CN115763205A - 用于多前体流的半导体处理腔室 - Google Patents
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Abstract
公开了用于多前体流的半导体处理腔室。示例性半导体处理系统可以包括处理腔室，并且可以包括与所述处理腔室耦合的远程等离子体单元。示例性系统还可以包括与所述远程等离子体单元耦合的适配器。所述适配器可以包括第一端和与所述第一端相对的第二端。所述适配器可以限定通过所述适配器的中央通道。所述适配器可以在所述第二端处限定从第二通道的出口。所述中央通道、所述第二通道、和所述第三通道可以各自在所述适配器内互相流体隔离。
Description
本申请是申请日为2018年5月17日、申请号为“201810472445.8”、发明名称为“用于多前体流的半导体处理腔室”的发明专利申请的分案申请。
技术领域
本技术涉及半导体系统、工艺和设备。更具体地，本技术涉及用于在系统和腔室内递送前体的系统和方法。
背景技术
通过在基板表面上产生复杂图案化材料层的工艺而使集成电路成为可能。在基板上产生图案化材料需要用于去除暴露材料的受控的方法。化学蚀刻用于多种目的，包括将光刻胶中的图案转移到下面的层中，减薄层或减薄已经存在于表面上的特征的横向尺寸。通常期望具有比另一种材料更快地蚀刻一种材料的蚀刻处理，这有利于例如图案转移工艺或单独的材料去除。这种蚀刻工艺被称为对第一种材料是有选择性的。由于材料、电路和工艺的多样性，已经开发了对各种材料具有选择性的蚀刻工艺。
基于用于工艺的材料，蚀刻工艺可以被称为湿法或干法。湿法HF蚀刻优先去除其他电介质和材料上的氧化硅。然而，湿法工艺可能难以穿透某些受限制的沟槽，并且有时还可能使剩余材料变形。干法蚀刻工艺可以渗透到复杂的特征和沟槽中，但可能无法提供可接受的顶部到底部轮廓。随着下一代设备中设备尺寸的不断缩小，系统将前体递送进腔室并通过腔室的方式可能会产生越来越大的影响。由于处理条件的均匀性的重要性不断增加，腔室设计和系统设置可对生产的器件的质量起着重要的作用。
因此，需要可用于生产高质量器件和结构的改进的系统和方法。本技术解决了这些和其他需求。
发明内容
示例性半导体处理系统可以包括处理腔室，并且可以包括与处理腔室耦合的远程等离子体单元。示例性系统还可以包括与远程等离子体单元耦合的适配器。适配器可以包括第一端和与第一端相对的第二端。适配器可以限定穿过适配器的中央通道。适配器可以限定在第二端处从第二通道的出口，并且适配器可以限定在第二端处从第三通道的出口。中央通道、第二通道和第三通道可以各自在适配器内彼此流体隔离。
在一些实施例中，第二通道可以包括至少部分地延伸通过适配器的垂直横截面的第一环形通道，并且第二通道可以围绕中央通道来限定。适配器还可以限定位于适配器的外部的第一端口，并且第一端口可以被配置成提供到第二通道的流体通路。第三通道可以包括至少部分地延伸通过适配器的垂直横截面的第二环形通道，并且第三通道可以围绕第二通道来限定。适配器还可以限定位于适配器的外部的第二端口，并且第二端口可以被配置成提供到第三通道的流体通路。在一些实施例中，中央通道、第二通道和第三通道可以同心对准。该系统还可以包括耦合在适配器和远程等离子体单元之间的隔离器。在实施例中，隔离器可以是或包括陶瓷。该系统还可以包括耦合在适配器和处理腔室之间的混合歧管。混合歧管可以被表征为入口的直径大于或等于第三通道的外径。混合歧管的入口可以过渡为混合歧管的锥形部分。另外，混合歧管的锥形部分可以过渡为延伸到混合歧管的出口的混合歧管的扩口部分。
本技术还包括半导体处理系统，其可以包括远程等离子体单元。该系统还可以包括处理腔室。处理腔室可以包括限定中央通道的气体箱。处理腔室还可以包括与气体箱耦合的区隔板。区隔板可以限定穿过区隔板的多个孔。处理腔室还可以包括面板，该面板在面板的第一表面处与区隔板耦合。处理腔室还可以包括在面板的与面板的第一表面相对的第二表面处与面板耦合的离子抑制元件。
在一些实施例中，系统可以进一步包括加热器，该加热器围绕耦合至气体箱的混合歧管在外部耦合至气体箱。气体箱可以从上方限定第一容积，并且区隔板可以沿着第一容积的外径并且从下方限定第一容积。另外，面板可以从上方并且沿着第二容积的外径限定第二容积，并且离子抑制元件可以从下方限定第二容积。气体箱、区隔板、面板和离子抑制元件可以直接耦合在一起。系统还可以包括与远程等离子体单元耦合的适配器，其中适配器可以包括第一端和与第一端相对的第二端。适配器可以限定穿过适配器的中央通道，并且适配器可以限定在第二端处从第二通道的出口。适配器可以限定在适配器的第二端处从第三通道的出口，并且在一些实施例中，中央通道、第二通道和第三通道可各自在适配器内彼此流体隔离。在一些实施例中，离子抑制元件可以被配置为限制或减少递送到处理腔室的处理区域的离子物质。
本技术还包括通过半导体处理系统递送前体的方法。该方法可以包括在远程等离子体单元中形成含氟前体的等离子体。该方法可以包括使含氟前体的等离子体流出物流入适配器。该方法可以包括使含氢前体流入适配器。该方法还可以包括使第三前体流入适配器。适配器可以被配置成保持通过适配器流体隔离的含氟前体、含氢前体和第三前体的等离子体流出物。该方法还可以包括将含氟前体和含氢前体的等离子体流出物流入混合歧管，该混合歧管被配置为混合含氟前体和含氢前体的等离子体流出物。在一些实施例中，该方法可以进一步包括将含氟前体、含氢前体和第三前体的混合的等离子体流出物流入处理腔室。
这种技术可以提供优于传统系统和技术的许多益处。例如，通过具有多个旁通路径，可以在保护腔室部件降解的同时递送多种前体。另外，通过利用在腔室外部产生蚀刻剂物质的部件，可以在传统系统上更均匀地提供混合和递送至基板。结合以下描述和附图更详细地描述这些和其他实施例以及它们的许多优点和特征。
附图说明
参考说明书和附图的剩余部分可实现对公开的技术的本质与优点的进一步理解。
图1示出了根据本技术的实施例的示例性处理系统的俯视平面图。
图2A示出了根据本技术的实施例的示例性处理腔室的示意性横截面图。
图2B示出了根据本技术的实施例的示例性喷头的详细视图。
图3示出了根据本技术的实施例的示例性喷头的仰视平面图。
图4示出了根据本技术的实施例的示例性处理系统的示意性横截面图。
图5示出了根据本技术的实施例的入口适配器的示意性仰视部分平面图。
图6示出了根据本技术的实施例的通过处理腔室递送前体的方法的操作。
包括若干附图作为示意图。应理解，这些附图仅用于说明目的，并且除非特别声明按比例，否则不应被视为按比例。此外，作为示意图，提供这些附图是为了帮助理解，并且可以不包括与实际表示相比的所有方面或信息，并且出于说明目的而可以包括夸大的材料。
在附图中，类似部件和/或特征可具有相同的附图标记。此外，相同类型的各个部件可通过在附图标记后加上用于区分类似部件的字母来区分。如果在说明书中仅使用第一附图标记，则该描述适用于具有相同第一附图标记的任何一个类似部件而不管字母。
具体实施方式
本技术包括用于执行半导体制造操作的半导体处理系统、腔室和部件。在半导体制造期间执行的许多干法蚀刻操作可以涉及多种前体。当以各种方式通电和组合时，可将这些蚀刻剂递送至基板以去除或修改基板的各个方面。传统的处理系统可以以多种方式提供前体，诸如用于蚀刻。提供增强的前体或蚀刻剂的一种方式是在将前体通过处理腔室递送到诸如晶片等基板进行处理之前通过远程等离子体单元提供所有前体。然而，这个过程的一个问题是不同的前体可与不同的材料发生反应，这可导致对远程等离子体单元的损坏。例如，增强的含氟前体可以与铝表面反应，但不会与氧化物表面反应。增强的含氢前体可能不与远程等离子体单元内的铝表面反应，但可与氧化物涂层反应并去除氧化物涂层。因此，如果两种前体通过远程等离子体单元一起递送，那么它们可能会损坏单元内的涂层或衬里。
传统处理还可以通过用于等离子体处理的远程等离子体设备递送一种前体，并且可以将第二前体直接递送到腔室中。然而，该过程的问题在于前体的混合可能困难，可能无法提供对蚀刻剂产生的适当控制，并且可能不会在晶片或基板处提供均匀的蚀刻剂。这可以导致处理不能均匀地在基板的表面上执行，这可能在继续图案化和成形时导致器件问题。
本技术可以通过利用被配置成在将前体递送到腔室之前混合前体的部件和系统来克服这些问题，同时仅通过远程等离子体单元递送一种蚀刻剂前体，但是多种前体也可以流过远程等离子体单元，诸如载气或其他蚀刻剂前体。特定的旁通方案可以在将前体递送到处理腔室之前完全混合前体。这可以允许在保护远程等离子体单元的同时执行均匀的工艺。本技术的腔室还可以包括使通过腔室的热导率最大化的部件构造，并且通过以特定方式耦合部件来更便于维修。
虽然其余公开将通常规地识别利用所公开的技术的特定蚀刻处理，但容易理解的是，该系统和方法同样适用于可能在所述腔室中发生的沉积和清洁处理。因此，该技术不应该被认为是如此受限于仅用于蚀刻工艺。本公开将讨论可以与本技术一起使用以执行某些去除操作的一个可能的系统和腔室，然后根据本技术的实施例描述对这个系统的另外的变化和调整。
图1示出根据实施例的沉积、蚀刻、烘烤和固化腔室的处理系统100的一个实施例的俯视平面图。在该图中，一对前开式标准舱(FOUP)102提供各种大小的基板，这些基板由机器人臂104接收并且在放置到基板处理腔室108a-f中的一个之前放置在低压保持区域106中，基板处理腔室108a-f定位在串联区段109a-c中。第二机器人臂110可用于将基板晶片从保持区域106传输到基板处理腔室108a-f并返回。除了循环层沉积(CLD)、原子层沉积(ALD)、化学气相沉积(CVD)、物理气相沉积(PVD)、蚀刻、预清洗、脱气、定向和其他基板处理以外，可以配备每个基板处理腔室108a-f以执行多种基板处理操作，包括本文所述的干法蚀刻处理。
基板处理腔室108a-f可以包括用于在基板晶片上沉积、退火、固化和/或蚀刻介电膜的一个或多个系统部件。在一个配置中，可以使用两对处理腔室(例如，108c-d和108e-f)来在基板上沉积电介质材料，并且可以使用第三对处理腔室(例如，108a-b)来蚀刻沉积的电介质。在另一个配置中，所有三对腔室(例如，108a-f)可以被配置为蚀刻基板上的电介质膜。所述的任何一个或多个工艺可以在与不同实施例中所示的制造系统分离的腔室中执行。应理解，系统100可以设构想用于电介质膜的沉积、蚀刻、退火和固化腔室的附加配置。
图2A示出了处理腔室内具有分隔的等离子体产生区域的示例性工艺腔室系统200的横截面图。在膜蚀刻期间，例如氮化钛、氮化钽、钨、硅、多晶硅、氧化硅、氮化硅、氮氧化硅、碳氧化硅等，工艺气体可以通过气体入口组件205流入第一等离子体区域215。远程等离子体系统(RPS)201可以可选地包括在系统中，并且可以处理随后穿过气体入口组件205的第一气体。入口组件205可以包括两个或更多个不同的气体供应通道，其中第二通道(未示出)可以绕过RPS 201(如果包括的话)。
示出了冷却板203、面板217、离子抑制器223、喷头225和其上设置有基板255的基板支撑件265，并且它们各自可以根据实施例而被包括。基座265可以具有热交换通道，热交换流体流过该热交换通道以控制基板的温度，该基座可以在处理操作期间被操作以加热和/或冷却基板或晶片。可以包括铝、陶瓷或其组合的基座265的晶片支撑盘也可以通过使用嵌入式电阻加热器元件被电阻加热以实现相对高的温度，诸如从高达或约100℃至高于或约1100℃。
面板217可以是金字塔形、圆锥形或其他类似结构，其中窄顶部分扩展到宽底部分。如图所示，面板217可以另外是平坦的并且包括用于分配工艺气体的多个通道。取决于RPS 201的使用，等离子体产生气体和/或等离子体激发物质可以穿过面板217中的多个孔，如图2B所示，以更均匀地递送到第一等离子体区域215中。
示例性配置可以包括使气体入口组件205通向由面板217从第一等离子体区域215分隔开的气体供应区域258，使得气体/物质流过面板217中的孔进入第一等离子体区域215。可以选择结构和操作特征以防止等离子体从第一等离子体区域215显著回流回供应区域258、气体入口组件205和流体供应系统210。面板217或腔室的导电顶部以及喷头225示出为具有位于特征之间的绝缘环220，这允许AC电势相对于喷头225和/或离子抑制器223施加到面板217。绝缘环220可以被定位在面板217和喷头225和/或离子抑制器223之间，使得能够在第一等离子体区域中形成电容耦合等离子体(CCP)。挡板(未示出)可以附加地位于第一等离子体区域215中，或者以其他方式与气体入口组件205耦合，以影响流体通过气体入口组件205流入该区域。
离子抑制器223可以包括板或其他几何形状，板或其他几何形状在整个结构中限定多个孔，该多个孔被配置为抑制离子带电物质迁移出第一等离子体区域215，同时允许不带电荷的中性或自由基物质穿过离子抑制器223进入抑制器和喷头之间的活化气体递送区域。在实施例中，离子抑制器223可以包括具有多种孔配置的穿孔板。这些不带电荷的物质可以包括高度反应性的物质，这些物质通过孔与较少反应性载气一起传输。如上所述，离子物质通过孔的迁移可以被减少，并且在一些情况下可以完全被抑制。控制通过离子抑制器223的离子物质的量可以有利地提供对与底层晶片基板接触的气体混合物的增加的控制，这进而可以增加对气体混合物的沉积和/或蚀刻特性的控制。例如，气体混合物的离子浓度的调整可以显著改变其蚀刻选择性，例如，SiNx：SiOx蚀刻比率，Si：SiOx蚀刻比率等。在执行沉积的替代实施例中，也可以转换用于电介质材料的共形到可流动型沉积的平衡。
离子抑制器223中的多个孔可以被配置为控制活化气体即离子、自由基和/或中性物质通过离子抑制器223的通道。例如，孔的纵横比，或孔直径与长度的比，和/或孔的几何形状可以被控制使得通过离子抑制器223的活化气体中的离子带电物质的流动减少。离子抑制器223中的孔可以包括面向等离子体激发区域215的锥形部分以及面对喷头225的圆柱形部分。圆柱形部分可以被成形和设定尺寸以控制通过喷头225的离子物质的流动。作为控制通过抑制器的离子物质的流动的附加手段，还可以对离子抑制器223施加可调节的电偏压。
离子抑制器223可用于减少或消除从等离子体生成区域到基板的离子带电物质的量。不带电的中性和自由基物质仍然可以通过离子抑制器中的开口与基板反应。应注意，在实施例中可以不执行在基板周围的反应区域中完全消除离子带电物质。在某些实例中，离子物质旨在到达基板以执行蚀刻和/或沉积处理。在这些实例中，离子抑制剂可以有助于控制反应区中的离子物质浓度在有助于工艺的水平。
与离子抑制器223结合的喷头225可允许存在于第一等离子体区域215中的等离子体直接避免激发基板处理区域233中的气体，同时仍允许激发物质从腔室等离子体区域215行进到基板处理区域233中。以这种方式，腔室可以被配置成防止等离子体接触正被蚀刻的基板255。这可以有利地保护基板上图案化的各种复杂结构和膜，如果直接与生成的等离子体接触，这些结构和膜可能会被损坏，错位或扭曲。此外，当允许等离子体接触基板或接近基板水平时，氧化物物质蚀刻的速率可能增加。因此，如果暴露区域的材料是氧化物，则可以通过将等离子体保持远离基板来进一步保护该材料。
处理系统可以进一步包括与处理腔室电耦合的电源240，以向面板217、离子抑制器223、喷头225和/或基座265提供电力以在第一等离子体区域215或处理区域233中产生等离子体。电源可以被配置成取决于执行的工艺向腔室递送可调节的量的功率。这种配置可以允许可调等离子体用于正在执行的工艺中。与通常具有开或关功能的远程等离子体单元不同，可调等离子体可以被配置成向等离子体区域215递送特定量的功率。这进而可以允许形成特定的等离子体特性，使得前体可以以特定方式分离以增强由这些前体产生的蚀刻分布。
等离子体可以在喷头225上方的腔室等离子体区域215或喷头225下方的基板处理区域233中点燃。在实施例中，在基板处理区域233中形成的等离子体可以是利用充当电极的基座形成的DC偏压等离子体。等离子体可以存在于腔室等离子体区域215中以由例如含氟前体或其他前体的流入产生自由基前体。典型地在射频(RF)范围内的AC电压可以被施加在处理腔室的导电顶部部分(诸如面板217)和喷头225和/或离子抑制器223之间以在沉积期间点燃腔室等离子体区域215中的等离子体。RF电源可以产生13.56MHz的高RF频率，但也可以单独或与13.56MHz频率组合产生产生其他频率。
图2B示出影响通过面板217的处理气体分布的特征的详细视图253。如图2A和2B所示，面板217、冷却板203和气体入口组件205相交以限定气体供应区域258，工艺气体可从气体入口205递送到该气体供应区域258中。气体可填充气体供应区域258并穿过面板217中的孔259流动至第一等离子体区域215。孔259可以被配置成以基本上单向的方式引导流动，使得工艺气体可流入处理区域233中，但可以部分或完全防止在穿越面板217之后回流至气体供应区域258中。
用于处理腔室部分200的诸如喷头225的气体分配组件可以被称为双通道喷头(DCSH)，并且在图3中描述的实施例中另外详述。双通道喷头可以提供蚀刻处理，从而允许在处理区域233外的蚀刻剂在被递送到处理区域之前分离，以提供与腔室部件和彼此的受限相互作用。
喷头225可以包括上部板214和下部板216。板可以彼此耦合以限定板之间的容积218。板的耦合可以是使得提供穿过上部板和下部板的第一流体通道219和穿过下部板216的第二流体通道221。形成的通道可以被配置为提供仅通过第二流体通道221从容积218穿过下部板的流体通路，并且第一流体通道219可以与板和第二流体通道221之间的容积218流体隔离。可以通过气体分配组件225的一侧流体地通入容积218。
图3是根据实施例的与处理腔室一起使用的喷头325的仰视图。喷头325可以与图2A中所示的喷头225相对应。示出第一流体通道219的视图的通孔365可以具有多个形状和构造，以控制和影响前体通过喷头225的流动。示出了第二流体通道221的视图的小孔375可以基本均匀地分布在喷头的表面上，甚至在通孔365之间，并且可以有助于在前体离开喷头时提供比其他配置更均匀的前体混合。
图4示出了根据本技术的实施例的示例性处理系统100的示意性横截面图。系统400可以包括图2中所示的腔室的变型，并且可以包括在图2中示出的一些或全部的部件。系统400可以包括处理腔室405和远程等离子体单元410。远程等离子体单元410可以通过一个或多个部件与处理腔室405耦合。远程等离子体单元410可以与远程等离子体单元适配器415、隔离器420、压力板425、和入口适配器430、扩散器435、或混合歧管440中的一个或多个耦合。混合歧管440可以与处理腔室405的顶部耦合，并且可以与处理腔室405的入口耦合。
远程等离子体单元适配器415可以在第一端411处与远程等离子体单元410耦合，并且可以在与第一端411相对的第二端412处与隔离器420耦合。通过远程等离子体单元适配器415可以限定一个或多个通道。在第一端411处可以限定到通道413的开口或端口。通道413可以在远程等离子体单元适配器415内被居中限定，并且可以表征为在垂直于通过远程等离子体单元适配器415的中心轴线的方向上的第一横截面表面积，通道413可以在远程等离子体单元410的流动方向上。通道413的直径可以与来自远程等离子体单元410的出口端相等或一样。通道413可以表征为从第一端411到第二端412的长度。通道413可以延伸穿过远程等离子体单元适配器415的整个长度，或者小于从第一端411到第二端412的长度。例如，通道413可以延伸小于从第一端411到第二端412的长度的一半，通道413可以延伸从第一端411到第二端412的长度的一半，通道413可延伸超过从第一端411到第二端412的长度的一半，或通道413可以延伸从远程等离子体单元适配器415的第一端411到第二端412的长度的大约一半。
远程等离子体单元适配器415还可以限定在远程等离子体单元适配器415下方限定的一个或多个沟槽414。沟槽414可以是或包括限定在远程等离子体单元适配器415内的一个或多个环形凹槽，以允许O形环或弹性体元件就位，这可以允许与隔离器420耦合。
在实施例中，隔离器420可以与远程等离子体单元适配器415的第二端412耦合。隔离器420可以是或包括围绕隔离器通道421的环形构件。隔离器通道421可以在流过远程等离子体单元适配器415的流动方向上与中心轴线轴向对齐。隔离器通道421可以表征为在与通过隔离器420的流动方向垂直的方向上的第二横截面面积。第二横截面积可以等于、大于或小于通道413的第一横截面积。在实施例中，隔离器通道421可以被表征为大于、等于或约等于通过远程等离子体单元适配器415的通道413的直径的直径。
隔离器420可以由与远程等离子体单元适配器415、混合歧管440或任何其他腔室部件相似或不同的材料制成。在一些实施例中，虽然远程等离子体单元适配器415和混合歧管440可以由铝制成或包括铝，包括铝的氧化物，在一个或多个表面上的经处理的铝或一些其他材料，隔离器420可以是或包括导热性比其他腔室组件低的材料。在一些实施例中，隔离器420可以是或包括被配置为在远程等离子体单元410和腔室405之间提供隔中断的陶瓷、塑料或其它隔热部件。在操作期间，远程等离子体单元410可以被冷却或在相对于腔室405较低的温度操作，而腔室405可以被加热或在相对于远程等离子体单元410较高的温度下操作。提供陶瓷或绝热隔离器420可以防止或限制部件之间的热、电或其他干扰。
与隔离器420耦合的可以是压力板425。在实施例中，压力板425可以是或包括铝或另一种材料，并且在实施例中，压力板425可以由与远程等离子体单元适配器415或混合歧管440相似或不同的材料制成或包括与远程等离子体单元适配器415或混合歧管440相似或不同的材料。压力板425可以限定穿过压力板425的中心孔423。中心孔423可表征为通过压力板425从靠近隔离器通道421的部分到压力板425的相对侧的锥形形状。中心孔423接近隔离器通道421的部分可以表征为垂直于流动方向的横截面积，与隔离器通道421的横截面积相等或相似。在实施例中，中央孔423可以表征为跨压力板425的长度大于或大约10％的锥度百分比，并且可以表征为大于或约20％大于或约30％、大于或约40％、大于或约50％、大于或约60％、大于或约70％、大于或约80％、大于或约90％、大于或约100％、大于或约150％、大于或约200％、大于或约300％，或更大的锥度百分比。压力板425还可以限定在隔离器420下方限定的一个或多个沟槽424。沟槽424可以是或包括限定在压力板425内的一个或多个环形凹槽，以允许O形环或弹性体元件的密封，这可以允许与隔离器420耦合。
入口适配器430可以在第一端426处与压力板425耦合并且在与第一端426相对的第二端427处与扩散器435耦合。入口适配器430可以限定穿过入口适配器430限定的中央通道428。中央通道428可以表征为第一部分429a和第二部分429b。第一部分429a可以从第一端426通过入口适配器430延伸到第一长度，其中中央通道428可以过渡为第二部分429b，该第二部分429b可以延伸到第二端427。第一部分429a可以表征为第一横截面积或直径，并且第二部分429b可以表征为比第一部分小的第二横截面积或直径。在实施例中，第一部分429a的横截面积或直径可以是第二部分429b的横截面积或直径的两倍，并且可以高达或大于约三倍大、大于或大约4倍大、大于或约5倍大、大于或大约6倍大、大于或大约7倍大、大于或大约8倍大、大于或大约9倍大、大于或大约10倍大或在一些实施例中更大。在实施例中，中央通道428可以被配置成提供从远程等离子体单元410递送的前体的等离子体流出物，前体可以穿过远程等离子体单元适配器415的通道413，隔离器420的隔离器通道421和压力板425的中心孔423。
入口适配器430还可以限定一个或多个第二通道431，第二通道431可以从第一部分429a下方延伸到或通过第二端427。第二通道431可以表征为在垂直于通过入口适配器430的中央轴的方向上的第二横截面表面积。在实施例中，第二横截面表面积可以小于第一部分429a的横截面表面积，并且可以大于第二部分429b的横截面表面积或直径。第二通道431可以延伸到在第二端427处从入口适配器430的出口，并且可以提供用于从远程等离子体单元410交替递送的诸如第一旁通前体的前体从适配器430的外出。例如，第二通道431可以从沿入口适配器430的外表面(诸如侧面)限定的第一端口432流体通入，从而可以绕过远程等离子体单元410。第一端口432可以沿着入口适配器430的长度位于第一部分429a处或在第一部分429a下方，并且可以被配置成提供到第二通道431的流体通路。
第二通道431可以递送通过入口适配器430的前体并输出第二端427。第二通道431可限定在入口适配器430的第一部分429a与第二端427之间的区域中。在实施例中，第二通道431可以不能从中央通道428通入。第二通道431可以被配置成保持与从远程等离子体单元410递送到中央通道428中的等离子体流出物流体隔离的前体。第一旁通前体可以不接触等离子体流出物直到通过第二端427离开入口适配器430。第二通道431可以包括在适配器430中限定的一个或多个通道。第二通道431可以居中位于适配器430内，并且可以与中央通道428相关联。例如，在实施例中，第二通道431可以同心对准中央通道428并且限定在中央通道428周围。在实施例中，第二通道431可以是部分地延伸通过入口适配器430的长度或垂直横截面的环形或圆柱形通道。在一些实施例中，第二通道431也可以是围绕中央通道428径向延伸的多个通道。
入口适配器430还可以限定一个或多个第三通道433，第三通道433可从第一部分429a下方延伸到第二端427或通过第二端427，并且可从平分第一端口432的平面下方延伸。第三通道433可以表征为在垂直于通过入口适配器430的中央轴的方向上的第三横截面表面积。在实施例中，第三横截面表面积可以小于第一部分429a的横截面表面积，并且可以大于第二部分429b的横截面表面积或直径。如图所示，第三横截面表面积也可以等于或约等于第一部分429a的横截面表面积或直径。例如，第三通道433的外径可以等于第一部分429a的外径，或者可以小于第一部分429a的外径。第三通道433可以延伸到在第二端427处从入口适配器430的出口，并且可以提供用于从远程等离子体单元410交替递送的诸如第二旁通前体的前体从适配器430的外出。例如，第三通道433可以从沿入口适配器430的外表面(诸如侧面)限定的第二端口434流体通入，从而可以绕过远程等离子体单元410。第二端口434可以位于入口适配器430的与第一端口432相对的侧或部分上。第二端口434可以沿着入口适配器430的长度位于第一部分429a处或在第一部分429a下方，并且可以被配置成提供到第三通道433的流体通路。在实施例中，第二端口434也可以沿着入口适配器430的长度位于第一端口432处或第一端口432的下方。
第三通道433可以递送通过入口适配器430的第二旁通前体并且输出第二端427。第三通道433可限定在入口适配器430的第一部分429a与第二端427之间的区域中。在实施例中，第三通道433可以不能从中央通道428通入。第三通道433可以被配置成保持与从远程等离子体单元410递送到中央通道428中的等离子体流出物，和从通过第一端口432递送到第二通道431中的第一旁通前体流体隔离的第二旁通前体。第二旁通前体可以不接触等离子体流出物或第一旁通前体直到通过第二端427离开入口适配器430。第三通道433可以包括在适配器430中限定的一个或多个通道。第三通道433可以居中位于适配器430内，并且可以与中央通道428和第二通道431相关联。例如，在实施例中，第三通道433可以同心地对准中心通道428并且限定在中心通道428周围，并且可以同心对准第二通道431并限定在第二通道431周围。在实施例中，第三通道433可以是部分地延伸通过入口适配器430的长度或垂直横截面的第二环形通道或圆柱形通道。在一些实施例中，第三通道433也可以是围绕中央通道428径向延伸的多个通道。
扩散器435可以定位在入口适配器430和混合歧管440之间，以保持通过入口适配器430递送的前体被流体隔离直到通入混合歧管440。扩散器435可以表征为一个或多个通道，诸如限定为通过扩散器435的圆柱形或环形通道。在实施例中，扩散器435可以限定第一通道436或中央通道、第二通道437和第三通道438。通道可以表征为与中央通道428的第二部分429b、第二通道431和入口适配器430的第三通道433相似的尺寸或直径。例如，每个通道可以将入口适配器通道延伸到混合歧管440。第二通道437和第三通道438每个可以是限定在第一通道436周围的环形通道，并且在实施例中，第一通道436、第二通道437和第三通道438可以同心对准并且限定在扩散器435周围。
扩散器435可以另外限定围绕扩散器435的一个或多个沟槽439。例如，在实施例中，扩散器435可以限定第一沟槽439a、第二沟槽439b和第三沟槽439c，这可以允许将O形环或弹性体构件置于入口适配器430和扩散器435之间。沟槽439中的每一个可以是位于通过扩散器435限定的通道中的一个或多个通道的径向外部的实施例中的环形沟槽。第一沟槽439a可以位于第一通道436的径向外侧，并且可以位于第一通道436和第二通道437之间。第二沟槽439b可以位于第二通道437的径向外侧，并且可以位于第二通道437和第三通道438之间。第三沟槽439c可以位于第三通道438的径向外侧。每个沟槽439的直径可以大于沟槽可以相关联的通道并且沟槽可以位于径向外部。沟槽可以实现入口适配器430和扩散器435之间的改进的密封，以确保前体在部件之间保持流体隔离，并且不会发生通道之间的泄漏。
混合歧管440可以在第一端部441处与扩散器435耦合，并且可以在第二端部442处与腔室405耦合。混合歧管440可以在第一端部441处限定入口443。入口443可以提供来自扩散器435的流体通路，并且入口443可以表征为等于或约等于通过扩散器435的第三通道438的直径的直径。入口443可以限定穿过混合歧管440的通道444的部分，并且通道444可以由一个或多个限定通道444的轮廓的部分构成。入口443可以是在通过混合歧管440的通道444的流动方向上的第一部分。入口443可以表征为可以小于在混合歧管440的流量方向上的长度的一半的长度。在实施例中，入口443的长度也可以小于混合歧管440的长度的三分之一，并且可以小于混合歧管440的长度的四分之一。入口443可以接收来自扩散器435的每个前体，并且可以允许前体的混合，前体可以被保持流体隔离直到递送到混合歧管440。
入口443可以延伸到通道444的第二部分，通道444可以是锥形部分445或包括锥形部分445。锥形部分445可以从等于或类似入口443的直径的第一直径延伸到小于第一直径的第二直径。在一些实施例中，第二直径可以是约为第一直径的一半或小于第一直径的一半。在实施例中，锥形部分445可以表征为大于或大约10％、大于或约20％、大于或约30％、大于或约40％、大于或约50％、大于或约60％、大于或约70％、大于或约80％、大于或约90％、大于或约100％、大于或约150％、大于或约200％、大于或约300％，或更大的锥度百分比。
锥形部分445可以过渡到通道444的第三区域，第三区域可以是扩口部分446。扩口部分446可以从锥形部分445延伸到混合歧管440在第二端442处的出口。扩口部分446可以从等于锥形部分445的第二直径的第一直径延伸至大于第一直径的第二直径。在一些实施例中，第二直径可以是约为第一直径的两倍或大于第一直路径的两倍。在实施例中，扩口部分446可以表征为大于或大约10％、大于或约20％、大于或约30％、大于或约40％、大于或约50％、大于或约60％、大于或约70％、大于或约80％、大于或约90％、大于或约100％、大于或约150％、大于或约200％、大于或约300％，或更大的张角百分比。
扩口部分446可以为通过混合歧管440通过第二端442经由出口447递送的前体提供出口。通过混合歧管440的通道444的部分可以被配置成在将混合前体提供给腔室405之前提供递送到混合歧管的前体的充分或彻底的混合。与常规技术不同，通过在递送到腔室之前执行蚀刻剂或前体混合，本系统可在分布在腔室和基板周围之前提供具有均匀性质的蚀刻剂。以此方式，利用本技术执行的过程可以在基板表面上具有更均匀的结果。
腔室405可以包括堆叠布置的多个部件。腔室堆叠可以包括气体箱450、区隔板460、面板470、离子抑制元件480和盖间隔件490。这些部件可以用于将前体或前体组穿过腔室分布以提供蚀刻剂或其他前体到用于处理的基板的均匀递送。在实施例中，这些部件可以是堆叠板，每个堆叠板至少部分地限定腔室405的外部。
气体箱450可以限定腔室入口452。中央通道454可以被限定为穿过气体箱450以将前体递送到腔室405中。入口452可以与混合歧管440的出口447对准。入口452和/或中央通道454可以表征为在实施例中相似的直径。中央通道454可以延伸通过气体箱450并且被配置为将一种或多种前体递送到由气体箱450从上方限定的容积457中。气体箱450可以包括第一表面453(诸如顶表面)和与第一表面453相对的第二表面455(诸如，气体箱450的底表面)。在实施例中，顶表面453可以是平面或基本平坦的表面。与顶表面453耦合的可以是加热器448。
在实施例中，加热器448可以被配置为加热腔室405，并且可以热传导地加热每个盖堆叠部件。加热器448可以是任何种类的加热器，包括流体加热器、电加热器、微波加热器或被配置成将热传导地将热传递到腔室405的其它设备。在一些实施例中，加热器448可以是或包括以围绕气体箱450的第一表面453的环形图案形成的电加热器。加热器可被限定为跨过气体箱450并围绕混合歧管440。加热器可以是板式加热器或电阻元件加热器，可以被配置成提供高达、大约或大于约2,000W的热量，并且可以被配置成提供大于或约2,500W、大于或约3,000W、大于或约3,500W、大于或约4,000W、大于或约4,500W、大于或约5,000W或更多。
在实施例中，加热器448可以被配置成产生高达、大约或大于约50℃的可变腔室部件温度，并且可以被配置为产生大于或约75℃、大于或约100℃、大于或约150℃、大于或约200℃、大于或约250℃、大于或约300℃或更高的腔室部件温度。加热器448可以被配置成将诸如离子抑制元件480的单独部件升高到这些温度中的任何一个以促进诸如退火的处理操作。在一些处理操作中，基板可以朝向离子抑制元件480升高以用于退火操作，并且可调节加热器448以将加热器的温度热传导地升高至上文所述的任何特定温度，或任何规定的温度内或温度之间的任何范围的温度内。
气体箱450的第二表面455可以与区隔板460耦合。区隔板460可以表征为与气体箱450的直径相等或相似的直径。区隔板460可以限定穿过区隔板460的多个孔463，仅示出了样品，这些孔可以允许来自容积457的前体(例如蚀刻剂)的分布，并且可以开始通过腔室405分布前体以均匀地递送至基板。尽管仅示出了一些孔463，但应理解，区隔板460可以具有限定穿过该结构的任何数量的孔463。区隔板460可以表征为在区隔板460的外径处的凸起环形部分465，和区隔板460的外径处的下降环形部分466。在实施例中，凸起环形部分465可以为区隔板460提供结构刚度并且可以限定容积457的侧面或外径。区隔板460也可以从下方限定容积457的底部。容积457可以允许前体在经过区隔板460的孔463之前从气体箱450的中央通道454分布。在实施例中，下降环状部分466还可以为区隔板460提供结构刚性，并且可以限定第二容积458的侧面或外径。区隔板460也可以从上方限定容积458的顶部，而容积458的底部可以从下方由面板470限定。
面板470可以包括第一表面472和与第一表面472相对的第二表面474。面板470可以在第一表面472处与区隔板460耦合，第一表面472可以接合区隔板460的下降环形部分466。面板470可以在第二表面474的内部限定凸缘473，该凸缘473延伸至至少部分地限定在面板470内或由面板470限定的第三容积475。例如，面板470可以限定第三容积475的侧面或外径以及从上方限定容积475的顶部，而离子抑制元件480可以从下方限定第三容积475。尽管在图4中未示出，但面板470可以限定通过面板的多个通道，诸如先前关于腔室200所述。
离子抑制元件480可以被定位成靠近面板470的第二表面474，并且可以在第二表面474处与面板470耦合。离子抑制元件480可以类似于上述的离子抑制器223，并且可以被配置成减少离子迁移进入容纳基板的腔室405的处理区域中。离子抑制元件480可以限定穿过如图2所示的结构的多个孔，尽管图4中未示出。在实施例中，气体箱450、区隔板460、面板470和离子抑制元件480可以耦合在一起，并且在实施例中可以直接耦合在一起。通过直接耦合这些部件，由加热器448产生的热量可以通过这些部件传导，以保持特定的腔室温度，这可以保持部件之间较少的变化。离子抑制元件480还可以接触盖间隔件490，它们一起可以至少部分地限定在处理期间保持基板的等离子体处理区域。
转到图5，示出了根据本技术的实施例的入口适配器500的仰视局部平面图。在实施例中，入口适配器500可以类似于入口适配器430。如所示，入口适配器可以包括围绕入口适配器500的中心轴线同心对准的三个通道。应理解，在其他实施例中，入口适配器500可以包括比图示更多或更少的通道。入口适配器500可以包括中央通道505，中央通道505可以如前所述从远程等离子体单元流体地通入。中央通道505可以完全延伸穿过入口适配器500。第二通道510可以围绕中央通道505延伸，并且可以为第一旁通前体提供流体通路，附加于或替代通过中央通道505的前体的等离子体流出物递送该第一旁通前体。第二通道510可以是从沿着入口适配器500的外部限定的第一端口512通入。第二通道510可以与中心通道505同心对准，并且可以保持与等离子体流出物或流经中央通道505的不同前体流体隔离的第一旁通前体。
第三通道515可以围绕中央通道505和第二通道510延伸，并且可以为第二旁通前体提供流体通路，附加于或替代通过中央通道505的前体的等离子体流出物和通过第二通道的第一旁通前体递送该第二旁通前体。第三通道515可以从沿入口适配器500的外部限定的第二端口517通入，第二端口517可以位于入口适配器500的与第一端口512相对的一侧上。第二端口517以及第三通道515可以位于通过第一端口512的水平面下方。第三通道515可以与中央通道505同心对准，并且可以保持与流经中央通道505的等离子体流出物或不同前体和通过第二通道510递送的第一旁通前体流体隔离的第二旁通前体。
在实施例中，第二通道510和第三通道515两者都可以是至少部分地穿过入口适配器500的长度限定的环形通道。通道还可以是围绕中心通道505径向限定的多个通道。通过为前体提供三个单独的路径，可以使用前体的不同容积和/或流速，从而提供对前体递送和蚀刻剂生成的更大控制。每个前体可以与一种或多种载气一起递送，并且显影的蚀刻剂可以在被递送到与入口适配器500流体耦合的处理腔室中之前被微调。
图6示出了根据本技术的实施例的通过处理腔室递送前体的方法600的操作。方法600可以在腔室200或腔室405中执行，并且可以允许在腔室外部的改进的前体混合，同时保护部件免受蚀刻剂损伤。尽管腔室的部件可能暴露于蚀刻剂，随着时间推移可能引起磨损，但是本技术可以将这些部件限制为可以更容易替换和维修的那些。例如，本技术可以限制远程等离子体单元的内部部件的暴露，这可以允许将特定保护应用于远程等离子体单元。
方法600可以包括在操作605中形成含氟前体的远程等离子体。可以将前体递送至远程等离子体单元以解离以产生等离子体流出物。在实施例中，远程等离子体单元可以涂覆或衬有可承受与含氟流出物接触的氧化物或其他材料。在实施例中，除了载气之外，不通过远程等离子体单元递送其他蚀刻剂前体，这可以保护单元免受损坏。被配置为产生不同蚀刻剂的等离子体流出物的其他实施例可以被衬有可能对该前体或前体的组合为惰性的不同材料。
在操作610，含氟前体的等离子体流出物可以流入与远程等离子体单元耦合的适配器中。在操作615，含氢前体可以流入适配器中。适配器可配置成保持通过适配器流体隔离的含氟前体和含氢前体的等离子体流出物。在操作620，第三前体可以流入适配器中。第三前体可以包括另外的含氢前体，另外的含卤素前体或前体的其他组合。适配器可以被配置成保持通过适配器流体隔离的含氟前体、含氢前体和第三前体的等离子体流出物。
在操作625，含氟前体和含氢前体的等离子体流出物可以流入混合歧管，该混合歧管被配置成在将产生的混合的前体或蚀刻剂递送到半导体处理腔室中之前混合含氟前体、含氢前体和第三前体的等离子体流出物。如前所述，可以使用别处描述的附加部件来控制蚀刻剂的递送和分配。应理解，所标识的前体仅仅是用于所述腔室中的合适前体的示例。整个公开讨论的腔室和材料可以用于任何数量的其他处理操作，这些处理操作可以受益于分离前体并在将其递送到处理腔室中之前将它们混合。
在之前的描述中，出于解释的目的，已经阐述了许多细节以提供对本技术的各种实施例的理解。然而，对本领域技术人员将显而易见的是，没有这些细节中的一些或有附加细节也可实践某些实施例。
已公开了数个实施例，本领域技术人员会理解，可使用多种修改、替代配置、以及等同体而不背离实施例的精神。另外，许多公知的工艺和要素未被描述以免不必要地模糊本技术。因此，上面的描述不应当被认为是限制本技术的范围。
在提供值的范围的情况下，要理解，除非上下文另有明确规定，否则在该范围的上限和下限之间的每个中间值，特别是下限单位的最小部分亦被具体公开。在阐明的范围中的任何阐明的值或未阐明的中间值之间的任何较窄范围以及该阐明的范围中的任何其他阐明值或中间值被涵盖。这些较小范围的上限和下限可以独立地被包括在该范围中或排除在外，并且其中在该较小范围中包括任一限值、不包括任一限值或包括两个限值的每一个范围亦被涵盖在本技术内，受限于所阐明的范围中的任何具体排除的限值。在所阐明的范围包括限值中的一个或两个的情况下，排除这些被包括的限值中的任一个或两个限值的范围亦被包括。
除非上下文中另外明确指明，否则如在本文和所附权利要求书中所使用的，单数形式的“一种”、“一个”以及“所述”包括复数指代。因此，例如，对“一层”的引用包括多个这样的层，而对“该前体”的引用包括对本领域技术人员已知的一种或多种前体及其等同物的引用，等等。
此外，说明书和权利要求书中所使用的词语“包括”、“包含”等用于表示存在所述的特征、整体、部件、或操作，但是它们并不排除一个或多个其它的特征、整体、部件、操作、动作、或组的存在或添加。
Claims (20)
1.一种半导体处理系统部件，包括：
适配器，所述适配器包括第一端和与所述第一端相对的第二端，其中所述适配器限定通过所述适配器的中央通道，其中所述适配器在所述第二端处限定从第二通道的出口，其中所述适配器在所述适配器的所述第二端处限定从第三通道的出口，并且其中所述中央通道、所述第二通道、和所述第三通道各自在所述适配器内互相流体隔离。
2.如权利要求1所述的半导体处理系统部件，其中所述第二通道包括第一环形通道，所述第一环形通道至少部分地延伸通过所述适配器的垂直横截面，并且其中所述第二通道被限定为围绕所述中央通道。
3.如权利要求2所述的半导体处理系统部件，其中所述适配器进一步限定第一端口，所述第一端口沿着所述适配器的外部定位并且被配置成提供到所述第二通道的流体通路。
4.如权利要求3所述的半导体处理系统部件，其中所述第三通道包括第二环形通道，所述第二环形通道至少部分地延伸通过所述适配器的垂直横截面，并且其中所述第三通道被限定为围绕所述第二通道。
5.如权利要求4所述的半导体处理系统部件，其中所述第一环形通道通过所述适配器延伸比所述第二环形通道更大的垂直距离。
6.如权利要求4所述的半导体处理系统部件，其中所述中央通道、所述第二通道和所述第三通道同心对准。
7.如权利要求4所述的半导体处理系统部件，其中适配器进一步限定第二端口，所述第二端口沿着所述适配器的外部定位并且被配置成提供到所述第三通道的流体通路。
8.如权利要求7所述的半导体处理系统部件，其中所述第二端口从所述第一端口沿着所述适配器的外部垂直偏离。
9.如权利要求7所述的半导体处理系统部件，其中所述第一端口和所述第二端口位于通过所述适配器的直径的相对端。
10.如权利要求1所述的半导体处理系统部件，其中所述中央通道由所述适配器的所述第一端处的第一直径表征，并且其中所述中央通道由所述适配器的所述第二端处的第二直径表征，所述第二直径与所述第一直径不同。
11.如权利要求10所述的半导体处理系统部件，其中所述中央通道由沉头孔或埋头孔轮廓表征。
12.如权利要求10所述的半导体处理系统部件，其中所述第二通道包括由外部环形直径表征的环形通道，并且其中所述第二通道的所述外部环形直径小于所述中央通道的所述第一直径。
13.如权利要求10所述的半导体处理系统部件，其中所述第三通道包括由外部环形直径表征的环形通道，并且其中所述第三通道的所述外部环形直径小于所述中央通道的所述第一直径。
14.如权利要求10所述的半导体处理系统部件，其中所述第二通道包括环形通道，其中所述第三通道包括环形通道，并且其中所述第二通道和第三通道各自从所述适配器的所述第二端朝向所述适配器的第一端通过所述适配器垂直延伸至小于在所述中央通道的过渡处通过所述适配器的水平面的高度，所述中央通道的过渡在由所述第一直径表征的所述中央通道的部分和由所述第二直径表征的所述中央通道的部分之间。
15.如权利要求1所述的半导体处理系统部件，其中适配器由所述适配器的所述第一端处的第一外径表征，其中所述适配器由所述适配器的所述第二端处的第二外径表征，并且其中所述第二外径小于所述第一外径。
16.一种半导体处理腔室部件，包括：
适配器，所述适配器包括第一端和与所述第一端相对的第二端，其中所述适配器限定通过所述适配器的中央通道，其中所述适配器在所述第二端处限定从第二通道的出口，其中所述适配器在所述适配器的所述第二端处限定从第三通道的出口，其中所述中央通道、所述第二通道、和所述第三通道各自在所述适配器内互相流体隔离，并且其中所述第二通道包括至少部分地延伸通过所述适配器的垂直横截面的第一环形通道，并且其中所述第二通道被限定为围绕所述中央通道。
17.如权利要求16所述的半导体处理腔室部件，其中所述适配器进一步限定第一端口，所述第一端口沿着所述适配器的外部定位并且被配置成提供到所述第二通道的流体通路。
18.如权利要求17所述的半导体处理腔室部件，其中所述第三通道包括第二环形通道，所述第二环形通道至少部分地延伸通过所述适配器的垂直横截面，并且其中所述第三通道被限定为围绕所述第二通道。
19.如权利要求18所述的半导体处理腔室部件，其中所述第一环形通道通过所述适配器延伸比所述第二环形通道更大的垂直距离。
20.一种半导体处理腔室部件，包括：
适配器，所述适配器包括第一端和与所述第一端相对的第二端，其中所述适配器限定通过所述适配器的中央通道，其中所述中央通道由沉头孔或埋头孔轮廓表征，其中所述适配器在所述第二端处限定从第二通道的出口，其中所述适配器在所述适配器的所述第二端处限定从第三通道的出口，并且其中所述中央通道、所述第二通道、和所述第三通道各自在所述适配器内互相流体隔离。
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| US11276559B2 (en) | 2022-03-15 |
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