TWI331803B - A single-shot semiconductor processing system and method having various irradiation patterns - Google Patents
A single-shot semiconductor processing system and method having various irradiation patterns Download PDFInfo
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- TWI331803B TWI331803B TW092122790A TW92122790A TWI331803B TW I331803 B TWI331803 B TW I331803B TW 092122790 A TW092122790 A TW 092122790A TW 92122790 A TW92122790 A TW 92122790A TW I331803 B TWI331803 B TW I331803B
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02678—Beam shaping, e.g. using a mask
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02686—Pulsed laser beam
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1296—Multistep manufacturing methods adapted to increase the uniformity of device parameters
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
- Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details
Description
ϊ'331803 九、發明說明: 【發明所屬之技術領域】 本發明係關於半導體製 ^ „七 眾杈万忐特疋$之,係關於形成 適於製造薄膜電晶體(TFT)F f i)裝置之半導體材料的方法。 【先前技術】 :板…與其它顯示單元係作為—般電子裝置與設 備?…、影像感測器與電視幻之視覺影像介面。顯 不盗可藉由如液晶薄膜以及 及玻璃基板與塑膠基板上之半導 體材料而製得。每一顯示s 守 器係由液日日層内圖像元件(像素) 之栅極(或矩陣)所組成。 、 一# 許多個像素一同在顯示器上建立 —個影像。製作於半導體材 疋件’以個別轉換每一僮去 $關 以形成TFT之半導體材料 、队態用 ' 般為非晶發或多晶欲速 類薄膜在考量到所使用 、。此 ^ .β ^ ^ 基板材枓(如玻璃或塑膠)的低熔 融 >瓜度下,而以相對低的 &熔 積於基板上。此相對低的,一 次化學製程沉 邗對低的沉積溫度降低已沉積矽薄膜 晶性並使得該薄膜形成為 、之結 u取马非晶系或多晶系薄膜。 然而’製造於矽薄膜内TFT之元件特性, 薄膜非結晶性的增加而降 ‘隨著發 工業應用性,極需且右_此从 疋件的 基板上之矽薄膜的結晶性 民恤 4猎由雷射回火而改善。如,
Maegawa等人所提之美 ^ ^ ^ 專利第5,766,989號係描述利 激光雷射回火(ELA)處理在俏,丁. 』用 在低溫下沉積之非晶矽薄膜,而 5 1-331803 轉變為可用於LCD應用之多晶矽薄膜。然而,就工 而言,已回火薄膜之晶粒尺寸並非足夠地均一,故傳 製程無法完全滿足此項需求。已回火薄膜非均一的 寸,與ELA製程中用以掃瞄薄膜之雷射光束的光束 關。
Im等人所提之美國專利第6,573,531號與Im所 國第6,322,625號(之後分別簡稱為53 1專利與625 係描述雷射回火設備與用以形成大晶粒多晶碎結構 矽結構之改善製程,此兩全文在此係併入本文之參 中。該些專利所描述之雷射回火製程,係關於針對 射光束幅照而融化之薄膜,其目標部分經控制的再 薄膜可為金屬或半導體材料(如矽)。調整入射於矽 之一組雷射光束脈衝量,以控制矽薄膜目標部分 量。而後,在入射雷射光束脈衝期間,藉由該矽薄 的物理轉移而偏移目標部分的定位,以促使磊晶 化。此稱為橫向固化之製程,有助於使最初熔融之 分的結晶結構成長為大尺寸晶粒。此製程設備包含 射、光束量調整器、光束聚焦光學儀、圖案罩幕、 傳送座,其中馬達傳送座係在雷射光束幅照期間移 膜(參閱專利531之第1圖,其並於此複製)。 現將納入以上考量點,進一步改善用於半導體薄 射回火製程,特別是用於薄膜再結晶之雷射回火製 發明主要關注於改善回火製程並增進設備產量(如 示器之生產量)之設備與製程技術。 業用途 統ELA 晶粒尺 形狀相 提之美 專利), 或單晶 考文獻 藉由雷 固化。 薄膜上 之熔融 膜些微 橫向固 目標部 激光雷 與馬達 動該薄 膜之雷 程。本 平板顯 【發明内容】 本發明提供用以再結晶非晶系或多晶系半導體薄骐之 方法與系統,以增進其之結晶品質,進而使其更適合於元 件應用。設計系統與製程係經設計,以快速地製造大面積 區域半導體薄膜❶ 半導體薄膜上之目標區域(target area)可用於全部或部 刀半導趙元件結構。如,目標區域可作為半導趙元件之主 動區域。藉由雷射光束幅照處理目標區域以再結晶該些區 域。暴露目標區域於足夠強度或光量之雷射光束中,以在 該目標區域内熔融半導體材料。可使用單發雷射光束曝光 〜當雷射光束關閉或自目標區域移除時,已熔融之半導體 材料會再結晶。 半導體薄膜表面上一區域内之多數目標區域,可同時以 圖案化之雷射輻射進行處理。玎展開投射罩幕以適用於圖 案化雷射光束。罩幕將入射雷射光束分為數個子光束,而 數個子光束入射於半導體薄膜表面區域中相應數目的目標 區域上。每一子光束具有足以熔融其(子光束)所入射之目 標區域内半導體材料的光量。子光束大小可考慮目標區域 所需尺寸’以及可達到有效再結晶之半導體材料含量而決 疋。一般子光束大小以及相對應目標區域大小可約為〇.5 微米至數微米的尺寸等級。 圖案化雷射光束輻射之示範罩幕具有數個彼此平行之 矩形狹缝。使用此罩幕,可將入射雷射光束分為數個平行 7 1331803 的子光束。對應於該些子光束之目標區域係以相似的平 圖案分散在表面區域内。另一示範罩幕具有數個矩形 縫’該些狹縫設置於數組平行且正交之狹缝的矩形圖 中。如’狹缝可沿著方形側邊成對地棑列。使用此罩幕 所產生的輻射子光束與對應目標區域也分散於相似矩形 案中(如多組平行與正交之目標區域)。 雷射光束可遍佈半導體薄膜表面掃瞄或步進,進而以 標區域之一重複圖案成功地處理表面的全部區域。相 地’半導體薄膜可相對於用於相同目的之定向雷射光束 移動。本發明之一實施例中’馬達線性傳送座在線性X 路徑上’相對於雷射光束移動半導體薄膜,以致半導體 膜全部表面區域可暴露於雷射光束幅照。在製程期間, 送座的移動方式可持續橫越半導體薄膜之寬度,或可由 區域步進至下一區域。在某些元件應用中,一區域範圍 之目標區域可鄰近於下一區域範圍内之目標區域,以再 晶半導體材料之延伸帶。已熔融之目標區域接續地橫向 化有助於相鄰目標區域之再結晶。在其它元件應用中, 標區域可幾何地與鄰接範圍内之目標區域分離。 為了用於目標區域輻射而產生之雷射光束脈衝可與 性傳送座同步移動,以致雷射光束可以幾何精確地入射 選定的目標區域上。產生雷射光束脈衝的時間可編排入 樓半導體薄膜之傳送座的位置。而索引(indexing)可為回 即時指出座之位置的位置感測器而產生,或以覆於薄膜 導體上之幾何網格的計算座標為基礎。 行 狹 案 圖 S 反 而 -Y 薄 傳 内 結 固 § 線 於 支 應 半 8 1331803 【實施方式】 本發明藉由雷射回火提供用於半導體薄膜再結晶 程與系統。半導體薄膜再結晶之製程,涉及以一雷射 單發幅照半導體薄膜工件複數個區域。系統直接導引 光束至半導體薄膜表面上之一區域或一點。入射雷射 係具有足夠強度或光量,以熔融其所照射之半導體薄 區域或點上的目標部份。該目標區域或目標部分被熔 後,係移動或步進雷射光束至半導體薄膜上另一區 點。當入射雷射光束移除後,已熔融半導體材料係再角 雷射光束在半導體薄膜之一點上的停留時間應足夠的 以致整個半導體薄膜工件之再結晶步驟可以高產出速 速地完成。 為了使讀者能在後續描述中更完整地理解本發 容,係提供矽薄膜雷射回火之相關描述。回火矽薄膜 於示範TFT元件應用。然而,應瞭解的是,本發明同 使用其它材料與/或用於其它元件應用。 本發明之實施例將參考第1圖至第6圖加以描述。 所使用之薄膜矽工件(如第2圖與第4圖至第6圖之 1 7 0)係為說明用途之工件。工件1 7 0可如為非結晶或 結晶之多晶矽膜,並置於平板顯示器之玻璃或塑膠 上。矽薄膜厚度,舉例言之,可為約100埃至大於約 埃之厚度範圍。本發明進一步描述第1圖所示之雷射 設備1 000,該設備已揭露於專利第53 1號,此專利在 之製 光束 雷射 光束 膜之 融之 域或 ;晶。 短, 率快 明内 可用 樣可 在此 工件 隨機 基板 5000 回火 此係 併入本文之參考文獻。4 了便於說明,本發明係以此設備 作為描述基礎,以使讀者更易於理解本發明之原理但任 何幅照設備或系統仍可採用。 設備1 000含一輻射源110、合適的光學元件12〇163、 與馬達傳送座组件180,其中在製程期間,輻射源110可 產生一活化輻射光束,光學元件120_163係用以成形與導 引輻射光束至工件之表面,而馬達傳送座組件〗8〇係用以 支撐工件170 ^輻射源110可為任何合適的輻射源以產 生具有足夠輻射能量強度之連續或脈衝光束,以熔融工件 170上半導趙薄膜被照射的區域或部分。舉例言之,輻射 源110可為任何合適的固態或其它型式的雷射、電子束或 離子束源。為了用於各式半導體再結晶應用,輻射源u 〇 所產生之輻射光束強度可為約l〇mJ/cm2至lj/em2之範圍 (如500 mj/cm2)。合適的光學儀器與/或電子儀器可用以調 整或脈衝(pulse)輻射源110產生的輻射光束。適於矽薄膜 工件170雷射回火製程的脈衝期(FWHM)範圍可如約由1〇 nsec至約2Q0nsec ’而脈衝重複速率範圍可如約由1 ohz至 約2 00 Hz。用於矽薄膜工件170雷射回火製程之合適輻射 源1 1 0可如為商業用XeCl脈衝激光雷射(如位於3201 West Commercial Blvd. Ft. Lauderdale, FL 33309, USA 之 Lambda Physik公司所販售之Model LPX-3 1 51激光雷射)》 合適的光學儀器120-163可用以調整、校準或聚焦雷射 110產生至工件170之輻射光束》特定言之,能量密度調 整器120可用以測定安排雷射光束脈衝的時間與/或調整 10 1331803 其之光量。舉例言之,調整器120可為商業用可控制光束 能量密度調整器(如 Lambda Physik 公司所販售之 MicroLas®雙極板可變衰減器)。其它用以成形雷射光束之 光學元件(如操縱鏡140、143、147、160與 162,放大與 校準透鏡141與142,均質器144,聚光透鏡145,視野透 鏡148,目鏡161,可控制遮光器152,多元件目標透鏡 163),也可如為任何由Lambda Physik公司或其它供應商 所販售之合適商業用光學元件。
用於成形與導引輻射光束之合適光學元件1 20-163可 包含罩幕系統1 5 0。罩幕系統1 5 0可為一投射罩幕系統, 其用以圖案化入射輻射149,以使最终入射於工件之輻射 光束164幾何地成形或圖案化。
在製程期間工件170乃置於其上的傳送座組件180,可 為任何可於一或多個維度中移動之合適馬達傳送座。可高 速傳送的傳送座有益於在此所述之高產率單發製程。傳送 座組件180可被支撐於合適的支撐結構上,以使薄膜矽工 件170不受震動干擾》支撐結構可包含如傳統光學工作 台’諸如架設於隔絕震動與自身平衡系統191、192' 193 與194上之花崗石塊光學工作台19〇。 電腦100可連接至雷射110'調整器12〇、傳送座组件 18〇與設備1000的其他可控制元件。電腦1〇〇可用以控制 入射雷射光束脈衝之時間與光量以及傳送座組件18〇之相 對位移。藉由將電腦1〇〇程式化以在X、γ'與Z方向上 控制地移動傳送座組件180。舉例言之,工件170可在χ_γ 11 1331803 平面内以及z方向 指令。在操作中’ 數,工件1 7 0相對 雷射回火製程期間 再設定。工件1 70 脈衝時間同步或相 在設備1000中 與輻射光束1 64相 當座1 80移動時, 光學元件之替代構 元件170沿著已界 腦控制光束操縱鏡 座1 8 0係位於固定 部分地免除機械投 以電子或光學光束 工件170部分。 使用設備 1000 由使用如牵涉到在 或偏移座180之位 所述。座180之移 融的部分係彼此近 再結晶並成長其結 以下一脈衝而炫融 在此所述之單潑 上之預定距離移動’以回應電腦之 依據工件17〇單發再結晶之預定製程參 於入射輻射光束164之位置’可在單發 ,於合適的時間點連續地調整或間歇地 的移動可與雷射no所產生之輻射光束 互協調。 ,傳送座組件180的移動係使工件170 對於彼此而傳送。在此所述之製程中’ 輻射光束164係固定於一位置或定向。 形或配置可用以使入射輻射光束1 64與 定路徑相對於彼此移動。舉例言之’電 可用以偏斜輻射光束164’而此時傳送 位置。藉此光束偏斜設置’其可全部或 射罩幕(例如罩幕系統150)的使用,而 導引裝置來快速地掃瞄或步進所選擇的 ,熔融半導體材料接續橫向地固化可藉 激光雷射腺衝間,座 180之增加的移動 置的程序而達成’如於專利第531號中 動量很小,以致矽薄膜接續以脈衝所炫 似。兩近似之溶融部分係容許第一部份 晶結構至鄰近部分中,而該鄰近部分則 〇 ;再结晶製程中,設備1000可藉由移動
12 1331803 座組件180以掃瞄或步進雷射光束遍佈半導體薄膜表面。 雷射光束具有足夠強度或光量,以熔融雷射光束脈衝照射 之區域或點的目標區域。為了處理整個工件 170,座組件 180可移動預定距離,以使得雷射光束沿著遍佈半導體薄 膜175/工件1 70上之路徑移動。第2圖係顯示路徑230、 255等,當入射輻射光束164橫跨工件170表面移動時, 其可由入射輻射光束164勾勒出該些路徑。
該些路徑的數量與幾何定向,可藉由雷射光束之截面尺 寸與電路或元件用於欲處理工件170的目標區域之需求而 決定。據此,半導體薄膜175 /工件170之表面可以區域的 幾何陣列加以分隔,以產生用於電腦1000或其它控制設備 1000操作之製程參數。第2圖係示範工件170上半導體薄 膜175表面的幾何分隔。在第2圖之示範幾何分隔中,表 面分隔成數個列(如205、206、207等)’而每一列具有一 寬度W。各列的寬度W係參考入射輻射光束164之橫截寬 度而決定。每一列含有一或多個區域。如說明圖號所示, 工件170可具有分別為約30公分與40公分的X與Y尺 寸。每一列20 5、206、207等,如,在Y方向上具有約1/2 公分之寬度W。此W值,如,大約與對應雷射光束為相同 尺寸。因此,工件170表面可分隔成80列,每列在X方 向約30公分長。每一列含有一或多個具有30公分長度的 區域(未顯示)。 每一列的座標值可作為製程參數儲存於電腦100。電腦 100可使用所儲存的座標值,如,用以計算座180在製程 13 1331803 。座標值也可用以計算雷 移動時,半導體薄膜175 射 之 期間之方向、時間與行經距離 110之照射時間,以當座18〇 指定區域被幅照》 當矽薄膜1 75欲進行幅股士 订知照時,工件丨70可線性傳送,以 使矽薄膜175之線性帶暴 恭露於具有熔融強度或光量之轄射 光束。設定輻射光束之傳谈% 得送路徑,以使矽薄膜175整個表 面之所需部分藉由暴露於垂 、雷射光束中相繼地進行處理。舉 例而言’傳送路徑係經< 4
' a计,使得雷射光束依序行經列 205 、 206 、 207 等。在笛._ 弟2圖中,輻射光束最初被導引至 遠離側邊210’並鄰近列2 5之左端的一點220。路徑23( 表示’如’當座180在刍γ + 男入方向移動時,輻射光束中心通 經列205所勾勒的傳送路徑。 座180之位移可以簡私以 从間歇性地停止與前進方式,或者連續 而不暫停地的方式,爽逡 來導51 —系列的步進’直到輻射光束 中心導引至鄰近列205女# ^ ^ Λ „ 右鸲之一點24〇。路徑區段225與 235 表示路徑 . 甲其可遠離工件170之邊緣210,
與2 1 0 而分別延仲a g(. 7 η 1甲至點220與240。該些區段必須可容納 座組件180在路鸦山 瓜230各端之加速與減速,與/或可用於再 起始座180的位置,以於另—方向移動座18〇。舉例言之, 座180可在負丫卞·。μ 方向上自點240移動,以使輻射光束中心 /口著路‘ 245移動至鄰近列2〇6右端之點247,以預備處 理歹! 2〇6中之梦材料。纟1 以相似於在列205沿路徑230 移動的方法(但相反方向),由點247在X方向上移動,以 使輻射光束的甲心沿著路徑255幅照列2〇6令的薄膜矽材 14 1331803 料。該移動可持讀至輻射 射光束中心入射到靠近列206左端 的點265為止。路徑延伸 β 甲&线260與250表示路徑25 5之 區段’其可延伸過邊緣21〇, Λ 、 210與210’’而分別延伸至點247 與265。進一步,座18〇 丫方向上線性移動,以使入射 輻射光束中心沿著路秤2 7 者路& 270移動至鄰近列207之點272。 而後’列207内之薄膜矽铋制 一 得膜命材料可藉由在負X方向上沿著路 徑275且進一步朝而工杜 ’朝白件〇〇之相對侧邊210,,來移動座
而加以處理。藉由如同用於列2〇5、2〇6肖2〇7之座 在X與γ方向上持續移動的方法薄膜矽175表面上 所有的列係被處理或幅照。應瞭解的&,上述路徑之特定 方向或排序僅為了說明用途,其它方向或排序可被採用。 在操作設備1000中,矽薄膜175可以光束脈衝164幅 照’其中光束脈衝之幾何輪廓係以罩幕系統丨5〇而界定。 罩幕系統150可包含為此用途合適之投射罩幕。罩幕系統
150可使入射於其上的單入射輻射光束(如光束149)轉變 為一幾何圖案中的複數個子光束。子光束幅照目標區域之 一對應幾何圖案’而該目標區域位於薄膜矽工件上之一區 域内》選擇每—子光束的強度,以有效地誘發已幅照薄膜 發部分遍及其(膜)厚度的完全炫融。 投射罩幕可以合適材料製得’該材料阻隔穿過光束149 不欲之橫截面區域的輻射通行’但容許通經所需區域的通 行。一承範投射罩幕可具有矩形帶之阻隔/非阻隔圖案或其 它合適之幾何形狀(可隨機排列或以幾何圖案排列)。該些 帶可如第3a圖所示之平行圖案’或如第3b圖所示之平行 15 1331803 與正交交雜之圖 參見第3a圖 其具有數個開口 部分3 10防止入 較之下,開口或 149之入射部分: 射光束164具有 303等之平行圖 系統150時,其 164係入射在半 合。子光束幅照 區域的對應圖案 再结晶或橫向固 束之側邊長度, 鄰。子光束之尺 地選擇透明狹縫 定。具有微米級 3 02、303 等,可 在多種情況下用 第3b圖顯汚 300A之圖案。在 352 ' 361 ' 362 等 也可用於罩幕系 之輻射光束164 案,或為任何其它合適圖案放置》 ,示範罩幕300A包含光束阻隔部分310, 或透明狹缝301、302、303等。光束阻隔 射光束149之入射部分通經罩幕300。相 透明狹缝301、302、303等容許輻射光束 通經罩幕300A »因此,離開罩幕300之輻 對應於複數個開口或透明狹縫301、302、 案的橫截面》故,當罩幕3 00定位於罩幕 可用以圖案化輻射光束164,其中該光束 導體薄膜175上呈平行矩形子光束之集 半導趙薄琪175表面上一區域之矩形目標 。為了促進薄膜係區域被子光束熔融後之 化’係選擇子光束之尺寸。如,選擇子光 以使相鄰區域内之對應目標區域彼此相 寸以及子光束間相隔的距離,可藉由合適 3(H、3〇2、303等的尺寸與相隔距離而決 或更大線性尺寸之開口或透明狹缝、 產生雷射韓射子光束,該子光束具有適於 於矽薄膜再結晶處理之尺寸。 七另一示範罩幕300B,其具有不同於罩幕 罩幕300B中,數個開口或透明狹缝351、 ,可沿著矩形邊缘成对排列。此罩幕3〇〇b 統15〇以B案化入射於半導體薄膜175上 。辕射光纟164可圖案化為排列於矩形圖 16 1331803 案之子光束的集合體。選擇子光束之尺寸,以促進被子光 束熔融之薄膜矽區域的再結晶或橫向固化。開口或透明狭 缝351、352、361、362等具有約0.5微米之線性尺寸,而 可產生適用以再結晶薄膜矽區域之雷射輻射子光束。
應瞭解的是,第3a圖與第3b圖所示之特定罩幕圖案僅 為示範用途,任何其它合適之罩幕圖案可加以採用,如專 利第625號所述之鋸齒形圖案。當用於TFT或其它半導體 產品之電子或裝置元件時,可選擇特定罩幕圖案以達再結 晶薄膜矽材料之目的。
第4圖顯示如工件170之部分,其已利用第3a圖之罩 幕300A進行處理(罩幕300A可由第3圖所示之定向旋轉 約9 0度)。所顯示之部分係對應於一列,如,工件1 7 0之 列2 0 5 (第2圖)。已處理工件1 7 0之列2 0 5包含再結晶多 晶矽線性區域或帶401、4 02等。每一線性帶係為藉由對應 罩幕狹縫3 0 1、3 02等形成之輻射子光束所幅照之結果。遍 佈列2 0 5之線性帶内之再結晶矽的連續範圍可例如為在雷 射光束暴露下(第2圖)沿著路徑230,座180之連續位移 的結果。帶40 1、402可具有對應於單發曝照的微結構,並 於中央具有碰撞液體/固體成長前緣,產生一長且位置經控 制之晶粒邊界。可替代地,在一方向固化製程,連續範圍 可為沿著路徑2 3 0、座1 8 0緊密間隔步進位移的結果,此 類位移係有效地重疊以容許連續再結晶矽帶形成。在此替 代製程中,再結晶材料之微結構可具有長且平行於掃瞄方 向之晶粒。再結晶多晶矽(如帶401、402等)可具有一大致 17 1331803 均一結構,以適用於一或多個TFT元件之主動區的配置。 相同地,第5圖顯示使用第3b圖之罩幕3 00B之示範結果。 示範處理工件1 70包含再結晶多晶矽帶501、502等。如同 帶401、402,再結晶多晶矽帶501、502等可具有一均一 結晶結構,以適用於TFT元件之主動區的配置。如圖所示, 帶501與5 02大致相互呈直角,其可對應於正交罩幕狹缝 (如第3b圖狹縫351、361)所形成之輻射子光束。帶501 與5 02之特定幾何定向與物理間的間隔(與帶401、402的 延伸長度相反),係為如在工件170製程期間,物理上分隔 暴露於雷射輻射之結果。分隔輻射曝照可藉由在製程期 間,座1 80步進移動而達成(如沿第2圖之路徑230)。另 外或替代地,當座180與雷射光束164以固定速度相對於 彼此移動或掃瞄時,分隔的曝照可藉由在合適時間與座 180的位置時,發射雷射110以產生輻射脈衝而達成。 在座1 8 0位移期間,電腦1 0 0可於適當時間與位置加以 控制雷射110之發射。電腦1〇〇可依據預程式化之處理配 方而作動,該處理配方例如包含用於工件處理 (workpiece-in-process)中之幾何設計資訊。第6圖顯示可 由電腦100使用而在適當時間發射雷射110的示範設計圖 案600。圖案600可為一幾何網格覆蓋薄膜矽 1 75/工件 170。網格可為如一矩形X-Y網格,其具有座標(xl,x2·.·等) 與(y 1,y2 ...等)。網格間隔可設計為有規則或無規則。圖案 600可以實質基準標記顯示(如在薄膜矽工件上),或可為 製程參數内之一數學指令°當座180位於網格座標(xi,yi) 18 1331803 時,電腦100可激發雷射110。電腦100可做此動作以回 應傳統位置感應器或指示器,其可被部署以感應座180之 位置。替代地,電腦1 〇 0可依計算時間激發雷射,該時間 係由諸如最初座位置、與座的位移速度與方向等參數加以 計算而得。電腦100也可助於指示雷射110,在一變化速 率而非一般的平均速率下,加以發射輻射脈衝。脈衝產生 的變化速率可有利地使用以容納座180速度之變化,如其 在路徑230各端加速或減速等相似情形。 應瞭解的是,以上描述僅用以說明本發明之原理,各式 變形可為熟習此項技藝者在無偏離本發明之精神與範圍下 製作而得,本發明之範圍與精神僅藉由以下申請專利範圍 所界定。 【圖式簡單說明】 本發明特徵、特性與各種優點將藉由以下較佳實施例 的詳細描述與後附圖示而更為顯明,其中相似參考符號在 全文中表不相似元件: 第1圖為用於半導體薄膜再結晶之雷射回火半導體製 程系統之示意圖與塊狀圖; 第2圖為示範薄膜矽工件之上視圖; 第3a圖與第3b圖為符合本發明原理之示範罩幕上視 圖; 第4圖為依據本發明原理,使用本發明第3a圖罩幕進 行處理之部分第2圖薄膜矽工件的示意圖; 19 1331803 第5圖為依據本發明原理,使用本發明第3b圖罩幕進 行處理之示範薄膜矽工件的示意圖;及 第 6圖為依據本發明原理,一示範幾何圖案之示意 圖,該示範幾何圖案之座標係用以激發輻射脈衝入射於矽 薄膜工件上。 【元件代表符號簡單說明】 100電腦 120-1 63光學元件 170工件 1 8 0馬達傳送座組件 191-194隔絕震動與自身平衡 2 1 0側邊 2 3 0路徑 245路徑 2 5 5路徑 265點 2 72點 300罩幕 35 1,352,36 1,362 開 σ 或透明《 401,402,501,502 再結晶多晶 a 1 1 0雷射 164輻射光束 175半導體薄膜 190花崗石塊光學工作台 系統205-207列 220點 240點 2 5 0延伸區域 2 60延伸區域 270路徑 2 75路徑 30 1 -303開口或透明狹缝 ^缝 >線性區域或帶
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Claims (1)
1331803 十、申請專利範圍: 1. 一種用以再結晶一半導體薄膜以增進其結晶品質之方 法,該方法至少包含:
(a) 以一輻射光束脈衝,幅照該半導體薄膜一表面之 一第一區域,其中該輻射光束係第一次被圖案化,而在子 光束圖案中轉變為至少一子光束,其中每一子光束係入射 在該第一區域中之一目標區域上,其中每一子光束具有足 夠光量,以熔融其所照射之該目標區域中的半導體材料, 且其中當該目標區域内之該已熔融半導體材料不再暴露至 該入射子光束時,該已熔融半導體材料係再結晶;以及 (b) 相對於該輻射光束連續地傳送該半導體薄膜,以 使該半導體薄膜之該表面的一第二區域,以相同於(a)之方 法加以幅照,其中該第二區域與該第一區域幾何地分離。
2.如申請專利範圍第1項所述之方法,其中該子光束具有 微米級之橫截面尺寸。 3.如申請專利範圍第1項所述之方法,該方法更包含使用 一罩幕圖案化來自該輻射光束脈衝之該些子光束。 4.如申請專利範圍第3項所述之方法,其中該罩幕至少包 含: 一阻隔部分,其阻隔入射至其上之輻射的穿過通行; 21 1331803 複數個狹縫,係位於一圖案内,其中該些狹缝容許入 射至其上之輻射的穿過通行,且其中該些狹缝係實質相互 平行設置於該圖案内。 5.如申請專利範圍第3項所述之方法,其中該罩幕至少包 含:
一阻隔部分,其阻隔入射至其上之輻射的穿過通行; 複數個狹缝,係位於一圖案内,其中該些狹縫容許入 射至其上之輻射的穿過通行,且其中該些狹縫係在該圖案 中沿著矩形側邊成對地排列。 6. 如申請專利範圍第1項所述之方法,該方法更包含支撐 該半導體薄膜於一可移動座上,且其中相對於該輻射光束 傳送該半導體薄膜至少包含沿著一線性路徑移動該可移動 座至下一區域。
7. 如申請專利範圍第6項所述之方法,其中該半導體薄膜 至少包含該些區域的複數個列,該方法更包含在該半導體 薄膜之該表面上,通經該些區域之一第一列並沿著該線性 路徑,移動該可移動座。 8.如申請專利範圍第7項所述之方法,其中該可移動座係 無暫停而連續地通經該些區域之該列移動。 22 1-331803 9.如申請專利範圍第7項所述之方法,其中該可移動座係 在一區域上暫停,並接續步進至一鄰近區域。 10. 如申請專利範圍第7項所述之方法,該方法更包含沿 著線性路徑移動該可移動座通經該些區域後續的列,直至 處理過該半導體薄膜的整個表面。
11. 如申請專利範圍第1項所述之方法,其中在該第一區 域内的該些目標區域之至少一者係鄰近於下一區域内之一 相對應目標區域,以在幅照該第一區域與下一區域之後, 形成一延伸帶或再結晶半導體材料。 1 2. —種用以再結晶一半導體薄膜以增進其結晶品質之方 法,該方法至少包含:
(a) 使用一雷射產生一輻射光束脈衝; (b) 以該輻射光束脈衝,幅照該半導體薄膜一表面之一 第一區域,其中該輻射光束係第一次被圖案化,而在子光 束圖案中轉變為至少一子光束,其中每一子光束係入射在 該第一區域中之一目標區域上,其中每一子光束具有足夠 光量,以熔融其所照射之該目標區域中的半導體材料,且 其中當在該目標區域内之該已熔融半導體材料不再暴露至 該入射子光束時,該已熔融半導體材料係再結晶:以及 23 1331803 (C)在以該輻射光束脈衝幅照該半導體薄膜之該表面 的第一區域之後,相對於該輻射光束傳送該半導體薄膜, 以使該半導體薄膜之該表面的一第二區域,以相同於(a) 與(b)之方法幅照,其中該第二區域與該第一區域幾何地分 離。
13.如申請專利範圍第12項所述之方法,其中根據該薄膜 半導體區域相對於該輻射光束之位置,發射該雷射,以產 生該輻射光束脈衝。 14.如申請專利範圍第12項所述之方法,該方法更包含支 撐該半導體薄膜於一可移動座上,且其中相對於該輻射光 束傳送該半導體薄膜至少包含移動該可移動座,且其中根 據該可移動座之位置發射該雷射,以產生該輻射光束脈衝。
15.如申請專利範圍第14項所述之方法,其中該可移動座 之位置係藉由位置感測器加以感測。 16.如申請專利範圍第14項所述之方法,其中該可移動座 之位置係以該座之起始位置加以計算。 24
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-
2003
- 2003-08-19 CN CNA038190478A patent/CN1757093A/zh active Pending
- 2003-08-19 KR KR1020057002870A patent/KR20050047103A/ko not_active Application Discontinuation
- 2003-08-19 JP JP2004529135A patent/JP2006512749A/ja active Pending
- 2003-08-19 AU AU2003258289A patent/AU2003258289A1/en not_active Abandoned
- 2003-08-19 WO PCT/US2003/025947 patent/WO2004017380A2/en active Application Filing
- 2003-08-19 US US10/524,809 patent/US7718517B2/en not_active Expired - Fee Related
- 2003-08-19 TW TW092122790A patent/TWI331803B/zh not_active IP Right Cessation
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2010
- 2010-02-18 US US12/708,307 patent/US7906414B2/en not_active Expired - Fee Related
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2011
- 2011-02-01 US US13/019,042 patent/US8479681B2/en not_active Expired - Lifetime
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2012
- 2012-08-23 US US13/592,843 patent/US8507368B2/en not_active Expired - Lifetime
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US20100197147A1 (en) | 2010-08-05 |
US20060040512A1 (en) | 2006-02-23 |
US8883656B2 (en) | 2014-11-11 |
CN1757093A (zh) | 2006-04-05 |
US8507368B2 (en) | 2013-08-13 |
US7718517B2 (en) | 2010-05-18 |
US20110186854A1 (en) | 2011-08-04 |
US8479681B2 (en) | 2013-07-09 |
WO2004017380A3 (en) | 2005-12-15 |
JP2006512749A (ja) | 2006-04-13 |
WO2004017380A2 (en) | 2004-02-26 |
US20130316548A1 (en) | 2013-11-28 |
KR20050047103A (ko) | 2005-05-19 |
US7906414B2 (en) | 2011-03-15 |
TW200405575A (en) | 2004-04-01 |
AU2003258289A1 (en) | 2004-03-03 |
US20130071974A1 (en) | 2013-03-21 |
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