JP2010206196A - 薄膜トランジスタ、その製造方法及びそれを含む有機電界発光表示装置 - Google Patents
薄膜トランジスタ、その製造方法及びそれを含む有機電界発光表示装置 Download PDFInfo
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- 239000010409 thin film Substances 0.000 title claims abstract description 43
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 238000005401 electroluminescence Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 claims abstract description 68
- 239000010408 film Substances 0.000 claims abstract description 57
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 239000010410 layer Substances 0.000 claims description 251
- 229910052751 metal Inorganic materials 0.000 claims description 85
- 239000002184 metal Substances 0.000 claims description 85
- 239000003054 catalyst Substances 0.000 claims description 66
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 55
- 238000000034 method Methods 0.000 claims description 48
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 41
- 238000009792 diffusion process Methods 0.000 claims description 35
- 238000002425 crystallisation Methods 0.000 claims description 18
- 230000008025 crystallization Effects 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 11
- 239000011229 interlayer Substances 0.000 claims description 9
- 229910052759 nickel Inorganic materials 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- 239000002253 acid Substances 0.000 claims description 4
- 229910052787 antimony Inorganic materials 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims 4
- FBAFATDZDUQKNH-UHFFFAOYSA-M iron chloride Chemical compound [Cl-].[Fe] FBAFATDZDUQKNH-UHFFFAOYSA-M 0.000 claims 2
- 238000005247 gettering Methods 0.000 description 23
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 17
- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 description 7
- 229910000838 Al alloy Inorganic materials 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- UBSJOWMHLJZVDJ-UHFFFAOYSA-N aluminum neodymium Chemical compound [Al].[Nd] UBSJOWMHLJZVDJ-UHFFFAOYSA-N 0.000 description 6
- 239000011651 chromium Substances 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 5
- 229910000881 Cu alloy Inorganic materials 0.000 description 4
- 229910001182 Mo alloy Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 229910021332 silicide Inorganic materials 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 description 2
- 239000012044 organic layer Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910017855 NH 4 F Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- ATMLPEJAVWINOF-UHFFFAOYSA-N acrylic acid acrylic acid Chemical compound OC(=O)C=C.OC(=O)C=C ATMLPEJAVWINOF-UHFFFAOYSA-N 0.000 description 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical class C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006356 dehydrogenation reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007715 excimer laser crystallization Methods 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hcl hcl Chemical compound Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
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- H01L21/02518—Deposited layers
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- H01L21/02656—Special treatments
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- H01L27/1259—Multistep manufacturing methods
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- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1277—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using a crystallisation promoting species, e.g. local introduction of Ni catalyst
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Abstract
【解決手段】基板と、前記基板上に位置するバッファ層と、前記バッファ層上に位置する半導体層と、前記半導体層と絶縁されるゲート電極と、前記半導体層と前記ゲート電極とを絶縁させるゲート絶縁膜と、前記ゲート電極と絶縁され、前記半導体層に一部が接続されるソース/ドレイン電極とを含み、前記半導体層は1つまたは複数の凹部を含むことを特徴とする薄膜トランジスタ及びその製造方法に関する。また、前記薄膜トランジスタにおいて、前記基板全面に位置する絶縁膜と、前記絶縁膜上に前記ソース/ドレインと電気的に接続される第1電極、有機膜層及び第2電極とを含み、前記半導体層は1つまたは複数の凹部を含むことを特徴とする有機電界発光表示装置に関する。
【選択図】図3C
Description
110、210、310、410 バッファ層
120、220 非晶質シリコン層
130 前記拡散層
140 金属触媒層
320 半導体層
320a、420a 多結晶シリコン層
330、430 ゲート絶縁膜
420 ゲート電極
Claims (20)
- 基板と、
前記基板上に位置するバッファ層と、
前記バッファ層上に位置する半導体層と、
前記半導体層と絶縁されるゲート電極と、
前記半導体層と前記ゲート電極とを絶縁するゲート絶縁膜と、
前記ゲート電極と絶縁されて前記半導体層に一部が接続されるソース/ドレイン電極と、を含み、
前記半導体層は1つまたは複数の凹部を含むことを特徴とする薄膜トランジスタ。 - 前記半導体層は、金属触媒を含むことを特徴とする請求項1に記載の薄膜トランジスタ。
- 前記凹部の大きさは、200〜1000nmであることを含むことを特徴とする請求項1に記載の薄膜トランジスタ。
- 前記基板全面に位置する層間絶縁膜を含み、
前記ゲート絶縁膜は、半導体層上に位置し、
前記ゲート電極は、前記ゲート絶縁膜上に位置して前記半導体層と対応し、
前記ソース/ドレイン電極は、前記層間絶縁膜上に位置して前記半導体層に一部が接続されることを特徴とする請求項1に記載の薄膜トランジスタ。 - 前記ゲート電極は、前記バッファ層上に位置し、
前記ゲート絶縁膜は、前記基板全面に位置し、
前記半導体層は、前記ゲート絶縁膜上に位置して前記ゲート電極と対応し、
前記ソース/ドレイン電極は、前記半導体層の一部を開口して前記半導体層と接続することを特徴とする請求項1に記載の薄膜トランジスタ。 - 基板を提供する工程と、
前記基板上に位置するバッファ層を形成する工程と、
前記バッファ層上に非晶質シリコン層を形成する工程と、
前記非晶質シリコン層上に金属触媒層を形成する工程と、
前記基板を熱処理して前記非晶質シリコン層を多結晶シリコン層に結晶化する工程と、
前記金属触媒層を除去する工程と、
前記多結晶シリコン層をエッチャント処理する工程と、
前記多結晶シリコン層をパターニングして半導体層を形成する工程と、
前記半導体層上にゲート絶縁膜を形成する工程と、
前記ゲート絶縁膜上にゲート電極を形成する工程と、
前記基板全面にかけて層間絶縁膜を形成する工程と、
前記層間絶縁膜上に、前記半導体層と一部が接続するソース/ドレイン電極を形成する工程と、
を含むことを特徴とする薄膜トランジスタの製造方法。 - 前記エッチャントは、塩酸、アセト酸、塩化鉄またはBOEのうちのいずれか1つを含むことを特徴とする請求項6に記載の薄膜トランジスタの製造方法。
- 前記非晶質シリコン層と金属触媒層との間に拡散層をさらに含んだ後、結晶化を行うことを特徴とする請求項6に記載の薄膜トランジスタの製造方法。
- 前記金属触媒層は、Ni、Pd、Ag、Au、Al、Sn、Sb、Cu、Tr、及びCdからなる群から選択されるいずれか1つを用いて形成することを特徴とする請求項6に記載の薄膜トランジスタの製造方法。
- 前記熱処理は、350〜500℃で行うことを特徴とする請求項6に記載の薄膜トランジスタの製造方法。
- 基板を提供する工程と、
前記基板上に位置するバッファ層を形成する工程と、
前記バッファ層上にゲート電極を形成する工程と、
前記基板全面にかけてゲート絶縁膜を形成する工程と、
前記ゲート絶縁膜上に非晶質シリコン層を形成する工程と、
前記非晶質シリコン層上に金属触媒層を形成する工程と、
前記基板を熱処理して前記非晶質シリコン層を多結晶シリコン層に結晶化する工程と、
前記金属触媒層を除去する工程と、
前記多結晶シリコン層をエッチャント処理する工程と、
前記多結晶シリコン層をパターニングして前記ゲート電極に対応する半導体層を形成する工程と、
前記半導体層の一部を露出させて前記半導体層に接続するソース/ドレイン電極を形成する工程と、
を含むことを特徴とする薄膜トランジスタの製造方法。 - 前記エッチャントは、塩酸、アセト酸、塩化鉄またはBOEのうちのいずれか1つを含むことを特徴とする請求項11に記載の薄膜トランジスタの製造方法。
- 前記非晶質シリコン層と金属触媒層との間に拡散層をさらに含んだ後、結晶化を行うことができることを特徴とする請求項11に記載の薄膜トランジスタの製造方法。
- 前記金属触媒層は、Ni、Pd、Ag、Au、Al、Sn、Sb、Cu、Tr、及びCdからなる群から選択されるいずれか1つを用いて形成することを特徴とする請求項11に記載の薄膜トランジスタの製造方法。
- 前記熱処理は、350〜500℃で行うことを特徴とする請求項11に記載の薄膜トランジスタの製造方法。
- 基板と、
前記基板上に位置するバッファ層と、
前記バッファ層上に位置する半導体層と、
前記半導体層と絶縁されるゲート電極と、
前記半導体層と前記ゲート電極とを絶縁させるゲート絶縁膜と、
前記ゲート電極と絶縁されて、前記半導体層に一部が接続するソース/ドレイン電極と、
前記基板全面に位置する絶縁膜と、
前記絶縁膜上に前記ソース/ドレインと電気的に接続する第1電極、有機膜層及び第2電極と、を含み、
前記半導体層は1つまたは複数の凹部を含むことを特徴とする有機電界発光表示装置。 - 前記半導体層は、金属触媒を含むことを特徴とする請求項16に記載の有機電界発光表示装置。
- 前記凹部の大きさは、200〜1000nmであることを含むことを特徴とする請求項16に記載の有機電界発光表示装置。
- 前記基板全面に位置する層間絶縁膜を含み、
前記ゲート絶縁膜は、前記半導体層上に位置し、
前記ゲート電極は、前記ゲート絶縁膜上に位置し、前記半導体層と対応し、
前記ソース/ドレイン電極は、前記層間絶縁膜上に位置し、前記半導体層に一部が接続することを特徴とする請求項16に記載の有機電界発光表示装置。 - 前記ゲート電極は、前記バッファ層上に位置し、
前記ゲート絶縁膜は、前記基板全面に位置し、
前記半導体層は、前記ゲート絶縁膜上に位置し、前記ゲート電極と対応し、
前記ソース/ドレイン電極は、前記半導体層の一部を開口し、前記半導体層に接続することを特徴とする請求項16に記載の有機電界発光表示装置。
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KR101049801B1 (ko) | 2009-03-05 | 2011-07-15 | 삼성모바일디스플레이주식회사 | 다결정 실리콘층의 제조방법 및 이에 이용되는 원자층 증착장치 |
KR101056428B1 (ko) | 2009-03-27 | 2011-08-11 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조방법, 및 이를 포함하는 유기전계발광표시장치 |
KR101094295B1 (ko) | 2009-11-13 | 2011-12-19 | 삼성모바일디스플레이주식회사 | 다결정 실리콘층의 제조방법, 박막트랜지스터의 제조방법, 및 유기전계발광표시장치의 제조방법 |
KR20120131753A (ko) * | 2011-05-26 | 2012-12-05 | 삼성디스플레이 주식회사 | 박막 트랜지스터, 박막 트랜지스터의 제조 방법 및 유기 발광 표시 장치 |
KR101809661B1 (ko) * | 2011-06-03 | 2017-12-18 | 삼성디스플레이 주식회사 | 박막 트랜지스터, 그 제조 방법 및 이를 포함하는 유기 발광 표시 장치 |
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US20100224883A1 (en) | 2010-09-09 |
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KR20100099618A (ko) | 2010-09-13 |
EP2226833A1 (en) | 2010-09-08 |
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