JP2006032886A - 固体撮像装置及びその製造方法及びカメラモジュール - Google Patents
固体撮像装置及びその製造方法及びカメラモジュール Download PDFInfo
- Publication number
- JP2006032886A JP2006032886A JP2004304768A JP2004304768A JP2006032886A JP 2006032886 A JP2006032886 A JP 2006032886A JP 2004304768 A JP2004304768 A JP 2004304768A JP 2004304768 A JP2004304768 A JP 2004304768A JP 2006032886 A JP2006032886 A JP 2006032886A
- Authority
- JP
- Japan
- Prior art keywords
- solid
- state imaging
- imaging device
- filter layer
- transparent substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000003384 imaging method Methods 0.000 title claims abstract description 140
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 111
- 230000003287 optical effect Effects 0.000 claims abstract description 88
- 239000004065 semiconductor Substances 0.000 claims abstract description 44
- 238000000034 method Methods 0.000 claims abstract description 28
- 238000005304 joining Methods 0.000 claims abstract description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- 238000005520 cutting process Methods 0.000 claims description 7
- 239000007787 solid Substances 0.000 claims 1
- 239000011521 glass Substances 0.000 abstract description 39
- 239000006059 cover glass Substances 0.000 abstract description 33
- 239000000463 material Substances 0.000 abstract description 4
- 125000006850 spacer group Chemical group 0.000 description 16
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 230000005260 alpha ray Effects 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
- G02B7/02—Mountings, adjusting means, or light-tight connections, for optical elements for lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B13/00—Optical objectives specially designed for the purposes specified below
- G02B13/001—Miniaturised objectives for electronic devices, e.g. portable telephones, webcams, PDAs, small digital cameras
- G02B13/008—Miniaturised objectives for electronic devices, e.g. portable telephones, webcams, PDAs, small digital cameras designed for infrared light
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14632—Wafer-level processed structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/50—Constructional details
- H04N23/54—Mounting of pick-up tubes, electronic image sensors, deviation or focusing coils
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/50—Constructional details
- H04N23/55—Optical parts specially adapted for electronic image sensors; Mounting thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/162—Disposition
- H01L2924/16235—Connecting to a semiconductor or solid-state bodies, i.e. cap-to-chip
Abstract
【解決手段】 第1の工程では、固体撮像装置のカバーガラスの基材となるガラス基板の上に、赤外線カットフィルタ層や光学ローパスフィルタ層等の光学フィルタ層を形成する。この光学フィルタ層の形成には、フィルタ板の接合や、成膜によるフィルタ膜の形成等が用いられる。第2工程及び第3工程によって、多数の固体撮像素子が設けられた半導体ウエハとガラス基板とを接合する。第4工程では、ガラス基板と半導体ウエハとを各固体撮像素子ごとにダイシングし、多数の固体撮像装置を一括して製造する。これにより、一度の光学フィルタ層の形成により、多数の固体撮像装置のカバーガラス上に光学フィルタ層を形成することができる。
【選択図】 図4
Description
3,34,60,70 固体撮像装置
6 光学ユニット
9,62,72 固体撮像素子
10 半導体基板
12,35,61,71 カバーガラス
13,36,74 赤外線カットフィルタ層
14,37,75 光学ローパスフィルタ層
26,38,65 ガラス基板
27 赤外線カットフィルタ基板
28 光学ローパスフィルタ基板
32 半導体ウエハ
63,73 反射防止フィルタ層
Claims (12)
- 多数の固体撮像素子が形成された半導体ウエハの上に、前記固体撮像素子を覆って保護する透明基板を接合し、各前記固体撮像素子ごとに前記半導体ウエハと前記透明基板とを裁断することによって形成される固体撮像装置において、
前記透明基板の少なくとも一方の表面には、前記半導体ウエハ及び前記透明基板とともに裁断されてなる光学フィルタ層が形成されていることを特徴とする固体撮像装置。 - 前記光学フィルタ層は、前記透明基板上に接合された板状、またはシート状の光学フィルタからなることを特徴とする請求項1記載の固体撮像装置。
- 前記光学フィルタ層は、前記透明基板上に成膜によって形成したことを特徴とする請求項1または2記載の固体撮像装置。
- 前記光学フィルタ層として、赤外線カットフィルタを用いたことを特徴とする請求項1ないし3いずれか記載の固体撮像装置。
- 前記光学フィルタ層として、光学ローパスフィルタを用いたことを特徴とする請求項1ないし3いずれか記載の固体撮像装置。
- 前記光学フィルタ層として、反射防止フィルタを用いたことを特徴とする請求項1ないし3いずれか記載の固体撮像装置。
- 透明基板の少なくとも一方の表面に光学フィルタ層を形成する工程と、
多数の固体撮像素子が形成された半導体ウエハと前記透明基板とを接合する工程と、
前記半導体ウエハと前記透明基板とを前記各固体撮像素子ごとに裁断する工程とを含むことを特徴とする固体撮像装置の製造方法。 - 多数の固体撮像素子が形成された半導体ウエハと透明基板とを接合する工程と、
前記透明基板の表面に光学フィルタ層を形成する工程と、
前記半導体ウエハと前記透明基板とを各前記固体撮像素子ごとに裁断する工程とを含むことを特徴とする固体撮像装置の製造方法。 - 前記透明基板の表面に前記光学フィルタ層を形成する工程は、前記透明基板に板状、またはシート状の光学フィルタを接合する工程からなることを特徴とする請求項7または8記載の固体撮像装置の製造方法。
- 前記透明基板の表面に前記光学フィルタ層を形成する工程は、前記透明基板の表面に成膜によって該光学フィルタ層を形成する工程からなることを特徴とする請求項7ないし9いずれか記載の固体撮像装置の製造方法。
- 請求項1ないし6いずれか記載の前記固体撮像装置と、前記固体撮像素子上に被写体像を結像する撮像光学系が組み込まれた光学ユニットとを備えたことを特徴とするカメラモジュール。
- 請求項7ないし10いずれか記載の製造方法を用いて製造された前記固体撮像装置と、前記固体撮像素子上に被写体像を結像する撮像光学系が組み込まれた光学ユニットとを備えたことを特徴とするカメラモジュール。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004304768A JP2006032886A (ja) | 2004-06-15 | 2004-10-19 | 固体撮像装置及びその製造方法及びカメラモジュール |
EP10009362A EP2253982A1 (en) | 2004-06-15 | 2005-06-14 | Solid-state imaging device and manufacturing method thereof |
US11/151,340 US20050275746A1 (en) | 2004-06-15 | 2005-06-14 | Solid-state imaging device and manufacturing method thereof, and camera module |
EP05253677A EP1607782A3 (en) | 2004-06-15 | 2005-06-14 | Solid-state imaging device and manufacturing method thereof, and camera module |
KR1020050050767A KR100691711B1 (ko) | 2004-06-15 | 2005-06-14 | 고체 촬상 장치와 그 제조 방법, 및 카메라 모듈 |
US12/200,444 US20090002532A1 (en) | 2004-06-15 | 2008-08-28 | Solid-state imaging device and manufacturing method thereof, and camera module |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004177419 | 2004-06-15 | ||
JP2004304768A JP2006032886A (ja) | 2004-06-15 | 2004-10-19 | 固体撮像装置及びその製造方法及びカメラモジュール |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005360948A Division JP2006100859A (ja) | 2004-06-15 | 2005-12-14 | 固体撮像装置及びその製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2006032886A true JP2006032886A (ja) | 2006-02-02 |
Family
ID=34977065
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004304768A Pending JP2006032886A (ja) | 2004-06-15 | 2004-10-19 | 固体撮像装置及びその製造方法及びカメラモジュール |
Country Status (4)
Country | Link |
---|---|
US (2) | US20050275746A1 (ja) |
EP (2) | EP2253982A1 (ja) |
JP (1) | JP2006032886A (ja) |
KR (1) | KR100691711B1 (ja) |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100747611B1 (ko) * | 2006-03-08 | 2007-08-08 | 삼성전자주식회사 | 미소소자 패키지 및 그 제조방법 |
US7719588B2 (en) | 2006-08-10 | 2010-05-18 | Panasonic Corporation | Solid-state imaging device and camera |
US8390003B2 (en) | 2008-05-29 | 2013-03-05 | Sharp Kabushiki Kaisha | Electronic element wafer module with reduced warping |
JP2015015444A (ja) * | 2013-06-06 | 2015-01-22 | 株式会社リコー | 撮像素子パッケージ及び撮像装置 |
JP2015037309A (ja) * | 2013-08-16 | 2015-02-23 | 海華科技股▲分▼有限公司 | 全体厚さを低減させるイメージセンサモジュール及びその製造方法 |
WO2015125871A1 (ja) * | 2014-02-20 | 2015-08-27 | 富士フイルム株式会社 | 感光性樹脂組成物、硬化物及びその製造方法、樹脂パターン製造方法、硬化膜、液晶表示装置、有機el表示装置、赤外線カットフィルター、並びに、固体撮像装置 |
WO2015125870A1 (ja) * | 2014-02-20 | 2015-08-27 | 富士フイルム株式会社 | 感光性樹脂組成物、硬化物及びその製造方法、樹脂パターン製造方法、硬化膜、液晶表示装置、有機el表示装置、赤外線カットフィルター、並びに、固体撮像装置 |
WO2019026675A1 (ja) * | 2017-07-31 | 2019-02-07 | Jsr株式会社 | 光電変換素子および接着剤 |
JP2019029525A (ja) * | 2017-07-31 | 2019-02-21 | Jsr株式会社 | 環境光センサおよび接着層形成用組成物 |
CN110610951A (zh) * | 2014-01-27 | 2019-12-24 | 索尼公司 | 具有改善的切割性能的图像传感器、其制造装置及制造方法 |
KR20200037219A (ko) | 2017-07-31 | 2020-04-08 | 제이에스알 가부시끼가이샤 | 광전 변환 장치 |
CN111052384A (zh) * | 2017-09-12 | 2020-04-21 | 索尼半导体解决方案公司 | 成像器件、成像器件的制造方法、成像装置和电子设备 |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006100763A (ja) * | 2004-09-06 | 2006-04-13 | Fuji Photo Film Co Ltd | 固体撮像装置の製造方法及び接合装置 |
WO2006109638A1 (ja) * | 2005-04-08 | 2006-10-19 | Konica Minolta Opto, Inc. | 固体撮像素子及びその製造方法 |
US8093672B2 (en) * | 2005-10-28 | 2012-01-10 | Panasonic Corporation | Solid-state imaging device |
JP5427337B2 (ja) * | 2005-12-21 | 2014-02-26 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | 半導体装置及びその製造方法、カメラモジュール |
JP2007208045A (ja) * | 2006-02-02 | 2007-08-16 | Sony Corp | 撮像装置、カメラモジュール、電子機器および撮像装置の製造方法 |
CN101047783A (zh) * | 2006-03-31 | 2007-10-03 | 鸿富锦精密工业(深圳)有限公司 | 一种微型摄像装置 |
CN101114039A (zh) * | 2006-07-28 | 2008-01-30 | 鸿富锦精密工业(深圳)有限公司 | 镜头模块 |
EP2069851A4 (en) * | 2006-09-14 | 2010-02-24 | Tessera Tech Hungary Kft | IMAGING SYSTEM WITH ASSOUPLY ASSEMBLED TOLERANCES AND ASSOCIATED METHODS |
CN101261347A (zh) * | 2007-03-09 | 2008-09-10 | 鸿富锦精密工业(深圳)有限公司 | 相机模组及其制造方法 |
KR100862486B1 (ko) * | 2007-05-31 | 2008-10-08 | 삼성전기주식회사 | 카메라 모듈 패키지 |
KR100906841B1 (ko) * | 2007-10-01 | 2009-07-08 | 엘지이노텍 주식회사 | 카메라모듈 및 그 제작 방법 |
CN101419323A (zh) * | 2007-10-22 | 2009-04-29 | 鸿富锦精密工业(深圳)有限公司 | 微型相机模组及其制作方法 |
US9350976B2 (en) | 2007-11-26 | 2016-05-24 | First Sensor Mobility Gmbh | Imaging unit of a camera for recording the surroundings with optics uncoupled from a circuit board |
DE102007057172B4 (de) * | 2007-11-26 | 2009-07-02 | Silicon Micro Sensors Gmbh | Stereokamera zur Umgebungserfassung |
CN101465344B (zh) * | 2007-12-18 | 2011-02-02 | 鸿富锦精密工业(深圳)有限公司 | 影像模组封装结构 |
EP2075840B1 (en) * | 2007-12-28 | 2014-08-27 | Semiconductor Energy Laboratory Co., Ltd. | Method for dicing a wafer with semiconductor elements formed thereon and corresponding device |
JP5317712B2 (ja) * | 2008-01-22 | 2013-10-16 | 株式会社半導体エネルギー研究所 | 半導体装置及び半導体装置の作製方法 |
JP5376961B2 (ja) * | 2008-02-01 | 2013-12-25 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP5299188B2 (ja) * | 2009-09-16 | 2013-09-25 | 富士通株式会社 | 撮像装置、それを備えた電子装置、及び撮像装置の製造方法 |
JP5635378B2 (ja) * | 2010-11-30 | 2014-12-03 | 日東電工株式会社 | 半導体ウエハ搬送方法および半導体ウエハ搬送装置 |
DE102011050870A1 (de) * | 2011-06-06 | 2012-12-06 | Schott Ag | Anzeigevorrichtung |
TW201349470A (zh) * | 2012-05-16 | 2013-12-01 | Azurewave Technologies Inc | 用於降低整體厚度的影像感測模組 |
JP2015032653A (ja) | 2013-08-01 | 2015-02-16 | 株式会社東芝 | 固体撮像装置 |
US9386203B2 (en) * | 2013-10-28 | 2016-07-05 | Omnivision Technologies, Inc. | Compact spacer in multi-lens array module |
US10466501B2 (en) * | 2016-05-26 | 2019-11-05 | Ams Sensors Singapore Pte. Ltd. | Optoelectronic modules including an optical system tilted with respect to a focal plane |
CN107843966B (zh) * | 2016-09-18 | 2021-05-04 | 中芯国际集成电路制造(上海)有限公司 | 用于装配微透镜阵列组件的方法和系统 |
JP6791584B2 (ja) * | 2017-02-01 | 2020-11-25 | 株式会社ディスコ | 加工方法 |
FR3078438B1 (fr) * | 2018-02-27 | 2020-07-17 | Stmicroelectronics (Grenoble 2) Sas | Procede de fabrication d'une pluralite de boitiers electroniques |
US11073746B2 (en) * | 2018-11-01 | 2021-07-27 | Guangzhou Luxvisions Innovation Technology Limited | Image-capturing assembly |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000216368A (ja) * | 1999-01-25 | 2000-08-04 | Asahi Optical Co Ltd | 撮像装置の赤外カットフィルタ取付け構造 |
JP2001339055A (ja) * | 2000-05-29 | 2001-12-07 | Asahi Optical Co Ltd | 固体撮像装置のカバー部材と固体撮像装置 |
JP2002231921A (ja) | 2001-02-06 | 2002-08-16 | Olympus Optical Co Ltd | 固体撮像装置及びその製造方法 |
US6635941B2 (en) * | 2001-03-21 | 2003-10-21 | Canon Kabushiki Kaisha | Structure of semiconductor device with improved reliability |
JP2002373977A (ja) * | 2001-06-14 | 2002-12-26 | Canon Inc | 固体撮像装置 |
JP2003084125A (ja) * | 2001-07-04 | 2003-03-19 | Seiko Epson Corp | カラーフィルタの製造方法及び製造装置、液晶表示装置の製造方法及び製造装置、el発光層配設基板の製造方法及び製造装置、el発光装置の製造方法及び製造装置、成膜方法及び成膜装置、電気光学装置及びその製造方法並びに電子機器 |
JP2003037293A (ja) * | 2001-07-25 | 2003-02-07 | Nichia Chem Ind Ltd | チップ部品型発光素子とその製造方法 |
JP2004064272A (ja) | 2002-07-26 | 2004-02-26 | West Electric Co Ltd | カメラモジュール |
US7033664B2 (en) * | 2002-10-22 | 2006-04-25 | Tessera Technologies Hungary Kft | Methods for producing packaged integrated circuit devices and packaged integrated circuit devices produced thereby |
JP4510403B2 (ja) * | 2003-05-08 | 2010-07-21 | 富士フイルム株式会社 | カメラモジュール及びカメラモジュールの製造方法 |
US7329861B2 (en) * | 2003-10-14 | 2008-02-12 | Micron Technology, Inc. | Integrally packaged imaging module |
-
2004
- 2004-10-19 JP JP2004304768A patent/JP2006032886A/ja active Pending
-
2005
- 2005-06-14 EP EP10009362A patent/EP2253982A1/en not_active Withdrawn
- 2005-06-14 EP EP05253677A patent/EP1607782A3/en not_active Withdrawn
- 2005-06-14 US US11/151,340 patent/US20050275746A1/en not_active Abandoned
- 2005-06-14 KR KR1020050050767A patent/KR100691711B1/ko not_active IP Right Cessation
-
2008
- 2008-08-28 US US12/200,444 patent/US20090002532A1/en not_active Abandoned
Cited By (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100747611B1 (ko) * | 2006-03-08 | 2007-08-08 | 삼성전자주식회사 | 미소소자 패키지 및 그 제조방법 |
US7719588B2 (en) | 2006-08-10 | 2010-05-18 | Panasonic Corporation | Solid-state imaging device and camera |
US8390003B2 (en) | 2008-05-29 | 2013-03-05 | Sharp Kabushiki Kaisha | Electronic element wafer module with reduced warping |
JP2015015444A (ja) * | 2013-06-06 | 2015-01-22 | 株式会社リコー | 撮像素子パッケージ及び撮像装置 |
JP2015037309A (ja) * | 2013-08-16 | 2015-02-23 | 海華科技股▲分▼有限公司 | 全体厚さを低減させるイメージセンサモジュール及びその製造方法 |
US11594563B2 (en) | 2014-01-27 | 2023-02-28 | Sony Corporation | Image sensor having improved dicing properties |
CN110610951B (zh) * | 2014-01-27 | 2022-11-18 | 索尼公司 | 具有改善的切割性能的图像传感器、其制造装置及制造方法 |
CN110610951A (zh) * | 2014-01-27 | 2019-12-24 | 索尼公司 | 具有改善的切割性能的图像传感器、其制造装置及制造方法 |
JPWO2015125871A1 (ja) * | 2014-02-20 | 2017-03-30 | 富士フイルム株式会社 | 感光性樹脂組成物、硬化物及びその製造方法、樹脂パターン製造方法、硬化膜、液晶表示装置、有機el表示装置、赤外線カットフィルター、並びに、固体撮像装置 |
JPWO2015125870A1 (ja) * | 2014-02-20 | 2017-03-30 | 富士フイルム株式会社 | 感光性樹脂組成物、硬化物及びその製造方法、樹脂パターン製造方法、硬化膜、液晶表示装置、有機el表示装置、赤外線カットフィルター、並びに、固体撮像装置 |
US10133175B2 (en) | 2014-02-20 | 2018-11-20 | Fujifilm Corporation | Photosensitive resin composition, cured product and method for producing same, method for producing resin pattern, cured film, liquid crystal display device, organic el display device, infrared cut filter, and solid-state imaging device |
US9599901B2 (en) | 2014-02-20 | 2017-03-21 | Fujifilm Corporation | Photosensitive resin composition, cured product and method for producing same, method for producing resin pattern, cured film, liquid crystal display device, organic el display device, infrared cut filter, and solid-state imaging device |
WO2015125870A1 (ja) * | 2014-02-20 | 2015-08-27 | 富士フイルム株式会社 | 感光性樹脂組成物、硬化物及びその製造方法、樹脂パターン製造方法、硬化膜、液晶表示装置、有機el表示装置、赤外線カットフィルター、並びに、固体撮像装置 |
WO2015125871A1 (ja) * | 2014-02-20 | 2015-08-27 | 富士フイルム株式会社 | 感光性樹脂組成物、硬化物及びその製造方法、樹脂パターン製造方法、硬化膜、液晶表示装置、有機el表示装置、赤外線カットフィルター、並びに、固体撮像装置 |
WO2019026675A1 (ja) * | 2017-07-31 | 2019-02-07 | Jsr株式会社 | 光電変換素子および接着剤 |
JP2019029525A (ja) * | 2017-07-31 | 2019-02-21 | Jsr株式会社 | 環境光センサおよび接着層形成用組成物 |
KR20200037219A (ko) | 2017-07-31 | 2020-04-08 | 제이에스알 가부시끼가이샤 | 광전 변환 장치 |
JPWO2019026675A1 (ja) * | 2017-07-31 | 2020-08-20 | Jsr株式会社 | 光電変換素子および接着剤 |
CN111052384A (zh) * | 2017-09-12 | 2020-04-21 | 索尼半导体解决方案公司 | 成像器件、成像器件的制造方法、成像装置和电子设备 |
Also Published As
Publication number | Publication date |
---|---|
KR100691711B1 (ko) | 2007-03-09 |
US20090002532A1 (en) | 2009-01-01 |
EP2253982A1 (en) | 2010-11-24 |
EP1607782A3 (en) | 2006-12-20 |
US20050275746A1 (en) | 2005-12-15 |
EP1607782A2 (en) | 2005-12-21 |
KR20060049586A (ko) | 2006-05-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2006032886A (ja) | 固体撮像装置及びその製造方法及びカメラモジュール | |
TWI394269B (zh) | 電子元件晶圓模組、電子元件晶圓模組之製造方法、電子元件模組及電子資訊裝置 | |
KR100705349B1 (ko) | 고체촬상장치, 반도체 웨이퍼 및 카메라 모듈 | |
US20100044815A1 (en) | Cmos image sensor package and camera module using same | |
US7511262B2 (en) | Optical device and assembly for use with imaging dies, and wafer-label imager assembly | |
KR100809682B1 (ko) | 투명 커버가 부착되어 있는 광학 장치의 제조방법 및 이를이용한 광학 장치 모듈의 제조방법 | |
US7728398B2 (en) | Micro camera module and method of manufacturing the same | |
JP2009290033A (ja) | 電子素子ウェハモジュールおよびその製造方法、電子素子モジュール、電子情報機器 | |
US20080293179A1 (en) | Microelectronic imagers with integrated optical devices and methods for manufacturing such microelectronic imagers | |
TWI467747B (zh) | 固態攝影裝置及其製造方法 | |
CN102386192B (zh) | 制造光学传感器的方法、光学传感器和包括其的照相机 | |
JP2007510291A (ja) | カメラモジュール及びこのようなカメラモジュールの製造方法 | |
JP4672301B2 (ja) | 固体撮像装置及び固体撮像装置の製造方法 | |
WO2007052796A1 (ja) | 光学装置用モジュール、光学装置用モジュールの製造方法、及び、構造体 | |
JP2006148710A (ja) | 撮像モジュール及び撮像モジュールの製造方法 | |
US20080296577A1 (en) | Camera module package | |
CN100459140C (zh) | 固态成像器件及其制造方法和照相机模块 | |
JP2005109092A (ja) | 固体撮像装置及び該固体撮像装置を備えた撮像装置 | |
JP2010165939A (ja) | 固体撮像装置及びその製造方法 | |
JP2006100859A (ja) | 固体撮像装置及びその製造方法 | |
JP2010161784A (ja) | カメラモジュールの組み立て方法 | |
JP2009111130A (ja) | 撮像装置及びその製造方法 | |
US20100044553A1 (en) | Cmos image sensor package and camera module with same | |
JP2006049371A (ja) | 固体撮像装置の梱包構造 | |
JP2008166939A (ja) | カメラモジュール |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A712 Effective date: 20070105 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20070228 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100209 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20100210 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20100630 |