FR2538616B1 - METHOD FOR THE COLLECTIVE MANUFACTURE OF MICROWAVE DIODES WITH INCORPORATED ENCAPSULATION AND DIODES THUS OBTAINED - Google Patents
METHOD FOR THE COLLECTIVE MANUFACTURE OF MICROWAVE DIODES WITH INCORPORATED ENCAPSULATION AND DIODES THUS OBTAINEDInfo
- Publication number
- FR2538616B1 FR2538616B1 FR8221873A FR8221873A FR2538616B1 FR 2538616 B1 FR2538616 B1 FR 2538616B1 FR 8221873 A FR8221873 A FR 8221873A FR 8221873 A FR8221873 A FR 8221873A FR 2538616 B1 FR2538616 B1 FR 2538616B1
- Authority
- FR
- France
- Prior art keywords
- diodes
- encapsulation
- incorporated
- microwave
- collective manufacture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005538 encapsulation Methods 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8221873A FR2538616B1 (en) | 1982-12-28 | 1982-12-28 | METHOD FOR THE COLLECTIVE MANUFACTURE OF MICROWAVE DIODES WITH INCORPORATED ENCAPSULATION AND DIODES THUS OBTAINED |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8221873A FR2538616B1 (en) | 1982-12-28 | 1982-12-28 | METHOD FOR THE COLLECTIVE MANUFACTURE OF MICROWAVE DIODES WITH INCORPORATED ENCAPSULATION AND DIODES THUS OBTAINED |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2538616A1 FR2538616A1 (en) | 1984-06-29 |
FR2538616B1 true FR2538616B1 (en) | 1986-01-24 |
Family
ID=9280564
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8221873A Expired FR2538616B1 (en) | 1982-12-28 | 1982-12-28 | METHOD FOR THE COLLECTIVE MANUFACTURE OF MICROWAVE DIODES WITH INCORPORATED ENCAPSULATION AND DIODES THUS OBTAINED |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR2538616B1 (en) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2559959B1 (en) * | 1984-02-21 | 1987-05-22 | Thomson Csf | MICROWAVE DIODE WITH EXTERNAL CONNECTIONS TAKEN BY BEAMS AND METHOD FOR PRODUCING THE SAME |
GB8719309D0 (en) * | 1987-08-14 | 1987-09-23 | Marconi Electronic Devices | Diodes |
FR2631488B1 (en) * | 1988-05-10 | 1990-07-27 | Thomson Hybrides Microondes | PLANAR-TYPE INTEGRATED MICROWAVE CIRCUIT, COMPRISING AT LEAST ONE MESA COMPONENT, AND MANUFACTURING METHOD THEREOF |
FR2639149A1 (en) * | 1988-11-15 | 1990-05-18 | Thomson Csf | Process for making substrateless components |
KR940016546A (en) * | 1992-12-23 | 1994-07-23 | 프레데릭 얀 스미트 | Semiconductor device and manufacturing method |
KR940016630A (en) * | 1992-12-23 | 1994-07-23 | 프레데릭 얀 스미트 | Semiconductor device and manufacturing method |
EP0603973A3 (en) * | 1992-12-23 | 1995-06-28 | Philips Electronics Nv | Method of manufacturing a semiconductor device provided with a number of pn junctions separated each time by depression, and semiconductor device provided with a number of pn junctions separated each time by a depression. |
EP0603971A3 (en) * | 1992-12-23 | 1995-06-28 | Koninkl Philips Electronics Nv | Method of manufacturing a semiconductor device with passivated side and semiconductor device with passivated side. |
GB2368970A (en) * | 2000-06-28 | 2002-05-15 | Marconi Applied Techn Ltd | Semiconductor packaging |
DE10040448A1 (en) * | 2000-08-18 | 2002-03-07 | Osram Opto Semiconductors Gmbh | Semiconductor chip and method for its production |
JP3991872B2 (en) * | 2003-01-23 | 2007-10-17 | 松下電器産業株式会社 | Manufacturing method of semiconductor device |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2346854A1 (en) * | 1975-10-02 | 1977-10-28 | Thomson Csf | INTEGRATED CIRCUIT INCLUDING A SOURCE OF MILLIMETRIC WAVES, AND METHOD OF MANUFACTURING THE SAID CIRCUIT |
DE2611059A1 (en) * | 1976-03-16 | 1977-09-29 | Siemens Ag | ENCLOSURE SEMI-CONDUCTOR COMPONENT WITH DOUBLE HEAT SINK |
FR2410363A1 (en) * | 1977-11-28 | 1979-06-22 | Silicium Semiconducteur Ssc | Barrier formation in semiconductor - by cutting slot in semiconductor and then diffusing two layers simultaneously on its either side |
GB2067354B (en) * | 1980-01-09 | 1984-04-18 | Aei Semiconductors Ltd | Mounting for a sc device |
US4325182A (en) * | 1980-08-25 | 1982-04-20 | General Electric Company | Fast isolation diffusion |
-
1982
- 1982-12-28 FR FR8221873A patent/FR2538616B1/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
FR2538616A1 (en) | 1984-06-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |