KR100327087B1 - 레이저 어닐링 방법 - Google Patents
레이저 어닐링 방법 Download PDFInfo
- Publication number
- KR100327087B1 KR100327087B1 KR1019990024742A KR19990024742A KR100327087B1 KR 100327087 B1 KR100327087 B1 KR 100327087B1 KR 1019990024742 A KR1019990024742 A KR 1019990024742A KR 19990024742 A KR19990024742 A KR 19990024742A KR 100327087 B1 KR100327087 B1 KR 100327087B1
- Authority
- KR
- South Korea
- Prior art keywords
- laser beam
- silicon
- thin film
- laser
- silicon thin
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 29
- 238000005224 laser annealing Methods 0.000 title abstract description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 106
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 105
- 239000010703 silicon Substances 0.000 claims abstract description 105
- 239000010409 thin film Substances 0.000 claims abstract description 55
- 230000001678 irradiating effect Effects 0.000 claims abstract description 9
- 230000008018 melting Effects 0.000 claims abstract description 8
- 238000002844 melting Methods 0.000 claims abstract description 8
- 238000002425 crystallisation Methods 0.000 abstract description 26
- 230000008025 crystallization Effects 0.000 abstract description 26
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 6
- 230000003746 surface roughness Effects 0.000 abstract description 2
- 239000013078 crystal Substances 0.000 description 17
- 229910021417 amorphous silicon Inorganic materials 0.000 description 13
- 239000000758 substrate Substances 0.000 description 12
- 230000003287 optical effect Effects 0.000 description 8
- 239000000155 melt Substances 0.000 description 4
- 239000011856 silicon-based particle Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005499 laser crystallization Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000012297 crystallization seed Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02595—Microstructure polycrystalline
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02691—Scanning of a beam
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Materials Engineering (AREA)
- Electromagnetism (AREA)
- Plasma & Fusion (AREA)
- Recrystallisation Techniques (AREA)
Abstract
Description
Claims (5)
- 실리콘 박막을 완전히 용융시킬 수 있는 에너지 밀도를 가지되, 한 번의 레이저빔 조사로 성장되는 실리콘 그레인 길이의 두배보다 작은 크기의 폭을 가지는 레이저빔을 마련하는 단계와,상기 레이저빔을 사용하여 실리콘 박막을 1차 조사한 후, 실리콘 그레인을 성장시키는 단계와,상기 레이저빔 폭의 1/2 이하의 중첩율을 가지도록 실리콘 박막에 대하여 상기 레이저빔을 상대적으로 이동시키는 단계와,상기 레이저빔을 사용하여 상기 1차 조사로 성장된 실리콘 박막에 2차 조사하여 실리콘 그레인의 크기가 증가되게 성장시키는 단계를 포함하는 레이저 어닐링 방법.
- 청구항 1에 있어서,상기 레이저빔을 이동시키고 상기 실리콘 박막에 조사하고 실리콘 그레인을 성장시키는 공정을 반복적으로 실시하여 상기 실리콘 박막 전면을 스캐닝하여 결정화하는 레이저 어닐링 방법.
- 삭제
- 청구항 1에 있어서,상기 레이저빔을 다수개로 마련하고, 배열하여 다수개의 레이저빔을 동시에 사용하여 상기 실리콘 박막을 결정화시키는 레이저 어닐링 방법.
- 청구항 4에 있어서,상기 다수개의 레이저빔은 상기 레이저빔의 폭보다 작은 크기의 간격을 가지고 배열되어 실리콘 박막을 결정화시키는 레이저 어닐링 방법.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019990024742A KR100327087B1 (ko) | 1999-06-28 | 1999-06-28 | 레이저 어닐링 방법 |
US09/605,409 US6316338B1 (en) | 1999-06-28 | 2000-06-28 | Laser annealing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019990024742A KR100327087B1 (ko) | 1999-06-28 | 1999-06-28 | 레이저 어닐링 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20010004129A KR20010004129A (ko) | 2001-01-15 |
KR100327087B1 true KR100327087B1 (ko) | 2002-03-13 |
Family
ID=19596038
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019990024742A KR100327087B1 (ko) | 1999-06-28 | 1999-06-28 | 레이저 어닐링 방법 |
Country Status (2)
Country | Link |
---|---|
US (1) | US6316338B1 (ko) |
KR (1) | KR100327087B1 (ko) |
Cited By (1)
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US7115487B2 (en) | 2001-05-31 | 2006-10-03 | Canon Kabushiki Kaisha | Crystalline thin film and process for production thereof, element employing crystalline thin film, circuit employing element, and device employing element or circuit |
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KR102307499B1 (ko) | 2014-10-06 | 2021-10-01 | 삼성디스플레이 주식회사 | 위상변이 마스크 및 이를 이용한 디스플레이 장치 제조방법 |
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1999
- 1999-06-28 KR KR1019990024742A patent/KR100327087B1/ko not_active IP Right Cessation
-
2000
- 2000-06-28 US US09/605,409 patent/US6316338B1/en not_active Expired - Lifetime
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7115487B2 (en) | 2001-05-31 | 2006-10-03 | Canon Kabushiki Kaisha | Crystalline thin film and process for production thereof, element employing crystalline thin film, circuit employing element, and device employing element or circuit |
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Publication number | Publication date |
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US6316338B1 (en) | 2001-11-13 |
KR20010004129A (ko) | 2001-01-15 |
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