JP5274341B2 - 薄膜トランジスタ、その製造方法及びそれを含む有機電界発光表示装置 - Google Patents
薄膜トランジスタ、その製造方法及びそれを含む有機電界発光表示装置 Download PDFInfo
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- JP5274341B2 JP5274341B2 JP2009085265A JP2009085265A JP5274341B2 JP 5274341 B2 JP5274341 B2 JP 5274341B2 JP 2009085265 A JP2009085265 A JP 2009085265A JP 2009085265 A JP2009085265 A JP 2009085265A JP 5274341 B2 JP5274341 B2 JP 5274341B2
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- 239000010409 thin film Substances 0.000 title claims description 33
- 238000004519 manufacturing process Methods 0.000 title claims description 32
- 239000004065 semiconductor Substances 0.000 claims description 172
- 229910052751 metal Inorganic materials 0.000 claims description 159
- 239000002184 metal Substances 0.000 claims description 159
- 239000003054 catalyst Substances 0.000 claims description 137
- 238000002425 crystallisation Methods 0.000 claims description 119
- 230000008025 crystallization Effects 0.000 claims description 106
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 52
- 239000010408 film Substances 0.000 claims description 48
- 239000000758 substrate Substances 0.000 claims description 44
- 238000000034 method Methods 0.000 claims description 43
- 238000009792 diffusion process Methods 0.000 claims description 32
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 28
- 238000010438 heat treatment Methods 0.000 claims description 15
- 239000013078 crystal Substances 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- 238000000059 patterning Methods 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 229910052787 antimony Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 229910052793 cadmium Inorganic materials 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 216
- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 description 11
- 229910000838 Al alloy Inorganic materials 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- UBSJOWMHLJZVDJ-UHFFFAOYSA-N aluminum neodymium Chemical compound [Al].[Nd] UBSJOWMHLJZVDJ-UHFFFAOYSA-N 0.000 description 6
- 239000011651 chromium Substances 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 239000007790 solid phase Substances 0.000 description 5
- 229910000881 Cu alloy Inorganic materials 0.000 description 4
- 229910001182 Mo alloy Inorganic materials 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000007715 excimer laser crystallization Methods 0.000 description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical class C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- 229910052614 beryl Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000006356 dehydrogenation reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02672—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation enhancing elements
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02304—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment formation of intermediate layers, e.g. buffer layers, layers to improve adhesion, lattice match or diffusion barriers
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02488—Insulating materials
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32055—Deposition of semiconductive layers, e.g. poly - or amorphous silicon layers
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1277—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using a crystallisation promoting species, e.g. local introduction of Ni catalyst
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1281—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor by using structural features to control crystal growth, e.g. placement of grain filters
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
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- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
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- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
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Description
図1Aに示すように、ガラスまたはプラスチックの基板100上にバッファ層110を形成する。前記バッファ層110は、化学気相蒸着(Chemical Vapor Deposition)法または物理気相蒸着(Physical Vapor Deposition)法を利用してシリコン酸化膜、シリコン窒化膜のような絶縁膜を用いて断層またはその積層構造で形成される。このとき、前記バッファ層110は、前記基板100から発生する水分や不純物の拡散を防止する、または結晶化時に熱伝達速度を調節することによって、非晶質シリコン層の結晶化が好ましく行えるような役割をする。
110 バッファ層
120 第1非晶質シリコン層
130 拡散層
140 金属触媒層
140a、140b 金属触媒
150、150’ 熱処理
160A 第1金属触媒結晶化領域
170A 第2金属触媒結晶化領域
Claims (20)
- 基板と、
前記基板上に位置するバッファ層と、
前記バッファ層上に位置する第1半導体層及び第2半導体層と、
前記第1半導体層及び第2半導体層と絶縁されるゲート電極と、
前記第1半導体層及び第2半導体層と前記ゲート電極とを絶縁させるゲート絶縁膜と、
前記ゲート電極と絶縁され、前記第2半導体層と一部が接続するソース/ドレイン電極と、を含み、
前記第1半導体層は前記第2半導体層のチャンネル領域の下部に位置し、前記第1半導体層の面積は第2半導体層の面積よりも小さいことを特徴とする薄膜トランジスタ。 - 前記第1半導体層及び第2半導体層は、金属触媒による多結晶シリコン層であることを特徴とする請求項1に記載の薄膜トランジスタ。
- 前記第2半導体層の結晶粒の大きさは、前記第1半導体層の結晶粒の大きさよりも大きいことを特徴とする請求項1に記載の薄膜トランジスタ。
- 基板と、
前記基板上に位置するバッファ層と、
前記バッファ層上に位置する第1半導体層及び第2半導体層と、
前記第1半導体層及び前記第2半導体層を含む前記基板全面にわたって位置するゲート絶縁膜と、
前記ゲート絶縁膜上に位置するゲート電極と、
前記第2半導体層と一部が接続するソース/ドレイン電極と、を含み、
前記第1半導体層上部に第2半導体層が位置することを特徴とする請求項1に記載の薄膜トランジスタ。 - 基板と、
前記基板上に位置するバッファ層と、
前記バッファ層上に位置するゲート電極と、
前記ゲート電極を含む基板全面にわたって位置するゲート絶縁膜と、
前記ゲート絶縁膜上に位置し、前記ゲート電極に対応されるように位置する第1半導体層及び第2半導体層と、
前記第2半導体層と一部が接続するソース/ドレイン電極と、を含み、
前記第1半導体層上部に第2半導体層が位置することを特徴とする請求項1に記載の薄膜トランジスタ。 - 基板を用意する工程と、
前記基板上に位置するバッファ層を形成する工程と、
前記バッファ層上に第1半導体層を形成する工程と、
前記第1半導体層上に第2半導体層を形成する工程と、
前記基板全面にわたってゲート絶縁膜を形成する工程と、
前記ゲート絶縁膜上にゲート電極を形成する工程と、
前記ゲート電極と絶縁され、前記第2半導体層と一部が接続するソース/ドレイン電極を形成する工程と、を含み、
前記第1半導体層及び第2半導体層は金属触媒に結晶化された多結晶シリコン層であり、前記第2半導体層は前記第1半導体層内の金属触媒で結晶化することを含み、前記第1半導体層は前記第2半導体層のチャンネル領域の下部に位置し、前記第1半導体層の面積は前記第2半導体層の面積よりも小さく形成することを特徴とする薄膜トランジスタの製造方法。 - 前記バッファ層上に第1半導体層を形成する工程と、前記第1半導体層上に第2半導体層を形成する工程とは、
前記バッファ層上に第1非晶質シリコン層を形成する工程と、
前記第1非晶質シリコン層上に金属触媒層を形成する工程と、
前記基板を熱処理して前記第1非晶質シリコン層を第1金属触媒結晶化領域に結晶化する工程と、
前記金属触媒層を除去する工程と、
前記第1金属触媒結晶化領域をパターニングして第1半導体層で形成する工程と、
前記第1半導体層上に第2非晶質シリコン層を形成する工程と、
前記第2非晶質シリコン層を熱処理して第2金属触媒結晶化領域に形成する工程と、
前記第2金属触媒結晶化領域をパターニングして第2半導体層に形成する工程と、
を含むことを特徴とする請求項6に記載の薄膜トランジスタの製造方法。 - 前記第1非晶質シリコン層と前記金属触媒層との間には、拡散層をさらに含めた後に結晶化を行うことを特徴とする請求項7に記載の薄膜トランジスタの製造方法。
- 前記熱処理は、350〜500℃で行うことを特徴とする請求項7に記載の薄膜トランジスタの製造方法。
- 前記金属触媒層は、Ni、Pd、Ag、Au、Al、Sn、Sb、Cu、Tr、及びCdからなる群から選択されるいずれか1つから形成することを特徴とする請求項7に記載の薄膜トランジスタの製造方法。
- 基板を用意する工程と、
前記基板上に位置するバッファ層を形成する工程と、
前記バッファ層上にゲート電極を形成する工程と、
前記基板全面にわたってゲート絶縁膜を形成する工程と、
前記ゲート絶縁膜上に前記ゲート電極と対応するように第1半導体層を形成する工程と、
前記第1半導体層上に第2半導体層を形成する工程と、
前記第2半導体層の一部を開口し、前記第2半導体層と接続するソース/ドレイン電極を形成する工程と、を含み、
前記第1半導体層及び第2半導体層は金属触媒に結晶化した多結晶シリコン層であり、前記第2半導体層は前記第1半導体層内の金属触媒で結晶化することを含み、前記第1半導体層は前記第2半導体層のチャンネル領域の下部に位置し、前記第1半導体層の面積は前記第2半導体層の面積よりも小さく形成することを特徴とする薄膜トランジスタの製造方法。 - 前記ゲート絶縁膜上に前記ゲート電極と対応するように第1半導体層を形成する工程と、前記第2半導体層を形成する工程とは、
前記ゲート絶縁膜上に第1非晶質シリコン層を形成する工程と、
前記第1非晶質シリコン層上に金属触媒層を形成する工程と、
前記基板を熱処理して前記第1非晶質シリコン層を第1金属触媒結晶化領域に結晶化する工程と、
前記第1金属触媒結晶化領域をパターニングして第1半導体層に形成する工程と、
前記第1半導体層上に第2非晶質シリコン層を形成する工程と、
前記第2非晶質シリコン層を熱処理して第2金属触媒結晶化領域に形成する工程と、
前記第2金属触媒結晶化領域をパターニングして第2半導体層に形成する工程と、含むことを特徴とする請求項11に記載の薄膜トランジスタの製造方法。 - 前記第1非晶質シリコン層と前記金属触媒層との間には、拡散層をさらに含めた後に結晶化を行うことを特徴とする請求項12に記載の薄膜トランジスタの製造方法。
- 前記熱処理は、350〜500℃で行うことを特徴とする請求項12に記載の薄膜トランジスタの製造方法。
- 前記金属触媒層は、Ni、Pd、Ag、Au、Al、Sn、Sb、Cu、Tr、及びCdからなる群から選択されるいずれか1つから形成することを特徴とする請求項12に記載の薄膜トランジスタの製造方法。
- 基板と、
前記基板上に位置するバッファ層と、
前記バッファ層上に位置する第1半導体層と、
前記第1半導体層上に位置する第2半導体層と、
前記第1半導体層及び第2半導体層と絶縁されるゲート電極と、
前記第1半導体層及び第2半導体層と前記ゲート電極とを絶縁させるゲート絶縁膜と、
前記ゲート電極と絶縁され、前記第2半導体層と一部が接続するソース/ドレイン電極と、
前記ソース/ドレイン電極上に位置する絶縁膜と、
前記絶縁膜上に位置して前記ソース/ドレイン電極と電気的に接続する第1電極、有機膜層及び第2電極と、を含み、
前記第1半導体層は前記第2半導体層のチャンネル領域の下部に位置し、前記第1半導体層の面積は第2半導体層の面積よりも小さいことを特徴とする有機電界発光表示装置。 - 前記第1半導体層及び第2半導体層は、金属触媒による多結晶シリコン層であることを特徴とする請求項16に記載の有機電界発光表示装置。
- 前記第2半導体層の結晶粒の大きさは、前記第1半導体層の結晶粒の大きさよりも大きいことを特徴とする請求項16に記載の有機電界発光表示装置。
- 基板と、
前記基板上に位置するバッファ層と、
前記バッファ層上に位置する第1半導体層及び第2半導体層と、
前記第1半導体層及び前記第2半導体層を含む前記基板全面にわたって位置するゲート絶縁膜と、
前記ゲート絶縁膜上に位置するゲート電極と、
前記第2半導体層と一部が接続するソース/ドレイン電極と、を含み、
前記第1半導体層上部に第2半導体層が位置することをさらに含むことを特徴とする請求項16に記載の有機電界発光表示装置。 - 基板と、
前記基板上に位置するバッファ層と、
前記バッファ層上に位置するゲート電極と、
前記ゲート電極を含む基板全面にわたって位置するゲート絶縁膜と、
前記ゲート絶縁膜上に位置し、前記ゲート電極に対応するように位置する第1半導体層及び第2半導体層と、
前記第2半導体層と一部が接続するソース/ドレイン電極と、を含み、
前記第1半導体層上部に第2半導体層が位置することをさらに含むことを特徴とする請求項16に記載の有機電界発光表示装置。
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