JP2009177160A - 半導体装置及び半導体装置の作製方法 - Google Patents
半導体装置及び半導体装置の作製方法 Download PDFInfo
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- JP2009177160A JP2009177160A JP2008327350A JP2008327350A JP2009177160A JP 2009177160 A JP2009177160 A JP 2009177160A JP 2008327350 A JP2008327350 A JP 2008327350A JP 2008327350 A JP2008327350 A JP 2008327350A JP 2009177160 A JP2009177160 A JP 2009177160A
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
【解決手段】基板の第1の面に半導体素子が設けられ、基板の第1の面とは反対の第2の面と、基板の側面の一部と、に樹脂層を有し、基板の側面に段差を有し、基板の幅寸法は、段差よりも先の部分が小さい。よって、基板の断面は、凸字形状ともいえる。
【選択図】図6
Description
本実施の形態では、半導体素子が形成された基板の分断方法を、図1(A)〜図1(D)、図2(A)〜図2(C)、図3(A)〜図3(B)、図4(A)〜図4(B)、図5(A)〜図5(D)、及び図6(A)〜図6(C)を用いて説明する。ここでは前記半導体素子として光電変換回路の作製された基板を例に挙げる。
実施の形態1で説明したnチャネル型トランジスタ及びpチャネル型トランジスタとして、様々な形態の電界効果トランジスタを用いることが出来る。よって、用いるトランジスタの種類に限定はない。例えば、非晶質シリコン、多結晶シリコン、微結晶シリコンなどに代表される非単結晶半導体膜を有する薄膜トランジスタ(TFT)などを用いることが出来る。TFTを用いる場合、様々なメリットがある。例えば、単結晶シリコンの場合よりも低い温度で製造できるため、製造コストの削減、又は製造装置の大型化を図ることができる。製造装置を大きくできるため、大型基板上に製造できる。そのため、同時に多くの個数の光電変換装置を製造できるため、低コストで製造できる。さらに、製造温度が低いため、耐熱性の弱い基板を用いることができる。そのため、透光性基板上にトランジスタを製造できる。そして、透光性基板上のトランジスタを用いて光電変換素子での光の透過を制御することが出来る。
本実施の形態では、本発明の光電変換装置に筐体を形成して光の入射する方向を制御した例を、図7及び図8を用いて説明する。
本実施の形態では、本発明により得られた光電変換装置を様々な電子機器に組み込んだ例について説明する。本発明が適用される電子機器として、コンピュータ、ディスプレイ、携帯電話、テレビなどが挙げられる。それらの電子機器の具体例を図9、図10(A)、図10(B)、図11(A)、図11(B)、図12、図13(A)及び図13(B)に示す。
本実施の形態では、カラーセンサとして機能する半導体装置にブラックマトリクスやカラーフィルタなどを有する基板を設ける構成例を、図16を用いて説明する。
Claims (16)
- 基板の第1の面に半導体素子が設けられ、
前記基板の前記第1の面とは反対の第2の面と、前記基板の側面の一部と、に樹脂層を有することを特徴とする半導体装置。 - 請求項1において、前記基板の断面は凸字形状であることを特徴とする半導体装置。
- 基板の第1の面に半導体素子が設けられ、
前記基板の前記第1の面とは反対の第2の面と、前記基板の側面の一部と、に樹脂層を有し、
前記基板は断面において、台形状であり、前記台形状の側面が階段形状を有し、
前記基板は、前記階段形状の上段の厚さが前記階段形状の下段の厚さより厚いことを特徴とする半導体装置。 - 請求項3において、前記上段は前記下段に向かって湾曲していることを特徴とする半導体装置。
- 請求項1乃至4のいずれか一項において、
前記樹脂層が接している前記基板の側面は、裾広がりの曲面を有することを特徴とする半導体装置。 - 請求項1乃至5のいずれか一項において、
前記基板の第1の面及び前記基板の第2の面は四角形であり、前記基板の第2の面の面積の方が前記基板の第1の面の面積より大きいことを特徴とする半導体装置。 - 請求項1乃至6のいずれか一項において、
前記半導体素子は光電変換素子と、前記光電変換素子の出力を増幅する増幅回路が設けられた光電変換装置を有し、
前記光電変換素子はp型半導体層と、i型半導体層と、n型半導体層とが積層された構造を有することを特徴とする半導体装置。 - 請求項1乃至7のいずれか一項において、
前記基板は透光性であることを特徴とする半導体装置。 - 請求項1乃至8のいずれか一項において、
前記樹脂層は透光性であることを特徴とする半導体装置。 - 請求項1乃至8のいずれか一項において、
前記基板は透光性であり、
前記樹脂層は、緑色の光を通す材料からなることを特徴とする半導体装置。 - 請求項1乃至8のいずれか一項において、
前記基板は透光性であり、
前記樹脂層は、青色の光を通す材料からなることを特徴とする半導体装置。 - 請求項1乃至8のいずれか一項において、
前記基板は透光性であり、
前記樹脂層は、赤色の光を通す材料からなることを特徴とする半導体装置。 - 基板の第1の面に半導体素子を形成する工程と、
前記第1の面とは反対側の第2の面の前記基板の厚さを薄くする工程と、
前記基板の第2の面に、溝を設ける工程と、
前記第2の面に樹脂層を設ける工程と、
前記基板を分断する工程と、を有し、
前記溝を設ける工程にて形成される溝の幅は、前記基板を分断する工程にて、前記基板を分断するときの切削痕の幅より広いことを特徴とする半導体装置の作製方法。 - 請求項13において、
前記溝を設ける工程と、前記基板を分断する工程と、において、厚みが異なるダイシングブレードを用いることを特徴とする半導体装置の作製方法。 - 請求項13または請求項14において、
前記基板の厚さを薄くする工程と、前記基板に溝を設ける工程と、前記基板を分断する工程と、において、前記基板をダイシングテープで固定して行うことを特徴とする半導体装置の作製方法。 - 請求項13乃至15のいずれか一項において、
前記基板を分断する工程では、前記基板に形成されたマーカを検出し、前記基板の位置を確認しながら、前記溝の内側を切削し分断することを特徴とする半導体装置の作製方法。
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JP2007194469A (ja) * | 2006-01-20 | 2007-08-02 | Renesas Technology Corp | 半導体装置の製造方法 |
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KR20150024492A (ko) * | 2013-08-26 | 2015-03-09 | 삼성전자주식회사 | 정전용량 미세가공 초음파 변환기 및 그 싱귤레이션 방법 |
KR102149332B1 (ko) | 2013-08-26 | 2020-08-31 | 삼성전자주식회사 | 정전용량 미세가공 초음파 변환기 및 그 싱귤레이션 방법 |
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JP2014241415A (ja) | 2014-12-25 |
US8999818B2 (en) | 2015-04-07 |
JP5844858B2 (ja) | 2016-01-20 |
JP5581428B2 (ja) | 2014-08-27 |
CN101471351B (zh) | 2013-09-25 |
CN101471351A (zh) | 2009-07-01 |
US20090174023A1 (en) | 2009-07-09 |
TWI496276B (zh) | 2015-08-11 |
EP2075840A3 (en) | 2011-03-09 |
TW200941715A (en) | 2009-10-01 |
EP2075840B1 (en) | 2014-08-27 |
JP2013254969A (ja) | 2013-12-19 |
EP2075840A2 (en) | 2009-07-01 |
KR20090073031A (ko) | 2009-07-02 |
JP5325567B2 (ja) | 2013-10-23 |
KR101611161B1 (ko) | 2016-04-11 |
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