JP5587558B2 - 光電変換装置 - Google Patents
光電変換装置 Download PDFInfo
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- JP5587558B2 JP5587558B2 JP2009064283A JP2009064283A JP5587558B2 JP 5587558 B2 JP5587558 B2 JP 5587558B2 JP 2009064283 A JP2009064283 A JP 2009064283A JP 2009064283 A JP2009064283 A JP 2009064283A JP 5587558 B2 JP5587558 B2 JP 5587558B2
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- film
- diode
- terminal
- photodiode
- current
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- QUZPNFFHZPRKJD-UHFFFAOYSA-N germane Chemical compound [GeH4] QUZPNFFHZPRKJD-UHFFFAOYSA-N 0.000 description 1
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- 235000013842 nitrous oxide Nutrition 0.000 description 1
- ORQBXQOJMQIAOY-UHFFFAOYSA-N nobelium Chemical compound [No] ORQBXQOJMQIAOY-UHFFFAOYSA-N 0.000 description 1
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- 238000007645 offset printing Methods 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002689 polyvinyl acetate Polymers 0.000 description 1
- 239000011118 polyvinyl acetate Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000012266 salt solution Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 238000007725 thermal activation Methods 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Description
図1を用いて、本発明のフォトICの構成について説明する。図1は、本発明のフォトICの構成を示す回路図の一例であり、図1に示すフォトICは、フォトダイオードを用いた受光素子101と、受光素子101に光が照射されることにより、該受光素子101で生成された電流が与えられる集積回路102と、ダイオード、好ましくはフォトダイオードを用いた少なくとも1つの保護ダイオード103とを有する。図1では、複数の位置に保護ダイオード103が設けられているフォトICの回路図を示しているが、保護ダイオード103は、いずれかの位置に少なくとも1つ設けられていればよい。
本実施の形態では、図3と図4に示した形態を組み合わせた、フォトICの構成について説明する。
本実施の形態では、図2と図3に示した形態を組み合わせた、フォトICの構成について説明する。
本実施の形態では、図2と図3に示した形態を組み合わせた、フォトICの構成について説明する。
本実施の形態では、集積回路として増幅回路を用いた本発明のフォトICの、具体的な構成について説明する。
次に、本発明のフォトICの作製方法について詳しく述べる。なお、本実施の形態では、薄膜トランジスタ(TFT)と、縦型接合タイプのPINフォトダイオードとを半導体素子の一例として示すが、本発明のフォトICに用いられる半導体素子はこれらに限定されない。例えばTFT及びPINフォトダイオードの他に、記憶素子、抵抗、ダイオード、容量、インダクタなどを用いることができる。また、本発明のフォトICは、縦型接合タイプのPINフォトダイオードの代わりに、縦型接合タイプのPNフォトダイオードを用いていても良い。
図15(B)に示すフォトICは、分断後の基板1501上に、受光素子、保護ダイオード及び集積回路を含む素子層1502a、素子層1502b、素子層1502cと、該素子層1502aに電気的に接続された端子1 1503a及び端子2 1504aと、該素子層1502bに電気的に接続された端子1 1503b及び端子2 1504bと、該素子層1502cに電気的に接続された端子1 1503c及び端子2 1504cとが形成されている。基板1501が透光性を有しているので、矢印で示すように、基板1501の裏面側からの光を、素子層1502a、素子層1502b、素子層1502c内の受光素子において受光することができる。
本発明のフォトICは、フォトダイオードが感知した光の強度を含む情報を、デジタル信号で出力するデジタル出力タイプであっても良いし、アナログ信号で出力するアナログ出力タイプであっても良い。本実施の形態では、デジタル出力タイプの、本発明のフォトICの構成の一例について説明する。
102 集積回路
103 保護ダイオード
103a 保護ダイオード
103b 保護ダイオード
103c 保護ダイオード
104 トランジスタ
105 トランジスタ
106 保護ダイオード
107 保護ダイオード
108 保護ダイオード
109 保護ダイオード
110 保護ダイオード
201 導電膜
202 導電膜
203 導電膜
204 導電膜
205 導電膜
206 領域
207 導電膜
208 導電膜
209 導電膜
210 導電膜
211 導電膜
212 導電膜
213 導電膜
214 導電膜
215 導電膜
216 導電膜
217 領域
400 基板
401 絶縁膜
402 半導体膜
403 半導体膜
404 半導体膜
405 トランジスタ
406 トランジスタ
407 ゲート絶縁膜
408 導電膜
409 導電膜
410 ゲート電極
411 ゲート電極
412 絶縁膜
413 絶縁膜
414 絶縁膜
415 導電膜
416 導電膜
417 導電膜
418 導電膜
419 導電膜
420 導電膜
421 導電膜
422 半導体膜
423 半導体膜
424 半導体膜
425 フォトダイオード
426 フォトダイオード
427 フォトダイオード
428 絶縁膜
429 絶縁膜
430 導電膜
431 導電膜
432 導電膜
433 絶縁膜
434 封止膜
435 導電膜
436 導電膜
437 チタン膜
438 ニッケル膜
439 金膜
440 導電膜
441 導電膜
900 ボンド基板
901 絶縁膜
902 欠陥層
903 絶縁膜
904 ベース基板
908 半導体膜
909 半導体膜
910 トランジスタ
1401 受光素子
1402 増幅回路
1403 ADコンバータ
1404 レギュレータ
1405 オシレータ
1406 インターフェース
1407 保護ダイオード
1501 基板
1502 素子層
1502a 素子層
1502b 素子層
1502c 素子層
5001 筐体
5002 表示部
5003 センサ部
5101 本体
5102 表示部
5103 音声入力部
5104 音声出力部
5105 操作キー
5106 センサ部
Claims (5)
- 第1の端子と、
第2の端子と、
光が照射されると第1の電流を生成するフォトダイオードと、
前記第1の電流が供給されることで、第2の電流を生成することができる機能を有する回路と、
前記第1の端子と前記第2の端子の間で、前記フォトダイオードと直列に、かつ前記フォトダイオードとバイアス方向が逆に接続されている少なくとも一つの第1のダイオードと、
前記第1の端子と前記第2の端子の間で、前記第2の電流の経路において、前記フォトダイオードと並列に、かつ前記フォトダイオードとバイアス方向が逆になるように接続されている少なくとも一つの第2のダイオードと、を有し、
前記フォトダイオード及び前記第1のダイオードおよび第2のダイオードは、同一構成の積層された複数の半導体膜をそれぞれ有し、
前記第1のダイオードおよび第2のダイオードは、光が照射されると電流を生成する機能を有するフォトダイオードであることを特徴とする光電変換装置。 - 第1の端子と、
第2の端子と、
光が照射されると第1の電流を生成するフォトダイオードと、
前記第1の電流が供給されることで、第2の電流を生成することができる機能を有する回路と、
前記第1の端子と前記第2の端子の間で、前記フォトダイオードと直列に、かつ前記フォトダイオードとバイアス方向が逆に接続されている少なくとも一つの第1のダイオードと、
前記第1の端子と前記第2の端子の間で、前記第2の電流の経路とは異なる経路において、前記フォトダイオードと並列に、かつ前記フォトダイオードとバイアス方向が同じになるように接続されている少なくとも一つの第2のダイオードと、
前記第2のダイオードへの光の入射を防ぐことができる機能を有する膜と、を有し、
前記フォトダイオード及び前記第1のダイオードおよび第2のダイオードは、同一構成の積層された複数の半導体膜をそれぞれ有し、
前記第1のダイオードは、光が照射されると電流を生成する機能を有するフォトダイオードであることを特徴とする光電変換装置。 - 第1の端子と、
第2の端子と、
光が照射されると第1の電流を生成するフォトダイオードと、
前記第1の電流が供給されることで、第2の電流を生成することができる機能を有する回路と、
前記第1の端子と前記第2の端子の間で、前記フォトダイオードと直列に、かつ前記フォトダイオードとバイアス方向が逆に接続されている少なくとも一つの第1のダイオードと、
前記第1の端子と前記第2の端子の間で、前記第2の電流の経路とは異なる経路において、前記フォトダイオードと並列に、かつ前記フォトダイオードとバイアス方向が逆になるように接続されている複数の第2のダイオードと、
前記複数の第2のダイオードへの光の入射を防ぐことができる機能を有する膜と、を有し、
前記フォトダイオード及び前記第1のダイオードおよび前記複数の第2のダイオードは、同一構成の積層された複数の半導体膜をそれぞれ有し、
前記第1のダイオードは、光が照射されると電流を生成する機能を有するフォトダイオードであることを特徴とする光電変換装置。 - 第1の端子と、
第2の端子と、
光が照射されると第1の電流を生成するフォトダイオードと、
前記第1の電流を増幅することで第2の電流を生成する、単数または複数のトランジスタを有する増幅回路と、
前記第1の端子と前記第2の端子の間で、前記フォトダイオードと直列に、かつ前記フォトダイオードとバイアス方向が逆に接続されている少なくとも一つの第1のダイオードと、
前記第1の端子と前記第2の端子の間で、前記第2の電流の経路において、前記フォトダイオードと並列に、かつ前記フォトダイオードとバイアス方向が逆になるように接続されている少なくとも一つの第2のダイオードと、を有し、
前記フォトダイオード及び前記第1のダイオードおよび第2のダイオードは、同一構成の積層された複数の半導体膜をそれぞれ有し、
前記第1のダイオードおよび第2のダイオードは、光が照射されると電流を生成する機能を有するフォトダイオードであることを特徴とする光電変換装置。 - 第1の端子と、
第2の端子と、
光が照射されると第1の電流を生成するフォトダイオードと、
前記第1の電流を増幅することで第2の電流を生成する、単数または複数のトランジスタを有する増幅回路と、
前記第1の端子と前記第2の端子の間で、前記フォトダイオードと直列に、かつ前記フォトダイオードとバイアス方向が逆に接続されている少なくとも一つの第1のダイオードと、
前記第1の端子と前記第2の端子の間で、前記第2の電流の経路とは異なる経路において、前記フォトダイオードと並列に、かつ前記フォトダイオードとバイアス方向が同じになるように接続されている少なくとも一つの第2のダイオードと、
前記第2のダイオードへの光の入射を防ぐことができる機能を有する膜と、を有し、
前記フォトダイオード及び前記第1のダイオードおよび第2のダイオードは、同一構成の積層された複数の半導体膜をそれぞれ有し、
前記第1のダイオードは、光が照射されると電流を生成する機能を有するフォトダイオードであることを特徴とする光電変換装置。
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JP2009260305A5 JP2009260305A5 (ja) | 2012-04-12 |
JP5587558B2 true JP5587558B2 (ja) | 2014-09-10 |
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Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
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US8749930B2 (en) * | 2009-02-09 | 2014-06-10 | Semiconductor Energy Laboratory Co., Ltd. | Protection circuit, semiconductor device, photoelectric conversion device, and electronic device |
KR20120027708A (ko) | 2010-09-13 | 2012-03-22 | 삼성모바일디스플레이주식회사 | X-선 검출기 패널 |
JP2013058562A (ja) * | 2011-09-07 | 2013-03-28 | Semiconductor Energy Lab Co Ltd | 光電変換装置 |
JP2013232885A (ja) * | 2012-04-06 | 2013-11-14 | Semiconductor Energy Lab Co Ltd | 半導体リレー |
JP2016214512A (ja) * | 2015-05-19 | 2016-12-22 | 株式会社東芝 | センサ |
JP2018107161A (ja) * | 2016-12-22 | 2018-07-05 | ソニーセミコンダクタソリューションズ株式会社 | 撮像パネル、および撮像パネルの製造方法、レントゲン装置、並びに撮像装置 |
CN110854143B (zh) * | 2018-08-20 | 2023-04-25 | 夏普株式会社 | 有源矩阵基板及x射线摄像面板 |
CN110911430A (zh) | 2018-09-14 | 2020-03-24 | 夏普株式会社 | 有源矩阵基板、以及具备该有源矩阵基板的拍摄面板 |
CN110911428A (zh) | 2018-09-14 | 2020-03-24 | 夏普株式会社 | 有源矩阵基板、以及具备该有源矩阵基板的拍摄面板 |
US11114496B2 (en) | 2019-01-30 | 2021-09-07 | Sharp Kabushiki Kaisha | Active matrix substrate, X-ray imaging panel with the same, and method for producing the same |
US20220375980A1 (en) * | 2019-11-06 | 2022-11-24 | Sony Semiconductor Solutions Corporation | Light receiving device and distance measuring device |
KR20210075515A (ko) * | 2019-12-13 | 2021-06-23 | 엘지디스플레이 주식회사 | 디지털 엑스레이 검출기용 박막 트랜지스터 어레이 기판과 엑스레이 검출기 및 그 제조 방법 |
US12002888B2 (en) * | 2021-03-09 | 2024-06-04 | Xerox Corporation | Switching device for driving an actuator |
US11673796B2 (en) * | 2021-03-09 | 2023-06-13 | Palo Alto Research Center Incorporated | Scalable high-voltage control circuits using thin film electronics |
WO2024004378A1 (ja) * | 2022-06-28 | 2024-01-04 | ソニーセミコンダクタソリューションズ株式会社 | 受光装置および測距装置 |
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US3450888A (en) * | 1966-10-11 | 1969-06-17 | Gen Electric | Speed control of moving paper responsive to transmittance of paper |
DE3321503A1 (de) * | 1983-06-15 | 1984-12-20 | Ernst Leitz Wetzlar Gmbh, 6330 Wetzlar | Verfahren und schaltungsanordnungen zur verstaerkung eines eingangsstroms |
JPS6260275A (ja) * | 1985-09-10 | 1987-03-16 | Matsushita Electric Ind Co Ltd | 光電変換素子の製造方法 |
US4959797A (en) * | 1987-12-11 | 1990-09-25 | Tensor Development, Inc. | System for tightening threaded fastener assemblies |
JPH0567765A (ja) * | 1991-01-11 | 1993-03-19 | Fuji Xerox Co Ltd | イメージセンサ |
US5216274A (en) * | 1991-01-11 | 1993-06-01 | Fuji Xerox Co., Ltd. | Image sensor |
JPH0629567A (ja) | 1992-07-13 | 1994-02-04 | Nippon Telegr & Teleph Corp <Ntt> | 受光回路 |
JPH06335162A (ja) * | 1993-03-19 | 1994-12-02 | Nec Corp | 半導体集積回路 |
US5389776A (en) * | 1993-11-22 | 1995-02-14 | At&T Corp. | FET-based optical receiver |
JPH10242773A (ja) * | 1997-02-27 | 1998-09-11 | Oki Electric Ind Co Ltd | 帰還増幅回路 |
JP3628936B2 (ja) * | 2000-05-11 | 2005-03-16 | 日本テキサス・インスツルメンツ株式会社 | フォトダイオードの製造方法 |
JP2001332567A (ja) * | 2000-05-22 | 2001-11-30 | Sony Corp | 電界効果トランジスタの保護回路 |
US6596981B1 (en) * | 2002-01-14 | 2003-07-22 | Texas Advanced Optoelectronic Solutions, Inc. | Method and apparatus for optical detector with special discrimination |
JP2004187168A (ja) * | 2002-12-05 | 2004-07-02 | Sumitomo Electric Ind Ltd | 回路構成、光受信器、及び光リンク |
JP2006040976A (ja) * | 2004-07-22 | 2006-02-09 | Hamamatsu Photonics Kk | 光検出器 |
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JP2009260305A (ja) | 2009-11-05 |
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