JPS5727035A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5727035A
JPS5727035A JP10117880A JP10117880A JPS5727035A JP S5727035 A JPS5727035 A JP S5727035A JP 10117880 A JP10117880 A JP 10117880A JP 10117880 A JP10117880 A JP 10117880A JP S5727035 A JPS5727035 A JP S5727035A
Authority
JP
Japan
Prior art keywords
irradiating
irradiated
rays
slit
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10117880A
Other languages
Japanese (ja)
Inventor
Takahide Ikeda
Sumio Kawakami
Yutaka Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10117880A priority Critical patent/JPS5727035A/en
Publication of JPS5727035A publication Critical patent/JPS5727035A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dicing (AREA)

Abstract

PURPOSE:To prevent the deterioration of electrical characteristics due to the overlap of irradiating regions, and to obtain homogeneous semiconductor elements by conforming the outer circumferential sections of the irradiating regions to the separating sections of separation among the elements when lasre rays are irradiated to the semiconductor elements in pulse shapes. CONSTITUTION:A Q switch laser is irradiated onto a semiconductor chip 14, on which a pattern indicating boundarise is carved, in a pulse shape through a metallic mask 10 to which a slit 11 positioned at an upper section is bored. In this case, the size 12 of the laser rays is previously made larger than the slit 11, and the circumference of the irradiating region 15 is conformed to a scribing region around the chip. Accordingly, the recrystallization of a melted region due to irradiation is uniformalized because the laser rays are irradiated in pulse shapes without overlapping the irradiating regions.
JP10117880A 1980-07-25 1980-07-25 Manufacture of semiconductor device Pending JPS5727035A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10117880A JPS5727035A (en) 1980-07-25 1980-07-25 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10117880A JPS5727035A (en) 1980-07-25 1980-07-25 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5727035A true JPS5727035A (en) 1982-02-13

Family

ID=14293735

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10117880A Pending JPS5727035A (en) 1980-07-25 1980-07-25 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5727035A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006512749A (en) * 2002-08-19 2006-04-13 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク Single-shot semiconductor processing system and method having various irradiation patterns
JP2009529245A (en) * 2006-03-08 2009-08-13 アプライド マテリアルズ インコーポレイテッド Method and apparatus for heat treatment structure formed on a substrate
JP2014060423A (en) * 2006-03-08 2014-04-03 Applied Materials Inc Method and device for heat treated structure formed on substrate
US9646831B2 (en) 2009-11-03 2017-05-09 The Trustees Of Columbia University In The City Of New York Advanced excimer laser annealing for thin films

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006512749A (en) * 2002-08-19 2006-04-13 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク Single-shot semiconductor processing system and method having various irradiation patterns
JP2009529245A (en) * 2006-03-08 2009-08-13 アプライド マテリアルズ インコーポレイテッド Method and apparatus for heat treatment structure formed on a substrate
JP2014060423A (en) * 2006-03-08 2014-04-03 Applied Materials Inc Method and device for heat treated structure formed on substrate
US10141191B2 (en) 2006-03-08 2018-11-27 Applied Materials, Inc. Method of thermal processing structures formed on a substrate
US10840100B2 (en) 2006-03-08 2020-11-17 Applied Materials, Inc. Method of thermal processing structures formed on a substrate
US9646831B2 (en) 2009-11-03 2017-05-09 The Trustees Of Columbia University In The City Of New York Advanced excimer laser annealing for thin films

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