JP5497324B2 - 多結晶シリコンの製造方法、薄膜トランジスタ、その製造方法及びそれを含む有機電界発光表示装置 - Google Patents
多結晶シリコンの製造方法、薄膜トランジスタ、その製造方法及びそれを含む有機電界発光表示装置 Download PDFInfo
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims description 32
- 238000004519 manufacturing process Methods 0.000 title claims description 29
- 239000010409 thin film Substances 0.000 title claims description 27
- 229910052751 metal Inorganic materials 0.000 claims description 156
- 239000002184 metal Substances 0.000 claims description 156
- 239000003054 catalyst Substances 0.000 claims description 138
- 238000002425 crystallisation Methods 0.000 claims description 104
- 230000008025 crystallization Effects 0.000 claims description 94
- 239000004065 semiconductor Substances 0.000 claims description 90
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 49
- 239000010408 film Substances 0.000 claims description 37
- 239000000758 substrate Substances 0.000 claims description 30
- 239000013078 crystal Substances 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 13
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- 238000000059 patterning Methods 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 229910052787 antimony Inorganic materials 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- 229910052793 cadmium Inorganic materials 0.000 claims 1
- 239000010410 layer Substances 0.000 description 185
- 238000000034 method Methods 0.000 description 46
- 230000008569 process Effects 0.000 description 16
- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 description 11
- 238000009792 diffusion process Methods 0.000 description 8
- 229910000838 Al alloy Inorganic materials 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- UBSJOWMHLJZVDJ-UHFFFAOYSA-N aluminum neodymium Chemical compound [Al].[Nd] UBSJOWMHLJZVDJ-UHFFFAOYSA-N 0.000 description 6
- 239000011651 chromium Substances 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 229910000881 Cu alloy Inorganic materials 0.000 description 4
- 229910001182 Mo alloy Inorganic materials 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- 239000007790 solid phase Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000007715 excimer laser crystallization Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000006356 dehydrogenation reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000010517 secondary reaction Methods 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02488—Insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02595—Microstructure polycrystalline
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02672—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation enhancing elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Recrystallisation Techniques (AREA)
- Thin Film Transistor (AREA)
- Electroluminescent Light Sources (AREA)
Description
120 非晶質シリコン層
130 キャッピング層
140 金属触媒層
140a 金属触媒
140b 金属触媒
150 熱処理
140 金属触媒層
140a 金属触媒
140b 金属触媒
150 熱処理
160A 金属触媒結晶化領域
160a 残留金属触媒
165 非晶質シリコン層
170A 金属触媒結晶化領域
Claims (11)
- 基板と、
前記基板上に位置するバッファ層と、
前記バッファ層上に位置する第1の半導体層及び第2の半導体層と、
前記第1の半導体層及び第2の半導体層と絶縁されているゲート電極と、
前記第1の半導体層及び第2の半導体層と前記ゲート電極を絶縁するゲート絶縁膜と、
前記ゲート電極と絶縁され、前記第2の半導体層に一部が接続するソース/ドレイン電極と、を含み、
前記第1の半導体層上部に前記第2の半導体層が位置し、
前記第1の半導体層は、金属触媒により結晶化された多結晶シリコン層であり、
前記第2の半導体層は、前記第1の半導体層から拡散された金属触媒により結晶化された多結晶シリコン層であり、
前記第2の半導体層がチャンネル領域を含むことを特徴とする薄膜トランジスタ。 - 前記第1の半導体層内には、前記第2の半導体層よりも金属触媒量がさらに多いことを特徴とする請求項1に記載の薄膜トランジスタ。
- 前記第2の半導体層の結晶粒の大きさは、前記第1の半導体層の結晶粒の大きさよりも大きいことを特徴とする請求項1に記載の薄膜トランジスタ。
- 基板を用意する工程と、
前記基板上に位置するバッファ層を形成する工程と、
前記バッファ層上に第1の半導体層及び第2の半導体層を形成する工程と、
前記基板全面にわたってゲート絶縁膜を形成する工程と、
前記ゲート絶縁膜上にゲート電極を形成する工程と、
前記ゲート電極と絶縁され、前記第2の半導体層に一部が接続するソース/ドレイン電極を形成する工程と、を含み、
前記第1の半導体層及び第2の半導体層は金属触媒により結晶化された多結晶シリコン層であり、前記第2の半導体層は前記第1の半導体層から拡散された金属触媒により結晶化され、
前記第2の半導体層にチャンネル領域が形成されることを特徴とする薄膜トランジスタの製造方法。 - 基板を用意する工程と、
前記基板上にバッファ層を形成する工程と、
前記バッファ層上に第1の非晶質シリコン層を形成する工程と、
前記第1の非晶質シリコン層上に金属触媒層を形成する工程と、
前記基板を熱処理して前記第1の非晶質シリコン層を第1の金属触媒結晶化領域に結晶化する工程と、
前記第1の金属触媒結晶化領域上に第2の非晶質シリコン層を形成する工程と、
前記第2の非晶質シリコン層を熱処理して第2の金属触媒結晶化領域に形成する工程と、
前記第1の金属触媒結晶化領域及び前記第2の金属触媒結晶化領域をパターニングして第1の半導体層及び第2の半導体層に形成する工程と、
をさらに含むことを特徴とする請求項4に記載の薄膜トランジスタの製造方法。 - 前記第1の非晶質シリコン層と前記金属触媒層との間にキャッピング層をさらに含むことを特徴とする請求項5に記載の薄膜トランジスタの製造方法。
- 前記熱処理は、350〜500℃で行うことを特徴とする請求項5に記載の薄膜トランジスタの製造方法。
- 前記金属触媒層は、Ni、Pd、Ag、Au、Al、Sn、Sb、Cu、Tr、及びCdからなる群から選択されるいずれか1つで形成することを特徴とする請求項5に記載の薄膜トランジスタの製造方法。
- 基板と、
前記基板上に位置するバッファ層と、
前記バッファ層上に位置する第1の半導体層及び第2の半導体層と、
前記第1の半導体層及び第2の半導体層と絶縁されているゲート電極と、
前記第1の半導体層及び第2の半導体層と前記ゲート電極を絶縁するゲート絶縁膜と、
前記ゲート電極と絶縁され、前記第2の半導体層に一部が接続するソース/ドレイン電極と、
前記ソース/ドレイン電極上に位置する絶縁膜と、
前記絶縁膜上に位置し、前記ソース/ドレイン電極と電気的に接続する第1の電極、有機膜層及び第2の電極と、
を含み、
前記第1の半導体層上部に前記第2の半導体層が位置し、
前記第1の半導体層は、金属触媒により結晶化された多結晶シリコン層であり、
前記第2の半導体層は、前記第1の半導体層から拡散された金属触媒により結晶化された多結晶シリコン層であり、
前記第2の半導体層にチャンネル領域を含むことを特徴とする有機電界発光表示装置。 - 前記第1の半導体層内には、前記第2の半導体層よりも金属触媒量がさらに多いことを特徴とする請求項9に記載の有機電界発光表示装置。
- 前記第2の半導体層の結晶粒の大きさは、前記第1の半導体層の結晶粒の大きさよりも大きいことを特徴とする請求項9に記載の有機電界発光表示装置。
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KR1020080137242A KR101049805B1 (ko) | 2008-12-30 | 2008-12-30 | 다결정 실리콘의 제조방법, 박막트랜지스터, 그의 제조방법및 이를 포함하는 유기전계발광표시장치 |
KR10-2008-0137242 | 2008-12-30 |
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JP2010157676A JP2010157676A (ja) | 2010-07-15 |
JP5497324B2 true JP5497324B2 (ja) | 2014-05-21 |
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US (1) | US8507914B2 (ja) |
EP (1) | EP2204844A1 (ja) |
JP (1) | JP5497324B2 (ja) |
KR (1) | KR101049805B1 (ja) |
CN (1) | CN101771087B (ja) |
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KR101720533B1 (ko) * | 2010-08-31 | 2017-04-03 | 삼성디스플레이 주식회사 | 다결정 실리콘층의 제조 방법, 상기 다결정 실리콘층 제조 방법을 포함하는 박막 트랜지스터의 제조 방법, 상기 방법에 의해 제조된 박막 트랜지스터, 및 상기 박막 트랜지스터를 포함하는 유기 발광 디스플레이 장치 |
KR101809661B1 (ko) * | 2011-06-03 | 2017-12-18 | 삼성디스플레이 주식회사 | 박막 트랜지스터, 그 제조 방법 및 이를 포함하는 유기 발광 표시 장치 |
KR20130007283A (ko) * | 2011-06-30 | 2013-01-18 | 삼성디스플레이 주식회사 | 박막 트랜지스터, 이를 구비한 표시 장치, 및 그 제조 방법 |
KR20130017312A (ko) * | 2011-08-10 | 2013-02-20 | 삼성디스플레이 주식회사 | 표시 장치 |
KR101959374B1 (ko) * | 2012-08-09 | 2019-03-20 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
KR20140039863A (ko) * | 2012-09-25 | 2014-04-02 | 삼성디스플레이 주식회사 | 다결정 규소막 형성 방법, 다결정 규소막을 포함하는 박막 트랜지스터 및 표시 장치 |
CN103700706B (zh) * | 2013-12-16 | 2015-02-18 | 京东方科技集团股份有限公司 | 薄膜晶体管制备方法和阵列基板制备方法 |
CN104576754B (zh) * | 2014-12-30 | 2018-12-21 | 深圳市华星光电技术有限公司 | 薄膜晶体管及薄膜晶体管的制备方法 |
CN104716200B (zh) * | 2015-04-03 | 2018-01-09 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制备方法、阵列基板和显示装置 |
CN106711155B (zh) * | 2017-01-16 | 2020-04-21 | 京东方科技集团股份有限公司 | 一种阵列基板、显示面板及显示装置 |
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JP3389022B2 (ja) * | 1996-09-27 | 2003-03-24 | シャープ株式会社 | 半導体装置 |
JPH1050609A (ja) * | 1997-03-31 | 1998-02-20 | Semiconductor Energy Lab Co Ltd | 薄膜状半導体装置の作製方法 |
JP4376979B2 (ja) * | 1998-01-12 | 2009-12-02 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
KR20000055877A (ko) | 1999-02-10 | 2000-09-15 | 장진 | 니켈이 포함된 다결정 실리콘 |
US7141822B2 (en) * | 2001-02-09 | 2006-11-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
JP4267266B2 (ja) * | 2001-07-10 | 2009-05-27 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US7238557B2 (en) * | 2001-11-14 | 2007-07-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating the same |
KR100721555B1 (ko) | 2004-08-13 | 2007-05-23 | 삼성에스디아이 주식회사 | 박막트랜지스터 및 그 제조 방법 |
KR100611762B1 (ko) * | 2004-08-20 | 2006-08-10 | 삼성에스디아이 주식회사 | 박막트랜지스터의 제조 방법 |
KR100770266B1 (ko) * | 2006-11-10 | 2007-10-25 | 삼성에스디아이 주식회사 | 유기전계발광표시장치 및 그 제조방법 |
KR100864883B1 (ko) | 2006-12-28 | 2008-10-22 | 삼성에스디아이 주식회사 | 박막트랜지스터, 그의 제조방법 및 이를 구비한유기전계발광표시장치. |
KR100864884B1 (ko) * | 2006-12-28 | 2008-10-22 | 삼성에스디아이 주식회사 | 박막트랜지스터, 그의 제조방법 및 이를 구비한유기전계발광표시장치 |
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- 2009-12-30 US US12/649,980 patent/US8507914B2/en not_active Expired - Fee Related
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US20100163855A1 (en) | 2010-07-01 |
US8507914B2 (en) | 2013-08-13 |
CN101771087B (zh) | 2012-07-18 |
CN101771087A (zh) | 2010-07-07 |
KR20100078863A (ko) | 2010-07-08 |
JP2010157676A (ja) | 2010-07-15 |
KR101049805B1 (ko) | 2011-07-15 |
EP2204844A1 (en) | 2010-07-07 |
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