DE68929189D1 - Tafel mit aktiver Matrix - Google Patents
Tafel mit aktiver MatrixInfo
- Publication number
- DE68929189D1 DE68929189D1 DE68929189T DE68929189T DE68929189D1 DE 68929189 D1 DE68929189 D1 DE 68929189D1 DE 68929189 T DE68929189 T DE 68929189T DE 68929189 T DE68929189 T DE 68929189T DE 68929189 D1 DE68929189 D1 DE 68929189D1
- Authority
- DE
- Germany
- Prior art keywords
- blackboard
- active matrix
- matrix
- active
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000011159 matrix material Substances 0.000 title 1
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13454—Drivers integrated on the active matrix substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/001—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes using specific devices not provided for in groups G09G3/02 - G09G3/36, e.g. using an intermediate record carrier such as a film slide; Projection systems; Display of non-alphanumerical information, solely or in combination with alphanumerical information, e.g. digital display on projected diapositive as background
- G09G3/002—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes using specific devices not provided for in groups G09G3/02 - G09G3/36, e.g. using an intermediate record carrier such as a film slide; Projection systems; Display of non-alphanumerical information, solely or in combination with alphanumerical information, e.g. digital display on projected diapositive as background to project the image of a two-dimensional display, such as an array of light emitting or modulating elements or a CRT
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/001—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes using specific devices not provided for in groups G09G3/02 - G09G3/36, e.g. using an intermediate record carrier such as a film slide; Projection systems; Display of non-alphanumerical information, solely or in combination with alphanumerical information, e.g. digital display on projected diapositive as background
- G09G3/003—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes using specific devices not provided for in groups G09G3/02 - G09G3/36, e.g. using an intermediate record carrier such as a film slide; Projection systems; Display of non-alphanumerical information, solely or in combination with alphanumerical information, e.g. digital display on projected diapositive as background to produce spatial visual effects
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3648—Control of matrices with row and column drivers using an active matrix
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3674—Details of drivers for scan electrodes
- G09G3/3677—Details of drivers for scan electrodes suitable for active matrices only
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3685—Details of drivers for data electrodes
- G09G3/3688—Details of drivers for data electrodes suitable for active matrices only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/4825—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body for devices consisting of semiconductor layers on insulating or semi-insulating substrates, e.g. silicon on sapphire devices, i.e. SOS
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133345—Insulating layers
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136254—Checking; Testing
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- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/04—Structural and physical details of display devices
- G09G2300/0404—Matrix technologies
- G09G2300/0408—Integration of the drivers onto the display substrate
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- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
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- G—PHYSICS
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- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/001—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes using specific devices not provided for in groups G09G3/02 - G09G3/36, e.g. using an intermediate record carrier such as a film slide; Projection systems; Display of non-alphanumerical information, solely or in combination with alphanumerical information, e.g. digital display on projected diapositive as background
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- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/2007—Display of intermediate tones
- G09G3/2011—Display of intermediate tones by amplitude modulation
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- G—PHYSICS
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- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3648—Control of matrices with row and column drivers using an active matrix
- G09G3/3659—Control of matrices with row and column drivers using an active matrix the addressing of the pixel involving the control of two or more scan electrodes or two or more data electrodes, e.g. pixel voltage dependant on signal of two data electrodes
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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- H01L2224/8592—Applying permanent coating, e.g. protective coating
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- H—ELECTRICITY
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
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- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
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- Y10S345/00—Computer graphics processing and selective visual display systems
- Y10S345/904—Display with fail/safe testing feature
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Liquid Crystal Display Device Control (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Shift Register Type Memory (AREA)
- Bipolar Transistors (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11991988A JP2653099B2 (ja) | 1988-05-17 | 1988-05-17 | アクティブマトリクスパネル,投写型表示装置及びビューファインダー |
Publications (2)
Publication Number | Publication Date |
---|---|
DE68929189D1 true DE68929189D1 (de) | 2000-05-04 |
DE68929189T2 DE68929189T2 (de) | 2000-12-14 |
Family
ID=14773425
Family Applications (5)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE68928806T Expired - Lifetime DE68928806T2 (de) | 1988-05-17 | 1989-05-16 | Tafel mit aktiver Matrix |
DE68929562T Expired - Lifetime DE68929562D1 (de) | 1988-05-17 | 1989-05-16 | Flüssigkristall-Anzeigevorrichtung |
DE68929091T Expired - Lifetime DE68929091T2 (de) | 1988-05-17 | 1989-05-16 | Tafel mit aktiver Matrix |
DE68920200T Expired - Lifetime DE68920200T2 (de) | 1988-05-17 | 1989-05-16 | Anzeigetafel mit aktiver Matrix. |
DE68929189T Expired - Lifetime DE68929189T2 (de) | 1988-05-17 | 1989-05-16 | Tafel mit aktiver Matrix |
Family Applications Before (4)
Application Number | Title | Priority Date | Filing Date |
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DE68928806T Expired - Lifetime DE68928806T2 (de) | 1988-05-17 | 1989-05-16 | Tafel mit aktiver Matrix |
DE68929562T Expired - Lifetime DE68929562D1 (de) | 1988-05-17 | 1989-05-16 | Flüssigkristall-Anzeigevorrichtung |
DE68929091T Expired - Lifetime DE68929091T2 (de) | 1988-05-17 | 1989-05-16 | Tafel mit aktiver Matrix |
DE68920200T Expired - Lifetime DE68920200T2 (de) | 1988-05-17 | 1989-05-16 | Anzeigetafel mit aktiver Matrix. |
Country Status (7)
Country | Link |
---|---|
US (15) | US5250931A (de) |
EP (8) | EP1227469B1 (de) |
JP (3) | JP2653099B2 (de) |
KR (2) | KR940010107B1 (de) |
DE (5) | DE68928806T2 (de) |
HK (3) | HK101897A (de) |
SG (3) | SG81859A1 (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106652967A (zh) * | 2017-03-21 | 2017-05-10 | 厦门天马微电子有限公司 | 显示面板、显示装置和应用于显示面板的驱动方法 |
Families Citing this family (329)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6149988A (en) * | 1986-09-26 | 2000-11-21 | Semiconductor Energy Laboratory Co., Ltd. | Method and system of laser processing |
US6261856B1 (en) | 1987-09-16 | 2001-07-17 | Semiconductor Energy Laboratory Co., Ltd. | Method and system of laser processing |
JP2653099B2 (ja) * | 1988-05-17 | 1997-09-10 | セイコーエプソン株式会社 | アクティブマトリクスパネル,投写型表示装置及びビューファインダー |
JP2738704B2 (ja) * | 1988-06-20 | 1998-04-08 | 株式会社日立製作所 | 液晶表示装置 |
JP2566175B2 (ja) * | 1990-04-27 | 1996-12-25 | セイコー電子工業株式会社 | 半導体装置及びその製造方法 |
US6067062A (en) * | 1990-09-05 | 2000-05-23 | Seiko Instruments Inc. | Light valve device |
FR2667470B1 (fr) * | 1990-09-28 | 1997-03-14 | Sodern | Dispositif electro-optique a adressage electronique. |
US5849601A (en) | 1990-12-25 | 1998-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method for manufacturing the same |
US7115902B1 (en) | 1990-11-20 | 2006-10-03 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method for manufacturing the same |
JP2791422B2 (ja) * | 1990-12-25 | 1998-08-27 | 株式会社 半導体エネルギー研究所 | 電気光学装置およびその作製方法 |
KR950013784B1 (ko) * | 1990-11-20 | 1995-11-16 | 가부시키가이샤 한도오따이 에네루기 겐큐쇼 | 반도체 전계효과 트랜지스터 및 그 제조방법과 박막트랜지스터 |
US7154147B1 (en) * | 1990-11-26 | 2006-12-26 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and driving method for the same |
KR950001360B1 (ko) * | 1990-11-26 | 1995-02-17 | 가부시키가이샤 한도오따이 에네루기 겐큐쇼 | 전기 광학장치와 그 구동방법 |
US8106867B2 (en) | 1990-11-26 | 2012-01-31 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and driving method for the same |
JP2838318B2 (ja) * | 1990-11-30 | 1998-12-16 | 株式会社半導体エネルギー研究所 | 感光装置及びその作製方法 |
US7576360B2 (en) | 1990-12-25 | 2009-08-18 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device which comprises thin film transistors and method for manufacturing the same |
US7098479B1 (en) | 1990-12-25 | 2006-08-29 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method for manufacturing the same |
JP3210307B2 (ja) * | 1990-12-29 | 2001-09-17 | 株式会社半導体エネルギー研究所 | テレビ受像機 |
US5300788A (en) * | 1991-01-18 | 1994-04-05 | Kopin Corporation | Light emitting diode bars and arrays and method of making same |
EP0499979A3 (en) * | 1991-02-16 | 1993-06-09 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device |
JP3556679B2 (ja) * | 1992-05-29 | 2004-08-18 | 株式会社半導体エネルギー研究所 | 電気光学装置 |
JP2794678B2 (ja) | 1991-08-26 | 1998-09-10 | 株式会社 半導体エネルギー研究所 | 絶縁ゲイト型半導体装置およびその作製方法 |
KR960001611B1 (ko) | 1991-03-06 | 1996-02-02 | 가부시끼가이샤 한도다이 에네르기 겐뀨쇼 | 절연 게이트형 전계 효과 반도체 장치 및 그 제작방법 |
US6713783B1 (en) | 1991-03-15 | 2004-03-30 | Semiconductor Energy Laboratory Co., Ltd. | Compensating electro-optical device including thin film transistors |
JP2873632B2 (ja) * | 1991-03-15 | 1999-03-24 | 株式会社半導体エネルギー研究所 | 半導体装置 |
DE69224540T2 (de) * | 1991-03-19 | 1998-06-25 | Hitachi Ltd | Verfahren zur Projektion eines durch Anwendung von Flüssigkristallanzeigen erhaltenen Bildes und Anzeigevorrichtung zur Durchführung des Verfahrens |
JP2794499B2 (ja) | 1991-03-26 | 1998-09-03 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP2717237B2 (ja) * | 1991-05-16 | 1998-02-18 | 株式会社 半導体エネルギー研究所 | 絶縁ゲイト型半導体装置およびその作製方法 |
US5414442A (en) * | 1991-06-14 | 1995-05-09 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method of driving the same |
US6778231B1 (en) | 1991-06-14 | 2004-08-17 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical display device |
US6975296B1 (en) | 1991-06-14 | 2005-12-13 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method of driving the same |
JP3255942B2 (ja) * | 1991-06-19 | 2002-02-12 | 株式会社半導体エネルギー研究所 | 逆スタガ薄膜トランジスタの作製方法 |
EP0526076B1 (de) * | 1991-07-24 | 1996-09-25 | Fujitsu Limited | Aktive Flüssigkristallanzeigevorrichtung vom Matrixtyp |
JP2845303B2 (ja) | 1991-08-23 | 1999-01-13 | 株式会社 半導体エネルギー研究所 | 半導体装置とその作製方法 |
US6556257B2 (en) * | 1991-09-05 | 2003-04-29 | Sony Corporation | Liquid crystal display device |
US7253440B1 (en) | 1991-10-16 | 2007-08-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having at least first and second thin film transistors |
US7071910B1 (en) | 1991-10-16 | 2006-07-04 | Semiconductor Energy Laboratory Co., Ltd. | Electrooptical device and method of driving and manufacturing the same |
JP2784615B2 (ja) | 1991-10-16 | 1998-08-06 | 株式会社半導体エネルギー研究所 | 電気光学表示装置およびその駆動方法 |
US6759680B1 (en) | 1991-10-16 | 2004-07-06 | Semiconductor Energy Laboratory Co., Ltd. | Display device having thin film transistors |
JP2650543B2 (ja) * | 1991-11-25 | 1997-09-03 | カシオ計算機株式会社 | マトリクス回路駆動装置 |
DE69230138T2 (de) * | 1991-11-29 | 2000-04-27 | Seiko Epson Corp., Tokio/Tokyo | Flüssigkristall-anzeigevorrichtung und verfahren zu ihrer herstellung |
US5485019A (en) * | 1992-02-05 | 1996-01-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
JPH05303116A (ja) * | 1992-02-28 | 1993-11-16 | Canon Inc | 半導体装置 |
JP2651972B2 (ja) * | 1992-03-04 | 1997-09-10 | 株式会社半導体エネルギー研究所 | 液晶電気光学装置 |
JP2758103B2 (ja) * | 1992-04-08 | 1998-05-28 | シャープ株式会社 | アクティブマトリクス基板及びその製造方法 |
US5166960A (en) * | 1992-04-20 | 1992-11-24 | Xerox Corporation | Parallel multi-phased a-Si shift register for fast addressing of an a-Si array |
JP2814161B2 (ja) | 1992-04-28 | 1998-10-22 | 株式会社半導体エネルギー研究所 | アクティブマトリクス表示装置およびその駆動方法 |
US6693681B1 (en) | 1992-04-28 | 2004-02-17 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method of driving the same |
TW214603B (en) * | 1992-05-13 | 1993-10-11 | Seiko Electron Co Ltd | Semiconductor device |
US5638084A (en) * | 1992-05-22 | 1997-06-10 | Dielectric Systems International, Inc. | Lighting-independent color video display |
JPH06124913A (ja) | 1992-06-26 | 1994-05-06 | Semiconductor Energy Lab Co Ltd | レーザー処理方法 |
JP3526058B2 (ja) | 1992-08-19 | 2004-05-10 | セイコーインスツルメンツ株式会社 | 光弁用半導体装置 |
US5633176A (en) * | 1992-08-19 | 1997-05-27 | Seiko Instruments Inc. | Method of producing a semiconductor device for a light valve |
TW232751B (en) | 1992-10-09 | 1994-10-21 | Semiconductor Energy Res Co Ltd | Semiconductor device and method for forming the same |
US6624477B1 (en) | 1992-10-09 | 2003-09-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
JPH0798460A (ja) | 1992-10-21 | 1995-04-11 | Seiko Instr Inc | 半導体装置及び光弁装置 |
US5426447A (en) * | 1992-11-04 | 1995-06-20 | Yuen Foong Yu H.K. Co., Ltd. | Data driving circuit for LCD display |
JP3144166B2 (ja) * | 1992-11-25 | 2001-03-12 | ソニー株式会社 | 低振幅入力レベル変換回路 |
US6323071B1 (en) | 1992-12-04 | 2001-11-27 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming a semiconductor device |
US5403762A (en) * | 1993-06-30 | 1995-04-04 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating a TFT |
JP3437863B2 (ja) * | 1993-01-18 | 2003-08-18 | 株式会社半導体エネルギー研究所 | Mis型半導体装置の作製方法 |
US5491571A (en) * | 1993-01-19 | 1996-02-13 | Hughes Aircraft Company | Liquid crystal display including electrodes and driver devices integrally formed in monocrystalline semiconductor layer |
US5953582A (en) * | 1993-02-10 | 1999-09-14 | Seiko Epson Corporation | Active matrix panel manufacturing method including TFTS having variable impurity concentration levels |
JP3941120B2 (ja) * | 1993-02-10 | 2007-07-04 | セイコーエプソン株式会社 | アクティブマトリクス基板の製造方法、薄膜トランジスタの製造方法及び薄膜トランジスタ |
US5501989A (en) * | 1993-03-22 | 1996-03-26 | Semiconductor Energy Laboratory Co., Ltd. | Method of making semiconductor device/circuit having at least partially crystallized semiconductor layer |
US6771237B1 (en) | 1993-05-24 | 2004-08-03 | Display Science, Inc. | Variable configuration video displays and their manufacture |
TW281786B (de) * | 1993-05-26 | 1996-07-21 | Handotai Energy Kenkyusho Kk | |
US6875628B1 (en) | 1993-05-26 | 2005-04-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and fabrication method of the same |
GB9311129D0 (en) * | 1993-05-28 | 1993-07-14 | Philips Electronics Uk Ltd | Electronic devices with-film circuit elements forming a sampling circuit |
JP3375681B2 (ja) * | 1993-06-04 | 2003-02-10 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP3591872B2 (ja) * | 1993-06-10 | 2004-11-24 | キヤノン株式会社 | 半導体装置 |
GB9314849D0 (en) * | 1993-07-16 | 1993-09-01 | Philips Electronics Uk Ltd | Electronic devices |
US5589406A (en) * | 1993-07-30 | 1996-12-31 | Ag Technology Co., Ltd. | Method of making TFT display |
JPH07111333A (ja) * | 1993-08-20 | 1995-04-25 | Casio Comput Co Ltd | 薄膜トランジスタおよびその製造方法並びにそれを用いた入 力または出力デバイス |
JP2814049B2 (ja) | 1993-08-27 | 1998-10-22 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
JP2000150907A (ja) * | 1993-09-20 | 2000-05-30 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
TW297142B (de) * | 1993-09-20 | 1997-02-01 | Handotai Energy Kenkyusho Kk | |
JPH07135323A (ja) * | 1993-10-20 | 1995-05-23 | Semiconductor Energy Lab Co Ltd | 薄膜状半導体集積回路およびその作製方法 |
US7081938B1 (en) | 1993-12-03 | 2006-07-25 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method for manufacturing the same |
JP3066944B2 (ja) * | 1993-12-27 | 2000-07-17 | キヤノン株式会社 | 光電変換装置、その駆動方法及びそれを有するシステム |
TW255032B (de) * | 1993-12-20 | 1995-08-21 | Sharp Kk | |
JP2759108B2 (ja) * | 1993-12-29 | 1998-05-28 | カシオ計算機株式会社 | 液晶表示装置 |
US5657040A (en) * | 1993-12-29 | 1997-08-12 | Casio Computer Co., Ltd. | Driving apparatus for stably driving high-definition and large screen liquid crystal display panels |
JP2873660B2 (ja) | 1994-01-08 | 1999-03-24 | 株式会社半導体エネルギー研究所 | 半導体集積回路の作製方法 |
JP3108296B2 (ja) | 1994-01-26 | 2000-11-13 | 三洋電機株式会社 | 表示装置の製造方法 |
US5616935A (en) | 1994-02-08 | 1997-04-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor integrated circuit having N-channel and P-channel transistors |
JPH07244337A (ja) | 1994-03-04 | 1995-09-19 | Semiconductor Energy Lab Co Ltd | 情報入出力装置 |
US5555001A (en) * | 1994-03-08 | 1996-09-10 | Prime View Hk Limited | Redundant scheme for LCD display with integrated data driving circuit |
US6700133B1 (en) * | 1994-03-11 | 2004-03-02 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing semiconductor device |
JPH07254693A (ja) * | 1994-03-15 | 1995-10-03 | Semiconductor Energy Lab Co Ltd | 固体撮像装置及びその製造方法 |
JP3672586B2 (ja) * | 1994-03-24 | 2005-07-20 | 株式会社半導体エネルギー研究所 | 補正システムおよびその動作方法 |
US6943764B1 (en) * | 1994-04-22 | 2005-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Driver circuit for an active matrix display device |
JPH07302912A (ja) | 1994-04-29 | 1995-11-14 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
DE19500380C2 (de) * | 1994-05-20 | 2001-05-17 | Mitsubishi Electric Corp | Aktivmatrix-Flüssigkristallanzeige und Herstellungsverfahren dafür |
JP3256084B2 (ja) * | 1994-05-26 | 2002-02-12 | 株式会社半導体エネルギー研究所 | 半導体集積回路およびその作製方法 |
CN1161646C (zh) * | 1994-06-02 | 2004-08-11 | 株式会社半导体能源研究所 | 有源矩阵显示器和电光元件 |
JP3312083B2 (ja) | 1994-06-13 | 2002-08-05 | 株式会社半導体エネルギー研究所 | 表示装置 |
JP3530750B2 (ja) * | 1994-06-13 | 2004-05-24 | 株式会社半導体エネルギー研究所 | アクティブマトリクス装置 |
JP3530749B2 (ja) * | 1994-06-13 | 2004-05-24 | 株式会社半導体エネルギー研究所 | アクティブマトリクス装置 |
JP3067949B2 (ja) * | 1994-06-15 | 2000-07-24 | シャープ株式会社 | 電子装置および液晶表示装置 |
JP3126630B2 (ja) * | 1994-06-20 | 2001-01-22 | キヤノン株式会社 | ディスプレイ |
JP3715996B2 (ja) * | 1994-07-29 | 2005-11-16 | 株式会社日立製作所 | 液晶表示装置 |
TW283230B (de) * | 1994-08-16 | 1996-08-11 | Handotai Energy Kenkyusho Kk | |
CN100550116C (zh) * | 1994-08-16 | 2009-10-14 | 株式会社半导体能源研究所 | 液晶电光器件的外部驱动器电路 |
JPH08101669A (ja) * | 1994-09-30 | 1996-04-16 | Semiconductor Energy Lab Co Ltd | 表示装置駆動回路 |
JPH08106272A (ja) * | 1994-10-03 | 1996-04-23 | Semiconductor Energy Lab Co Ltd | 表示装置駆動回路 |
US6798394B1 (en) | 1994-10-07 | 2004-09-28 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix panel |
DE19540146B4 (de) * | 1994-10-27 | 2012-06-21 | Nec Corp. | Flüssigkristallanzeige vom aktiven Matrixtyp mit Treibern für Multimedia-Anwendungen und Ansteuerverfahren dafür |
JPH08129360A (ja) * | 1994-10-31 | 1996-05-21 | Tdk Corp | エレクトロルミネセンス表示装置 |
KR0151876B1 (ko) * | 1994-11-30 | 1998-10-01 | 엄길용 | 액정표시장치용 박막 트랜지스터 및 그 제조방법 |
JP2900229B2 (ja) | 1994-12-27 | 1999-06-02 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法および電気光学装置 |
US6023260A (en) * | 1995-02-01 | 2000-02-08 | Seiko Epson Corporation | Liquid crystal display device, driving method for liquid crystal display devices, and inspection method for liquid crystal display devices |
JP3364081B2 (ja) | 1995-02-16 | 2003-01-08 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US5757456A (en) | 1995-03-10 | 1998-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method of fabricating involving peeling circuits from one substrate and mounting on other |
JPH08263016A (ja) | 1995-03-17 | 1996-10-11 | Semiconductor Energy Lab Co Ltd | アクティブマトリクス型液晶表示装置 |
US5834327A (en) | 1995-03-18 | 1998-11-10 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing display device |
JP3556315B2 (ja) * | 1995-03-20 | 2004-08-18 | 株式会社東芝 | 表示装置及び半導体素子 |
US6853083B1 (en) * | 1995-03-24 | 2005-02-08 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transfer, organic electroluminescence display device and manufacturing method of the same |
KR100265179B1 (ko) | 1995-03-27 | 2000-09-15 | 야마자끼 순페이 | 반도체장치와 그의 제작방법 |
US7271410B2 (en) * | 1995-03-28 | 2007-09-18 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix circuit |
JPH08264802A (ja) * | 1995-03-28 | 1996-10-11 | Semiconductor Energy Lab Co Ltd | 半導体作製方法、薄膜トランジスタ作製方法および薄膜トランジスタ |
JP3520131B2 (ja) * | 1995-05-15 | 2004-04-19 | 株式会社東芝 | 液晶表示装置 |
JP3315834B2 (ja) | 1995-05-31 | 2002-08-19 | 富士通株式会社 | 薄膜トランジスタマトリクス装置及びその製造方法 |
US6396078B1 (en) * | 1995-06-20 | 2002-05-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with a tapered hole formed using multiple layers with different etching rates |
KR100205388B1 (ko) * | 1995-09-12 | 1999-07-01 | 구자홍 | 액정표시장치 및 그 제조방법 |
JPH0990397A (ja) * | 1995-09-28 | 1997-04-04 | Sharp Corp | アクティブマトリクス基板およびそれを用いた表示装置 |
JPH09101503A (ja) * | 1995-10-04 | 1997-04-15 | Semiconductor Energy Lab Co Ltd | 表示装置 |
US5757351A (en) * | 1995-10-10 | 1998-05-26 | Off World Limited, Corp. | Electrode storage display addressing system and method |
US6900855B1 (en) | 1995-10-12 | 2005-05-31 | Semiconductor Energy Laboratory Co., Ltd. | Display device having resin black matrix over counter substrate |
JPH09105953A (ja) * | 1995-10-12 | 1997-04-22 | Semiconductor Energy Lab Co Ltd | 液晶表示装置 |
JP3647523B2 (ja) * | 1995-10-14 | 2005-05-11 | 株式会社半導体エネルギー研究所 | マトリクス型液晶表示装置 |
JP3216502B2 (ja) * | 1995-10-16 | 2001-10-09 | 株式会社日立製作所 | Cmos薄膜半導体装置及びその製造方法 |
JP3526992B2 (ja) * | 1995-11-06 | 2004-05-17 | 株式会社半導体エネルギー研究所 | マトリクス型表示装置 |
TW329500B (en) | 1995-11-14 | 1998-04-11 | Handotai Energy Kenkyusho Kk | Electro-optical device |
TW439003B (en) * | 1995-11-17 | 2001-06-07 | Semiconductor Energy Lab | Display device |
JPH09146108A (ja) * | 1995-11-17 | 1997-06-06 | Semiconductor Energy Lab Co Ltd | 液晶表示装置およびその駆動方法 |
JP4067588B2 (ja) * | 1995-12-19 | 2008-03-26 | 株式会社半導体エネルギー研究所 | 液晶表示装置の作製方法 |
JPH09171190A (ja) * | 1995-12-19 | 1997-06-30 | Semiconductor Energy Lab Co Ltd | 液晶表示装置 |
JP3963974B2 (ja) * | 1995-12-20 | 2007-08-22 | 株式会社半導体エネルギー研究所 | 液晶電気光学装置 |
JP4179483B2 (ja) * | 1996-02-13 | 2008-11-12 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
JP3647542B2 (ja) * | 1996-02-20 | 2005-05-11 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
US6542143B1 (en) * | 1996-02-28 | 2003-04-01 | Seiko Epson Corporation | Method and apparatus for driving the display device, display system, and data processing device |
JP3402909B2 (ja) * | 1996-03-12 | 2003-05-06 | アルプス電気株式会社 | 薄膜トランジスタ装置及び液晶表示装置 |
US6697037B1 (en) * | 1996-04-29 | 2004-02-24 | International Business Machines Corporation | TFT LCD active data line repair |
CN100405530C (zh) * | 1996-05-15 | 2008-07-23 | 精工爱普生株式会社 | 薄膜器件的制造方法 |
US7053973B1 (en) * | 1996-05-16 | 2006-05-30 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
JPH09311342A (ja) * | 1996-05-16 | 1997-12-02 | Semiconductor Energy Lab Co Ltd | 表示装置 |
US6424016B1 (en) * | 1996-05-24 | 2002-07-23 | Texas Instruments Incorporated | SOI DRAM having P-doped polysilicon gate for a memory pass transistor |
JP3727416B2 (ja) * | 1996-05-31 | 2005-12-14 | 株式会社半導体エネルギー研究所 | 表示装置 |
TW324862B (en) * | 1996-07-03 | 1998-01-11 | Hitachi Ltd | Liquid display apparatus |
KR100234892B1 (ko) * | 1996-08-26 | 1999-12-15 | 구본준 | 액정표시장치의 구조 및 그 제조방법 |
JP4619645B2 (ja) * | 1996-08-27 | 2011-01-26 | セイコーエプソン株式会社 | 薄膜素子の転写方法 |
JP4619644B2 (ja) * | 1996-08-27 | 2011-01-26 | セイコーエプソン株式会社 | 薄膜素子の転写方法 |
US6100879A (en) * | 1996-08-27 | 2000-08-08 | Silicon Image, Inc. | System and method for controlling an active matrix display |
TW317354U (en) * | 1996-09-10 | 1997-10-01 | Ind Tech Res Inst | Thin film transistor liquid crystal driving device |
US20020075422A1 (en) * | 1996-09-19 | 2002-06-20 | Seiko Epson Corporation | Matrix type display device and manufacturing method thereof |
EP1365276B1 (de) * | 1996-09-19 | 2005-12-28 | Seiko Epson Corporation | Verfahren zur Herstellung einer Matrixanzeigevorrichtung |
JPH10104663A (ja) * | 1996-09-27 | 1998-04-24 | Semiconductor Energy Lab Co Ltd | 電気光学装置およびその作製方法 |
US5981974A (en) * | 1996-09-30 | 1999-11-09 | Sharp Kabushiki Kaisha | Semiconductor device and method for fabricating the same |
JP3403027B2 (ja) * | 1996-10-18 | 2003-05-06 | キヤノン株式会社 | 映像水平回路 |
JP3513371B2 (ja) * | 1996-10-18 | 2004-03-31 | キヤノン株式会社 | マトリクス基板と液晶装置とこれらを用いた表示装置 |
US20010043175A1 (en) | 1996-10-22 | 2001-11-22 | Masahiro Yasukawa | Liquid crystal panel substrate, liquid crystal panel, and electronic equipment and projection type display device both using the same |
US7872728B1 (en) * | 1996-10-22 | 2011-01-18 | Seiko Epson Corporation | Liquid crystal panel substrate, liquid crystal panel, and electronic device and projection display device using the same |
US5923308A (en) * | 1996-11-12 | 1999-07-13 | Motorola, Inc. | Array of leds with active pull down shadow canceling circuitry |
JP3788649B2 (ja) * | 1996-11-22 | 2006-06-21 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
JP3899566B2 (ja) * | 1996-11-25 | 2007-03-28 | セイコーエプソン株式会社 | 有機el表示装置の製造方法 |
JPH10228248A (ja) * | 1996-12-09 | 1998-08-25 | Semiconductor Energy Lab Co Ltd | アクティブマトリクス表示装置およびその作製方法 |
JP4086925B2 (ja) * | 1996-12-27 | 2008-05-14 | 株式会社半導体エネルギー研究所 | アクティブマトリクスディスプレイ |
JPH10198292A (ja) * | 1996-12-30 | 1998-07-31 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
TW386238B (en) * | 1997-01-20 | 2000-04-01 | Semiconductor Energy Lab | Semiconductor device and method of manufacturing the same |
US6433764B1 (en) * | 1997-01-23 | 2002-08-13 | Lg. Philips Lcd Co., Ltd. | Liquid crystal display |
JP3856889B2 (ja) * | 1997-02-06 | 2006-12-13 | 株式会社半導体エネルギー研究所 | 反射型表示装置および電子デバイス |
US6462722B1 (en) | 1997-02-17 | 2002-10-08 | Seiko Epson Corporation | Current-driven light-emitting display apparatus and method of producing the same |
EP1830342B1 (de) * | 1997-02-17 | 2013-01-23 | Seiko Epson Corporation | Bildelementsteuerschaltung für eine Lumineszente Anzeigevorrichtung |
US6157360A (en) * | 1997-03-11 | 2000-12-05 | Silicon Image, Inc. | System and method for driving columns of an active matrix display |
JPH10260391A (ja) * | 1997-03-19 | 1998-09-29 | Fujitsu Ltd | 検査回路を有する液晶表示装置 |
US5893721A (en) * | 1997-03-24 | 1999-04-13 | Motorola, Inc. | Method of manufacture of active matrix LED array |
JP3856901B2 (ja) | 1997-04-15 | 2006-12-13 | 株式会社半導体エネルギー研究所 | 表示装置 |
JP2985838B2 (ja) * | 1997-07-18 | 1999-12-06 | 日本電気株式会社 | 薄膜トランジスタアレイ基板の製造方法 |
US6100868A (en) * | 1997-09-15 | 2000-08-08 | Silicon Image, Inc. | High density column drivers for an active matrix display |
JP3943245B2 (ja) * | 1997-09-20 | 2007-07-11 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JPH11101986A (ja) * | 1997-09-26 | 1999-04-13 | Sanyo Electric Co Ltd | 表示装置及び表示装置用大基板 |
US6188453B1 (en) * | 1997-09-30 | 2001-02-13 | Sanyo Electric Co., Ltd. | Display apparatus having test elements under or bounded by the sealant |
KR100467515B1 (ko) * | 1997-10-07 | 2005-05-19 | 삼성전자주식회사 | 박막트랜지스터기판시험용패턴발생장치 |
JP3445121B2 (ja) * | 1997-10-24 | 2003-09-08 | キヤノン株式会社 | マトリクス基板と液晶表示装置及びこれを用いるプロジェクター |
JP3794802B2 (ja) | 1997-10-28 | 2006-07-12 | 株式会社半導体エネルギー研究所 | 表示パネル駆動回路および表示パネル |
US7202497B2 (en) * | 1997-11-27 | 2007-04-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP4014710B2 (ja) * | 1997-11-28 | 2007-11-28 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
US6617648B1 (en) * | 1998-02-25 | 2003-09-09 | Semiconductor Energy Laboratory Co., Ltd. | Projection TV |
TW482912B (en) * | 1998-03-02 | 2002-04-11 | Advanced Display Kk | Liquid crystal display device, integrated circuit therefor, method for driving a liquid crystal display device, and apparatus therefor |
WO1999046211A1 (fr) * | 1998-03-11 | 1999-09-16 | Hitachi, Ltd. | Substrat en verre a cristaux liquides, procede de decoupe de ce substrat, coupeuse destinee a ce substrat et ecran utilisant ce substrat |
TW457389B (en) * | 1998-03-23 | 2001-10-01 | Toshiba Corp | Liquid crystal display element |
JPH11338439A (ja) * | 1998-03-27 | 1999-12-10 | Semiconductor Energy Lab Co Ltd | 半導体表示装置の駆動回路および半導体表示装置 |
JP3980167B2 (ja) * | 1998-04-07 | 2007-09-26 | 株式会社日立製作所 | Tft電極基板 |
JPH11305743A (ja) | 1998-04-23 | 1999-11-05 | Semiconductor Energy Lab Co Ltd | 液晶表示装置 |
JP4156075B2 (ja) * | 1998-04-23 | 2008-09-24 | 株式会社半導体エネルギー研究所 | 画像表示装置 |
JP3042493B2 (ja) * | 1998-05-13 | 2000-05-15 | 日本電気株式会社 | 液晶表示装置およびその駆動方法 |
JP2000039628A (ja) | 1998-05-16 | 2000-02-08 | Semiconductor Energy Lab Co Ltd | 半導体表示装置 |
JP4053136B2 (ja) * | 1998-06-17 | 2008-02-27 | 株式会社半導体エネルギー研究所 | 反射型半導体表示装置 |
US6140162A (en) * | 1998-06-19 | 2000-10-31 | Lg Electronics Inc. | Reduction of masking and doping steps in a method of fabricating a liquid crystal display |
JP3883706B2 (ja) * | 1998-07-31 | 2007-02-21 | シャープ株式会社 | エッチング方法、及び薄膜トランジスタマトリックス基板の製造方法 |
TW437095B (en) * | 1998-10-16 | 2001-05-28 | Seiko Epson Corp | Substrate for photoelectric device, active matrix substrate and the inspection method of substrate for photoelectric device |
JP3631384B2 (ja) * | 1998-11-17 | 2005-03-23 | 富士通ディスプレイテクノロジーズ株式会社 | 液晶表示装置及び液晶表示装置の基板製造方法 |
US7235810B1 (en) | 1998-12-03 | 2007-06-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating the same |
KR100358644B1 (ko) * | 1999-01-05 | 2002-10-30 | 삼성전자 주식회사 | 듀얼 시프트 클록 배선을 가지는 액정 표시 장치 |
EP1020920B1 (de) * | 1999-01-11 | 2010-06-02 | Sel Semiconductor Energy Laboratory Co., Ltd. | Halbleiteranordnung mit Treiber-TFT und Pixel-TFT auf einem Substrat |
US6593592B1 (en) * | 1999-01-29 | 2003-07-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having thin film transistors |
JP2000221903A (ja) * | 1999-01-29 | 2000-08-11 | Sanyo Electric Co Ltd | エレクトロルミネッセンス表示装置 |
JP2000267136A (ja) | 1999-03-18 | 2000-09-29 | Toshiba Corp | 液晶表示装置 |
US6346730B1 (en) * | 1999-04-06 | 2002-02-12 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device having a pixel TFT formed in a display region and a drive circuit formed in the periphery of the display region on the same substrate |
US7122835B1 (en) * | 1999-04-07 | 2006-10-17 | Semiconductor Energy Laboratory Co., Ltd. | Electrooptical device and a method of manufacturing the same |
JP3437489B2 (ja) * | 1999-05-14 | 2003-08-18 | シャープ株式会社 | 信号線駆動回路および画像表示装置 |
US6221543B1 (en) | 1999-05-14 | 2001-04-24 | 3M Innovatives Properties | Process for making active substrates for color displays |
US6370502B1 (en) * | 1999-05-27 | 2002-04-09 | America Online, Inc. | Method and system for reduction of quantization-induced block-discontinuities and general purpose audio codec |
US8853696B1 (en) | 1999-06-04 | 2014-10-07 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and electronic device |
US7245018B1 (en) * | 1999-06-22 | 2007-07-17 | Semiconductor Energy Laboratory Co., Ltd. | Wiring material, semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof |
TW515109B (en) * | 1999-06-28 | 2002-12-21 | Semiconductor Energy Lab | EL display device and electronic device |
JP2001053283A (ja) | 1999-08-12 | 2001-02-23 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
KR20010080327A (ko) * | 1999-09-08 | 2001-08-22 | 모리시타 요이찌 | 표시장치 및 그 제조방법 |
TW468283B (en) * | 1999-10-12 | 2001-12-11 | Semiconductor Energy Lab | EL display device and a method of manufacturing the same |
KR100666317B1 (ko) * | 1999-12-15 | 2007-01-09 | 삼성전자주식회사 | 구동 신호 인가시점 결정모듈, 이를 포함한 액정표시패널어셈블리 및 액정표시패널 어셈블리의 구동 방법 |
JP2001174811A (ja) * | 1999-12-16 | 2001-06-29 | Fuji Photo Optical Co Ltd | 照明光学系およびこれを用いた投射型画像表示装置 |
US20020113268A1 (en) * | 2000-02-01 | 2002-08-22 | Jun Koyama | Nonvolatile memory, semiconductor device and method of manufacturing the same |
EP1176581B1 (de) * | 2000-02-02 | 2007-11-14 | Seiko Epson Corporation | Anzeigesteuergerät und anzeigevorrichtung zu dessen verwendung |
US20010045943A1 (en) * | 2000-02-18 | 2001-11-29 | Prache Olivier F. | Display method and system |
US7023021B2 (en) | 2000-02-22 | 2006-04-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
JP4118484B2 (ja) | 2000-03-06 | 2008-07-16 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP2001257350A (ja) | 2000-03-08 | 2001-09-21 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
JP4118485B2 (ja) | 2000-03-13 | 2008-07-16 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP4700160B2 (ja) | 2000-03-13 | 2011-06-15 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP4683688B2 (ja) | 2000-03-16 | 2011-05-18 | 株式会社半導体エネルギー研究所 | 液晶表示装置の作製方法 |
JP4393662B2 (ja) | 2000-03-17 | 2010-01-06 | 株式会社半導体エネルギー研究所 | 液晶表示装置の作製方法 |
US7194085B2 (en) * | 2000-03-22 | 2007-03-20 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device |
US6789910B2 (en) | 2000-04-12 | 2004-09-14 | Semiconductor Energy Laboratory, Co., Ltd. | Illumination apparatus |
US7525165B2 (en) * | 2000-04-17 | 2009-04-28 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and manufacturing method thereof |
JP4785229B2 (ja) | 2000-05-09 | 2011-10-05 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP2002040486A (ja) * | 2000-05-19 | 2002-02-06 | Seiko Epson Corp | 電気光学装置、その製造方法および電子機器 |
US6559667B1 (en) * | 2000-06-28 | 2003-05-06 | Advanced Micro Devices, Inc. | Programming thermal test chip arrays |
US6692646B2 (en) | 2000-08-29 | 2004-02-17 | Display Science, Inc. | Method of manufacturing a light modulating capacitor array and product |
GB2366439A (en) * | 2000-09-05 | 2002-03-06 | Sharp Kk | Driving arrangements for active matrix LCDs |
US20020034930A1 (en) * | 2000-09-11 | 2002-03-21 | Shunpei Yamazaki | Electronic device and method of usage thereof |
US6562671B2 (en) * | 2000-09-22 | 2003-05-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor display device and manufacturing method thereof |
TWI277057B (en) * | 2000-10-23 | 2007-03-21 | Semiconductor Energy Lab | Display device |
US6927753B2 (en) | 2000-11-07 | 2005-08-09 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
GB0030592D0 (en) | 2000-12-15 | 2001-01-31 | Koninkl Philips Electronics Nv | Active matrix device with reduced power consumption |
JP4443063B2 (ja) * | 2001-02-28 | 2010-03-31 | 株式会社日立製作所 | 電界効果トランジスタ及びそれを使用した画像表示装置 |
TW525274B (en) * | 2001-03-05 | 2003-03-21 | Samsung Electronics Co Ltd | Ultra thin semiconductor package having different thickness of die pad and leads, and method for manufacturing the same |
US7071037B2 (en) | 2001-03-06 | 2006-07-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
JP2002297109A (ja) * | 2001-03-30 | 2002-10-11 | Fujitsu Ltd | 液晶表示装置及びその駆動回路 |
JP2002311921A (ja) * | 2001-04-19 | 2002-10-25 | Hitachi Ltd | 表示装置およびその駆動方法 |
JP2003108021A (ja) * | 2001-09-28 | 2003-04-11 | Hitachi Ltd | 表示装置 |
JP3736513B2 (ja) * | 2001-10-04 | 2006-01-18 | セイコーエプソン株式会社 | 電気光学装置及びその製造方法並びに電子機器 |
TW543145B (en) * | 2001-10-11 | 2003-07-21 | Samsung Electronics Co Ltd | A thin film transistor array panel and a method of the same |
KR100816336B1 (ko) * | 2001-10-11 | 2008-03-24 | 삼성전자주식회사 | 박막 트랜지스터 기판 및 그 제조 방법 |
US7180479B2 (en) * | 2001-10-30 | 2007-02-20 | Semiconductor Energy Laboratory Co., Ltd. | Signal line drive circuit and light emitting device and driving method therefor |
US6840666B2 (en) * | 2002-01-23 | 2005-01-11 | Marena Systems Corporation | Methods and systems employing infrared thermography for defect detection and analysis |
JP3723507B2 (ja) | 2002-01-29 | 2005-12-07 | 三洋電機株式会社 | 駆動回路 |
US6693384B1 (en) * | 2002-02-01 | 2004-02-17 | Alien Technology Corporation | Interconnect structure for electronic devices |
JP3880416B2 (ja) * | 2002-02-13 | 2007-02-14 | シャープ株式会社 | アクティブマトリクス基板 |
JP2003308030A (ja) | 2002-02-18 | 2003-10-31 | Sanyo Electric Co Ltd | 表示装置 |
KR100997699B1 (ko) * | 2002-03-05 | 2010-12-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 트랜지스터 |
US20030173306A1 (en) * | 2002-03-14 | 2003-09-18 | Cha Daniel K. | Process and system for treating waste from the production of energetics |
US6894231B2 (en) * | 2002-03-19 | 2005-05-17 | Broadcom Corporation | Bus twisting scheme for distributed coupling and low power |
EP1489141A4 (de) * | 2002-03-26 | 2010-10-13 | Dainippon Printing Co Ltd | Organisches halbleitermaterial, organische halbleiterstruktur und organische halbleitervorrichtung |
JP4104489B2 (ja) * | 2002-05-17 | 2008-06-18 | 東芝松下ディスプレイテクノロジー株式会社 | 表示装置及びその製造方法 |
DE10227332A1 (de) * | 2002-06-19 | 2004-01-15 | Akt Electron Beam Technology Gmbh | Ansteuervorrichtung mit verbesserten Testeneigenschaften |
US7176483B2 (en) * | 2002-08-12 | 2007-02-13 | Acorn Technologies, Inc. | Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions |
JP2004094058A (ja) | 2002-09-02 | 2004-03-25 | Semiconductor Energy Lab Co Ltd | 液晶表示装置および液晶表示装置の駆動方法 |
US7193593B2 (en) | 2002-09-02 | 2007-03-20 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and method of driving a liquid crystal display device |
TWI292507B (en) * | 2002-10-09 | 2008-01-11 | Toppoly Optoelectronics Corp | Switching signal generator |
TWI304964B (en) * | 2002-10-22 | 2009-01-01 | Toppoly Optoelectronics Corp | Panel of flat panel display having embedded test circuit |
US7920220B2 (en) * | 2002-12-09 | 2011-04-05 | Samsung Electronics Co., Ltd. | Display pixel, display apparatus having an image pixel and method of manufacturing display device |
JP4139719B2 (ja) * | 2003-03-31 | 2008-08-27 | シャープ株式会社 | 液晶表示装置 |
US7250720B2 (en) | 2003-04-25 | 2007-07-31 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
JP2004341144A (ja) * | 2003-05-15 | 2004-12-02 | Hitachi Ltd | 画像表示装置 |
KR100964620B1 (ko) * | 2003-07-14 | 2010-06-22 | 삼성전자주식회사 | 하부기판용 모기판, 표시패널용 기판 및 표시패널의제조방법 |
KR100951357B1 (ko) * | 2003-08-19 | 2010-04-08 | 삼성전자주식회사 | 액정 표시 장치 |
US20050140634A1 (en) * | 2003-12-26 | 2005-06-30 | Nec Corporation | Liquid crystal display device, and method and circuit for driving liquid crystal display device |
JP4412143B2 (ja) * | 2004-01-14 | 2010-02-10 | セイコーエプソン株式会社 | 検査用治具の製造方法 |
US7319335B2 (en) | 2004-02-12 | 2008-01-15 | Applied Materials, Inc. | Configurable prober for TFT LCD array testing |
US6833717B1 (en) | 2004-02-12 | 2004-12-21 | Applied Materials, Inc. | Electron beam test system with integrated substrate transfer module |
US7834948B2 (en) * | 2004-06-11 | 2010-11-16 | Sharp Kabushiki Kaisha | Active matrix substrate and liquid crystal display device |
US8013816B2 (en) * | 2004-06-30 | 2011-09-06 | Samsung Mobile Display Co., Ltd. | Light emitting display |
US7820936B2 (en) * | 2004-07-02 | 2010-10-26 | Boston Scientific Scimed, Inc. | Method and apparatus for controlling and adjusting the intensity profile of a laser beam employed in a laser welder for welding polymeric and metallic components |
JP4102788B2 (ja) * | 2004-08-16 | 2008-06-18 | シャープ株式会社 | 液晶表示装置の製造方法 |
US8836621B2 (en) | 2004-12-15 | 2014-09-16 | Nlt Technologies, Ltd. | Liquid crystal display apparatus, driving method for same, and driving circuit for same |
US7518196B2 (en) | 2005-02-23 | 2009-04-14 | Intel Corporation | Field effect transistor with narrow bandgap source and drain regions and method of fabrication |
JP2006276287A (ja) * | 2005-03-28 | 2006-10-12 | Nec Corp | 表示装置 |
US7535238B2 (en) | 2005-04-29 | 2009-05-19 | Applied Materials, Inc. | In-line electron beam test system |
CN100464238C (zh) * | 2005-07-01 | 2009-02-25 | 中华映管股份有限公司 | 有源元件阵列以及有源元件阵列的检测方法 |
US7586158B2 (en) * | 2005-07-07 | 2009-09-08 | Infineon Technologies Ag | Piezoelectric stress liner for bulk and SOI |
JP5017923B2 (ja) * | 2005-08-05 | 2012-09-05 | セイコーエプソン株式会社 | 電気光学装置、及びこれを備えた電子機器 |
US7479655B2 (en) * | 2006-01-31 | 2009-01-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP2007225760A (ja) * | 2006-02-22 | 2007-09-06 | Seiko Epson Corp | 電気光学装置、及びこれを備えた電子機器 |
US7786742B2 (en) | 2006-05-31 | 2010-08-31 | Applied Materials, Inc. | Prober for electronic device testing on large area substrates |
JP4241850B2 (ja) | 2006-07-03 | 2009-03-18 | エプソンイメージングデバイス株式会社 | 液晶装置、液晶装置の駆動方法、および電子機器 |
JP4512570B2 (ja) * | 2006-08-11 | 2010-07-28 | シャープ株式会社 | 液晶表示装置およびその製造方法 |
KR101076446B1 (ko) * | 2007-04-13 | 2011-10-25 | 엘지디스플레이 주식회사 | 박막 트랜지스터 기판 및 그를 구비하는 평판 표시장치 |
EP1995374A2 (de) | 2007-05-09 | 2008-11-26 | Denimart S.A.de C.V. | Mittels kationischer Farbstoffe gefärbte Textilprodukte und Verfahren zu ihrer Herstellung |
KR100968720B1 (ko) * | 2007-06-29 | 2010-07-08 | 소니 주식회사 | 액정 장치, 및 전자기기 |
JP5119810B2 (ja) * | 2007-08-30 | 2013-01-16 | ソニー株式会社 | 表示装置 |
TWI377551B (en) * | 2007-09-26 | 2012-11-21 | Chunghwa Picture Tubes Ltd | Flat panel display |
CN101452123B (zh) * | 2007-12-07 | 2010-09-22 | 北京京东方光电科技有限公司 | 基板测试电路 |
US20090318994A1 (en) * | 2008-06-19 | 2009-12-24 | Tracee Eidenschink | Transvascular balloon catheter with pacing electrodes on shaft |
KR101303736B1 (ko) * | 2008-07-07 | 2013-09-04 | 엘지디스플레이 주식회사 | 액정표시장치용 게이트드라이버 |
JP5518381B2 (ja) | 2008-07-10 | 2014-06-11 | 株式会社半導体エネルギー研究所 | カラーセンサ及び当該カラーセンサを具備する電子機器 |
JP2010039229A (ja) * | 2008-08-06 | 2010-02-18 | Hitachi Displays Ltd | 表示装置 |
JP5484109B2 (ja) * | 2009-02-09 | 2014-05-07 | 三菱電機株式会社 | 電気光学装置 |
US20100201647A1 (en) * | 2009-02-11 | 2010-08-12 | Tpo Displays Corp. | Capacitive touch sensor |
CN101825782B (zh) * | 2009-03-06 | 2012-02-29 | 北京京东方光电科技有限公司 | 基板测试电路及基板 |
US20110037054A1 (en) * | 2009-08-17 | 2011-02-17 | Chan-Long Shieh | Amoled with cascaded oled structures |
CN102484471B (zh) | 2009-10-30 | 2015-04-01 | 株式会社半导体能源研究所 | 驱动器电路、包括该驱动器电路的显示设备和包括该显示设备的电子设备 |
WO2011086837A1 (en) | 2010-01-15 | 2011-07-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
JP5106601B2 (ja) * | 2010-08-26 | 2012-12-26 | キヤノン株式会社 | 液体吐出ヘッド用基板の製造方法、液体吐出ヘッドの製造方法、及び液体吐出ヘッド用基板の検査方法 |
JP2012256012A (ja) | 2010-09-15 | 2012-12-27 | Semiconductor Energy Lab Co Ltd | 表示装置 |
JP5933897B2 (ja) | 2011-03-18 | 2016-06-15 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US8994763B2 (en) | 2011-03-25 | 2015-03-31 | Semiconductor Energy Laboratory Co., Ltd. | Display device and driving method of the same |
US20120306391A1 (en) * | 2011-06-03 | 2012-12-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Modulized Full Operation Junction Ultra High Voltage (UHV) Device |
SG10201605237SA (en) * | 2011-06-24 | 2016-08-30 | Sharp Kk | Display device and method for manufacturing same |
TWI569446B (zh) * | 2011-12-23 | 2017-02-01 | 半導體能源研究所股份有限公司 | 半導體元件、半導體元件的製造方法、及包含半導體元件的半導體裝置 |
CN108700786B (zh) | 2016-02-10 | 2021-01-08 | 夏普株式会社 | 有源矩阵基板及显示面板 |
CN107861302B (zh) * | 2017-10-25 | 2020-06-23 | 上海中航光电子有限公司 | 一种阵列基板、其制作方法、显示面板及显示装置 |
CN111466027B (zh) * | 2017-12-08 | 2023-06-16 | 国立大学法人静冈大学 | 光电转换元件和固态摄像装置 |
CN108427230A (zh) * | 2018-05-24 | 2018-08-21 | 京东方科技集团股份有限公司 | 显示基板、显示面板和显示装置 |
TWI717972B (zh) * | 2020-01-14 | 2021-02-01 | 友達光電股份有限公司 | 主動陣列基板及其製造方法 |
FR3120947B1 (fr) * | 2021-03-16 | 2023-05-12 | Commissariat Energie Atomique | Caractérisation électrique de circuit d’adressage matriciel |
KR20220129694A (ko) * | 2021-03-16 | 2022-09-26 | 삼성디스플레이 주식회사 | 표시 장치 및 이를 포함하는 타일형 표시 장치 |
CN113299201A (zh) * | 2021-06-24 | 2021-08-24 | 京东方科技集团股份有限公司 | 一种显示基板和显示装置 |
CN113539203B (zh) * | 2021-06-29 | 2022-08-23 | 北海惠科光电技术有限公司 | 一种显示面板的驱动装置、显示装置 |
Family Cites Families (98)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3292575A (en) * | 1966-12-20 | Sheet rock tape dispenser device | ||
US3964941A (en) * | 1971-06-21 | 1976-06-22 | Motorola, Inc. | Method of making isolated complementary monolithic insulated gate field effect transistors |
US3824003A (en) * | 1973-05-07 | 1974-07-16 | Hughes Aircraft Co | Liquid crystal display panel |
JPS5749912B2 (de) * | 1973-10-29 | 1982-10-25 | ||
CA1040321A (en) * | 1974-07-23 | 1978-10-10 | Alfred C. Ipri | Polycrystalline silicon resistive device for integrated circuits and method for making same |
US4002501A (en) * | 1975-06-16 | 1977-01-11 | Rockwell International Corporation | High speed, high yield CMOS/SOS process |
SE7800261L (sv) * | 1977-02-28 | 1978-08-29 | Rca Corp | Sett att tillverka en halvledaranordning |
US4104087A (en) * | 1977-04-07 | 1978-08-01 | The United States Of America As Represented By The Secretary Of The Air Force | Method for fabricating MNOS memory circuits |
US4277883A (en) * | 1977-12-27 | 1981-07-14 | Raytheon Company | Integrated circuit manufacturing method |
US4199773A (en) * | 1978-08-29 | 1980-04-22 | Rca Corporation | Insulated gate field effect silicon-on-sapphire transistor and method of making same |
US4346378A (en) * | 1979-05-03 | 1982-08-24 | National Research Development Corporation | Double trace electro optic display |
JPS55159493A (en) * | 1979-05-30 | 1980-12-11 | Suwa Seikosha Kk | Liquid crystal face iimage display unit |
JPS564183A (en) | 1979-06-21 | 1981-01-17 | Casio Computer Co Ltd | Display system |
DE3028718C2 (de) * | 1979-07-31 | 1982-08-19 | Sharp K.K., Osaka | Dünnfilmtransistor in Verbindung mit einer Anzeigevorrichtung |
JPS5638033A (en) * | 1979-09-06 | 1981-04-13 | Canon Inc | In-finder display device for camera using liquid crystal |
JPS5692573A (en) * | 1979-12-26 | 1981-07-27 | Citizen Watch Co Ltd | Display panel |
US4312680A (en) * | 1980-03-31 | 1982-01-26 | Rca Corporation | Method of manufacturing submicron channel transistors |
US4508871A (en) * | 1981-04-20 | 1985-04-02 | The Dow Chemical Company | Transparent blends of polymethylmethacrylate and certain styrene copolymers |
US4883986A (en) * | 1981-05-19 | 1989-11-28 | Tokyo Shibaura Denki Kabushiki Kaisha | High density semiconductor circuit using CMOS transistors |
JPS584180A (ja) | 1981-06-30 | 1983-01-11 | セイコーエプソン株式会社 | アクテイブマトリクス基板 |
JPS58115850A (ja) * | 1981-12-28 | 1983-07-09 | Seiko Epson Corp | アクテイブマトリツクスパネル |
JPS58137892A (ja) * | 1982-02-10 | 1983-08-16 | 株式会社東芝 | ディスプレイ装置 |
US4399605A (en) * | 1982-02-26 | 1983-08-23 | International Business Machines Corporation | Method of making dense complementary transistors |
FR2524714B1 (fr) * | 1982-04-01 | 1986-05-02 | Suwa Seikosha Kk | Transistor a couche mince |
JPS58186796A (ja) * | 1982-04-26 | 1983-10-31 | 社団法人日本電子工業振興協会 | 液晶表示装置およびその駆動方法 |
JPS5910988A (ja) * | 1982-07-12 | 1984-01-20 | ホシデン株式会社 | カラ−液晶表示器 |
US4770498A (en) * | 1982-07-12 | 1988-09-13 | Hosiden Electronics Co., Ltd. | Dot-matrix liquid crystal display |
FR2594580B1 (fr) * | 1982-07-12 | 1988-11-04 | Hosiden Electronics Co | Procede de fabrication d'afficheur a cristaux liquides en matrice de points et afficheur ainsi fabrique |
JPS5978557A (ja) * | 1982-10-27 | 1984-05-07 | Toshiba Corp | 相補型mos半導体装置の製造方法 |
JPH0723905B2 (ja) * | 1982-11-02 | 1995-03-15 | セイコーエプソン株式会社 | アクティブマトリクス基板の欠陥箇所検出回路 |
US4514749A (en) * | 1983-01-18 | 1985-04-30 | At&T Bell Laboratories | VLSI Chip with ground shielding |
JPS59150478A (ja) * | 1983-02-16 | 1984-08-28 | Matsushita Electronics Corp | 薄膜回路装置 |
JPS5944603B2 (ja) * | 1983-02-25 | 1984-10-31 | セイコーエプソン株式会社 | 表示パネル |
JPS58184121A (ja) * | 1983-02-25 | 1983-10-27 | Seiko Epson Corp | 表示パネル |
US4636038A (en) * | 1983-07-09 | 1987-01-13 | Canon Kabushiki Kaisha | Electric circuit member and liquid crystal display device using said member |
JPH0697694B2 (ja) * | 1983-08-25 | 1994-11-30 | セイコーエプソン株式会社 | 相補型薄膜トランジスタ |
JPS60101951A (ja) * | 1983-11-08 | 1985-06-06 | Sanyo Electric Co Ltd | ゲ−トアレイ |
DE3340560A1 (de) * | 1983-11-09 | 1985-05-15 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum gleichzeitigen herstellen von schnellen kurzkanal- und spannungsfesten mos-transistoren in vlsi-schaltungen |
US4573766A (en) * | 1983-12-19 | 1986-03-04 | Cordis Corporation | LED Staggered back lighting panel for LCD module |
JPH0727975B2 (ja) * | 1984-01-25 | 1995-03-29 | セイコーエプソン株式会社 | 相補型薄膜トランジスタの製造方法 |
JPS60179723A (ja) * | 1984-02-27 | 1985-09-13 | Sharp Corp | 液晶プロジエクシヨン装置 |
ATE41265T1 (de) * | 1984-03-21 | 1989-03-15 | Siemens Ag | Verfahren zum herstellen einer hochintegrierten mos-feld-effekttransistorschaltung. |
JPS60213062A (ja) * | 1984-04-09 | 1985-10-25 | Hosiden Electronics Co Ltd | 薄膜トランジスタの製造方法 |
JPS60222821A (ja) * | 1984-04-20 | 1985-11-07 | Canon Inc | カラ−液晶表示セル |
US4677735A (en) * | 1984-05-24 | 1987-07-07 | Texas Instruments Incorporated | Method of providing buried contacts for N and P channel devices in an SOI-CMOS process using a single N+polycrystalline silicon layer |
US4697332A (en) * | 1984-05-25 | 1987-10-06 | Gould Inc. | Method of making tri-well CMOS by self-aligned process |
JPS6132093A (ja) * | 1984-07-23 | 1986-02-14 | シャープ株式会社 | 液晶表示装置の駆動回路 |
JPS61116334A (ja) * | 1984-11-09 | 1986-06-03 | Seiko Epson Corp | アクテイブマトリクスパネル |
JPS61117599A (ja) * | 1984-11-13 | 1986-06-04 | キヤノン株式会社 | 映像表示装置のスイツチングパルス |
JPS61121081A (ja) * | 1984-11-19 | 1986-06-09 | キヤノン株式会社 | 液晶表示パネル |
JPH0646278B2 (ja) | 1984-11-22 | 1994-06-15 | セイコーエプソン株式会社 | 液晶表示装置 |
JPS61140296A (ja) * | 1984-12-13 | 1986-06-27 | Seiko Epson Corp | 電子ビユ−フアインダ− |
JPS61207073A (ja) * | 1985-03-12 | 1986-09-13 | Seiko Epson Corp | アクテイブマトリクス基板の製造方法 |
KR940002723B1 (ko) * | 1985-03-18 | 1994-03-31 | 가부시기가이샤 히다찌세이사꾸쇼 | 반도체소자의 테스트방법 |
JPS61220199A (ja) | 1985-03-26 | 1986-09-30 | Toshiba Corp | スタテイク型シフトレジスタおよびその制御方法 |
JPS61235818A (ja) * | 1985-04-12 | 1986-10-21 | Hitachi Ltd | カラ−デイスプレイ用アクテイブマトリクス |
JPS61236593A (ja) * | 1985-04-12 | 1986-10-21 | 松下電器産業株式会社 | 表示装置および表示方法 |
US4671642A (en) * | 1985-04-24 | 1987-06-09 | Canon Kabushiki Kaisha | Image forming apparatus |
JPH07104661B2 (ja) | 1985-09-19 | 1995-11-13 | セイコーエプソン株式会社 | 薄膜走査回路 |
JPS6273659A (ja) | 1985-09-26 | 1987-04-04 | Seiko Instr & Electronics Ltd | 薄膜トランジスタ装置の製造方法 |
US4789889A (en) * | 1985-11-20 | 1988-12-06 | Ge Solid State Patents, Inc. | Integrated circuit device having slanted peripheral circuits |
JPS62145289A (ja) * | 1985-12-19 | 1987-06-29 | セイコーエプソン株式会社 | ドライバ−内蔵アクテイブマトリクスパネル |
JPS62171384A (ja) * | 1986-01-24 | 1987-07-28 | Matsushita Electric Ind Co Ltd | 電子ビユ−フアインダ装置 |
JPS62213261A (ja) * | 1986-03-14 | 1987-09-19 | Canon Inc | 長尺素子アレイ部材 |
JPH0816752B2 (ja) * | 1986-03-24 | 1996-02-21 | セイコーエプソン株式会社 | 投射型表示装置 |
JPS62229873A (ja) * | 1986-03-29 | 1987-10-08 | Hitachi Ltd | 薄膜半導体装置の製造方法 |
DE3714164A1 (de) * | 1986-04-30 | 1987-11-05 | Sharp Kk | Fluessigkristallanzeige |
US4980860A (en) * | 1986-06-27 | 1990-12-25 | Texas Instruments Incorporated | Cross-coupled complementary bit lines for a semiconductor memory with pull-up circuitry |
JPS6341048A (ja) * | 1986-08-06 | 1988-02-22 | Mitsubishi Electric Corp | 標準セル方式大規模集積回路 |
US4782340A (en) * | 1986-08-22 | 1988-11-01 | Energy Conversion Devices, Inc. | Electronic arrays having thin film line drivers |
US4864390A (en) * | 1986-08-22 | 1989-09-05 | North American Philips Corporation | Display system with equal path lengths |
KR900004989B1 (en) * | 1986-09-11 | 1990-07-16 | Fujitsu Ltd | Active matrix type display and driving method |
JPS63101829A (ja) * | 1986-10-17 | 1988-05-06 | Nec Corp | アクテイブ・マトリツクス液晶表示装置およびその製造方法 |
JPS63104019A (ja) * | 1986-10-21 | 1988-05-09 | Matsushita Electric Ind Co Ltd | 投射型カラ−表示装置 |
US4753896A (en) * | 1986-11-21 | 1988-06-28 | Texas Instruments Incorporated | Sidewall channel stop process |
US4717084A (en) * | 1986-12-22 | 1988-01-05 | Cedarapids, Inc. | Hydraulic system for remote operable cone crushers |
DE3854163T2 (de) * | 1987-01-09 | 1996-04-04 | Hitachi Ltd | Verfahren und Schaltung zum Abtasten von kapazitiven Belastungen. |
JPH0738414B2 (ja) * | 1987-01-09 | 1995-04-26 | 株式会社東芝 | 半導体集積回路 |
US4849797A (en) * | 1987-01-23 | 1989-07-18 | Hosiden Electronics Co., Ltd. | Thin film transistor |
US4994877A (en) * | 1987-02-12 | 1991-02-19 | Ricoh Company, Ltd. | Photoelectric conversion semiconductor device with noise limiting circuit |
EP0283290B1 (de) * | 1987-03-18 | 1994-09-21 | Matsushita Electric Industrial Co., Ltd. | Videoprojektor |
GB2205191A (en) * | 1987-05-29 | 1988-11-30 | Philips Electronic Associated | Active matrix display system |
JPH0815210B2 (ja) * | 1987-06-04 | 1996-02-14 | 日本電気株式会社 | マスタスライス方式集積回路 |
US5024960A (en) * | 1987-06-16 | 1991-06-18 | Texas Instruments Incorporated | Dual LDD submicron CMOS process for making low and high voltage transistors with common gate |
FR2617635B1 (fr) * | 1987-07-03 | 1990-03-09 | Thomson Semiconducteurs | Procede de contact entre deux couches conductrices ou semi-conductrices deposees sur un substrat |
JPH067239B2 (ja) * | 1987-08-14 | 1994-01-26 | セイコー電子工業株式会社 | 電気光学装置 |
JPH01101646A (ja) * | 1987-10-15 | 1989-04-19 | Matsushita Electric Ind Co Ltd | アクティブマトリクス液晶表示装置の製造方法 |
US4916509A (en) * | 1987-11-13 | 1990-04-10 | Siliconix Incorporated | Method for obtaining low interconnect resistance on a grooved surface and the resulting structure |
US4864890A (en) * | 1987-12-15 | 1989-09-12 | Chrysler Motors Corporation | Axle drive differential for motor vehicles |
US4922240A (en) * | 1987-12-29 | 1990-05-01 | North American Philips Corp. | Thin film active matrix and addressing circuitry therefor |
US4884243A (en) * | 1988-02-19 | 1989-11-28 | California Institute Of Technology | Multi-port, optically addressed RAM |
JP2653099B2 (ja) * | 1988-05-17 | 1997-09-10 | セイコーエプソン株式会社 | アクティブマトリクスパネル,投写型表示装置及びビューファインダー |
JPH0276321A (ja) * | 1988-09-12 | 1990-03-15 | Fuji Xerox Co Ltd | 薄膜トランジスタアレイ |
US5095348A (en) * | 1989-10-02 | 1992-03-10 | Texas Instruments Incorporated | Semiconductor on insulator transistor |
US5073723A (en) * | 1990-08-10 | 1991-12-17 | Xerox Corporation | Space charge current limited shunt in a cascode circuit for hvtft devices |
JP2564725B2 (ja) * | 1991-12-24 | 1996-12-18 | 株式会社半導体エネルギー研究所 | Mos型トランジスタの作製方法 |
JP3941120B2 (ja) * | 1993-02-10 | 2007-07-04 | セイコーエプソン株式会社 | アクティブマトリクス基板の製造方法、薄膜トランジスタの製造方法及び薄膜トランジスタ |
JP3678437B2 (ja) * | 1994-03-16 | 2005-08-03 | 株式会社日立製作所 | 液晶表示装置の製造方法および液晶表示装置 |
-
1988
- 1988-05-17 JP JP11991988A patent/JP2653099B2/ja not_active Expired - Lifetime
-
1989
- 1989-04-28 KR KR1019940011609A patent/KR940010107B1/ko not_active Application Discontinuation
- 1989-04-28 KR KR1019890005609A patent/KR940009074B1/ko not_active IP Right Cessation
- 1989-05-15 US US07/351,758 patent/US5250931A/en not_active Expired - Lifetime
- 1989-05-16 EP EP20010128824 patent/EP1227469B1/de not_active Expired - Lifetime
- 1989-05-16 DE DE68928806T patent/DE68928806T2/de not_active Expired - Lifetime
- 1989-05-16 SG SG9602098A patent/SG81859A1/en unknown
- 1989-05-16 DE DE68929562T patent/DE68929562D1/de not_active Expired - Lifetime
- 1989-05-16 EP EP19890304929 patent/EP0342925B1/de not_active Expired - Lifetime
- 1989-05-16 EP EP19970200957 patent/EP0806702A1/de not_active Ceased
- 1989-05-16 SG SG9601705A patent/SG81185A1/en unknown
- 1989-05-16 DE DE68929091T patent/DE68929091T2/de not_active Expired - Lifetime
- 1989-05-16 EP EP19970200955 patent/EP0806701A1/de not_active Ceased
- 1989-05-16 EP EP19940106662 patent/EP0617309B1/de not_active Expired - Lifetime
- 1989-05-16 DE DE68920200T patent/DE68920200T2/de not_active Expired - Lifetime
- 1989-05-16 EP EP19940106660 patent/EP0610969B1/de not_active Expired - Lifetime
- 1989-05-16 DE DE68929189T patent/DE68929189T2/de not_active Expired - Lifetime
- 1989-05-16 EP EP19970200954 patent/EP0806700A1/de not_active Ceased
- 1989-05-16 SG SG1996002894A patent/SG63566A1/en unknown
- 1989-05-16 EP EP19940106661 patent/EP0609919B1/de not_active Expired - Lifetime
-
1992
- 1992-07-31 US US07923751 patent/US5341012B1/en not_active Expired - Lifetime
-
1995
- 1995-03-10 US US08/402,054 patent/US5616936A/en not_active Expired - Lifetime
- 1995-03-13 US US08/402,376 patent/US5583347A/en not_active Expired - Lifetime
- 1995-03-28 US US08/412,189 patent/US5656826A/en not_active Expired - Lifetime
- 1995-05-09 US US08/437,872 patent/US5811837A/en not_active Expired - Lifetime
- 1995-05-11 US US08/439,411 patent/US5648685A/en not_active Expired - Lifetime
- 1995-05-31 US US08/454,733 patent/US5677212A/en not_active Expired - Lifetime
- 1995-06-05 US US08/461,409 patent/US5591990A/en not_active Expired - Lifetime
-
1996
- 1996-09-26 US US08/721,222 patent/US5714771A/en not_active Expired - Lifetime
-
1997
- 1997-01-31 US US08/792,228 patent/US5780872A/en not_active Expired - Fee Related
- 1997-03-25 US US08/823,130 patent/US5904511A/en not_active Expired - Fee Related
- 1997-04-14 US US08/838,871 patent/US6486497B2/en not_active Expired - Fee Related
- 1997-06-17 US US08/877,469 patent/US5754158A/en not_active Expired - Fee Related
- 1997-06-26 HK HK101897A patent/HK101897A/xx unknown
-
1998
- 1998-11-24 JP JP10332647A patent/JPH11237643A/ja active Pending
- 1998-11-24 JP JP10332648A patent/JPH11237647A/ja active Pending
- 1998-12-28 HK HK98115927A patent/HK1014585A1/xx unknown
- 1998-12-28 HK HK98115928A patent/HK1014586A1/xx unknown
-
2002
- 2002-08-28 US US10/229,049 patent/US6700135B2/en not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106652967A (zh) * | 2017-03-21 | 2017-05-10 | 厦门天马微电子有限公司 | 显示面板、显示装置和应用于显示面板的驱动方法 |
CN106652967B (zh) * | 2017-03-21 | 2019-12-24 | 厦门天马微电子有限公司 | 显示面板、显示装置和应用于显示面板的驱动方法 |
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