JP5518381B2 - カラーセンサ及び当該カラーセンサを具備する電子機器 - Google Patents
カラーセンサ及び当該カラーセンサを具備する電子機器 Download PDFInfo
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- JP5518381B2 JP5518381B2 JP2009158854A JP2009158854A JP5518381B2 JP 5518381 B2 JP5518381 B2 JP 5518381B2 JP 2009158854 A JP2009158854 A JP 2009158854A JP 2009158854 A JP2009158854 A JP 2009158854A JP 5518381 B2 JP5518381 B2 JP 5518381B2
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- Prior art keywords
- light
- layer
- conversion circuit
- optical filter
- wiring
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- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- 239000004640 Melamine resin Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910002808 Si–O–Si Inorganic materials 0.000 description 1
- 241000862969 Stella Species 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- MQRWBMAEBQOWAF-UHFFFAOYSA-N acetic acid;nickel Chemical compound [Ni].CC(O)=O.CC(O)=O MQRWBMAEBQOWAF-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 238000001994 activation Methods 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052800 carbon group element Inorganic materials 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- GPTXWRGISTZRIO-UHFFFAOYSA-N chlorquinaldol Chemical compound ClC1=CC(Cl)=C(O)C2=NC(C)=CC=C21 GPTXWRGISTZRIO-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000001723 curing Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910000078 germane Inorganic materials 0.000 description 1
- QUZPNFFHZPRKJD-UHFFFAOYSA-N germane Chemical compound [GeH4] QUZPNFFHZPRKJD-UHFFFAOYSA-N 0.000 description 1
- 229910052986 germanium hydride Inorganic materials 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- 230000005660 hydrophilic surface Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229920000592 inorganic polymer Polymers 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229940078494 nickel acetate Drugs 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 1
- 150000002831 nitrogen free-radicals Chemical class 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 238000000016 photochemical curing Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000012266 salt solution Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000011359 shock absorbing material Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000003746 solid phase reaction Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 description 1
- PQDJYEQOELDLCP-UHFFFAOYSA-N trimethylsilane Chemical compound C[SiH](C)C PQDJYEQOELDLCP-UHFFFAOYSA-N 0.000 description 1
- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
Images
Classifications
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- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/255—Details, e.g. use of specially adapted sources, lighting or optical systems
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/06—Adjustment of display parameters
- G09G2320/0626—Adjustment of display parameters for control of overall brightness
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- G09G2360/00—Aspects of the architecture of display systems
- G09G2360/14—Detecting light within display terminals, e.g. using a single or a plurality of photosensors
- G09G2360/144—Detecting light within display terminals, e.g. using a single or a plurality of photosensors the light being ambient light
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
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- G09G2360/00—Aspects of the architecture of display systems
- G09G2360/14—Detecting light within display terminals, e.g. using a single or a plurality of photosensors
- G09G2360/145—Detecting light within display terminals, e.g. using a single or a plurality of photosensors the light originating from the display screen
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- G—PHYSICS
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- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
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- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/3406—Control of illumination source
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
Description
本実施の形態では、外部と接続するための端子数の減少を図ることのできるカラーセンサについて説明していく。なお本実施の形態で説明する光センサは、光電変換素子により得られる入射光量に関する信号を、高電源電位Vdd及び低電源電位Vssに接続された光電流変換回路部により、電流値または電圧値として外部に出力、若しくはデジタル信号として外部に出力、するものである。
本実施の形態では、上記実施の形態1で説明した光センサの作製方法について一例を示し、説明していく。本実施の形態では、一例として、実施の形態1の図11(B)の断面図で説明した光センサについての作製方法について説明するものとする。
上記実施の形態のカラーセンサにおいて、光センサが有する半導体素子層に含まれる半導体素子として様々な形態の電界効果トランジスタを用いることができる。本実施の形態では、光センサに適用することができる半導体素子として、単結晶半導体層を有する電界効果トランジスタについて詳細に説明する。
本実施の形態では、実施の形態2において、単結晶半導体基板より透光性基板へ単結晶半導体層を接合する工程の異なる例を示す。従って、実施の形態2と同一部分又は同様な機能を有する部分の繰り返しの説明は省略する。
本実施の形態では、上記実施の形態により得られたカラーセンサを含む様々な電子機器の例について説明する。電子機器として、コンピュータ、ディスプレイ、携帯電話、テレビジョン装置などが挙げられる。それらの電子機器の具体例を図18(A)乃至(C)、図19(A)(B)、図20、及び図21(A)(B)に示す。
101 半導体素子層
104 端子電極
105 端子電極
106 端子電極
107 端子電極
108 端子電極
109 配線
110 配線
111 配線
112 配線
113 配線
115 点線
116 遮光層
151 素子層
201 光電変換回路部
211 光電流変換回路
212 配線層
213 光電変換素子
300 光センサ
301 光電変換素子
302 対数圧縮回路
303 温度補正電圧生成回路
304 温度補正演算回路
305 回路部
400 光センサ
401 内部抵抗
500 光センサ
501 光電変換素子
502 AD変換回路
503 定電圧回路
504 発振回路
505 I2Cインターフェース回路
506 回路部
601 端子電極
602 端子電極
603 端子電極
604 端子電極
605 端子電極
606 端子電極
607 端子電極
608 端子電極
609 配線
610 配線
611 配線
612 配線
613 配線
614 配線
615 配線
616 配線
701 光センサ
714 透光性基板
730 樹脂
801 光電変換回路部
101B 光センサ
101G 光センサ
101R 光センサ
102B 光電流変換回路部
102G 光電流変換回路部
102R 光電流変換回路部
103B 光フィルタ
103G 光フィルタ
103R 光フィルタ
114B 透光性基板
114G 透光性基板
114R 透光性基板
116B 遮光層
116G 遮光層
116R 遮光層
117B 透光性樹脂層
117G 透光性樹脂層
117R 透光性樹脂層
1200 透光性基板
1202 透光性基板
1203 固定テープ
1204 ダイサー
1205 透光性基板
1207 透光性樹脂層
1208 ダイサー
1210 透光性樹脂層
1211 固定テープ
1213 透光性樹脂層
1214 透光性樹脂層
130B 樹脂
130G 樹脂
130R 樹脂
1309 透光性基板
1310 透光性基板
1312 下地絶縁膜
1313 ゲート絶縁膜
1314 配線
1316 層間絶縁膜
1317 層間絶縁膜
1318 保護電極
1319 配線
1320 接続電極
1324 封止層
1331 半導体層
1334 ゲート電極
1337 ドレイン領域
1341 ドレイン電極
1345 保護電極
1346 保護電極
1348 保護電極
1350 端子電極
1351 端子電極
1360 インターポーザ
1361 電極
1362 電極
1371 光電変換層
1371i i型半導体層
1371n n型半導体層
1371p p型半導体層
1373 トランジスタ
1374 配線
1375 配線
1377 保護膜
1378 封止膜
1601 透光性基板
1602 単結晶半導体層
1604 絶縁層
1608 単結晶半導体基板
1609 ブロッキング層
1610 脆弱化層
1621 保護層
1801 本体(A)
1802 本体(B)
1803 筐体
1804 操作キー
1805 音声出力部
1806 音声入力部
1807 回路基板
1808 表示パネル(A)
1809 表示パネル(B)
1811 透光性材料部
1812 センサ
1812 カラーセンサ
1810 蝶番
1821 本体
1822 筐体
1823 表示パネル
1824 操作キー
1825 音声出力部
1826 音声入力部
1827 カラーセンサ
1828 カラーセンサ
1831 本体
1832 筐体
1833 表示部
1834 キーボード
1835 外部接続ポート
1836 ポインティングデバイス
1841 筐体
1842 支持台
1843 表示部
1852 液晶層
1853 バックライト
1854A カラーセンサ
1854B カラーセンサ
1862 液晶パネル
202A 端子
202B 端子
202C 端子
202D 端子
2101 リリースボタン
2102 メインスイッチ
2103 ファインダ窓
2104 フラッシュ
2105 レンズ
2106 鏡胴
2107 筺体
2110 カラーセンサ
2111 ファインダ接眼窓
2112 モニタ
2113 操作ボタン
2201A 配線
2201B 配線
2201C 配線
2201D 配線
2201E 配線
2202A 電極
2202B 電極
2202C 電極
2202D 電極
2202E 電極
802A 端子
802B 端子
802C 端子
802D 端子
803A 端子
803B 端子
803C 端子
803D 端子
804A 端子
804B 端子
804C 端子
804D 端子
1012B オームコート
1215a1 端子電極
1215a2 端子電極
1201a 半導体素子層
1206a 溝
1209a 透光性基板
1210a 樹脂層
1212a 光センサ
1214a 透光性樹脂層
1851a 基板
1851b 基板
1852a 偏光フィルタ
1852b 偏光フィルタ
1861A 筐体
1861B 制御回路基板
2113a 操作ボタン
Claims (9)
- インターポーザと、第1の光センサと、第2の光センサと、を有し、
前記第1の光センサは、第1の光電流変換回路部と、第1の光フィルタと、を有し、
前記第2の光センサは、第2の光電流変換回路部と、第2の光フィルタと、を有し、
前記第1の光電流変換回路部及び前記第2の光電流変換回路部は、前記インターポーザの表面側に設けられた配線と電気的に接続され、
前記配線は、前記インターポーザに設けられた開口を介して、前記インターポーザの裏面側に設けられた電極と電気的に接続され、
前記電極は、前記第1の光電流変換回路部及び前記第2の光電流変換回路部と重畳せず、
前記電極は、前記第1の光フィルタと重畳する領域、又は、前記第2の光フィルタと重畳する領域を有することを特徴とするカラーセンサ。 - インターポーザと、第1の光センサと、第2の光センサと、を有し、
前記第1の光センサは、第1の光電流変換回路部と、第1の光フィルタと、を有し、
前記第2の光センサは、第2の光電流変換回路部と、第2の光フィルタと、を有し、
前記第1の光電流変換回路部及び前記第2の光電流変換回路部は、前記インターポーザの表面側に設けられた第1の配線と電気的に接続され、
前記第1の光電流変換回路部及び前記第2の光電流変換回路部は、前記インターポーザの表面側に設けられた第2の配線と電気的に接続され、
前記第1の配線は、前記インターポーザに設けられた第1の開口を介して、前記インターポーザの裏面側に設けられた第1の電極と電気的に接続され、
前記第2の配線は、前記インターポーザに設けられた第2の開口を介して、前記インターポーザの裏面側に設けられた第2の電極と電気的に接続され、
前記第1の電極には、第1の電位が供給され、
前記第2の電極には、第2の電位が供給され、
前記第1の電極は、前記第1の光電流変換回路部及び前記第2の光電流変換回路部と重畳せず、
前記第2の電極は、前記第1の光電流変換回路部及び前記第2の光電流変換回路部と重畳せず、
前記第1の電極は、前記第1の光フィルタと重畳する領域、又は、前記第2の光フィルタと重畳する領域を有し、
前記第2の電極は、前記第1の光フィルタと重畳する領域、又は、前記第2の光フィルタと重畳する領域を有することを特徴とするカラーセンサ。 - インターポーザと、光センサと、を有し、
前記光センサは、第1の光電流変換回路部と、第2の光電流変換回路部と、第1の光フィルタと、第2の光フィルタと、を有し、
前記第1の光電流変換回路部及び前記第2の光電流変換回路部は、前記インターポーザの表面側に設けられた配線と電気的に接続され、
前記配線は、前記インターポーザに設けられた開口を介して、前記インターポーザの裏面側に設けられた電極と電気的に接続され、
前記電極は、前記第1の光電流変換回路部及び前記第2の光電流変換回路部と重畳せず、
前記電極は、前記第1の光フィルタと重畳する領域、又は、前記第2の光フィルタと重畳する領域を有することを特徴とするカラーセンサ。 - インターポーザと、光センサと、を有し、
前記光センサは、第1の光電流変換回路部と、第2の光電流変換回路部と、第1の光フィルタと、第2の光フィルタと、を有し、
前記第1の光電流変換回路部及び前記第2の光電流変換回路部は、前記インターポーザの表面側に設けられた第1の配線と電気的に接続され、
前記第1の光電流変換回路部及び前記第2の光電流変換回路部は、前記インターポーザの表面側に設けられた第2の配線と電気的に接続され、
前記第1の配線は、前記インターポーザに設けられた第1の開口を介して、前記インターポーザの裏面側に設けられた第1の電極と電気的に接続され、
前記第2の配線は、前記インターポーザに設けられた第2の開口を介して、前記インターポーザの裏面側に設けられた第2の電極と電気的に接続され、
前記第1の電極には、第1の電位が供給され、
前記第2の電極には、第2の電位が供給され、
前記第1の電極は、前記第1の光電流変換回路部及び前記第2の光電流変換回路部と重畳せず、
前記第2の電極は、前記第1の光電流変換回路部及び前記第2の光電流変換回路部と重畳せず、
前記第1の電極は、前記第1の光フィルタと重畳する領域、又は、前記第2の光フィルタと重畳する領域を有し、
前記第2の電極は、前記第1の光フィルタと重畳する領域、又は、前記第2の光フィルタと重畳する領域を有することを特徴とするカラーセンサ。 - 請求項2又は4において、
前記インターポーザは、前記第1の配線及び第2の配線と電気的に接続されていない第3の配線、又は、前記第1の電極及び前記第2の電極と電気的に接続されていない第3の電極を有することを特徴とするカラーセンサ。 - 請求項1乃至5のいずれか一項にいて、
前記第1の光フィルタ及び前記第2の光フィルタは、透光性を有する樹脂に覆われていることを特徴とするカラーセンサ。 - 請求項1乃至6のいずれか一項において、
前記第1の光電流変換回路部及び前記第2の光電流変換回路部は、光電変換素子からの信号を対数圧縮することができる機能を有することを特徴とするカラーセンサ。 - 請求項1乃至6のいずれか一項において、
前記第1の光電流変換回路部及び前記第2の光電流変換回路部は、光電変換素子からの信号をデジタル信号に変換することができる機能を有することを特徴とするカラーセンサ。 - 請求項1乃至8のいずれか一項に記載のカラーセンサを有することを特徴とする電子機器。
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