JP5376961B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5376961B2 JP5376961B2 JP2009010493A JP2009010493A JP5376961B2 JP 5376961 B2 JP5376961 B2 JP 5376961B2 JP 2009010493 A JP2009010493 A JP 2009010493A JP 2009010493 A JP2009010493 A JP 2009010493A JP 5376961 B2 JP5376961 B2 JP 5376961B2
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- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
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- MQRWBMAEBQOWAF-UHFFFAOYSA-N acetic acid;nickel Chemical compound [Ni].CC(O)=O.CC(O)=O MQRWBMAEBQOWAF-UHFFFAOYSA-N 0.000 description 1
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- 238000001994 activation Methods 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
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- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
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- 230000001413 cellular effect Effects 0.000 description 1
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- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- GPTXWRGISTZRIO-UHFFFAOYSA-N chlorquinaldol Chemical compound ClC1=CC(Cl)=C(O)C2=NC(C)=CC=C21 GPTXWRGISTZRIO-UHFFFAOYSA-N 0.000 description 1
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- QUZPNFFHZPRKJD-UHFFFAOYSA-N germane Chemical compound [GeH4] QUZPNFFHZPRKJD-UHFFFAOYSA-N 0.000 description 1
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- 229910021480 group 4 element Inorganic materials 0.000 description 1
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- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
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- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
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- 229940078494 nickel acetate Drugs 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 1
- 150000002831 nitrogen free-radicals Chemical class 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
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- 230000010355 oscillation Effects 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
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- 239000012266 salt solution Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
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- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
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- 239000004094 surface-active agent Substances 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
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- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 description 1
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- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
Images
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- H01L31/02—Details
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- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
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- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
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Description
本実施の形態では、より薄型化、及び小型化を付与することを目的とした半導体装置、及びその半導体装置を歩留まり良く作製する方法を、図1乃至8を用いて詳細に説明する。
本明細書に開示する半導体装置において、半導体素子層に含まれる半導体素子として様々な形態の電界効果トランジスタを用いることができる。本実施の形態では、半導体素子として、単結晶半導体層を有する電界効果トランジスタについて詳細に説明する。
本実施の形態では、実施の形態2において、単結晶半導体基板より透光性基板へ単結晶半導体層を接合する工程の異なる例を示す。従って、実施の形態2と同一部分又は同様な機能を有する部分の繰り返しの説明は省略する。
本実施の形態では、本明細書に開示する発明により得られたセンサを含む様々な電子機器の例について説明する。本明細書に開示する発明が適用される電子機器として、コンピュータ、ディスプレイ、携帯電話、テレビジョン装置などが挙げられる。それらの電子機器の具体例を図10(A)乃至(C)、図11(A)(B)、図12、図13(A)(B)、及び図14に示す。
Claims (4)
- インターポーザ上に実装された複数の半導体集積回路を有し、
前記複数の半導体集積回路はそれぞれ、光電変換素子と、側面に段差を有し幅寸法は前記段差よりも一方の面に向かう先の部分が小さい透光性基板と、前記透光性基板の他方の面に設けられた半導体素子層と、前記透光性基板の一方の面及び側面の一部を覆う有彩色の透光性樹脂層とを含み、
前記複数の半導体集積回路において、前記有彩色の透光性樹脂層の色が異なっており、
前記透光性基板は、前記側面に前記段差を境とした第1の領域と第2の領域を有し、前記第1の領域は前記半導体素子層が設けられた前記透光性基板の他方の面側であり、前記第2の領域は前記透光性基板の一方の面側であり、前記透光性基板の厚さ方向において、前記第2の領域の膜厚は前記第1の領域の膜厚より大きく、
前記有彩色の透光性樹脂層上に、透光性樹脂層が積層されて設けられており、
前記透光性樹脂層は、さらに前記複数の半導体集積回路の側面及び前記インターポーザとの接続部を覆うように設けられていることを特徴とする半導体装置。 - 請求項1において、
前記透光性樹脂層の膜厚が、前記有彩色の透光性樹脂層の膜厚より大きいことを特徴とする半導体装置。 - 請求項1または2において、
前記透光性樹脂層と前記有彩色の透光性樹脂層との間に遮光層が選択的に設けられていることを特徴とする半導体装置。 - 請求項1乃至3のいずれか一項において、
前記有彩色の透光性樹脂層が接している前記透光性基板の側面は、裾広がりの曲面を有することを特徴とする半導体装置。
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US (1) | US8227886B2 (ja) |
JP (1) | JP5376961B2 (ja) |
KR (1) | KR101706068B1 (ja) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
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EP2075840B1 (en) * | 2007-12-28 | 2014-08-27 | Semiconductor Energy Laboratory Co., Ltd. | Method for dicing a wafer with semiconductor elements formed thereon and corresponding device |
JP5317712B2 (ja) * | 2008-01-22 | 2013-10-16 | 株式会社半導体エネルギー研究所 | 半導体装置及び半導体装置の作製方法 |
JP5518381B2 (ja) | 2008-07-10 | 2014-06-11 | 株式会社半導体エネルギー研究所 | カラーセンサ及び当該カラーセンサを具備する電子機器 |
KR20100088833A (ko) * | 2009-02-02 | 2010-08-11 | 삼성전자주식회사 | 이어폰 장치 및 그 운용 방법 |
WO2011035090A1 (en) * | 2009-09-17 | 2011-03-24 | Tetrasun, Inc. | Selective transformation in functional films, and solar cell applications thereof |
KR101128546B1 (ko) * | 2010-09-06 | 2012-03-27 | 삼성전기주식회사 | 태양전지 모듈 및 그 제조 방법, 그리고 상기 태양전지 모듈을 구비하는 모바일 장치 |
US9496454B2 (en) | 2011-03-22 | 2016-11-15 | Micron Technology, Inc. | Solid state optoelectronic device with plated support substrate |
JP5982172B2 (ja) * | 2012-05-15 | 2016-08-31 | 株式会社ディスコ | ウエーハのレーザー加工方法 |
JP6264211B2 (ja) * | 2014-07-10 | 2018-01-24 | 住友電気工業株式会社 | 半導体装置の製造方法および半導体装置 |
CN104218190B (zh) * | 2014-08-26 | 2017-02-15 | 京东方科技集团股份有限公司 | 有机电致发光器件及其制造方法、显示装置 |
CN105097724A (zh) * | 2015-08-13 | 2015-11-25 | 苏州晶方半导体科技股份有限公司 | 封装结构及封装方法 |
WO2017024994A1 (zh) | 2015-08-13 | 2017-02-16 | 苏州晶方半导体科技股份有限公司 | 封装结构及封装方法 |
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US20090194154A1 (en) | 2009-08-06 |
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