KR100496251B1 - 순차측면고상 결정화 기술을 이용한 비정질 실리콘층의결정화 방법 - Google Patents
순차측면고상 결정화 기술을 이용한 비정질 실리콘층의결정화 방법 Download PDFInfo
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- KR100496251B1 KR100496251B1 KR10-2002-0073554A KR20020073554A KR100496251B1 KR 100496251 B1 KR100496251 B1 KR 100496251B1 KR 20020073554 A KR20020073554 A KR 20020073554A KR 100496251 B1 KR100496251 B1 KR 100496251B1
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- Prior art keywords
- silicon layer
- crystalline silicon
- laser beam
- sub
- amorphous silicon
- Prior art date
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- 238000000034 method Methods 0.000 title claims abstract description 42
- 238000002425 crystallisation Methods 0.000 title claims abstract description 27
- 230000008025 crystallization Effects 0.000 title claims abstract description 25
- 229910021417 amorphous silicon Inorganic materials 0.000 title claims abstract description 23
- 230000008023 solidification Effects 0.000 title description 5
- 238000007711 solidification Methods 0.000 title description 5
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 42
- 230000008018 melting Effects 0.000 claims abstract description 16
- 238000002844 melting Methods 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 230000001678 irradiating effect Effects 0.000 claims abstract description 10
- 239000013078 crystal Substances 0.000 claims description 16
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 13
- 239000011261 inert gas Substances 0.000 claims description 3
- 238000004381 surface treatment Methods 0.000 abstract description 25
- 230000007547 defect Effects 0.000 abstract description 17
- 230000003746 surface roughness Effects 0.000 abstract description 3
- 239000000463 material Substances 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 11
- 238000010586 diagram Methods 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000000593 degrading effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- -1 silicon ions Chemical class 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02595—Microstructure polycrystalline
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02686—Pulsed laser beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02691—Scanning of a beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78672—Polycrystalline or microcrystalline silicon transistor
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Recrystallisation Techniques (AREA)
Abstract
Description
Claims (6)
- 절연 기판 상에 형성된 비정질 실리콘층에 소정의 빔폭을 가지는 완전 용융 영역대 에너지 밀도의 제 1 레이저빔을 여러 번 중첩되게 조사하여 서브 결정립과, 서브 결정립 간의 경계부에 위치하는 서브 결정립계와, 서로 마주보는 방향으로 성장된 서브 결정립 그룹간의 접촉 지점에 위치하는 메인 결정립계로 이루어지는 결정질 실리콘 층을 형성하는 단계와;상기 기판을 진공 또는 불활성 기체 분위기의 챔버 내에 배치하는 단계와;부분 용융 영역대 에너지 밀도의 제 2 레이저빔을 상기 결정질 실리콘 기판 전면에 조사하는 단계를 포함하여, 상기 서브 결정립계, 메인 결정립계, 상기 제 1 레이저빔의 중첩구간에서의 서브 결정립 영역에 위치하는 미세한 결정립자들을 재 결정화하는 SLS 결정화 기술을 이용한 비정질 실리콘 층의 결정화 방법.
- 제 1항에 있어서,상기 챔버 상부면은 유전성 윈도우(dielectric window)로 이루어지고, 상기 제 2 레이저빔은 상기 유전성 윈도우를 통과하여 상기 챔버 내 결정질 실리콘 기판에 조사되는 SLS 결정화 기술을 이용한 비정질 실리콘 층의 결정화 방법.
- 삭제
- 삭제
- 삭제
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Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2002-0073554A KR100496251B1 (ko) | 2002-11-25 | 2002-11-25 | 순차측면고상 결정화 기술을 이용한 비정질 실리콘층의결정화 방법 |
US10/717,676 US20040106244A1 (en) | 2002-11-25 | 2003-11-21 | Method of crystallizing amorphous silicon and device fabricated using the same |
US11/822,297 US7767558B2 (en) | 2002-11-25 | 2007-07-03 | Method of crystallizing amorphous silicon and device fabricated using the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2002-0073554A KR100496251B1 (ko) | 2002-11-25 | 2002-11-25 | 순차측면고상 결정화 기술을 이용한 비정질 실리콘층의결정화 방법 |
Publications (2)
Publication Number | Publication Date |
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KR20040045705A KR20040045705A (ko) | 2004-06-02 |
KR100496251B1 true KR100496251B1 (ko) | 2005-06-17 |
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Family Applications (1)
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KR10-2002-0073554A KR100496251B1 (ko) | 2002-11-25 | 2002-11-25 | 순차측면고상 결정화 기술을 이용한 비정질 실리콘층의결정화 방법 |
Country Status (2)
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US (2) | US20040106244A1 (ko) |
KR (1) | KR100496251B1 (ko) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI306988B (en) * | 2004-04-20 | 2009-03-01 | Toppoly Optoelectronics Corp | Method of improving polysilicon film crystallinity |
KR101368570B1 (ko) * | 2005-08-16 | 2014-02-27 | 더 트러스티이스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 | 박막의 고수율 결정화 |
KR101132404B1 (ko) * | 2005-08-19 | 2012-04-03 | 삼성전자주식회사 | 다결정 실리콘 박막의 제조 방법 및 이를 포함하는 박막트랜지스터의 제조 방법 |
WO2008150769A2 (en) * | 2007-05-31 | 2008-12-11 | Thinsilicon Corporation | Photovoltaic device and method of manufacturing photovoltaic devices |
KR100953657B1 (ko) * | 2007-11-13 | 2010-04-20 | 삼성모바일디스플레이주식회사 | 박막트랜지스터 및 그 제조방법과 이를 구비하는유기전계발광표시장치 |
KR102497781B1 (ko) * | 2017-09-29 | 2023-02-08 | 삼성디스플레이 주식회사 | 폴리실리콘층의 제조 방법 및 박막 트랜지스터 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000183358A (ja) * | 1998-07-17 | 2000-06-30 | Sony Corp | 薄膜半導体装置の製造方法 |
KR20010066251A (ko) * | 1999-12-31 | 2001-07-11 | 구본준, 론 위라하디락사 | 폴리실리콘 형성방법 |
KR20010087667A (ko) * | 2000-03-08 | 2001-09-21 | 구본준, 론 위라하디락사 | 박막트랜지스터형 어레이기판의 액티브층 제조방법 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH06208132A (ja) * | 1990-03-24 | 1994-07-26 | Sony Corp | 液晶表示装置 |
KR100292048B1 (ko) * | 1998-06-09 | 2001-07-12 | 구본준, 론 위라하디락사 | 박막트랜지스터액정표시장치의제조방법 |
TW457553B (en) * | 1999-01-08 | 2001-10-01 | Sony Corp | Process for producing thin film semiconductor device and laser irradiation apparatus |
KR100618184B1 (ko) * | 2003-03-31 | 2006-08-31 | 비오이 하이디스 테크놀로지 주식회사 | 결정화 방법 |
-
2002
- 2002-11-25 KR KR10-2002-0073554A patent/KR100496251B1/ko active IP Right Grant
-
2003
- 2003-11-21 US US10/717,676 patent/US20040106244A1/en not_active Abandoned
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2007
- 2007-07-03 US US11/822,297 patent/US7767558B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000183358A (ja) * | 1998-07-17 | 2000-06-30 | Sony Corp | 薄膜半導体装置の製造方法 |
KR20010066251A (ko) * | 1999-12-31 | 2001-07-11 | 구본준, 론 위라하디락사 | 폴리실리콘 형성방법 |
KR20010087667A (ko) * | 2000-03-08 | 2001-09-21 | 구본준, 론 위라하디락사 | 박막트랜지스터형 어레이기판의 액티브층 제조방법 |
Also Published As
Publication number | Publication date |
---|---|
US20070293024A1 (en) | 2007-12-20 |
US20040106244A1 (en) | 2004-06-03 |
US7767558B2 (en) | 2010-08-03 |
KR20040045705A (ko) | 2004-06-02 |
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