CN1728396A - 图像捕捉设备 - Google Patents
图像捕捉设备 Download PDFInfo
- Publication number
- CN1728396A CN1728396A CNA2004101002157A CN200410100215A CN1728396A CN 1728396 A CN1728396 A CN 1728396A CN A2004101002157 A CNA2004101002157 A CN A2004101002157A CN 200410100215 A CN200410100215 A CN 200410100215A CN 1728396 A CN1728396 A CN 1728396A
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- transparent component
- image
- capturing apparatus
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- light
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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- H—ELECTRICITY
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
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Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004218913A JP4365743B2 (ja) | 2004-07-27 | 2004-07-27 | 撮像装置 |
JP2004218913 | 2004-07-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1728396A true CN1728396A (zh) | 2006-02-01 |
CN100466269C CN100466269C (zh) | 2009-03-04 |
Family
ID=35731685
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004101002157A Expired - Fee Related CN100466269C (zh) | 2004-07-27 | 2004-12-03 | 图像捕捉设备 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7616250B2 (zh) |
JP (1) | JP4365743B2 (zh) |
KR (2) | KR20060010686A (zh) |
CN (1) | CN100466269C (zh) |
TW (1) | TWI249344B (zh) |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
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US8013350B2 (en) | 2007-02-05 | 2011-09-06 | Panasonic Corporation | Optical device and method for manufacturing optical device, and camera module and endoscope module equipped with optical device |
CN102412256A (zh) * | 2011-10-28 | 2012-04-11 | 格科微电子(上海)有限公司 | 封装的图像传感器及形成方法、降低其眩光现象的方法 |
CN102483351A (zh) * | 2009-09-03 | 2012-05-30 | 浜松光子学株式会社 | 分光模块 |
CN101919057B (zh) * | 2008-01-22 | 2012-07-04 | 株式会社半导体能源研究所 | 半导体器件和制造半导体器件的方法 |
CN101241921B (zh) * | 2007-02-05 | 2012-07-11 | 松下电器产业株式会社 | 光学器件及其制造方法、以及摄像模块和内窥镜模块 |
CN103545267A (zh) * | 2012-07-12 | 2014-01-29 | 三星电子株式会社 | 半导体封装件及其制造方法 |
CN105097724A (zh) * | 2015-08-13 | 2015-11-25 | 苏州晶方半导体科技股份有限公司 | 封装结构及封装方法 |
WO2017024994A1 (zh) * | 2015-08-13 | 2017-02-16 | 苏州晶方半导体科技股份有限公司 | 封装结构及封装方法 |
CN107256875A (zh) * | 2011-02-18 | 2017-10-17 | 索尼公司 | 固态成像装置 |
CN107817548A (zh) * | 2013-07-09 | 2018-03-20 | 索尼公司 | 成像装置、成像设备和相机系统 |
CN110779563A (zh) * | 2018-07-26 | 2020-02-11 | 日月光半导体制造股份有限公司 | 光学设备 |
CN111052384A (zh) * | 2017-09-12 | 2020-04-21 | 索尼半导体解决方案公司 | 成像器件、成像器件的制造方法、成像装置和电子设备 |
US11960139B2 (en) | 2018-02-27 | 2024-04-16 | Sony Semiconductor Solutions Corporation | Camera module |
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US8953087B2 (en) * | 2004-04-08 | 2015-02-10 | Flir Systems Trading Belgium Bvba | Camera system and associated methods |
US20060197201A1 (en) * | 2005-02-23 | 2006-09-07 | Hsin Chung H | Image sensor structure |
JP2007142058A (ja) * | 2005-11-17 | 2007-06-07 | Matsushita Electric Ind Co Ltd | 半導体撮像素子およびその製造方法並びに半導体撮像装置とその製造方法 |
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US7936062B2 (en) | 2006-01-23 | 2011-05-03 | Tessera Technologies Ireland Limited | Wafer level chip packaging |
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JP4970845B2 (ja) * | 2006-05-16 | 2012-07-11 | ルネサスエレクトロニクス株式会社 | 固体撮像装置 |
US20080118241A1 (en) * | 2006-11-16 | 2008-05-22 | Tekolste Robert | Control of stray light in camera systems employing an optics stack and associated methods |
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JP5376961B2 (ja) * | 2008-02-01 | 2013-12-25 | 株式会社半導体エネルギー研究所 | 半導体装置 |
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JP2015099262A (ja) * | 2013-11-19 | 2015-05-28 | ソニー株式会社 | 固体撮像装置およびカメラモジュール、並びに電子機器 |
US9374538B2 (en) * | 2014-09-15 | 2016-06-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Image sensor with embedded infrared filter layer |
US9431442B2 (en) | 2015-02-02 | 2016-08-30 | Apple Inc. | Overmolded reconstructed camera module |
CN107533205A (zh) * | 2015-05-12 | 2018-01-02 | 奥林巴斯株式会社 | 摄像装置、内窥镜系统以及摄像装置的制造方法 |
US9973669B2 (en) | 2015-08-28 | 2018-05-15 | Apple Inc. | Dual overmolded reconstructed camera module |
US9850124B2 (en) * | 2015-10-27 | 2017-12-26 | Advanced Semiconductor Engineering, Inc. | Semiconductor device package for reducing parasitic light and method of manufacturing the same |
JP6989383B2 (ja) * | 2015-11-05 | 2022-01-05 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置、半導体装置の製造方法、及び、電子機器 |
KR102472566B1 (ko) | 2015-12-01 | 2022-12-01 | 삼성전자주식회사 | 반도체 패키지 |
KR20170082358A (ko) * | 2016-01-06 | 2017-07-14 | 하나 마이크론(주) | 스마트 기기의 트랙패드 반도체 패키지 및 그 제조 방법 |
JP2017130610A (ja) * | 2016-01-22 | 2017-07-27 | ソニー株式会社 | イメージセンサ、製造方法、及び、電子機器 |
KR102193819B1 (ko) * | 2016-03-12 | 2020-12-23 | 닝보 써니 오포테크 코., 엘티디. | 어레이 이미징 모듈, 성형 감광성 어셈블리 및 그 제조 방법, 및 전자 장치 |
US10750060B2 (en) * | 2016-03-31 | 2020-08-18 | Sony Corporation | Camera module, method of manufacturing camera module, imaging apparatus, and electronic apparatus |
JP6711706B2 (ja) * | 2016-06-24 | 2020-06-17 | 京セラ株式会社 | 蓋体、撮像素子収納用パッケージおよび撮像装置 |
US20180090524A1 (en) * | 2016-09-26 | 2018-03-29 | China Water Level CSP Co., Ltd. | Image sensor package and method of packaging the same |
CN106449546B (zh) * | 2016-09-26 | 2019-12-20 | 苏州晶方半导体科技股份有限公司 | 影像传感芯片封装结构及其封装方法 |
US20210041650A1 (en) * | 2018-03-07 | 2021-02-11 | Ams Sensors Singapore Pte. Ltd. | Optoelectronic modules and wafer-level methods for manufacturing the same |
FR3084207B1 (fr) * | 2018-07-19 | 2021-02-19 | Isorg | Systeme optique et son procede de fabrication |
JP2020036216A (ja) * | 2018-08-30 | 2020-03-05 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置及び固体撮像装置の製造方法 |
US11462580B2 (en) * | 2019-06-27 | 2022-10-04 | Semiconductor Components Industries, Llc | Image sensor packages and related methods |
US11556047B2 (en) * | 2019-08-16 | 2023-01-17 | Tdk Taiwan Corp. | Optical member driving mechanism including matrix structure that corresponds to noise |
US11437292B2 (en) * | 2019-10-11 | 2022-09-06 | Advanced Semiconductor Engineering, Inc. | Semiconductor package device and method of manufacturing the same |
US11515347B2 (en) * | 2020-01-20 | 2022-11-29 | Omnivision Technologies, Inc. | Dam of image sensor module having sawtooth pattern and inclined surface on its inner wall and method of making same |
US11908755B2 (en) * | 2020-02-21 | 2024-02-20 | Amkor Technology Singapore Holding Pte. Ltd. | Semiconductor devices and methods of manufacturing semiconductor devices |
TWI721837B (zh) * | 2020-03-26 | 2021-03-11 | 勝麗國際股份有限公司 | 感測器封裝結構 |
JP2024075806A (ja) * | 2021-03-30 | 2024-06-05 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58150145A (ja) * | 1982-03-03 | 1983-09-06 | Toshiba Corp | 光学式デジタルデイスクプレ−ヤのトラツキング制御回路 |
US4521469A (en) * | 1982-11-22 | 1985-06-04 | Olin Corporation | Casing for electronic components |
JPS6267863A (ja) | 1985-09-20 | 1987-03-27 | Toshiba Corp | 固体撮像装置 |
JPS63271969A (ja) | 1987-04-29 | 1988-11-09 | Olympus Optical Co Ltd | 固体撮像素子 |
JPH02267957A (ja) * | 1989-04-07 | 1990-11-01 | Nec Corp | 集積回路チップケース |
JPH0423469A (ja) | 1990-05-18 | 1992-01-27 | Toshiba Corp | 固体撮像素子モジュール |
JPH04309060A (ja) | 1991-04-05 | 1992-10-30 | Fuji Xerox Co Ltd | 密着型イメ−ジセンサ |
JPH0575934A (ja) | 1991-09-13 | 1993-03-26 | Toshiba Corp | Ccd撮像デバイスモジユール |
JP2987455B2 (ja) | 1991-10-17 | 1999-12-06 | オリンパス光学工業株式会社 | 固体撮像装置 |
JPH05136384A (ja) | 1991-11-13 | 1993-06-01 | Toshiba Corp | 固体撮像モジユール |
JPH08243078A (ja) * | 1995-03-07 | 1996-09-24 | Fuji Photo Optical Co Ltd | 電子内視鏡の撮像素子組付け体 |
US5763200A (en) * | 1995-05-12 | 1998-06-09 | Biomeasure, Incorporated | Inhibition of amylin release |
US5949655A (en) * | 1997-09-09 | 1999-09-07 | Amkor Technology, Inc. | Mounting having an aperture cover with adhesive locking feature for flip chip optical integrated circuit device |
IL123207A0 (en) | 1998-02-06 | 1998-09-24 | Shellcase Ltd | Integrated circuit device |
JP2000323692A (ja) | 1999-05-07 | 2000-11-24 | Canon Inc | 固体撮像装置 |
US6221687B1 (en) * | 1999-12-23 | 2001-04-24 | Tower Semiconductor Ltd. | Color image sensor with embedded microlens array |
US6515269B1 (en) * | 2000-01-25 | 2003-02-04 | Amkor Technology, Inc. | Integrally connected image sensor packages having a window support in contact with a window and the active area |
US6492699B1 (en) * | 2000-05-22 | 2002-12-10 | Amkor Technology, Inc. | Image sensor package having sealed cavity over active area |
JP4313503B2 (ja) | 2000-06-29 | 2009-08-12 | 京セラ株式会社 | 半導体装置 |
JP2002270859A (ja) | 2000-11-27 | 2002-09-20 | Mitsui Chemicals Inc | 光電素子用パッケージおよびその製造方法 |
JP2002329850A (ja) | 2001-05-01 | 2002-11-15 | Canon Inc | チップサイズパッケージおよびその製造方法 |
US6906403B2 (en) * | 2002-06-04 | 2005-06-14 | Micron Technology, Inc. | Sealed electronic device packages with transparent coverings |
US7002241B1 (en) * | 2003-02-12 | 2006-02-21 | National Semiconductor Corporation | Packaging of semiconductor device with a non-opaque cover |
KR20060059873A (ko) * | 2003-08-22 | 2006-06-02 | 코니카 미놀타 옵토 인코포레이티드 | 고체 촬상 장치 및 상기 고체 촬상 장치를 구비한 촬상장치 및 고체 촬상 장치의 마이크로렌즈 어레이 제조 방법 |
-
2004
- 2004-07-27 JP JP2004218913A patent/JP4365743B2/ja not_active Expired - Fee Related
- 2004-11-23 US US10/994,634 patent/US7616250B2/en not_active Expired - Fee Related
- 2004-11-24 TW TW093136142A patent/TWI249344B/zh not_active IP Right Cessation
- 2004-11-26 KR KR1020040097841A patent/KR20060010686A/ko not_active IP Right Cessation
- 2004-12-03 CN CNB2004101002157A patent/CN100466269C/zh not_active Expired - Fee Related
-
2007
- 2007-03-12 KR KR1020070023927A patent/KR100858457B1/ko active IP Right Grant
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101241921B (zh) * | 2007-02-05 | 2012-07-11 | 松下电器产业株式会社 | 光学器件及其制造方法、以及摄像模块和内窥镜模块 |
US8455902B2 (en) | 2007-02-05 | 2013-06-04 | Panasonic Corporation | Optical device and method for manufacturing optical device, and camera module and endoscope module equipped with optical device |
US8013350B2 (en) | 2007-02-05 | 2011-09-06 | Panasonic Corporation | Optical device and method for manufacturing optical device, and camera module and endoscope module equipped with optical device |
CN101919057B (zh) * | 2008-01-22 | 2012-07-04 | 株式会社半导体能源研究所 | 半导体器件和制造半导体器件的方法 |
CN102483351A (zh) * | 2009-09-03 | 2012-05-30 | 浜松光子学株式会社 | 分光模块 |
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TW200605652A (en) | 2006-02-01 |
US7616250B2 (en) | 2009-11-10 |
KR20060010686A (ko) | 2006-02-02 |
US20060023108A1 (en) | 2006-02-02 |
JP4365743B2 (ja) | 2009-11-18 |
KR100858457B1 (ko) | 2008-09-16 |
KR20070046041A (ko) | 2007-05-02 |
TWI249344B (en) | 2006-02-11 |
CN100466269C (zh) | 2009-03-04 |
JP2006041183A (ja) | 2006-02-09 |
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