TW201417172A - 用以改良控制之利用直流電輔助射頻功率的半導體處理 - Google Patents

用以改良控制之利用直流電輔助射頻功率的半導體處理 Download PDF

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TW201417172A
TW201417172A TW102127133A TW102127133A TW201417172A TW 201417172 A TW201417172 A TW 201417172A TW 102127133 A TW102127133 A TW 102127133A TW 102127133 A TW102127133 A TW 102127133A TW 201417172 A TW201417172 A TW 201417172A
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power supply
upper cover
plasma
gate electrode
cover assembly
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TW102127133A
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TWI594319B (zh
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Jang-Gyoo Yang
xing-long Chen
Soo-Nam Park
Jong-Hoon Baek
Saurabh Garg
Shankar Venkataraman
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Applied Materials Inc
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Abstract

所揭露之半導體處理系統包括一處理腔室。該處理腔室包括一上蓋組件、柵電極、傳導性插件，以及接地電極。每一構件係耦接於一或多個電源供應器，該等電源供應器可運作以於該處理腔室內產生一電漿。每一構件係經由置放複數個絕緣構件而電氣隔離。該一或多個電源供應器係利用切換機制而電氣耦接於該處理腔室。開關係可切換以使該一或多個電源供應器電氣耦接至該處理腔室的構件。

Description

用以改良控制之利用直流電輔助射頻功率的半導體處理 【相關發明相互參照】
此申請案主張在2012年8月2日申請之美國臨時申請案第61/678,964號(名稱為「Semiconductor Processing With DC Assisted RF Power for Improved Control」)的優先權，該文件的整體揭露內容係基於所有目的而藉由引用形式併入本文。
本案技術是與半導體處理和設備有關。更具體而言，本案技術是與處理系統電漿構件有關。
積體電路可藉由會在基板表面上產生錯綜複雜的圖案化材料層之處理所製成。於一基板上產生圖案化材料需要受控制的方法以進行暴露材料的移除。化學蝕刻係為各種目的而被使用，包括將光阻劑中的圖案轉移到下層層體中，薄化層體，或薄化已經存在於表面上之特徵結構的側向維度。通常需要使蝕刻處理能蝕刻一種材料比蝕刻另一種材料更快，以增進例如圖案轉移處理。此一蝕刻處理即稱為對第一種材料有選擇性。因為材料、電路和處理的多樣性，蝕刻處 理係已經發展為對各種材料具有選擇性。
在局部電漿(形成於基板處理區域內)中產生的乾式蝕刻可穿透更多受限的溝槽並呈現出較少的細緻剩餘結構變形。然而，當積體電路技術持續減少尺寸時，輸送前驅物的設備會影響所使用之前驅物和電漿物種的均勻度和品質，且電漿的形成和輪廓也會影響薄膜沉積與蝕刻的品質。
因此，需要改良的系統構件，這些系統構件可被有效地用於電漿環境，以提供電漿與電漿特性之改良控制。本案技術係處理這些和其他需求。
所說明之半導體處理系統包括一處理腔室，該處理腔室包括一上蓋組件、柵電極、傳導性插件與接地電極。每一個構件係耦接於一或多個電源供應器，該等電源供應器係可運作以於該處理腔室中產生電漿。每一個構件係經由置放複數個絕緣構件而電氣隔離。該一或多個電源供應器係利用切換機制而電氣耦接於處理腔室。開關係可切換以使該一或多個電源供應器電氣耦接至處理腔室的構件。
一種例示的處理系統包括一處理腔室，該處理腔室包括一上蓋組件，該上蓋組件限定一前驅物入口，前驅物物種係透過該前驅物入口而輸送。該腔室也包括一接地電極與配置在該上蓋組件和該接地電極之間的一柵電極，並於該柵電極和該上蓋組件之間的腔室內限定一第一電漿區域，以及於該柵電極和該接地電極之間的腔室內限定一第二電漿區域。該腔室也包括一傳導性插件，該傳導性插件係配置在該 上蓋組件與該柵電極之間、在該第一電漿區域的一週邊處。該腔室進一步包括一絕緣構件，該絕緣構件係置放以使該柵電極自該傳導性插件電氣隔離。該處理系統也包括電氣耦接於該上蓋組件之一第一電源供應器，以及電氣耦接於該上蓋組件、該柵電極或該傳導性插件中至少其一的一第二電源供應器。
一開關(例如一第一開關)係電氣耦接於該第二電源供應器。該開關係可切換以使該第二電源供應器可電氣耦接於該上蓋組件、該柵電極或該傳導性插件中之一者，還可電氣耦接該處理腔室的其他傳導性部分。該處理系統可另外包括一第二開關，該第二開關係可切換以電氣耦接該上蓋組件、該接地電極或該柵電極中的至少兩者，使得施加至所耦接結構中其一的電位將可被施加至所耦接的兩個結構。該處理系統可具有第一開關，該第一開關係切換以使該第二電源供應器電氣耦接於該傳導性插件。該第二開關也可切換以電氣耦接該柵電極與該接地電極。
此外，該第二電源供應器係配置以輸送一負電壓至該傳導性插件，且該第一電源供應器係配置以於電子通量被引導至該柵電極的該第一電漿區域中引發一電漿。該第二電源供應器也配置以輸送一正電壓至該傳導性插件，且該第一電源供應器係配置以於離子通量被引導至該柵電極的該第一電漿區域中引發一電漿。該第一開關亦切換以使該第二電源供應器電氣耦接於該上蓋組件，使得該第一電源供應器與該第二電源供應器兩者都電氣耦接於該上蓋組件。該第二開關 也可切換以電氣耦接該柵電極與該接地電極。該第二電源供應器也可配置以對該上蓋組件提供固定電壓，且該第一電源供應器係配置以對該上蓋組件提供脈衝式頻率功率。
該處理系統也可配置為該第一開關可切換以使該第 二電源供應器電氣耦接於該上蓋組件，使得該第一電源供應器與該第二電源供應器兩者都電氣耦接於該上蓋組件；且第二開關係切換以電氣耦接該柵電極和該上蓋組件。第二電源供應器亦配置以對該上蓋組件提供固定電壓，且該第一電源供應器係配置以對該上蓋組件提供脈衝式頻率功率。同時，第一開關係切換以使該第二電源供應器電氣耦接於該柵電極。在另一配置中，該第二電源供應器係配置以對該柵電極提供固定電壓，而該第一電源供應器係配置以對該上蓋組件提供脈衝式頻率功率。在所揭示的具體實施例中，該第一電源供應器係一RF電源供應器，且該第二電源供應器係一DC電源供應器。
本文也揭露一種用於在一半導體處理腔室中產生一 電漿的方法，且該方法包括使一第一電源供應器耦接於該處理腔室上蓋組件，以於該處理腔室內形成一電漿。該方法也包括使一第二電源供應器耦接於該處理腔室，並以該第二電源供應器調整該電漿。所述調整包括各種操作，包括以該第二電源供應器施加一負電壓以增加電子通量。同樣的，所述調整包括以該第二電源供應器施加一正電壓以增加離子通量。
該方法包括使該第二電源供應器電氣耦接於一開 關，該開關係可切換地耦接於該處理腔室的多個傳導性區段。在一實例中，該第二電源供應器係切換為耦接於該上蓋組件。該方法包括操作該第一電源供應器，使得該第一電源供應器對該上蓋組件提供脈衝功率。該方法也包括利用一RF電源供應器作為該第一電源供應器，並利用一DC電源供應器作為該第二電源供應器。
相較於傳統設備，本案技術提供了數種益處。舉例 而言，可調整式電漿可增加對處理操作中使用之電漿輪廓的控制。除此之外，藉由調整離子/電子通量輪廓，即可於正在進行處理時原位調整蝕刻操作。結合下述說明與如附圖式，這些與其他具體實施例、以及具體實施例的許多優點和特徵係於下文中詳細說明。
100‧‧‧處理系統
105‧‧‧處理腔室
110‧‧‧流體供應系統
115‧‧‧上蓋/上蓋組件/熱電極
120‧‧‧柵電極
122‧‧‧孔洞
125‧‧‧接地電極/上蓋間隔物
130‧‧‧絕緣器
135‧‧‧電漿激發區域
140‧‧‧氣體入口
145‧‧‧遠端電漿系統
150‧‧‧氣體供應區域
155‧‧‧RF產生器
160‧‧‧反應區域
165‧‧‧台座
200‧‧‧處理系統
205‧‧‧腔室
210‧‧‧前驅物入口
215‧‧‧上蓋組件
220‧‧‧柵電極
225‧‧‧接地電極
230‧‧‧絕緣區段
235‧‧‧傳導性插件
240a-240c‧‧‧絕緣構件
245‧‧‧第一電漿區域
250‧‧‧第二電漿區域
255、260‧‧‧電源供應器
265、270‧‧‧開關
300‧‧‧處理系統
305‧‧‧腔室
310‧‧‧前驅物入口
315‧‧‧上蓋組件
320‧‧‧柵電極
325‧‧‧接地電極
335‧‧‧傳導性插件
340a-340c‧‧‧絕緣構件
345‧‧‧電漿區域
355、360‧‧‧電源供應器
365、370‧‧‧開關
400‧‧‧處理系統
405‧‧‧腔室
410‧‧‧前驅物入口
415‧‧‧上蓋組件
420‧‧‧柵電極
425‧‧‧接地電極
435‧‧‧傳導性插件
440a-440c‧‧‧絕緣構件
445‧‧‧電漿區域
455、460‧‧‧電源供應器
465、470‧‧‧開關
500‧‧‧處理系統
505‧‧‧腔室
510‧‧‧前驅物入口
515‧‧‧上蓋組件
520‧‧‧柵電極
525‧‧‧接地電極
535‧‧‧傳導性插件
540a-540c‧‧‧絕緣構件
555、560‧‧‧電源供應器
565、570‧‧‧開關
600‧‧‧處理系統
605‧‧‧腔室
610‧‧‧前驅物入口
615‧‧‧上蓋組件
620‧‧‧柵電極
625‧‧‧接地電極
635‧‧‧傳導性插件
640a-640c‧‧‧絕緣構件
645‧‧‧電漿區域
655、660‧‧‧電源供應器
665、670‧‧‧開關
710-730‧‧‧操作步驟
參照說明書的剩餘部分及圖式，即可進一步理解本案技術的本質和優點。
第1圖說明根據本案技術之具體實施例的一處理系統的簡化截面圖。
第2圖說明根據本案技術之具體實施例的一處理腔室組件的簡化截面圖。
第3圖說明根據本案技術之具體實施例的一處理系統的簡化截面圖，其中該處理系統具有電漿產生構件。
第4圖說明根據本案技術之具體實施例的另一處理系統的簡化截面圖，其中該另一處理系統具有電漿產生構件。
第5圖說明根據本案技術之具體實施例的另一處理 系統的簡化截面圖，其中該另一處理系統具有電漿產生構件。
第6圖說明根據本案技術之具體實施例的另一處理系統的簡化截面圖，其中該另一處理系統具有電漿產生構件。
第7圖說明根據本案技術之具體實施例的一種用於調整電漿的例示方法的操作步驟。
在如附圖式中，類似的構件及/或特徵具有相同的元件符號。此外，相同類型的各種構件係藉由在元件符號之後有一個可區分該些類似構件及/或特徵的字母來加以區分。如果在說明書中僅使用第一元件符號，則說明內容係可應用至任何一個具有相同的第一元件符號的類似構件，不論後綴字母為何。
系統與方法係描述以於一半導體處理腔室內部產生及/或控制電漿。電漿可起源於處理腔室內部、一遠端電漿單元中的處理腔室外部、或兩者。在腔室內部，在使用電氣耦接於處理腔室的構件(即作為電極的構件)之電源供應器下，電漿係受限制並與一基板晶圓分隔。在某些實例中，該等構件也作用為一氣體/前驅物分配系統的部分，且包含一抑制器及/或噴淋頭，以及該處理腔室的其他構件。在其他實例中，構件可作用以於一電漿產生區域和一氣體反應區域之間定義一隔離物，其中該氣體反應區域可用以蝕刻及/或於基板晶圓的暴露表面上沉積材料。
本案技術包括在一半導體處理腔室內之電漿調制的改良功率和控制方案。傳統的電漿產生僅僅以受限的調整提 供一內部電漿，但本案提出的技術可經由電漿操縱而允許蝕刻化學物質的改良控制與調制。藉由這麼做，可依需要而為各種操作條件調整蝕刻深度、輪廓與選擇性。
例示的處理系統配置包括一或多個電源供應器，該 等電源供應器可使用作為一電容耦合電漿(CCP)系統的一部分。在某些具體實施例中，一RF電源供應器可電氣耦接於該處理腔室的一部分，而一DC電源供應器可耦接於該處理腔室的相同或一不同部分。該DC電源供應器可使處理腔室內的電漿在RF電源供應器的循環期間得以維持，連同所產生之電漿的操縱。操縱包括調整導向基板晶圓或腔室柱的特定蝕刻化學物質，以及所使用之離子的功能能力。
第1圖說明根據本案技術之一處理系統100的簡化 截面圖。該處理系統視需要地包括位於處理腔室105外部的構件，例如流體供應系統110。處理腔室105保持一個不同於周圍壓力的內部壓力。舉例而言，在處理期間，處理腔室內部的壓力約為10mTorr至約20Torr。
CCP系統可由數個處理腔室構件所組成，且可作用 以於處理腔室105內部產生一電漿。CCP系統的構件可包括由數個構件所組成的一上蓋組件或熱電極115，包括一氣體盒、一阻擋器，以及一面板。這些構件可直接或間接地機械耦接以作用為一單一電極。CCP系統也包括一柵電極120，該柵電極120同樣由一或多個腔室構件所組成。舉例而言，柵電極120可由一離子抑制器或阻擋器及/或一岐管或噴淋頭所組成，以向基板晶圓輸送前驅物。同樣的，該等構件可彼此 電氣耦接以作用為一單一電極。CCP系統也包括一接地電極125，該接地電極125包括一或多個腔室構件(包括一上蓋間隔物)。
在某些具體實施例中，上蓋115和柵電極120為導 電電極，該等導電電極可彼此電氣偏壓，以產生一個夠強而足以使各電極之間的氣體離子化為電漿的電場。一電氣絕緣器130可分隔上蓋115和柵電極120，以避免在產生電漿時造成電極短路。電氣絕緣器130可包括多個材料層，如下文關於第二圖之具體實施例所更詳細說明者，且可替代地包括其他電極層。上蓋115的電漿暴露表面、絕緣器130，和柵電極120可於處理腔室105中定義一電漿激發區域135。
電漿產生氣體可從一氣體供應系統110移動通過一 氣體入口140而進入電漿激發區域135。電漿產生氣體可用以撞擊激發區域135中的電漿，或可維持已經形成的電漿。在某些具體實施例中，電漿產生氣體在向下游移動通過入口140而至電漿激發區域135之前，可在位於處理腔室105外部的一遠端電漿系統145中已經至少部分轉化為電漿激發物種。 當電漿激發物種抵達電漿激發區域135時，電漿激發物種會進一步激發，並受電漿激發區域中所產生的電漿的特性影響。在某些操作步驟中，CCP系統提供的增加激發程度會根據基板處理順序及/或條件而隨著時間而改變。
電漿產生氣體及/或電漿激發物種會通過上蓋115中 的複數個孔洞(未圖示)以更均勻地輸送至電漿激發區域135中。例示配置包括使入口140開放至一氣體供應區域150中 (其中該氣體供應區域150可藉由上蓋115而與電漿激發區域135分隔)，使得氣體/物種流經上蓋115中的孔洞而至電漿激發區域135中。可選擇結構性與操作性特徵來避免電漿從電漿激發區域135顯著回流返回供應區域150、入口140和流體供應系統110中。結構性特徵包括上蓋115中之孔洞的維度尺寸和截面幾何形狀的選擇，使回流電漿去活化。操作性特徵包括維持氣體供應區域150和電漿激發區域135之間的壓力差，該壓力差可維持電漿單方向流動通過柵電極120。
如上所述，上蓋115和柵電極120可分別作用為一第一電極與第二電極，因此上蓋115及/或柵電極120可接受一電荷。在這些配置中，電力(例如RF功率)可被施加至上蓋115、柵電極120、或兩者。在一實例中，電力被施加至上蓋115，而柵電極120可接地。基板處理系統100可包括一RF產生器155，該RF產生器155提供電力至上蓋115及/或腔室105的一或多個其他構件。帶有電荷的上蓋115會促進電漿激發區域135中的電漿均勻分佈，亦即減少侷限化的電漿。為能使電漿在電漿激發區域135中形成，絕緣器130可電氣絕緣上蓋115和柵電極120。絕緣器130可由陶瓷製成，且具有高崩潰電壓以避免放電。在下文將更詳細說明的其他具體實施例中，絕緣器130包括可進一步用以影響所產生的電漿並可包含其他電極材料的數個構件。CCP系統也包括如下文將進一步說明的一DC電源供應器系統以調變在腔室內部的RF產生之電漿。CCP系統可進一步包括一冷卻單元(未 圖示)，該冷卻單元包括一或多個冷卻流體通道，以利用一循環冷卻劑(例如水)來冷卻暴露於電漿的表面。該冷卻單元可包括耦接於腔室105壁部外部的護封，以及在腔室壁部內部內所定義之通道，該等通道可使一溫度控制流體循環。
柵電極120包括複數個孔洞122，這些孔洞122抑 制帶離子電荷物種遷移出電漿激發區域135，同時使未帶電荷的中性或自由基物種通過柵電極120。未帶電荷的物種可包括利用較低反應性之載氣而被傳送通過孔洞122的高反應性物種。如上所述，會減少、且在某些實例中甚至完全抑制離子物種之遷移通過孔洞122。控制通過柵電極120的離子物種量可提供對於與下方晶圓基板接觸的氣體混合物之增加控制，續而增加沉積及/或氣體混合物的蝕刻特性的控制。舉例而言，氣體混合物的離子濃度的調整可顯著調整其蝕刻選擇性(例如SiOx：SiNx蝕刻比例、多晶矽(Poly-Si)：SiOx蝕刻比例等)，同時移動一沉積之介電質材料的共形性對可流動性的平衡。這些特徵將於下文中更詳細說明。
複數個孔洞122可配置以控制活化氣體(亦即離子 性、自由基、及/或中性物種)通過柵電極120。舉例而言，孔洞122的徑長比(亦即，孔洞直徑對長度的比值)及/或孔洞122的幾何形狀可受控制，因此可減少通過柵電極120的活化氣體中帶有離子電荷的物種的流量。在柵電極包括一電氣耦接之離子抑制器與噴淋頭的具體實施例中，離子阻擋器中的孔洞(可配置在噴淋頭上方)可具有面向電漿激發區域135的一漸縮部分以及面向該噴淋頭的一圓柱部分。圓柱部分 之形狀和大小可形成以控制通至噴淋頭的離子物種流量。也對柵電極120施加一可調整電氣偏壓，作為用以控制通過電極之離子物種流量的另一種方式。
根據是進行一沉積或一蝕刻處理，氣體與電漿激發 物種可通過柵電極120，且被引導至基板。噴淋頭(柵電極中所包含的一個構件)可進一步引導氣體或電漿物種的流動。 噴淋頭可為一雙區噴流頭，其包括多個流體通道以引導一或多種氣體的流動。該雙區噴淋頭可具有一第一通道組以使電漿激發物種流進反應區域160中，該雙區噴淋頭也具有一第二通道組，該第二通道組將一第二氣體/前驅物混合物輸送至該反應區域160中。
一流體輸送來源可耦接於該噴淋頭以輸送一前驅 物，該前驅物可分流電漿激發區域135並從噴淋頭內部經由第二組通道而進入反應區160。噴淋頭中的該第二組通道可流體耦接於一來源氣體/前驅物混合物(未圖示)，該來源氣體/前驅物混合物可針對欲執行的處理而加以選擇。舉例而言，當該處理系統可配置以於基板表面上進行蝕刻，該來源氣體/前驅物混合物可包括蝕刻劑，例如氧化劑、鹵素、水蒸氣及/或載氣，這些蝕刻劑可在反應區域160中與從噴淋頭中的第一組通道所分佈的電漿激發物種混合。電漿激發物種中的過剩離子會在物種移動通過柵電極120中的孔洞122時減少，並進一步在物種移動通過噴淋頭中的通道時減少。
該處理系統仍進一步包括一台座165，該台座165可運作以支撐和移動基板或晶圓。台座165和柵電極120底 部之間的距離有助於定義反應區域160，連同定義反應區域160的週邊之上蓋間隔物125。台座165可於處理腔室105內垂直或軸向調整，以增加或減少反應區域160，並藉由使晶圓基板相對於通過柵電極120的氣體之重新定位而進行晶圓基板的沉積或蝕刻。台座165具有一熱交換通道，一熱交換流體可流經該熱交換通道以控制晶圓基板的溫度。熱交換流體的循環可使基板溫度可維持在相對低的溫度(例如大約-20℃至約90℃)。例示的熱交換流體包括乙二醇和水。
台座165亦配置有一加熱元件，例如一電阻加熱元件，以使基板維持在加熱溫度(例如約90℃至約1100℃)。例示的加熱元件可包括內嵌在基板支撐盤中的一單迴圈加熱器元件，該單迴圈加熱器元件以平行同心圓的形式產生兩次或更多次全轉。加熱器元件的一外部部分可於鄰近支撐盤的週邊而運作，而一內部部分則在具有較小半徑的一同心圓的路徑上運作。對該加熱器元件的佈線可通過台座的莖幹部。
在2011年10月3日所申請的美國專利申請案第13/251,714號中更完整說明了雙區噴淋頭、以及處理系統與腔室，該申請案可基於所有目的而藉由引用形式、在沒有與本案所主張特徵和說明內容不一致的程度下併入本文。
第2圖說明了根據本案技術的具體實施例之處理腔室組件的簡化截面示意圖，該示意圖說明了用於半導體製造處理之一部分的處理腔室205。腔室205可類似於第1圖中所示之處理腔室105。腔室205可包括一上蓋組件215，其在某些方面可相當於第1圖所示之上蓋組件115。舉例而言，上蓋 組件215可定義前驅物入口210，一前驅物物種可輸送通過該前驅物入口210。一遠端電漿單元(未圖示)可流體耦接於該前驅物入口210，以將自由基前驅物物種提供至處理腔室205中。電漿單元所提供的自由基前驅物可與處理腔室205內的其他氣體混合，這些其他氣體可經由交替的通道(未圖示)而分別地流至腔室205中。
處理腔室205可包括一柵電極220，該柵電極220 包括一或多個電氣耦接之腔室構件。柵電極220可包括一或多個岐管，且可包括一離子阻擋器、以及一噴淋頭(例如前述之雙區噴淋頭)。該處理腔室205可包括一接地電極225，該接地電極可由其他腔室205構件所組成。舉例而言，接地電極225係一上蓋間隔物或處理腔室205的其他壁部構件。 接地電極係可替代地包含對一基板台座(未圖示)之一接地連接，但這並非為本案技術之具體實施例所必須。
處理腔室205可包含與第1圖所示之絕緣器130類 似的一絕緣區段230。然而，如在處理腔室205中所說明者，絕緣區段230包括多數個構件。處理腔室205可包括一傳導性插件235，該傳導性插件235是配置在上蓋組件215和柵電極220之間。傳導性插件235係一單件之傳導材料，該傳導性插件235具有環形形狀且配置作為該腔室205壁部的一部分。
在處理腔室205中可另外包括有複數個絕緣構件以 電氣隔離該等腔室構件。舉例而言，絕緣構件240a-240c可位於每一個傳導性構件和腔室外殼的電極之間。絕緣構件240 可具一單一環形形狀，或由數個區段組成，該數個區段在組合時可於腔室構件之間提供一電氣阻障。舉例而言，絕緣構件可阻擋電荷的流動，且含有具高介電強度的材料。例示的絕緣構件包括陶瓷板，陶瓷板可為環形且配置在構件(包含傳導性插件235)上方和下方。多層的絕緣構件可置放在腔室205中，以進一步隔離腔室的構件。該複數個絕緣構件中至少其一可置放為使傳導性插件235與柵電極220電氣隔離。該等絕緣構件可另外使傳導性插件235和柵電極220與上蓋組件215和接地電極225隔離。以此方式，每一個傳導性區段皆與處理腔室205的任一其他傳導性區段電氣隔離。
腔室構件可於處理腔室內定義電漿區域。一第一電 漿區域245可由上蓋組件215和柵電極220至少部分定義於上與下方。傳導性插件是沿著第一電漿區域245的週邊而配置。一第二電漿區域250可由柵電極220至少部分定義於上方。該第二電漿區域250可由一基板台座(未圖示)至少部分定義於下方，其中該基板台座係可垂直移動、可軸向移動、或兩者皆可，以定義第二電漿區域250存在的區域。接地電極225可沿著第二電漿區域250的週邊而配置，或可用以產生一邊界，該邊界可至少部分定義第二電漿區域250的下界。
電源供應器255、260以及視需要配置的電氣開關265、270可耦接於處理腔室205，以產生具電漿控制之一處理系統200。該等視需要之開關可用以電氣耦接系統的構件。舉例而言，電氣開關265可電氣耦接於電源供應器260，或是耦接於電源供應器255和260，或是耦接於電源供應器255， 或是耦接於任一電源供應器，而一另一開關(未圖示)可用以電氣耦接另一電源供應器。在另外一個替代方式中，開關可經分通以使每一個電源供應器255、260直接耦接至部分的處理腔室。電源供應器255、260可為半導體製造中可用的任何電源供應形式，且可包括RF電源供應器和DC電源供應器等。視需要之開關270可用以電氣耦接處理腔室205的構件。 舉例而言，開關270係可切換以電氣耦接上蓋組件215、傳導性插件235、柵電極220和接地電極225中的任兩個或更多者。可替代地，視需要之開關270可經分通以直接電氣耦接該處理腔室205的一或多個構件。開關265、270可提供額外的功能，使得可在處理操作期間的任何時間點調整所產生之電漿類型以及電漿的位置。視需要之開關265、270以及電源供應器255、260可另外包括遠端控制，以操縱該等構件的設定，如下文將進一步說明者。
第3圖說明了根據本案技術之具體實施例、具有電漿產生構件的一處理系統300的簡化截面示意圖。處理系統300的腔室305可包含與先前針對第2圖所說明的類似構件。腔室305可定義一氣體入口310，反應性前驅物物種可從例如一遠端電漿單元(未圖示)而輸送通過該氣體入口310。腔室305包括一上蓋組件315、傳導性插件335、柵電極320和接地電極325，以及其他的腔室構件。上蓋構件315、傳導性插件335、柵電極320、以及接地電極325可藉由複數個絕緣構件340a-340c中的一或多者而與其他列出的構件電氣隔離。系統300可另外包含電源供應器355、360，並使電源供應器電 氣耦接至腔室、或使腔室中的構件彼此電氣耦接之視需要的開關365、370。
如第3圖所示，電源供應器355可電氣耦接於上蓋 組件315。在某些具體實施例中，電源供應器355係一RF電源供應器。當在運作時，電源供應器對上蓋組件315提供一電荷，該上蓋組件315可作用為電漿產生之一熱電極。柵電極320可耦接於接地電極325，藉此定義一電漿區域345，於該電漿區域345中產生電漿，或於該電漿區域345中調整電漿條件。柵電極320可直接耦接於接地電極325、或者是利用絕緣構件340c而電氣隔離。絕緣可藉由電氣耦接柵電極320和接地電極325而加以克服。利用一傳導性裝置來電氣耦接該等電極，且一例示系統可使用視需要配置之開關370，該開關370係可切換以電氣耦接構件。
RF電源供應器355可配置以根據所執行的處理而對 上蓋組件315輸送一可調整大小量的功率。例示的電源供應器可配置以於0至約3kW之功率範圍內輸送一可調整大小量之功率。例如在沉積處理中，輸送至上蓋組件315的功率可經調整以設定沉積層的共形性。所沉積的介電薄膜一般在較低電漿功率下係更可流動，且當電漿功率增加時即從可流動轉換為共形性。舉例而言，當電漿功率從約1000瓦降低至約100瓦或更低(例如約900、700、500、300、200、100、50、25瓦、或更低)時，在電漿激發區域345中所維持的一含氬電漿可產生一更可流動的矽氧化物層，而當電漿功率從約1000瓦增加至更高(例如約1200、1500、1800、2000、2200、 2400、2600、2800瓦或更高)時則為一較呈共形性的層體。隨著電漿功率從低向高增加，自一可流動至共形性沉積薄膜的轉變就相對為平順和連續，或進展通過相對離散的臨界點。電漿功率(無論是單獨、或是在其他沉積參數以外)可經調整以於所沉積薄膜的共形性和可流動性性質之間選擇一平衡。就蝕刻處理而言，使功率從3kW向下降低至低於1kW或更低係可影響待蝕刻材料的移除速率，並可降低所沉積之薄膜被移除的速率。使功率從1kW向上增加至3kW係可產生較高的沉積薄膜移除速率。
或者是，就例示蝕刻處理而言，可調整RF功率的頻率和工作週期以調整薄膜的化學物質和通量特性。發明人也已經確認了RF電源供應器的某些頻率會對腔室構件(例如柵電極)產生衝擊。可使用各種頻率，且在RF電源供應器355的連續運作期間，可使用高達約400kHz、介於約400kHz至約13.56MHz之間、介於約13.56MHz至約60MHz之間、以及高於60MHz的頻率。在某些運作期間，增加頻率係可更有效率的產生蝕刻劑自由基，以及可減少對腔室構件所產生的損害。
在電源供應器355的運作期間也可使用電源供應器360，且在某些具體實施例中，電源供應器360係一DC電源供應器。例示的DC電源供應器可配置以在約500V至約-500V之間進行可調整的控制。可替代的，電源供應器360可配置以於約400V至約-400V之間、約300V至約-300V之間、約200V至約-200V之間、約100V至約-100V之間等、或 更低進行可調整的控制。電源供應器360可直接耦接於腔室305的構件，或利用可切換以使電源供應器360電氣耦接至腔室305的構件之開關365而電氣耦接至構件。在一具體實施例中，DC電源供應器360可電氣耦接於傳導性插件335。
RF電源供應器355與DC電源供應器360可一起運 作、交替運作、或以某些其他組合方式運作。在一例示運作中，如第3圖所示，RF電源供應器355可於約0kW與約3000kW之間連續運作，以維持電漿反應區域345中的電漿。DC電源供應器360可為未使用或關閉、可為連續地運作、或是可在運作期間呈脈衝式。DC功率的輔助可對正被蝕刻的材料產生作用。舉例而言，若DC偏壓是正的，則有較多來自電漿的離子通量會移動至柵電極、接著至基板晶圓。若DC偏壓是負的，則有較多的電子通量被引導至柵電極。藉由調整偏壓以及DC電源供應器360的功率，即可調制電漿的蝕刻特性。 因此，根據基板的特性、或被蝕刻的薄膜的特性，可調整蝕刻劑的化學物質以產生最佳的蝕刻結果。舉例而言，被調整以增加離子或電子通量的蝕刻劑化學物質越多，則有越多的蝕刻劑流體可被選擇朝向一或多個沉積薄膜。藉由結合DC電源供應器360與RF電源供應器355，即可得到比僅單獨為RF電源供應器更多的化學物質調制。利用提高的蝕刻劑化學物質調制，即可得到增進的蝕刻選擇性，也會為更敏感的沉積薄膜移除提供增進的能力。具移除速率之選擇性可使較少的材料被整體移除，這可允許一開始就沉積較少的材料。
由第3圖所說明之一替代運作方式包括RF電源供 應器355之脈衝化、以及DC電源供應器360的連續或脈衝式運作。RF電源供應器355可配置以從低達約1000kHz或更高的連續波提供RF脈衝之連續可調整調制。可替代地，可從連續波至約0.1kHz、或者是約0.1kHz、1kHz、10kHz、100kHz、1000kHz或更高之離散增量來調整RF。在另外的具體實施例中，RF電源供應器355係可脈衝化為任何各類數值或所列數值之間的任何數值範圍。
可替代地、或同時地調制工作週期。為RF電源供 應器調整工作週期或主動狀態的時間係可影響電漿中所產生的離子通量。舉例而言，當發生工作週期降低時，即會產生離子電流的相對或實質相稱減少。在蝕刻處理期間，藉由減少離子電流，即可成比例地降低蝕刻速率。然而，當一RF電源供應器循環時，RF電源供應器可於循環時間中切換開啟與關閉。當RF功率循環為關閉，則所產生的電漿便散失。因此，工作週期降低量傳統上係已受到使電漿保持在一特定等級的時間所限制。然而，發明人已經確認利用例如上述配置，DC電源供應器360係可藉由在RF功率關閉的週期中保持離子和電子移動而調整化學物質。此外，藉由在RF功率關閉的週期中具有一特定大小之DC功率，即可藉由DC功率來至少部分維持電漿。在此方式中，電漿在RF功率為循環關閉時便不完全散失。這允許化學物質的進一步調整，因為蝕刻劑化學物質可在RF功率從開啟切換為關閉時調整。藉由在RF電源供應器355的某些或全部的開啟及/或關閉時間中使用DC電源供應器360，可進一步調制蝕刻劑化學物質。因此，RF功率 可進一步調制為具有可接受的減少之工作週期。因此RF功率的工作週期在運作期間可從約100%運作至約0%、低於或約75%、低於或約50%、或低於或約25%。或者是，工作週期可以約90%、80%、75%、70%、60%、50%、40%、30%、25%、20%、15%、10%、5%、或更低運作。在另外的替代配置中，電源供應器可配置以具有所列出的任何週期百分比或其間、以及任何所列週期範圍中之一可調整的工作週期。RF電源供應器的脈衝可藉由減少的及更有選擇性的移除而允許進一步調整蝕刻參數。舉例而言，當正移除大量的材料時，可使用連續供應的RF功率。在另一方面，當需要移除少量材料或更具選擇性的移除時，則使用RF脈衝。RF脈衝係可移除低於100奈米的材料量，或者是少於或約50奈米、30奈米、22奈米、15奈米、或更少，包括少達單層沉積薄膜。
第4圖說明根據本案技術之具體實施例、具有電漿 產生構件的另一種處理系統400的簡化截面示意圖。處理系統400的腔室405可包括與先前關於第2圖所說明者類似之構件。腔室405可定義一氣體入口410，反應性前驅物物種可從例如一遠端電漿單元(未圖示)而輸送通過該氣體入口410。腔室405可包括一上蓋組件415、傳導性插件435、柵電極420、與接地電極425，以及其他的腔室構件。上蓋組件415、傳導性插件435、柵電極420、以及接地電極425中的其一或多者可藉由複數個絕緣構件440a-440c中的一或多個而與其他所列構件電氣隔離。系統400可另外包括電源供應器455、460，以及使電源供應器電氣耦接至腔室、或使腔室 中的構件彼此電氣耦接之視需要而設的開關465、470。
如第4圖所示，電源供應器455可電氣耦接於上蓋組件415。在某些具體實施例中，電源供應器455是一RF電源供應器。當在運作中時，電源供應器455可對上蓋組件415提供電荷，該上蓋組件415可作為一熱電極以供電漿產生。柵電極420可耦接於接地電極425，藉此定義一電漿區域445，在該電漿區域445中有電漿產生、或可調整電漿條件。柵電極420可直接耦接於接地電極425、或者是與絕緣構件440c電氣隔離。藉由電氣耦接柵電極420和接地電極425係可克服絕緣。利用一種傳導裝置來電氣耦接電極，且一例示系統可使用視需要之開關470來電氣耦接構件。RF電源供應器455可配置為可以先前所述之任何參數調整。
電源供應器460也於電源供應器455的運作期間使用，且在某些具體實施例中為一DC電源供應器。例示的DC電源供應器可配置為可利用先前所述的任何參數進行可調整控制。DC電源供應器460可以連續或脈衝形式運作，如先前所述。如第4圖所示，DC電源供應器460可與RF電源供應器455一起耦接至上蓋組件415。電源供應器460可直接耦接於上蓋組件415或RF電源供應器455的電氣耦接，或是利用開關465而電氣耦接至上蓋組件415或RF電源供應器455的電氣耦接，其中該開關465係可切換以使DC電源供應器460耦接至腔室405的構件。
在運作時，RF電源供應器455和DC電源供應器460可如第4圖所述方式運作，以經由一種另外的電漿調制形式 來提供前驅物物種的另外的化學物質調制。自由基前驅物物種可從流體耦接至氣體入口410的一遠端電漿系統(未圖示)輸送至處理腔室405。RF電源供應器455可以連續波或呈脈衝而運作，以對上蓋組件415輸送調制功率。當連接所述配置時，電源供應器455可於一電漿區域455中產生一電漿。 上蓋組件415(作為熱電極)係一主要電漿產生區域。如前所述，以此方式之傳統運作係因電漿區域445中的電漿特性而限制了RF電源供應器455的工作週期調制。然而，在所述之例示配置中，DC電源供應器460可運作以輔助RF電源供應器455來維持電漿區域445中的電漿作用。當RF電源供應器455循環為關閉時，DC電源供應器460即可保持某些電漿。
在一實例中，DC電源供應器460可以連續形式運 作，而RF電源供應器455可呈脈衝式。DC電源供應器460在電性耦接於上蓋組件415及連續地運作時，係可於RF電源供應器455所產生的電漿區域445中維持電漿。因此，RF電源供應器係可調制為開啟與關閉，而連續運作的電源供應器460可於關閉週期中維持電漿。因此，RF電源供應器455可調制為具有減少之工作週期。舉例而言，在運作期間，RF功率的工作週期可從約100%運作至約0%、低於或大約75%、低於或大約50%、或是低於或大約25%。或者是，工作週期可以約90%、80%、75%、70%、60%、50%、40%、30%、25%、20%、15%、10%、5%、或更低運作。在另外的替代配置中，電源供應器可配置以具有所列出的任何週期百分比或其間、以及任何所列週期範圍中之一可調整的工作週期。
RF電源供應器455的脈衝能力係可加以連續調製， 如先前所述者，從連續波至約1000kHz或更高。可替代地，可從連續波至約0.01kHz、或者是約0.1kHz、1kHz、10kHz、100kHz、1000kHz或更高之離散增量來調整RF。在另外的具體實施例中，RF電源供應器455係可脈衝化為任何各類數值或所列數值之間的任何數值範圍。在脈衝化時，相較於連續波運作，離子電流會減少。因為DC電源供應器有助於在RF電源供應器455的「關閉」週期中保持電漿，因而會發生進一步的脈衝調制。因此，在一蝕刻處理中即可執行減少之蝕刻，達到少於100奈米的程度。因為離子電流在蝕刻處理期間減少，因此相同的蝕刻時間即會導致一減少之蝕刻量。 因此，經由所述電源供應器調制而進一步減少離子電流會使蝕刻量小於或大約為50奈米、40奈米、30奈米、20奈米、10奈米、5奈米等、或更少。此外，降低工作週期係可因工作週期減少而藉由額外減少離子電流來進一步調整蝕刻量。 在結合時，脈衝式和減少之工作週期係可結合以提供進一步的化學物質調制和離子電流，以允許提高運作彈性。
相較於關於第3圖所述之調制，DC電源供應器係可 使用於數種方式中。當被引導朝向傳導性插件435時，DC電源供應器對離子和電子通量具有較大的衝擊，且可施用一功率級範圍之正與負偏壓，以影響被導至基板的前驅物的化學物質。可替代地，當DC電源供應器460與RF電源供應器455一起耦接於上蓋組件時，DC電源供應器460可用於電漿保持，因此離子電流即可經由RF電源供應器455而被進一步調 制。此外，藉由利用可電氣耦接於電源供應器460之開關465，DC電源465可於不同的運作期間電氣耦接於處理腔室405的不同構件。因此，根據執行的蝕刻類型、使用的前驅物類型等，DC電源供應器460可適當地耦接於腔室405，以產生對該特定運作而言最有效益的電漿輔助。此外，這些參數可於運作期間調整，使得當要移除多個沉積薄膜時，可在運作參數受有蝕刻性能變化助益的處理期間調整電源供應器460的耦接、以及電源供應器455、460兩者的調制。
第5圖說明根據本案技術之具體實施例、具有電漿 產生構件之另一處理系統500的簡化截面示意圖。處理系統500的腔室505可包括與先前關於第2圖所述之類似構件。腔室505可定義一氣體入口510，反應性前驅物物種即從例如一遠端電漿單元(未圖示)輸送通過該氣體入口510。腔室505包括一上蓋組件515、傳導性插件535、柵電極520和接地電極525、以及其他腔室構件。上蓋組件515、傳導性插件535、柵電極520、以及接地電極525可藉由複數個絕緣構件540a-540c中的一或多個而與其他所列出構件電氣隔離。系統500可另外包括電源供應器555、560，以及用於使電源供應器電氣耦接至腔室、或使腔室中的構件電氣耦接之視需要的開關565、570。
如第5圖所示，電源供應器555可電氣耦接於上蓋 組件515。在某些具體實施例中，電源供應器555係一RF電源供應器。當在運作時，電源供應器555對上蓋組件515提供電荷，該上蓋組件515可作用為一熱電極以供電漿產生之 用。柵電極520可耦接於上蓋組件515，使熱電極作用以移至柵電極520高度。因此，電漿產生可偏移低於柵電極520至電漿區域550中的晶圓高度。柵電極520可電氣耦接於上蓋組件，而一例示系統可使用視需要之開關570來電氣耦接構件。RF電源供應器555可配置以可以前述任一參數加以調整。
電源供應器560也在電源供應器555的運作期間被 使用，且在某些具體實施例中係一DC電源供應器。例示的DC電源供應器可配置為可以任何前述參數進行可調整控制。DC電源供應器560可連續運作或以脈衝形式運作，如前述所說明。如第5圖所示，DC電源供應器560可與RF電源供應器555一起電氣耦接於上蓋組件515。電源供應器560可直接耦接於上蓋組件515或RF電源供應器555的電氣耦接，或是利用開關565而電氣耦接至上蓋組件515或RF電源供應器555的電氣耦接，該開關565係可切換以使DC電源供應器560電氣耦接至腔室505的構件。
第5圖中所示之例示系統配置係可用於處理運作。 舉例而言，在已經執行一蝕刻處理之後(例如利用其中一種習知蝕刻配置)，副產物即形成或保留在基板表面上。遠端電漿系統在某些情況中係比在晶圓高度處所產生的電漿效率更低。因此，藉由使用第5圖所示之系統配置，即可在基板高度處形成較有效率的電漿處理。然而，根據副產物的類型和留在表面上的量，仍可利用前述任一運作操作來使用電漿調制。因此，藉由利用先前所述的其中一或多種電源供應器配置，即可調制處理化學物質。藉由使用可切換以耦接處理 腔室505的多個構件之開關570，即可在同一腔室505中進行半導體處理的多個步驟。舉例而言，在執行了關於第4圖所示具體實施例的蝕刻運作之後，開關570可運作而使柵電極520的電氣耦接從接地電極525切換至上蓋組件515。以第5圖所示之晶圓高度電漿來執行一後續處理製程。或者是，一蝕刻運作可以如第3圖所示之具體實施例之說明而進行。在已經完成蝕刻之後，開關565可運作以使DC電源供應器560的耦接從傳導性插件535切換至上蓋組件515或RF電源供應器555電氣耦接，且開關570可運作以使柵電極520的電氣耦接從接地電極525切換至上蓋組件515。利用本文所述的配置和切換能力，許多這類選項即為可行。
第6圖說明根據本案技術之具體實施例、具有電漿 產生構件的另一處理系統600之簡化截面示意圖。處理系統600之腔室605可包括如先前參照第2圖所描述的類似構件。 腔室605可定義一氣體入口610，反應性前驅物物種可從例如一遠端電漿單元(未圖示)輸送通過該氣體入口610。腔室605可包括一上蓋組件615、傳導性插件635、柵電極620和接地電極625，以及其他腔室構件。上蓋組件615、傳導性插件635、柵電極620以及接地電極625中之一或多個可藉由複數個絕緣構件640a-640c中的一或多個而與其他所列構件電氣隔離。系統600可另外包括電源供應器655、660，以及用於使電源供應器電氣耦接至腔室、或使腔室中的構件彼此電氣耦接之視需要的開關665、670。
如第6圖所示，電源供應器655可電氣耦接於上蓋 組件615。在某些具體實施例中，電源供應器655係一RF電源供應器。在運作中時，電源供應器655對上蓋組件615提供電荷，上蓋組件615可作用為用於電漿產生之一熱電極。 相較於第3圖所述之具體實施例，柵電極620並不電氣耦接於接地電極625。因此，電源系統的接地電極可從柵電極620轉換至接地電極625。這樣一來，電漿係可於處理腔室605的一稍微較大區域中發展，包括進入及通過柵電極620。RF電源供應器655可配置為可以先前所述之任一參數加以調整。
電源供應器660在電源供應器655的運作期間也被 使用，且在某些具體實施例中係一DC電源供應器。例示的DC電源供應器可配置為可以前述任一參數進行可調整控制。DC電源供應器660可以連續式或脈衝形式運作，如先前所述，且也如前所述而電氣耦接於處理腔室605的任何構件。 在第6圖所示之例示系統中，DC電源供應器660可電氣耦接於柵電極620。電源供應器660可直接耦接於柵電極620，或是利用開關665而耦接，開關665係可切換以使DC電源供應器660電氣耦接至腔室605的構件。
在運作時，RF電源供應器655和DC電源供應器660 可以如第6圖所述般運作，以經由一額外形式的電漿調制而提供額外的前驅物物種之化學物質調制。自由基前驅物物種可從流體耦接於氣體入口610的一遠端電漿系統(未圖示)而輸送至處理腔室605。RF電源供應器655可以一連續波或呈脈衝式運作，以對上蓋組件615輸送調制功率。當連接所述配置時，電源供應器655可於電漿區域645中產生電漿。 在某些蝕刻或處理運作期間，副產物會留在先前所蝕刻的溝槽特徵結構中。藉由使電漿區域645擴張至柵電極620的高度或下方，即可完成蝕刻結構特徵內的副產物之進一步移除。擴張的電漿區域可使某些電漿物種在基板高度互相作用，並對使用於副產物移除的物種提供方向性。RF電源供應器655可經由脈衝化而調制，或可如前所述進行工作週期調制。
DC電源供應器660可運作以利用前述任何方式來 輔助RF電源供應器655。當DC電源供應器660電氣耦接於柵電極620時，DC電源供應器660可利用所產生電漿而提供額外的離子與電子通量控制。當與柵電極電氣耦接時，即可根據DC電源供應器的偏壓與功率級而經由柵電極620構件調整離子和電子通量，如上文所解釋。替代的具體實施例也使DC電源供應器660電氣耦接於傳導性插件635或上蓋組件615，如前述說明者。
轉參第7圖，第7圖係根據本案技術而說明了一種 在一處理腔室中產生電漿的方法。該腔室可與前述腔室100類似。腔室可包括一或多個電源供應器，例如電源供應器155。在操作步驟710中，一第一電源供應器可耦接於處理腔室上蓋組件。電源供應器也電氣耦接於處理腔室的其他或替代結構。在操作步驟720中，一第二電源供應器可耦接於處理腔室，並像第一電源供應器般耦接於該處理腔室的一類似或不同部分。舉例而言，第二及/第一電源供應器可耦接於一開關，該開關可切換地耦接於該處理腔室的一或多個傳導性 區段。舉例而言，該第二電源供應器係可切換地耦接於該上蓋組件、或該腔室的另一傳導部分，如先前所述者。
電漿是藉由連接第一電源供應器而於處理腔室中引 發或形成。若連接電源供應器時，耦接電源供應器的動作即會在第一電源供應器所電氣耦接之結構和位於腔室內之一接地源之間引發電漿。在操作步驟730中，第二電源供應器可用以以一或多種方式調整電漿輪廓。舉例而言，利用第二電源供應器施加一負電壓，該第二電源供應器可使較大的電子通量流經腔室，例如朝向一柵電極或處理區域。同樣的，利用第二電源供應器施加一正電壓，以增加通過腔室而朝向一電極結構或處理區域的離子通量。第一電源供應器也可以各種模式運作，舉例而言，第一電源供應器可對上蓋組件提供脈衝功率。在所揭露的具體實施例中，該第一電源供應器可包括一RF電源供應器，且該第二電源供應器可包括一DC電源供應器。
在前述說明中，基於解釋目的，係已提出各種細節 以對本案技術的各種具體實施例加以理解。然而，該領域技術人士顯然將知某些具體實施例係可在不含某些此類細節下、或在含有其他細節下實施。
既已揭露了數個具體實施例，該領域技術人士將理 解各種修飾例、替代架構與等效例皆可被使用，其皆不脫離所揭露之具體實施例的精神。此外，並沒有對許多習知處理與元件加以說明，以避免不必要地混淆本案技術。因此，上述說明不應被視為對本案技術範疇的限制。
注意個別的具體實施例係以處理來加以說明，這些 處理係以流程圖、流程圖表或方塊圖加以描述。雖然流程圖中係將方法描述為一種連續的處理，但是其中的許多操作步驟係可並行地或同時地進行。此外，操作步驟的順序是可以重新排列的。處理可在其操作步驟完成時終止，但也可具有圖式中所未說明或包含的其他步驟。此外，任一特定說明的處理中，並非所有操作步驟都在所有的具體實施例中發生。 一處理係對應於一方法、一功能、一程序、一子程序、一子程式等。
當提供一數值範圍時，應理解的是，除非上下文另 行清楚指明，否則也相當於具體揭露了該數值範圍的上限和下限之間的每一個中間值，而至該下限的單位的最小分數。 在一陳述範圍中的任何陳述數值或中間值之間的每一個較小範圍、以及在該陳述範圍中的任何其他陳述數值或中間值也被涵蓋。這些較小範圍的上限和下限係獨立地被包含於該範圍中、或被排除於該範圍外，且每一個範圍(不管這些較小範圍是否包括上限與下限中任一者、或皆不包含、或包含兩者)也都被涵蓋於本發明中，受到該陳述範圍中任何具體排除的限值。當所陳述的範圍包括限值中的一或兩者時，亦包括排除了這些包含限制中一或兩者的範圍。
在本文與如附申請專利範圍中，除非上下文中另行 清楚指明，否則所使用的單數形式「一」與「該」係包括複數形式。因此，舉例而言，當述及「一介電材料」時即包括複數個這類材料，而當述及「該應用」時即包括述及該領域 技術人士所習知的一或多個應用或等效例。
同樣的，在本說明書與下述申請專利範圍中，所使用之用語「包括」、「含有」以及「包含」意欲具體指明所述特徵、整數、構件或步驟的存在，但他們並未排除一或多個其他特徵、整數、構件、步驟、動作或群組的存在或加入。
100‧‧‧處理系統
105‧‧‧處理腔室
110‧‧‧流體供應系統
115‧‧‧上蓋/上蓋組件/熱電極
120‧‧‧柵電極
122‧‧‧孔洞
125‧‧‧接地電極
130‧‧‧絕緣器
135‧‧‧電漿激發區域
140‧‧‧氣體入口
145‧‧‧遠端電漿系統
150‧‧‧氣體供應區域
155‧‧‧RF產生器
160‧‧‧反應區域
165‧‧‧台座

Claims (20)

  1. 一種半導體處理系統，包括：一處理腔室，該處理腔室包括：一上蓋組件，該上蓋組件限定一前驅物入口，前驅物物種係輸送通過該前驅物入口；一接地電極；一柵電極，配置在該上蓋組件和該接地電極之間，並於該腔室內之該柵電極和該上蓋組件之間限定一第一電漿區域以及於該腔室內之該柵電極和該接地電極之間限定一第二電漿區域；一傳導性插件，配置在該第一電漿區域的一週邊處之該上蓋組件和該柵電極之間；一絕緣構件，置放以使該柵電極自該傳導性插件電氣隔離；一第一電源供應器，其電氣耦接於該上蓋組件；及一第二電源供應器，其電氣耦接於該上蓋組件、該柵電極或該傳導性插件中至少其一。
  2. 如請求項1所述之半導體處理系統，進一步包括一第一開關，該第一開關係電氣耦接於該第二電源供應器且可切換以使該第二電源供應器電氣耦接至該上蓋組件、該柵電極或該傳導性插電中其一。
  3. 如請求項1所述之半導體處理系統，進一步包括一第二開關，該第二開關係可切換以電氣耦接該上蓋組件、該接地電極或該柵電極中的至少兩者。
  4. 如請求項3所述之半導體處理系統，其中該第一開關係切換以使該第二電源供應器電氣耦接於該傳導性插件，且其中該第二開關係切換以電氣耦接該柵電極和該接地電極。
  5. 如請求項4所述之半導體處理系統，其中該第二電源供應器係配置以輸送一負電壓至該傳導性插件，且其中該第一電源供應器係配置以於電子通量被引導至該柵電極的該第一電漿區域中引發一電漿。
  6. 如請求項4所述之半導體處理系統，其中該第二電源供應器係配置以輸送一正電壓至該傳導性插件，且其中該第一電源供應器係配置以於離子通量被引導至該柵電極的該第一電漿區域中引發一電漿。
  7. 如請求項3所述之半導體處理系統，其中該第一開關係切換以使該第二電源供應器電氣耦接於該上蓋組件，使得該第一電源供應器和該第二電源供應器兩者皆電氣耦接於該上蓋組件，且其中該第二開關係切換以電氣耦接該柵電極和該接地電極。
  8. 如請求項7所述之半導體處理系統，其中該第二電源供應器係配置以對該上蓋組件提供固定電壓，且該第一電源供應器係配置以對該上蓋組件提供脈衝式頻率功率。
  9. 如請求項3所述之半導體處理系統，其中該第一開關係切換以使該第二電源供應器電氣耦接於該上蓋組件，使得該第一電源供應器和該第二電源供應器兩者皆電氣耦接於該上蓋組件，且其中該第二開關係切換以電氣耦接該柵電極與該上蓋組件。
  10. 如請求項9所述之半導體處理系統，其中該第二電源供應器係配置以對該上蓋組件提供固定電壓，且該第一電源供應器係配置以對該上蓋組件提供脈衝式頻率功率。
  11. 如請求項3所述之半導體處理系統，其中該第一開關係切換以使該第二電源供應器電氣耦接於該柵電極。
  12. 如請求項11所述之半導體處理系統，其中該第二電源供應器係配置以對該柵電極提供固定電壓，且其中該第一電源供應器係配置以對該上蓋組件提供脈衝式頻率功率。
  13. 如請求項1所述之半導體處理系統，其中該第一電源供應器係一RF電源供應器，且該第二電源供應器係一DC電源供應器。
  14. 一種用於在一半導體處理腔室中產生一電漿的方法，該方法包括以下步驟：耦接一第一電源供應器於該處理腔室上蓋組件，以於該處理腔室內形成一電漿；耦接一第二電源供應器於該處理腔室；以該第二電源供應器調整該電漿。
  15. 如請求項14所述之方法，其中所述調整步驟包括以下步驟：以該第二電源供應器施加一負電壓，以增加電子通量。
  16. 如請求項14所述之方法，其中所述調整步驟包括以下步驟：以該第二電源供應器施加一正電壓，以增加離子通量。
  17. 如請求項14所述之方法，其中該第二電源供應器係電氣耦接於一開關，該開關係可切換地耦接於該處理腔室的多數個傳導區段。
  18. 如請求項17所述之方法，其中該第二電源供應器係耦接於該上蓋組件。
  19. 如請求項14所述之方法，其中該第一電源供應器對該上蓋組件提供脈衝功率。
  20. 如請求項14所述之方法，其中該第一電源供應器包括一RF電源供應器，且該第二電源供應器包括一DC電源供應器。
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US10032606B2 (en) 2018-07-24
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US20140057447A1 (en) 2014-02-27
KR20150038564A (ko) 2015-04-08
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