JP4365743B2 - 撮像装置 - Google Patents
撮像装置 Download PDFInfo
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- JP4365743B2 JP4365743B2 JP2004218913A JP2004218913A JP4365743B2 JP 4365743 B2 JP4365743 B2 JP 4365743B2 JP 2004218913 A JP2004218913 A JP 2004218913A JP 2004218913 A JP2004218913 A JP 2004218913A JP 4365743 B2 JP4365743 B2 JP 4365743B2
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- H—ELECTRICITY
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
受光面を有し、前記受光面上に複数のレンズ部材が配設された受光素子と、
前記受光素子の受光面上に、スペーサを介して配設された板状透明部材と、
少なくとも前記板状透明部材の外周部に配設された樹脂と
を有する撮像装置であって、
前記板状透明部材は、前記受光素子側に位置する第1の主面と、前記第1の主面と対向する第2の主面と、前記第1の主面に垂直な第1の側面と前記第2の主面と鈍角をなす第2の側面とが共に形成されてなる側面とを有し、
前記第1の主面の面積が、前記第2の主面の面積よりも大きく、
前記受光素子と前記板状透明部材との間隙部分には空間が形成され、
前記板状透明部材は前記レンズ部材に直接接するよう配設されていることを特徴とするものである。
一方、支持基板23の下面に形成されたランドには、はんだボールからなる外部接続端子31が配設されている。従って、撮像素子22の電極パッド39は、ワイヤ28、支持基板23に於ける配線及び層間接続用ビアを介して外部接続端子に電気的に接続されている。
また、透明部材25Aの表面には、必要に応じてAR(反射防止)コート及び/或いはIR(赤外線阻止)コートなどが施される。
図9(A)に示す透明部材25Dは、その側面36Cが階段状に形成された構造を有する。
また、図9(B)に示す透明部材25Eは、その側面36Cの下部(第1の主面25a側)に垂直部57が設けられている。更に、図9(C)に示す透明部材25Fあっては、その側面36Eを、曲率を持った曲面としている。これらの透明部材25D〜25Fにあっても、前記第1実施例の構成に比べ、透明部材25D〜25Fと封止樹脂26との接触面積が実質的に拡大され、或いはアンカー効果を奏する。
一方、当該マイクロレンズ24は、図15に拡大して示されるように、撮像素子22に設けられたカラーフィルタ層33上に配設されている。また、個々のレンズ体24aは、撮像素子22の受光面に複数個形成されたフォトダイオード34に一対一対応して配置される。即ち、レンズ体24aは、フォトダイオード34と同数又はそれ以上の個数形成されている。
22 撮像素子
23 支持基板
24 マイクロレンズ
24a レンズ体
25A〜25F 透明部材
26 封止樹脂
27 ダイボンディング材
28 ワイヤ
30 受光面
31 外部接続端子
32 光透過性接着剤
35 スペーサ
36A〜36E 側面
39 電極パッド
40 ボンディングパッド
44 金型
45 上金型
45A 樹脂
46 下金型
47 空間
55 空気層
60 透明封止樹脂
Claims (4)
- 受光面を有し、前記受光面上に複数のレンズ部材が配設された受光素子と、
前記受光素子の受光面上に、スペーサを介して配設された板状透明部材と、
少なくとも前記板状透明部材の外周部に配設された樹脂と
を有する撮像装置であって、
前記板状透明部材は、前記受光素子側に位置する第1の主面と、前記第1の主面と対向する第2の主面と、前記第1の主面に垂直な第1の側面と前記第2の主面と鈍角をなす第2の側面とが共に形成されてなる側面とを有し、
前記第1の主面の面積が、前記第2の主面の面積よりも大きく、
前記受光素子と前記板状透明部材との間隙部分には空間が形成され、
前記板状透明部材は前記レンズ部材に直接接するよう配設されていることを特徴とする撮像装置。 - 請求項1記載の撮像装置において、
前記第1及び第2の側面が、粗面化されていることを特徴とする撮像装置。 - 請求項1記載の撮像装置において、
前記第1及び第2の側面に、光吸収性被膜が配設されていることを特徴とする撮像装置。 - 請求項1記載の撮像装置において、
前記樹脂は透明樹脂からなり、前記板状透明部材の第2の主面上にも配設されていることを特徴とする撮像装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004218913A JP4365743B2 (ja) | 2004-07-27 | 2004-07-27 | 撮像装置 |
US10/994,634 US7616250B2 (en) | 2004-07-27 | 2004-11-23 | Image capturing device |
TW093136142A TWI249344B (en) | 2004-07-27 | 2004-11-24 | Image capturing device |
KR1020040097841A KR20060010686A (ko) | 2004-07-27 | 2004-11-26 | 촬상 장치 |
CNB2004101002157A CN100466269C (zh) | 2004-07-27 | 2004-12-03 | 图像捕捉设备 |
KR1020070023927A KR100858457B1 (ko) | 2004-07-27 | 2007-03-12 | 촬상 장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004218913A JP4365743B2 (ja) | 2004-07-27 | 2004-07-27 | 撮像装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006041183A JP2006041183A (ja) | 2006-02-09 |
JP4365743B2 true JP4365743B2 (ja) | 2009-11-18 |
Family
ID=35731685
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004218913A Expired - Fee Related JP4365743B2 (ja) | 2004-07-27 | 2004-07-27 | 撮像装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7616250B2 (ja) |
JP (1) | JP4365743B2 (ja) |
KR (2) | KR20060010686A (ja) |
CN (1) | CN100466269C (ja) |
TW (1) | TWI249344B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11960139B2 (en) | 2018-02-27 | 2024-04-16 | Sony Semiconductor Solutions Corporation | Camera module |
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US20060197201A1 (en) * | 2005-02-23 | 2006-09-07 | Hsin Chung H | Image sensor structure |
JP2007142058A (ja) * | 2005-11-17 | 2007-06-07 | Matsushita Electric Ind Co Ltd | 半導体撮像素子およびその製造方法並びに半導体撮像装置とその製造方法 |
JP4794283B2 (ja) * | 2005-11-18 | 2011-10-19 | パナソニック株式会社 | 固体撮像装置 |
JP2007166299A (ja) * | 2005-12-14 | 2007-06-28 | Sony Corp | 固体撮像素子、色分解撮像光学系及び撮像装置 |
US7936062B2 (en) | 2006-01-23 | 2011-05-03 | Tessera Technologies Ireland Limited | Wafer level chip packaging |
US20070230948A1 (en) * | 2006-04-03 | 2007-10-04 | Visera Technologies Company Ltd., R.O.C. | Lens structure for an imaging device and method making same |
JP4970845B2 (ja) * | 2006-05-16 | 2012-07-11 | ルネサスエレクトロニクス株式会社 | 固体撮像装置 |
US20080118241A1 (en) * | 2006-11-16 | 2008-05-22 | Tekolste Robert | Control of stray light in camera systems employing an optics stack and associated methods |
JP2008166632A (ja) * | 2006-12-29 | 2008-07-17 | Manabu Bonshihara | 固体撮像装置及びその製造方法並びにカメラモジュール |
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JP2008193441A (ja) * | 2007-02-06 | 2008-08-21 | Matsushita Electric Ind Co Ltd | 光学デバイス及びその製造方法 |
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CN1728396A (zh) | 2006-02-01 |
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CN100466269C (zh) | 2009-03-04 |
KR100858457B1 (ko) | 2008-09-16 |
TWI249344B (en) | 2006-02-11 |
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