extending in an oblique direction can be formed.
- the parallel line pattern 3 formed from one line-shaped liquid 2 is composed of a set of two line segments (thin lines) 31 and 32.
- the parallel line pattern 3 is formed obliquely with respect to the relative movement direction of the droplet discharge device 4.
- the formation width of the line-shaped liquid 2 can be freely increased by applying droplet sets from a plurality of nozzles. Furthermore, even when the arrangement interval I between the thin wires 31 and 32 generated from the line-shaped liquid 2 is increased, it is possible to suitably prevent the occurrence of bulges. That is, the degree of freedom in setting the arrangement interval I of the thin wires 31 and 32 can be improved without destabilizing the formation of the thin wires 31 and 32 containing the functional material.
- the present invention is not limited to this, and is appropriately set so that the thin lines 31 and 32 have a desired arrangement interval I. be able to. Therefore, an effect with a high degree of freedom in setting the arrangement interval I can be obtained.
- the number of pixels constituting the pixel group is preferably set in a range of 2 to 20 pixels, and more preferably in a range of 2 to 10 pixels.
- the present invention is not limited to this, and the substrate is moved by moving at least one of the substrate and the droplet discharge device.
- the droplet discharge device can be moved relative to the material.
- the relative movement direction ⁇ can also be said to be the direction of the relative velocity vector of the droplet discharge device as viewed from the substrate.
- the droplet discharge device 4 may have a plurality of nozzles arranged in a plurality of rows.
- the direction of the nozzle row corresponds to the overall arrangement direction N of the plurality of nozzles.
- the functional material contained in the liquid discharged from the droplet discharge device to the substrate is not particularly limited, but is preferably a conductive material or a conductive material precursor.
- An electroconductive material precursor refers to what can be changed into an electroconductive material by performing an appropriate process.
- Preferred examples of the conductive material include conductive fine particles and conductive polymers.
- the conductive fine particles are not particularly limited, but Au, Pt, Ag, Cu, Ni, Cr, Rh, Pd, Zn, Co, Mo, Ru, W, Os, Ir, Fe, Mn, Ge, Sn, Ga.
- fine particles such as In can be exemplified, and among them, use of fine metal particles such as Au, Ag, and Cu is more preferable because a circuit pattern having low electric resistance and strong against corrosion can be formed.
- metal fine particles containing Ag are most preferable.
- the average particle diameter of these metal fine particles is preferably in the range of 1 to 100 nm, more preferably in the range of 3 to 50 nm.
- carbon fine particles are used as the conductive fine particles.
- the carbon fine particles include graphite fine particles, carbon nanotubes, fullerenes and the like.
- the conductive polymer is not particularly limited, but a ⁇ -conjugated conductive polymer can be preferably exemplified.
- the ⁇ -conjugated conductive polymer is not particularly limited, and polythiophenes, polypyrroles, polyindoles, polycarbazoles, polyanilines, polyacetylenes, polyfurans, polyparaphenylenes, polyparaphenylene vinylenes, poly Chain conductive polymers such as paraphenylene sulfides, polyazulenes, polyisothianaphthenes, and polythiazyl can be used.
- polythiophenes and polyanilines are preferable in that high conductivity can be obtained. Most preferred is polyethylene dioxythiophene.
- the conductive polymer more preferably comprises the above-described ⁇ -conjugated conductive polymer and polyanion.
- a conductive polymer can be easily produced by chemical oxidative polymerization of a precursor monomer that forms a ⁇ -conjugated conductive polymer in the presence of an appropriate oxidizing agent, an oxidation catalyst, and a polyanion.
- the polyanion is a substituted or unsubstituted polyalkylene, a substituted or unsubstituted polyalkenylene, a substituted or unsubstituted polyimide, a substituted or unsubstituted polyamide, a substituted or unsubstituted polyester, and a copolymer thereof. It consists of a structural unit having a group and a structural unit having no anionic group.
- This polyanion is a solubilized polymer that solubilizes a ⁇ -conjugated conductive polymer in a solvent.
- the anion group of the polyanion functions as a dopant for the ⁇ -conjugated conductive polymer, and improves the conductivity and heat resistance of the ⁇ -conjugated conductive polymer.
- the anion group of the polyanion may be a functional group capable of undergoing chemical oxidation doping to the ⁇ -conjugated conductive polymer.
- a monosubstituted sulfate group A monosubstituted phosphate group, a phosphate group, a carboxy group, a sulfo group and the like are preferable.
- a sulfo group, a monosubstituted sulfate group, and a carboxy group are more preferable.
- polyanions include polyvinyl sulfonic acid, polystyrene sulfonic acid, polyallyl sulfonic acid, polyacrylic acid ethyl sulfonic acid, polyacrylic acid butyl sulfonic acid, poly-2-acrylamido-2-methylpropane sulfonic acid, polyisoprene sulfone. Acid, polyvinyl carboxylic acid, polystyrene carboxylic acid, polyallyl carboxylic acid, polyacryl carboxylic acid, polymethacryl carboxylic acid, poly-2-acrylamido-2-methylpropane carboxylic acid, polyisoprene carboxylic acid, polyacrylic acid and the like. . These homopolymers may be sufficient and 2 or more types of copolymers may be sufficient.
- it may be a polyanion having F (fluorine atom) in the compound.
- F fluorine atom
- Nafion made by Dupont
- Flemion made by Asahi Glass Co., Ltd.
- perfluoro vinyl ether containing a carboxylic acid group and the like can be mentioned.
- a compound having a sulfonic acid is more preferable since the ink ejection stability is particularly good when the ink jet printing method is used and high conductivity is obtained.
- polystyrene sulfonic acid polyisoprene sulfonic acid
- polyacrylic acid ethyl sulfonic acid and polybutyl acrylate sulfonic acid are preferable.
- These polyanions have the effect of being excellent in conductivity.
- the polymerization degree of the polyanion is preferably in the range of 10 to 100,000 monomer units, and more preferably in the range of 50 to 10,000 from the viewpoint of solvent solubility and conductivity.
- a commercially available material can be preferably used as the conductive polymer.
- a conductive polymer (abbreviated as PEDOT / PSS) made of poly (3,4-ethylenedioxythiophene) and polystyrene sulfonic acid is used in H.264. C. It is commercially available from Starck as CLEVIOS series, from Aldrich as PEDOT-PSS 483095 and 560598, and from Nagase Chemtex as Denatron series. Polyaniline is also commercially available from Nissan Chemical as the ORMECON series.
- liquid containing the functional material used when forming the line-shaped liquid one or two or more of water, an organic solvent and the like can be used in combination.
- the organic solvent is not particularly limited.
- alcohols such as 1,2-hexanediol, 2-methyl-2,4-pentanediol, 1,3-butanediol, 1,4-butanediol, propylene glycol
- ethers such as diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, triethylene glycol monomethyl ether, dipropylene glycol monomethyl ether, and dipropylene glycol monoethyl ether.
- the liquid containing the functional material may contain various additives such as a surfactant.
- a surfactant for example, when forming a line liquid using a droplet discharge method such as an inkjet method, it is possible to stabilize the discharge by adjusting the surface tension etc. become.
- the surfactant is not particularly limited, but a silicon surfactant or the like can be used. Silicone surfactants are those obtained by modifying the side chain or terminal of dimethylpolysiloxane with polyether. For example, KF-351A and KF-642 manufactured by Shin-Etsu Chemical Co., Ltd. and BYK347 and BYK348 manufactured by Big Chemie are commercially available. Yes.
- the addition amount of the surfactant is preferably 1% by weight or less with respect to the total amount of the liquid that forms the line-like liquid 2.
- the concentration range of the functional material in the liquid discharged from the droplet discharge device to the base material is preferably adjusted to a range of 0.01 [wt%] to 1.0 [wt%]. Thereby, formation of the thin wires 31 and 32 can be further stabilized.
- the base material is not particularly limited.
- glass plastic (polyethylene terephthalate, polybutylene terephthalate, polyethylene, polypropylene, acrylic, polyester, polyamide, etc.), metal (copper, nickel, aluminum, iron, etc. or an alloy), A ceramic etc. can be mentioned, These may be used independently and may be used in the bonded state.
- plastic is preferable, and polyethylene terephthalate, polyolefin such as polyethylene and polypropylene, and the like are preferable.
- the pattern forming method of the present invention can also be suitably used when forming a pattern on a substrate having irregularities.
- FIG. 11 is a partially cutaway perspective view showing an example of a parallel line pattern formed on a substrate, and the cross section corresponds to a vertical cross section cut in a direction orthogonal to the direction in which the parallel line pattern is formed. .
- the pair of two thin lines (line segments) 31 and 32 of the parallel line pattern 3 generated from one line-shaped liquid do not necessarily need to be islands completely independent from each other.
- the two line segments 31 and 32 are connected by the thin film portion 30 formed between the line segments 31 and 32 at a height lower than the height of the line segments 31 and 32. It is also preferable that it is formed as a continuous body.
- the line widths W1 and W2 of the line segments 31 and 32 of the parallel line pattern 3 are each preferably 10 ⁇ m or less. If it is 10 micrometers or less, since it will be a level which cannot be visually recognized normally, it is more preferable from a viewpoint of improving transparency. Considering the stability of the line segments 31 and 32, the line widths W1 and W2 of the line segments 31 and 32 are preferably in the range of 2 ⁇ m or more and 10 ⁇ m or less, respectively.
- the widths W1 and W2 of the line segments 31 and 32 are Z, which is the height of the thinnest part where the thickness of the functional material is the thinnest between the line segments 31 and 32.
- the protruding heights 31 and 32 are defined as Y1 and Y2, they are defined as the widths of the line segments 31 and 32 at half the height of Y1 and Y2.
- the height of the thinnest portion in the thin film portion 30 can be set to Z.
- the line widths W1 and W2 of the line segments 31 and 32 are the line segments 31 and 32 from the surface of the substrate 1. Are defined as the widths of the line segments 31 and 32 at half the heights H1 and H2.
- the line widths W1 and W2 of the line segments 31 and 32 constituting the parallel line pattern 3 are extremely thin as described above, from the viewpoint of securing the cross-sectional area and reducing the resistance, Higher heights H1 and H2 of the line segments 31 and 32 are desirable.
- the heights H1 and H2 of the line segments 31 and 32 are preferably in the range of 50 nm to 5 ⁇ m.
- the H1 / W1 ratio and the H2 / W2 ratio are preferably in the range of 0.01 or more and 1 or less, respectively.
- the height Z of the thin part is preferably in the range of 10 nm or less.
- the thin film portion 30 is provided in the range of 0 ⁇ Z ⁇ 10 nm in order to achieve a balance between transparency and stability.
- the H1 / Z ratio and the H2 / Z ratio are each preferably 5 or more, more preferably 10 or more, and 20 or more. Is particularly preferred.
- the range of the arrangement interval I of the line segments 31 and 32 is not particularly limited, and can be appropriately set with a high degree of freedom as described above, and even when the arrangement interval I is increased, the bulge is suitably used. Can be prevented. Specifically, even when the arrangement interval I is set to a large value of, for example, 50 ⁇ m or more, 100 ⁇ m or more, 200 ⁇ m or more, 300 ⁇ m or more, 400 ⁇ m or more, or even 500 ⁇ m or more, bulge can be suitably prevented, The formation of 31 and 32 can be stabilized. According to the present invention, the arrangement interval I can be appropriately set to an optimal value according to the application in a state where bulge is suitably prevented. When forming a transparent conductive film or the like, the arrangement interval I is preferably in the range of 100 ⁇ m to 1000 ⁇ m, and more preferably in the range of 100 ⁇ m to 500 ⁇ m.
- the arrangement interval I between the line segments 31 and 32 is the distance between the maximum protrusions of the line segments 31 and 32.
- the line segment 31 and the line segment 32 it is preferable to give the same shape (similar cross-sectional area) to the line segment 31 and the line segment 32.
- the heights H1 and H2 of the line segment 31 and the line segment 32 are substantially equal.
- the line widths W1 and W2 of the line segment 31 and the line segment 32 are substantially equal values.
- the line segments 31 and 32 do not necessarily have to be parallel, and it is sufficient that the line segments 31 and 32 are not connected over at least a certain length L in the line segment direction. Preferably, the line segments 31 and 32 are substantially parallel over at least a certain length L in the line segment direction.
- the length L of the line segments 31 and 32 in the line segment direction is preferably 5 times or more the arrangement interval I of the line segments 31 and 32, and more preferably 10 times or more.
- the length L and the arrangement interval I can be set corresponding to the formation length and formation width of the pattern (line-shaped liquid) 2.
- the line segments 31 and 32 may be connected to form a continuous body at the start point and the end point (start point and end point over a certain length L in the line segment direction) of the line-shaped liquid.
- the line segments 31 and 32 have substantially the same line widths W1 and W2, and the line widths W1 and W2 are sufficiently narrower than the distance between the two lines (arrangement interval I). .
- the line segment 31 and the line segment 32 constituting the pattern 3 generated from one line-shaped liquid are formed at the same time.
- the line segments 31 and 32 satisfy all the following conditions (a) to (c). Thereby, it becomes difficult to visually recognize the pattern, the transparency can be improved, the line segment is stabilized, and particularly when the functional material is a conductive material, the effect of reducing the resistance value of the pattern is excellent.
- each line segment 31 and 32 is H1 and H2, and the height of the thinnest part in each line segment is Z, 5 ⁇ H1 / Z and 5 ⁇ H2 / Z.
- the pattern formed according to the present invention is subjected to post-treatment such as baking or plating as necessary.
- post-treatment is preferably a treatment that improves the conductivity of the pattern.
- the substrate with a transparent conductive film of the present invention has a transparent conductive film including a pattern formed by the pattern forming method described above on the surface of the substrate.
- the functional material (conductive material) contained in the transparent conductive film is not transparent, the pattern is difficult to visually recognize by changing the line-shaped liquid into a parallel line pattern and making it thin. You can also.
- FIG. 12 is a diagram illustrating an example of a transparent conductive film.
- the transparent conductive film 5 is preferably configured as an aggregate of a plurality of parallel line patterns 3.
- the transparent conductive film 5 has a stripe shape in which a plurality of parallel line patterns 3 are juxtaposed in one direction, as shown in FIGS. 12C and 12D.
- a plurality of parallel line patterns 3 arranged in parallel in one direction and a mesh pattern (also referred to as a lattice) formed by intersecting a plurality of parallel line patterns 3 in a direction intersecting the parallel line pattern 3 are used. Is preferred.
- FIGS. 12B and 12D show the case where the parallel line pattern 3 is formed in parallel to the side of the substrate 1, and the examples of FIGS. 12B and 12D. These show the case where the parallel line pattern 3 is formed obliquely with respect to the side of the substrate 1.
- the use of the substrate with a transparent conductive film is not particularly limited, and can be used for various devices included in various electronic devices.
- the preferred use of the substrate with a transparent conductive film is, for example, as a transparent electrode for various types of displays such as liquid crystal, plasma, organic electroluminescence, field emission, etc. It can be suitably used as a transparent electrode used in telephones, electronic paper, various solar cells, various electroluminescence light control elements, and the like.
- the substrate with a transparent conductive film is suitably used as a transparent electrode of the device.
- a touch panel sensor etc. can be illustrated preferably.
- an electronic device provided with these devices For example, a smart phone, a tablet terminal, etc. can be illustrated preferably.
- Pattern formation (Example 1) ⁇ Ink composition> An ink (liquid containing a functional material) having the following composition was prepared. Silver nanoparticles (average particle size: 20 nm): 0.054 wt% Surfactant (manufactured by Big Chemie “BYK348”): 0.05 wt% Diethylene glycol monobutyl ether (abbreviation: DEGBE) (dispersion medium): 20 wt% ⁇ Water (dispersion medium): remaining amount ⁇ base material> As a base material, a PET base material 1 that was surface-treated so that the contact angle of a liquid containing a functional material was 20.3 ° was prepared.
- DEGBE Diethylene glycol monobutyl ether
- corona discharge treatment was performed using “PS-1M” manufactured by Shinko Electric Instrumentation Co., Ltd. ⁇ Pattern formation> Ink is discharged from the droplet discharge device while moving the droplet discharge device (“KM1024iLHE-30” manufactured by Konica Minolta Co., Ltd. (standard droplet volume: 30 pL)) relative to the substrate, and relative to the relative movement direction ⁇ .
- a plurality of line-shaped liquids were formed along the direction inclined by 45 °. The application interval of each line-shaped liquid was controlled so as to be a value twice the width of the two lines for the transmittance measurement sample, and 1000 ⁇ m for the terminal resistance measurement sample.
- the functional material was selectively deposited on the edge of the line-shaped liquid to form a parallel line pattern in a direction inclined by 45 ° with respect to the relative movement direction ⁇ .
- drying of the line-shaped liquid is promoted by forming a pattern on a base material placed on a stage heated to 70 ° C.
- the ink ejection by the droplet ejection device when forming the line liquid was controlled as follows.
- Example 2 An ink (liquid containing a functional material) having the following composition was prepared.
- Silver nanoparticles (average particle size: 20 nm): 0.19 wt%
- Surfactant manufactured by Big Chemie “BYK348”
- DEGBE Diethylene glycol monobutyl ether
- Disersion medium 20 wt%
- Water disersion medium
- Example 1 was performed in the same manner as in Example 1 except that the ink ejection by the droplet ejection apparatus when forming the line liquid was controlled as follows.
- Example 3 An ink (liquid containing a functional material) having the following composition was prepared.
- Silver nanoparticles (average particle size: 20 nm): 0.13 wt%
- Surfactant manufactured by Big Chemie “BYK348”
- DEGBE Diethylene glycol monobutyl ether
- Disersion medium 20 wt%
- Water disersion medium
- Example 1 was performed in the same manner as in Example 1 except that the ink ejection by the droplet ejection apparatus when forming the line liquid was controlled as follows.
- Example 4 ⁇ Ink composition> An ink (liquid containing a functional material) having the following composition was prepared. Silver nanoparticles (average particle size: 20 nm): 0.036 wt% Surfactant (manufactured by Big Chemie “BYK348”): 0.05 wt% Diethylene glycol monobutyl ether (abbreviation: DEGBE) (dispersion medium): 20 wt% ⁇ Water (dispersion medium): remaining amount ⁇ base material> The same PET substrate 1 as in Example 1 was used as the substrate. ⁇ Pattern formation> Example 1 was performed in the same manner as in Example 1 except that the ink ejection by the droplet ejection apparatus when forming the line liquid was controlled as follows.
- DEGBE Diethylene glycol monobutyl ether
- Example 5 An ink (liquid containing a functional material) having the following composition was prepared.
- Silver nanoparticles (average particle size: 20 nm): 0.023 wt%
- Surfactant manufactured by Big Chemie “BYK348”
- DEGBE Diethylene glycol monobutyl ether
- Example 1 Example 1 was performed in the same manner as in Example 1 except that the ink ejection by the droplet ejection apparatus when forming the line liquid was controlled as follows.
- Example 6 An ink (liquid containing a functional material) having the following composition was prepared.
- Silver nanoparticles (average particle size: 20 nm): 0.021 wt% Surfactant (manufactured by Big Chemie “BYK348”): 0.05 wt% Diethylene glycol monobutyl ether (abbreviation: DEGBE) (dispersion medium): 20 wt% ⁇ Water (dispersion medium): remaining amount ⁇ base material>
- DEGBE Diethylene glycol monobutyl ether
- Example 1 was performed in the same manner as in Example 1 except that the ink ejection by the droplet ejection apparatus when forming the line liquid was controlled as follows.
- Example 7 An ink (liquid containing a functional material) having the following composition was prepared.
- Silver nanoparticles (average particle size: 20 nm): 0.24 wt%
- Surfactant manufactured by Big Chemie “BYK348”
- DEGBE Diethylene glycol monobutyl ether
- Disersion medium 20 wt%
- Water Disersion medium
- base material remaining amount
- the same PET substrate 1 as in Example 1 was used as the substrate.
- Example 8 An ink (liquid containing a functional material) having the following composition was prepared.
- Silver nanoparticles (average particle size: 20 nm): 0.19 wt%
- Surfactant manufactured by Big Chemie “BYK348”
- DEGBE Diethylene glycol monobutyl ether
- dispensersion medium 20 wt%
- Water disersion medium
- base material remaining amount ⁇ base material>
- the same PET substrate 1 as in Example 1 was used as the substrate.
- Example 9 ⁇ Ink composition> An ink (liquid containing a functional material) having the following composition was prepared. Silver nanoparticles (average particle size: 20 nm): 0.063 wt% Surfactant (manufactured by Big Chemie “BYK348”): 0.05 wt% Diethylene glycol monobutyl ether (abbreviation: DEGBE) (dispersion medium): 20 wt% ⁇ Water (dispersion medium): remaining amount ⁇ base material> The same PET substrate 1 as in Example 1 was used as the substrate. ⁇ Pattern formation> Example 1 was performed in the same manner as in Example 1 except that the ink ejection by the droplet ejection apparatus when forming the line liquid was controlled as follows.
- DEGBE Diethylene glycol monobutyl ether
- Example 10 ⁇ Ink composition> As the ink, the same ink as in Example 1 was used. ⁇ Base material> The same PET substrate 1 as in Example 1 was used as the substrate. ⁇ Pattern formation> Example 1 was performed in the same manner as in Example 1 except that the ink ejection by the droplet ejection apparatus when forming the line liquid was controlled as follows.
- Example 11 ⁇ Ink composition> As the ink, the same ink as in Example 1 was used.
- Base material> a PET base material 2 that was surface-treated so that the contact angle of a liquid containing a functional material was 9.6 ° was prepared.
- corona discharge treatment was performed using “PS-1M” manufactured by Shinko Electric Instrumentation Co., Ltd. By making the strength of the surface treatment different from that in Example 1, the contact angle was adjusted.
- Example 1 was performed in the same manner as in Example 1 except that the ink ejection by the droplet ejection apparatus when forming the line liquid was controlled as follows.
- Example 12 ⁇ Ink composition> As the ink, the same ink as in Example 1 was used.
- As the surface treatment corona discharge treatment was performed using “PS-1M” manufactured by Shinko Electric Instrumentation Co., Ltd. By making the strength of the surface treatment different from that in Example 1, the contact angle was adjusted.
- Example 1 was performed in the same manner as in Example 1 except that the ink ejection by the droplet ejection apparatus when forming the line liquid was controlled as follows.
- Example 13 ⁇ Ink composition> As the ink, the same ink as in Example 1 was used.
- Base material> a PET base material 4 that was surface-treated so that the contact angle of a liquid containing a functional material was 24.1 ° was prepared.
- corona discharge treatment was performed using “PS-1M” manufactured by Shinko Electric Instrumentation Co., Ltd. By making the strength of the surface treatment different from that in Example 1, the contact angle was adjusted.
- Example 1 was performed in the same manner as in Example 1 except that the ink ejection by the droplet ejection apparatus when forming the line liquid was controlled as follows.
- Example 14 ⁇ Ink composition> As the ink, the same ink as in Example 1 was used.
- Base material> a PET base material 5 that was surface-treated so that the contact angle of a liquid containing a functional material was 26.7 ° was prepared.
- corona discharge treatment was performed using “PS-1M” manufactured by Shinko Electric Instrumentation Co., Ltd. By making the strength of the surface treatment different from that in Example 1, the contact angle was adjusted.
- Example 1 was performed in the same manner as in Example 1 except that the ink ejection by the droplet ejection apparatus when forming the line liquid was controlled as follows.
- Example 15 An ink (liquid containing a functional material) having the following composition was prepared.
- Silver nanoparticles (average particle size: 20 nm): 0.039 wt%
- Surfactant manufactured by Big Chemie “BYK348”
- DEGBE Diethylene glycol monobutyl ether
- Disersion medium 20 wt% ⁇ Water (dispersion medium): remaining amount ⁇ base material>
- DEGBE Diethylene glycol monobutyl ether
- Ink is discharged from the droplet discharge device while moving the droplet discharge device (“KM1024iLHE-30” manufactured by Konica Minolta Co., Ltd. (standard droplet volume: 30 pL)) relative to the base material, along the relative movement direction ⁇ .
- a plurality of line-shaped liquids were formed.
- the application interval of each line-shaped liquid was controlled so as to be a value twice the width of the two lines for the transmittance measurement sample, and 1000 ⁇ m for the terminal resistance measurement sample.
- the functional material was selectively deposited on the edge of the line liquid to form a parallel line pattern in the relative movement direction ⁇ .
- drying of the line-shaped liquid is promoted by forming a pattern on a base material placed on a stage heated to 70 ° C.
- the ink ejection by the droplet ejection device when forming the line liquid was controlled as follows.
- Dot diameter overlap rate 48.3 [%]
- the obtained pattern has a stripe shape as shown in FIG.
- Example 16 ⁇ Ink composition> As the ink, the same ink as in Example 15 was used. ⁇ Base material> As the base material, the same PET base material 1 as that of Example 1 was attached to the concave surface of the concave glass shown in FIG. ⁇ Pattern formation> Ink is discharged from the droplet discharge device while moving the droplet discharge device (“KM1024iLHE-30” manufactured by Konica Minolta Co., Ltd. (standard droplet volume: 30 pL)) relative to the base material, along the relative movement direction ⁇ . A plurality of line-shaped liquids were formed.
- the droplet discharge device (“KM1024iLHE-30” manufactured by Konica Minolta Co., Ltd. (standard droplet volume: 30 pL)
- each line-shaped liquid was controlled so as to be a value twice the width of the two lines for the transmittance measurement sample, and 1000 ⁇ m for the terminal resistance measurement sample.
- the functional material was selectively deposited on the edge of the line liquid to form a parallel line pattern in the relative movement direction ⁇ .
- drying of the line-shaped liquid is promoted by forming a pattern on a base material placed on a stage heated to 70 ° C.
- the ink ejection by the droplet ejection device when forming the line liquid was controlled as follows.
- -Single droplet volume (droplet volume per droplet): 30 [pL] -Number of pixels constituting the pixel group in the nozzle row direction: 7 -Number of gradations: 3 [dpd] -Droplet application amount with respect to the formation direction of one line-like liquid: 8.94 [pL / ⁇ m] ⁇ Dot diameter overlap rate: 48.3 [%]
- the pattern formed on the concave surface of the substrate has a stripe shape as shown in FIG.
- Example 1 ⁇ Ink composition> As the ink, the same ink as in Example 1 was used. ⁇ Base material> The same PET substrate 1 as in Example 1 was used as the substrate. ⁇ Pattern formation> Example 1 was performed in the same manner as in Example 1 except that the ink ejection by the droplet ejection apparatus when forming the line liquid was controlled as follows. ⁇ Single droplet volume: 30 [pL] -Number of pixels in the nozzle row direction: 1 Number of gradations: 21 [dpd] -Droplet application amount for one line-shaped liquid formation direction: 6.32 [pL / ⁇ m] ⁇ Dot diameter overlap rate: 73.0 [%] The obtained pattern has an inclined stripe shape as shown in FIG.
- Example 15 was the same as Example 15 except that the ink ejection by the droplet ejection apparatus when forming the line liquid was controlled as follows. ⁇ Single droplet volume: 30 [pL] -Number of pixels in the nozzle row direction: 1 Number of gradations: 21 [dpd] -Droplet application amount for one line-shaped liquid formation direction: 6.32 [pL / ⁇ m] ⁇ Dot diameter overlap rate: 73.0 [%] The obtained pattern has a stripe shape as shown in FIG.
- Pattern properties As the pattern properties, the following items (bulge prevention, double line width and thin line width) were evaluated.
- the double line width ( ⁇ m) is obtained by measuring the distance between a set of two thin lines by observation with an optical microscope. The measured value corresponds to the arrangement interval I described above.
- the fine line width ( ⁇ m) is obtained by measuring the width of a set of two fine lines by observation with an optical microscope. The measured values correspond to the above-described widths W1 and W2. In addition, since the width
- the transmittance (total light transmittance) (% T) is the total light transmittance measured using AUTOMATIC ZEMETER (MODEL TC-HIIIDP) manufactured by Tokyo Denshoku. In addition, it corrected using the base material without a pattern, and measured it as the total light transmittance of the produced pattern.
- the terminal resistance ( ⁇ ) is obtained by cutting a substrate on which a pattern is formed into a strip of 100 mm ⁇ 10 mm so that the long side is along the pattern forming direction, and between the terminals (that is, in the longitudinal direction of the strip-shaped region). This is a value obtained by measuring the resistance value between both ends. Prior to the measurement, the substrate is heated on a hot plate at 120 ° C. for 1 hour to heat and sinter the pattern.
- the droplet application amount in the direction of formation of one linear liquid is 2.5 [pL / ⁇ m] or more and 15 [pL / ⁇ m] or less.
- the contact angle of the liquid droplets ejected from the liquid droplet ejection device on the substrate is in the range of 10 [°] to 25 [°].
- Example 16 when attention is paid to Example 16, it can be seen that the present invention is also suitably used when a pattern is formed on a substrate having an uneven surface.
- FIGS. 14 (a) to (d) show four optical micrographs. Each of these images is a photograph of a fine line pattern formed by depositing a functional material on the edge of the line liquid when the line liquid applied on the substrate is dried. In the figure, the dark portion corresponds to the base material, and the linear bright portion corresponds to the thin line formed on the base material.
- FIGS. 14A and 14B show an embodiment of the present invention.
- Each of the three pixels arranged in parallel to the nozzle row of the droplet discharge device is formed when one line-shaped liquid is formed.
- a line extending from a plurality of nozzles to a pixel group is applied in a direction intersecting the nozzle row, and these droplet sets are combined to extend in the direction intersecting the nozzle row.
- the liquid is formed.
- FIG. 14A by setting the number of gradations to 5 [dpd], a total of 15 droplets are landed on the 3 pixels constituting the pixel group.
- FIG. 14B by setting the number of gradations to 7 [dpd], a total of 21 droplets are landed on the three pixels constituting the pixel group.
- FIGS. 14C and 14D are comparative examples, and when forming one line-shaped liquid, droplets applied to one pixel instead of a pixel group are represented as nozzle rows. A plurality of liquids are applied in the intersecting direction, and these droplets are combined to form a line-shaped liquid extending in the direction intersecting the nozzle row.
- FIG. 14C by setting the number of gradations to 6 [dpd], a total of 6 droplets are landed on one pixel.
- FIG. 14D by setting the number of gradations to 14 [dpd], a total of 14 droplets are landed on one pixel.
- FIG. 14C in which the number of landing droplets is relatively small bulges are hardly observed, but the width of the two lines cannot be increased.
- FIG. 14D it can be seen that the occurrence of bulge becomes conspicuous as the number of landing droplets increases. Therefore, it can be seen that bulging cannot be prevented when the width of the two lines is increased.
- FIG. 14A of the example and FIG. 14D of the comparative example have the same amount of droplets applied per length of the line-shaped liquid, that is, the arrangement interval I is increased to the same degree. Nevertheless, it can be seen that in FIG. 14 (a) using the present invention, the bulge prevention is remarkably superior. In the present invention, even if the number of landing droplets is further increased to increase the droplet application amount and the arrangement interval I is further increased, the bulge prevention property can be suitably exhibited as shown in FIG. .
- the degree of freedom in setting the arrangement interval I of the fine lines can be improved without destabilizing the formation of the fine lines containing the functional material.
- Substrate 2 Line-shaped liquid 20: Droplet 3: Parallel line pattern 31, 32: Fine line 4: Droplet discharge device 40: Nozzle array 41, 41a to 41j: Nozzle
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Manufacturing Of Electric Cables (AREA)
- Laminated Bodies (AREA)
- Non-Insulated Conductors (AREA)
Abstract
Description
基材に対して液滴吐出装置を相対移動させながら、該液滴吐出装置から基材上に機能性材料を含む複数の液滴を吐出して、複数の前記液滴を基材上で合一させてライン状液体を形成し、形成された前記ライン状液体を乾燥させる際に、該ライン状液体の縁に前記機能性材料を堆積させて、該機能性材料を含むパターンを形成するパターン形成方法であって、
前記ライン状液体を形成する際に、前記液滴吐出装置のノズル列に対して平行に配置される画素組に対して複数のノズルから付与される液滴組を、ノズル列と交差する方向に複数組付与し、複数組の前記液滴組を合一させて、ノズル列と交差する方向に伸びる前記ライン状液体を形成するパターン形成方法。
2.
前記ライン状液体を、液滴吐出装置の相対移動方向に対して斜めに形成する前記1記載のパターン形成方法。
3.
1画素あたりの液滴量を、階調数により調整する前記1又は2記載のパターン形成方法。
4.
ライン状液体の形成方向に対する液滴付与量を、2.5[pL/μm]以上15[pL/μm]以下の範囲に調整する前記1~3の何れかに記載のパターン形成方法。
5.
1画素当たりのドット径重なり率を20%以上60%以下に調整する前記1~4の何れかに記載のパターン形成方法。
6.
前記液滴吐出装置から吐出される前記液滴の前記基材上における接触角を、10[°]以上25[°]以下の範囲に調整する前記1~5の何れかに記載のパターン形成方法。
7.
前記ライン状液体の乾燥に際して、乾燥を促進させる処理を施す前記1~6の何れかに記載のパターン形成方法。
8.
前記機能性材料の濃度範囲を、0.01[wt%]以上1.0[wt%]以下の範囲に調整する前記1~7の何れかに記載のパターン形成方法。
9.
前記機能性材料は、導電性材料又は導電性材料前駆体である前記1~8の何れかに記載のパターン形成方法。
10.
前記基材は、パターン形成面に凹凸を有する前記1~9の何れかに記載のパターン形成方法。
11.
前記1~10の何れかに記載のパターン形成方法により形成されたパターンを含む透明導電膜を基材表面に有する透明導電膜付き基材。
12.
前記11記載の透明導電膜付き基材を有するデバイス。
13.
前記12記載のデバイスを備えた電子機器。
(イ)各線分31、32の幅をW1、W2としたときに、W1≦10μm、且つW2≦10μmであること。
(ウ)各線分31、32の高さをH1、H2としたときに、50nm<H1<5μm、且つ50nm<H2<5μmであること。
1.パターン形成
(実施例1)
<インクの組成>
インク(機能性材料を含む液体)として、以下の組成のものを調製した。
・銀ナノ粒子(平均粒子径:20nm):0.054wt%
・界面活性剤(ビッグケミー社製「BYK348」):0.05wt%
・ジエチレングリコールモノブチルエーテル(略称:DEGBE)(分散媒):20wt%
・水(分散媒):残量
<基材>
基材として、機能性材料を含む液体の接触角が20.3°となるように表面処理が施されたPET基材1を用意した。表面処理としては、信光電気計装社製「PS-1M」を用いてコロナ放電処理を行った。
<パターンの形成>
液滴吐出装置(コニカミノルタ社製「KM1024iLHE-30」(標準液滴容量30pL))を基材に対して相対移動させながら該液滴吐出装置からインクを吐出し、相対移動方向αに対して45°傾斜する方向に沿って、ライン状液体を複数本形成した。
各ライン状液体の塗布間隔は、透過率測定用のサンプルについては2本線幅の倍の値となるように制御し、端子抵抗測定用のサンプルについては1000μmとなるように制御した。
ライン状液体を蒸発させ、乾燥させることにより、該ライン状液体の縁に機能性材料を選択的に堆積させて、相対移動方向αに対して45°傾斜する方向に平行線パターンを形成した。ここでは、70℃に加熱されたステージ上に配置した基材にパターン形成することにより、ライン状液体の乾燥を促進させている。
以上のパターン形成において、ライン状液体を形成する際の液滴吐出装置によるインク吐出は、以下のように制御された。
・単一液滴量(1液滴あたりの液滴容量):30[pL]
・ノズル列方向の画素組を構成する画素数:7
・階調数:3[dpd]
・1つのライン状液体の形成方向に対する液滴付与量:6.32[pL/μm]
・ドット径の重なり率:48.3[%]
得られたパターンは、図12(b)のような傾斜したストライプ状である。
<インクの組成>
インク(機能性材料を含む液体)として、以下の組成のものを調製した。
・銀ナノ粒子(平均粒子径:20nm):0.19wt%
・界面活性剤(ビッグケミー社製「BYK348」):0.05wt%
・ジエチレングリコールモノブチルエーテル(略称:DEGBE)(分散媒):20wt%
・水(分散媒):残量
<基材>
基材として、実施例1と同様のPET基材1を用いた。
<パターンの形成>
ライン状液体を形成する際の液滴吐出装置によるインク吐出を以下のように制御したこと以外は、実施例1と同様にした。
・単一液滴量:30[pL]
・ノズル列方向の画素組を構成する画素数:2
・階調数:3[dpd]
・1つのライン状液体の形成方向に対する液滴付与量:1.81[pL/μm]
・ドット径の重なり率:48.3[%]
得られたパターンは、図12(b)のような傾斜したストライプ状である。
<インクの組成>
インク(機能性材料を含む液体)として、以下の組成のものを調製した。
・銀ナノ粒子(平均粒子径:20nm):0.13wt%
・界面活性剤(ビッグケミー社製「BYK348」):0.05wt%
・ジエチレングリコールモノブチルエーテル(略称:DEGBE)(分散媒):20wt%
・水(分散媒):残量
<基材>
基材として、実施例1と同様のPET基材1を用いた。
<パターンの形成>
ライン状液体を形成する際の液滴吐出装置によるインク吐出を以下のように制御したこと以外は、実施例1と同様にした。
・単一液滴量:30[pL]
・ノズル列方向の画素組を構成する画素数:3
・階調数:3[dpd]
・1つのライン状液体の形成方向に対する液滴付与量:2.71[pL/μm]
・ドット径の重なり率:48.3[%]
得られたパターンは、図12(b)のような傾斜したストライプ状である。
<インクの組成>
インク(機能性材料を含む液体)として、以下の組成のものを調製した。
・銀ナノ粒子(平均粒子径:20nm):0.036wt%
・界面活性剤(ビッグケミー社製「BYK348」):0.05wt%
・ジエチレングリコールモノブチルエーテル(略称:DEGBE)(分散媒):20wt%
・水(分散媒):残量
<基材>
基材として、実施例1と同様のPET基材1を用いた。
<パターンの形成>
ライン状液体を形成する際の液滴吐出装置によるインク吐出を以下のように制御したこと以外は、実施例1と同様にした。
・単一液滴量:30[pL]
・ノズル列方向の画素組を構成する画素数:8
・階調数:4[dpd]
・1つのライン状液体の形成方向に対する液滴付与量:9.63[pL/μm]
・ドット径の重なり率:53.0[%]
得られたパターンは、図12(b)のような傾斜したストライプ状である。
<インクの組成>
インク(機能性材料を含む液体)として、以下の組成のものを調製した。
・銀ナノ粒子(平均粒子径:20nm):0.023wt%
・界面活性剤(ビッグケミー社製「BYK348」):0.05wt%
・ジエチレングリコールモノブチルエーテル(略称:DEGBE)(分散媒):20wt%
・水(分散媒):残量
<基材>
基材として、実施例1と同様のPET基材1を用いた。
<パターンの形成>
ライン状液体を形成する際の液滴吐出装置によるインク吐出を以下のように制御したこと以外は、実施例1と同様にした。
・単一液滴量:30[pL]
・ノズル列方向の画素組を構成する画素数:8
・階調数:6[dpd]
・1つのライン状液体の形成方向に対する液滴付与量:14.43[pL/μm]
・ドット径の重なり率:58.9[%]
得られたパターンは、図12(b)のような傾斜したストライプ状である。
<インクの組成>
インク(機能性材料を含む液体)として、以下の組成のものを調製した。
・銀ナノ粒子(平均粒子径:20nm):0.021wt%
・界面活性剤(ビッグケミー社製「BYK348」):0.05wt%
・ジエチレングリコールモノブチルエーテル(略称:DEGBE)(分散媒):20wt%
・水(分散媒):残量
<基材>
基材として、実施例1と同様のPET基材1を用いた。
<パターンの形成>
ライン状液体を形成する際の液滴吐出装置によるインク吐出を以下のように制御したこと以外は、実施例1と同様にした。
・単一液滴量:30[pL]
・ノズル列方向の画素組を構成する画素数:9
・階調数:6[dpd]
・1つのライン状液体の形成方向に対する液滴付与量:16.25[pL/μm]
・ドット径の重なり率:58.9[%]
得られたパターンは、図12(b)のような傾斜したストライプ状である。
<インクの組成>
インク(機能性材料を含む液体)として、以下の組成のものを調製した。
・銀ナノ粒子(平均粒子径:20nm):0.24wt%
・界面活性剤(ビッグケミー社製「BYK348」):0.05wt%
・ジエチレングリコールモノブチルエーテル(略称:DEGBE)(分散媒):20wt%
・水(分散媒):残量
<基材>
基材として、実施例1と同様のPET基材1を用いた。
<パターンの形成>
ライン状液体を形成する際に液滴吐出装置(コニカミノルタ社製「KM1024iSHE」(標準液滴量6pL)を使用し、インク吐出を以下のように制御したこと以外は、実施例1と同様にした。
・単一液滴量:6[pL]
・ノズル列方向の画素組を構成する画素数:6
・階調数:4[dpd]
・1つのライン状液体の形成方向に対する液滴付与量:1.44[pL/μm]
・ドット径の重なり率:19.6[%]
得られたパターンは、図12(b)のような傾斜したストライプ状である。
<インクの組成>
インク(機能性材料を含む液体)として、以下の組成のものを調製した。
・銀ナノ粒子(平均粒子径:20nm):0.19wt%
・界面活性剤(ビッグケミー社製「BYK348」):0.05wt%
・ジエチレングリコールモノブチルエーテル(略称:DEGBE)(分散媒):20wt%
・水(分散媒):残量
<基材>
基材として、実施例1と同様のPET基材1を用いた。
<パターンの形成>
ライン状液体を形成する際に液滴吐出装置(コニカミノルタ社製「KM1024iSHE」(標準液滴量6pL)を使用し、インク吐出を以下のように制御したこと以外は、実施例1と同様にした。
・単一液滴量:6[pL]
・ノズル列方向の画素組を構成する画素数:6
・階調数:5[dpd]
・1つのライン状液体の形成方向に対する液滴付与量:1.80[pL/μm]
・ドット径の重なり率:25.3[%]
得られたパターンは、図12(b)のような傾斜したストライプ状である。
<インクの組成>
インク(機能性材料を含む液体)として、以下の組成のものを調製した。
・銀ナノ粒子(平均粒子径:20nm):0.063wt%
・界面活性剤(ビッグケミー社製「BYK348」):0.05wt%
・ジエチレングリコールモノブチルエーテル(略称:DEGBE)(分散媒):20wt%
・水(分散媒):残量
<基材>
基材として、実施例1と同様のPET基材1を用いた。
<パターンの形成>
ライン状液体を形成する際の液滴吐出装置によるインク吐出を以下のように制御したこと以外は、実施例1と同様にした。
・単一液滴量:30[pL]
・ノズル列方向の画素組を構成する画素数:3
・階調数:6[dpd]
・1つのライン状液体の形成方向に対する液滴付与量:5.41[pL/μm]
・ドット径の重なり率:58.9[%]
得られたパターンは、図12(b)のような傾斜したストライプ状である。
<インクの組成>
インクとして、実施例1と同様のインクを用いた。
<基材>
基材として、実施例1と同様のPET基材1を用いた。
<パターンの形成>
ライン状液体を形成する際の液滴吐出装置によるインク吐出を以下のように制御したこと以外は、実施例1と同様にした。
・単一液滴量:30[pL]
・ノズル列方向の画素組を構成する画素数:3
・階調数:7[dpd]
・1つのライン状液体の形成方向に対する液滴付与量:6.31[pL/μm]
・ドット径の重なり率:61.0[%]
得られたパターンは、図12(b)のような傾斜したストライプ状である。
<インクの組成>
インクとして、実施例1と同様のインクを用いた。
<基材>
基材として、機能性材料を含む液体の接触角が9.6°となるように表面処理が施されたPET基材2を用意した。表面処理としては、信光電気計装社製「PS-1M」を用いてコロナ放電処理を行った。表面処理の強度を実施例1と異ならせることにより、上記接触角に調整した。
<パターンの形成>
ライン状液体を形成する際の液滴吐出装置によるインク吐出を以下のように制御したこと以外は、実施例1と同様にした。
・単一液滴量:30[pL]
・ノズル列方向の画素組を構成する画素数:7
・階調数:3[dpd]
・1つのライン状液体の形成方向に対する液滴付与量:6.32[pL/μm]
・ドット径の重なり率:59.9[%]
得られたパターンは、図12(b)のような傾斜したストライプ状である。
<インクの組成>
インクとして、実施例1と同様のインクを用いた。
<基材>
基材として、機能性材料を含む液体の接触角が10.4°となるように表面処理が施されたPET基材3を用意した。表面処理としては、信光電気計装社製「PS-1M」を用いてコロナ放電処理を行った。表面処理の強度を実施例1と異ならせることにより、上記接触角に調整した。
<パターンの形成>
ライン状液体を形成する際の液滴吐出装置によるインク吐出を以下のように制御したこと以外は、実施例1と同様にした。
・単一液滴量:30[pL]
・ノズル列方向の画素組を構成する画素数:7
・階調数:3[dpd]
・1つのライン状液体の形成方向に対する液滴付与量:6.32[pL/μm]
・ドット径の重なり率:58.8[%]
得られたパターンは、図12(b)のような傾斜したストライプ状である。
<インクの組成>
インクとして、実施例1と同様のインクを用いた。
<基材>
基材として、機能性材料を含む液体の接触角が24.1°となるように表面処理が施されたPET基材4を用意した。表面処理としては、信光電気計装社製「PS-1M」を用いてコロナ放電処理を行った。表面処理の強度を実施例1と異ならせることにより、上記接触角に調整した。
<パターンの形成>
ライン状液体を形成する際の液滴吐出装置によるインク吐出を以下のように制御したこと以外は、実施例1と同様にした。
・単一液滴量:30[pL]
・ノズル列方向の画素組を構成する画素数:7
・階調数:3[dpd]
・1つのライン状液体の形成方向に対する液滴付与量:6.32[pL/μm]
・ドット径の重なり率:45.1[%]
得られたパターンは、図12(b)のような傾斜したストライプ状である。
<インクの組成>
インクとして、実施例1と同様のインクを用いた。
<基材>
基材として、機能性材料を含む液体の接触角が26.7°となるように表面処理が施されたPET基材5を用意した。表面処理としては、信光電気計装社製「PS-1M」を用いてコロナ放電処理を行った。表面処理の強度を実施例1と異ならせることにより、上記接触角に調整した。
<パターンの形成>
ライン状液体を形成する際の液滴吐出装置によるインク吐出を以下のように制御したこと以外は、実施例1と同様にした。
・単一液滴量:30[pL]
・ノズル列方向の画素組を構成する画素数:7
・階調数:3[dpd]
・1つのライン状液体の形成方向に対する液滴付与量:6.32[pL/μm]
・ドット径の重なり率:43.0[%]
得られたパターンは、図12(b)のような傾斜したストライプ状である。
<インクの組成>
インク(機能性材料を含む液体)として、以下の組成のものを調製した。
・銀ナノ粒子(平均粒子径:20nm):0.039wt%
・界面活性剤(ビッグケミー社製「BYK348」):0.05wt%
・ジエチレングリコールモノブチルエーテル(略称:DEGBE)(分散媒):20wt%
・水(分散媒):残量
<基材>
基材として、実施例1と同様のPET基材1を用いた。
<パターンの形成>
液滴吐出装置(コニカミノルタ社製「KM1024iLHE-30」(標準液滴容量30pL))を基材に対して相対移動させながら該液滴吐出装置からインクを吐出し、相対移動方向αに沿って、ライン状液体を複数本形成した。
各ライン状液体の塗布間隔は、透過率測定用のサンプルについては2本線幅の倍の値となるように制御し、端子抵抗測定用のサンプルについては1000μmとなるように制御した。
ライン状液体を蒸発させ、乾燥させることにより、該ライン状液体の縁に機能性材料を選択的に堆積させて、相対移動方向αに平行線パターンを形成した。ここでは、70℃に加熱されたステージ上に配置した基材にパターン形成することにより、ライン状液体の乾燥を促進させている。
以上のパターン形成において、ライン状液体を形成する際の液滴吐出装置によるインク吐出は、以下のように制御された。
・単一液滴量(1液滴あたりの液滴容量):30[pL]
・ノズル列方向の画素組を構成する画素数:7
・階調数:3[dpd]
・1つのライン状液体の形成方向に対する液滴付与量:8.94[pL/μm]
・ドット径の重なり率:48.3[%]
得られたパターンは、図12(a)のようなストライプ状である。
<インクの組成>
インクとして、実施例15と同様のインクを用いた。
<基材>
基材として、図13に示す凹面形状のガラスの凹面に、実施例1と同様のPET基材1を貼り付けたものを用いた。
<パターンの形成>
液滴吐出装置(コニカミノルタ社製「KM1024iLHE-30」(標準液滴容量30pL))を基材に対して相対移動させながら該液滴吐出装置からインクを吐出し、相対移動方向αに沿って、ライン状液体を複数本形成した。
各ライン状液体の塗布間隔は、透過率測定用のサンプルについては2本線幅の倍の値となるように制御し、端子抵抗測定用のサンプルについては1000μmとなるように制御した。
ライン状液体を蒸発させ、乾燥させることにより、該ライン状液体の縁に機能性材料を選択的に堆積させて、相対移動方向αに平行線パターンを形成した。ここでは、70℃に加熱されたステージ上に配置した基材にパターン形成することにより、ライン状液体の乾燥を促進させている。
以上のパターン形成において、ライン状液体を形成する際の液滴吐出装置によるインク吐出は、以下のように制御された。
・単一液滴量(1液滴あたりの液滴容量):30[pL]
・ノズル列方向の画素組を構成する画素数:7
・階調数:3[dpd]
・1つのライン状液体の形成方向に対する液滴付与量:8.94[pL/μm]
・ドット径の重なり率:48.3[%]
基材の凹面に形成されたパターンは、図12(a)のようなストライプ状である。
<インクの組成>
インクとして、実施例1と同様のインクを用いた。
<基材>
基材として、実施例1と同様のPET基材1を用いた。
<パターンの形成>
ライン状液体を形成する際の液滴吐出装置によるインク吐出を以下のように制御したこと以外は、実施例1と同様にした。
・単一液滴量:30[pL]
・ノズル列方向の画素数:1
・階調数:21[dpd]
・1つのライン状液体の形成方向に対する液滴付与量:6.32[pL/μm]
・ドット径の重なり率:73.0[%]
得られたパターンは、図12(b)のような傾斜したストライプ状である。
<インクの組成>
インクとして、実施例15と同様のインクを用いた。
<基材>
基材として、実施例15と同様のPET基材1を用いた。
<パターンの形成>
ライン状液体を形成する際の液滴吐出装置によるインク吐出を以下のように制御したこと以外は、実施例15と同様にした。
・単一液滴量:30[pL]
・ノズル列方向の画素数:1
・階調数:21[dpd]
・1つのライン状液体の形成方向に対する液滴付与量:6.32[pL/μm]
・ドット径の重なり率:73.0[%]
得られたパターンは、図12(a)のようなストライプ状である。
各実施例及び比較例で形成されたパターンについて、パターン性状及び物性値を評価した。
パターン性状として、以下の項目(バルジ防止性、2本線幅及び細線幅)について評価した。
表1~5に示す2本線性状は、光学顕微鏡観察により1組2本の細線を観察し、バルジ防止性を下記評価基準で評価した。
<評価基準>
A:バルジが生じなかった
B:バルジが僅かに生じた
C:バルジが多く生じた
2本線幅(μm)は、光学顕微鏡観察により1組2本の細線間の間隔を測定したものである。測定値は、上述した配置間隔Iに相当する。
細線幅(μm)は、光学顕微鏡観察により1組2本の細線の幅を測定したものである。測定値は、上述した幅W1、W2に相当する。なお、2本の細線の幅は実質的に同じであったため、一方の細線の測定値をもって細線幅(μm)とした。
物性値として、以下の項目(透過率、シート抵抗及び端子抵抗)について評価した。
透過率(全光線透過率)(%T)は、東京電色社製AUTOMATICHAZEMETER(MODEL TC-HIIIDP)を用いて測定した全光線透過率である。なお、パターンのない基材を用いて補正を行い、作成したパターンの全光線透過率として測定した。
端子抵抗(Ω)は、パターンが形成された基材を、長辺がパターン形成方向に沿うように100mm×10mmの短冊状に切り出し、端子間(即ち、短冊状領域の長手方向の両端間)の抵抗値を測定した値である。測定の前に、120℃で1時間、ホットプレート上で基材を加熱することによって、パターンに加熱焼成処理を施している。
表1~4に示す実施例1~16と比較例1、2とを対比すると、本発明によれば、細線形成方向によらず、特にライン状液体2の形成幅を大きくして、細線31、32の配置間隔Iを大きくする場合においても、生成される細線31、32にバルジが発生することを好適に防止できることがわかる。即ち、本発明によれば、機能性材料を含む細線の形成を不安定化させることなく、該細線の配置間隔I設定の自由度を向上できる効果が得られることがわかる。
図14(a)~(d)に、4枚の光学顕微鏡写真を示した。これらは、何れも、基材上に付与されたライン状液体を乾燥させる際に、該ライン状液体の縁に機能性材料を堆積させて形成された細線パターンを撮影したものである。図中、暗い部分が基材に対応し、線状の明るい部分が、基材上に形成された細線に対応する。
2:ライン状液体
20:液滴
3:平行線パターン
31、32:細線
4:液滴吐出装置
40:ノズル列
41、41a~41j:ノズル
Claims (13)
- 基材に対して液滴吐出装置を相対移動させながら、該液滴吐出装置から基材上に機能性材料を含む複数の液滴を吐出して、複数の前記液滴を基材上で合一させてライン状液体を形成し、形成された前記ライン状液体を乾燥させる際に、該ライン状液体の縁に前記機能性材料を堆積させて、該機能性材料を含むパターンを形成するパターン形成方法であって、
前記ライン状液体を形成する際に、前記液滴吐出装置のノズル列に対して平行に配置される画素組に対して複数のノズルから付与される液滴組を、ノズル列と交差する方向に複数組付与し、複数組の前記液滴組を合一させて、ノズル列と交差する方向に伸びる前記ライン状液体を形成するパターン形成方法。 - 前記ライン状液体を、液滴吐出装置の相対移動方向に対して斜めに形成する請求項1記載のパターン形成方法。
- 1画素あたりの液滴量を、階調数により調整する請求項1又は2記載のパターン形成方法。
- ライン状液体の形成方向に対する液滴付与量を、2.5[pL/μm]以上15[pL/μm]以下の範囲に調整する請求項1~3の何れかに記載のパターン形成方法。
- 1画素当たりのドット径重なり率を20%以上60%以下に調整する請求項1~4の何れかに記載のパターン形成方法。
- 前記液滴吐出装置から吐出される前記液滴の前記基材上における接触角を、10[°]以上25[°]以下の範囲に調整する請求項1~5の何れかに記載のパターン形成方法。
- 前記ライン状液体の乾燥に際して、乾燥を促進させる処理を施す請求項1~6の何れかに記載のパターン形成方法。
- 前記機能性材料の濃度範囲を、0.01[wt%]以上1.0[wt%]以下の範囲に調整する請求項1~7の何れかに記載のパターン形成方法。
- 前記機能性材料は、導電性材料又は導電性材料前駆体である請求項1~8の何れかに記載のパターン形成方法。
- 前記基材は、パターン形成面に凹凸を有する請求項1~9の何れかに記載のパターン形成方法。
- 請求項1~10の何れかに記載のパターン形成方法により形成されたパターンを含む透明導電膜を基材表面に有する透明導電膜付き基材。
- 請求項11記載の透明導電膜付き基材を有するデバイス。
- 請求項12記載のデバイスを備えた電子機器。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020177024170A KR102003625B1 (ko) | 2015-03-02 | 2016-03-02 | 패턴 형성 방법, 투명 도전막을 구비한 기재, 디바이스 및 전자 기기 |
JP2017503701A JP6652124B2 (ja) | 2015-03-02 | 2016-03-02 | パターン形成方法 |
CN201680012681.0A CN107249759B (zh) | 2015-03-02 | 2016-03-02 | 图案形成方法、带透明导电膜的基材、器件及电子设备 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015040138 | 2015-03-02 | ||
JP2015-040138 | 2015-03-02 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2016140284A1 true WO2016140284A1 (ja) | 2016-09-09 |
Family
ID=56848190
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2016/056489 WO2016140284A1 (ja) | 2015-03-02 | 2016-03-02 | パターン形成方法、透明導電膜付き基材、デバイス及び電子機器 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP6652124B2 (ja) |
KR (1) | KR102003625B1 (ja) |
CN (1) | CN107249759B (ja) |
WO (1) | WO2016140284A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016168575A (ja) * | 2015-03-14 | 2016-09-23 | コニカミノルタ株式会社 | パターン形成装置及びパターン形成方法 |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004000932A (ja) * | 2002-04-19 | 2004-01-08 | Seiko Epson Corp | デバイスの製造方法、デバイス及び電子機器 |
JP2004290958A (ja) * | 2003-03-11 | 2004-10-21 | Seiko Epson Corp | パターンの形成方法及びパターン形成装置、デバイスの製造方法、導電膜配線、電気光学装置、並びに電子機器 |
JP2006237586A (ja) * | 2005-01-28 | 2006-09-07 | Semiconductor Energy Lab Co Ltd | 半導体装置、電子機器、半導体装置の作製方法 |
JP2007000755A (ja) * | 2005-06-23 | 2007-01-11 | Seiko Epson Corp | 成膜方法および機能性膜、並びに電気光学装置、電子機器 |
JP2007083227A (ja) * | 2005-08-26 | 2007-04-05 | Seiko Epson Corp | 層形成方法、アクティブマトリクス基板の製造方法、および多層配線基板の製造方法 |
WO2014030647A1 (ja) * | 2012-08-20 | 2014-02-27 | コニカミノルタ株式会社 | 導電性材料を含む平行線パターン、平行線パターン形成方法、透明導電膜付き基材、デバイス及び電子機器 |
JP2015012046A (ja) * | 2013-06-26 | 2015-01-19 | コニカミノルタ株式会社 | 導電性細線の形成方法並びにこれに用いられる線及び基材 |
WO2015111731A1 (ja) * | 2014-01-24 | 2015-07-30 | コニカミノルタ株式会社 | パターン形成方法、透明導電膜付き基材、デバイス及び電子機器 |
JP2015155086A (ja) * | 2014-02-20 | 2015-08-27 | コニカミノルタ株式会社 | 塗膜形成方法、透明導電膜付き基材、デバイス及び電子機器 |
WO2015199204A1 (ja) * | 2014-06-25 | 2015-12-30 | コニカミノルタ株式会社 | パターン形成方法、透明導電膜付き基材、デバイス及び電子機器 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100409042C (zh) * | 2002-04-19 | 2008-08-06 | 精工爱普生株式会社 | 器件的制造方法、器件以及电子机器 |
JP2004160449A (ja) * | 2002-10-24 | 2004-06-10 | Seiko Epson Corp | デバイス製造装置及びデバイスの製造方法、電子機器 |
US7296866B2 (en) * | 2003-09-18 | 2007-11-20 | Sony Corporation | Ejection control device, liquid-ejecting apparatus, ejection control method, recording medium, and program |
JP4325343B2 (ja) | 2003-09-25 | 2009-09-02 | セイコーエプソン株式会社 | 膜形成方法およびデバイス製造方法 |
JP4293043B2 (ja) * | 2004-04-19 | 2009-07-08 | セイコーエプソン株式会社 | 液滴吐出装置を用いた描画方法および液滴吐出装置、並びに電気光学装置の製造方法 |
JP4293042B2 (ja) * | 2004-04-19 | 2009-07-08 | セイコーエプソン株式会社 | 液滴吐出装置を用いた描画方法および液滴吐出装置、並びに電気光学装置の製造方法 |
JP2009267206A (ja) * | 2008-04-28 | 2009-11-12 | Konica Minolta Holdings Inc | 配線パターン形成方法 |
EP2496661B1 (en) | 2009-11-02 | 2018-07-11 | Yissum Research Development Company of the Hebrew University of Jerusalem, Ltd. | Transparent conductive coatings for optoelectronic and electronic devices |
JP6160040B2 (ja) | 2012-08-20 | 2017-07-12 | コニカミノルタ株式会社 | 導電性材料を含む平行線パターンの形成方法及び透明導電膜付き基材の形成方法 |
CN105377449B (zh) * | 2013-07-10 | 2018-09-04 | 柯尼卡美能达株式会社 | 涂膜形成方法、带透明导电膜的基材、器件和电子设备 |
-
2016
- 2016-03-02 WO PCT/JP2016/056489 patent/WO2016140284A1/ja active Application Filing
- 2016-03-02 CN CN201680012681.0A patent/CN107249759B/zh active Active
- 2016-03-02 KR KR1020177024170A patent/KR102003625B1/ko active IP Right Grant
- 2016-03-02 JP JP2017503701A patent/JP6652124B2/ja active Active
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004000932A (ja) * | 2002-04-19 | 2004-01-08 | Seiko Epson Corp | デバイスの製造方法、デバイス及び電子機器 |
JP2004290958A (ja) * | 2003-03-11 | 2004-10-21 | Seiko Epson Corp | パターンの形成方法及びパターン形成装置、デバイスの製造方法、導電膜配線、電気光学装置、並びに電子機器 |
JP2006237586A (ja) * | 2005-01-28 | 2006-09-07 | Semiconductor Energy Lab Co Ltd | 半導体装置、電子機器、半導体装置の作製方法 |
JP2007000755A (ja) * | 2005-06-23 | 2007-01-11 | Seiko Epson Corp | 成膜方法および機能性膜、並びに電気光学装置、電子機器 |
JP2007083227A (ja) * | 2005-08-26 | 2007-04-05 | Seiko Epson Corp | 層形成方法、アクティブマトリクス基板の製造方法、および多層配線基板の製造方法 |
WO2014030647A1 (ja) * | 2012-08-20 | 2014-02-27 | コニカミノルタ株式会社 | 導電性材料を含む平行線パターン、平行線パターン形成方法、透明導電膜付き基材、デバイス及び電子機器 |
JP2015012046A (ja) * | 2013-06-26 | 2015-01-19 | コニカミノルタ株式会社 | 導電性細線の形成方法並びにこれに用いられる線及び基材 |
WO2015111731A1 (ja) * | 2014-01-24 | 2015-07-30 | コニカミノルタ株式会社 | パターン形成方法、透明導電膜付き基材、デバイス及び電子機器 |
JP2015155086A (ja) * | 2014-02-20 | 2015-08-27 | コニカミノルタ株式会社 | 塗膜形成方法、透明導電膜付き基材、デバイス及び電子機器 |
WO2015199204A1 (ja) * | 2014-06-25 | 2015-12-30 | コニカミノルタ株式会社 | パターン形成方法、透明導電膜付き基材、デバイス及び電子機器 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016168575A (ja) * | 2015-03-14 | 2016-09-23 | コニカミノルタ株式会社 | パターン形成装置及びパターン形成方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20170110111A (ko) | 2017-10-10 |
CN107249759A (zh) | 2017-10-13 |
KR102003625B1 (ko) | 2019-07-24 |
JPWO2016140284A1 (ja) | 2017-12-14 |
JP6652124B2 (ja) | 2020-02-19 |
CN107249759B (zh) | 2020-06-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6007776B2 (ja) | 平行線パターン形成方法、透明導電膜付き基材の製造方法、デバイス及び電子機器の製造方法 | |
KR101792585B1 (ko) | 도전성 재료를 포함하는 평행선 패턴, 평행선 패턴 형성 방법, 투명 도전막을 구비한 기재, 디바이스 및 전자 기기 | |
JP6331457B2 (ja) | 塗膜形成方法、透明導電膜付き基材、デバイス及び電子機器 | |
WO2015199204A1 (ja) | パターン形成方法、透明導電膜付き基材、デバイス及び電子機器 | |
JP6508062B2 (ja) | パターン形成方法、透明導電膜付き基材、デバイス及び電子機器 | |
CN106470530B (zh) | 功能性细线图案、带透明导电膜的基材及其制造方法 | |
JP6645515B2 (ja) | 透明導電体の製造方法及び透明導電体 | |
JP6717316B2 (ja) | 機能性細線パターンの形成方法及び機能性細線パターン | |
JP6515928B2 (ja) | メッシュ状の機能性パターンの形成方法、メッシュ状の機能性パターン及び機能性基材 | |
WO2016140284A1 (ja) | パターン形成方法、透明導電膜付き基材、デバイス及び電子機器 | |
KR102282834B1 (ko) | 패턴, 패턴을 갖는 기재 및 터치 패널 | |
WO2016148036A1 (ja) | 導電性パターン、導電性パターンの製造方法、タッチパネル及び液晶表示装置 | |
JP7073860B2 (ja) | 機能性細線付き基材の製造方法、及び、インクと基材のセット | |
WO2016080389A1 (ja) | 機能性パターン、機能性パターン付き基材及び機能性パターンの形成方法 | |
JP6406078B2 (ja) | パターン形成装置及びパターン形成方法 | |
JP6658800B2 (ja) | 機能性細線パターン、透明導電膜付き基材、デバイス及び電子機器 | |
JP6492805B2 (ja) | パターン形成方法、凹凸透明導電膜、太陽電池モジュール及び光取り出し素子 | |
JP2017033939A (ja) | 平行線パターン形成方法、透明導電膜付き基材、デバイス及び電子機器 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 16758977 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2017503701 Country of ref document: JP Kind code of ref document: A |
|
ENP | Entry into the national phase |
Ref document number: 20177024170 Country of ref document: KR Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 16758977 Country of ref document: EP Kind code of ref document: A1 |