JP2007335607A - Icチップ実装パッケージ、及びこれを用いた画像表示装置 - Google Patents
Icチップ実装パッケージ、及びこれを用いた画像表示装置 Download PDFInfo
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- JP2007335607A JP2007335607A JP2006165257A JP2006165257A JP2007335607A JP 2007335607 A JP2007335607 A JP 2007335607A JP 2006165257 A JP2006165257 A JP 2006165257A JP 2006165257 A JP2006165257 A JP 2006165257A JP 2007335607 A JP2007335607 A JP 2007335607A
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- liquid crystal
- interposer substrate
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- 239000000758 substrate Substances 0.000 claims abstract description 243
- 239000000463 material Substances 0.000 claims abstract description 31
- 239000000853 adhesive Substances 0.000 claims abstract description 13
- 230000001070 adhesive effect Effects 0.000 claims abstract description 13
- 239000004020 conductor Substances 0.000 claims description 28
- 239000011347 resin Substances 0.000 claims description 22
- 229920005989 resin Polymers 0.000 claims description 22
- 239000004065 semiconductor Substances 0.000 claims description 15
- 239000002245 particle Substances 0.000 claims description 11
- 229920001187 thermosetting polymer Polymers 0.000 claims description 10
- 230000035699 permeability Effects 0.000 claims description 4
- 239000004973 liquid crystal related substance Substances 0.000 abstract description 205
- 239000010408 film Substances 0.000 description 110
- 238000000034 method Methods 0.000 description 40
- 239000011295 pitch Substances 0.000 description 38
- 230000008569 process Effects 0.000 description 28
- 238000004519 manufacturing process Methods 0.000 description 17
- 230000002093 peripheral effect Effects 0.000 description 14
- 238000007789 sealing Methods 0.000 description 13
- 239000011810 insulating material Substances 0.000 description 11
- 239000000565 sealant Substances 0.000 description 10
- 239000011521 glass Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000005520 cutting process Methods 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000005856 abnormality Effects 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 4
- 230000006378 damage Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 208000013586 Complex regional pain syndrome type 1 Diseases 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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Abstract
【解決手段】本発明の一実施形態である液晶ドライバ実装パッケージ1aは、インターポーザー基板4aを介してフィルム基材2と液晶ドライバ3とが接続している。インターポーザー基板4aのフィルム基材接続用端子13と、フィルム基材2のフィルム上配線5・6の端子とは、異方性導電接着材を用いて接続されている。インターポーザー基板4aの端部及びその周辺部には絶縁膜7が形成されており、フィルム上配線5・6がこの絶縁膜7と接触した際、隣接フィルム上配線間での短絡が起こらない。
【選択図】図2
Description
本発明に係る液晶ドライバ実装パッケージ(ICチップ実装パッケージ)についての一実施形態を説明する。なお、以下の説明では、本発明を実施するために技術的に好ましい種々の限定が付されているが、本発明の範囲が以下の実施形態および図面に限定されるものではない。
本発明にかかる他の実施の形態について、図17に基づいて説明すれば以下の通りである。なお、本実施の形態では、上記実施の形態1との相違点について説明するため、説明の便宜上、実施の形態1で説明した部材と同一の機能を有する部材には同一の部材番号を付し、その説明を省略する。
2 フィルム基材(テープキャリア)
3,3’ 液晶ドライバ(ICチップ)
3a 駆動信号出力用端子(出入力端子群)
3b 信号入力用端子(出入力端子群)
4a,4b,4c インターポーザー基板
5 フィルム上配線
6 フィルム上配線
7 絶縁膜
8 デバイスホール
9,9’ 封止剤
10,11 バンプ
12 液晶ドライバ接続用端子(ICチップ側接続端子群)
13 フィルム基材接続用端子(テープキャリア側接続端子)
14 基板上配線(基板上配線導体)
14’ 多層配線
15 ソルダーレジスト
16 電源回路(電源素子)
17 出力駆動バッファー(出力バッファー素子)
18 冗長用バッファー(冗長バッファー素子)
19 共通電源配線
30 共通接地配線
31 保護素子
32 液晶ドライバ(ICチップ)用ウエハ
33 インターポーザーウエハ
34 ダイシングブレード
35 載置台
36 溝
40 液晶ドライバ実装インターポーザー基板
51 液晶ドライバ実装表示装置(画像表示装置)
52 液晶表示手段(画像表示体)
Claims (10)
- ICチップと、
ICチップ側接続端子及びテープキャリア側接続端子を有する配線導体が設けられたインターポーザー基板と、
上記テープキャリア側接続端子と導電接続するインターポーザー基板側接続端子を有する配線導体が設けられたテープキャリアとを備えたICチップ実装パッケージであって、
上記テープキャリア側接続端子と上記インターポーザー基板側接続端子とは異方性導電接着材を介して導電接続されており、
上記インターポーザー基板の端部に絶縁部を有していることを特徴とするICチップ実装パッケージ。 - 上記テープキャリアは、可撓性を有する材料からなることを特徴とする請求項1に記載のICチップ実装パッケージ。
- 上記絶縁部は、上記インターポーザー基板の表面で、上記テープキャリアの配線導体と対向している領域に配置されていることを特徴とする請求項1または2に記載のICチップ実装パッケージ。
- 上記絶縁部として絶縁膜が設けられていることを特徴とする請求項1から3の何れか1項に記載のICチップ実装パッケージ。
- 上記インターポーザー基板が絶縁性基板からなることを特徴とする請求項1から3に記載のICチップ実装パッケージ。
- 上記インターポーザー基板が可視光透過性を有する材料からなることを特徴とする請求項1から5の何れか1項に記載のICチップ実装パッケージ。
- 上記異方性導電接着材は、導電性粒子が混入された熱硬化性樹脂がフィルム状に形成された異方性導電フィルム、もしくは導電性粒子がペースト状の熱硬化性樹脂に混入された異方性導電ペーストであることを特徴とする請求項1から6の何れか1項に記載のICチップ実装パッケージ。
- ICチップと、
ICチップ側接続端子及びテープキャリア側接続端子を有する配線導体が設けられたインターポーザー基板と、
上記テープキャリア側接続端子と導電接続するインターポーザー基板側接続端子を有する配線導体が設けられたテープキャリアとを備えたICチップ実装パッケージであって、
上記インターポーザー基板は半導体基板からなり、
上記インターポーザー基板の端部に絶縁部を有していることを特徴とするICチップ実装パッケージ。 - 上記ICチップが、電気信号によって動作する画像表示体を駆動するためのドライバICであることを特徴とする請求項1から8の何れか1項に記載のICチップ実装パッケージ。
- 請求項9に記載のICチップ実装パッケージと、電気信号によって動作する画像表示体とを備えたことを特徴とする画像表示装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006165257A JP2007335607A (ja) | 2006-06-14 | 2006-06-14 | Icチップ実装パッケージ、及びこれを用いた画像表示装置 |
TW096120569A TW200814244A (en) | 2006-06-14 | 2007-06-07 | IC chip package, and image display apparatus using same |
CNA2007101103433A CN101090101A (zh) | 2006-06-14 | 2007-06-13 | Ic芯片封装和使用该ic芯片封装的图像显示装置 |
KR1020070057800A KR20070119530A (ko) | 2006-06-14 | 2007-06-13 | Ic 칩 실장 패키지, 및 이것을 사용한 화상 표시 장치 |
US11/808,834 US20070290302A1 (en) | 2006-06-14 | 2007-06-13 | IC chip package, and image display apparatus using same |
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JP2006165257A JP2007335607A (ja) | 2006-06-14 | 2006-06-14 | Icチップ実装パッケージ、及びこれを用いた画像表示装置 |
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JP2007335607A true JP2007335607A (ja) | 2007-12-27 |
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JP2006165257A Pending JP2007335607A (ja) | 2006-06-14 | 2006-06-14 | Icチップ実装パッケージ、及びこれを用いた画像表示装置 |
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US (1) | US20070290302A1 (ja) |
JP (1) | JP2007335607A (ja) |
KR (1) | KR20070119530A (ja) |
CN (1) | CN101090101A (ja) |
TW (1) | TW200814244A (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010212396A (ja) * | 2009-03-10 | 2010-09-24 | Seiko Epson Corp | 電子装置、電気光学装置および基板の接続構造 |
WO2016190197A1 (ja) * | 2015-05-22 | 2016-12-01 | シャープ株式会社 | 半導体装置 |
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KR101134168B1 (ko) * | 2005-08-24 | 2012-04-09 | 삼성전자주식회사 | 반도체 칩 및 그 제조 방법과, 그를 이용한 표시 패널 및그 제조 방법 |
JP4116055B2 (ja) * | 2006-12-04 | 2008-07-09 | シャープ株式会社 | 半導体装置 |
JP4430062B2 (ja) * | 2006-12-06 | 2010-03-10 | シャープ株式会社 | Icチップ実装パッケージの製造方法 |
JP4143666B2 (ja) * | 2006-12-08 | 2008-09-03 | シャープ株式会社 | Icチップ実装パッケージ、及びこれを備えた画像表示装置 |
JP4219953B2 (ja) * | 2006-12-11 | 2009-02-04 | シャープ株式会社 | Icチップ実装パッケージ、およびその製造方法 |
JP5051836B2 (ja) * | 2007-09-28 | 2012-10-17 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその設計方法 |
JP5518381B2 (ja) * | 2008-07-10 | 2014-06-11 | 株式会社半導体エネルギー研究所 | カラーセンサ及び当該カラーセンサを具備する電子機器 |
KR101297192B1 (ko) * | 2008-11-10 | 2013-08-19 | 삼성전자주식회사 | 화상형성장치, 칩, 및, 칩 패키지 |
KR101030991B1 (ko) * | 2008-12-31 | 2011-04-22 | 삼성에스디아이 주식회사 | 반도체 패키지의 장착구조 및 이를 적용한 플라즈마 디스플레이 장치 |
EP2204848A1 (en) * | 2008-12-31 | 2010-07-07 | Samsung SDI Co., Ltd. | Semiconductor Package and Plasma Display Device including the same |
KR101030990B1 (ko) * | 2008-12-31 | 2011-04-22 | 삼성에스디아이 주식회사 | 반도체 패키지 및 이를 구비하는 플라즈마 디스플레이 장치 |
TWI384603B (zh) * | 2009-02-17 | 2013-02-01 | Advanced Semiconductor Eng | 基板結構及應用其之封裝結構 |
JP5270497B2 (ja) * | 2009-09-02 | 2013-08-21 | シャープ株式会社 | 半導体装置およびその電力供給方法 |
US8982574B2 (en) * | 2010-12-29 | 2015-03-17 | Stmicroelectronics S.R.L. | Contact and contactless differential I/O pads for chip-to-chip communication and wireless probing |
TWI457890B (zh) * | 2012-08-17 | 2014-10-21 | Macroblock Inc | Display structure and display |
KR20180064583A (ko) * | 2016-12-05 | 2018-06-15 | 삼성디스플레이 주식회사 | 칩 온 필름 패키지 및 이를 포함하는 표시 장치 |
JP7016147B2 (ja) | 2017-11-29 | 2022-02-04 | 深▲セン▼通鋭微電子技術有限公司 | チップオンフィルム型半導体装置 |
CN109036171B (zh) * | 2018-07-10 | 2021-01-26 | 中航华东光电有限公司 | 液晶屏信号转接带密封方法 |
JP7185502B2 (ja) * | 2018-11-16 | 2022-12-07 | ローム株式会社 | 半導体装置、表示ドライバ及び表示装置 |
TWI696944B (zh) * | 2019-05-08 | 2020-06-21 | 英屬開曼群島商敦泰電子有限公司 | 顯示觸控驅動晶片 |
-
2006
- 2006-06-14 JP JP2006165257A patent/JP2007335607A/ja active Pending
-
2007
- 2007-06-07 TW TW096120569A patent/TW200814244A/zh unknown
- 2007-06-13 KR KR1020070057800A patent/KR20070119530A/ko not_active Application Discontinuation
- 2007-06-13 US US11/808,834 patent/US20070290302A1/en not_active Abandoned
- 2007-06-13 CN CNA2007101103433A patent/CN101090101A/zh active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010212396A (ja) * | 2009-03-10 | 2010-09-24 | Seiko Epson Corp | 電子装置、電気光学装置および基板の接続構造 |
WO2016190197A1 (ja) * | 2015-05-22 | 2016-12-01 | シャープ株式会社 | 半導体装置 |
US10224305B2 (en) | 2015-05-22 | 2019-03-05 | Sharp Kabushiki Kaisha | Semiconductor device |
Also Published As
Publication number | Publication date |
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KR20070119530A (ko) | 2007-12-20 |
TW200814244A (en) | 2008-03-16 |
CN101090101A (zh) | 2007-12-19 |
US20070290302A1 (en) | 2007-12-20 |
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