JP2012186434A - 固体撮像装置 - Google Patents
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- 238000003384 imaging method Methods 0.000 title claims abstract description 90
- 230000003287 optical effect Effects 0.000 claims abstract description 25
- 238000007639 printing Methods 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 26
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 22
- 238000007789 sealing Methods 0.000 claims description 10
- 238000000034 method Methods 0.000 abstract description 22
- 230000001413 cellular effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 50
- 239000011521 glass Substances 0.000 description 42
- 239000011347 resin Substances 0.000 description 25
- 229920005989 resin Polymers 0.000 description 25
- 239000010408 film Substances 0.000 description 12
- 238000005516 engineering process Methods 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 10
- 239000002390 adhesive tape Substances 0.000 description 9
- 239000002184 metal Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 230000001681 protective effect Effects 0.000 description 6
- 238000005452 bending Methods 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 4
- 239000012790 adhesive layer Substances 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000014509 gene expression Effects 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 239000012780 transparent material Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000005394 sealing glass Substances 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 238000003848 UV Light-Curing Methods 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000012260 resinous material Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
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- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
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- H01L27/14601—Structural or functional details thereof
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- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
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- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/61—Noise processing, e.g. detecting, correcting, reducing or removing noise the noise originating only from the lens unit, e.g. flare, shading, vignetting or "cos4"
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- H01L2224/45001—Core members of the connector
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
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Abstract
【解決手段】固体撮像装置は、レンズにより取り込まれた光を光電変換するCMOSイメージセンサと、レンズからCMOSイメージセンサに入射する光の一部を遮光する遮光部材とを備え、遮光部材の縁面の、レンズの光軸方向に対してなす角度は、遮光部材の縁部に入射する光の入射角より大きく設計されている。本技術は、例えば、カメラ付き携帯電話機に搭載されるカメラモジュールに適用することができる。
【選択図】図4
Description
1.ワイヤボンディング構造の固体撮像装置
2.フリップチップ構造の固体撮像装置
3.キャビティレス化を図った固体撮像装置の例
4.金型による遮光部材の形成の例
[固体撮像装置の外観構成]
図2は、本技術を適用した固体撮像装置の一実施の形態の構成を示す図である。
ここで、図3乃至5を参照して、イメージセンサ10に対する遮光部材13の位置と、遮光部材13の開口部の縁面につけられる角度について説明する。なお、以下においては、遮光部材13の開口部の縁面を、適宜、単に、遮光部材13の縁面ということとする。
θL=arctan[tanθU+{(D−2σ)/G}] ・・・(1)
θM>arctan[tanθU+{(D−2σ)/G}] ・・・(2)
なお、以上においては、遮光部材13は、黒色に着色されたフィルムから形成されるものとしたが、他の材料から形成することもできる。
ここで、図6のフローチャートを参照して、印刷による遮光部材13の形成処理について説明する。
[従来のフリップチップ構造の固体撮像装置]
図8は、従来のフリップチップ構造の固体撮像装置の構成を示す図である。
図9は、本技術を適用したフリップチップ構造の固体撮像装置の一実施の形態の構成を示す図である。なお、図9は、図8の固体撮像装置において点線の四角枠で囲まれた部分に対応する部分の構成のみを示しており、図9の固体撮像装置において、図8の固体撮像装置と対応する部分については、同一の符号を付している。
[キャビティレス化されたワイヤボンディング構造の固体撮像装置]
図11は、キャビティレス化を図ったワイヤボンディング構造の固体撮像装置の構成を示す図である。なお、図11の固体撮像装置において、図3等の固体撮像装置と対応する部分においては、同一の符号を付している。
図13は、キャビティレス化を図ったフリップチップ構造の固体撮像装置の構成を示す図である。なお、図13の固体撮像装置において、図8または図9の固体撮像装置と対応する部分においては、同一の符号を付している。
上述したように、金型により大きな縁面角度を有する遮光部材を形成するのは困難であるので、遮光部材の開口部の縁部から所定の範囲を、イメージセンサ側に所定の角度で折り曲げることで、縁面角度を大きくする。
図15は、遮光部材の開口部の縁部から所定の範囲を、イメージセンサ側に所定の角度で折り曲げるようにした固体撮像装置の断面図である。
∠AOP≦(90°−θU)/2 ・・・(3)
∠QOP≦(90°−θU)/2+θU=(90°+θU)/2・・・(4)
γ≦[90°−arctan{(R−L)/2H}]/2 ・・・(5)
arctan{(R+L)/2H}≦θM ・・・(6)
次に、図19乃至図24を参照して、金型加工による、上述した遮光部材502の形成処理について説明する。図19は、金型加工による遮光部材形成処理について説明するフローチャートであり、図20乃至図24は、遮光部材形成処理において加工される遮光部材502等の断面図である。
(1) レンズにより取り込まれた光を光電変換する固体撮像素子と、
前記レンズから固体撮像素子に入射する光の一部を遮光する遮光部材と
を備え、
前記遮光部材の縁面の、前記レンズの光軸方向に対してなす角度は、前記遮光部材の縁部に入射する光の入射角より大きい
固体撮像装置。
(2) 前記遮光部材の縁面の、前記レンズの光軸方向に対してなす角度は、前記遮光部材の縁部に入射する光のうちの、入射角が最も大きい光の前記入射角より大きい
(1)に記載の固体撮像装置。
(3) 前記固体撮像素子の受光面の周縁部には、基板に接続される金線が接続されるパッドが設けられ、
前記パッドは、前記固体撮像素子上の、前記遮光部材の縁面の仮想延長面と交わる領域より受光面側には配置されない
(1)または(2)に記載の固体撮像装置。
(4) 前記固体撮像素子の受光面は、開口部を有する基板の前記開口部から入射される光を受光し、
前記開口部の縁面は、前記遮光部材の縁面の仮想延長面と交わらない
(1)または(2)に記載の固体撮像装置。
(5) 前記固体撮像素子の受光面上の空隙を封止する封止部材をさらに備え、
前記遮光部材は、前記封止部材の前記レンズ側の面または前記固体撮像素子側の面に設けられる
(3)または(4)に記載の固体撮像装置。
(6) 前記封止部材の側面は、前記遮光部材の縁面の仮想延長面と交わらない
(5)に記載の固体撮像装置。
(7) 前記遮光部材は、光路上に配置される光学フィルタに1回または複数回、印刷材料が印刷されることで形成される
(2)に記載の固体撮像装置。
Claims (7)
- レンズにより取り込まれた光を光電変換する固体撮像素子と、
前記レンズから固体撮像素子に入射する光の一部を遮光する遮光部材と
を備え、
前記遮光部材の縁面の、前記レンズの光軸方向に対してなす角度は、前記遮光部材の縁部に入射する光の入射角より大きい
固体撮像装置。 - 前記遮光部材の縁面の、前記レンズの光軸方向に対してなす角度は、前記遮光部材の縁部に入射する光のうちの、入射角が最も大きい光の前記入射角より大きい
請求項1に記載の固体撮像装置。 - 前記固体撮像素子の受光面の周縁部には、基板に接続される金線が接続されるパッドが設けられ、
前記パッドは、前記固体撮像素子上の、前記遮光部材の縁面の仮想延長面と交わる領域より受光面側には配置されない
請求項2に記載の固体撮像装置。 - 前記固体撮像素子の受光面は、開口部を有する基板の前記開口部から入射される光を受光し、
前記開口部の縁面は、前記遮光部材の縁面の仮想延長面と交わらない
請求項2に記載の固体撮像装置。 - 前記固体撮像素子の受光面上の空隙を封止する封止部材をさらに備え、
前記遮光部材は、前記封止部材の前記レンズ側の面または前記固体撮像素子側の面に設けられる
請求項2に記載の固体撮像装置。 - 前記封止部材の側面は、前記遮光部材の縁面の仮想延長面と交わらない
請求項5に記載の固体撮像装置。 - 前記遮光部材は、光路上に配置される光学フィルタに1回または複数回、印刷材料が印刷されることで形成される
請求項2に記載の固体撮像装置。
Priority Applications (24)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011105241A JP5930263B2 (ja) | 2011-02-18 | 2011-05-10 | 固体撮像装置 |
TW101101299A TWI467749B (zh) | 2011-02-18 | 2012-01-12 | 固態成像裝置 |
US13/357,883 US8786041B2 (en) | 2011-02-18 | 2012-01-25 | Solid-state imaging apparatus |
KR1020120013830A KR101959083B1 (ko) | 2011-02-18 | 2012-02-10 | 촬상 장치 및 전기 장치 |
CN201710223768.9A CN107256875B (zh) | 2011-02-18 | 2012-02-17 | 固态成像装置 |
CN201710223868.1A CN107240591B (zh) | 2011-02-18 | 2012-02-17 | 固态成像装置 |
CN201710229599.XA CN107275353B (zh) | 2011-02-18 | 2012-02-17 | 固态成像装置 |
CN201210035863.3A CN102646690B (zh) | 2011-02-18 | 2012-02-17 | 固态成像装置 |
CN201710223867.7A CN107482025B (zh) | 2011-02-18 | 2012-02-17 | 固态成像装置 |
US14/317,781 US9105541B2 (en) | 2011-02-18 | 2014-06-27 | Solid-state imaging apparatus |
US14/798,858 US9391106B2 (en) | 2011-02-18 | 2015-07-14 | Solid-state imaging apparatus |
US15/192,474 US9620543B2 (en) | 2011-02-18 | 2016-06-24 | Solid-state imaging apparatus |
US15/379,181 US9773826B2 (en) | 2011-02-18 | 2016-12-14 | Solid-state imaging apparatus |
US15/430,107 US9871069B2 (en) | 2011-02-18 | 2017-02-10 | Solid-state imaging apparatus |
US15/443,568 US9842872B2 (en) | 2011-02-18 | 2017-02-27 | Solid-state imaging apparatus |
US15/443,853 US9799692B2 (en) | 2011-02-18 | 2017-02-27 | Solid-state imaging apparatus |
US15/495,679 US9911776B2 (en) | 2011-02-18 | 2017-04-24 | Solid-state imaging apparatus |
US15/836,173 US9978794B2 (en) | 2011-02-18 | 2017-12-08 | Solid-state imaging apparatus |
US15/961,250 US10128290B2 (en) | 2011-02-18 | 2018-04-24 | Solid-state imaging apparatus |
US16/114,642 US10319763B2 (en) | 2011-02-18 | 2018-08-28 | Solid-state imaging apparatus |
US16/116,438 US10468446B2 (en) | 2011-02-18 | 2018-08-29 | Solid-state imaging apparatus |
KR1020190027757A KR102064109B1 (ko) | 2011-02-18 | 2019-03-11 | 촬상 장치 및 전기 장치 |
US16/592,626 US10868066B2 (en) | 2011-02-18 | 2019-10-03 | Solid-state imaging apparatus |
KR1020190178954A KR102157211B1 (ko) | 2011-02-18 | 2019-12-31 | 촬상 장치 및 전기 장치 |
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JP2011105241A JP5930263B2 (ja) | 2011-02-18 | 2011-05-10 | 固体撮像装置 |
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