JP5268818B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5268818B2
JP5268818B2 JP2009176495A JP2009176495A JP5268818B2 JP 5268818 B2 JP5268818 B2 JP 5268818B2 JP 2009176495 A JP2009176495 A JP 2009176495A JP 2009176495 A JP2009176495 A JP 2009176495A JP 5268818 B2 JP5268818 B2 JP 5268818B2
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Prior art keywords
layer
thin film
film transistor
film
semiconductor
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Japanese (ja)
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JP2010056539A (ja
JP2010056539A5 (ja
Inventor
舜平 山崎
秀和 宮入
健吾 秋元
康次郎 白石
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of JP2010056539A5 publication Critical patent/JP2010056539A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Shift Register Type Memory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2009176495A 2008-07-31 2009-07-29 半導体装置 Active JP5268818B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009176495A JP5268818B2 (ja) 2008-07-31 2009-07-29 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008197145 2008-07-31
JP2008197145 2008-07-31
JP2009176495A JP5268818B2 (ja) 2008-07-31 2009-07-29 半導体装置

Related Child Applications (3)

Application Number Title Priority Date Filing Date
JP2011019459A Division JP5480174B2 (ja) 2008-07-31 2011-02-01 半導体装置
JP2012003824A Division JP5409818B2 (ja) 2008-07-31 2012-01-12 半導体装置
JP2012003959A Division JP5409819B2 (ja) 2008-07-31 2012-01-12 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2010056539A JP2010056539A (ja) 2010-03-11
JP2010056539A5 JP2010056539A5 (ja) 2012-08-16
JP5268818B2 true JP5268818B2 (ja) 2013-08-21

Family

ID=41607404

Family Applications (12)

Application Number Title Priority Date Filing Date
JP2009176495A Active JP5268818B2 (ja) 2008-07-31 2009-07-29 半導体装置
JP2011019459A Active JP5480174B2 (ja) 2008-07-31 2011-02-01 半導体装置
JP2012003959A Active JP5409819B2 (ja) 2008-07-31 2012-01-12 半導体装置の作製方法
JP2012003824A Active JP5409818B2 (ja) 2008-07-31 2012-01-12 半導体装置
JP2014025020A Active JP5789685B2 (ja) 2008-07-31 2014-02-13 半導体装置
JP2015153094A Active JP6023857B2 (ja) 2008-07-31 2015-08-03 半導体装置
JP2016198643A Active JP6417378B2 (ja) 2008-07-31 2016-10-07 半導体装置
JP2018189901A Withdrawn JP2019033274A (ja) 2008-07-31 2018-10-05 半導体装置
JP2020114104A Active JP7066783B2 (ja) 2008-07-31 2020-07-01 半導体装置
JP2022073457A Withdrawn JP2022106865A (ja) 2008-07-31 2022-04-27 半導体装置
JP2024102191A Active JP7766748B2 (ja) 2008-07-31 2024-06-25 半導体装置
JP2025181820A Pending JP2026012287A (ja) 2008-07-31 2025-10-28 半導体装置

Family Applications After (11)

Application Number Title Priority Date Filing Date
JP2011019459A Active JP5480174B2 (ja) 2008-07-31 2011-02-01 半導体装置
JP2012003959A Active JP5409819B2 (ja) 2008-07-31 2012-01-12 半導体装置の作製方法
JP2012003824A Active JP5409818B2 (ja) 2008-07-31 2012-01-12 半導体装置
JP2014025020A Active JP5789685B2 (ja) 2008-07-31 2014-02-13 半導体装置
JP2015153094A Active JP6023857B2 (ja) 2008-07-31 2015-08-03 半導体装置
JP2016198643A Active JP6417378B2 (ja) 2008-07-31 2016-10-07 半導体装置
JP2018189901A Withdrawn JP2019033274A (ja) 2008-07-31 2018-10-05 半導体装置
JP2020114104A Active JP7066783B2 (ja) 2008-07-31 2020-07-01 半導体装置
JP2022073457A Withdrawn JP2022106865A (ja) 2008-07-31 2022-04-27 半導体装置
JP2024102191A Active JP7766748B2 (ja) 2008-07-31 2024-06-25 半導体装置
JP2025181820A Pending JP2026012287A (ja) 2008-07-31 2025-10-28 半導体装置

Country Status (5)

Country Link
US (8) US8129717B2 (https=)
JP (12) JP5268818B2 (https=)
KR (14) KR101617239B1 (https=)
CN (6) CN102569189B (https=)
TW (11) TWI770659B (https=)

Families Citing this family (322)

* Cited by examiner, † Cited by third party
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TWI770659B (zh) 2008-07-31 2022-07-11 日商半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
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JP5480554B2 (ja) * 2008-08-08 2014-04-23 株式会社半導体エネルギー研究所 半導体装置
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