JPS5727035Y1 - - Google Patents

Info

Publication number
JPS5727035Y1
JPS5727035Y1 JP10544672U JP10544672U JPS5727035Y1 JP S5727035 Y1 JPS5727035 Y1 JP S5727035Y1 JP 10544672 U JP10544672 U JP 10544672U JP 10544672 U JP10544672 U JP 10544672U JP S5727035 Y1 JPS5727035 Y1 JP S5727035Y1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP10544672U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP10544672U priority Critical patent/JPS5727035Y1/ja
Publication of JPS5727035Y1 publication Critical patent/JPS5727035Y1/ja
Expired legal-status Critical Current

Links

JP10544672U 1972-09-08 1972-09-08 Expired JPS5727035Y1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10544672U JPS5727035Y1 (zh) 1972-09-08 1972-09-08

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10544672U JPS5727035Y1 (zh) 1972-09-08 1972-09-08

Publications (1)

Publication Number Publication Date
JPS5727035Y1 true JPS5727035Y1 (zh) 1982-06-11

Family

ID=33108306

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10544672U Expired JPS5727035Y1 (zh) 1972-09-08 1972-09-08

Country Status (1)

Country Link
JP (1) JPS5727035Y1 (zh)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8859436B2 (en) 1996-05-28 2014-10-14 The Trustees Of Columbia University In The City Of New York Uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors formed using sequential lateral solidification and devices formed thereon
US8871022B2 (en) 2007-11-21 2014-10-28 The Trustees Of Columbia University In The City Of New York Systems and methods for preparation of epitaxially textured thick films
US8883656B2 (en) 2002-08-19 2014-11-11 The Trustees Of Columbia University In The City Of New York Single-shot semiconductor processing system and method having various irradiation patterns
US8889569B2 (en) 2009-11-24 2014-11-18 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse sequential lateral soldification

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8859436B2 (en) 1996-05-28 2014-10-14 The Trustees Of Columbia University In The City Of New York Uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors formed using sequential lateral solidification and devices formed thereon
US8883656B2 (en) 2002-08-19 2014-11-11 The Trustees Of Columbia University In The City Of New York Single-shot semiconductor processing system and method having various irradiation patterns
US8871022B2 (en) 2007-11-21 2014-10-28 The Trustees Of Columbia University In The City Of New York Systems and methods for preparation of epitaxially textured thick films
US8889569B2 (en) 2009-11-24 2014-11-18 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse sequential lateral soldification

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