TW201806082A - 在基板中形成通孔的物件及方法 - Google Patents

在基板中形成通孔的物件及方法 Download PDF

Info

Publication number
TW201806082A
TW201806082A TW106118017A TW106118017A TW201806082A TW 201806082 A TW201806082 A TW 201806082A TW 106118017 A TW106118017 A TW 106118017A TW 106118017 A TW106118017 A TW 106118017A TW 201806082 A TW201806082 A TW 201806082A
Authority
TW
Taiwan
Prior art keywords
substrate
glass
mask
carrier
dlc
Prior art date
Application number
TW106118017A
Other languages
English (en)
Inventor
羅伯特艾倫 貝爾曼
士文 劉
Original Assignee
康寧公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 康寧公司 filed Critical 康寧公司
Publication of TW201806082A publication Critical patent/TW201806082A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/486—Via connections through the substrate with or without pins
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/60—Deposition of organic layers from vapour phase
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B3/00—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form
    • B32B3/26—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B33/00—Layered products characterised by particular properties or particular surface features, e.g. particular surface coatings; Layered products designed for particular purposes not covered by another single class
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/28—Surface treatment of glass, not in the form of fibres or filaments, by coating with organic material
    • C03C17/30—Surface treatment of glass, not in the form of fibres or filaments, by coating with organic material with silicon-containing compounds
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
    • C03C23/0005—Other surface treatment of glass not in the form of fibres or filaments by irradiation
    • C03C23/0025—Other surface treatment of glass not in the form of fibres or filaments by irradiation by a laser beam
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49838—Geometry or layout
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D2203/00—Other substrates
    • B05D2203/30—Other inorganic substrates, e.g. ceramics, silicon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D2203/00—Other substrates
    • B05D2203/30—Other inorganic substrates, e.g. ceramics, silicon
    • B05D2203/35—Glass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/007—After-treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/06—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/10—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by other chemical means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/10—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by other chemical means
    • B05D3/107—Post-treatment of applied coatings
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/54—Glass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B3/00—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form
    • B32B3/26—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer
    • B32B3/266—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer characterised by an apertured layer, the apertures going through the whole thickness of the layer, e.g. expanded metal, perforated layer, slit layer regular cells B32B3/12
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2204/00—Glasses, glazes or enamels with special properties
    • C03C2204/08—Glass having a rough surface
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/30—Aspects of methods for coating glass not covered above
    • C03C2218/34—Masking
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
    • C03C23/0005—Other surface treatment of glass not in the form of fibres or filaments by irradiation
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24273—Structurally defined web or sheet [e.g., overall dimension, etc.] including aperture
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24273—Structurally defined web or sheet [e.g., overall dimension, etc.] including aperture
    • Y10T428/24322—Composite web or sheet
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31—Surface property or characteristic of web, sheet or block

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Optics & Photonics (AREA)
  • Ceramic Engineering (AREA)
  • Geometry (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Surface Treatment Of Glass (AREA)
  • Weting (AREA)

Abstract

在具有從第一表面延伸之至少一損傷區的基板中形成通孔的方法，蝕刻基板的至少一損傷區以在基板中形成通孔，其中當通孔延伸透過基板的厚度T的同時，基板的第一表面被遮罩。此遮罩在蝕刻後從基板的第一表面移除，及當遮罩移除後，基板的第一表面具有表面粗糙度(Rq)為約小於1.0 nm。

Description

在基板中形成通孔的物件及方法
本申請案依據專利法主張2016年6月1日提出申請之美國臨時申請案第62/343,943號之優先權權益，本申請案依據上述美國臨時申請案的內容，且其內容以引用之方式全部併入本文。
本發明大體上關於在基板中形成通孔的物件及方法。更明確地，本發明係關於在基板中形成貫穿通孔的物件及方法，包括維持基板的表面粗糙度(Rq)的蝕刻處理。
中介物可用於做為電子裝置中的電介面，包括具有射頻(RF)濾波器的裝置，以伸展電連接至更寬的節距或以將電連接改道至不同的電連接。玻璃中介物已經成為矽及纖維強化聚合物的有利替代物。此乃部分地由於玻璃能夠形成大型薄片。然而，由於持續薄化電子裝置，許多應用需要中介物於具有厚度為300 μm或更小。此薄玻璃在製造步驟中會是難以處理的，因為玻璃的脆性與缺乏剛性。為了對抗玻璃基板的脆性與缺乏剛性，已經發展出使用被玻璃基板接合的載具的製造方法。
凡得瓦力可用於暫時地將玻璃物件接合至載具。此暫時接合的能量足以存留於平板製造，同時保持為可拆開的。然而，當玻璃物件的表面粗糙度(Rq)太高時，凡得瓦力會產生弱鍵結(若有的話)。
通常，玻璃中介物需要通孔(孔洞)被導電材料所填充以提供電介接。在玻璃中介物中創造通孔的習知方法是藉由創造損傷區透過玻璃中介物的厚度，隨後將基板浸入蝕刻劑中。蝕刻劑可接著從損傷區移除材料以擴大孔洞。然而，此蝕刻處理不是選擇性的，且材料會從玻璃中介物的兩面被移除及擴大孔洞。此總是創造出範圍外的玻璃中介物表面粗糙度(Rq)，於此範圍可適當地形成凡得瓦鍵結。
因此，存在需求於在基板中形成通孔的方法，同時維持低表面粗糙度(Rq)，使得基板可被可移除地接合至載具。
在第一態樣中，在具有從第一表面延伸的至少一損傷區的基板中形成通孔的方法包括：蝕刻基板的至少一損傷區以形成基板中的通孔，同時基板的第一表面被遮罩。此遮罩接著從基板的第一表面移除，且遮罩移除後，基板的第一表面具有表面粗糙度(Rq)為約小於1.0 nm。
根據第一態樣的第二態樣，其中此遮罩選自由二苯基矽(diphenylsilicon)、苯基矽(phenylsilicon)、甲基苯基矽(methylphenylsilicon)、及類鑽碳(DLC)所構成的群組。
根據第二態樣的第三態樣，其中此遮罩是DLC，且此DLC是氫化非晶碳。
根據前述任一態樣的第四態樣，其中於遮罩移除後，基板的第一表面具有表面粗糙度(Rq)為約小於0.6 nm。
根據前述任一態樣的第五態樣，其中相對於基板的第一表面之基板的第二表面在蝕刻期間被遮罩。
根據前述任一態樣的第六態樣，其中此遮罩藉由氧化而移除。
根據前述任一態樣的第七態樣，其中通孔是封閉通孔或貫穿通孔。
根據前述任一態樣的第八態樣，其中此遮罩被選擇性施加於基板的第一表面，使得損傷區是未遮罩的。
根據前述任一態樣的第九態樣，其中基板是玻璃、陶瓷、或玻璃-陶瓷。
根據前述任一態樣的第十態樣，進一步包括：藉由將基板的第一表面佈置在載具的接合表面上，將基板可移除地接合至載具。
根據第十態樣的第十一態樣，進一步包括：在將基板可移除地接合至載具後，藉由施加鹼性清洗溶液至基板、溼蝕刻基板、拋光基板、金屬電鍍基板、藉由溼蝕刻金屬圖案化基板、沉積材料於基板上、及退火基板之中至少一者處理基板。
根據第十一態樣的第十二態樣，進一步包括：從基板移除載具。
根據第十至第十二態樣中任一態樣的第十三態樣，其中遮罩被選擇性施加於基板的第一表面，使得損傷區是未遮罩的。
在第十四態樣中，一種物件包括基板，基板包括被厚度T所分隔開的第一表面與第二表面。至少一損傷區在基板中且從第一表面延伸。第一膜層佈置在基板的第一表面的未損傷區上。第一膜層係選自由二苯基矽、苯基矽、甲基苯基矽、及類鑽碳(DLC)所構成的群組。
根據第十四態樣的第十五態樣，進一步包括：第二膜層佈置在基板的第二表面的未損傷區上，第二膜層係選自由二苯基矽、苯基矽、甲基苯基矽、及類鑽碳(DLC)所構成的群組。
根據第十四態樣或第十五態樣的第十六態樣，其中第一膜是DLC，且此DLC是氫化非晶碳。
根據第十四至第十六態樣中任一態樣的第十七態樣，其中基板是玻璃、陶瓷、或玻璃-陶瓷。
額外的特徵與優勢將在之後的詳細說明書中說明，且部分地從說明書或藉由實行本文所述的具體例而認知的，包括之後的詳細說明書、申請專利範圍、及隨附圖式，對於所屬技術領域的熟習技藝者是顯而易見的。
應理解到前述的概略說明與後述的詳細說明敘述各種具體例，且意於提供理解所申請標的之本質與特徵的概觀或架構。隨附圖式被包括以提供進一步理解各種具體例，且被併入與構成本說明書的一部分。圖式繪示本文所述的各種具體例，且與說明書一同做為解釋所申請標的之原理與操作。
大體上參照圖表，本文提供的在基板中創造通孔的物件及方法的具體例容許維持基板的表面粗糙度(Rq)，使得基板可被可移除地接合至載具用於進一步處理。將詳細地參照在基板中形成通孔的物件及方法的各種具體例，這些例子繪示在隨附圖式中。儘可能地，相同的元件符號在整個圖式中用於指示相同或類似部件。注意到繪示在圖表中的具體例並非按比例，且相對尺寸與寬度僅被選作說明目的。
維持基板的蝕刻前表面粗糙度的具體例是藉由在用於通孔形成的蝕刻處理期間使用遮罩層。藉由在通孔形成期間維持基板的低表面粗糙度，基板可被可移除地接合至載具用於進一步處理。在處理後，基板可從載具移除，使得載具可被重覆使用於處理另外的基板。形成通孔的物件及方法的各種具體例在接下來詳細地說明。
圖1描繪範例物件100。本文所揭示的物件可例如做為半導體封裝中的中介物，此物件具有蝕刻孔洞(例如通孔)與表面特性，其容許成功的下游處理，包括但不限於，通孔金屬化與半導體裝置、射頻(RF)裝置(例如天線、開關、及類似物)、中介物裝置、微電子裝置、光電裝置、微機電系統(MEMS)裝置的線路重佈(redistribution layer(RDL))應用及其他通孔可發揮重要功效的應用。
圖2描繪大致上繪示出在基板中形成通孔的範例處理的範例流程圖10。描述在流程圖中的步驟在所有各種圖表的說明中將更被詳細地敘述。注意到儘管流程圖10被描繪成具有特定順序，應理解到本發明的具體例並不限於圖1中所示的步驟順序。
參照圖1，物件100通常包括基板110。基板110具有第一與第二表面112、114。至少一損傷區120被顯示在第一表面112上。第一與第二遮罩150a、150b形成在基板110的第一與第二表面112、114的至少一者上。在某些具體例中，遮罩可僅形成在第一或第二表面112、114的其中一者上。在其他具體例中，並如圖1所示，第一與第二遮罩150a、150b形成在基板110的第一與第二表面112、114兩者上。基板110可由各種玻璃組成物所形成，包括而沒有限制，硼矽酸玻璃、鋁矽酸玻璃、鹼金屬鋁矽酸玻璃、鋁硼矽酸玻璃、鹼金屬鋁硼矽酸玻璃、及鹼石灰玻璃。再者，基板110可為強化的(例如藉由離子交換處理)或非強化的。範例基板可包括但不限於，康寧EAGLE XG® 玻璃、化學強化的或非強化的康寧Gorilla® 玻璃，及康寧Willow® 玻璃。在更進一步具體例中，基板110可由諸如陶瓷及玻璃陶瓷的其他材料所製成。
現在參照圖3，基板110的第一與第二表面112、114可被厚度T分隔開，厚度T可取決於應用且不被本文所限制。作為非限制性例子，厚度T可在範圍為從約25 μm至約3000 μm、約25 μm至約2000 μm、約25 μm至約1000 μm、約50 μm至約3000 μm、約50 μm至約2000 μm、約50 μm至約1000 μm、約100 μm至約3000 μm、約100 μm至約2000 μm、約100 μm至約1000 μm、約200 μm至約3000 μm、約200 μm至約2000 μm、約200 μm至約1000 μm、約500 μm至約3000 μm、約500 μm至約2000 μm、約500 μm至約1000 μm、約3000 μm或更小、約2000 μm或更小、約1000 μm或更小、約700 μm或更小、約500 μm或更小、約400 μm或更小、約300 μm或更小、約200 μm或更小、或約100 μm或更小。第一與第二表面112、114亦具有蝕刻前表面粗糙度(Rq)。表面粗糙度(Rq)涉及表面量測的微觀高峰與谷底的均方根(RMS)。表面粗糙度(Rq)可使用原子力顯微鏡(AFM)量測，例如Veeco Dimension Icon。表面粗糙度(Rq)可改變以反應處理步驟，諸如下方所述的蝕刻處理。其在下方提供的例子中會更加明瞭。
參照圖2的方塊11，至少一損傷區120被創造在基板110中。如圖3所指示，至少一損傷區120延伸透過基板110的厚度T。至少一損傷區120可為延伸透過基板110的厚度T的孔洞。在某些具體例中，至少一損傷區120不延伸透過基板的整個厚度。在某些具體例中，有著多個損傷區的結合，其延伸透過基板的厚度T，而多個損傷區不延伸透過基板的整個厚度。至少一損傷區120可以各種方法形成在基板110中。在某些具體例中，至少一損傷區120可被創造，藉由施加高能量雷射脈衝以削磨貫穿基板110的狹窄孔洞。至少一損傷區120於下游蝕刻處理期間容許蝕刻劑在其中流動。
在另一例子中，至少一損傷區120可不為透過基板110的厚度T的孔洞，而是藉由脈衝雷射形成的雷射誘導損傷的線。脈衝雷射可形成損傷線，例如藉由非線性多光子吸收。在蝕刻處理期間，定義至少一損傷區120的雷射誘導損傷的線內的材料移除速率是快過在至少一損傷區120外的材料移除速率。執行雷射損傷創造與後續蝕刻的範例方法揭露在美國專利公告第9,278,886號與美國專利公開第2015/0166395號中，其各自內容以參考方式全部併入本文。
在圖2的流程圖10的方塊12，第一與第二遮罩150a、150b可被分別施加於基板110的第一與第二表面112、114。在某些具體例中，第一與第二遮罩150a、150b被任意地施加於基板110。在這些具體例中，第一與第二遮罩150a、150b在至少一損傷區120被創造在基板110中之前被施加至基板，如上所述。在此類情況中，雷射脈衝可削磨貫穿第一與第二遮罩150a、150b及基板110的孔洞。在其他具體例中，第一與第二遮罩150a、150b在至少一損傷區已經被創造之後被任意地施加至基板。在此例子中，第一與第二遮罩150a、150b在進一步處理之前，可從已經被創造的至少一損傷區120選擇性移除。在更進一步具體例中，第一與第二遮罩150a、150b被選擇性施加至基板110。在這些具體例中，第一與第二遮罩150a、150b可被施加至基板110，以避開已經被創造的至少一損傷區120。如此，第一與第二遮罩150a、150b可具有開口，其與至少一損傷區120對齊，以容許蝕刻劑進入至少一損傷區120。第一與第二遮罩150a、150b可被施加在厚度為小於或等於1 μm。在某些具體例中，遮罩150a、150b可被施加在厚度為小於或等於300 nm。在又進一步具體例中，遮罩150a、150b可被施加在厚度為約60 nm。
第一與第二遮罩150a、150b可為各種材料。例如，且沒有限制，遮罩可由二苯基矽、苯基矽、甲基苯基矽、及類鑽碳(DLC)所製成。在某些具體例中，類鑽碳可為氫化非晶碳。此氫化非晶碳膜可藉由沉積烴類前驅物化合物而形成，諸如化合物為化學式Cn Hy ，其中n是1至6而y是2至14。在某些例子中，n是1至4而y是2至10。此烴類化合物可為直線的或分支的。在某些例子中，此塗佈層藉由沉積烴類前驅物化合物而形成，此塗佈層具有合併的碳與氫含量為至少80重量百分比、至少85重量百分比、至少90重量百分比、或至少95重量百分比。在某些例子中，前驅物化合物被沉積以形成塗佈層，其具有合併的碳與氫含量為至少80重量百分比、至少85重量百分比、至少90重量百分比、至少95重量百分比、至少98重量百分比、至少99重量百分比、或大於99.5重量百分比。
烴類前驅物化合物的例子包括烷烴。烷烴可包括甲烷、乙烷、丙烷、丁烷、戊烷及己烷。在某些例子中，烴類前驅物化合物包括至少一碳-碳雙鍵，例如烯烴。烯烴可包括乙烯、丙烯、丁烯、戊烯及己烯。烯烴中的碳-碳雙鍵可呈現在化合物中的各種位置，例如1-丁烯或2-丁烯。在又其他例子中，烴類前驅物化合物包括至少一碳-碳三鍵，例如炔烴。炔烴可包括乙炔、丙炔、丁炔、戊炔及己炔。在某些例子中，炔烴中的碳-碳三鍵可呈現在化合物中的各種位置，例如1-丁炔或2-丁炔。
意於使第一與第二遮罩150a、150b可全為相同的材料。在其他具體例中，第一與第二遮罩150a、150b可為不同材料。在具體例中，其中遮罩材料是二苯基矽，二苯基矽膜可被施加於基板110的第一與第二表面112、114的至少一者。其中二苯基矽膜被施加於第一與第二表面112、114兩者，有著第一二苯基矽膜層與第二二苯基矽膜層。再者，雖未圖示，二苯基矽膜可被施加於基板110的邊緣表面。此膜可例如藉由氣相沉積而施加。作為例子而非限制，二苯基矽膜由二苯基矽烷與氫所形成，藉由化學氣相沉積，更佳為電漿增強化學氣相沉積。二苯基矽是高效的遮罩材料且抵抗酸性侵蝕。因此，二苯基矽可承受與通常使用在蝕刻處理中的氫氟無機酸混合物接觸。再者，二苯基矽可容易地從玻璃表面移除，而不創造過度的表面粗糙度(Rq)。
在具體例中，遮罩材料是氫化非晶碳，氫化非晶碳膜可施加於基板110的第一與第二表面112、114的至少一者。其中氫化非晶碳膜被施加於第一與第二表面112、114兩者，有著第一氫化非晶碳膜層與第二氫化非晶碳膜層。可藉由化學氣相沉積(CVD)技術及類似方法沉積氫化非晶碳。CVD技術的特定例子包括CVD、低壓CVD、大氣壓力CVD、電漿增強CVD(PECVD)、大氣電漿CVD、原子層沉積(ALD)、電漿ALD、及化學束磊晶。在另一例子中，塗佈層可被沉積，藉由熱分解吹管(pyrolytic torch)於溫度高於600℃、高於800℃、或高於1000℃，包括在其間的任何範圍及次範圍。含有烴類化合物之用於形成塗佈層的氣體混合物亦可包含受控數量的另一化合物，例如載體氣體或工作氣體。其他化合物可包括空氣、氧、氧化亞氮、二氧化碳、水蒸氣、或過氧化氫、及/或一或更多惰性氣體，例如氦、氖、氬、氪、氙。
在使用遮罩的任何選擇性蝕刻處理的最大挑戰之一為遮罩移除。遮罩材料必須足夠堅韌以抵抗蝕刻，但亦必須為易於移除而不損傷基板。諸如光阻之聚合物遮罩經常涉及將被遮罩的基板浸泡在熱溶劑中並機械攪拌。通常，藉由電漿蝕刻移除無機遮罩。例如，PECVD沉積的碳化矽(SiC)通常以含氟電漿移除。然而，在此類處理下，基板在移除期間亦被蝕刻，因而增加基板的表面粗糙度(Rq)。二苯基矽對於傳統遮罩材料是獨特的，其特別容易氧化。在氧化期間，有機基團被熱解並移除，而矽被氧化以形成二氧化矽。此處理容許基板的表面粗糙度被實質地保持。如下方例子3中所示，氫化非晶碳亦被氧化以移除遮罩。預期其他電漿聚合物膜及材料可具有實質上類似於二苯基矽的益處。例如，且非限制，苯基矽、甲基苯基矽、及類鑽碳(DLC)。
參照圖2之流程圖10的方塊13，在已經創造至少一損傷區120及已經施加第一與第二遮罩150a、150b之後，玻璃物件100可被蝕刻。如圖4所示，蝕刻處理可包括將玻璃物件100浸入蝕刻劑180池中。額外地或可替換地，蝕刻劑180可被噴塗在玻璃物件100上。蝕刻劑180可移除在基板110的未遮罩部分的基板110的材料，以擴大至少一損傷區120的直徑。可使用任何合適蝕刻劑。蝕刻劑的非限制性例子包括強無機酸，諸如硝酸、氫氯酸、或帶有含氟蝕刻劑(諸如氫氯酸、二氟化銨、氟化鈉、及類似物)的磷酸。
圖5繪示在已經發生蝕刻後的基板110。如所描繪的，通孔124從圖1所繪示的至少一損傷區120被打開。通孔124被顯示為貫穿通孔，其延伸透過基板的厚度。在其他具體例中，通孔可為封閉通孔，僅延伸透過基板的一部分。在某些具體例中，貫穿通孔從損傷區形成，其延伸透過基板的厚度，而封閉通孔從損傷區形成，其不延伸貫穿基板的厚度。作為例子而非限制，通孔124可具有直徑在範圍於約5 μm至約150 μm、約20 μm至約150 μm、或約5 μm至約20 μm。此通孔可實質為圓柱形，例如具有腰部(沿著通孔具有最小直徑的點)帶有直徑為在第一或第二表面上的通孔的開口的直徑的至少70%、至少75%、或至少80%。
在至少一通孔124已經被打開至所欲直徑後，第一與第二遮罩150a、150b可從基板110移除(圖2的方塊14)。圖6繪示第一與第二遮罩150a、150b已經從基板110移除。在某些具體例中，基板100可被清洗，在移除第一與第二遮罩150a、150b(例如藉由去離子水沖洗)之前及/或之後。例如而非限制，在具體例中，其中二苯基矽是遮罩材料，第一與第二遮罩150a、150b可藉由氧化移除。用於氧化二苯基矽膜的範例工具包括氧光阻去除器或電漿灰化器。遮罩150a、150b可被移除，而不實質地增加基板110的第一與第二表面112、114的表面粗糙度(Rq)(即蝕刻後表面粗糙度(Rq))。實質地增加表面粗糙度(Rq)涉及增加基板110的表面粗糙度(Rq)超過本文所述的凡得瓦鍵結能力。在某些例子中，在移除遮罩150a、150b後的基板110的完成的表面粗糙度(Rq)是小於約1.2 nm、小於約1.1 nm、小於約1.0 nm、小於約0.9 nm、小於約0.8 nm、小於約0.7 nm、小於約0.6 nm、小於約0.5 nm、小於約0.4 nm、或小於約0.3 nm。
在通孔124已經被蝕刻後，基板110可接受額外處理步驟，以獲得額外的中介物性質。圖7繪示範例基板110被可移除地接合至範例載具200，藉由將基板110的第二表面114佈置在載具200的接合表面210上。如上所論述的，玻璃中介物可為非常薄(例如任何地方為從小於300 μm至700 μm)。此薄材料在製造步驟期間會是難以處理的，因為基板110的脆性及缺乏剛性。為了對抗脆性與缺乏剛性，在通孔已經形成及第一與第二遮罩150a、150b已經被移除之後，基板110可被可移除地接合至載具200。將基板100可移除地接合至載具的一種範例方法是藉由使用凡得瓦鍵結，諸如美國專利公開第2014/0170378號所揭示的，其全文被參考並併入本文中。凡得瓦鍵結通常包括將物件的表面佈置在載具的接合表面上，並提高物件的溫度，接著冷卻物件至室溫。成果為物件與載具被可移除地接合在一起。凡得瓦鍵結是有利於下游處理的，因為其能形成能夠承受處理(例如高溫處理)的接合，同時容許基板的整個區域從載具200被移除(一次被全部移除或分段地被移除)。在基板110已經被移除之後，載具200可重覆使用以處理額外基板。
然而，使用凡得瓦表面接合技術以接合基板的挑戰是被接合在一起的表面的粗糙度影響將被接合的表面的能力。作為非限制性例子，表面粗糙度(Rq)大於約1.0 nm可實質地避免自發接合或造成基板110至載具200的弱鍵結。弱鍵結會允許液體從一或更多處理滲透在基板110與載具200之間，因而導致從一處理的分層或如殘留物的處理汙染，其會影響後續處理。
載具200可為任何合適材料，諸如例如玻璃。載具200不需要為玻璃，但可替代為例如陶瓷、玻璃-陶瓷、或金屬。若是以玻璃製成，載具200可為任何合適的組成物，包括但不限於，鋁矽酸玻璃、硼矽酸玻璃、鋁硼矽酸玻璃、鹼石灰矽酸鹽，且可為含鹼金屬或不含鹼金屬，取決於其最終的應用。載具200可具有任何合適厚度。此外，載具200可被製造為一層，如圖示，或為接合在一起(例如藉由積層)的多層(包括多個薄片)。再者，載具200的熱膨脹係數可實質上匹配於基板110的熱膨脹係數，以避免在高溫處理期間，基板110的扭曲或從載具200的基板110的去耦合。基板110的表面粗糙度(Rq)是附加於載具200的表面粗糙度。因此，通常建議載具200具有表面粗糙度(Rq)小於或等於0.6 nm。
參照圖2的方塊16，一旦基板110被充分地接合至載具200，使得載具200與基板110在處理期間不會分開，基板110可接受進一步的處理。處理基板110可包括以下步驟，諸如施加鹼性清洗溶液至基板110、溼蝕刻基板110、拋光基板110、金屬電鍍基板110、藉由溼蝕刻金屬圖案化基板110、藉由沉積而沉積材料至基板110上、及退火基板110。例子
下方的比較例及例子1與2比較由於酸性蝕刻與二苯基矽膜的移除之表面粗糙度(Rq)的改變。在各例子中，玻璃樣品是0.7 mm厚且不具有損傷區。各樣品的表面粗糙度(Rq)藉由Veeco Dimension ICON AFM量測，帶有下列參數：1 Hz、512 掃描/線、及2微米影像尺寸。 比較例
在此比較例中，未遮罩的Eagle XG® 玻璃樣品的表面粗糙度(Rq)被週期地量測，同時此玻璃樣品被6M氫氟酸與1.6M硝酸混合物所蝕刻。已經證實大於1 nm的表面粗糙度(Rq)是在室溫下小於10分鐘並且機械(非超音波)攪拌而達成。此時間量對應於蝕刻深度為40 μm。此結果列表在下方的表1中。注意到在某些例子中超過1.0 nm的表面粗糙度(Rq)可導致弱或無效的凡得瓦鍵結。 表1 例子1
在此例子中，Eagle XG® 玻璃樣品的表面粗糙度(Rq)在二苯基矽膜施加之前、在二苯基矽膜施加之後、與在二苯基矽膜被移除之後被量測。此二苯基矽膜在應用材料公司的P5000通用化學氣相沉積(CVD)系統中被沉積，帶有下列參數：390℃、容積流率為500 sccm的二苯基矽烷、容積流率為600 sccm的氫氣(H2 )、9托、210密耳間隙、300瓦RF、二苯基矽烷起泡器於80℃。此二苯基矽膜具有厚度為60 nm。此二苯基矽膜藉由 Gasonics L3510光阻去除器而移除，具有下列參數：200℃、1200毫托、1000 sccm N2 、100 sccm O2 、900瓦、2.54 GHz、具有30秒過蝕刻的終點控制。列表在下方表2中的結果顯示表面粗糙度(Rq)只稍微地增加，同時仍然良好地處在如上所述凡得瓦鍵結所需的範圍中。注意到在此例子中玻璃基板沒有被酸性蝕刻。 表2 例子2
在此例子中，Eagle XG® 玻璃樣品的表面粗糙度(Rq)在二苯基矽膜施加之後、在蝕刻15分鐘之後、及在二苯基矽膜移除之後被量測。如同例子1，此二苯基矽膜在應用材料公司的P5000通用CVD系統中被沉積，帶有下列參數：390℃、容積流率為500 sccm的二苯基矽烷、容積流率為600 sccm的氫氣(H2 )、9托、210密耳間隙、300瓦RF、二苯基矽烷起泡器於80℃。此二苯基矽膜具有厚度為60 nm。蝕刻劑為3M氫氟酸與1M硝酸的混合物並結合機械(非超音波)攪拌。如同上述例子，此二苯基矽膜藉由 Gasonics L3510光阻去除器而移除，具有下列參數：200℃、1200毫托、1000 sccm N2 、100 sccm O2 、900瓦、2.54 GHz、具有30秒過蝕刻的終點控制。列表在下方表3中的結果顯示表面粗糙度(Rq)良好地處在如上所述凡得瓦鍵結所需的範圍中。此例子亦顯示如本文所論述的對於酸性侵蝕的二苯基矽的抵抗性。 表3 例子3
在此例子中，Eagle XG® 玻璃晶圓的6個樣品具有0.7 mm厚度、150 mm直徑與無損傷區，具有施加的非晶氫化碳膜遮罩。此遮罩由乙烯與氫氣所沉積，於Nextral NE500反應性離子蝕刻器中，在以下情況：30 sccm乙烯、70 sccm氫氣、於壓力為60毫托、於功率為800瓦及頻率為13.56 MHz。此遮罩(沉積完時)的沉積時間與厚度列表在下方表4中。此遮罩的折射率亦被量測(沉積完時)於632 nm。厚度與折射率是使用N&K分析儀而量測。在沉積遮罩後，樣品被蝕刻大約15分鐘於23℃，在10重量%氫氟酸與7重量%硝酸的蝕刻溶液中。在蝕刻後，使用N&K分析儀再次量測遮罩的厚度與在632 nm的折射率，其列表於下方的表4中。厚度與折射率的改變是在實驗誤差的範圍中。接下來，此遮罩藉由 Gasonics L3510光阻去除器而移除，具有下列參數：200℃、1200毫托、1000 sccm N2 、100 sccm O2 、900瓦、2.54 GHz、具有30秒過蝕刻的終點控制。以及各樣品的表面粗糙度(Rq)藉由Veeco Dimension ICON AFM量測，帶有下列參數：1 Hz、512 掃描/線、及2微米影像尺寸。此結果列表在下方表4中。
如可從表4得知，樣品7不具有遮罩且在如具有遮罩的6個樣品的相同條件下被蝕刻。未遮罩的樣品7的表面粗糙度(Rq)是明顯較高的1.13，相較於0.240至0.278。此顯示出此遮罩。 表4
本文提供的其他材料可沉積在基板上，使用應用材料公司P5000通用CVD系統，具有類似參數。例如，苯基矽膜可從帶有氫氣載體氣體的有機矽氫化物前驅物而沉積，在應用材料公司P5000通用CVD系統中，由苯基矽烷與氫氣，帶有下列條件：390℃、容積流率為120 sccm的苯基矽烷、及容積流率為600 sccm的氫氣(H2 )、9托壓力、210密耳間隙、與300瓦13.56 MHz RF。此苯基矽烷安瓿可在30℃。沉積速率可為接近1000 nm/min。甲基苯基矽膜可使用應用材料公司P5000通用CVD系統而沉積，帶有下列處理條件：390℃、容積流率為200 sccm的甲基苯基矽烷、容積流率為600 sccm的氫氣(H2 )、9托、210密耳間隙、與450瓦RF。此甲基苯基矽烷安瓿可在80℃。諸如有機矽鹵化物的其他前驅物可產生類似成果。
應理解到本文所述的具體例提供形成通孔於基板中，而不實質地增加基板的表面粗糙度(Rq)。藉由在通孔形成期間保持基板的低表面粗糙度，基板可被可移除地接合至載具用於進一步處理。在處理後，基板從載具移除，使得載具可重覆使用以處理其他基板。再者，貫穿通孔可被製成實質圓柱形，因為其可從兩端被蝕刻。
在不悖離申請專利標的之精神與範疇下，本文所述具體例的各種修改與變化，對於此技術領域的熟習技藝者是顯而易見的。因此，意於本說明書涵蓋本文所述的各種具體例的修改與變化，提供各種具體例的修改與變化是在隨附的申請專利範圍及其等效物的範疇之中。
10‧‧‧流程圖
11、12、13、14、15、16‧‧‧方塊
100‧‧‧物件
110‧‧‧基板
112‧‧‧第一表面
114‧‧‧第二表面
120‧‧‧損傷區
124‧‧‧通孔
150A‧‧‧第一遮罩
150B‧‧‧第二遮罩
180‧‧‧蝕刻劑
200‧‧‧載具
210‧‧‧接合表面
在圖式中說明的具體例在本質上是圖解與示例性的，且不意於限制由申請專利範圍所定義的申請標的。當與隨後的圖式共同閱讀時，可理解圖解具體例的隨後詳細說明，其中類似結構以相同的元件符號標示且其中：
圖1繪示根據本文所示與所述的一或更多具體例的包括基板與遮罩的物件的透視圖；
圖2繪示根據本文所示與所述的一或更多具體例的敘述製造物件的方法的流程圖；
圖3繪示根據本文所示與所述的一或更多具體例的具有一或多個損傷區形成於其中的圖1的物件的剖面視圖；
圖4繪示根據本文所示與所述的一或更多具體例的浸入蝕刻劑之圖1的物件；
圖5繪示根據本文所示與所述的一或更多具體例的具有一或更多通孔形成於其中之圖1的物件之剖面視圖；
圖6繪示根據本文所示與所述的一或更多具體例的遮罩被移除之圖4的物件之剖面視圖；以及
圖7繪示根據本文所示與所述的一或更多具體例的接合至載具之圖6的物件的透視圖。
國內寄存資訊 (請依寄存機構、日期、號碼順序註記) 無
國外寄存資訊 (請依寄存國家、機構、日期、號碼順序註記) 無
100‧‧‧物件
110‧‧‧基板
112‧‧‧第一表面
114‧‧‧第二表面
124‧‧‧通孔
150A‧‧‧第一遮罩
150B‧‧‧第二遮罩

Claims (10)

  1. 一種在具有從一第一表面延伸之至少一損傷區的一基板中形成一通孔的方法，該方法包含以下步驟： 蝕刻該基板的該至少一損傷區，以在該基板中形成一通孔，同時該基板的該第一表面被遮罩；以及從該基板的該第一表面移除該遮罩，其中於該遮罩移除後，該基板的該第一表面具有一表面粗糙度(Rq)為約小於1.0 nm。
  2. 如請求項1所述之方法，其中該遮罩係選自由二苯基矽(diphenylsilicon)、苯基矽(phenylsilicon)、甲基苯基矽(methylphenylsilicon)、及類鑽碳(DLC)所構成的一群組。
  3. 如請求項2所述之方法，其中該遮罩是DLC，且該DLC是氫化非晶碳。
  4. 如請求項1–3中任一項所述之方法，其中於該遮罩移除後，該基板的該第一表面具有一表面粗糙度(Rq)為約小於0.6 nm。
  5. 如請求項1–3中任一項所述之方法，其中該基板是一玻璃、陶瓷、或玻璃-陶瓷。
  6. 如請求項1–3中任一項所述之方法，進一步包含以下步驟： 藉由將該基板的該第一表面佈置在一載具的一接合表面上，將該基板可移除地接合至該載具。
  7. 一種物件，包含： 一基板，該基板包含一第一表面與一第二表面，該第一表面與該第二表面以一厚度T分隔開； 至少一損傷區，該至少一損傷區在該基板中且從該第一表面延伸；以及 一第一膜層，該第一膜層佈置在該基板的該第一表面的一未損傷區上，該第一膜層係選自由二苯基矽(diphenylsilicon)、苯基矽(phenylsilicon)、甲基苯基矽(methylphenylsilicon)、及類鑽碳(DLC)所構成的一群組。
  8. 如請求項7所述之物件，進一步包含一第二膜層，該第二膜層佈置在該基板的該第二表面的該未損傷區上，該第二膜層係選自由二苯基矽(diphenylsilicon)、苯基矽(phenylsilicon)、甲基苯基矽(methylphenylsilicon)、及類鑽碳(DLC)所構成的一群組。
  9. 如請求項7所述之物件，其中該第一膜是DLC，且該DLC是氫化非晶碳。
  10. 如請求項7–9中任一項所述之物件，其中該基板是一玻璃、陶瓷、或玻璃-陶瓷。
TW106118017A 2016-06-01 2017-06-01 在基板中形成通孔的物件及方法 TW201806082A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201662343943P 2016-06-01 2016-06-01
US62/343,943 2016-06-01

Publications (1)

Publication Number Publication Date
TW201806082A true TW201806082A (zh) 2018-02-16

Family

ID=59055309

Family Applications (1)

Application Number Title Priority Date Filing Date
TW106118017A TW201806082A (zh) 2016-06-01 2017-06-01 在基板中形成通孔的物件及方法

Country Status (7)

Country Link
US (2) US10410883B2 (zh)
EP (1) EP3465745A1 (zh)
JP (1) JP2019519457A (zh)
KR (1) KR20190013869A (zh)
CN (1) CN109314058A (zh)
TW (1) TW201806082A (zh)
WO (1) WO2017210376A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111757856A (zh) * 2018-02-22 2020-10-09 康宁股份有限公司 具有低的hf蚀刻后粗糙度的不含碱性硼硅酸盐玻璃

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10410883B2 (en) 2016-06-01 2019-09-10 Corning Incorporated Articles and methods of forming vias in substrates
US10794679B2 (en) 2016-06-29 2020-10-06 Corning Incorporated Method and system for measuring geometric parameters of through holes
US10580725B2 (en) 2017-05-25 2020-03-03 Corning Incorporated Articles having vias with geometry attributes and methods for fabricating the same
US11078112B2 (en) 2017-05-25 2021-08-03 Corning Incorporated Silica-containing substrates with vias having an axially variable sidewall taper and methods for forming the same
WO2019136051A1 (en) * 2018-01-04 2019-07-11 Corning Incorporated Methods of processing a substrate
US11152294B2 (en) 2018-04-09 2021-10-19 Corning Incorporated Hermetic metallized via with improved reliability
WO2020112710A1 (en) * 2018-11-27 2020-06-04 Corning Incorporated 3d interposer with through glass vias - method of increasing adhesion between copper and glass surfaces and articles therefrom
JP7492969B2 (ja) 2019-02-21 2024-05-30 コーニング インコーポレイテッド 銅金属化貫通孔を有するガラスまたはガラスセラミック物品およびその製造方法
US11148935B2 (en) 2019-02-22 2021-10-19 Menlo Microsystems, Inc. Full symmetric multi-throw switch using conformal pinched through via
DE102019217466A1 (de) * 2019-11-12 2021-05-12 Lpkf Laser & Electronics Ag Reaktionsgefäße aus Glas, Herstellungsverfahren und Verfahren zur Analyse
CN112763486B (zh) * 2020-11-30 2022-05-10 成都飞机工业（集团）有限责任公司 一种基于线激光扫描的复材壁板阵列孔检测方法

Family Cites Families (780)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US108387A (en) 1870-10-18 Improvement in machines for making rope
US208387A (en) 1878-09-24 Improvement in stocking-supporters
US1790397A (en) 1931-01-27 Glass workins machine
US237571A (en) 1881-02-08 messier
US2682134A (en) 1951-08-17 1954-06-29 Corning Glass Works Glass sheet containing translucent linear strips
US2749794A (en) 1953-04-24 1956-06-12 Corning Glass Works Illuminating glassware and method of making it
GB1242172A (en) 1968-02-23 1971-08-11 Ford Motor Co A process for chemically cutting glass
US3647410A (en) 1969-09-09 1972-03-07 Owens Illinois Inc Glass ribbon machine blow head mechanism
US3775084A (en) 1970-01-02 1973-11-27 Owens Illinois Inc Pressurizer apparatus for glass ribbon machine
US3729302A (en) 1970-01-02 1973-04-24 Owens Illinois Inc Removal of glass article from ribbon forming machine by vibrating force
US3695498A (en) 1970-08-26 1972-10-03 Ppg Industries Inc Non-contact thermal cutting
US3695497A (en) 1970-08-26 1972-10-03 Ppg Industries Inc Method of severing glass
US3713921A (en) 1971-04-01 1973-01-30 Gen Electric Geometry control of etched nuclear particle tracks
JPS5417765B1 (zh) 1971-04-26 1979-07-03
DE2231330A1 (de) 1972-06-27 1974-01-10 Agfa Gevaert Ag Verfahren und vorrichtung zur erzeugung eines scharfen fokus
DE2757890C2 (de) 1977-12-24 1981-10-15 Fa. Karl Lutz, 6980 Wertheim Verfahren und Vorrichtung zum Herstellen von Behältnissen aus Röhrenglas, insbesondere Ampullen
JPS55130839A (en) 1979-03-29 1980-10-11 Asahi Glass Co Ltd Uniform etching method of article
US4395271A (en) 1979-04-13 1983-07-26 Corning Glass Works Method for making porous magnetic glass and crystal-containing structures
JPS56129261A (en) * 1980-03-17 1981-10-09 Hitachi Ltd Thin film-forming coating liquid composition
JPS56160893A (en) 1980-05-16 1981-12-10 Matsushita Electric Ind Co Ltd Absorbing film for laser work
US4441008A (en) 1981-09-14 1984-04-03 Ford Motor Company Method of drilling ultrafine channels through glass
US4507384A (en) * 1983-04-18 1985-03-26 Nippon Telegraph & Telephone Public Corporation Pattern forming material and method for forming pattern therewith
US4546231A (en) 1983-11-14 1985-10-08 Group Ii Manufacturing Ltd. Creation of a parting zone in a crystal structure
US4547836A (en) 1984-02-01 1985-10-15 General Electric Company Insulating glass body with electrical feedthroughs and method of preparation
JPS60220340A (ja) * 1984-04-17 1985-11-05 Nippon Telegr & Teleph Corp <Ntt> 感光性樹脂組成物及びパタ−ン形成方法
US4646308A (en) 1985-09-30 1987-02-24 Spectra-Physics, Inc. Synchronously pumped dye laser using ultrashort pump pulses
AT384802B (de) 1986-05-28 1988-01-11 Avl Verbrennungskraft Messtech Verfahren zur herstellung von traegermaterialien fuer optische sensoren
US4749400A (en) 1986-12-12 1988-06-07 Ppg Industries, Inc. Discrete glass sheet cutting
JP2691543B2 (ja) 1986-12-18 1997-12-17 住友化学工業株式会社 光制御板およびその製造方法
DE3789858T2 (de) 1986-12-18 1994-09-01 Nippon Sheet Glass Co Ltd Platten für Lichtkontrolle.
JPS63203775A (ja) 1987-02-19 1988-08-23 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン 基板のメツキ処理方法
WO1989002877A1 (en) 1987-10-01 1989-04-06 Asahi Glass Company Ltd. Alkali free glass
US4918751A (en) 1987-10-05 1990-04-17 The University Of Rochester Method for optical pulse transmission through optical fibers which increases the pulse power handling capacity of the fibers
IL84255A (en) 1987-10-23 1993-02-21 Galram Technology Ind Ltd Process for removal of post- baked photoresist layer
JPH01179770A (ja) 1988-01-12 1989-07-17 Hiroshima Denki Gakuen 金属とセラミックスとの接合方法
US4764930A (en) 1988-01-27 1988-08-16 Intelligent Surgical Lasers Multiwavelength laser source
US4907586A (en) 1988-03-31 1990-03-13 Intelligent Surgical Lasers Method for reshaping the eye
JPH0258221A (ja) * 1988-08-23 1990-02-27 Semiconductor Energy Lab Co Ltd 炭素または炭素を主成分とするマスクを用いたエッチング方法
US5089062A (en) 1988-10-14 1992-02-18 Abb Power T&D Company, Inc. Drilling of steel sheet
US4929065A (en) 1988-11-03 1990-05-29 Isotec Partners, Ltd. Glass plate fusion for macro-gradient refractive index materials
US4891054A (en) 1988-12-30 1990-01-02 Ppg Industries, Inc. Method for cutting hot glass
US5166493A (en) 1989-01-10 1992-11-24 Canon Kabushiki Kaisha Apparatus and method of boring using laser
US4948941A (en) 1989-02-27 1990-08-14 Motorola, Inc. Method of laser drilling a substrate
US5112722A (en) 1989-04-12 1992-05-12 Nippon Sheet Glass Co., Ltd. Method of producing light control plate which induces scattering of light at different angles
US5208068A (en) 1989-04-17 1993-05-04 International Business Machines Corporation Lamination method for coating the sidewall or filling a cavity in a substrate
DE69023382T2 (de) 1989-04-17 1996-06-20 Ibm Laminierungsverfahren zum Überdecken der Seitenwände einer Höhlung in einem Substrat sowie zur Füllung dieser Höhlung.
US5104210A (en) 1989-04-24 1992-04-14 Monsanto Company Light control films and method of making
US5035918A (en) 1989-04-26 1991-07-30 Amp Incorporated Non-flammable and strippable plating resist and method of using same
JPH0676269B2 (ja) 1990-02-28 1994-09-28 太陽誘電株式会社 セラミック基板のレーザースクライブ方法
US5040182A (en) 1990-04-24 1991-08-13 Coherent, Inc. Mode-locked laser
JPH04349132A (ja) 1990-12-28 1992-12-03 Seikosha Co Ltd 感光性ガラスの加工方法
JPH07503382A (ja) 1991-11-06 1995-04-13 ライ，シュイ，ティー． 角膜手術装置及び方法
US5314522A (en) 1991-11-19 1994-05-24 Seikosha Co., Ltd. Method of processing photosensitive glass with a pulsed laser to form grooves
US5374291A (en) 1991-12-10 1994-12-20 Director-General Of Agency Of Industrial Science And Technology Method of processing photosensitive glass
GB9218482D0 (en) 1992-09-01 1992-10-14 Dixon Arthur E Apparatus and method for scanning laser imaging of macroscopic samples
US5265107A (en) 1992-02-05 1993-11-23 Bell Communications Research, Inc. Broadband absorber having multiple quantum wells of different thicknesses
JPH05323110A (ja) 1992-05-22 1993-12-07 Hitachi Koki Co Ltd 多ビーム発生素子
JPH0679486A (ja) 1992-08-25 1994-03-22 Rohm Co Ltd インクジェットヘッドの加工方法
US6016223A (en) 1992-08-31 2000-01-18 Canon Kabushiki Kaisha Double bessel beam producing method and apparatus
WO1994014567A1 (en) 1992-12-18 1994-07-07 Firebird Traders Ltd. Process and apparatus for etching an image within a solid article
DE4305764A1 (de) 1993-02-25 1994-09-01 Krupp Foerdertechnik Gmbh Verlegbare Brücke und Einrichtung zum Verlegen der Brücke
JPH06318756A (ja) 1993-05-06 1994-11-15 Toshiba Corp レ−ザ装置
WO1994029069A1 (fr) 1993-06-04 1994-12-22 Seiko Epson Corporation Appareil et procede d'usinage au laser, et panneau a cristaux liquides
CN1096936A (zh) 1993-07-01 1995-01-04 山东矿业学院济南分院 一种劳保饮料及其制造方法
JPH07136162A (ja) 1993-11-17 1995-05-30 Fujitsu Ltd 超音波カプラ
US6489589B1 (en) 1994-02-07 2002-12-03 Board Of Regents, University Of Nebraska-Lincoln Femtosecond laser utilization methods and apparatus and method for producing nanoparticles
US5436925A (en) 1994-03-01 1995-07-25 Hewlett-Packard Company Colliding pulse mode-locked fiber ring laser using a semiconductor saturable absorber
US5400350A (en) 1994-03-31 1995-03-21 Imra America, Inc. Method and apparatus for generating high energy ultrashort pulses
US5778016A (en) 1994-04-01 1998-07-07 Imra America, Inc. Scanning temporal ultrafast delay methods and apparatuses therefor
JP2526806B2 (ja) 1994-04-26 1996-08-21 日本電気株式会社 半導体レ―ザおよびその動作方法
WO1995031023A1 (en) 1994-05-09 1995-11-16 Massachusetts Institute Of Technology Dispersion-compensated laser using prismatic end elements
US5493096A (en) 1994-05-10 1996-02-20 Grumman Aerospace Corporation Thin substrate micro-via interconnect
JP3385442B2 (ja) 1994-05-31 2003-03-10 株式会社ニュークリエイション 検査用光学系および検査装置
US5434875A (en) 1994-08-24 1995-07-18 Tamar Technology Co. Low cost, high average power, high brightness solid state laser
US6016324A (en) 1994-08-24 2000-01-18 Jmar Research, Inc. Short pulse laser system
US5776220A (en) 1994-09-19 1998-07-07 Corning Incorporated Method and apparatus for breaking brittle materials
US5696782A (en) 1995-05-19 1997-12-09 Imra America, Inc. High power fiber chirped pulse amplification systems based on cladding pumped rare-earth doped fibers
US6120131A (en) 1995-08-28 2000-09-19 Lexmark International, Inc. Method of forming an inkjet printhead nozzle structure
JPH09106243A (ja) 1995-10-12 1997-04-22 Dainippon Printing Co Ltd ホログラムの複製方法
US5919607A (en) 1995-10-26 1999-07-06 Brown University Research Foundation Photo-encoded selective etching for glass based microtechnology applications
US5844200A (en) 1996-05-16 1998-12-01 Sendex Medical, Inc. Method for drilling subminiature through holes in a sensor substrate with a laser
JP2873937B2 (ja) 1996-05-24 1999-03-24 工業技術院長 ガラスの光微細加工方法
US5736709A (en) 1996-08-12 1998-04-07 Armco Inc. Descaling metal with a laser having a very short pulse width and high average power
US5746884A (en) 1996-08-13 1998-05-05 Advanced Micro Devices, Inc. Fluted via formation for superior metal step coverage
US7353829B1 (en) 1996-10-30 2008-04-08 Provectus Devicetech, Inc. Methods and apparatus for multi-photon photo-activation of therapeutic agents
US5965043A (en) 1996-11-08 1999-10-12 W. L. Gore & Associates, Inc. Method for using ultrasonic treatment in combination with UV-lasers to enable plating of high aspect ratio micro-vias
EP0951454B8 (en) 1996-11-13 2002-11-20 Corning Incorporated Method for forming an internally channeled glass article
US6140243A (en) * 1996-12-12 2000-10-31 Texas Instruments Incorporated Low temperature process for post-etch defluoridation of metals
JP3118203B2 (ja) 1997-03-27 2000-12-18 住友重機械工業株式会社 レーザ加工方法
JP3644187B2 (ja) 1997-04-17 2005-04-27 三菱電機株式会社 遮断器の蓄勢装置
JP3227106B2 (ja) 1997-04-23 2001-11-12 株式会社ミツトヨ 内径測定方法および内径測定装置
US5933230A (en) 1997-04-28 1999-08-03 International Business Machines Corporation Surface inspection tool
JP3957010B2 (ja) 1997-06-04 2007-08-08 日本板硝子株式会社 微細孔を有するガラス基材
US6156030A (en) 1997-06-04 2000-12-05 Y-Beam Technologies, Inc. Method and apparatus for high precision variable rate material removal and modification
BE1011208A4 (fr) 1997-06-11 1999-06-01 Cuvelier Georges Procede de decalottage de pieces en verre.
DE19728766C1 (de) 1997-07-07 1998-12-17 Schott Rohrglas Gmbh Verwendung eines Verfahrens zur Herstellung einer Sollbruchstelle bei einem Glaskörper
US6078599A (en) 1997-07-22 2000-06-20 Cymer, Inc. Wavelength shift correction technique for a laser
JP3264224B2 (ja) 1997-08-04 2002-03-11 キヤノン株式会社 照明装置及びそれを用いた投影露光装置
WO1999029243A1 (en) 1997-12-05 1999-06-17 Thermolase Corporation Skin enhancement using laser light
US6501578B1 (en) 1997-12-19 2002-12-31 Electric Power Research Institute, Inc. Apparatus and method for line of sight laser communications
JPH11197498A (ja) 1998-01-13 1999-07-27 Japan Science & Technology Corp 無機材料内部の選択的改質方法及び内部が選択的に改質された無機材料
US6272156B1 (en) 1998-01-28 2001-08-07 Coherent, Inc. Apparatus for ultrashort pulse transportation and delivery
JPH11240730A (ja) 1998-02-27 1999-09-07 Nec Kansai Ltd 脆性材料の割断方法
JPH11269683A (ja) 1998-03-18 1999-10-05 Armco Inc 金属表面から酸化物を除去する方法及び装置
US6160835A (en) 1998-03-20 2000-12-12 Rocky Mountain Instrument Co. Hand-held marker with dual output laser
JPH11297703A (ja) 1998-04-15 1999-10-29 Fuji Electric Co Ltd 半導体装置の製造方法
US6256328B1 (en) 1998-05-15 2001-07-03 University Of Central Florida Multiwavelength modelocked semiconductor diode laser
US6308055B1 (en) 1998-05-29 2001-10-23 Silicon Laboratories, Inc. Method and apparatus for operating a PLL for synthesizing high-frequency signals for wireless communications
JPH11347758A (ja) 1998-06-10 1999-12-21 Mitsubishi Heavy Ind Ltd 超精密加工装置
JP3410968B2 (ja) * 1998-06-22 2003-05-26 株式会社東芝 パターン形成方法および感光性組成物
US20020062563A1 (en) 1998-06-29 2002-05-30 Jun Koide Method for processing discharge port of ink jet head, and method for manufacturing ink jet head
US6407360B1 (en) 1998-08-26 2002-06-18 Samsung Electronics, Co., Ltd. Laser cutting apparatus and method
US6124214A (en) 1998-08-27 2000-09-26 Micron Technology, Inc. Method and apparatus for ultrasonic wet etching of silicon
DE19851353C1 (de) 1998-11-06 1999-10-07 Schott Glas Verfahren und Vorrichtung zum Schneiden eines Laminats aus einem sprödbrüchigen Werkstoff und einem Kunststoff
JP3178524B2 (ja) 1998-11-26 2001-06-18 住友重機械工業株式会社 レーザマーキング方法と装置及びマーキングされた部材
JP4547093B2 (ja) 1998-11-30 2010-09-22 コーニング インコーポレイテッド フラットパネルディスプレイ用ガラス
US7649153B2 (en) 1998-12-11 2010-01-19 International Business Machines Corporation Method for minimizing sample damage during the ablation of material using a focused ultrashort pulsed laser beam
US6445491B2 (en) 1999-01-29 2002-09-03 Irma America, Inc. Method and apparatus for optical sectioning and imaging using time-gated parametric image amplification
US6381391B1 (en) 1999-02-19 2002-04-30 The Regents Of The University Of Michigan Method and system for generating a broadband spectral continuum and continuous wave-generating system utilizing same
AU2692100A (en) 1999-02-25 2000-09-14 Seiko Epson Corporation Method for machining work by laser beam
DE19908630A1 (de) 1999-02-27 2000-08-31 Bosch Gmbh Robert Abschirmung gegen Laserstrahlen
JP2001105398A (ja) 1999-03-04 2001-04-17 Seiko Epson Corp 加工方法
US6635849B1 (en) 1999-03-05 2003-10-21 Mitsubishi Denki Kabushiki Kaisha Laser beam machine for micro-hole machining
US6484052B1 (en) 1999-03-30 2002-11-19 The Regents Of The University Of California Optically generated ultrasound for enhanced drug delivery
TWI223581B (en) 1999-04-02 2004-11-01 Murata Manufacturing Co Method for machining ceramic green sheet and apparatus for machining the same
JP2000301372A (ja) 1999-04-23 2000-10-31 Seiko Epson Corp 透明材料のレーザ加工方法
JP2000302488A (ja) 1999-04-23 2000-10-31 Seiko Epson Corp ガラスの微細穴加工方法
US6338901B1 (en) * 1999-05-03 2002-01-15 Guardian Industries Corporation Hydrophobic coating including DLC on substrate
US6373565B1 (en) 1999-05-27 2002-04-16 Spectra Physics Lasers, Inc. Method and apparatus to detect a flaw in a surface of an article
CN2388062Y (zh) 1999-06-21 2000-07-19 郭广宗 一层有孔一层无孔双层玻璃车船窗
US6449301B1 (en) 1999-06-22 2002-09-10 The Regents Of The University Of California Method and apparatus for mode locking of external cavity semiconductor lasers with saturable Bragg reflectors
US6259151B1 (en) 1999-07-21 2001-07-10 Intersil Corporation Use of barrier refractive or anti-reflective layer to improve laser trim characteristics of thin film resistors
US6573026B1 (en) 1999-07-29 2003-06-03 Corning Incorporated Femtosecond laser writing of glass, including borosilicate, sulfide, and lead glasses
CA2380541A1 (en) 1999-07-29 2001-02-08 Corning Incorporated Direct writing of optical devices in silica-based glass using femtosecond pulse lasers
JP2001106545A (ja) 1999-07-30 2001-04-17 Hoya Corp ガラス基板、半導体センサの製造方法および半導体センサ
US6537937B1 (en) 1999-08-03 2003-03-25 Asahi Glass Company, Limited Alkali-free glass
US6391213B1 (en) 1999-09-07 2002-05-21 Komag, Inc. Texturing of a landing zone on glass-based substrates by a chemical etching process
US6344242B1 (en) 1999-09-10 2002-02-05 Mcdonnell Douglas Corporation Sol-gel catalyst for electroless plating
US6234755B1 (en) 1999-10-04 2001-05-22 General Electric Company Method for improving the cooling effectiveness of a gaseous coolant stream, and related articles of manufacture
DE19952331C1 (de) 1999-10-29 2001-08-30 Schott Spezialglas Gmbh Verfahren und Vorrichtung zum schnellen Schneiden eines Werkstücks aus sprödbrüchigem Werkstoff mittels Laserstrahlen
US6479395B1 (en) 1999-11-02 2002-11-12 Alien Technology Corporation Methods for forming openings in a substrate and apparatuses with these openings and methods for creating assemblies with openings
JP2001138083A (ja) 1999-11-18 2001-05-22 Seiko Epson Corp レーザー加工装置及びレーザー照射方法
JP4592855B2 (ja) 1999-12-24 2010-12-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6339208B1 (en) 2000-01-19 2002-01-15 General Electric Company Method of forming cooling holes
US6552301B2 (en) 2000-01-25 2003-04-22 Peter R. Herman Burst-ultrafast laser machining method
US6906795B2 (en) 2000-04-27 2005-06-14 Seiko Epson Corporation Method and apparatus for examining foreign matters in through holes
TW502111B (en) 2000-04-27 2002-09-11 Seiko Epson Corp Inspection method for foreign matters inside through hole
JP2001354439A (ja) 2000-06-12 2001-12-25 Matsushita Electric Ind Co Ltd ガラス基板の加工方法および高周波回路の製作方法
US6420088B1 (en) * 2000-06-23 2002-07-16 International Business Machines Corporation Antireflective silicon-containing compositions as hardmask layer
JP3797068B2 (ja) 2000-07-10 2006-07-12 セイコーエプソン株式会社 レーザによる微細加工方法
US6399914B1 (en) 2000-07-10 2002-06-04 Igor Troitski Method and laser system for production of high quality laser-induced damage images by using material processing made before and during image creation
JP3530114B2 (ja) 2000-07-11 2004-05-24 忠弘 大見 単結晶の切断方法
JP2002040330A (ja) 2000-07-25 2002-02-06 Olympus Optical Co Ltd 光学素子切換え制御装置
US6417109B1 (en) * 2000-07-26 2002-07-09 Aiwa Co., Ltd. Chemical-mechanical etch (CME) method for patterned etching of a substrate surface
JP4786783B2 (ja) 2000-08-18 2011-10-05 日本板硝子株式会社 ガラス板の切断方法及び記録媒体用ガラス円盤
EP1314193A2 (en) * 2000-08-21 2003-05-28 Dow Global Technologies Inc. Organosilicate resins as hardmasks for organic polymer dielectrics in fabrication of microelectronic devices
JP4659300B2 (ja) 2000-09-13 2011-03-30 浜松ホトニクス株式会社 レーザ加工方法及び半導体チップの製造方法
KR100673073B1 (ko) 2000-10-21 2007-01-22 삼성전자주식회사 레이저 빔을 이용한 비금속 기판의 절단 방법 및 장치
JP4512786B2 (ja) 2000-11-17 2010-07-28 独立行政法人産業技術総合研究所 ガラス基板の加工方法
US20020110639A1 (en) 2000-11-27 2002-08-15 Donald Bruns Epoxy coating for optical surfaces
US20020082466A1 (en) 2000-12-22 2002-06-27 Jeongho Han Laser surgical system with light source and video scope
JP4880820B2 (ja) 2001-01-19 2012-02-22 株式会社レーザーシステム レーザ支援加工方法
JP2002228818A (ja) 2001-02-05 2002-08-14 Taiyo Yuden Co Ltd レーザー加工用回折光学素子、レーザー加工装置及びレーザー加工方法
KR20020066005A (ko) * 2001-02-08 2002-08-14 황선우 인쇄회로기판의 코팅방법
JP2002265233A (ja) 2001-03-05 2002-09-18 Nippon Sheet Glass Co Ltd レーザ加工用母材ガラスおよびレーザ加工用ガラス
US20040013951A1 (en) 2001-04-02 2004-01-22 Jun Wang Method for machining translucent material by laser beam and machined translucent material
JP4092890B2 (ja) 2001-05-31 2008-05-28 株式会社日立製作所 マルチチップモジュール
US6740594B2 (en) * 2001-05-31 2004-05-25 Infineon Technologies Ag Method for removing carbon-containing polysilane from a semiconductor without stripping
JP4929538B2 (ja) 2001-06-29 2012-05-09 株式会社デンソー 半導体装置の製造方法
US6754429B2 (en) 2001-07-06 2004-06-22 Corning Incorporated Method of making optical fiber devices and devices thereof
SG108262A1 (en) 2001-07-06 2005-01-28 Inst Data Storage Method and apparatus for cutting a multi-layer substrate by dual laser irradiation
JP3775250B2 (ja) 2001-07-12 2006-05-17 セイコーエプソン株式会社 レーザー加工方法及びレーザー加工装置
JPWO2003007370A1 (ja) 2001-07-12 2004-11-04 株式会社日立製作所 配線ガラス基板およびその製造方法ならびに配線ガラス基板に用いられる導電性ペーストおよび半導体モジュールならびに配線基板および導体形成方法
US6794605B2 (en) 2001-08-02 2004-09-21 Skc Co., Ltd Method for fabricating chemical mechanical polshing pad using laser
KR100820689B1 (ko) 2001-08-10 2008-04-10 미쓰보시 다이야몬도 고교 가부시키가이샤 취성재료기판의 모따기 방법 및 모따기 장치
JP3795778B2 (ja) 2001-08-24 2006-07-12 株式会社ノリタケカンパニーリミテド 水添ビスフェノールａ型エポキシ樹脂を用いたレジノイド研削砥石
ATE326558T1 (de) 2001-08-30 2006-06-15 Aktina Ltd Verfahren zur herstellung poröser keramik-metall verbundwerkstoffe und dadurch erhaltene verbundwerkstoffe
WO2006025347A1 (ja) 2004-08-31 2006-03-09 National University Corporation Tohoku University 銅合金及び液晶表示装置
JP2003114400A (ja) 2001-10-04 2003-04-18 Sumitomo Electric Ind Ltd レーザ光学システムおよびレーザ加工方法
DE10153310A1 (de) * 2001-10-29 2003-05-22 Infineon Technologies Ag Photolithographisches Strukturierungsverfahren mit einer durch ein plasmaunterstützes Abscheideeverfahren hergestellten Kohlenstoff-Hartmaskenschicht diamantartiger Härte
JP2003148931A (ja) 2001-11-16 2003-05-21 Sefa Technology Kk 中空透明体の内径測定方法およびその装置
JP2003154517A (ja) 2001-11-21 2003-05-27 Seiko Epson Corp 脆性材料の割断加工方法およびその装置、並びに電子部品の製造方法
US6720519B2 (en) 2001-11-30 2004-04-13 Matsushita Electric Industrial Co., Ltd. System and method of laser drilling
US6973384B2 (en) 2001-12-06 2005-12-06 Bellsouth Intellectual Property Corporation Automated location-intelligent traffic notification service systems and methods
JP3998984B2 (ja) 2002-01-18 2007-10-31 富士通株式会社 回路基板及びその製造方法
JP2003226551A (ja) 2002-02-05 2003-08-12 Nippon Sheet Glass Co Ltd 微細孔を有するガラス板およびその製造方法
JP2003238178A (ja) 2002-02-21 2003-08-27 Toshiba Ceramics Co Ltd ガス導入用シャワープレート及びその製造方法
JP4267240B2 (ja) 2002-02-22 2009-05-27 日本板硝子株式会社 ガラス構造物の製造方法
ATE493226T1 (de) 2002-03-12 2011-01-15 Hamamatsu Photonics Kk Verfahren zum schneiden eines bearbeiteten objekts
DE10211760A1 (de) 2002-03-14 2003-10-02 Werth Messtechnik Gmbh Anordnung und Verfahren zum Messen von Geometrien bzw. Strukturen von im Wesentlichen zweidimensionalen Objekten mittels Bildverarbeitungssenorik
US6787732B1 (en) 2002-04-02 2004-09-07 Seagate Technology Llc Method for laser-scribing brittle substrates and apparatus therefor
US6744009B1 (en) 2002-04-02 2004-06-01 Seagate Technology Llc Combined laser-scribing and laser-breaking for shaping of brittle substrates
CA2428187C (en) 2002-05-08 2012-10-02 National Research Council Of Canada Method of fabricating sub-micron structures in transparent dielectric materials
US6835663B2 (en) * 2002-06-28 2004-12-28 Infineon Technologies Ag Hardmask of amorphous carbon-hydrogen (a-C:H) layers with tunable etch resistivity
JP2004086137A (ja) 2002-07-01 2004-03-18 Seiko Epson Corp 光トランシーバ及びその製造方法
US6992030B2 (en) 2002-08-29 2006-01-31 Corning Incorporated Low-density glass for flat panel display substrates
US6737345B1 (en) 2002-09-10 2004-05-18 Taiwan Semiconductor Manufacturing Company Scheme to define laser fuse in dual damascene CU process
US6822326B2 (en) * 2002-09-25 2004-11-23 Ziptronix Wafer bonding hermetic encapsulation
US7106342B2 (en) 2002-09-27 2006-09-12 Lg Electronics Inc. Method of controlling brightness of user-selected area for image display device
US7098117B2 (en) 2002-10-18 2006-08-29 The Regents Of The University Of Michigan Method of fabricating a package with substantially vertical feedthroughs for micromachined or MEMS devices
KR100444588B1 (ko) 2002-11-12 2004-08-16 삼성전자주식회사 글래스 웨이퍼의 비아홀 형성방법
GB2395157B (en) 2002-11-15 2005-09-07 Rolls Royce Plc Laser driliing shaped holes
JP3997150B2 (ja) 2002-12-06 2007-10-24 ソニー株式会社 基板製造装置および製造方法
US7880117B2 (en) 2002-12-24 2011-02-01 Panasonic Corporation Method and apparatus of drilling high density submicron cavities using parallel laser beams
JP2004209675A (ja) 2002-12-26 2004-07-29 Kashifuji:Kk 押圧切断装置及び押圧切断方法
KR100497820B1 (ko) 2003-01-06 2005-07-01 로체 시스템즈(주) 유리판절단장치
JP3775410B2 (ja) 2003-02-03 2006-05-17 セイコーエプソン株式会社 レーザー加工方法、レーザー溶接方法並びにレーザー加工装置
KR100512971B1 (ko) 2003-02-24 2005-09-07 삼성전자주식회사 솔더볼을 이용한 마이크로 전자 기계 시스템의 제조 방법
US7407889B2 (en) 2003-03-03 2008-08-05 Nippon Sheet Glass Company, Limited Method of manufacturing article having uneven surface
WO2004078668A1 (ja) 2003-03-03 2004-09-16 Nippon Sheet Glass Company, Limited 凹凸のある表面を有する物品の製造方法
JP2004272014A (ja) 2003-03-10 2004-09-30 Seiko Epson Corp 光通信モジュールの製造方法、光通信モジュール、及び電子機器
DE60315515T2 (de) 2003-03-12 2007-12-13 Hamamatsu Photonics K.K., Hamamatsu Laserstrahlbearbeitungsverfahren
JP3577492B1 (ja) 2003-03-24 2004-10-13 西山ステンレスケミカル株式会社 ガラスの切断分離方法、フラットパネルディスプレイ用ガラス基板及びフラットパネルディスプレイ
MXPA05010987A (es) 2003-04-22 2005-12-12 Coca Cola Co Metodo y aparato para reforzar el vidrio.
JP2004330236A (ja) 2003-05-07 2004-11-25 Mitsubishi Gas Chem Co Inc レーザー孔あけ用補助シート
US7511886B2 (en) 2003-05-13 2009-03-31 Carl Zeiss Smt Ag Optical beam transformation system and illumination system comprising an optical beam transformation system
DE10322376A1 (de) 2003-05-13 2004-12-02 Carl Zeiss Smt Ag Axiconsystem und Beleuchtungssystem damit
FR2855084A1 (fr) 2003-05-22 2004-11-26 Air Liquide Optique de focalisation pour le coupage laser
EP1627007B1 (en) * 2003-05-23 2007-10-31 Dow Corning Corporation Siloxane resin-based anti-reflective coating composition having high wet etch rate
JP2004351494A (ja) 2003-05-30 2004-12-16 Seiko Epson Corp レーザーに対して透明な材料の穴あけ加工方法
JP2004363212A (ja) 2003-06-03 2004-12-24 Hitachi Metals Ltd スルーホール導体を持った配線基板
JP2005019576A (ja) 2003-06-25 2005-01-20 Hitachi Metals Ltd スルーホール導体を持った配線基板
JP2005000952A (ja) 2003-06-12 2005-01-06 Nippon Sheet Glass Co Ltd レーザー加工方法及びレーザー加工装置
JP2005011920A (ja) 2003-06-18 2005-01-13 Hitachi Displays Ltd 表示装置とその製造方法
US7492948B2 (en) 2003-06-26 2009-02-17 Denmarks Tekniske Universitet Generation of a desired wavefront with a plurality of phase contrast filters
AU2004276725A1 (en) 2003-06-27 2005-04-07 Purdue Research Foundation Device for detecting biological and chemical particles
ES2523432T3 (es) 2003-07-18 2014-11-25 Hamamatsu Photonics K.K. Chip semiconductor cortado
US6990285B2 (en) 2003-07-31 2006-01-24 Corning Incorporated Method of making at least one hole in a transparent body and devices made by this method
US7258834B2 (en) 2003-08-01 2007-08-21 Agilent Technologies, Inc. Methods and devices for modifying a substrate surface
TWI269684B (en) 2003-08-08 2007-01-01 Hon Hai Prec Ind Co Ltd A process for laser machining
JP4182841B2 (ja) 2003-08-28 2008-11-19 セイコーエプソン株式会社 単結晶基板の加工方法
JP2005104819A (ja) 2003-09-10 2005-04-21 Nippon Sheet Glass Co Ltd 合せガラスの切断方法及び合せガラス切断装置
JP3974127B2 (ja) 2003-09-12 2007-09-12 株式会社東芝 半導体装置の製造方法
JP4849890B2 (ja) 2003-10-06 2012-01-11 Ｈｏｙａ株式会社 貫通孔を有するガラス部品およびその製造方法
JP4702794B2 (ja) 2003-10-06 2011-06-15 Ｈｏｙａ株式会社 感光性ガラス基板の貫通孔形成方法
US6992371B2 (en) * 2003-10-09 2006-01-31 Freescale Semiconductor, Inc. Device including an amorphous carbon layer for improved adhesion of organic layers and method of fabrication
ES2247890B1 (es) 2003-10-10 2006-11-16 Universitat Politecnica De Catalunya Procedimiento y equipo de metrologia optica para la determinacion de la topografia tridimensional de un orificio, en particular para la medicion de boquillas micrometricas troncoconicas y similares.
JP2005138143A (ja) 2003-11-06 2005-06-02 Disco Abrasive Syst Ltd レーザ光線を利用する加工装置
US7172067B2 (en) 2003-11-10 2007-02-06 Johnson Level & Tool Mfg. Co., Inc. Level case with positioning indentations
JP2005144487A (ja) 2003-11-13 2005-06-09 Seiko Epson Corp レーザ加工装置及びレーザ加工方法
JP2005144622A (ja) 2003-11-18 2005-06-09 Seiko Epson Corp 構造体の製造方法、液滴吐出ヘッド、液滴吐出装置
US7586060B2 (en) 2003-12-25 2009-09-08 Nitto Denko Corporation Protective sheet for laser processing and manufacturing method of laser processed parts
JP4781635B2 (ja) 2004-03-30 2011-09-28 日東電工株式会社 レーザー加工品の製造方法及びレーザー加工用保護シート
KR101035826B1 (ko) 2003-12-30 2011-05-20 코닝 인코포레이티드 고 변형점 유리
US7633033B2 (en) 2004-01-09 2009-12-15 General Lasertronics Corporation Color sensing for laser decoating
JP4349132B2 (ja) 2004-01-09 2009-10-21 アイシン精機株式会社 凹部加工装置
US7316844B2 (en) * 2004-01-16 2008-01-08 Brewer Science Inc. Spin-on protective coatings for wet-etch processing of microelectronic substrates
WO2005068163A1 (ja) 2004-01-16 2005-07-28 Japan Science And Technology Agency 微細加工方法
JP4074589B2 (ja) 2004-01-22 2008-04-09 Ｔｄｋ株式会社 レーザ加工装置及びレーザ加工方法
US7057135B2 (en) 2004-03-04 2006-06-06 Matsushita Electric Industrial, Co. Ltd. Method of precise laser nanomachining with UV ultrafast laser pulses
TWI250910B (en) 2004-03-05 2006-03-11 Olympus Corp Apparatus for laser machining
US7638440B2 (en) * 2004-03-12 2009-12-29 Applied Materials, Inc. Method of depositing an amorphous carbon film for etch hardmask application
JP2005257339A (ja) 2004-03-09 2005-09-22 Heureka Co Ltd 半導体ウエハ検査装置
JP4737709B2 (ja) 2004-03-22 2011-08-03 日本電気硝子株式会社 ディスプレイ基板用ガラスの製造方法
JP4418282B2 (ja) 2004-03-31 2010-02-17 株式会社レーザーシステム レーザ加工方法
JP2005306702A (ja) 2004-04-26 2005-11-04 Namiki Precision Jewel Co Ltd テーパー形状を有する微小穴の形成方法
JP4631044B2 (ja) 2004-05-26 2011-02-16 国立大学法人北海道大学 レーザ加工方法および装置
JP2005340835A (ja) * 2004-05-28 2005-12-08 Hoya Corp 電子線露光用マスクブランクおよびマスク
US7985942B2 (en) 2004-05-28 2011-07-26 Electro Scientific Industries, Inc. Method of providing consistent quality of target material removal by lasers having different output performance characteristics
US7804043B2 (en) 2004-06-15 2010-09-28 Laserfacturing Inc. Method and apparatus for dicing of thin and ultra thin semiconductor wafer using ultrafast pulse laser
KR20060000515A (ko) 2004-06-29 2006-01-06 대주전자재료 주식회사 플라즈마 디스플레이 패널 격벽용 무연 유리 조성물
US7164465B2 (en) 2004-07-13 2007-01-16 Anvik Corporation Versatile maskless lithography system with multiple resolutions
US20060039160A1 (en) 2004-08-23 2006-02-23 Cassarly William J Lighting systems for producing different beam patterns
US7940361B2 (en) 2004-08-31 2011-05-10 Advanced Interconnect Materials, Llc Copper alloy and liquid-crystal display device
JP3887394B2 (ja) 2004-10-08 2007-02-28 芝浦メカトロニクス株式会社 脆性材料の割断加工システム及びその方法
ATE520495T1 (de) 2004-10-25 2011-09-15 Mitsuboshi Diamond Ind Co Ltd Verfahren und vorrichtung zur bildung von rissen
JP4692717B2 (ja) 2004-11-02 2011-06-01 澁谷工業株式会社 脆性材料の割断装置
JP4222296B2 (ja) 2004-11-22 2009-02-12 住友電気工業株式会社 レーザ加工方法とレーザ加工装置
JP2006161124A (ja) 2004-12-09 2006-06-22 Canon Inc 貫通電極の形成方法
US7201965B2 (en) 2004-12-13 2007-04-10 Corning Incorporated Glass laminate substrate having enhanced impact and static loading resistance
JP5037138B2 (ja) 2005-01-05 2012-09-26 Ｔｈｋ株式会社 ワークのブレイク方法及び装置、スクライブ及びブレイク方法、並びにブレイク機能付きスクライブ装置
CN100546004C (zh) 2005-01-05 2009-09-30 Thk株式会社 工件的截断方法和装置、划线和截断方法、以及带截断功能的划线装置
US20060207976A1 (en) 2005-01-21 2006-09-21 Bovatsek James M Laser material micromachining with green femtosecond pulses
KR20070100964A (ko) 2005-02-03 2007-10-15 가부시키가이샤 니콘 광학 적분기, 조명 광학 장치, 노광 장치, 및 노광 방법
JP2006248885A (ja) 2005-02-08 2006-09-21 Takeji Arai 超短パルスレーザによる石英の切断方法
JP2006290630A (ja) 2005-02-23 2006-10-26 Nippon Sheet Glass Co Ltd レーザを用いたガラスの加工方法
US7438824B2 (en) 2005-03-25 2008-10-21 National Research Council Of Canada Fabrication of long range periodic nanostructures in transparent or semitransparent dielectrics
EP1900125A1 (en) 2005-04-14 2008-03-19 Thomson Licensing Automatic replacement of objectionable audio content from audio signals
US20060261118A1 (en) 2005-05-17 2006-11-23 Cox Judy K Method and apparatus for separating a pane of brittle material from a moving ribbon of the material
KR101277390B1 (ko) 2005-05-31 2013-06-20 히다치 비아 메카닉스 가부시키가이샤 프린트 배선판의 제조방법 및 그것에 이용되는 동박을 붙인 적층판 및 처리액
JP4199820B2 (ja) 2005-06-01 2008-12-24 フェトン株式会社 レーザー加工装置及びレーザー加工方法
JP4410159B2 (ja) 2005-06-24 2010-02-03 三菱電機株式会社 交流回転電機
US7425507B2 (en) 2005-06-28 2008-09-16 Micron Technology, Inc. Semiconductor substrates including vias of nonuniform cross section, methods of forming and associated structures
JP4490883B2 (ja) 2005-07-19 2010-06-30 株式会社レーザーシステム レーザ加工装置およびレーザ加工方法
JP4889974B2 (ja) 2005-08-01 2012-03-07 新光電気工業株式会社 電子部品実装構造体及びその製造方法
US7429529B2 (en) 2005-08-05 2008-09-30 Farnworth Warren M Methods of forming through-wafer interconnects and structures resulting therefrom
US7683370B2 (en) 2005-08-17 2010-03-23 Kobe Steel, Ltd. Source/drain electrodes, transistor substrates and manufacture methods, thereof, and display devices
DE102005039833A1 (de) 2005-08-22 2007-03-01 Rowiak Gmbh Vorrichtung und Verfahren zur Materialtrennung mit Laserpulsen
JP2007067031A (ja) 2005-08-30 2007-03-15 Tdk Corp 配線基板の製造方法
US7772115B2 (en) 2005-09-01 2010-08-10 Micron Technology, Inc. Methods for forming through-wafer interconnects, intermediate structures so formed, and devices and systems having at least one solder dam structure
US9138913B2 (en) 2005-09-08 2015-09-22 Imra America, Inc. Transparent material processing with an ultrashort pulse laser
DE102006042280A1 (de) 2005-09-08 2007-06-06 IMRA America, Inc., Ann Arbor Bearbeitung von transparentem Material mit einem Ultrakurzpuls-Laser
JP5308669B2 (ja) 2005-09-12 2013-10-09 日本板硝子株式会社 中間膜分離方法
CN1761378A (zh) 2005-09-20 2006-04-19 沪士电子股份有限公司 直接co2激光钻孔方法
JP4650837B2 (ja) 2005-09-22 2011-03-16 住友電気工業株式会社 レーザ光学装置
JP4424302B2 (ja) 2005-11-16 2010-03-03 株式会社デンソー 半導体チップの製造方法
US20070111480A1 (en) 2005-11-16 2007-05-17 Denso Corporation Wafer product and processing method therefor
US7838331B2 (en) 2005-11-16 2010-11-23 Denso Corporation Method for dicing semiconductor substrate
JP2007142000A (ja) 2005-11-16 2007-06-07 Denso Corp レーザ加工装置およびレーザ加工方法
US7678529B2 (en) * 2005-11-21 2010-03-16 Shin-Etsu Chemical Co., Ltd. Silicon-containing film forming composition, silicon-containing film serving as etching mask, substrate processing intermediate, and substrate processing method
JP4708428B2 (ja) 2005-11-22 2011-06-22 オリンパス株式会社 ガラス基材の加工方法
US7977601B2 (en) 2005-11-28 2011-07-12 Electro Scientific Industries, Inc. X and Y orthogonal cut direction processing with set beam separation using 45 degree beam split orientation apparatus and method
CN101331592B (zh) 2005-12-16 2010-06-16 株式会社半导体能源研究所 激光照射设备、激光照射方法和半导体装置的制造方法
JP4483793B2 (ja) 2006-01-27 2010-06-16 セイコーエプソン株式会社 微細構造体の製造方法及び製造装置
US8007913B2 (en) 2006-02-10 2011-08-30 Corning Incorporated Laminated glass articles and methods of making thereof
US7418181B2 (en) 2006-02-13 2008-08-26 Adc Telecommunications, Inc. Fiber optic splitter module
KR100985428B1 (ko) 2006-02-15 2010-10-05 아사히 가라스 가부시키가이샤 유리 기판의 모따기 방법 및 장치
JP2007220782A (ja) 2006-02-15 2007-08-30 Shin Etsu Chem Co Ltd Ｓｏｉ基板およびｓｏｉ基板の製造方法
US7535634B1 (en) 2006-02-16 2009-05-19 The United States Of America As Represented By The National Aeronautics And Space Administration Optical device, system, and method of generating high angular momentum beams
JP4672689B2 (ja) 2006-02-22 2011-04-20 日本板硝子株式会社 レーザを用いたガラスの加工方法および加工装置
EP1990125B1 (en) 2006-02-22 2011-10-12 Nippon Sheet Glass Company, Limited Glass processing method using laser
WO2007096460A2 (en) 2006-02-23 2007-08-30 Picodeon Ltd Oy Surface treatment technique and surface treatment apparatus associated with ablation technology
GB0605576D0 (en) 2006-03-20 2006-04-26 Oligon Ltd MEMS device
JP2007253203A (ja) 2006-03-24 2007-10-04 Sumitomo Electric Ind Ltd レーザ加工用光学装置
KR101530379B1 (ko) 2006-03-29 2015-06-22 삼성전자주식회사 다공성 글래스 템플릿을 이용한 실리콘 나노 와이어의제조방법 및 이에 의해 형성된 실리콘 나노 와이어를포함하는 소자
US7777275B2 (en) 2006-05-18 2010-08-17 Macronix International Co., Ltd. Silicon-on-insulator structures
WO2007135874A1 (ja) 2006-05-18 2007-11-29 Asahi Glass Company, Limited 透明電極付きガラス基板とその製造方法
JP2007307599A (ja) 2006-05-20 2007-11-29 Sumitomo Electric Ind Ltd スルーホール成形体およびレーザー加工方法
US20070298529A1 (en) 2006-05-31 2007-12-27 Toyoda Gosei, Co., Ltd. Semiconductor light-emitting device and method for separating semiconductor light-emitting devices
US7981810B1 (en) * 2006-06-08 2011-07-19 Novellus Systems, Inc. Methods of depositing highly selective transparent ashable hardmask films
EP1875983B1 (en) 2006-07-03 2013-09-11 Hamamatsu Photonics K.K. Laser processing method and chip
KR20090037856A (ko) 2006-07-12 2009-04-16 아사히 가라스 가부시키가이샤 보호 유리가 부착된 유리 기판, 보호 유리가 부착된 유리 기판을 사용한 표시 장치의 제조 방법 및 박리지용 실리콘
DE102006035555A1 (de) 2006-07-27 2008-01-31 Eliog-Kelvitherm Industrieofenbau Gmbh Anordnung und Verfahren zur Verformung von Glasscheiben
CN101501820B (zh) 2006-08-10 2012-11-28 株式会社爱发科 导电膜形成方法、薄膜晶体管、带薄膜晶体管的面板、及薄膜晶体管的制造方法
US8168514B2 (en) 2006-08-24 2012-05-01 Corning Incorporated Laser separation of thin laminated glass substrates for flexible display applications
EP2065120B1 (en) 2006-09-19 2015-07-01 Hamamatsu Photonics K.K. Laser processing method
JP2008094641A (ja) * 2006-10-06 2008-04-24 Ohara Inc 基板の製造方法
US7534734B2 (en) 2006-11-13 2009-05-19 Corning Incorporated Alkali-free glasses containing iron and tin as fining agents
US20080118159A1 (en) 2006-11-21 2008-05-22 Robert Wendell Sharps Gauge to measure distortion in glass sheet
JP4355743B2 (ja) 2006-12-04 2009-11-04 株式会社神戸製鋼所 Ｃｕ合金配線膜とそのＣｕ合金配線膜を用いたフラットパネルディスプレイ用ＴＦＴ素子、及びそのＣｕ合金配線膜を作製するためのＣｕ合金スパッタリングターゲット
CN101563300B (zh) * 2006-12-20 2012-09-05 陶氏康宁公司 用固化的有机硅树脂组合物涂布或层压的玻璃基底
US8277945B2 (en) * 2006-12-20 2012-10-02 Dow Corning Corporation Glass substrates coated or laminated with multiple layers of cured silicone resin compositions
AT504726A1 (de) 2007-01-05 2008-07-15 Lisec Maschb Gmbh Verfahren und vorrichtung zum herstellen eines trennspalts in einer glasscheibe
US8344286B2 (en) 2007-01-18 2013-01-01 International Business Machines Corporation Enhanced quality of laser ablation by controlling laser repetition rate
US20080194109A1 (en) * 2007-02-14 2008-08-14 Renesas Technology Corp. Method of fabricating a semiconductor device
JP5318748B2 (ja) 2007-02-22 2013-10-16 日本板硝子株式会社 陽極接合用ガラス
US8642246B2 (en) * 2007-02-26 2014-02-04 Honeywell International Inc. Compositions, coatings and films for tri-layer patterning applications and methods of preparation thereof
JP5483821B2 (ja) 2007-02-27 2014-05-07 ＡｖａｎＳｔｒａｔｅ株式会社 表示装置用ガラス基板および表示装置
TWI394731B (zh) 2007-03-02 2013-05-01 Nippon Electric Glass Co 強化板玻璃及其製造方法
CN101021490B (zh) 2007-03-12 2012-11-14 3i系统公司 平面基板自动检测系统及方法
US8110425B2 (en) * 2007-03-20 2012-02-07 Luminus Devices, Inc. Laser liftoff structure and related methods
WO2008119080A1 (en) 2007-03-28 2008-10-02 Life Bioscience Inc. Compositions and methods to fabricate a photoactive substrate suitable for shaped glass structures
JP5154814B2 (ja) * 2007-03-29 2013-02-27 東ソー・クォーツ株式会社 石英ガラス材料の製造方法
KR101333518B1 (ko) 2007-04-05 2013-11-28 참엔지니어링(주) 레이저 가공 방법 및 절단 방법 및 다층 기판을 가지는 구조체의 분할 방법
JP2008288577A (ja) 2007-04-18 2008-11-27 Fujikura Ltd 基板の処理方法、貫通配線基板及びその製造方法、並びに電子部品
DE102007018674A1 (de) 2007-04-18 2008-10-23 Lzh Laserzentrum Hannover E.V. Verfahren zum Bilden von Durchgangslöchern in Bauteilen aus Glas
JP4882854B2 (ja) * 2007-04-27 2012-02-22 セントラル硝子株式会社 ガラス用コーティング組成物
JP5172203B2 (ja) 2007-05-16 2013-03-27 大塚電子株式会社 光学特性測定装置および測定方法
JP2009013046A (ja) 2007-06-05 2009-01-22 Asahi Glass Co Ltd ガラス基板表面を加工する方法
US8236116B2 (en) 2007-06-06 2012-08-07 Centre Luxembourgeois De Recherches Pour Le Verre Et Al Ceramique S.A. (C.R.V.C.) Method of making coated glass article, and intermediate product used in same
JP5435394B2 (ja) 2007-06-08 2014-03-05 日本電気硝子株式会社 強化ガラス基板及びその製造方法
ATE545152T1 (de) 2007-07-05 2012-02-15 Aac Microtec Ab Durchkontaktierung durch einen wafer mit niedrigem widerstand
US20090029189A1 (en) * 2007-07-25 2009-01-29 Fujifilm Corporation Imprint mold structure, and imprinting method using the same, as well as magnetic recording medium, and method for manufacturing magnetic recording medium
US8169587B2 (en) 2007-08-16 2012-05-01 Apple Inc. Methods and systems for strengthening LCD modules
JP5113462B2 (ja) 2007-09-12 2013-01-09 三星ダイヤモンド工業株式会社 脆性材料基板の面取り方法
US8192642B2 (en) 2007-09-13 2012-06-05 Brewer Science Inc. Spin-on protective coatings for wet-etch processing of microelectronic substrates
WO2009042212A2 (en) 2007-09-26 2009-04-02 Aradigm Corporation Impinging jet nozzles in stretched or deformed substrates
CN100494879C (zh) 2007-10-08 2009-06-03 天津大学 基于线结构光视觉传感器实现空间圆孔几何参数测量方法
KR101235617B1 (ko) 2007-10-16 2013-02-28 미쓰보시 다이야몬도 고교 가부시키가이샤 취성 재료 기판의 ｕ자 형상 홈 가공 방법 및 이것을 사용한 제거 가공 방법 및 도려내기 가공 방법 및 모따기 방법
US20090219491A1 (en) 2007-10-18 2009-09-03 Evans & Sutherland Computer Corporation Method of combining multiple Gaussian beams for efficient uniform illumination of one-dimensional light modulators
JP5404010B2 (ja) 2007-11-22 2014-01-29 味の素株式会社 多層プリント配線板の製造方法及び多層プリント配線板
EP2227444B1 (en) 2007-11-29 2019-02-20 Corning Incorporated Glasses having improved toughness and scratch resistance
KR20090057161A (ko) 2007-12-01 2009-06-04 주식회사 이엔팩 초발수성 좌변기 시트
KR100868228B1 (ko) 2007-12-04 2008-11-11 주식회사 켐트로닉스 유리 기판용 식각액 조성물
IL188029A0 (en) 2007-12-10 2008-11-03 Nova Measuring Instr Ltd Optical method and system
US7749809B2 (en) 2007-12-17 2010-07-06 National Semiconductor Corporation Methods and systems for packaging integrated circuits
CN101903301B (zh) 2007-12-18 2012-12-19 Hoya株式会社 便携式终端用防护玻璃及其制造方法、以及便携式终端装置
CN101462822B (zh) 2007-12-21 2012-08-29 鸿富锦精密工业（深圳）有限公司 具有通孔的脆性非金属工件及其加工方法
KR100930672B1 (ko) * 2008-01-11 2009-12-09 제일모직주식회사 실리콘계 하드마스크 조성물 및 이를 이용한 반도체집적회로 디바이스의 제조방법
US20090183764A1 (en) 2008-01-18 2009-07-23 Tenksolar, Inc Detachable Louver System
CN102015196A (zh) 2008-02-28 2011-04-13 株式会社维塞微技术 贯通孔形成方法及贯通孔形成加工产品
JP4423379B2 (ja) 2008-03-25 2010-03-03 合同会社先端配線材料研究所 銅配線、半導体装置および銅配線の形成方法
US8237080B2 (en) 2008-03-27 2012-08-07 Electro Scientific Industries, Inc Method and apparatus for laser drilling holes with Gaussian pulses
FR2929449A1 (fr) 2008-03-28 2009-10-02 Stmicroelectronics Tours Sas S Procede de formation d'une couche d'amorcage de depot d'un metal sur un substrat
JP5345334B2 (ja) 2008-04-08 2013-11-20 株式会社レミ 脆性材料の熱応力割断方法
JP5274085B2 (ja) 2008-04-09 2013-08-28 株式会社アルバック レーザー加工装置、レーザービームのピッチ可変方法、及びレーザー加工方法
US8358888B2 (en) 2008-04-10 2013-01-22 Ofs Fitel, Llc Systems and techniques for generating Bessel beams
TWI414502B (zh) 2008-05-13 2013-11-11 Corning Inc 含稀土元素之玻璃材料及基板及含該基板之裝置
PL2119512T3 (pl) 2008-05-14 2018-02-28 Gerresheimer Glas Gmbh Sposób i urządzenie do usuwania cząstek zanieczyszczeń z pojemników w automatycznym systemie wytwarzania
US8053704B2 (en) 2008-05-27 2011-11-08 Corning Incorporated Scoring of non-flat materials
JP2009297734A (ja) 2008-06-11 2009-12-24 Nitto Denko Corp レーザー加工用粘着シート及びレーザー加工方法
US8514476B2 (en) 2008-06-25 2013-08-20 View, Inc. Multi-pane dynamic window and method for making same
US7810355B2 (en) 2008-06-30 2010-10-12 Apple Inc. Full perimeter chemical strengthening of substrates
US9010153B2 (en) 2008-07-02 2015-04-21 Corning Incorporated Method of making shaped glass articles
CN102077323A (zh) 2008-07-03 2011-05-25 株式会社神户制钢所 配线结构、薄膜晶体管基板及其制造方法、以及显示装置
EP2546209B1 (en) 2008-08-08 2015-10-07 Corning Incorporated Strengthened glass articles and methods of making
JP5155774B2 (ja) 2008-08-21 2013-03-06 株式会社ノリタケカンパニーリミテド プラトー面加工用レジノイド超砥粒砥石ホイール
US8257603B2 (en) 2008-08-29 2012-09-04 Corning Incorporated Laser patterning of glass bodies
EP2328027B1 (en) * 2008-09-04 2018-01-17 Hitachi Chemical Company, Ltd. Positive-type photosensitive resin composition, method for producing resist pattern, and uses of said resist pattern
US20100068453A1 (en) 2008-09-18 2010-03-18 Hirofumi Imai Method for producing processed glass substrate
JP5339830B2 (ja) 2008-09-22 2013-11-13 三菱マテリアル株式会社 密着性に優れた薄膜トランジスター用配線膜およびこの配線膜を形成するためのスパッタリングターゲット
JP2010075991A (ja) 2008-09-29 2010-04-08 Fujifilm Corp レーザ加工装置
JP5015892B2 (ja) * 2008-10-02 2012-08-29 信越化学工業株式会社 ケイ素含有膜形成用組成物、ケイ素含有膜形成基板及びパターン形成方法
US8445394B2 (en) 2008-10-06 2013-05-21 Corning Incorporated Intermediate thermal expansion coefficient glass
JP5297139B2 (ja) 2008-10-09 2013-09-25 新光電気工業株式会社 配線基板及びその製造方法
US8455357B2 (en) 2008-10-10 2013-06-04 Taiwan Semiconductor Manufacturing Co., Ltd. Method of plating through wafer vias in a wafer for 3D packaging
EP2338171B1 (en) 2008-10-15 2015-09-23 ÅAC Microtec AB Method for making an interconnection via
CN101722367A (zh) 2008-10-17 2010-06-09 华通电脑股份有限公司 印刷电路板的激光钻孔方法
US8895892B2 (en) 2008-10-23 2014-11-25 Corning Incorporated Non-contact glass shearing device and method for scribing or cutting a moving glass sheet
JP5360959B2 (ja) 2008-10-24 2013-12-04 三菱マテリアル株式会社 バリア膜とドレイン電極膜およびソース電極膜が高い密着強度を有する薄膜トランジスター
US20100119808A1 (en) 2008-11-10 2010-05-13 Xinghua Li Method of making subsurface marks in glass
US8092739B2 (en) 2008-11-25 2012-01-10 Wisconsin Alumni Research Foundation Retro-percussive technique for creating nanoscale holes
US9346130B2 (en) 2008-12-17 2016-05-24 Electro Scientific Industries, Inc. Method for laser processing glass with a chamfered edge
EP2202545A1 (en) 2008-12-23 2010-06-30 Karlsruher Institut für Technologie Beam transformation module with an axicon in a double-pass mode
US8367516B2 (en) 2009-01-14 2013-02-05 Taiwan Semiconductor Manufacturing Company, Ltd. Laser bonding for stacking semiconductor substrates
KR101020621B1 (ko) 2009-01-15 2011-03-09 연세대학교 산학협력단 광섬유를 이용하는 광소자 제조 방법, 광섬유를 이용하는 광소자 및 이를 이용한 광 트위저
JP4567091B1 (ja) 2009-01-16 2010-10-20 株式会社神戸製鋼所 表示装置用Ｃｕ合金膜および表示装置
JPWO2010087483A1 (ja) 2009-02-02 2012-08-02 旭硝子株式会社 半導体デバイス部材用ガラス基板および半導体デバイス部材用ガラス基板の製造方法
US8341976B2 (en) 2009-02-19 2013-01-01 Corning Incorporated Method of separating strengthened glass
US8327666B2 (en) 2009-02-19 2012-12-11 Corning Incorporated Method of separating strengthened glass
US8347651B2 (en) 2009-02-19 2013-01-08 Corning Incorporated Method of separating strengthened glass
US8245540B2 (en) 2009-02-24 2012-08-21 Corning Incorporated Method for scoring a sheet of brittle material
JP5573832B2 (ja) 2009-02-25 2014-08-20 日亜化学工業株式会社 半導体素子の製造方法
CN101502914A (zh) 2009-03-06 2009-08-12 苏州德龙激光有限公司 用于喷油嘴微孔加工的皮秒激光加工装置
CN201357287Y (zh) 2009-03-06 2009-12-09 苏州德龙激光有限公司 新型皮秒激光加工装置
JP5300544B2 (ja) 2009-03-17 2013-09-25 株式会社ディスコ 光学系及びレーザ加工装置
KR101446971B1 (ko) 2009-03-19 2014-10-06 니폰 덴키 가라스 가부시키가이샤 무알칼리 유리
JP5201048B2 (ja) 2009-03-25 2013-06-05 富士通株式会社 半導体装置とその製造方法
KR101041140B1 (ko) 2009-03-25 2011-06-13 삼성모바일디스플레이주식회사 기판 절단 방법
US20100252959A1 (en) 2009-03-27 2010-10-07 Electro Scientific Industries, Inc. Method for improved brittle materials processing
US20100279067A1 (en) 2009-04-30 2010-11-04 Robert Sabia Glass sheet having enhanced edge strength
JP5514302B2 (ja) 2009-05-06 2014-06-04 コーニング インコーポレイテッド ガラス基板用の担体
ATE551304T1 (de) 2009-05-13 2012-04-15 Corning Inc Verfahren und anlagen zum formen von endlosen glasscheiben
US8132427B2 (en) 2009-05-15 2012-03-13 Corning Incorporated Preventing gas from occupying a spray nozzle used in a process of scoring a hot glass sheet
US8269138B2 (en) 2009-05-21 2012-09-18 Corning Incorporated Method for separating a sheet of brittle material
DE102009023602B4 (de) 2009-06-02 2012-08-16 Grenzebach Maschinenbau Gmbh Vorrichtung zum industriellen Herstellen elastisch verformbarer großflächiger Glasplatten in hoher Stückzahl
US8925192B2 (en) 2009-06-09 2015-01-06 Ibiden Co., Ltd. Printed wiring board and method for manufacturing the same
JP5416492B2 (ja) 2009-06-30 2014-02-12 三星ダイヤモンド工業株式会社 レーザ光によるガラス基板加工装置
TWI395630B (zh) 2009-06-30 2013-05-11 Mitsuboshi Diamond Ind Co Ltd 使用雷射光之玻璃基板加工裝置
JP5594522B2 (ja) * 2009-07-03 2014-09-24 日本電気硝子株式会社 電子デバイス製造用ガラスフィルム積層体
US8592716B2 (en) 2009-07-22 2013-11-26 Corning Incorporated Methods and apparatus for initiating scoring
CN201471092U (zh) 2009-08-07 2010-05-19 苏州德龙激光有限公司 皮秒激光加工设备的高精度z轴载物平台
CN101637849B (zh) 2009-08-07 2011-12-07 苏州德龙激光有限公司 皮秒激光加工设备的高精度z轴载物平台
JP5500914B2 (ja) 2009-08-27 2014-05-21 株式会社半導体エネルギー研究所 レーザ照射装置
US8932510B2 (en) 2009-08-28 2015-01-13 Corning Incorporated Methods for laser cutting glass substrates
JP2013503105A (ja) 2009-08-28 2013-01-31 コーニング インコーポレイテッド 化学強化ガラス基板からガラス品をレーザ割断するための方法
KR101094284B1 (ko) 2009-09-02 2011-12-19 삼성모바일디스플레이주식회사 기판 절단 장치 및 이를 이용한 기판 절단 방법
WO2011034034A1 (ja) * 2009-09-18 2011-03-24 日本電気硝子株式会社 ガラスフィルムの製造方法及びガラスフィルムの処理方法並びにガラスフィルム積層体
DE112010003715T8 (de) 2009-09-20 2013-01-31 Viagan Ltd. Baugruppenbildung von elektronischen Bauelementen auf Waferebene
JP2011079690A (ja) 2009-10-06 2011-04-21 Leo:Kk 回折格子を用いた厚板ガラスのレーザ熱応力割断
US20110088324A1 (en) 2009-10-20 2011-04-21 Wessel Robert B Apparatus and method for solar heat gain reduction in a window assembly
JP2013509414A (ja) * 2009-10-28 2013-03-14 ダウ コーニング コーポレーション ポリシラン−ポリシラザン共重合体、並びに、それらの調製及び使用方法
KR101117573B1 (ko) 2009-10-29 2012-02-29 한국기계연구원 하이브리드 공정을 이용한 ｔｓｖ 가공방법
CN102596831B (zh) 2009-11-03 2015-01-07 康宁股份有限公司 具有非恒定速度的移动玻璃带的激光刻划
US20110132883A1 (en) 2009-12-07 2011-06-09 Panasonic Corporation Methods for precise laser micromachining
US8338745B2 (en) 2009-12-07 2012-12-25 Panasonic Corporation Apparatus and methods for drilling holes with no taper or reverse taper
US20120234807A1 (en) 2009-12-07 2012-09-20 J.P. Sercel Associates Inc. Laser scribing with extended depth affectation into a workplace
US8759951B2 (en) * 2009-12-11 2014-06-24 Sharp Kabushiki Kaisha Method for manufacturing semiconductor device, and semiconductor device
JP2011143434A (ja) 2010-01-14 2011-07-28 Hitachi Via Mechanics Ltd レーザ穴あけ方法
TWI438162B (zh) 2010-01-27 2014-05-21 Wintek Corp 強化玻璃切割方法及強化玻璃切割預置結構
US8048810B2 (en) * 2010-01-29 2011-11-01 Taiwan Semiconductor Manufacturing Company, Ltd. Method for metal gate N/P patterning
MX2012009047A (es) 2010-02-04 2012-11-12 Echelon Laser Systems Lp Sistema y metodo de grabado por laser.
DE112011100505T5 (de) 2010-02-10 2013-03-28 Life Bioscience, Inc. Verfahren zur herstellung eines fotoaktiven substrats, das zur mikrofertigung geeignet ist
US9913726B2 (en) 2010-02-24 2018-03-13 Globus Medical, Inc. Expandable intervertebral spacer and method of posterior insertion thereof
JP2011178642A (ja) 2010-03-03 2011-09-15 Nippon Sheet Glass Co Ltd 貫通電極付きガラス板の製造方法および電子部品
CN102947931A (zh) 2010-03-03 2013-02-27 佐治亚技术研究公司 无机中介片上的贯通封装过孔（tpv）结构及其加工方法
US8743165B2 (en) 2010-03-05 2014-06-03 Micronic Laser Systems Ab Methods and device for laser processing
US20110229687A1 (en) 2010-03-19 2011-09-22 Qualcomm Incorporated Through Glass Via Manufacturing Process
US8654538B2 (en) 2010-03-30 2014-02-18 Ibiden Co., Ltd. Wiring board and method for manufacturing the same
JP5513227B2 (ja) 2010-04-08 2014-06-04 株式会社フジクラ 微細構造の形成方法、レーザー照射装置、及び基板
US20110248405A1 (en) 2010-04-09 2011-10-13 Qualcomm Incorporated Selective Patterning for Low Cost through Vias
DE202010017893U1 (de) 2010-04-09 2013-01-24 Trumpf Werkzeugmaschinen Gmbh + Co. Kg Werkstücküberzug und damit überzogenes Werkstück
JPWO2011132600A1 (ja) 2010-04-20 2013-07-18 旭硝子株式会社 半導体デバイス貫通電極用のガラス基板
KR101259349B1 (ko) 2010-04-21 2013-04-30 주식회사 엘지화학 유리시트 커팅 장치
JP5676908B2 (ja) 2010-04-21 2015-02-25 上村工業株式会社 プリント配線基板の表面処理方法及び表面処理剤
DE202010006047U1 (de) 2010-04-22 2010-07-22 Trumpf Werkzeugmaschinen Gmbh + Co. Kg Strahlformungseinheit zur Fokussierung eines Laserstrahls
US8389889B2 (en) 2010-04-22 2013-03-05 Lawrence Livermore National Security, Llc Method and system for laser-based formation of micro-shapes in surfaces of optical elements
CN102473426B (zh) 2010-04-27 2015-04-15 旭硝子株式会社 磁盘以及信息记录媒体用玻璃基板的制造方法
US9476842B2 (en) 2010-05-03 2016-10-25 United Technologies Corporation On-the-fly dimensional imaging inspection
US8245539B2 (en) 2010-05-13 2012-08-21 Corning Incorporated Methods of producing glass sheets
CN102892833B (zh) 2010-05-19 2016-01-06 三菱化学株式会社 卡用片及卡
JP5796936B2 (ja) 2010-06-01 2015-10-21 キヤノン株式会社 多孔質ガラスの製造方法
US9213451B2 (en) 2010-06-04 2015-12-15 Apple Inc. Thin glass for touch panel sensors and methods therefor
GB2481190B (en) 2010-06-04 2015-01-14 Plastic Logic Ltd Laser ablation
US8411459B2 (en) 2010-06-10 2013-04-02 Taiwan Semiconductor Manufacturing Company, Ltd Interposer-on-glass package structures
SG177021A1 (en) * 2010-06-16 2012-01-30 Univ Nanyang Tech Micoelectrode array sensor for detection of heavy metals in aqueous solutions
US8225252B2 (en) 2010-06-25 2012-07-17 Intel Corporation Systems, methods, apparatus and computer readable mediums for use in association with systems having interference
WO2012005941A1 (en) 2010-06-29 2012-01-12 Corning Incorporated Multi-layer glass sheet made by co-drawing using the overflow downdraw fusion process
DE102010025968B4 (de) 2010-07-02 2016-06-02 Schott Ag Erzeugung von Mikrolöchern
DE102010025967B4 (de) 2010-07-02 2015-12-10 Schott Ag Verfahren zur Erzeugung einer Vielzahl von Löchern, Vorrichtung hierzu und Glas-Interposer
DE102010025966B4 (de) 2010-07-02 2012-03-08 Schott Ag Interposer und Verfahren zum Herstellen von Löchern in einem Interposer
DE102010025965A1 (de) 2010-07-02 2012-01-05 Schott Ag Verfahren zur spannungsarmen Herstellung von gelochten Werkstücken
DE202010013161U1 (de) 2010-07-08 2011-03-31 Oerlikon Solar Ag, Trübbach Laserbearbeitung mit mehreren Strahlen und dafür geeigneter Laseroptikkopf
WO2012008343A1 (ja) 2010-07-12 2012-01-19 旭硝子株式会社 インプリントモールド用ＴｉＯ２含有石英ガラス基材およびその製造方法
CA2805003C (en) 2010-07-12 2017-05-30 S. Abbas Hosseini Method of material processing by laser filamentation
US8999179B2 (en) 2010-07-13 2015-04-07 Taiwan Semiconductor Manufacturing Company, Ltd. Conductive vias in a substrate
KR20120008353A (ko) 2010-07-16 2012-01-30 삼성에스디아이 주식회사 연료 전지 시스템 및 그것에서의 전력 관리 방법
KR20120015366A (ko) 2010-07-19 2012-02-21 엘지디스플레이 주식회사 강화유리 절단방법 및 절단장치
JP5580129B2 (ja) 2010-07-20 2014-08-27 株式会社アマダ 固体レーザ加工装置
JP2012027159A (ja) 2010-07-21 2012-02-09 Kobe Steel Ltd 表示装置
JP2012024983A (ja) 2010-07-21 2012-02-09 Shibuya Kogyo Co Ltd 脆性材料の面取り方法とその装置
JP5669001B2 (ja) 2010-07-22 2015-02-12 日本電気硝子株式会社 ガラスフィルムの割断方法、ガラスロールの製造方法、及びガラスフィルムの割断装置
JP5729932B2 (ja) 2010-07-22 2015-06-03 キヤノン株式会社 基板貫通孔内への金属充填方法
CN103025478B (zh) 2010-07-26 2015-09-30 浜松光子学株式会社 基板加工方法
CN103026486B (zh) 2010-07-26 2016-08-03 浜松光子学株式会社 中介物的制造方法
JP5574866B2 (ja) 2010-07-26 2014-08-20 浜松ホトニクス株式会社 レーザ加工方法
CN103025675B (zh) 2010-07-26 2015-10-14 旭硝子株式会社 无碱保护玻璃组合物及使用该玻璃组合物的光提取构件
CN103025473B (zh) 2010-07-26 2015-12-09 浜松光子学株式会社 基板加工方法
WO2012014709A1 (ja) 2010-07-26 2012-02-02 浜松ホトニクス株式会社 レーザ加工方法
WO2012014720A1 (ja) 2010-07-26 2012-02-02 浜松ホトニクス株式会社 レーザ加工方法
WO2012014710A1 (ja) 2010-07-26 2012-02-02 浜松ホトニクス株式会社 レーザ加工方法
JP2012031018A (ja) 2010-07-30 2012-02-16 Asahi Glass Co Ltd 強化ガラス基板及び強化ガラス基板の溝加工方法と強化ガラス基板の切断方法
US8604380B2 (en) 2010-08-19 2013-12-10 Electro Scientific Industries, Inc. Method and apparatus for optimally laser marking articles
US20120052302A1 (en) 2010-08-24 2012-03-01 Matusick Joseph M Method of strengthening edge of glass article
US8584354B2 (en) 2010-08-26 2013-11-19 Corning Incorporated Method for making glass interposer panels
US8690342B2 (en) 2010-08-31 2014-04-08 Corning Incorporated Energy transfer in scanning laser projectors
TWI513670B (zh) 2010-08-31 2015-12-21 Corning Inc 分離強化玻璃基板之方法
TWI402228B (zh) 2010-09-15 2013-07-21 Wintek Corp 強化玻璃切割方法、強化玻璃薄膜製程、強化玻璃切割預置結構及強化玻璃切割件
GB201017506D0 (en) 2010-10-15 2010-12-01 Rolls Royce Plc Hole inspection
US8021950B1 (en) 2010-10-26 2011-09-20 International Business Machines Corporation Semiconductor wafer processing method that allows device regions to be selectively annealed following back end of the line (BEOL) metal wiring layer formation
US8887529B2 (en) 2010-10-29 2014-11-18 Corning Incorporated Method and apparatus for cutting glass ribbon
JP5874304B2 (ja) 2010-11-02 2016-03-02 日本電気硝子株式会社 無アルカリガラス
US20120105095A1 (en) 2010-11-03 2012-05-03 International Business Machines Corporation Silicon-on-insulator (soi) body-contact pass gate structure
JP5617556B2 (ja) 2010-11-22 2014-11-05 日本電気硝子株式会社 帯状ガラスフィルム割断装置及び帯状ガラスフィルム割断方法
US8616024B2 (en) 2010-11-30 2013-12-31 Corning Incorporated Methods for forming grooves and separating strengthened glass substrate sheets
WO2012075072A2 (en) 2010-11-30 2012-06-07 Corning Incorporated Methods of forming high-density arrays of holes in glass
US8607590B2 (en) 2010-11-30 2013-12-17 Corning Incorporated Methods for separating glass articles from strengthened glass substrate sheets
US8796165B2 (en) 2010-11-30 2014-08-05 Corning Incorporated Alkaline earth alumino-borosilicate crack resistant glass
US20120135853A1 (en) 2010-11-30 2012-05-31 Jaymin Amin Glass articles/materials for use as touchscreen substrates
US20120142136A1 (en) 2010-12-01 2012-06-07 Honeywell International Inc. Wafer level packaging process for mems devices
CN102485405B (zh) 2010-12-02 2014-08-27 詹诺普蒂克自动化技术有限公司 用来制造用于安全气囊的单层覆盖物的方法
TW201226345A (en) 2010-12-27 2012-07-01 Liefco Optical Inc Method of cutting tempered glass
KR101298019B1 (ko) 2010-12-28 2013-08-26 (주)큐엠씨 레이저 가공 장치
KR101159697B1 (ko) 2010-12-30 2012-06-26 광주과학기술원 글래스 웨이퍼 기반의 침습형 전극 제작방법
AU2011353979B2 (en) 2011-01-05 2016-03-03 Yuki Engineering System Co., Ltd Beam processing device
US20120168412A1 (en) 2011-01-05 2012-07-05 Electro Scientific Industries, Inc Apparatus and method for forming an aperture in a substrate
WO2012096053A1 (ja) 2011-01-11 2012-07-19 旭硝子株式会社 強化ガラス板の切断方法
CN107244806A (zh) 2011-01-25 2017-10-13 康宁股份有限公司 具有高热稳定性和化学稳定性的玻璃组合物
JP2012159749A (ja) 2011-02-01 2012-08-23 Nichia Chem Ind Ltd ベッセルビーム発生装置
US8539794B2 (en) 2011-02-01 2013-09-24 Corning Incorporated Strengthened glass substrate sheets and methods for fabricating glass panels from glass substrate sheets
US8933367B2 (en) 2011-02-09 2015-01-13 Sumitomo Electric Industries, Ltd. Laser processing method
WO2012108052A1 (ja) 2011-02-10 2012-08-16 信越ポリマー株式会社 単結晶基板製造方法および内部改質層形成単結晶部材
KR20130103623A (ko) 2011-02-10 2013-09-23 신에츠 폴리머 가부시키가이샤 단결정 기판의 제조 방법 및 내부 개질층 형성 단결정 부재의 제조 방법
DE102011000768B4 (de) 2011-02-16 2016-08-18 Ewag Ag Laserbearbeitungsverfahren und Laserbearbeitungsvorrichtung mit umschaltbarer Laseranordnung
US8584490B2 (en) 2011-02-18 2013-11-19 Corning Incorporated Laser cutting method
JP5193326B2 (ja) 2011-02-25 2013-05-08 三星ダイヤモンド工業株式会社 基板加工装置および基板加工方法
JP2012187618A (ja) 2011-03-11 2012-10-04 V Technology Co Ltd ガラス基板のレーザ加工装置
US20120235969A1 (en) 2011-03-15 2012-09-20 Qualcomm Mems Technologies, Inc. Thin film through-glass via and methods for forming same
WO2012126718A1 (en) 2011-03-21 2012-09-27 Asml Netherlands B.V. Method and apparatus for determining structure parameters of microstructures
TWI469936B (zh) 2011-03-31 2015-01-21 Avanstrate Inc Manufacture of glass plates
KR101256931B1 (ko) 2011-04-07 2013-04-19 (주) 네톰 무선인식 태그 및 이를 구비한 전자제품 피씨비 및 전자제품 관리 시스템
KR101186464B1 (ko) 2011-04-13 2012-09-27 에스엔유 프리시젼 주식회사 Ｔｓｖ 측정용 간섭계 및 이를 이용한 측정방법
US20120276743A1 (en) 2011-04-26 2012-11-01 Jai-Hyung Won Methods of forming a carbon type hard mask layer using induced coupled plasma and methods of forming patterns using the same
JP5785121B2 (ja) * 2011-04-28 2015-09-24 信越化学工業株式会社 パターン形成方法
GB2490354A (en) 2011-04-28 2012-10-31 Univ Southampton Laser with axially-symmetric beam profile
US8796410B2 (en) * 2011-05-23 2014-08-05 Shin-Etsu Chemical Co., Ltd. Polymer having silphenylene and siloxane structures, a method of preparing the same, an adhesive composition, an adhesive sheet, a protective material for a semiconductor device, and a semiconductor device
WO2012161317A1 (ja) 2011-05-25 2012-11-29 株式会社フジクラ 微細孔を配した基体の製造方法、及び微細孔を配した基体
US8986072B2 (en) 2011-05-26 2015-03-24 Corning Incorporated Methods of finishing an edge of a glass sheet
WO2012164649A1 (ja) 2011-05-27 2012-12-06 浜松ホトニクス株式会社 レーザ加工方法
CN102795596B (zh) 2011-05-27 2014-12-10 中国科学院物理研究所 超小2nm直径金属纳米孔的超快激光脉冲法制备
TWI547454B (zh) 2011-05-31 2016-09-01 康寧公司 於玻璃中高速製造微孔洞的方法
WO2012172960A1 (ja) 2011-06-15 2012-12-20 旭硝子株式会社 ガラス板の切断方法
JP2013007842A (ja) 2011-06-23 2013-01-10 Toyo Seikan Kaisha Ltd 構造体形成装置、構造体形成方法及び構造体
CN103619528B (zh) 2011-06-28 2015-09-09 株式会社Ihi 切断脆性构件的装置、方法以及被切断的脆性构件
WO2013008344A1 (ja) 2011-07-14 2013-01-17 株式会社島津製作所 プラズマ処理装置
CN102304323B (zh) * 2011-07-22 2013-05-22 绵阳惠利电子材料有限公司 一种可室温固化的苯基硅树脂敷形涂料
TWI572480B (zh) 2011-07-25 2017-03-01 康寧公司 經層壓及離子交換之強化玻璃疊層
CN102319960A (zh) 2011-07-27 2012-01-18 苏州德龙激光有限公司 超短脉冲激光制作金属薄膜群孔的装置及其方法
DE112012003162T5 (de) 2011-07-29 2014-04-17 Ats Automation Tooling Systems Inc. Systeme und Verfahren zum Herstellen dünner Siliziumstäbe
KR101120471B1 (ko) 2011-08-05 2012-03-05 (주)지엘코어 다중 초점 방식의 펄스 레이저를 이용한 취성 재료 절단 장치
US8635887B2 (en) 2011-08-10 2014-01-28 Corning Incorporated Methods for separating glass substrate sheets by laser-formed grooves
JP2013043808A (ja) 2011-08-25 2013-03-04 Asahi Glass Co Ltd 強化ガラス板切断用保持具及び強化ガラス板の切断方法
AU2011101310A4 (en) 2011-08-26 2011-11-10 Sterlite Technologies Limited Glass composition for strengthened cover glass
JPWO2013031655A1 (ja) 2011-08-29 2015-03-23 旭硝子株式会社 強化ガラス板の切断方法、および強化ガラス板切断装置
US20130050226A1 (en) 2011-08-30 2013-02-28 Qualcomm Mems Technologies, Inc. Die-cut through-glass via and methods for forming same
WO2013031778A1 (ja) 2011-08-31 2013-03-07 旭硝子株式会社 強化ガラス板の切断方法、および強化ガラス板切断装置
PH12012000258B1 (en) 2011-09-09 2015-06-01 Hoya Corp Method of manufacturing an ion-exchanged glass article
US9010151B2 (en) 2011-09-15 2015-04-21 Nippon Electric Glass Co., Ltd. Glass sheet cutting method
US9422184B2 (en) 2011-09-15 2016-08-23 Nippon Electric Glass Co., Ltd. Cutting method for glass sheet and glass sheet cutting apparatus
JP6063670B2 (ja) 2011-09-16 2017-01-18 株式会社アマダホールディングス レーザ切断加工方法及び装置
US10239160B2 (en) 2011-09-21 2019-03-26 Coherent, Inc. Systems and processes that singulate materials
JP2014534939A (ja) 2011-09-21 2014-12-25 レイディアンス，インコーポレイテッド 材料を切断するシステム及び工程
JP2013080904A (ja) 2011-09-22 2013-05-02 Hoya Corp 基板製造方法、配線基板の製造方法、ガラス基板および配線基板
FR2980859B1 (fr) 2011-09-30 2013-10-11 Commissariat Energie Atomique Procede et dispositif de lithographie
JP5864988B2 (ja) 2011-09-30 2016-02-17 浜松ホトニクス株式会社 強化ガラス板切断方法
US8894868B2 (en) * 2011-10-06 2014-11-25 Electro Scientific Industries, Inc. Substrate containing aperture and methods of forming the same
DE102011084128A1 (de) 2011-10-07 2013-04-11 Schott Ag Verfahren zum Schneiden eines Dünnglases mit spezieller Ausbildung der Kante
JP2013091578A (ja) 2011-10-25 2013-05-16 Mitsuboshi Diamond Industrial Co Ltd ガラス基板のスクライブ方法
TWI476888B (zh) 2011-10-31 2015-03-11 Unimicron Technology Corp 嵌埋穿孔中介層之封裝基板及其製法
WO2013065450A1 (ja) 2011-11-04 2013-05-10 株式会社フジクラ 微細孔を備えた基板の製造方法
KR101269474B1 (ko) 2011-11-09 2013-05-30 주식회사 모린스 강화글라스 절단 방법
US20130129947A1 (en) 2011-11-18 2013-05-23 Daniel Ralph Harvey Glass article having high damage resistance
US8677783B2 (en) 2011-11-28 2014-03-25 Corning Incorporated Method for low energy separation of a glass ribbon
WO2013084879A1 (ja) 2011-12-07 2013-06-13 旭硝子株式会社 強化ガラス板の切断方法、及び強化ガラス板切断装置
WO2013084877A1 (ja) 2011-12-07 2013-06-13 旭硝子株式会社 強化ガラス板の切断方法、および強化ガラス板切断装置
KR20130065051A (ko) 2011-12-09 2013-06-19 삼성코닝정밀소재 주식회사 강화 글라스의 절단 방법 및 이를 이용한 터치스크린패널의 제조방법
WO2013089124A1 (ja) 2011-12-12 2013-06-20 日本電気硝子株式会社 板ガラスの割断離反方法
JP5988163B2 (ja) 2011-12-12 2016-09-07 日本電気硝子株式会社 板ガラスの割断離反方法、及び板ガラスの割断離反装置
US8940620B2 (en) * 2011-12-15 2015-01-27 Power Integrations, Inc. Composite wafer for fabrication of semiconductor devices
KR20130074432A (ko) 2011-12-26 2013-07-04 삼성디스플레이 주식회사 휴대형 장치용 투명패널, 이의 제조방법 및 이를 이용한 휴대형 장치
CN102540474B (zh) 2012-01-11 2014-08-13 哈尔滨工业大学 一种实现边缘陡峭且光强波动低的平顶光束整形装置的整形控制方法
JP2013152986A (ja) 2012-01-24 2013-08-08 Disco Abrasive Syst Ltd ウエーハの加工方法
CN102585696A (zh) * 2012-02-13 2012-07-18 江苏大学 一种甲基苯基硅树脂基耐高温涂料及其制备方法
WO2013123025A1 (en) 2012-02-14 2013-08-22 Vytran, Llc Optical element cleaver and splicer apparatus and methods
JP2013178371A (ja) * 2012-02-28 2013-09-09 Hoya Corp 薄膜付き基板の薄膜の除去方法、転写用マスクの製造方法、基板の再生方法、及びマスクブランクの製造方法
US9895771B2 (en) 2012-02-28 2018-02-20 General Lasertronics Corporation Laser ablation for the environmentally beneficial removal of surface coatings
US20130221053A1 (en) 2012-02-28 2013-08-29 Electro Scientific Industries, Inc. Method and apparatus for separation of strengthened glass and articles produced thereby
JP2015511571A (ja) 2012-02-28 2015-04-20 エレクトロ サイエンティフィック インダストリーズ インコーポレーテッド 強化ガラスの分離のための方法及び装置並びにこれにより生成された製品
US9359251B2 (en) 2012-02-29 2016-06-07 Corning Incorporated Ion exchanged glasses via non-error function compressive stress profiles
TWI614227B (zh) 2012-02-29 2018-02-11 康寧公司 低ｃｔｅ之無鹼硼鋁矽酸鹽玻璃組成物及包含其之玻璃物件
US9227868B2 (en) 2012-02-29 2016-01-05 Electro Scientific Industries, Inc. Method and apparatus for machining strengthened glass and articles produced thereby
US9082764B2 (en) 2012-03-05 2015-07-14 Corning Incorporated Three-dimensional integrated circuit which incorporates a glass interposer and method for fabricating the same
JP2013187247A (ja) 2012-03-06 2013-09-19 Nippon Hoso Kyokai <Nhk> インターポーザおよびその製造方法
TW201343296A (zh) 2012-03-16 2013-11-01 Ipg Microsystems Llc 使一工件中具有延伸深度虛飾之雷射切割系統及方法
JP2013203630A (ja) 2012-03-29 2013-10-07 Asahi Glass Co Ltd 強化ガラス板の切断方法
TW201339111A (zh) 2012-03-29 2013-10-01 Global Display Co Ltd 強化玻璃的切割方法
JP2013203631A (ja) 2012-03-29 2013-10-07 Asahi Glass Co Ltd 強化ガラス板の切断方法、及び強化ガラス板切断装置
SE538058C2 (sv) 2012-03-30 2016-02-23 Silex Microsystems Ab Metod att tillhandahålla ett viahål och en routing-struktur
EP2834036B1 (en) 2012-04-05 2020-04-29 Sage Electrochromics, Inc. Method of thermal laser scribe cutting for electrochromic device production ; corresponding electrochromic panel
JP2013216513A (ja) 2012-04-05 2013-10-24 Nippon Electric Glass Co Ltd ガラスフィルムの切断方法及びガラスフィルム積層体
JP2015120604A (ja) 2012-04-06 2015-07-02 旭硝子株式会社 強化ガラス板の切断方法、及び強化ガラス板切断システム
FR2989294B1 (fr) 2012-04-13 2022-10-14 Centre Nat Rech Scient Dispositif et methode de nano-usinage par laser
JP5942558B2 (ja) 2012-04-13 2016-06-29 並木精密宝石株式会社 微小空洞形成方法
US20130288010A1 (en) 2012-04-27 2013-10-31 Ravindra Kumar Akarapu Strengthened glass article having shaped edge and method of making
KR20130124646A (ko) 2012-05-07 2013-11-15 주식회사 엠엠테크 강화 유리 절단 방법
US9365446B2 (en) 2012-05-14 2016-06-14 Richard Green Systems and methods for altering stress profiles of glass
DE102012010635B4 (de) 2012-05-18 2022-04-07 Leibniz-Institut für Oberflächenmodifizierung e.V. Verfahren zur 3D-Strukturierung und Formgebung von Oberflächen aus harten, spröden und optischen Materialien
CN102672355B (zh) 2012-05-18 2015-05-13 杭州士兰明芯科技有限公司 Led衬底的划片方法
JP6009225B2 (ja) 2012-05-29 2016-10-19 浜松ホトニクス株式会社 強化ガラス板の切断方法
US9938180B2 (en) 2012-06-05 2018-04-10 Corning Incorporated Methods of cutting glass using a laser
KR20130139106A (ko) 2012-06-12 2013-12-20 삼성디스플레이 주식회사 커버 글라스 가공 방법
JP6022223B2 (ja) 2012-06-14 2016-11-09 株式会社ディスコ レーザー加工装置
CN104428264A (zh) 2012-07-09 2015-03-18 旭硝子株式会社 强化玻璃板的切割方法
JP6038517B2 (ja) 2012-07-13 2016-12-07 新光電気工業株式会社 配線基板及びその製造方法
AT13206U1 (de) 2012-07-17 2013-08-15 Lisec Maschb Gmbh Verfahren und Anordnung zum Teilen von Flachglas
TW201417928A (zh) 2012-07-30 2014-05-16 Raydiance Inc 具訂製邊形及粗糙度之脆性材料切割
US9676046B2 (en) 2012-07-31 2017-06-13 Makino Milling Machine Co., Ltd. Electrical discharge machining method
KR101395054B1 (ko) 2012-08-08 2014-05-14 삼성코닝정밀소재 주식회사 강화유리 커팅 방법 및 강화유리 커팅용 스테이지
KR20140022981A (ko) 2012-08-14 2014-02-26 (주)하드램 기판 에지 보호유닛을 포함한 강화유리 레이저 절단 장치 및 방법
KR20140022980A (ko) 2012-08-14 2014-02-26 (주)하드램 강화유리 레이저 절단 장치 및 방법
WO2014028022A1 (en) 2012-08-16 2014-02-20 Hewlett-Packard Development Company, L.P. Diagonal openings in photodefinable glass
US20140047957A1 (en) 2012-08-17 2014-02-20 Jih Chun Wu Robust Torque-Indicating Wrench
TW201409777A (zh) 2012-08-22 2014-03-01 Syue-Min Li 發光二極體元件
JP5727433B2 (ja) 2012-09-04 2015-06-03 イムラ アメリカ インコーポレイテッド 超短パルスレーザでの透明材料処理
JP5835696B2 (ja) 2012-09-05 2015-12-24 株式会社東芝 半導体装置およびその製造方法
JP6176253B2 (ja) 2012-09-07 2017-08-09 旭硝子株式会社 インターポーザ用の中間品を製造する方法およびインターポーザ用の中間品
CN102923939B (zh) 2012-09-17 2015-03-25 江西沃格光电股份有限公司 强化玻璃的切割方法
CN102898014A (zh) 2012-09-29 2013-01-30 江苏太平洋石英股份有限公司 无接触激光切割石英玻璃制品的方法及其装置
CN102916081B (zh) 2012-10-19 2015-07-08 张立国 一种薄膜太阳能电池的清边方法
LT6046B (lt) 2012-10-22 2014-06-25 Uab "Lidaris" Justiruojamų optinių laikiklių pakeitimo įrenginys ir sistema, turinti tokių įrenginių
US20140110040A1 (en) 2012-10-23 2014-04-24 Ronald Steven Cok Imprinted micro-louver structure method
DE102012110971A1 (de) 2012-11-14 2014-05-15 Schott Ag Trennen von transparenten Werkstücken
KR20140064220A (ko) 2012-11-20 2014-05-28 에스케이씨 주식회사 보안필름의 제조방법
WO2014079478A1 (en) 2012-11-20 2014-05-30 Light In Light Srl High speed laser processing of transparent materials
WO2014085663A1 (en) 2012-11-29 2014-06-05 Corning Incorporated Methods of fabricating glass articles by laser damage and etching
EP2925482A1 (en) * 2012-11-29 2015-10-07 Corning Incorporated Sacrificial cover layers for laser drilling substrates and methods thereof
US20140154439A1 (en) 2012-11-30 2014-06-05 Corning Incorporated Methods for glass strengthening
US10014177B2 (en) 2012-12-13 2018-07-03 Corning Incorporated Methods for processing electronic devices
US10086584B2 (en) 2012-12-13 2018-10-02 Corning Incorporated Glass articles and methods for controlled bonding of glass sheets with carriers
TWI617437B (zh) 2012-12-13 2018-03-11 康寧公司 促進控制薄片與載體間接合之處理
US20150329415A1 (en) 2012-12-13 2015-11-19 Robert Alan Bellman Glass and methods of making glass articles
CN203021443U (zh) 2012-12-24 2013-06-26 深圳大宇精雕科技有限公司 玻璃板水射流切割机
CN103013374B (zh) 2012-12-28 2014-03-26 吉林大学 仿生防粘疏水疏油贴膜
WO2014104368A1 (ja) 2012-12-29 2014-07-03 Hoya株式会社 磁気ディスク用ガラス基板および磁気ディスク
EP2754524B1 (de) 2013-01-15 2015-11-25 Corning Laser Technologies GmbH Verfahren und Vorrichtung zum laserbasierten Bearbeiten von flächigen Substraten, d.h. Wafer oder Glaselement, unter Verwendung einer Laserstrahlbrennlinie
WO2014121261A1 (en) 2013-02-04 2014-08-07 Newport Corporation Method and apparatus for laser cutting transparent and semitransparent substrates
JP6801846B2 (ja) 2013-02-05 2020-12-16 マサチューセッツ インスティテュート オブ テクノロジー ３ｄホログラフィックイメージングフローサイトメトリ
US9688565B2 (en) 2013-02-07 2017-06-27 Nippon Sheet Glass Company, Limited Glass composition, glass composition for chemical strengthening, strengthened glass article, and cover glass for display
KR101785819B1 (ko) 2013-02-07 2017-10-16 니혼 이타가라스 가부시키가이샤 유리 조성물, 화학 강화용 유리 조성물, 강화 유리 물품, 및 디스플레이용 커버 유리
US9498920B2 (en) 2013-02-12 2016-11-22 Carbon3D, Inc. Method and apparatus for three-dimensional fabrication
JP5830044B2 (ja) * 2013-02-15 2015-12-09 信越化学工業株式会社 レジスト下層膜形成用組成物及びパターン形成方法
US9393760B2 (en) 2013-02-28 2016-07-19 Corning Incorporated Laminated glass articles with phase-separated claddings and methods for forming the same
US9784961B2 (en) 2013-03-08 2017-10-10 Church & Dwight Co., Inc. Sperm motility test device and method
CN103143841B (zh) 2013-03-08 2014-11-26 西北工业大学 一种利用皮秒激光加工孔的方法
KR102209964B1 (ko) 2013-03-13 2021-02-02 삼성디스플레이 주식회사 피코초 레이저 가공 장치
US9481598B2 (en) 2013-03-15 2016-11-01 Kinestral Technologies, Inc. Laser cutting strengthened glass
EP2781296B1 (de) 2013-03-21 2020-10-21 Corning Laser Technologies GmbH Vorrichtung und verfahren zum ausschneiden von konturen aus flächigen substraten mittels laser
WO2014148020A1 (ja) 2013-03-22 2014-09-25 日本板硝子株式会社 ガラス組成物、化学強化用ガラス組成物、強化ガラス物品、およびディスプレイ用のカバーガラス
KR101857336B1 (ko) 2013-04-04 2018-05-11 엘피케이에프 레이저 앤드 일렉트로닉스 악티엔게젤샤프트 기판을 분리시키기 위한 방법 및 장치
WO2014161534A2 (de) 2013-04-04 2014-10-09 Lpkf Laser & Electronics Ag Verfahren und vorrichtung zum einbringen von durchbrechungen in ein substrat sowie ein derart hergestelltes substrat
DE102013103370A1 (de) 2013-04-04 2014-10-09 Lpkf Laser & Electronics Ag Verfahren zum Einbringen von Durchbrechungen in ein Glassubstrat sowie ein derart hergestelltes Glassubstrat
CN103316990B (zh) 2013-05-28 2015-06-10 江苏大学 脉冲激光驱动飞片加载薄板的微冲裁自动化装置及其方法
CN103273195B (zh) 2013-05-28 2015-03-04 江苏大学 激光间接冲击下金属薄板的微冲裁自动化装置及其方法
CN105473522B (zh) 2013-06-21 2019-12-03 康宁股份有限公司 低温下的蚀刻速率提高
US9776891B2 (en) 2013-06-26 2017-10-03 Corning Incorporated Filter and methods for heavy metal remediation of water
KR101344368B1 (ko) 2013-07-08 2013-12-24 정우라이팅 주식회사 수직형 유리관 레이저 절단장치
CN103359948A (zh) 2013-07-12 2013-10-23 深圳南玻伟光导电膜有限公司 钢化玻璃的切割方法
US20150021513A1 (en) 2013-07-17 2015-01-22 Yun-jeong Kim Cmp slurry composition for polishing an organic layer and method of forming a semiconductor device using the same
KR20150014167A (ko) 2013-07-29 2015-02-06 삼성전기주식회사 유리 코어가 구비된 인쇄회로기판
US9102007B2 (en) 2013-08-02 2015-08-11 Rofin-Sinar Technologies Inc. Method and apparatus for performing laser filamentation within transparent materials
US9984270B2 (en) 2013-08-05 2018-05-29 Apple Inc. Fingerprint sensor in an electronic device
KR20220003632A (ko) 2013-08-15 2022-01-10 코닝 인코포레이티드 알칼리-도핑 및 알칼리가-없는 보로알루미노실리케이트 유리
WO2015029286A1 (ja) 2013-08-27 2015-03-05 パナソニック株式会社 薄膜トランジスタ基板の製造方法及び薄膜トランジスタ基板
US9296646B2 (en) 2013-08-29 2016-03-29 Corning Incorporated Methods for forming vias in glass substrates
JP6469657B2 (ja) 2013-09-26 2019-02-13 アトテツク・ドイチユラント・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツングＡｔｏｔｅｃｈ Ｄｅｕｔｓｃｈｌａｎｄ ＧｍｂＨ 基材表面を金属化するための新規の密着性促進体
CN105593410A (zh) 2013-09-26 2016-05-18 德国艾托特克公司 用于衬底表面金属化的新颖粘着促进方法
CN203509350U (zh) 2013-09-27 2014-04-02 东莞市盛雄激光设备有限公司 皮秒激光加工装置
US9589799B2 (en) * 2013-09-30 2017-03-07 Lam Research Corporation High selectivity and low stress carbon hardmask by pulsed low frequency RF power
US10510576B2 (en) 2013-10-14 2019-12-17 Corning Incorporated Carrier-bonding methods and articles for semiconductor and interposer processing
CN103531414B (zh) 2013-10-14 2016-03-02 南京三乐电子信息产业集团有限公司 一种栅控行波管栅网的皮秒脉冲激光切割制备方法
US10017410B2 (en) 2013-10-25 2018-07-10 Rofin-Sinar Technologies Llc Method of fabricating a glass magnetic hard drive disk platter using filamentation by burst ultrafast laser pulses
US10005152B2 (en) 2013-11-19 2018-06-26 Rofin-Sinar Technologies Llc Method and apparatus for spiral cutting a glass tube using filamentation by burst ultrafast laser pulses
US11053156B2 (en) 2013-11-19 2021-07-06 Rofin-Sinar Technologies Llc Method of closed form release for brittle materials using burst ultrafast laser pulses
DE102013223637B4 (de) 2013-11-20 2018-02-01 Trumpf Laser- Und Systemtechnik Gmbh Verfahren zum Behandeln eines lasertransparenten Substrats zum anschließenden Trennen des Substrats
JP6976057B2 (ja) 2013-11-20 2021-12-01 コーニング インコーポレイテッド 耐スクラッチアルミノホウケイ酸ガラス
US9835442B2 (en) 2013-11-25 2017-12-05 Corning Incorporated Methods for determining a shape of a substantially cylindrical specular reflective surface
US10144088B2 (en) 2013-12-03 2018-12-04 Rofin-Sinar Technologies Llc Method and apparatus for laser processing of silicon by filamentation of burst ultrafast laser pulses
CN103746027B (zh) 2013-12-11 2015-12-09 西安交通大学 一种在ito导电薄膜表面刻蚀极细电隔离槽的方法
US20150166393A1 (en) 2013-12-17 2015-06-18 Corning Incorporated Laser cutting of ion-exchangeable glass substrates
US9687936B2 (en) 2013-12-17 2017-06-27 Corning Incorporated Transparent material cutting with ultrafast laser and beam optics
US9676167B2 (en) 2013-12-17 2017-06-13 Corning Incorporated Laser processing of sapphire substrate and related applications
US9850160B2 (en) 2013-12-17 2017-12-26 Corning Incorporated Laser cutting of display glass compositions
US20150165560A1 (en) 2013-12-17 2015-06-18 Corning Incorporated Laser processing of slots and holes
WO2015095264A2 (en) 2013-12-17 2015-06-25 Corning Incorporated 3-d forming of glass
US9517963B2 (en) 2013-12-17 2016-12-13 Corning Incorporated Method for rapid laser drilling of holes in glass and products made therefrom
US9701563B2 (en) 2013-12-17 2017-07-11 Corning Incorporated Laser cut composite glass article and method of cutting
US9815730B2 (en) 2013-12-17 2017-11-14 Corning Incorporated Processing 3D shaped transparent brittle substrate
US10442719B2 (en) 2013-12-17 2019-10-15 Corning Incorporated Edge chamfering methods
US20150165563A1 (en) 2013-12-17 2015-06-18 Corning Incorporated Stacked transparent material cutting with ultrafast laser beam optics, disruptive layers and other layers
US9285593B1 (en) 2013-12-20 2016-03-15 AdlOptica Optical Systems GmbH Method and apparatus for shaping focused laser beams
US10060723B2 (en) 2014-01-17 2018-08-28 Harbin Institute Of Technology Method and equipment based on multi-core fiber Bragg grating probe for measuring structures of a micro part
WO2015112958A1 (en) 2014-01-27 2015-07-30 Corning Incorporated Articles and methods for controlled bonding of thin sheets with carriers
EP3099484A1 (en) 2014-01-27 2016-12-07 Corning Incorporated Treatment of a surface modification layer for controlled bonding of thin sheets with carriers
JP6273873B2 (ja) 2014-02-04 2018-02-07 大日本印刷株式会社 ガラスインターポーザー基板の製造方法
US9425125B2 (en) 2014-02-20 2016-08-23 Altera Corporation Silicon-glass hybrid interposer circuitry
WO2015124756A1 (en) 2014-02-24 2015-08-27 Renishaw Plc Method of inspecting an object with a vision probe
WO2015127583A1 (en) 2014-02-25 2015-09-03 Schott Ag Chemically toughened glass article with low coefficient of thermal expansion
US9618331B2 (en) 2014-03-20 2017-04-11 Harbin Institute Of Technology Method and equipment based on detecting the polarization property of a polarization maintaining fiber probe for measuring structures of a micro part
KR102269921B1 (ko) 2014-03-31 2021-06-28 삼성디스플레이 주식회사 유리 강화용 조성물 및 이를 이용한 터치 스크린 글래스의 제조 방법
SG11201608442TA (en) 2014-04-09 2016-11-29 Corning Inc Device modified substrate article and methods for making
CN106470953B (zh) 2014-04-30 2019-03-12 康宁股份有限公司 用于制造穿通玻璃通孔的接合材料的回蚀工艺
US8980727B1 (en) 2014-05-07 2015-03-17 Applied Materials, Inc. Substrate patterning using hybrid laser scribing and plasma etching processing schemes
US9472859B2 (en) 2014-05-20 2016-10-18 International Business Machines Corporation Integration of area efficient antennas for phased array or wafer scale array antenna applications
US10245322B2 (en) 2014-06-13 2019-04-02 The Regents Of The University Of California Nanostructured carriers for guided and targeted on-demand substance delivery
EP3166895B1 (en) 2014-07-08 2021-11-24 Corning Incorporated Methods and apparatuses for laser processing materials
EP2965853B2 (en) 2014-07-09 2020-03-25 High Q Laser GmbH Processing of material using elongated laser beams
KR20170028943A (ko) 2014-07-14 2017-03-14 코닝 인코포레이티드 조정가능한 레이저 빔 촛점 라인을 사용하여 투명한 재료를 처리하는 방법 및 시스템
US20160009066A1 (en) 2014-07-14 2016-01-14 Corning Incorporated System and method for cutting laminated structures
JP5972317B2 (ja) 2014-07-15 2016-08-17 株式会社マテリアル・コンセプト 電子部品およびその製造方法
US9558390B2 (en) 2014-07-25 2017-01-31 Qualcomm Incorporated High-resolution electric field sensor in cover glass
NL2015160A (en) 2014-07-28 2016-07-07 Asml Netherlands Bv Illumination system, inspection apparatus including such an illumination system, inspection method and manufacturing method.
US11610783B2 (en) 2014-07-30 2023-03-21 Corning Incorporated Ultrasonic tank and methods for uniform glass substrate etching
DE102014113339A1 (de) 2014-09-16 2016-03-17 Lpkf Laser & Electronics Ag Verfahren zur Erzeugung von Ausnehmungen in einem Material
CN104344202A (zh) 2014-09-26 2015-02-11 张玉芬 一种有孔玻璃
KR102391793B1 (ko) 2014-10-03 2022-04-28 니혼 이타가라스 가부시키가이샤 관통 전극이 달린 유리 기판의 제조 방법 및 유리 기판
US20160201474A1 (en) 2014-10-17 2016-07-14 United Technologies Corporation Gas turbine engine component with film cooling hole feature
US9919951B2 (en) 2014-10-31 2018-03-20 Corning Incorporated Dimensionally stable fast etching glasses
DE102014116958B9 (de) 2014-11-19 2017-10-05 Trumpf Laser- Und Systemtechnik Gmbh Optisches System zur Strahlformung eines Laserstrahls, Laserbearbeitungsanlage, Verfahren zur Materialbearbeitung und Verwenden einer gemeinsamen langgezogenen Fokuszone zur Lasermaterialbearbeitung
KR102138964B1 (ko) 2014-11-19 2020-07-28 트룸프 레이저-운트 시스템테크닉 게엠베하 비대칭 광학 빔 정형을 위한 시스템
US9548273B2 (en) 2014-12-04 2017-01-17 Invensas Corporation Integrated circuit assemblies with rigid layers used for protection against mechanical thinning and for other purposes, and methods of fabricating such assemblies
TWI506242B (zh) 2014-12-12 2015-11-01 Ind Tech Res Inst 薄膜曲率量測裝置及其方法
WO2016115017A1 (en) 2015-01-12 2016-07-21 Corning Incorporated Laser cutting of thermally tempered substrates using the multi photon absorption method
WO2016114934A1 (en) 2015-01-13 2016-07-21 Rofin-Sinar Technologies Inc. Method and system for scribing brittle material followed by chemical etching
US20160289669A1 (en) 2015-01-22 2016-10-06 Becton, Dickinson And Company Devices and systems for molecular barcoding of nucleic acid targets in single cells
WO2016118683A1 (en) 2015-01-23 2016-07-28 Corning Incorporated Coated substrate for use in sensors
US20160219704A1 (en) 2015-01-28 2016-07-28 Rf Micro Devices, Inc. Hermetically sealed through vias (tvs)
EP3262401B1 (en) 2015-02-27 2021-01-27 Brigham and Women's Hospital, Inc. Imaging systems and methods of using the same
US10082383B2 (en) 2015-03-05 2018-09-25 Harbin Institute Of Technology Method and equipment for dimensional measurement of a micro part based on fiber laser with multi-core FBG probe
EP3274306B1 (en) 2015-03-24 2021-04-14 Corning Incorporated Laser cutting and processing of display glass compositions
US10203476B2 (en) 2015-03-25 2019-02-12 Microsoft Technology Licensing, Llc Lens assembly
US20160312365A1 (en) 2015-04-24 2016-10-27 Kanto Gakuin School Corporation Electroless plating method and electroless plating film
WO2016176171A1 (en) 2015-04-28 2016-11-03 Corning Incorporated Method of laser drilling through holes in substrates using an exit sacrificial cover layer; corresponding workpiece
CN107531538A (zh) 2015-05-01 2018-01-02 康宁股份有限公司 用于控制玻璃片厚度的方法和设备
CN106298467B (zh) * 2015-05-28 2019-10-18 联华电子股份有限公司 半导体元件图案的制作方法
TW201704177A (zh) 2015-06-10 2017-02-01 康寧公司 蝕刻玻璃基板的方法及玻璃基板
US9442377B1 (en) * 2015-06-15 2016-09-13 Rohm And Haas Electronic Materials Llc Wet-strippable silicon-containing antireflectant
CN104897062B (zh) 2015-06-26 2017-10-27 北方工业大学 一种零件异面平行孔形位偏差的视觉测量方法及装置
US9741561B2 (en) 2015-07-10 2017-08-22 Uchicago Argonne, Llc Transparent nanocrystalline diamond coatings and devices
US11186060B2 (en) 2015-07-10 2021-11-30 Corning Incorporated Methods of continuous fabrication of holes in flexible substrate sheets and products relating to the same
KR102552275B1 (ko) * 2015-07-31 2023-07-07 삼성디스플레이 주식회사 마스크 제조방법
US9832868B1 (en) 2015-08-26 2017-11-28 Apple Inc. Electronic device display vias
JPWO2017038075A1 (ja) 2015-08-31 2018-06-14 日本板硝子株式会社 微細構造付きガラスの製造方法
US20170103249A1 (en) 2015-10-09 2017-04-13 Corning Incorporated Glass-based substrate with vias and process of forming the same
US9760986B2 (en) 2015-11-11 2017-09-12 General Electric Company Method and system for automated shaped cooling hole measurement
CN105693102B (zh) * 2016-01-12 2018-08-24 中国建筑材料科学研究总院 石英玻璃酸刻蚀用掩膜及石英玻璃摆片的酸刻蚀方法
TW201737766A (zh) 2016-01-21 2017-10-16 康寧公司 處理基板的方法
JP2017142245A (ja) 2016-02-05 2017-08-17 株式会社ミツトヨ 画像測定機及びプログラム
US10410883B2 (en) 2016-06-01 2019-09-10 Corning Incorporated Articles and methods of forming vias in substrates
US10249495B2 (en) * 2016-06-28 2019-04-02 Applied Materials, Inc. Diamond like carbon layer formed by an electron beam plasma process
US10134657B2 (en) 2016-06-29 2018-11-20 Corning Incorporated Inorganic wafer having through-holes attached to semiconductor wafer
EP3507057A1 (en) 2016-08-30 2019-07-10 Corning Incorporated Laser processing of transparent materials
US10366904B2 (en) 2016-09-08 2019-07-30 Corning Incorporated Articles having holes with morphology attributes and methods for fabricating the same
KR102078294B1 (ko) 2016-09-30 2020-02-17 코닝 인코포레이티드 비-축대칭 빔 스폿을 이용하여 투명 워크피스를 레이저 가공하기 위한 기기 및 방법
DE102018100299A1 (de) 2017-01-27 2018-08-02 Schott Ag Strukturiertes plattenförmiges Glaselement und Verfahren zu dessen Herstellung
WO2018162385A1 (de) 2017-03-06 2018-09-13 Lpkf Laser & Electronics Ag Verfahren zum einbringen zumindest einer ausnehmung in ein material mittels elektromagnetischer strahlung und anschliessendem ätzprozess
US11078112B2 (en) 2017-05-25 2021-08-03 Corning Incorporated Silica-containing substrates with vias having an axially variable sidewall taper and methods for forming the same
US10580725B2 (en) 2017-05-25 2020-03-03 Corning Incorporated Articles having vias with geometry attributes and methods for fabricating the same
WO2019044757A1 (ja) 2017-08-31 2019-03-07 日本電気硝子株式会社 ガラスのエッチング方法及びエッチング処理装置並びにガラス板
US20190185373A1 (en) 2017-12-19 2019-06-20 Corning Incorporated Methods for etching vias in glass-based articles employing positive charge organic molecules
CN108191258B (zh) * 2018-01-30 2020-05-05 武汉理工大学 一种dlc薄膜增硬玻璃及其制备方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111757856A (zh) * 2018-02-22 2020-10-09 康宁股份有限公司 具有低的hf蚀刻后粗糙度的不含碱性硼硅酸盐玻璃
US11554984B2 (en) 2018-02-22 2023-01-17 Corning Incorporated Alkali-free borosilicate glasses with low post-HF etch roughness
TWI794417B (zh) * 2018-02-22 2023-03-01 美商康寧公司 具有低hf蝕刻後粗糙度之無鹼硼矽酸鹽玻璃
CN111757856B (zh) * 2018-02-22 2023-08-22 康宁股份有限公司 具有低的hf蚀刻后粗糙度的不含碱性硼硅酸盐玻璃

Also Published As

Publication number Publication date
US20190348301A1 (en) 2019-11-14
KR20190013869A (ko) 2019-02-11
US20170352553A1 (en) 2017-12-07
WO2017210376A1 (en) 2017-12-07
US10410883B2 (en) 2019-09-10
US11114309B2 (en) 2021-09-07
JP2019519457A (ja) 2019-07-11
CN109314058A (zh) 2019-02-05
EP3465745A1 (en) 2019-04-10

Similar Documents

Publication Publication Date Title
TW201806082A (zh) 在基板中形成通孔的物件及方法
EP3099483B1 (en) Articles and methods for controlled bonding of thin sheets with carriers
TWI617437B (zh) 促進控制薄片與載體間接合之處理
JP2020037513A (ja) 高分子表面の担体との制御された結合のための物品および方法
JP2017511756A (ja) 薄いシートの担体との制御された結合のための表面改質層の処理
US20060051602A1 (en) Coating structure and method
JP2017500259A (ja) ガラスシートとキャリアとの制御された結合のためのガラス物品及び方法
EP2932496A1 (en) Glass and methods of making glass articles
TW201343403A (zh) 具有載體之可撓性玻璃的處理
JPH0138369B2 (zh)
TW201637870A (zh) 石墨烯及用於將cvd生長石墨烯轉移至疏水性基材之無聚 合物方法
KR101810242B1 (ko) 텍스처링된 단결정
CN111071986A (zh) 一种激光改性辅助制备碳化硅多级微结构的方法及一种加速度传感器
TWI700742B (zh) 用於塗敷石英表面的石英表面處理方法
JP2008001562A (ja) イットリウム系セラミックス被覆材およびその製造方法
TWI564957B (zh) Glass substrate etching method
JP2002285338A (ja) 厚い誘電体フィルムのデポジション法
Queste et al. DRIE of non-conventional materials: first results
KR102275790B1 (ko) 석영 부재의 표면 처리 방법 및 석영 부재
Shi et al. Deep wet etching process of Pyrex glass for vacuum packaging
CN108389780B (zh) 氮化硅薄膜及其制备方法
Jang Characterization of Plasma Enhanced Chemical Vapor Deposition of Amorphous Silicon Films from 100° C to 400° C
Bhatt et al. Microstructures using RF sputtered PSG film as a sacrificial layer in surface micromachining
TW201643123A (zh) 石英原材料的表面處理方法、表面處理用組合物及由此製成的石英原材料
KR20070032049A (ko) 기판상의 보호 코팅 및 그의 제조 방법