JP4680850B2 - 薄膜トランジスタ及びその製造方法 - Google Patents
薄膜トランジスタ及びその製造方法 Download PDFInfo
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- JP4680850B2 JP4680850B2 JP2006221947A JP2006221947A JP4680850B2 JP 4680850 B2 JP4680850 B2 JP 4680850B2 JP 2006221947 A JP2006221947 A JP 2006221947A JP 2006221947 A JP2006221947 A JP 2006221947A JP 4680850 B2 JP4680850 B2 JP 4680850B2
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- 239000010409 thin film Substances 0.000 title claims description 63
- 238000004519 manufacturing process Methods 0.000 title claims description 30
- 239000010410 layer Substances 0.000 claims description 344
- 239000004065 semiconductor Substances 0.000 claims description 84
- 239000000758 substrate Substances 0.000 claims description 60
- 238000009792 diffusion process Methods 0.000 claims description 37
- 229910052751 metal Inorganic materials 0.000 claims description 30
- 239000002184 metal Substances 0.000 claims description 30
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 28
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 23
- 230000002265 prevention Effects 0.000 claims description 23
- 239000011229 interlayer Substances 0.000 claims description 20
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 20
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 17
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 16
- 239000003054 catalyst Substances 0.000 claims description 15
- 229910004205 SiNX Inorganic materials 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052759 nickel Inorganic materials 0.000 claims description 12
- 239000010936 titanium Substances 0.000 claims description 9
- 238000000059 patterning Methods 0.000 claims description 7
- 239000010935 stainless steel Substances 0.000 claims description 7
- 229910001220 stainless steel Inorganic materials 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- 230000004888 barrier function Effects 0.000 claims description 5
- 229910004200 TaSiN Inorganic materials 0.000 claims description 4
- 229910008482 TiSiN Inorganic materials 0.000 claims description 3
- 239000012297 crystallization seed Substances 0.000 claims description 3
- QRXWMOHMRWLFEY-UHFFFAOYSA-N isoniazide Chemical compound NNC(=O)C1=CC=NC=C1 QRXWMOHMRWLFEY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052755 nonmetal Inorganic materials 0.000 claims description 3
- 238000000034 method Methods 0.000 description 25
- 239000012535 impurity Substances 0.000 description 18
- 238000010438 heat treatment Methods 0.000 description 15
- 229920005591 polysilicon Polymers 0.000 description 13
- 229910052581 Si3N4 Inorganic materials 0.000 description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 12
- 238000002425 crystallisation Methods 0.000 description 10
- 238000001994 activation Methods 0.000 description 9
- 230000008025 crystallization Effects 0.000 description 8
- 238000004151 rapid thermal annealing Methods 0.000 description 7
- 239000011651 chromium Substances 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- -1 silicon nitrides Chemical class 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 230000003213 activating effect Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 239000000411 inducer Substances 0.000 description 3
- 229910021645 metal ion Inorganic materials 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000006356 dehydrogenation reaction Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical group [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007715 excimer laser crystallization Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000003504 photosensitizing agent Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Recrystallisation Techniques (AREA)
Description
LDD領域420bを形成した後、感光剤(Photo Resist;PR)(図示せず)を塗布し、フォト工程(photolithography)によってコンタクトホールドーピング領域を定義する。その後、半導体層420の露出したソース/ドレイン領域420c上に、高濃度の不純物を単位面積当り略1020lons/cm2でドーピングした後、感光剤を除去する。これにより、半導体層420には、高濃度でドーピングされたソース/ドレイン領域420c及び低濃度でドーピングされたLDD領域420bが形成される。即ち、半導体層420は、不純物がドーピングされないチャンネル領域420a、低濃度でドーピングされたLDD領域420b、及び電気的信号の印加を受けるためのソース/ドレイン領域420cを有する。
ゲート電極440は、第1の絶縁層430上に形成される。ここで、ゲート電極440は、半導体層420のチャンネル領域420aの上部に所定のパターンに形成される。一方、ゲート電極440は、導電性金属、例えば、アルミニウム(Al)、MoW、モリブデン(Mo)、銅(Cu)、銀(Ag)、銀合金、アルミニウム合金、及びITOで構成された群から選択される一つの物質からなり、これらに限定されるものではない。
ソース/ドレイン電極460a、460bは、第2の絶縁層450上に形成され、第1の絶縁層430と第2の絶縁層450に形成されたコンタクトホール470を介して半導体層420のソース/ドレイン領域430cとそれぞれ電気的に接続されるようにする(図5a)。
130、230、330、420 半導体層、
120、220、320、410 バッファ層、
130a、230a、330a、420a チャンネル層、
130b、230b、330b、420c ソース/ドレイン領域、
420b 低濃度ドーピング領域。
Claims (11)
- 可撓性基板と、
前記基板上に形成される非金属からなる3相系非晶質拡散防止層と、
前記拡散防止層上に形成されるバッファ層と、
前記バッファ層の一の領域上にチャンネル層とソース/ドレイン領域とを有して形成される半導体層と、
前記半導体層を含めて前記バッファ層上に形成されるゲート絶縁層と、
前記ゲート絶縁層上の前記チャンネル層と対応する領域に形成されるゲート電極と、
前記ゲート電極を含む前記ゲート絶縁層上に形成される層間絶縁層と、
前記層間絶縁層に前記ソース/ドレイン領域の少なくとも一の領域を露出させる所定のコンタクトホールを有し、前記ソース/ドレイン領域に接続されるように形成されるソース/ドレイン電極と、を備え、
前記拡散防止層は、TaSiN及びTiSiNのうちのいずれか一方で構成される薄膜トランジスタ。 - 前記拡散防止層は、100nm〜500nmの厚さに形成される請求項1に記載の薄膜トランジスタ。
- 前記バッファ層は、SiO 2 、SiNx、及びSiO 2 /SiNxからなる群から選択されたいずれかの一つで構成される請求項1または2に記載の薄膜トランジスタ。
- 前記バッファ層は、50nm〜30nmの厚さに形成される請求項3に記載の薄膜トランジスタ。
- 前記可撓性基板は、金属基板である請求項1〜4のいずれか1項に記載の薄膜トランジスタ。
- 前記金属基板は、ステンレススチールまたはチタニウムである請求項5に記載の薄膜トランジスタ。
- 可撓性基板を用意する段階と、
前記基板上にTaSiN及びTiSiNのうちのいずれか一方で構成される3相系非晶質拡散防止層を形成する段階と、
前記拡散防止層上にバッファ層を形成する段階と、
前記バッファ層上に非晶質シリコン層を形成する段階と、
前記非晶質シリコン層上にキャッピング層を形成する段階と、
前記キャッピング層上に金属触媒層を形成する段階と、
前記可撓性基板を熱処理して前記非晶質シリコン層を多結晶シリコン層に結晶化する段階と、
前記金属触媒層及び前記キャッピング層を除去する段階と、
前記多結晶シリコン層をパターニングして半導体層を形成する段階と、
前記半導体層が形成された基板上にゲート絶縁層、ゲート電極、層間絶縁層、及びソース/ドレイン電極を形成する段階と、
を含む薄膜トランジスタの製造方法。 - 前記金属触媒層は、ニッケルで構成される請求項7に記載の薄膜トランジスタの製造方法。
- 前記ニッケルは、10 13 〜10 14 atoms/cm 2 の密度で形成される請求項8に記載の薄膜トランジスタの製造方法。
- 前記非晶質シリコン層を結晶化する段階は、前記金属触媒層のニッケルが前記非晶質シリコン層の界面に移動して結晶化のシードを形成し、前記シードによって結晶化する請求項7〜9のいずれか1項に記載の薄膜トランジスタの製造方法。
- 前記キャッピング層はSiNx、SiOx、及びSiO 2 からなる群から選択されたいずれか一つで形成される請求項7〜10のいずれか1項に記載の薄膜トランジスタの製造方法。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050109826A KR100729054B1 (ko) | 2005-11-16 | 2005-11-16 | 박막 트랜지스터 및 그 제조 방법 |
KR1020050115112A KR100729055B1 (ko) | 2005-11-29 | 2005-11-29 | 박막 트랜지스터 및 그 제조 방법 |
KR1020050115969A KR100732827B1 (ko) | 2005-11-30 | 2005-11-30 | 박막 트랜지스터 및 그 제조방법 |
KR1020050120898A KR100722112B1 (ko) | 2005-12-09 | 2005-12-09 | 박막 트랜지스터 및 그의 제조방법 |
Publications (2)
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JP2007142367A JP2007142367A (ja) | 2007-06-07 |
JP4680850B2 true JP4680850B2 (ja) | 2011-05-11 |
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JP2006221947A Expired - Fee Related JP4680850B2 (ja) | 2005-11-16 | 2006-08-16 | 薄膜トランジスタ及びその製造方法 |
Country Status (2)
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US (1) | US7868327B2 (ja) |
JP (1) | JP4680850B2 (ja) |
Families Citing this family (55)
Publication number | Priority date | Publication date | Assignee | Title |
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US6555449B1 (en) | 1996-05-28 | 2003-04-29 | Trustees Of Columbia University In The City Of New York | Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidfication |
US6830993B1 (en) * | 2000-03-21 | 2004-12-14 | The Trustees Of Columbia University In The City Of New York | Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method |
MXPA02005590A (es) | 2000-10-10 | 2002-09-30 | Univ Columbia | Metodo y aparato para procesar capas de metal delgadas. |
WO2004017381A2 (en) | 2002-08-19 | 2004-02-26 | The Trustees Of Columbia University In The City Of New York | Process and system for laser crystallization processing of film regions on a substrate to minimize edge areas, and structure of such film regions |
JP2006512749A (ja) | 2002-08-19 | 2006-04-13 | ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク | 種々の照射パターンを有するシングルショット半導体処理システム及び方法 |
US7341928B2 (en) | 2003-02-19 | 2008-03-11 | The Trustees Of Columbia University In The City Of New York | System and process for processing a plurality of semiconductor thin films which are crystallized using sequential lateral solidification techniques |
US7164152B2 (en) | 2003-09-16 | 2007-01-16 | The Trustees Of Columbia University In The City Of New York | Laser-irradiated thin films having variable thickness |
WO2005029547A2 (en) * | 2003-09-16 | 2005-03-31 | The Trustees Of Columbia University In The City Of New York | Enhancing the width of polycrystalline grains with mask |
TWI351713B (en) | 2003-09-16 | 2011-11-01 | Univ Columbia | Method and system for providing a single-scan, con |
WO2005029546A2 (en) | 2003-09-16 | 2005-03-31 | The Trustees Of Columbia University In The City Of New York | Method and system for providing a continuous motion sequential lateral solidification for reducing or eliminating artifacts, and a mask for facilitating such artifact reduction/elimination |
US7318866B2 (en) | 2003-09-16 | 2008-01-15 | The Trustees Of Columbia University In The City Of New York | Systems and methods for inducing crystallization of thin films using multiple optical paths |
TWI359441B (en) | 2003-09-16 | 2012-03-01 | Univ Columbia | Processes and systems for laser crystallization pr |
WO2005034193A2 (en) | 2003-09-19 | 2005-04-14 | The Trustees Of Columbia University In The City Ofnew York | Single scan irradiation for crystallization of thin films |
US7645337B2 (en) * | 2004-11-18 | 2010-01-12 | The Trustees Of Columbia University In The City Of New York | Systems and methods for creating crystallographic-orientation controlled poly-silicon films |
US8221544B2 (en) | 2005-04-06 | 2012-07-17 | The Trustees Of Columbia University In The City Of New York | Line scan sequential lateral solidification of thin films |
JP2009518864A (ja) | 2005-12-05 | 2009-05-07 | ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク | 膜を加工するためのシステム及び方法並びに薄膜 |
CN101325219B (zh) * | 2007-06-15 | 2010-09-29 | 群康科技(深圳)有限公司 | 薄膜晶体管基板及其制造方法 |
KR20080111693A (ko) | 2007-06-19 | 2008-12-24 | 삼성모바일디스플레이주식회사 | 다결정 실리콘층의 제조 방법, 이를 이용하여 형성된박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치 |
WO2009039482A1 (en) | 2007-09-21 | 2009-03-26 | The Trustees Of Columbia University In The City Of New York | Collections of laterally crystallized semiconductor islands for use in thin film transistors |
WO2009042784A1 (en) | 2007-09-25 | 2009-04-02 | The Trustees Of Columbia University In The City Of New York | Methods of producing high uniformity in thin film transistor devices fabricated on laterally crystallized thin films |
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