CN109314058A - 在衬底中形成通孔的制品和方法 - Google Patents

在衬底中形成通孔的制品和方法 Download PDF

Info

Publication number
CN109314058A
CN109314058A CN201780034352.0A CN201780034352A CN109314058A CN 109314058 A CN109314058 A CN 109314058A CN 201780034352 A CN201780034352 A CN 201780034352A CN 109314058 A CN109314058 A CN 109314058A
Authority
CN
China
Prior art keywords
substrate
mask
hole
method described
carrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201780034352.0A
Other languages
English (en)
Inventor
R·A·贝尔曼
S·刘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Corning Inc
Original Assignee
Corning Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Corning Inc filed Critical Corning Inc
Publication of CN109314058A publication Critical patent/CN109314058A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/486—Via connections through the substrate with or without pins
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/60—Deposition of organic layers from vapour phase
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B3/00—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form
    • B32B3/26—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B33/00—Layered products characterised by particular properties or particular surface features, e.g. particular surface coatings; Layered products designed for particular purposes not covered by another single class
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/28—Surface treatment of glass, not in the form of fibres or filaments, by coating with organic material
    • C03C17/30—Surface treatment of glass, not in the form of fibres or filaments, by coating with organic material with silicon-containing compounds
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
    • C03C23/0005—Other surface treatment of glass not in the form of fibres or filaments by irradiation
    • C03C23/0025—Other surface treatment of glass not in the form of fibres or filaments by irradiation by a laser beam
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49838—Geometry or layout
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D2203/00—Other substrates
    • B05D2203/30—Other inorganic substrates, e.g. ceramics, silicon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D2203/00—Other substrates
    • B05D2203/30—Other inorganic substrates, e.g. ceramics, silicon
    • B05D2203/35—Glass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/007—After-treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/06—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/10—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by other chemical means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/10—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by other chemical means
    • B05D3/107—Post-treatment of applied coatings
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/54—Glass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B3/00—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form
    • B32B3/26—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer
    • B32B3/266—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer characterised by an apertured layer, the apertures going through the whole thickness of the layer, e.g. expanded metal, perforated layer, slit layer regular cells B32B3/12
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2204/00—Glasses, glazes or enamels with special properties
    • C03C2204/08—Glass having a rough surface
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/30—Aspects of methods for coating glass not covered above
    • C03C2218/34—Masking
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
    • C03C23/0005—Other surface treatment of glass not in the form of fibres or filaments by irradiation
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24273—Structurally defined web or sheet [e.g., overall dimension, etc.] including aperture
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24273—Structurally defined web or sheet [e.g., overall dimension, etc.] including aperture
    • Y10T428/24322—Composite web or sheet
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31—Surface property or characteristic of web, sheet or block

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Geometry (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Surface Treatment Of Glass (AREA)
  • Weting (AREA)

Abstract

在具有从第一表面延伸的至少一个损伤区的衬底中形成通孔的方法，蚀刻该衬底的该至少一个损伤区以在衬底中形成通孔，其中该通孔延伸穿过衬底的厚度T，同时衬底的第一表面被掩蔽。在蚀刻之后从衬底的第一表面移除掩模，并且在移除掩模时，衬底的第一表面具有约小于1.0nm的表面粗糙度(Rq)。

Description

在衬底中形成通孔的制品和方法
相关申请的交叉引用
本申请根据35 U.S.C.§119要求于2016年6月1日提交的美国临时申请序列第62/343,943号的优先权，本申请基于该临时申请的内容并且该临时申请的内容通过引用整体结合于此。
背景
领域
本公开大体上涉及在衬底中形成通孔的制品和方法。特别地，本公开涉及包括保持衬底的表面粗糙度(Rq)的蚀刻过程的在衬底中形成贯通孔的制品和方法。
技术背景
中介层可以用作在包括具有射频(RF)滤波器的设备的电子设备中的电界面，以将电连接扩展到更宽的节距或者将电连接重新路由到不同的电连接。玻璃中介层已成为硅和纤维增强聚合物的有吸引力的替代品。这部分是由于玻璃在大薄片中形成的能力。然而，对于连续更薄的电子设备，许多应用要求中介层具有300μm或更小的厚度。由于玻璃的脆性和缺乏刚性，这种薄玻璃在制造程序中可能难以处理。为了抵消玻璃衬底的脆性和缺乏刚性，已经开发了使用与玻璃衬底结合的载体的制造方法。
范德华力可用于将玻璃制品临时地结合到载体。临时结合的能量足以在平板制造中维持，同时保持可去结合。然而，当玻璃制品的表面粗糙度(Rq)太高时，范德华力可能产生弱键，如果有的话。
典型地，玻璃中介层需要通孔(孔)填充有导电材料以提供电界面连接。在玻璃中介层中创建通孔的已知方法是通过创建穿过玻璃中介层的厚度的损伤区，然后将衬底浸入蚀刻剂。然后，蚀刻剂可以从损伤区移除材料以使孔扩大。然而，蚀刻过程不是选择性的，并且可以从玻璃中介层的两个面以及扩大孔移除材料。这总是创建在可以适当地形成范德华键的范围之外的玻璃中介层表面粗糙度(Rq)。
因此，需要在衬底中形成通孔同时保持低表面粗糙度(Rq)的方法，使得衬底可以可移除地结合到载体。
发明内容
在第一方面，一种在衬底中形成通孔的方法，所述衬底具有从第一表面延伸的至少一个损伤区，所述方法包括在所述衬底的第一表面被掩蔽时蚀刻所述衬底的所述至少一个损伤区以在所述衬底中形成通孔。然后，从衬底的第一表面移除掩模，并且在移除掩模时，衬底的第一表面具有约小于1.0nm的表面粗糙度(Rq)。
根据第一方面的第二方面，其中所述掩模选自由二苯基硅(diphenylsilicon)、苯基硅(phenylsilicon)、甲基苯基硅(methylphenylsilicon)和类金刚石碳(DLC)组成的组。
根据第二方面的第三方面，其中掩模是DLC，并且DLC是氢化非晶碳。
根据前述方面中任一方面的第四方面，其中，在移除所述掩模时，所述衬底的所述第一表面具有约小于0.6nm的表面粗糙度(Rq)。
根据前述方面中任一方面的第五方面，其中，在蚀刻期间，所述衬底的与所述衬底的所述第一表面相对的第二表面被掩蔽。
根据前述方面中任一方面的第六方面，其中，通过氧化移除所述掩模。
根据前述方面中任一方面的第七方面，其中，所述通孔是盲孔或贯通孔。
根据前述方面中任一方面的第八方面，其中，将所述掩模选择性地施加到所述衬底的所述第一表面，使得所述损伤区未被掩蔽。
根据前述方面中任一方面的第九方面，其中，所述衬底是玻璃、陶瓷或玻璃-陶瓷。
根据前述方面中任一方面的第十方面，进一步包括通过将所述衬底的所述第一表面设置在载体的结合表面上，将所述衬底可移除地结合到载体。
根据第十方面的第十一方面，进一步包括：在将所述衬底可移除地结合到所述载体之后，通过以下中的至少一个处理所述衬底：向所述衬底应用碱性清洁溶液、湿法蚀刻所述衬底、抛光所述衬底、对所述衬底进行金属电镀、通过湿法蚀刻对所述衬底进行金属图案化、将材料沉积到所述衬底上、以及对所述衬底进行退火。
根据第十一方面的第十二方面，进一步包括从衬底移除载体。
根据第十至第十二方面中的任一方面的第十三方面，其中，将所述掩模选择性地施加到所述衬底的所述第一表面，使得所述损伤区未被掩蔽。
在第十四方面中，一种制品包括衬底，该衬底包括由厚度T分开的第一表面和第二表面。至少一个损伤区在所述衬底内并从所述第一表面延伸。第一膜层被设置在衬底的第一表面的未损伤区上。第一膜层选自由二苯基硅、苯基硅、甲基苯基硅和类金刚石碳(DLC)组成的组。
根据第十四方面的第十五方面，进一步包括第二膜层，设置在所述衬底的所述第二表面的未损伤区上，所述第二膜层选自由二苯基硅、苯基硅、甲基苯基硅和类金刚石碳(DLC)组成的组。
根据第十四或十五方面的第十六方面，其中，第一膜是DLC，并且DLC是氢化非晶碳。
根据第十四至第十六方面中的任一方面的第十七方面，其中，所述衬底是玻璃、陶瓷或玻璃-陶瓷。
将在以下详细描述中阐述本发明的附加特征和优点，这些特征和优点在某种程度上对于本领域的技术人员来说根据该描述将是显而易见的，或者通过实施包括以下详细描述、权利要求书以及附图的本文所述的实施例可认识到。
应当理解的是，以上一般描述和以下详细描述两者描述了各实施例，并且它们旨在提供用于理解所要求保护的主题的本质和特性的概观或框架。包括了附图以提供对各个实施例的进一步的理解，并且附图被结合到本说明书中并构成说明书的一部分。附图示出本文所述的各个实施例，并与说明书一起用于说明所要求保护的主题的原理和操作。
附图说明
在附图中阐述的实施例在性质上为说明性和示例性的，并不意图限制权利要求所定义的主题。示例性实施例的以下详细描述可结合以下附图阅读时被最好地理解，在附图中相同的结构使用相同的附图标记来指示，其中：
图1图示了根据本文所示和所描述的一个或多个实施例的包括衬底和掩模的制品的透视图；
图2图示了根据本文所示和所描述的一个或多个实施例的描述制造制品的方法的流程图；
图3图示了根据本文所示和所描述的一个或多个实施例的具有在其中形成一个或多个损伤区的图1的制品的横截面视图；
图4图示了根据本文所示和所描述的一个或多个实施例的浸在蚀刻剂中的图1的制品；
图5图示了根据本文所示和所描述的一个或多个实施例的具有在其中形成一个或多个通孔的图1的制品的横截面视图；
图6图示了根据本文所示和所描述的一个或多个实施例的掩模被移除的图4的制品的横截面视图；
图7图示了根据本文所示和所描述的一个或多个实施例的结合到载体的图6的制品的透视图。
具体实施方式
通常地参照附图，在本文提供的衬底中创建通孔的制品和方法的实施例允许保持衬底的表面粗糙度(Rq)，使得衬底可以可移除地结合到载体以用于进一步处理。现将详细参考在衬底中形成通孔的制品和方法的各种实施例，这些实施例的示例在附图中说明。在可能时，将在所有附图中使用相同的附图标号来指示相同或类似的部件。应注意，图中所图示的实施例未按比例绘制，并且相对尺寸和宽度被选择用于仅说明的目的。
实施例通过在用于通孔形成的蚀刻过程期间利用掩模层来保持衬底的蚀刻前的表面粗糙度。通过在通孔形成期间保持衬底的低表面粗糙度，衬底可以可移除地结合到载体上以用于进一步处理。在处理之后，可以从载体移除衬底，使得载体可以重新用于处理另外的衬底。下面详细描述用于通孔形成的制品和方法的各种实施例。
图1描绘了示例制品100。本文公开的制品可以用作例如半导体封装中的中介层，该制品具有蚀刻孔(例如，通孔)和允许成功的下游处理的表面属性，该处理包括但不限于通孔金属化和用于半导体设备、射频(RF)设备(例如，天线、开关等)、中介层设备，微电子设备、光电设备、微电子机械系统(MEMS)设备和其他可以利用通孔的应用的再分布层(RDL)的应用。
图2描绘了大致上图示用于在衬底中形成通孔的示例过程的示例流程图10。在整个各种附图的描述中将更详细地描述流程图中描绘的步骤。注意到，尽管流程图10被描绘为具有特定的顺序，但是应该理解，本公开的实施例不限于图1中所示的步骤的顺序。
参见图1，制品100通常包括衬底110。衬底110具有第一表面112和第二表面114。在第一表面112上示出至少一个损伤区120。第一掩模150a和第二掩模150b形成在衬底110的第一表面112和第二表面114中的至少一个上。在一些实施例中，掩模可以仅形成在第一表面112或第二表面114中的一个上。在其他实施例中，并且如图1所示，第一掩模150a和第二掩模150b形成在衬底110的第一表面112和第二表面114两者上。衬底110可以由各种玻璃组合物形成，包括但不限于硼硅酸盐玻璃、铝硅酸盐玻璃、碱-铝硅酸盐玻璃、铝硼硅酸盐玻璃、碱-铝硼硅酸盐玻璃和钠钙玻璃。此外，衬底110可以被强化(例如，通过离子交换过程)或不被强化。示例衬底可包括但不限于Corning EAGLE玻璃，化学地强化或非强化的Corning玻璃和Corning玻璃。在又进一步的实施例中，衬底110可以由其他材料制成，诸如陶瓷和玻璃陶瓷。
现在参考图3，衬底110的第一表面112和第二表面114可以通过厚度T分开，厚度T可以取决于应用并且不受本公开的限制。作为非限制性示例，厚度T可以在约25μm至约3,000μm，约25μm至约2,000μm，约25μm至约1,000μm，约50μm至约3,000μm，约50μm至约2,000μm，约50μm至约1,000μm，约100μm至约3,000μm，约100μm至约2,000μm，约100μm至约1,000μm，约200μm至约3,000μm，约200μm至约2,000μm，约200μm至约1,000μm，约500μm至约3,000μm，约500μm至约2,000μm，约500μm至约1,000μm的范围内，约3,000μm或更小，约2,000μm或更小，约1,000μm或更小，约700μm或更小，约500μm或更小，约400μm或更小，约300μm或更小，约200μm或更小，或约100μm或更小。第一表面112和第二表面114还具有蚀刻前的表面粗糙度(Rq)。表面粗糙度(Rq)是指表面的测量的微观峰和谷的均方根(RMS)。表面粗糙度(Rq)可以使用原子力显微镜(AFM)来测量，例如Veeco Dimension Icon。表面粗糙度(Rq)可以响应于处理步骤而改变，诸如下面描述的蚀刻处理。这在下面提供的示例中可能更明显。
参考图2的框11，在衬底110中创建该至少一个损伤区120。如图3中所指示，该至少一个损伤区120延伸穿过衬底110的厚度T。该至少一个损伤区120可以是延伸穿过衬底110的厚度T的孔。在一些实施例中，该至少一个损伤区120不延伸穿过衬底的整个厚度。在一些实施例中，存在延伸穿过衬底的厚度T的损伤区与不延伸穿过衬底的整个厚度的损伤区的组合。可以以各种方式在衬底110中形成该至少一个损伤区120。在一些实施例中，可以通过应用高能激光脉冲烧蚀穿过衬底110的窄孔来创建该至少一个损伤区120。该至少一个损伤区120允许蚀刻剂在下游蚀刻过程期间在其中流动。
在另一个示例中，该至少一个损伤区120可以不是穿过衬底110的厚度T的孔，而是由脉冲激光形成的激光诱导损伤线。例如，脉冲激光可以通过非线性多光子吸收形成损伤线。在蚀刻过程期间，限定该至少一个损伤区120的激光诱导损伤线内的材料移除速率快于在该至少一个损伤区120外部的材料移除速率。用于执行激光损伤创建和随后的蚀刻的示例性方法公开在美国专利第9,278,886号和美国公开第2015/0166395号中，其各自通过引用整体并入本文。
在图2的流程图10的框12处，第一掩模150a和第二掩模150b可以分别地施加到衬底110的第一表面112和第二表面114。在一些实施例中，第一掩模150a和第二掩模150b不加区别地施加到衬底110。在这样的实施例中，第一掩模150a和第二掩模150b可以在在衬底110中创建该至少一个损伤区120之前被施加到衬底，如上所述。在这种情况下，激光脉冲可以烧蚀穿过第一掩模150a和第二掩模150b和衬底110的孔。在其他实施例中，在该至少一个损伤区已经被创建之后，第一掩模150a和第二掩模150b不加区别地施加到衬底。在这种情况下，可以在进一步处理之前从已经创建的至少一个损伤区120选择性地移除第一掩模150a和第二掩模150b。在又另外的实施例中，第一掩模150a和第二掩模150b选择性地施加到衬底110。在这样的实施例中，第一掩模150a和第二掩模150b可以被施加到衬底110，以便避免已经创建的至少一个损伤区120。这样，第一掩模150a和第二掩模150b可以具有与该至少一个损伤区120对准的开口，以便允许蚀刻剂进入该至少一个损伤区120。第一掩模150a和第二掩模150b可以以小于或等于1μm的厚度被施加。在一些实施例中，第一掩模150a和第二掩模150b可以以小于或等于300nm的厚度被施加。在又另外的实施例中，掩模150a和掩模150b可以以约60nm的厚度被施加。
第一掩模150a和第二掩模150b可以是各种材料。例如但不限制地，掩模可以由二苯基硅、苯基硅、甲基苯基硅和类金刚石碳(DLC)制成。在一些实施例中，类金刚石碳可以是氢化非晶碳。这种氢化非晶碳膜可以通过沉积诸如分子式CnHy的化合物之类的碳氢前体化合物来形成，其中n为1至6，y为2至14。在一些示例中，n为1至4，y为2至10。碳氢化合物可以是直链或支链的。在一些示例中，通过沉积碳氢前体化合物形成的涂层具有至少80重量％，至少85重量％，至少90重量％，或至少95重量％的组合的碳和氢含量。在一些示例中，沉积前体化合物以形成具有至少80重量％，至少85重量％，至少90重量％，至少95重量％，至少98重量％，至少99重量％，或大于99.5重量％的组合的碳和氢含量的涂层。
碳氢前体化合物的示例包括烷烃。烷烃可包括甲烷、乙烷、丙烷、丁烷、戊烷和己烷。在一些示例中，碳氢前体化合物包括至少一个碳-碳双键，例如烯烃。烯烃可包括乙烯、丙烯、丁烯、戊烯和己烷。烯烃中的碳-碳双键可以存在于化合物中的各种位置，例如丁-1-烯或丁-2-烯。在又其他示例中，碳氢前体化合物包括至少一个碳-碳三键，例如炔烃。炔烃可包括乙炔、丙炔、丁炔、戊炔和己炔。在一些示例中，炔烃中的碳-碳三键存在于化合物中的各个位置，例如1-丁炔或2-丁炔。
设想到第一掩模150a和第二掩模150b都可以是相同的材料。在其他实施例中，第一掩模150a和第二掩模150b可以是不同的材料。在掩模材料是二苯基硅的实施例中，可以将二苯基硅膜施加到衬底110的第一表面112和第二表面114中的至少一个上。其中二苯基硅膜被施加到第一表面112和第二表面114两者上，存在第一二苯基硅膜层和第二二苯基硅膜层。此外，尽管未示出，但是可以将二苯基硅膜施加到衬底110的边缘表面。例如，可以通过气相沉积来施加膜。作为示例而非限制，二苯基硅膜通过化学气相沉积(优选地为等离子体增强化学气相沉积)由二苯基硅烷和氢形成。二苯基硅是一种高效的掩模材料，且耐酸腐蚀。因此，二苯基硅可以经受与蚀刻过程中常用的氢氟酸-无机酸混合物的接触。此外，二苯基硅可以容易地从玻璃表面移除而不会产生过多的表面粗糙度(Rq)。
在实施例中，掩模材料是氢化非晶碳，氢化非晶碳膜可以施加到衬底110的第一表面112和第二表面114中的至少一个上。其中氢化非晶碳膜被施加到第一表面112和第二表面114两者上，存在第一氢化非晶碳膜层和第二氢化非晶碳膜层。氢化非晶碳可以通过化学气相沉积(CVD)技术和类似方法来沉积。CVD技术的具体示例包括CVD、低压CVD、常压CVD、等离子体增强CVD(PECVD)、常压等离子体CVD、原子层沉积(ALD)、等离子体ALD和化学束外延。在另一个示例中，涂层可以通过热解炬在高于600℃、高于800℃或高于1,000℃的温度(包括其间的任何范围和子范围)下沉积。用于形成包含碳氢化合物的涂层的气体混合物还可包括受控量的另一种化合物，例如载气或工作气体。另一种化合物可包括空气、氧气、一氧化二氮、二氧化碳、水蒸气或过氧化氢，和/或一种或多种惰性气体，例如氦气、氖气、氩气、氪气、氙气。
使用掩模的任何选择性蚀刻过程的最大挑战之一是掩模移除。掩模材料必须足够坚韧以抵抗蚀刻，但也必须易于移除而不损坏衬底。聚合物掩模(诸如光刻胶)通常涉及在机械搅拌下将掩蔽的衬底浸泡在热溶剂中。通常，通过等离子体蚀刻移除无机掩模。例如，通常用含氟等离子体移除PECVD沉积的碳化硅(SiC)。然而，在这种过程下，在移除期间也蚀刻衬底，因此增加了衬底的表面粗糙度(Rq)。二苯基硅对传统的掩模材料是独特的，因为它特别容易氧化。在氧化期间中，有机基团被热解并移除，硅被氧化以形成二氧化硅。该过程允许基本上保持衬底的表面粗糙度。如下面的示例3中所示，也可以氧化氢化非晶碳以移除掩模。设想到其他等离子体聚合物膜和材料可具有与二苯基硅基本上相似的益处。例如但不限于苯基硅、甲基苯基硅和类金刚石碳(DLC)。
参考图2的流程图10的框13，在已经创建该至少一个损伤区120并且已经施加第一掩模150a和第二掩模150b之后，可以蚀刻玻璃制品100。如图4所示，蚀刻过程可包括将玻璃制品100浸没在蚀刻剂180浴中。附加地或替代地，蚀刻剂180可以被喷射到玻璃制品100上。蚀刻剂180可以在衬底110的未掩蔽部分处移除衬底110的材料，以扩大该至少一个损伤区120的直径。可以利用任何合适的蚀刻剂。蚀刻剂的非限制性示例包括强无机酸，诸如硝酸、盐酸或磷酸，以及含氟蚀刻剂，诸如氢氟酸、氟化氢铵、氟化钠等。
图5图示了在蚀刻已经发生之后的衬底110。如所描绘，从图1中所图示的该至少一个损伤区120打开通孔124。通孔124被示出为贯通孔，其延伸穿过衬底的厚度。在其他实施例中，通孔可以是延伸通过衬底的仅一部分路径的盲孔。在一些实施例中，贯通孔从延伸穿过衬底的厚度的损伤区形成，并且盲孔从不延伸穿过衬底的厚度的损伤区形成。作为示例而非限制，通孔124可以具有在约5μm至约150μm，约20μm至约150μm，或约5μm至约20μm的范围内的直径。通孔可以是基本上圆柱形的，例如具有腰部(沿着通孔具有最小直径的点)，其直径为在第一表面或第二表面上的通孔的开口的直径的至少70％、至少75％或至少80％。
在已经将该至少一个通孔124打开至期望的直径之后，可以从衬底110移除第一掩模150a和第二掩模150b(图2的框14)。图6图示出了已从衬底110移除第一掩模150a和第二掩模150b。在一些实施例中，可在移除第一掩模150a和第二掩模150b之前和/或之后清洁衬底100(例如，通过用去离子水冲洗)。例如但不限制，在二苯基硅是掩模材料的实施例中，可以通过氧化移除第一掩模150a和第二掩模150b。用于氧化二苯基硅膜的示例工具包括氧光刻胶剥离器或等离子灰化器。可以移除掩模150a、150b而不显著增加衬底110的第一表面112和第二表面114的表面粗糙度(Rq)(即，蚀刻后的表面粗糙度(Rq))。显著增加表面粗糙度(Rq)是指将衬底110的表面粗糙度(Rq)增加到超过本文所述的范德华结合能力。在一些实例下，在移除掩模150a、150b之后所得到的衬底110的表面粗糙度(Rq)小于约1.2nm，小于约1.1nm，小于约1.0nm，小于约0.9nm，小于约0.8nm，小于约0.7nm，小于约0.6nm，小于约0.5nm，小于约0.4nm，或小于约0.3nm。
在已经蚀刻通孔124之后，可以对衬底110进行附加的处理步骤以获得附加的中介层性质。图7图示了通过将衬底110的第二表面114设置在载体200的结合表面210上可移除地结合到示例载体200的示例衬底110。如上所讨论，玻璃中介层可以非常薄(例如，从小于300μm至700μm的任何数值)。因为衬底110的脆性和缺乏刚性，这种薄材料在制造程序中可能难以处理。为了抵消脆性和缺乏刚性，在已经形成通孔并且已经移除第一掩模150a和第二掩模150b之后，衬底110可以可移除地结合到载体200。将衬底110可移除地结合到载体的一种示例性方法是通过使用范德华结合，诸如由美国专利公开第2014/0170378号所公开的，其全部内容通过引用并入本文。范德华结合通常包括将制品的表面设置在载体的结合表面上并且升高制品的温度，然后将制品冷却至室温。结果是制品和载体可移除地结合在一起。范德华结合有利于下游处理，因为它能够形成能够经受处理(例如，高温处理)的结合，同时允许衬底的整个区域从载体200被移除(一次全部地或部分地移除)。在已经移除衬底110之后，可以重新使用载体200来处理附加的衬底。
然而，使用范德华表面结合技术用于结合衬底的挑战在于结合在一起的表面的粗糙度影响表面被结合的能力。作为非限制性示例，大于约1.0nm的表面粗糙度(Rq)可基本上防止自发结合或导致衬底110与载体200的弱结合。弱结合可允许来自一个或多个过程的液体渗透到衬底110和载体200之间，从而导致分层或处理污染，因为来自一个过程的残留物可能影响后续的过程。
例如，载体200可以具有任何合适的材料，诸如玻璃。载体200不必是玻璃，而替代地可以是例如陶瓷、玻璃陶瓷或金属。如果由玻璃制成，载体200可以具有任何合适的组合物，包括但不限于硅铝酸盐、硼硅酸盐、铝硼硅酸盐、钠钙硅酸盐，并且根据其最终应用可以是含碱的或不含碱的。载体200可具有任何合适的厚度。另外，载体200可以由一层(如图所示)或结合在一起(例如，通过层压)的多层(包括多个薄片)制成。此外，载体200的热膨胀系数可以与衬底110的热膨胀系数基本上匹配，以防止在升高的温度下的处理期间衬底110翘曲或衬底110与载体200分离。衬底110的表面粗糙度(Rq)与载体200的表面粗糙度相加。因此，通常建议载体200具有小于或等于0.6nm的表面粗糙度(Rq)。
参见图2的框16，一旦衬底110充分地结合到载体200使得载体200和衬底110在处理期间将不分离，衬底110就可以经受进一步处理。处理衬底110可以包括步骤，诸如将碱性清洁溶液应用到衬底110，湿法蚀刻衬底110，抛光衬底110，对衬底110进行金属电镀，通过湿法蚀刻对衬底110进行金属图案化，通过沉积将材料沉积到衬底110上和对衬底110进行退火。
示例
以下比较示例和示例1与示例2比较了作为酸蚀刻和二苯基硅膜的移除的结果的表面粗糙度(Rq)的变化。在每个示例中，玻璃样本的厚度为0.7mm并且没有损伤区。通过具有以下参数的Veeco Dimension ICON AFM测量每个样本的表面粗糙度(Rq)：1Hz、512次扫描/线和2微米图像尺寸。
比较示例
在该对比示例中，周期性地测量未掩蔽的Eagle玻璃样本的表面粗糙度(Rq)，同时用6M氢氟酸和1.6M硝酸混合物蚀刻玻璃样本。已确定，在室温下在小于10分钟内通过机械(非超声)搅拌实现大于1nm的表面粗糙度(Rq)。该时间量对应于40μm的蚀刻深度。结果列于下表1中。注意到，在一些实例下，超过1.0nm的表面粗糙度(Rq)可能导致弱的或无效的范德华结合。
表1
时间 5分钟 10分钟 15分钟
表面粗糙度(Rq) 1.11nm 1.67nm 1.46nm
示例1
在该示例中，Eagle玻璃样本的表面粗糙度(Rq)在施加之前、施加之后和移除二苯基硅膜之后被测量。二苯基硅膜在应用材料P5000通用化学气相沉积(CVD)系统中沉积，该系统具有以下参数：390℃，体积流速为500sccm的二苯基硅烷，体积流速为600sccm的氢气(H2)，9托，210密耳间隙(mils.gap)，300W RF，在80℃下的二苯基硅烷起泡器。二苯基硅膜具有60nm的厚度。通过具有以下参数的Gasonics L3510光刻胶剥离器移除二苯基硅膜：200℃，1200mT，1000sccm的N2，100sccm的O2，900W，2.54GHz，具有30秒过蚀刻的终点控制。列于下表2中的结果说明表面粗糙度(Rq)仅略微增加，同时仍然很好地在如上所描述的范德华结合所需的范围内。注意到，在该示例中玻璃衬底未经历酸蚀刻。
表2
状态 施加前 施加后 移除后
表面粗糙度(Rq) 0.193nm 0.298nm 0.272nm
示例2
在该示例中，Eagle玻璃样本的表面粗糙度(Rq)在施加二苯基硅膜之后、在蚀刻15分钟之后和移除二苯基硅膜之后被测量。如在示例1中，二苯基硅膜在应用材料P5000通用CVD系统中沉积，该系统具有以下参数：390℃，体积流速为500sccm的二苯基硅烷，体积流速为600sccm的氢气(H2)，9托，210密耳间隙，300W RF，在80℃下的二苯基硅烷起泡器。二苯基硅膜具有60nm的厚度。蚀刻剂是3M氢氟酸和1M硝酸的混合物，并结合机械(非超声)搅拌。如在以上示例中，通过具有以下参数的Gasonics L3510光刻胶剥离器移除二苯基硅膜：200℃，1200mT，1000sccm的N2，100sccm的O2，900W，2.54GHz，具有30秒过蚀刻的终点控制。列于下表3中的结果说明表面粗糙度(Rq)很好地在如上所描述的范德华结合所需的范围内。该示例还说明了二苯基硅对酸腐蚀的抗性，如本文所讨论的。
表3
状态 施加后 15分钟蚀刻后 移除后
表面粗糙度(Rq) 0.269nm 0.259nm 0.201nm
示例3
在该示例中，6个具有0.7mm的厚度、150mm的直径且没有损伤区的Eagle玻璃晶片样本具有所施加的非晶氢化碳膜掩模。在30sccm的乙烯，70sccm的氢气，60mT压强，800W功率和13.56MHz频率的条件下的Nextral NE500反应离子蚀刻器中由乙烯和氢气沉积掩模。掩模的沉积时间和厚度(刚沉积的)列于下表4中。还在632nm下测量(刚沉积的)掩模的折射率。使用N&K分析仪测量厚度和折射率。在沉积掩模后，在23℃下在10wt％氢氟酸和7wt％硝酸的蚀刻溶液中蚀刻样本约15分钟。在蚀刻之后使用N&K分析仪再次测量掩模的厚度和在632nm下的折射率，并列于下表4中。厚度和折射率的变化在实验误差的范围内。接着，通过具有以下参数的Gasonics L3510光刻胶剥离器移除掩模：200℃，1200mT，1000sccm的N2，100sccm的O2，900W，2.54GHz，具有30秒过蚀刻的终点控制。并且通过具有以下参数的Veeco Dimension ICON AFM测量每个样本的表面粗糙度(Rq)：1Hz、512次扫描/线和2微米图像尺寸。下表4中列出了结果。
从表4中可以看出，样本7没有掩模并且在与具有掩模的六个样本的相同的条件下被蚀刻。与0.240至0.278相比，未掩蔽的样本7的表面粗糙度(Rq)为显著更高的1.13。这表明了掩模
表4
可以使用具有类似参数的应用材料P5000通用CVD系统将本文提供的其他材料沉积在衬底上。例如，在具有以下条件的应用材料P5000通用CVD系统中，苯基硅膜可以从有机硅氢化物前体与氢载气一起从苯基硅烷和氢气中沉积：390℃，体积流速为120sccm的苯基硅烷，和体积流速为600sccm的氢气(H2)，9托压强，210密耳间隙，和300W 13.56MHz RF。苯基硅烷安瓿可以在30℃。沉积速率可以接近1000nm/min。甲基苯基硅膜可以使用具有以下处理条件的应用材料P5000通用CVD系统沉积：390℃，体积流速为200sccm的甲基苯基硅烷，体积流速为600sccm的氢气(H2)，9托，210密耳间隙和450W RF。甲基苯基硅烷安瓿可以在80℃。诸如有机硅卤化物之类的其他前体也会产生类似的结果。
应该理解的是，本文描述的实施例提供了在衬底中形成通孔而不显著增加衬底的表面粗糙度(Rq)。通过在通孔形成期间保持衬底的低表面粗糙度，衬底可以可移除地结合到载体上以用于进一步处理。在处理之后，可以从载体移除衬底，使得载体可以重新用于处理另外的衬底。此外，贯通孔可以制成基本上圆柱形，因为它们可以从两端蚀刻。
对本领域的技术人员显而易见的是，可对本文描述的实施例作出各种修改和变化而不背离要求保护的主题的精神和范围。由此，旨在使说明书覆盖本文描述的各实施例的多种修正和变化，只要这些修正和变化落在所附权利要求书及其等效方案的范围内。

Claims (17)

1.一种在衬底中形成通孔的方法，所述衬底具有从第一表面延伸的至少一个损伤区，所述方法包括：
在所述衬底的所述第一表面被掩蔽时，蚀刻所述衬底的所述至少一个损伤区以在所述衬底中形成通孔；以及
从所述衬底的所述第一表面移除掩模，其中当移除所述掩模时，所述衬底的所述第一表面具有约小于1.0nm的表面粗糙度(Rq)。
2.根据权利要求1所述的方法，其中所述掩模选自由二苯基硅、苯基硅、甲基苯基硅和类金刚石碳(DLC)组成的组。
3.根据权利要求2所述的方法，其中所述掩模是DLC，并且所述DLC是氢化非晶碳。
4.根据任何前述权利要求所述的方法，其中，在移除所述掩模时，所述衬底的所述第一表面具有约小于0.6nm的表面粗糙度(Rq)。
5.根据任何前述权利要求所述的方法，其中在蚀刻期间，所述衬底的与所述衬底的所述第一表面相对的第二表面被掩蔽。
6.根据任何前述权利要求所述的方法，其中通过氧化移除所述掩模。
7.根据任何前述权利要求所述的方法，其中所述通孔是盲孔或贯通孔。
8.根据任何前述权利要求所述的方法，其中，将所述掩模选择性地施加到所述衬底的所述第一表面，使得所述损伤区未被掩蔽。
9.根据任何前述权利要求所述的方法，其中，所述衬底是玻璃、陶瓷或玻璃-陶瓷。
10.根据任何前述权利要求所述的方法，进一步包括：
通过将所述衬底的所述第一表面设置在载体的结合表面上，将所述衬底可移除地结合到所述载体。
11.根据权利要求10所述的方法，还包括：在将所述衬底可移除地结合到所述载体之后，通过以下中的至少一个处理所述衬底：向所述衬底应用碱性清洁溶液、湿法蚀刻所述衬底、抛光所述衬底、对所述衬底进行金属电镀、通过湿法蚀刻对所述衬底进行金属图案化、将材料沉积到所述衬底上、以及对所述衬底进行退火。
12.根据权利要求11所述的方法，还包括从所述衬底移除所述载体。
13.根据权利要求10-12中任一项所述的方法，其中，使用范德华力将所述衬底可移除地结合到所述载体。
14.一种制品，包括：
衬底，包括由厚度T分开的第一表面和第二表面；
至少一个损伤区，位于所述衬底内并从所述第一表面延伸；以及
第一膜层，设置在所述衬底的所述第一表面的未损伤区上，所述第一膜层选自由二苯基硅、苯基硅、甲基苯基硅和类金刚石碳(DLC)组成的组。
15.根据权利要求14所述的制品，还包括第二膜层，设置在所述衬底的所述第二表面的未损伤区上，所述第二膜层选自由二苯基硅、苯基硅、甲基苯基硅和类金刚石碳(DLC)组成的组。
16.根据权利要求14或15所述的制品，其中所述第一膜是DLC，并且所述DLC是氢化非晶碳。
17.根据权利要求14-16中任一项所述的制品，其中，所述衬底是玻璃、陶瓷或玻璃陶瓷。
CN201780034352.0A 2016-06-01 2017-06-01 在衬底中形成通孔的制品和方法 Pending CN109314058A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201662343943P 2016-06-01 2016-06-01
US62/343,943 2016-06-01
PCT/US2017/035346 WO2017210376A1 (en) 2016-06-01 2017-06-01 Articles and methods of forming vias in substrates

Publications (1)

Publication Number Publication Date
CN109314058A true CN109314058A (zh) 2019-02-05

Family

ID=59055309

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201780034352.0A Pending CN109314058A (zh) 2016-06-01 2017-06-01 在衬底中形成通孔的制品和方法

Country Status (7)

Country Link
US (2) US10410883B2 (zh)
EP (1) EP3465745A1 (zh)
JP (1) JP2019519457A (zh)
KR (1) KR20190013869A (zh)
CN (1) CN109314058A (zh)
TW (1) TW201806082A (zh)
WO (1) WO2017210376A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112763486A (zh) * 2020-11-30 2021-05-07 成都飞机工业（集团）有限责任公司 一种基于线激光扫描的复材壁板阵列孔检测方法

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10410883B2 (en) 2016-06-01 2019-09-10 Corning Incorporated Articles and methods of forming vias in substrates
US10794679B2 (en) 2016-06-29 2020-10-06 Corning Incorporated Method and system for measuring geometric parameters of through holes
US10580725B2 (en) 2017-05-25 2020-03-03 Corning Incorporated Articles having vias with geometry attributes and methods for fabricating the same
US11078112B2 (en) 2017-05-25 2021-08-03 Corning Incorporated Silica-containing substrates with vias having an axially variable sidewall taper and methods for forming the same
WO2019136051A1 (en) * 2018-01-04 2019-07-11 Corning Incorporated Methods of processing a substrate
US11554984B2 (en) * 2018-02-22 2023-01-17 Corning Incorporated Alkali-free borosilicate glasses with low post-HF etch roughness
US11152294B2 (en) 2018-04-09 2021-10-19 Corning Incorporated Hermetic metallized via with improved reliability
WO2020112710A1 (en) * 2018-11-27 2020-06-04 Corning Incorporated 3d interposer with through glass vias - method of increasing adhesion between copper and glass surfaces and articles therefrom
KR20210127188A (ko) 2019-02-21 2021-10-21 코닝 인코포레이티드 구리-금속화된 쓰루 홀을 갖는 유리 또는 유리 세라믹 물품 및 이를 제조하기 위한 공정
US11148935B2 (en) 2019-02-22 2021-10-19 Menlo Microsystems, Inc. Full symmetric multi-throw switch using conformal pinched through via
DE102019217466A1 (de) * 2019-11-12 2021-05-12 Lpkf Laser & Electronics Ag Reaktionsgefäße aus Glas, Herstellungsverfahren und Verfahren zur Analyse

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050266320A1 (en) * 2004-05-28 2005-12-01 Hoya Corporation Mask blank and mask for electron beam exposure
US20130089701A1 (en) * 2011-10-06 2013-04-11 Electro Scientific Industries, Inc. Substrate containing aperture and methods of forming the same
CN103165625A (zh) * 2011-12-15 2013-06-19 电力集成公司 用于制造半导体器件的复合晶圆

Family Cites Families (777)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1790397A (en) 1931-01-27 Glass workins machine
US208387A (en) 1878-09-24 Improvement in stocking-supporters
US108387A (en) 1870-10-18 Improvement in machines for making rope
US237571A (en) 1881-02-08 messier
US2682134A (en) 1951-08-17 1954-06-29 Corning Glass Works Glass sheet containing translucent linear strips
US2749794A (en) 1953-04-24 1956-06-12 Corning Glass Works Illuminating glassware and method of making it
GB1242172A (en) 1968-02-23 1971-08-11 Ford Motor Co A process for chemically cutting glass
US3647410A (en) 1969-09-09 1972-03-07 Owens Illinois Inc Glass ribbon machine blow head mechanism
US3729302A (en) 1970-01-02 1973-04-24 Owens Illinois Inc Removal of glass article from ribbon forming machine by vibrating force
US3775084A (en) 1970-01-02 1973-11-27 Owens Illinois Inc Pressurizer apparatus for glass ribbon machine
US3695498A (en) 1970-08-26 1972-10-03 Ppg Industries Inc Non-contact thermal cutting
US3695497A (en) 1970-08-26 1972-10-03 Ppg Industries Inc Method of severing glass
US3713921A (en) 1971-04-01 1973-01-30 Gen Electric Geometry control of etched nuclear particle tracks
JPS5417765B1 (zh) 1971-04-26 1979-07-03
DE2231330A1 (de) 1972-06-27 1974-01-10 Agfa Gevaert Ag Verfahren und vorrichtung zur erzeugung eines scharfen fokus
DE2757890C2 (de) 1977-12-24 1981-10-15 Fa. Karl Lutz, 6980 Wertheim Verfahren und Vorrichtung zum Herstellen von Behältnissen aus Röhrenglas, insbesondere Ampullen
JPS55130839A (en) 1979-03-29 1980-10-11 Asahi Glass Co Ltd Uniform etching method of article
US4395271A (en) 1979-04-13 1983-07-26 Corning Glass Works Method for making porous magnetic glass and crystal-containing structures
JPS56129261A (en) * 1980-03-17 1981-10-09 Hitachi Ltd Thin film-forming coating liquid composition
JPS56160893A (en) 1980-05-16 1981-12-10 Matsushita Electric Ind Co Ltd Absorbing film for laser work
US4441008A (en) 1981-09-14 1984-04-03 Ford Motor Company Method of drilling ultrafine channels through glass
US4507384A (en) * 1983-04-18 1985-03-26 Nippon Telegraph & Telephone Public Corporation Pattern forming material and method for forming pattern therewith
US4546231A (en) 1983-11-14 1985-10-08 Group Ii Manufacturing Ltd. Creation of a parting zone in a crystal structure
US4547836A (en) 1984-02-01 1985-10-15 General Electric Company Insulating glass body with electrical feedthroughs and method of preparation
JPS60220340A (ja) * 1984-04-17 1985-11-05 Nippon Telegr & Teleph Corp <Ntt> 感光性樹脂組成物及びパタ−ン形成方法
US4646308A (en) 1985-09-30 1987-02-24 Spectra-Physics, Inc. Synchronously pumped dye laser using ultrashort pump pulses
AT384802B (de) 1986-05-28 1988-01-11 Avl Verbrennungskraft Messtech Verfahren zur herstellung von traegermaterialien fuer optische sensoren
US4749400A (en) 1986-12-12 1988-06-07 Ppg Industries, Inc. Discrete glass sheet cutting
DE3789858T2 (de) 1986-12-18 1994-09-01 Sumitomo Chemical Co Platten für Lichtkontrolle.
JP2691543B2 (ja) 1986-12-18 1997-12-17 住友化学工業株式会社 光制御板およびその製造方法
JPS63203775A (ja) 1987-02-19 1988-08-23 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン 基板のメツキ処理方法
DE3882039T2 (de) 1987-10-01 1994-02-03 Asahi Glass Co Ltd Alkalifreies glas.
US4918751A (en) 1987-10-05 1990-04-17 The University Of Rochester Method for optical pulse transmission through optical fibers which increases the pulse power handling capacity of the fibers
IL84255A (en) 1987-10-23 1993-02-21 Galram Technology Ind Ltd Process for removal of post- baked photoresist layer
JPH01179770A (ja) 1988-01-12 1989-07-17 Hiroshima Denki Gakuen 金属とセラミックスとの接合方法
US4764930A (en) 1988-01-27 1988-08-16 Intelligent Surgical Lasers Multiwavelength laser source
US4907586A (en) 1988-03-31 1990-03-13 Intelligent Surgical Lasers Method for reshaping the eye
JPH0258221A (ja) * 1988-08-23 1990-02-27 Semiconductor Energy Lab Co Ltd 炭素または炭素を主成分とするマスクを用いたエッチング方法
US5089062A (en) 1988-10-14 1992-02-18 Abb Power T&D Company, Inc. Drilling of steel sheet
US4929065A (en) 1988-11-03 1990-05-29 Isotec Partners, Ltd. Glass plate fusion for macro-gradient refractive index materials
US4891054A (en) 1988-12-30 1990-01-02 Ppg Industries, Inc. Method for cutting hot glass
US5166493A (en) 1989-01-10 1992-11-24 Canon Kabushiki Kaisha Apparatus and method of boring using laser
US4948941A (en) 1989-02-27 1990-08-14 Motorola, Inc. Method of laser drilling a substrate
US5112722A (en) 1989-04-12 1992-05-12 Nippon Sheet Glass Co., Ltd. Method of producing light control plate which induces scattering of light at different angles
US5208068A (en) 1989-04-17 1993-05-04 International Business Machines Corporation Lamination method for coating the sidewall or filling a cavity in a substrate
DE69023382T2 (de) 1989-04-17 1996-06-20 Ibm Laminierungsverfahren zum Überdecken der Seitenwände einer Höhlung in einem Substrat sowie zur Füllung dieser Höhlung.
US5104210A (en) 1989-04-24 1992-04-14 Monsanto Company Light control films and method of making
US5035918A (en) 1989-04-26 1991-07-30 Amp Incorporated Non-flammable and strippable plating resist and method of using same
JPH0676269B2 (ja) 1990-02-28 1994-09-28 太陽誘電株式会社 セラミック基板のレーザースクライブ方法
US5040182A (en) 1990-04-24 1991-08-13 Coherent, Inc. Mode-locked laser
JPH04349132A (ja) 1990-12-28 1992-12-03 Seikosha Co Ltd 感光性ガラスの加工方法
ATE218904T1 (de) 1991-11-06 2002-06-15 Shui T Lai Vorrichtung für hornhautchirurgie
US5314522A (en) 1991-11-19 1994-05-24 Seikosha Co., Ltd. Method of processing photosensitive glass with a pulsed laser to form grooves
US5374291A (en) 1991-12-10 1994-12-20 Director-General Of Agency Of Industrial Science And Technology Method of processing photosensitive glass
GB9218482D0 (en) 1992-09-01 1992-10-14 Dixon Arthur E Apparatus and method for scanning laser imaging of macroscopic samples
US5265107A (en) 1992-02-05 1993-11-23 Bell Communications Research, Inc. Broadband absorber having multiple quantum wells of different thicknesses
JPH05323110A (ja) 1992-05-22 1993-12-07 Hitachi Koki Co Ltd 多ビーム発生素子
JPH0679486A (ja) 1992-08-25 1994-03-22 Rohm Co Ltd インクジェットヘッドの加工方法
US6016223A (en) 1992-08-31 2000-01-18 Canon Kabushiki Kaisha Double bessel beam producing method and apparatus
WO1994014567A1 (en) 1992-12-18 1994-07-07 Firebird Traders Ltd. Process and apparatus for etching an image within a solid article
DE4305764A1 (de) 1993-02-25 1994-09-01 Krupp Foerdertechnik Gmbh Verlegbare Brücke und Einrichtung zum Verlegen der Brücke
JPH06318756A (ja) 1993-05-06 1994-11-15 Toshiba Corp レ−ザ装置
WO1994029069A1 (fr) 1993-06-04 1994-12-22 Seiko Epson Corporation Appareil et procede d'usinage au laser, et panneau a cristaux liquides
CN1096936A (zh) 1993-07-01 1995-01-04 山东矿业学院济南分院 一种劳保饮料及其制造方法
JPH07136162A (ja) 1993-11-17 1995-05-30 Fujitsu Ltd 超音波カプラ
US6489589B1 (en) 1994-02-07 2002-12-03 Board Of Regents, University Of Nebraska-Lincoln Femtosecond laser utilization methods and apparatus and method for producing nanoparticles
US5436925A (en) 1994-03-01 1995-07-25 Hewlett-Packard Company Colliding pulse mode-locked fiber ring laser using a semiconductor saturable absorber
US5400350A (en) 1994-03-31 1995-03-21 Imra America, Inc. Method and apparatus for generating high energy ultrashort pulses
US5778016A (en) 1994-04-01 1998-07-07 Imra America, Inc. Scanning temporal ultrafast delay methods and apparatuses therefor
JP2526806B2 (ja) 1994-04-26 1996-08-21 日本電気株式会社 半導体レ―ザおよびその動作方法
WO1995031023A1 (en) 1994-05-09 1995-11-16 Massachusetts Institute Of Technology Dispersion-compensated laser using prismatic end elements
US5493096A (en) 1994-05-10 1996-02-20 Grumman Aerospace Corporation Thin substrate micro-via interconnect
JP3385442B2 (ja) 1994-05-31 2003-03-10 株式会社ニュークリエイション 検査用光学系および検査装置
US5434875A (en) 1994-08-24 1995-07-18 Tamar Technology Co. Low cost, high average power, high brightness solid state laser
US6016324A (en) 1994-08-24 2000-01-18 Jmar Research, Inc. Short pulse laser system
US5776220A (en) 1994-09-19 1998-07-07 Corning Incorporated Method and apparatus for breaking brittle materials
US5696782A (en) 1995-05-19 1997-12-09 Imra America, Inc. High power fiber chirped pulse amplification systems based on cladding pumped rare-earth doped fibers
US6120131A (en) 1995-08-28 2000-09-19 Lexmark International, Inc. Method of forming an inkjet printhead nozzle structure
JPH09106243A (ja) 1995-10-12 1997-04-22 Dainippon Printing Co Ltd ホログラムの複製方法
US5919607A (en) 1995-10-26 1999-07-06 Brown University Research Foundation Photo-encoded selective etching for glass based microtechnology applications
US5844200A (en) 1996-05-16 1998-12-01 Sendex Medical, Inc. Method for drilling subminiature through holes in a sensor substrate with a laser
JP2873937B2 (ja) 1996-05-24 1999-03-24 工業技術院長 ガラスの光微細加工方法
US5736709A (en) 1996-08-12 1998-04-07 Armco Inc. Descaling metal with a laser having a very short pulse width and high average power
US5746884A (en) 1996-08-13 1998-05-05 Advanced Micro Devices, Inc. Fluted via formation for superior metal step coverage
US7353829B1 (en) 1996-10-30 2008-04-08 Provectus Devicetech, Inc. Methods and apparatus for multi-photon photo-activation of therapeutic agents
US5965043A (en) 1996-11-08 1999-10-12 W. L. Gore & Associates, Inc. Method for using ultrasonic treatment in combination with UV-lasers to enable plating of high aspect ratio micro-vias
DE69715916T2 (de) 1996-11-13 2003-08-07 Corning Inc Verfahren zur erzeugung eines mit internen kanälen versehenen glaskörpers
KR19980064028A (ko) * 1996-12-12 1998-10-07 윌리엄비.켐플러 금속의 사후 에칭 탈플루오르 저온 공정
JP3118203B2 (ja) 1997-03-27 2000-12-18 住友重機械工業株式会社 レーザ加工方法
JP3644187B2 (ja) 1997-04-17 2005-04-27 三菱電機株式会社 遮断器の蓄勢装置
JP3227106B2 (ja) 1997-04-23 2001-11-12 株式会社ミツトヨ 内径測定方法および内径測定装置
US5933230A (en) 1997-04-28 1999-08-03 International Business Machines Corporation Surface inspection tool
US6156030A (en) 1997-06-04 2000-12-05 Y-Beam Technologies, Inc. Method and apparatus for high precision variable rate material removal and modification
JP3957010B2 (ja) 1997-06-04 2007-08-08 日本板硝子株式会社 微細孔を有するガラス基材
BE1011208A4 (fr) 1997-06-11 1999-06-01 Cuvelier Georges Procede de decalottage de pieces en verre.
DE19728766C1 (de) 1997-07-07 1998-12-17 Schott Rohrglas Gmbh Verwendung eines Verfahrens zur Herstellung einer Sollbruchstelle bei einem Glaskörper
US6078599A (en) 1997-07-22 2000-06-20 Cymer, Inc. Wavelength shift correction technique for a laser
JP3264224B2 (ja) 1997-08-04 2002-03-11 キヤノン株式会社 照明装置及びそれを用いた投影露光装置
GB2335603B (en) 1997-12-05 2002-12-04 Thermolase Corp Skin enhancement using laser light
US6501578B1 (en) 1997-12-19 2002-12-31 Electric Power Research Institute, Inc. Apparatus and method for line of sight laser communications
JPH11197498A (ja) 1998-01-13 1999-07-27 Japan Science & Technology Corp 無機材料内部の選択的改質方法及び内部が選択的に改質された無機材料
US6272156B1 (en) 1998-01-28 2001-08-07 Coherent, Inc. Apparatus for ultrashort pulse transportation and delivery
JPH11240730A (ja) 1998-02-27 1999-09-07 Nec Kansai Ltd 脆性材料の割断方法
JPH11269683A (ja) 1998-03-18 1999-10-05 Armco Inc 金属表面から酸化物を除去する方法及び装置
US6160835A (en) 1998-03-20 2000-12-12 Rocky Mountain Instrument Co. Hand-held marker with dual output laser
JPH11297703A (ja) 1998-04-15 1999-10-29 Fuji Electric Co Ltd 半導体装置の製造方法
US6256328B1 (en) 1998-05-15 2001-07-03 University Of Central Florida Multiwavelength modelocked semiconductor diode laser
US6308055B1 (en) 1998-05-29 2001-10-23 Silicon Laboratories, Inc. Method and apparatus for operating a PLL for synthesizing high-frequency signals for wireless communications
JPH11347758A (ja) 1998-06-10 1999-12-21 Mitsubishi Heavy Ind Ltd 超精密加工装置
JP3410968B2 (ja) * 1998-06-22 2003-05-26 株式会社東芝 パターン形成方法および感光性組成物
US20020062563A1 (en) 1998-06-29 2002-05-30 Jun Koide Method for processing discharge port of ink jet head, and method for manufacturing ink jet head
US6407360B1 (en) 1998-08-26 2002-06-18 Samsung Electronics, Co., Ltd. Laser cutting apparatus and method
US6124214A (en) 1998-08-27 2000-09-26 Micron Technology, Inc. Method and apparatus for ultrasonic wet etching of silicon
DE19851353C1 (de) 1998-11-06 1999-10-07 Schott Glas Verfahren und Vorrichtung zum Schneiden eines Laminats aus einem sprödbrüchigen Werkstoff und einem Kunststoff
JP3178524B2 (ja) 1998-11-26 2001-06-18 住友重機械工業株式会社 レーザマーキング方法と装置及びマーキングされた部材
US6319867B1 (en) 1998-11-30 2001-11-20 Corning Incorporated Glasses for flat panel displays
US7649153B2 (en) 1998-12-11 2010-01-19 International Business Machines Corporation Method for minimizing sample damage during the ablation of material using a focused ultrashort pulsed laser beam
US6445491B2 (en) 1999-01-29 2002-09-03 Irma America, Inc. Method and apparatus for optical sectioning and imaging using time-gated parametric image amplification
US6381391B1 (en) 1999-02-19 2002-04-30 The Regents Of The University Of Michigan Method and system for generating a broadband spectral continuum and continuous wave-generating system utilizing same
KR20010042981A (ko) 1999-02-25 2001-05-25 야스카와 히데아키 레이저를 이용한 피가공물의 가공 방법
DE19908630A1 (de) 1999-02-27 2000-08-31 Bosch Gmbh Robert Abschirmung gegen Laserstrahlen
JP2001105398A (ja) 1999-03-04 2001-04-17 Seiko Epson Corp 加工方法
WO2000053365A1 (fr) 1999-03-05 2000-09-14 Mitsubishi Denki Kabushiki Kaisha Appareil d'usinage au laser
US6484052B1 (en) 1999-03-30 2002-11-19 The Regents Of The University Of California Optically generated ultrasound for enhanced drug delivery
DE60030195T2 (de) 1999-04-02 2006-12-14 Murata Manufacturing Co., Ltd., Nagaokakyo Laserverfahren zur Bearbeitung von Löchern in einer keramischen Grünfolie
JP2000302488A (ja) 1999-04-23 2000-10-31 Seiko Epson Corp ガラスの微細穴加工方法
JP2000301372A (ja) 1999-04-23 2000-10-31 Seiko Epson Corp 透明材料のレーザ加工方法
US6338901B1 (en) * 1999-05-03 2002-01-15 Guardian Industries Corporation Hydrophobic coating including DLC on substrate
US6373565B1 (en) 1999-05-27 2002-04-16 Spectra Physics Lasers, Inc. Method and apparatus to detect a flaw in a surface of an article
CN2388062Y (zh) 1999-06-21 2000-07-19 郭广宗 一层有孔一层无孔双层玻璃车船窗
US6449301B1 (en) 1999-06-22 2002-09-10 The Regents Of The University Of California Method and apparatus for mode locking of external cavity semiconductor lasers with saturable Bragg reflectors
US6259151B1 (en) 1999-07-21 2001-07-10 Intersil Corporation Use of barrier refractive or anti-reflective layer to improve laser trim characteristics of thin film resistors
US6573026B1 (en) 1999-07-29 2003-06-03 Corning Incorporated Femtosecond laser writing of glass, including borosilicate, sulfide, and lead glasses
CN1365500A (zh) 1999-07-29 2002-08-21 康宁股份有限公司 用飞秒脉冲激光在石英基玻璃中直接刻写光学元件
JP2001106545A (ja) 1999-07-30 2001-04-17 Hoya Corp ガラス基板、半導体センサの製造方法および半導体センサ
US6537937B1 (en) 1999-08-03 2003-03-25 Asahi Glass Company, Limited Alkali-free glass
US6391213B1 (en) 1999-09-07 2002-05-21 Komag, Inc. Texturing of a landing zone on glass-based substrates by a chemical etching process
US6344242B1 (en) 1999-09-10 2002-02-05 Mcdonnell Douglas Corporation Sol-gel catalyst for electroless plating
US6234755B1 (en) 1999-10-04 2001-05-22 General Electric Company Method for improving the cooling effectiveness of a gaseous coolant stream, and related articles of manufacture
DE19952331C1 (de) 1999-10-29 2001-08-30 Schott Spezialglas Gmbh Verfahren und Vorrichtung zum schnellen Schneiden eines Werkstücks aus sprödbrüchigem Werkstoff mittels Laserstrahlen
US6479395B1 (en) 1999-11-02 2002-11-12 Alien Technology Corporation Methods for forming openings in a substrate and apparatuses with these openings and methods for creating assemblies with openings
JP2001138083A (ja) 1999-11-18 2001-05-22 Seiko Epson Corp レーザー加工装置及びレーザー照射方法
JP4592855B2 (ja) 1999-12-24 2010-12-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6339208B1 (en) 2000-01-19 2002-01-15 General Electric Company Method of forming cooling holes
US6552301B2 (en) 2000-01-25 2003-04-22 Peter R. Herman Burst-ultrafast laser machining method
US7043072B2 (en) 2000-04-27 2006-05-09 Seiko Epson Corporation Method for examining foreign matters in through holes
TW571081B (en) 2000-04-27 2004-01-11 Seiko Epson Corp Method and apparatus for examining foreign matters in through holes
JP2001354439A (ja) 2000-06-12 2001-12-25 Matsushita Electric Ind Co Ltd ガラス基板の加工方法および高周波回路の製作方法
US6420088B1 (en) * 2000-06-23 2002-07-16 International Business Machines Corporation Antireflective silicon-containing compositions as hardmask layer
JP3797068B2 (ja) 2000-07-10 2006-07-12 セイコーエプソン株式会社 レーザによる微細加工方法
US6399914B1 (en) 2000-07-10 2002-06-04 Igor Troitski Method and laser system for production of high quality laser-induced damage images by using material processing made before and during image creation
JP3530114B2 (ja) 2000-07-11 2004-05-24 忠弘 大見 単結晶の切断方法
JP2002040330A (ja) 2000-07-25 2002-02-06 Olympus Optical Co Ltd 光学素子切換え制御装置
US6417109B1 (en) * 2000-07-26 2002-07-09 Aiwa Co., Ltd. Chemical-mechanical etch (CME) method for patterned etching of a substrate surface
JP4786783B2 (ja) 2000-08-18 2011-10-05 日本板硝子株式会社 ガラス板の切断方法及び記録媒体用ガラス円盤
EP1837902B1 (en) * 2000-08-21 2017-05-24 Dow Global Technologies LLC Use of organosilicate resins as hardmasks for organic polymer dielectrics in fabrication of microelectronic devices
JP4659300B2 (ja) 2000-09-13 2011-03-30 浜松ホトニクス株式会社 レーザ加工方法及び半導体チップの製造方法
KR100673073B1 (ko) 2000-10-21 2007-01-22 삼성전자주식회사 레이저 빔을 이용한 비금속 기판의 절단 방법 및 장치
JP4512786B2 (ja) 2000-11-17 2010-07-28 独立行政法人産業技術総合研究所 ガラス基板の加工方法
US20020110639A1 (en) 2000-11-27 2002-08-15 Donald Bruns Epoxy coating for optical surfaces
US20020082466A1 (en) 2000-12-22 2002-06-27 Jeongho Han Laser surgical system with light source and video scope
JP4880820B2 (ja) 2001-01-19 2012-02-22 株式会社レーザーシステム レーザ支援加工方法
JP2002228818A (ja) 2001-02-05 2002-08-14 Taiyo Yuden Co Ltd レーザー加工用回折光学素子、レーザー加工装置及びレーザー加工方法
KR20020066005A (ko) * 2001-02-08 2002-08-14 황선우 인쇄회로기판의 코팅방법
JP2002265233A (ja) 2001-03-05 2002-09-18 Nippon Sheet Glass Co Ltd レーザ加工用母材ガラスおよびレーザ加工用ガラス
WO2002081142A1 (fr) 2001-04-02 2002-10-17 Taiyo Yuden Co., Ltd. Procede d'usinage de materiau translucide par faisceau laser et materiau translucide usine
JP4092890B2 (ja) 2001-05-31 2008-05-28 株式会社日立製作所 マルチチップモジュール
US6740594B2 (en) * 2001-05-31 2004-05-25 Infineon Technologies Ag Method for removing carbon-containing polysilane from a semiconductor without stripping
JP4929538B2 (ja) 2001-06-29 2012-05-09 株式会社デンソー 半導体装置の製造方法
US6754429B2 (en) 2001-07-06 2004-06-22 Corning Incorporated Method of making optical fiber devices and devices thereof
SG108262A1 (en) 2001-07-06 2005-01-28 Inst Data Storage Method and apparatus for cutting a multi-layer substrate by dual laser irradiation
JP3775250B2 (ja) 2001-07-12 2006-05-17 セイコーエプソン株式会社 レーザー加工方法及びレーザー加工装置
JPWO2003007370A1 (ja) 2001-07-12 2004-11-04 株式会社日立製作所 配線ガラス基板およびその製造方法ならびに配線ガラス基板に用いられる導電性ペーストおよび半導体モジュールならびに配線基板および導体形成方法
WO2003011520A1 (en) 2001-08-02 2003-02-13 Skc Co., Ltd. Method for fabricating chemical mechanical polishing pad using laser
TWI252788B (en) 2001-08-10 2006-04-11 Mitsuboshi Diamond Ind Co Ltd Brittle material substrate chamfering method and chamfering device
JP3795778B2 (ja) 2001-08-24 2006-07-12 株式会社ノリタケカンパニーリミテド 水添ビスフェノールａ型エポキシ樹脂を用いたレジノイド研削砥石
DE60211543T2 (de) 2001-08-30 2007-05-10 Aktina Ltd. Verfahren zur herstellung poröser keramik-metall verbundwerkstoffe und dadurch erhaltene verbundwerkstoffe
JP2003114400A (ja) 2001-10-04 2003-04-18 Sumitomo Electric Ind Ltd レーザ光学システムおよびレーザ加工方法
DE10153310A1 (de) * 2001-10-29 2003-05-22 Infineon Technologies Ag Photolithographisches Strukturierungsverfahren mit einer durch ein plasmaunterstützes Abscheideeverfahren hergestellten Kohlenstoff-Hartmaskenschicht diamantartiger Härte
JP2003148931A (ja) 2001-11-16 2003-05-21 Sefa Technology Kk 中空透明体の内径測定方法およびその装置
JP2003154517A (ja) 2001-11-21 2003-05-27 Seiko Epson Corp 脆性材料の割断加工方法およびその装置、並びに電子部品の製造方法
US6720519B2 (en) 2001-11-30 2004-04-13 Matsushita Electric Industrial Co., Ltd. System and method of laser drilling
US6973384B2 (en) 2001-12-06 2005-12-06 Bellsouth Intellectual Property Corporation Automated location-intelligent traffic notification service systems and methods
JP3998984B2 (ja) 2002-01-18 2007-10-31 富士通株式会社 回路基板及びその製造方法
JP2003226551A (ja) 2002-02-05 2003-08-12 Nippon Sheet Glass Co Ltd 微細孔を有するガラス板およびその製造方法
JP2003238178A (ja) 2002-02-21 2003-08-27 Toshiba Ceramics Co Ltd ガス導入用シャワープレート及びその製造方法
JP4267240B2 (ja) 2002-02-22 2009-05-27 日本板硝子株式会社 ガラス構造物の製造方法
EP2216128B1 (en) 2002-03-12 2016-01-27 Hamamatsu Photonics K.K. Method of cutting object to be processed
DE10211760A1 (de) 2002-03-14 2003-10-02 Werth Messtechnik Gmbh Anordnung und Verfahren zum Messen von Geometrien bzw. Strukturen von im Wesentlichen zweidimensionalen Objekten mittels Bildverarbeitungssenorik
US6787732B1 (en) 2002-04-02 2004-09-07 Seagate Technology Llc Method for laser-scribing brittle substrates and apparatus therefor
US6744009B1 (en) 2002-04-02 2004-06-01 Seagate Technology Llc Combined laser-scribing and laser-breaking for shaping of brittle substrates
CA2428187C (en) 2002-05-08 2012-10-02 National Research Council Of Canada Method of fabricating sub-micron structures in transparent dielectric materials
US6835663B2 (en) * 2002-06-28 2004-12-28 Infineon Technologies Ag Hardmask of amorphous carbon-hydrogen (a-C:H) layers with tunable etch resistivity
JP2004086137A (ja) 2002-07-01 2004-03-18 Seiko Epson Corp 光トランシーバ及びその製造方法
US6992030B2 (en) 2002-08-29 2006-01-31 Corning Incorporated Low-density glass for flat panel display substrates
US6737345B1 (en) 2002-09-10 2004-05-18 Taiwan Semiconductor Manufacturing Company Scheme to define laser fuse in dual damascene CU process
US6822326B2 (en) * 2002-09-25 2004-11-23 Ziptronix Wafer bonding hermetic encapsulation
US7106342B2 (en) 2002-09-27 2006-09-12 Lg Electronics Inc. Method of controlling brightness of user-selected area for image display device
US7098117B2 (en) 2002-10-18 2006-08-29 The Regents Of The University Of Michigan Method of fabricating a package with substantially vertical feedthroughs for micromachined or MEMS devices
KR100444588B1 (ko) 2002-11-12 2004-08-16 삼성전자주식회사 글래스 웨이퍼의 비아홀 형성방법
GB2395157B (en) 2002-11-15 2005-09-07 Rolls Royce Plc Laser driliing shaped holes
JP3997150B2 (ja) 2002-12-06 2007-10-24 ソニー株式会社 基板製造装置および製造方法
US7880117B2 (en) 2002-12-24 2011-02-01 Panasonic Corporation Method and apparatus of drilling high density submicron cavities using parallel laser beams
JP2004209675A (ja) 2002-12-26 2004-07-29 Kashifuji:Kk 押圧切断装置及び押圧切断方法
KR100497820B1 (ko) 2003-01-06 2005-07-01 로체 시스템즈(주) 유리판절단장치
JP3775410B2 (ja) 2003-02-03 2006-05-17 セイコーエプソン株式会社 レーザー加工方法、レーザー溶接方法並びにレーザー加工装置
KR100512971B1 (ko) 2003-02-24 2005-09-07 삼성전자주식회사 솔더볼을 이용한 마이크로 전자 기계 시스템의 제조 방법
JP4346606B2 (ja) 2003-03-03 2009-10-21 日本板硝子株式会社 凹凸のある表面を有する物品の製造方法
US7407889B2 (en) 2003-03-03 2008-08-05 Nippon Sheet Glass Company, Limited Method of manufacturing article having uneven surface
JP2004272014A (ja) 2003-03-10 2004-09-30 Seiko Epson Corp 光通信モジュールの製造方法、光通信モジュール、及び電子機器
EP1609559B1 (en) 2003-03-12 2007-08-08 Hamamatsu Photonics K. K. Laser beam machining method
JP3577492B1 (ja) 2003-03-24 2004-10-13 西山ステンレスケミカル株式会社 ガラスの切断分離方法、フラットパネルディスプレイ用ガラス基板及びフラットパネルディスプレイ
RU2365547C2 (ru) 2003-04-22 2009-08-27 Дзе Кока-Кола Компани Способ и устройство для упрочнения стекла
JP2004330236A (ja) 2003-05-07 2004-11-25 Mitsubishi Gas Chem Co Inc レーザー孔あけ用補助シート
US7511886B2 (en) 2003-05-13 2009-03-31 Carl Zeiss Smt Ag Optical beam transformation system and illumination system comprising an optical beam transformation system
DE10322376A1 (de) 2003-05-13 2004-12-02 Carl Zeiss Smt Ag Axiconsystem und Beleuchtungssystem damit
FR2855084A1 (fr) 2003-05-22 2004-11-26 Air Liquide Optique de focalisation pour le coupage laser
EP1627007B1 (en) * 2003-05-23 2007-10-31 Dow Corning Corporation Siloxane resin-based anti-reflective coating composition having high wet etch rate
JP2004351494A (ja) 2003-05-30 2004-12-16 Seiko Epson Corp レーザーに対して透明な材料の穴あけ加工方法
JP2004363212A (ja) 2003-06-03 2004-12-24 Hitachi Metals Ltd スルーホール導体を持った配線基板
JP2005019576A (ja) 2003-06-25 2005-01-20 Hitachi Metals Ltd スルーホール導体を持った配線基板
JP2005000952A (ja) 2003-06-12 2005-01-06 Nippon Sheet Glass Co Ltd レーザー加工方法及びレーザー加工装置
JP2005011920A (ja) 2003-06-18 2005-01-13 Hitachi Displays Ltd 表示装置とその製造方法
US7492948B2 (en) 2003-06-26 2009-02-17 Denmarks Tekniske Universitet Generation of a desired wavefront with a plurality of phase contrast filters
AU2004276725A1 (en) 2003-06-27 2005-04-07 Purdue Research Foundation Device for detecting biological and chemical particles
KR101193723B1 (ko) 2003-07-18 2012-10-22 하마마츠 포토닉스 가부시키가이샤 반도체 기판, 반도체 기판의 절단방법 및 가공대상물의 절단방법
US6990285B2 (en) 2003-07-31 2006-01-24 Corning Incorporated Method of making at least one hole in a transparent body and devices made by this method
US7258834B2 (en) 2003-08-01 2007-08-21 Agilent Technologies, Inc. Methods and devices for modifying a substrate surface
TWI269684B (en) 2003-08-08 2007-01-01 Hon Hai Prec Ind Co Ltd A process for laser machining
JP4182841B2 (ja) 2003-08-28 2008-11-19 セイコーエプソン株式会社 単結晶基板の加工方法
JP2005104819A (ja) 2003-09-10 2005-04-21 Nippon Sheet Glass Co Ltd 合せガラスの切断方法及び合せガラス切断装置
JP3974127B2 (ja) 2003-09-12 2007-09-12 株式会社東芝 半導体装置の製造方法
JP4702794B2 (ja) 2003-10-06 2011-06-15 Ｈｏｙａ株式会社 感光性ガラス基板の貫通孔形成方法
WO2005033033A1 (ja) 2003-10-06 2005-04-14 Hoya Corporation 貫通孔を有するガラス部品およびその製造方法
US6992371B2 (en) * 2003-10-09 2006-01-31 Freescale Semiconductor, Inc. Device including an amorphous carbon layer for improved adhesion of organic layers and method of fabrication
ES2247890B1 (es) 2003-10-10 2006-11-16 Universitat Politecnica De Catalunya Procedimiento y equipo de metrologia optica para la determinacion de la topografia tridimensional de un orificio, en particular para la medicion de boquillas micrometricas troncoconicas y similares.
JP2005138143A (ja) 2003-11-06 2005-06-02 Disco Abrasive Syst Ltd レーザ光線を利用する加工装置
US7172067B2 (en) 2003-11-10 2007-02-06 Johnson Level & Tool Mfg. Co., Inc. Level case with positioning indentations
JP2005144487A (ja) 2003-11-13 2005-06-09 Seiko Epson Corp レーザ加工装置及びレーザ加工方法
JP2005144622A (ja) 2003-11-18 2005-06-09 Seiko Epson Corp 構造体の製造方法、液滴吐出ヘッド、液滴吐出装置
JP4781635B2 (ja) 2004-03-30 2011-09-28 日東電工株式会社 レーザー加工品の製造方法及びレーザー加工用保護シート
US7586060B2 (en) 2003-12-25 2009-09-08 Nitto Denko Corporation Protective sheet for laser processing and manufacturing method of laser processed parts
KR101035826B1 (ko) 2003-12-30 2011-05-20 코닝 인코포레이티드 고 변형점 유리
US7633033B2 (en) 2004-01-09 2009-12-15 General Lasertronics Corporation Color sensing for laser decoating
JP4349132B2 (ja) 2004-01-09 2009-10-21 アイシン精機株式会社 凹部加工装置
US20080099444A1 (en) 2004-01-16 2008-05-01 Hiroaki Misawa Micro-Fabrication Method
US7316844B2 (en) * 2004-01-16 2008-01-08 Brewer Science Inc. Spin-on protective coatings for wet-etch processing of microelectronic substrates
JP4074589B2 (ja) 2004-01-22 2008-04-09 Ｔｄｋ株式会社 レーザ加工装置及びレーザ加工方法
US7057135B2 (en) 2004-03-04 2006-06-06 Matsushita Electric Industrial, Co. Ltd. Method of precise laser nanomachining with UV ultrafast laser pulses
KR100813350B1 (ko) 2004-03-05 2008-03-12 올림푸스 가부시키가이샤 레이저 가공 장치
US7638440B2 (en) * 2004-03-12 2009-12-29 Applied Materials, Inc. Method of depositing an amorphous carbon film for etch hardmask application
JP2005257339A (ja) 2004-03-09 2005-09-22 Heureka Co Ltd 半導体ウエハ検査装置
JP4737709B2 (ja) 2004-03-22 2011-08-03 日本電気硝子株式会社 ディスプレイ基板用ガラスの製造方法
JP4418282B2 (ja) 2004-03-31 2010-02-17 株式会社レーザーシステム レーザ加工方法
JP2005306702A (ja) 2004-04-26 2005-11-04 Namiki Precision Jewel Co Ltd テーパー形状を有する微小穴の形成方法
JP4631044B2 (ja) 2004-05-26 2011-02-16 国立大学法人北海道大学 レーザ加工方法および装置
US7985942B2 (en) 2004-05-28 2011-07-26 Electro Scientific Industries, Inc. Method of providing consistent quality of target material removal by lasers having different output performance characteristics
US7804043B2 (en) 2004-06-15 2010-09-28 Laserfacturing Inc. Method and apparatus for dicing of thin and ultra thin semiconductor wafer using ultrafast pulse laser
KR20060000515A (ko) 2004-06-29 2006-01-06 대주전자재료 주식회사 플라즈마 디스플레이 패널 격벽용 무연 유리 조성물
US7164465B2 (en) 2004-07-13 2007-01-16 Anvik Corporation Versatile maskless lithography system with multiple resolutions
WO2006023942A2 (en) 2004-08-23 2006-03-02 Optical Research Associates Lighting systems for producing different beam patterns
US7940361B2 (en) 2004-08-31 2011-05-10 Advanced Interconnect Materials, Llc Copper alloy and liquid-crystal display device
JP4065959B2 (ja) 2004-08-31 2008-03-26 国立大学法人東北大学 液晶表示装置、スパッタリングターゲット材および銅合金
JP3887394B2 (ja) 2004-10-08 2007-02-28 芝浦メカトロニクス株式会社 脆性材料の割断加工システム及びその方法
MX2007005018A (es) 2004-10-25 2008-02-19 Mitsuboshi Diamond Ind Co Ltd Metodo y aparato para formar ranuras.
JP4692717B2 (ja) 2004-11-02 2011-06-01 澁谷工業株式会社 脆性材料の割断装置
JP4222296B2 (ja) 2004-11-22 2009-02-12 住友電気工業株式会社 レーザ加工方法とレーザ加工装置
JP2006161124A (ja) 2004-12-09 2006-06-22 Canon Inc 貫通電極の形成方法
US7201965B2 (en) 2004-12-13 2007-04-10 Corning Incorporated Glass laminate substrate having enhanced impact and static loading resistance
CN100546004C (zh) 2005-01-05 2009-09-30 Thk株式会社 工件的截断方法和装置、划线和截断方法、以及带截断功能的划线装置
JP5037138B2 (ja) 2005-01-05 2012-09-26 Ｔｈｋ株式会社 ワークのブレイク方法及び装置、スクライブ及びブレイク方法、並びにブレイク機能付きスクライブ装置
US20060207976A1 (en) 2005-01-21 2006-09-21 Bovatsek James M Laser material micromachining with green femtosecond pulses
EP1811547A4 (en) 2005-02-03 2010-06-02 Nikon Corp OPTICAL INTEGRATOR, OPTICAL LIGHTING DEVICE, EXPOSURE DEVICE AND EXPOSURE METHOD
JP2006248885A (ja) 2005-02-08 2006-09-21 Takeji Arai 超短パルスレーザによる石英の切断方法
JP2006290630A (ja) 2005-02-23 2006-10-26 Nippon Sheet Glass Co Ltd レーザを用いたガラスの加工方法
US7438824B2 (en) 2005-03-25 2008-10-21 National Research Council Of Canada Fabrication of long range periodic nanostructures in transparent or semitransparent dielectrics
US20090055189A1 (en) 2005-04-14 2009-02-26 Anthony Edward Stuart Automatic Replacement of Objectionable Audio Content From Audio Signals
US20060261118A1 (en) 2005-05-17 2006-11-23 Cox Judy K Method and apparatus for separating a pane of brittle material from a moving ribbon of the material
KR101277390B1 (ko) 2005-05-31 2013-06-20 히다치 비아 메카닉스 가부시키가이샤 프린트 배선판의 제조방법 및 그것에 이용되는 동박을 붙인 적층판 및 처리액
CN101189097B (zh) 2005-06-01 2011-04-20 飞腾股份有限公司 激光加工装置及激光加工方法
JP4410159B2 (ja) 2005-06-24 2010-02-03 三菱電機株式会社 交流回転電機
US7425507B2 (en) 2005-06-28 2008-09-16 Micron Technology, Inc. Semiconductor substrates including vias of nonuniform cross section, methods of forming and associated structures
JP4490883B2 (ja) 2005-07-19 2010-06-30 株式会社レーザーシステム レーザ加工装置およびレーザ加工方法
JP4889974B2 (ja) 2005-08-01 2012-03-07 新光電気工業株式会社 電子部品実装構造体及びその製造方法
US7429529B2 (en) 2005-08-05 2008-09-30 Farnworth Warren M Methods of forming through-wafer interconnects and structures resulting therefrom
US7683370B2 (en) 2005-08-17 2010-03-23 Kobe Steel, Ltd. Source/drain electrodes, transistor substrates and manufacture methods, thereof, and display devices
DE102005039833A1 (de) 2005-08-22 2007-03-01 Rowiak Gmbh Vorrichtung und Verfahren zur Materialtrennung mit Laserpulsen
JP2007067031A (ja) 2005-08-30 2007-03-15 Tdk Corp 配線基板の製造方法
US7772115B2 (en) 2005-09-01 2010-08-10 Micron Technology, Inc. Methods for forming through-wafer interconnects, intermediate structures so formed, and devices and systems having at least one solder dam structure
US7626138B2 (en) 2005-09-08 2009-12-01 Imra America, Inc. Transparent material processing with an ultrashort pulse laser
US9138913B2 (en) 2005-09-08 2015-09-22 Imra America, Inc. Transparent material processing with an ultrashort pulse laser
EP1950019B1 (en) 2005-09-12 2011-12-21 Nippon Sheet Glass Company Limited Interlayer film separation method
CN1761378A (zh) 2005-09-20 2006-04-19 沪士电子股份有限公司 直接co2激光钻孔方法
JP4650837B2 (ja) 2005-09-22 2011-03-16 住友電気工業株式会社 レーザ光学装置
JP2007142000A (ja) 2005-11-16 2007-06-07 Denso Corp レーザ加工装置およびレーザ加工方法
US20070111480A1 (en) 2005-11-16 2007-05-17 Denso Corporation Wafer product and processing method therefor
JP4424302B2 (ja) 2005-11-16 2010-03-03 株式会社デンソー 半導体チップの製造方法
US7838331B2 (en) 2005-11-16 2010-11-23 Denso Corporation Method for dicing semiconductor substrate
US7678529B2 (en) * 2005-11-21 2010-03-16 Shin-Etsu Chemical Co., Ltd. Silicon-containing film forming composition, silicon-containing film serving as etching mask, substrate processing intermediate, and substrate processing method
US8307672B2 (en) 2005-11-22 2012-11-13 Olympus Corporation Glass substrate processing method and glass component
US7977601B2 (en) 2005-11-28 2011-07-12 Electro Scientific Industries, Inc. X and Y orthogonal cut direction processing with set beam separation using 45 degree beam split orientation apparatus and method
WO2007069516A1 (en) 2005-12-16 2007-06-21 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus, laser irradiation method, and manufacturing method of semiconductor device
JP4483793B2 (ja) 2006-01-27 2010-06-16 セイコーエプソン株式会社 微細構造体の製造方法及び製造装置
US8007913B2 (en) 2006-02-10 2011-08-30 Corning Incorporated Laminated glass articles and methods of making thereof
US7418181B2 (en) 2006-02-13 2008-08-26 Adc Telecommunications, Inc. Fiber optic splitter module
JP2007220782A (ja) 2006-02-15 2007-08-30 Shin Etsu Chem Co Ltd Ｓｏｉ基板およびｓｏｉ基板の製造方法
JP5245819B2 (ja) 2006-02-15 2013-07-24 旭硝子株式会社 ガラス基板の面取り方法および装置
US7535634B1 (en) 2006-02-16 2009-05-19 The United States Of America As Represented By The National Aeronautics And Space Administration Optical device, system, and method of generating high angular momentum beams
US20090013724A1 (en) 2006-02-22 2009-01-15 Nippon Sheet Glass Company, Limited Glass Processing Method Using Laser and Processing Device
JP4672689B2 (ja) 2006-02-22 2011-04-20 日本板硝子株式会社 レーザを用いたガラスの加工方法および加工装置
US20090176034A1 (en) 2006-02-23 2009-07-09 Picodeon Ltd. Oy Surface Treatment Technique and Surface Treatment Apparatus Associated With Ablation Technology
GB0605576D0 (en) 2006-03-20 2006-04-26 Oligon Ltd MEMS device
JP2007253203A (ja) 2006-03-24 2007-10-04 Sumitomo Electric Ind Ltd レーザ加工用光学装置
KR101530379B1 (ko) 2006-03-29 2015-06-22 삼성전자주식회사 다공성 글래스 템플릿을 이용한 실리콘 나노 와이어의제조방법 및 이에 의해 형성된 실리콘 나노 와이어를포함하는 소자
US7777275B2 (en) 2006-05-18 2010-08-17 Macronix International Co., Ltd. Silicon-on-insulator structures
WO2007135874A1 (ja) 2006-05-18 2007-11-29 Asahi Glass Company, Limited 透明電極付きガラス基板とその製造方法
JP2007307599A (ja) 2006-05-20 2007-11-29 Sumitomo Electric Ind Ltd スルーホール成形体およびレーザー加工方法
US20070298529A1 (en) 2006-05-31 2007-12-27 Toyoda Gosei, Co., Ltd. Semiconductor light-emitting device and method for separating semiconductor light-emitting devices
US7981810B1 (en) * 2006-06-08 2011-07-19 Novellus Systems, Inc. Methods of depositing highly selective transparent ashable hardmask films
ES2428826T3 (es) 2006-07-03 2013-11-11 Hamamatsu Photonics K.K. Procedimiento de procesamiento por láser y chip
CN101489949B (zh) 2006-07-12 2012-12-19 旭硝子株式会社 带保护用玻璃的玻璃基板、使用带保护用玻璃的玻璃基板的显示装置的制造方法及剥离纸用硅酮
DE102006035555A1 (de) 2006-07-27 2008-01-31 Eliog-Kelvitherm Industrieofenbau Gmbh Anordnung und Verfahren zur Verformung von Glasscheiben
EP2051287A4 (en) 2006-08-10 2014-05-21 Ulvac Inc METHOD FOR FORMING A CONDUCTIVE FILM, THIN FILM TRANSISTOR, PANEL WITH THIN FILM TRANSISTOR AND METHOD FOR PRODUCING A THIN FILM TRANSISTOR
US8168514B2 (en) 2006-08-24 2012-05-01 Corning Incorporated Laser separation of thin laminated glass substrates for flexible display applications
WO2008035679A1 (fr) 2006-09-19 2008-03-27 Hamamatsu Photonics K. K. Procédé de traitement au laser et appareil de traitement au laser
JP2008094641A (ja) * 2006-10-06 2008-04-24 Ohara Inc 基板の製造方法
US7534734B2 (en) 2006-11-13 2009-05-19 Corning Incorporated Alkali-free glasses containing iron and tin as fining agents
US20080118159A1 (en) 2006-11-21 2008-05-22 Robert Wendell Sharps Gauge to measure distortion in glass sheet
JP4355743B2 (ja) 2006-12-04 2009-11-04 株式会社神戸製鋼所 Ｃｕ合金配線膜とそのＣｕ合金配線膜を用いたフラットパネルディスプレイ用ＴＦＴ素子、及びそのＣｕ合金配線膜を作製するためのＣｕ合金スパッタリングターゲット
CN101600664B (zh) * 2006-12-20 2013-02-06 陶氏康宁公司 用多层固化的有机硅树脂组合物涂覆或层合的玻璃基材
KR101385075B1 (ko) * 2006-12-20 2014-04-24 다우 코닝 코포레이션 경화된 실리콘 수지 조성물로 피복되거나 적층된 유리 기판
AT504726A1 (de) 2007-01-05 2008-07-15 Lisec Maschb Gmbh Verfahren und vorrichtung zum herstellen eines trennspalts in einer glasscheibe
US8344286B2 (en) 2007-01-18 2013-01-01 International Business Machines Corporation Enhanced quality of laser ablation by controlling laser repetition rate
US20080194109A1 (en) * 2007-02-14 2008-08-14 Renesas Technology Corp. Method of fabricating a semiconductor device
US20100029460A1 (en) 2007-02-22 2010-02-04 Nippon Sheet Glass Company, Limited Glass for anodic bonding
US8642246B2 (en) * 2007-02-26 2014-02-04 Honeywell International Inc. Compositions, coatings and films for tri-layer patterning applications and methods of preparation thereof
JP5483821B2 (ja) 2007-02-27 2014-05-07 ＡｖａｎＳｔｒａｔｅ株式会社 表示装置用ガラス基板および表示装置
US20100119846A1 (en) 2007-03-02 2010-05-13 Masahiro Sawada Reinforced plate glass and method for manufacturing the same
CN101021490B (zh) 2007-03-12 2012-11-14 3i系统公司 平面基板自动检测系统及方法
US8110425B2 (en) * 2007-03-20 2012-02-07 Luminus Devices, Inc. Laser liftoff structure and related methods
US8096147B2 (en) 2007-03-28 2012-01-17 Life Bioscience, Inc. Methods to fabricate a photoactive substrate suitable for shaped glass structures
JP5154814B2 (ja) * 2007-03-29 2013-02-27 東ソー・クォーツ株式会社 石英ガラス材料の製造方法
WO2008126742A1 (ja) 2007-04-05 2008-10-23 Cyber Laser Inc. レーザ加工方法及び切断方法並びに多層基板を有する構造体の分割方法
JP2008288577A (ja) 2007-04-18 2008-11-27 Fujikura Ltd 基板の処理方法、貫通配線基板及びその製造方法、並びに電子部品
DE102007018674A1 (de) 2007-04-18 2008-10-23 Lzh Laserzentrum Hannover E.V. Verfahren zum Bilden von Durchgangslöchern in Bauteilen aus Glas
JP4882854B2 (ja) * 2007-04-27 2012-02-22 セントラル硝子株式会社 ガラス用コーティング組成物
JP5172203B2 (ja) 2007-05-16 2013-03-27 大塚電子株式会社 光学特性測定装置および測定方法
JP2009013046A (ja) 2007-06-05 2009-01-22 Asahi Glass Co Ltd ガラス基板表面を加工する方法
US8236116B2 (en) 2007-06-06 2012-08-07 Centre Luxembourgeois De Recherches Pour Le Verre Et Al Ceramique S.A. (C.R.V.C.) Method of making coated glass article, and intermediate product used in same
JP5435394B2 (ja) 2007-06-08 2014-03-05 日本電気硝子株式会社 強化ガラス基板及びその製造方法
WO2009005462A1 (en) 2007-07-05 2009-01-08 ÅAC Microtec AB Low resistance through-wafer via
US20090029189A1 (en) * 2007-07-25 2009-01-29 Fujifilm Corporation Imprint mold structure, and imprinting method using the same, as well as magnetic recording medium, and method for manufacturing magnetic recording medium
US8169587B2 (en) 2007-08-16 2012-05-01 Apple Inc. Methods and systems for strengthening LCD modules
JP5113462B2 (ja) 2007-09-12 2013-01-09 三星ダイヤモンド工業株式会社 脆性材料基板の面取り方法
US8192642B2 (en) * 2007-09-13 2012-06-05 Brewer Science Inc. Spin-on protective coatings for wet-etch processing of microelectronic substrates
WO2009042212A2 (en) 2007-09-26 2009-04-02 Aradigm Corporation Impinging jet nozzles in stretched or deformed substrates
CN100494879C (zh) 2007-10-08 2009-06-03 天津大学 基于线结构光视觉传感器实现空间圆孔几何参数测量方法
US20100320179A1 (en) 2007-10-16 2010-12-23 Hideki Morita Method for Creating Trench in U Shape in Brittle Material Substrate, Method for Removing Process, Method for Hollowing Process and Chamfering Method Using Same
US20090219491A1 (en) 2007-10-18 2009-09-03 Evans & Sutherland Computer Corporation Method of combining multiple Gaussian beams for efficient uniform illumination of one-dimensional light modulators
JP5404010B2 (ja) 2007-11-22 2014-01-29 味の素株式会社 多層プリント配線板の製造方法及び多層プリント配線板
JP2011505323A (ja) 2007-11-29 2011-02-24 コーニング インコーポレイテッド 改良された強靭性および引っかき抵抗性を有するガラス
KR20090057161A (ko) 2007-12-01 2009-06-04 주식회사 이엔팩 초발수성 좌변기 시트
KR100868228B1 (ko) 2007-12-04 2008-11-11 주식회사 켐트로닉스 유리 기판용 식각액 조성물
IL188029A0 (en) 2007-12-10 2008-11-03 Nova Measuring Instr Ltd Optical method and system
US7749809B2 (en) 2007-12-17 2010-07-06 National Semiconductor Corporation Methods and systems for packaging integrated circuits
JP2009167086A (ja) 2007-12-18 2009-07-30 Hoya Corp 携帯端末用カバーガラス及びその製造方法、並びに携帯端末装置
CN101462822B (zh) 2007-12-21 2012-08-29 鸿富锦精密工业（深圳）有限公司 具有通孔的脆性非金属工件及其加工方法
KR100930672B1 (ko) * 2008-01-11 2009-12-09 제일모직주식회사 실리콘계 하드마스크 조성물 및 이를 이용한 반도체집적회로 디바이스의 제조방법
US20090183764A1 (en) 2008-01-18 2009-07-23 Tenksolar, Inc Detachable Louver System
WO2009107837A1 (ja) 2008-02-28 2009-09-03 株式会社ワイズ・マイクロテクノロジー 貫通孔形成方法、及び、貫通孔形成加工品
JP4423379B2 (ja) 2008-03-25 2010-03-03 合同会社先端配線材料研究所 銅配線、半導体装置および銅配線の形成方法
US8237080B2 (en) 2008-03-27 2012-08-07 Electro Scientific Industries, Inc Method and apparatus for laser drilling holes with Gaussian pulses
FR2929449A1 (fr) 2008-03-28 2009-10-02 Stmicroelectronics Tours Sas S Procede de formation d'une couche d'amorcage de depot d'un metal sur un substrat
JP5345334B2 (ja) 2008-04-08 2013-11-20 株式会社レミ 脆性材料の熱応力割断方法
JP5274085B2 (ja) 2008-04-09 2013-08-28 株式会社アルバック レーザー加工装置、レーザービームのピッチ可変方法、及びレーザー加工方法
US8358888B2 (en) 2008-04-10 2013-01-22 Ofs Fitel, Llc Systems and techniques for generating Bessel beams
TWI414502B (zh) 2008-05-13 2013-11-11 Corning Inc 含稀土元素之玻璃材料及基板及含該基板之裝置
EP2119512B1 (en) 2008-05-14 2017-08-09 Gerresheimer Glas GmbH Method and device for removing contaminating particles from containers on automatic production system
US8053704B2 (en) 2008-05-27 2011-11-08 Corning Incorporated Scoring of non-flat materials
JP2009297734A (ja) 2008-06-11 2009-12-24 Nitto Denko Corp レーザー加工用粘着シート及びレーザー加工方法
US8514476B2 (en) 2008-06-25 2013-08-20 View, Inc. Multi-pane dynamic window and method for making same
US7810355B2 (en) 2008-06-30 2010-10-12 Apple Inc. Full perimeter chemical strengthening of substrates
US9010153B2 (en) 2008-07-02 2015-04-21 Corning Incorporated Method of making shaped glass articles
WO2010001998A1 (ja) 2008-07-03 2010-01-07 株式会社神戸製鋼所 配線構造、薄膜トランジスタ基板およびその製造方法、並びに表示装置
KR20180015272A (ko) 2008-08-08 2018-02-12 코닝 인코포레이티드 강화 유리 제품 및 제조방법
JP5155774B2 (ja) 2008-08-21 2013-03-06 株式会社ノリタケカンパニーリミテド プラトー面加工用レジノイド超砥粒砥石ホイール
US8257603B2 (en) 2008-08-29 2012-09-04 Corning Incorporated Laser patterning of glass bodies
US8426985B2 (en) * 2008-09-04 2013-04-23 Hitachi Chemical Company, Ltd. Positive-type photosensitive resin composition, method for producing resist pattern, and electronic component
US20100068453A1 (en) 2008-09-18 2010-03-18 Hirofumi Imai Method for producing processed glass substrate
JP5339830B2 (ja) 2008-09-22 2013-11-13 三菱マテリアル株式会社 密着性に優れた薄膜トランジスター用配線膜およびこの配線膜を形成するためのスパッタリングターゲット
JP2010075991A (ja) 2008-09-29 2010-04-08 Fujifilm Corp レーザ加工装置
JP5015892B2 (ja) * 2008-10-02 2012-08-29 信越化学工業株式会社 ケイ素含有膜形成用組成物、ケイ素含有膜形成基板及びパターン形成方法
US8445394B2 (en) 2008-10-06 2013-05-21 Corning Incorporated Intermediate thermal expansion coefficient glass
JP5297139B2 (ja) 2008-10-09 2013-09-25 新光電気工業株式会社 配線基板及びその製造方法
US8455357B2 (en) 2008-10-10 2013-06-04 Taiwan Semiconductor Manufacturing Co., Ltd. Method of plating through wafer vias in a wafer for 3D packaging
JP5654471B2 (ja) 2008-10-15 2015-01-14 オー・アー・セー・マイクロテック・アクチボラゲット ビア配線を作るための方法
CN101722367A (zh) 2008-10-17 2010-06-09 华通电脑股份有限公司 印刷电路板的激光钻孔方法
US8895892B2 (en) 2008-10-23 2014-11-25 Corning Incorporated Non-contact glass shearing device and method for scribing or cutting a moving glass sheet
JP5360959B2 (ja) 2008-10-24 2013-12-04 三菱マテリアル株式会社 バリア膜とドレイン電極膜およびソース電極膜が高い密着強度を有する薄膜トランジスター
US20100119808A1 (en) 2008-11-10 2010-05-13 Xinghua Li Method of making subsurface marks in glass
US8092739B2 (en) 2008-11-25 2012-01-10 Wisconsin Alumni Research Foundation Retro-percussive technique for creating nanoscale holes
US9346130B2 (en) 2008-12-17 2016-05-24 Electro Scientific Industries, Inc. Method for laser processing glass with a chamfered edge
EP2202545A1 (en) 2008-12-23 2010-06-30 Karlsruher Institut für Technologie Beam transformation module with an axicon in a double-pass mode
US8367516B2 (en) 2009-01-14 2013-02-05 Taiwan Semiconductor Manufacturing Company, Ltd. Laser bonding for stacking semiconductor substrates
KR101020621B1 (ko) 2009-01-15 2011-03-09 연세대학교 산학협력단 광섬유를 이용하는 광소자 제조 방법, 광섬유를 이용하는 광소자 및 이를 이용한 광 트위저
JP4567091B1 (ja) 2009-01-16 2010-10-20 株式会社神戸製鋼所 表示装置用Ｃｕ合金膜および表示装置
WO2010087483A1 (ja) 2009-02-02 2010-08-05 旭硝子株式会社 半導体デバイス部材用ガラス基板および半導体デバイス部材用ガラス基板の製造方法
US8347651B2 (en) 2009-02-19 2013-01-08 Corning Incorporated Method of separating strengthened glass
US8327666B2 (en) 2009-02-19 2012-12-11 Corning Incorporated Method of separating strengthened glass
US8341976B2 (en) 2009-02-19 2013-01-01 Corning Incorporated Method of separating strengthened glass
US8245540B2 (en) 2009-02-24 2012-08-21 Corning Incorporated Method for scoring a sheet of brittle material
BRPI1008737B1 (pt) 2009-02-25 2019-10-29 Nichia Corp método para fabricar elemento semicondutor
CN201357287Y (zh) 2009-03-06 2009-12-09 苏州德龙激光有限公司 新型皮秒激光加工装置
CN101502914A (zh) 2009-03-06 2009-08-12 苏州德龙激光有限公司 用于喷油嘴微孔加工的皮秒激光加工装置
JP5300544B2 (ja) 2009-03-17 2013-09-25 株式会社ディスコ 光学系及びレーザ加工装置
KR101446971B1 (ko) 2009-03-19 2014-10-06 니폰 덴키 가라스 가부시키가이샤 무알칼리 유리
KR101041140B1 (ko) 2009-03-25 2011-06-13 삼성모바일디스플레이주식회사 기판 절단 방법
JP5201048B2 (ja) 2009-03-25 2013-06-05 富士通株式会社 半導体装置とその製造方法
US20100252959A1 (en) 2009-03-27 2010-10-07 Electro Scientific Industries, Inc. Method for improved brittle materials processing
US20100279067A1 (en) 2009-04-30 2010-11-04 Robert Sabia Glass sheet having enhanced edge strength
WO2010129459A2 (en) 2009-05-06 2010-11-11 Corning Incorporated Carrier for glass substrates
EP2251310B1 (en) 2009-05-13 2012-03-28 Corning Incorporated Methods and systems for forming continuous glass sheets
US8132427B2 (en) 2009-05-15 2012-03-13 Corning Incorporated Preventing gas from occupying a spray nozzle used in a process of scoring a hot glass sheet
US8269138B2 (en) 2009-05-21 2012-09-18 Corning Incorporated Method for separating a sheet of brittle material
DE102009023602B4 (de) 2009-06-02 2012-08-16 Grenzebach Maschinenbau Gmbh Vorrichtung zum industriellen Herstellen elastisch verformbarer großflächiger Glasplatten in hoher Stückzahl
US8925192B2 (en) 2009-06-09 2015-01-06 Ibiden Co., Ltd. Printed wiring board and method for manufacturing the same
TWI395630B (zh) 2009-06-30 2013-05-11 Mitsuboshi Diamond Ind Co Ltd 使用雷射光之玻璃基板加工裝置
JP5416492B2 (ja) 2009-06-30 2014-02-12 三星ダイヤモンド工業株式会社 レーザ光によるガラス基板加工装置
JP5594522B2 (ja) * 2009-07-03 2014-09-24 日本電気硝子株式会社 電子デバイス製造用ガラスフィルム積層体
US8592716B2 (en) 2009-07-22 2013-11-26 Corning Incorporated Methods and apparatus for initiating scoring
CN101637849B (zh) 2009-08-07 2011-12-07 苏州德龙激光有限公司 皮秒激光加工设备的高精度z轴载物平台
CN201471092U (zh) 2009-08-07 2010-05-19 苏州德龙激光有限公司 皮秒激光加工设备的高精度z轴载物平台
JP5500914B2 (ja) 2009-08-27 2014-05-21 株式会社半導体エネルギー研究所 レーザ照射装置
KR20120073249A (ko) 2009-08-28 2012-07-04 코닝 인코포레이티드 화학적으로 강화된 유리 기판으로부터 제품을 레이저 절단하기 위한 방법
US8932510B2 (en) 2009-08-28 2015-01-13 Corning Incorporated Methods for laser cutting glass substrates
KR101094284B1 (ko) 2009-09-02 2011-12-19 삼성모바일디스플레이주식회사 기판 절단 장치 및 이를 이용한 기판 절단 방법
CN102471129B (zh) * 2009-09-18 2015-04-15 日本电气硝子株式会社 玻璃膜的制造方法及玻璃膜的处理方法以及玻璃膜层叠体
DE112010003715T8 (de) 2009-09-20 2013-01-31 Viagan Ltd. Baugruppenbildung von elektronischen Bauelementen auf Waferebene
JP2011079690A (ja) 2009-10-06 2011-04-21 Leo:Kk 回折格子を用いた厚板ガラスのレーザ熱応力割断
US20110088324A1 (en) 2009-10-20 2011-04-21 Wessel Robert B Apparatus and method for solar heat gain reduction in a window assembly
WO2011053551A1 (en) * 2009-10-28 2011-05-05 Dow Corning Corporation Polysilane - polysilazane copolymers and methods for their preparation and use
KR101117573B1 (ko) 2009-10-29 2012-02-29 한국기계연구원 하이브리드 공정을 이용한 ｔｓｖ 가공방법
WO2011056781A1 (en) 2009-11-03 2011-05-12 Corning Incorporated Laser scoring of a moving glass ribbon having a non-constant speed
US8338745B2 (en) 2009-12-07 2012-12-25 Panasonic Corporation Apparatus and methods for drilling holes with no taper or reverse taper
US20110132883A1 (en) 2009-12-07 2011-06-09 Panasonic Corporation Methods for precise laser micromachining
US20120234807A1 (en) 2009-12-07 2012-09-20 J.P. Sercel Associates Inc. Laser scribing with extended depth affectation into a workplace
US8759951B2 (en) * 2009-12-11 2014-06-24 Sharp Kabushiki Kaisha Method for manufacturing semiconductor device, and semiconductor device
JP2011143434A (ja) 2010-01-14 2011-07-28 Hitachi Via Mechanics Ltd レーザ穴あけ方法
TWI438162B (zh) 2010-01-27 2014-05-21 Wintek Corp 強化玻璃切割方法及強化玻璃切割預置結構
US8048810B2 (en) * 2010-01-29 2011-11-01 Taiwan Semiconductor Manufacturing Company, Ltd. Method for metal gate N/P patterning
CA2788591A1 (en) 2010-02-04 2011-08-11 Echelon Laser Systems, Lp Laser etching system and method
US8709702B2 (en) 2010-02-10 2014-04-29 3D Glass Solutions Methods to fabricate a photoactive substrate suitable for microfabrication
US9913726B2 (en) 2010-02-24 2018-03-13 Globus Medical, Inc. Expandable intervertebral spacer and method of posterior insertion thereof
KR101825149B1 (ko) 2010-03-03 2018-02-02 조지아 테크 리서치 코포레이션 무기 인터포저상의 패키지-관통-비아(tpv) 구조 및 그의 제조방법
JP2011178642A (ja) 2010-03-03 2011-09-15 Nippon Sheet Glass Co Ltd 貫通電極付きガラス板の製造方法および電子部品
US8743165B2 (en) 2010-03-05 2014-06-03 Micronic Laser Systems Ab Methods and device for laser processing
US20110229687A1 (en) 2010-03-19 2011-09-22 Qualcomm Incorporated Through Glass Via Manufacturing Process
US8654538B2 (en) 2010-03-30 2014-02-18 Ibiden Co., Ltd. Wiring board and method for manufacturing the same
JP5513227B2 (ja) 2010-04-08 2014-06-04 株式会社フジクラ 微細構造の形成方法、レーザー照射装置、及び基板
US20110248405A1 (en) 2010-04-09 2011-10-13 Qualcomm Incorporated Selective Patterning for Low Cost through Vias
DE202010017893U1 (de) 2010-04-09 2013-01-24 Trumpf Werkzeugmaschinen Gmbh + Co. Kg Werkstücküberzug und damit überzogenes Werkstück
CN102844857A (zh) 2010-04-20 2012-12-26 旭硝子株式会社 半导体器件贯通电极用的玻璃基板
JP5676908B2 (ja) 2010-04-21 2015-02-25 上村工業株式会社 プリント配線基板の表面処理方法及び表面処理剤
US8821211B2 (en) 2010-04-21 2014-09-02 Lg Chem, Ltd. Device for cutting of glass sheet
US8389889B2 (en) 2010-04-22 2013-03-05 Lawrence Livermore National Security, Llc Method and system for laser-based formation of micro-shapes in surfaces of optical elements
DE202010006047U1 (de) 2010-04-22 2010-07-22 Trumpf Werkzeugmaschinen Gmbh + Co. Kg Strahlformungseinheit zur Fokussierung eines Laserstrahls
JP5056983B2 (ja) 2010-04-27 2012-10-24 旭硝子株式会社 磁気ディスクおよび情報記録媒体用ガラス基板の製造方法
US9476842B2 (en) 2010-05-03 2016-10-25 United Technologies Corporation On-the-fly dimensional imaging inspection
US8245539B2 (en) 2010-05-13 2012-08-21 Corning Incorporated Methods of producing glass sheets
KR20130079395A (ko) 2010-05-19 2013-07-10 미쓰비시 가가꾸 가부시키가이샤 카드용 시트 및 카드
JP5796936B2 (ja) 2010-06-01 2015-10-21 キヤノン株式会社 多孔質ガラスの製造方法
US9213451B2 (en) 2010-06-04 2015-12-15 Apple Inc. Thin glass for touch panel sensors and methods therefor
GB2481190B (en) 2010-06-04 2015-01-14 Plastic Logic Ltd Laser ablation
US8411459B2 (en) 2010-06-10 2013-04-02 Taiwan Semiconductor Manufacturing Company, Ltd Interposer-on-glass package structures
SG177021A1 (en) * 2010-06-16 2012-01-30 Univ Nanyang Tech Micoelectrode array sensor for detection of heavy metals in aqueous solutions
US8225252B2 (en) 2010-06-25 2012-07-17 Intel Corporation Systems, methods, apparatus and computer readable mediums for use in association with systems having interference
KR101634422B1 (ko) 2010-06-29 2016-06-28 코닝 인코포레이티드 오버플로 하향인발 융합 공정을 사용해 공동인발하여 만들어진 다층 유리 시트
DE102010025965A1 (de) 2010-07-02 2012-01-05 Schott Ag Verfahren zur spannungsarmen Herstellung von gelochten Werkstücken
DE102010025967B4 (de) 2010-07-02 2015-12-10 Schott Ag Verfahren zur Erzeugung einer Vielzahl von Löchern, Vorrichtung hierzu und Glas-Interposer
DE102010025966B4 (de) 2010-07-02 2012-03-08 Schott Ag Interposer und Verfahren zum Herstellen von Löchern in einem Interposer
DE102010025968B4 (de) 2010-07-02 2016-06-02 Schott Ag Erzeugung von Mikrolöchern
DE202010013161U1 (de) 2010-07-08 2011-03-31 Oerlikon Solar Ag, Trübbach Laserbearbeitung mit mehreren Strahlen und dafür geeigneter Laseroptikkopf
JP5772827B2 (ja) 2010-07-12 2015-09-02 旭硝子株式会社 インプリントモールド用ＴｉＯ２含有石英ガラス基材およびその製造方法
RU2013102422A (ru) 2010-07-12 2014-08-20 ФАЙЛЭЙСЕР ЮЭс-Эй ЭлЭлСи Способ обработки материалов с использованием филаментации
US8999179B2 (en) 2010-07-13 2015-04-07 Taiwan Semiconductor Manufacturing Company, Ltd. Conductive vias in a substrate
KR20120008353A (ko) 2010-07-16 2012-01-30 삼성에스디아이 주식회사 연료 전지 시스템 및 그것에서의 전력 관리 방법
KR20120015366A (ko) 2010-07-19 2012-02-21 엘지디스플레이 주식회사 강화유리 절단방법 및 절단장치
JP5580129B2 (ja) 2010-07-20 2014-08-27 株式会社アマダ 固体レーザ加工装置
JP2012024983A (ja) 2010-07-21 2012-02-09 Shibuya Kogyo Co Ltd 脆性材料の面取り方法とその装置
JP2012027159A (ja) 2010-07-21 2012-02-09 Kobe Steel Ltd 表示装置
JP5729932B2 (ja) 2010-07-22 2015-06-03 キヤノン株式会社 基板貫通孔内への金属充填方法
JP5669001B2 (ja) 2010-07-22 2015-02-12 日本電気硝子株式会社 ガラスフィルムの割断方法、ガラスロールの製造方法、及びガラスフィルムの割断装置
TW201210975A (en) 2010-07-26 2012-03-16 Asahi Glass Co Ltd Alkali-free cover glass composition, and light extracting member using same
JP5574866B2 (ja) 2010-07-26 2014-08-20 浜松ホトニクス株式会社 レーザ加工方法
WO2012014722A1 (ja) 2010-07-26 2012-02-02 浜松ホトニクス株式会社 基板加工方法
WO2012014718A1 (ja) 2010-07-26 2012-02-02 浜松ホトニクス株式会社 インターポーザの製造方法
US8961806B2 (en) 2010-07-26 2015-02-24 Hamamatsu Photonics K.K. Laser processing method
EP2599577A4 (en) 2010-07-26 2016-06-15 Hamamatsu Photonics Kk LASER PROCESSING
WO2012014709A1 (ja) 2010-07-26 2012-02-02 浜松ホトニクス株式会社 レーザ加工方法
KR101940333B1 (ko) 2010-07-26 2019-01-18 하마마츠 포토닉스 가부시키가이샤 기판 가공 방법
JP2012031018A (ja) 2010-07-30 2012-02-16 Asahi Glass Co Ltd 強化ガラス基板及び強化ガラス基板の溝加工方法と強化ガラス基板の切断方法
US8604380B2 (en) 2010-08-19 2013-12-10 Electro Scientific Industries, Inc. Method and apparatus for optimally laser marking articles
US20120052302A1 (en) 2010-08-24 2012-03-01 Matusick Joseph M Method of strengthening edge of glass article
US8584354B2 (en) 2010-08-26 2013-11-19 Corning Incorporated Method for making glass interposer panels
TWI513670B (zh) 2010-08-31 2015-12-21 Corning Inc 分離強化玻璃基板之方法
US8690342B2 (en) 2010-08-31 2014-04-08 Corning Incorporated Energy transfer in scanning laser projectors
TWI402228B (zh) 2010-09-15 2013-07-21 Wintek Corp 強化玻璃切割方法、強化玻璃薄膜製程、強化玻璃切割預置結構及強化玻璃切割件
GB201017506D0 (en) 2010-10-15 2010-12-01 Rolls Royce Plc Hole inspection
US8021950B1 (en) 2010-10-26 2011-09-20 International Business Machines Corporation Semiconductor wafer processing method that allows device regions to be selectively annealed following back end of the line (BEOL) metal wiring layer formation
TWI576320B (zh) 2010-10-29 2017-04-01 康寧公司 用於裁切玻璃帶之方法與設備
JP5874304B2 (ja) 2010-11-02 2016-03-02 日本電気硝子株式会社 無アルカリガラス
US20120105095A1 (en) 2010-11-03 2012-05-03 International Business Machines Corporation Silicon-on-insulator (soi) body-contact pass gate structure
JP5617556B2 (ja) 2010-11-22 2014-11-05 日本電気硝子株式会社 帯状ガラスフィルム割断装置及び帯状ガラスフィルム割断方法
US8616024B2 (en) 2010-11-30 2013-12-31 Corning Incorporated Methods for forming grooves and separating strengthened glass substrate sheets
US20120135853A1 (en) 2010-11-30 2012-05-31 Jaymin Amin Glass articles/materials for use as touchscreen substrates
TWI599429B (zh) 2010-11-30 2017-09-21 康寧公司 在玻璃中形成高密度孔洞陣列的方法
US8607590B2 (en) 2010-11-30 2013-12-17 Corning Incorporated Methods for separating glass articles from strengthened glass substrate sheets
US8796165B2 (en) 2010-11-30 2014-08-05 Corning Incorporated Alkaline earth alumino-borosilicate crack resistant glass
US20120142136A1 (en) 2010-12-01 2012-06-07 Honeywell International Inc. Wafer level packaging process for mems devices
CN102485405B (zh) 2010-12-02 2014-08-27 詹诺普蒂克自动化技术有限公司 用来制造用于安全气囊的单层覆盖物的方法
TW201226345A (en) 2010-12-27 2012-07-01 Liefco Optical Inc Method of cutting tempered glass
KR101298019B1 (ko) 2010-12-28 2013-08-26 (주)큐엠씨 레이저 가공 장치
KR101159697B1 (ko) 2010-12-30 2012-06-26 광주과학기술원 글래스 웨이퍼 기반의 침습형 전극 제작방법
US20120168412A1 (en) 2011-01-05 2012-07-05 Electro Scientific Industries, Inc Apparatus and method for forming an aperture in a substrate
CN103282155B (zh) 2011-01-05 2015-08-05 株式会社之技术综合 光加工装置
WO2012096053A1 (ja) 2011-01-11 2012-07-19 旭硝子株式会社 強化ガラス板の切断方法
EP2668141B1 (en) 2011-01-25 2020-09-16 Corning Incorporated Glass compositions having high thermal and chemical stability
JP2012159749A (ja) 2011-02-01 2012-08-23 Nichia Chem Ind Ltd ベッセルビーム発生装置
US8539794B2 (en) 2011-02-01 2013-09-24 Corning Incorporated Strengthened glass substrate sheets and methods for fabricating glass panels from glass substrate sheets
US8933367B2 (en) 2011-02-09 2015-01-13 Sumitomo Electric Industries, Ltd. Laser processing method
CN103380482B (zh) 2011-02-10 2016-05-25 信越聚合物株式会社 单结晶基板制造方法及内部改质层形成单结晶部件
WO2012108054A1 (ja) 2011-02-10 2012-08-16 信越ポリマー株式会社 単結晶基板の製造方法および内部改質層形成単結晶部材の製造方法
DE102011000768B4 (de) 2011-02-16 2016-08-18 Ewag Ag Laserbearbeitungsverfahren und Laserbearbeitungsvorrichtung mit umschaltbarer Laseranordnung
US8584490B2 (en) 2011-02-18 2013-11-19 Corning Incorporated Laser cutting method
JP5193326B2 (ja) 2011-02-25 2013-05-08 三星ダイヤモンド工業株式会社 基板加工装置および基板加工方法
JP2012187618A (ja) 2011-03-11 2012-10-04 V Technology Co Ltd ガラス基板のレーザ加工装置
US20120235969A1 (en) 2011-03-15 2012-09-20 Qualcomm Mems Technologies, Inc. Thin film through-glass via and methods for forming same
NL2008414A (en) 2011-03-21 2012-09-24 Asml Netherlands Bv Method and apparatus for determining structure parameters of microstructures.
KR101253016B1 (ko) 2011-03-31 2013-04-15 아반스트레이트 가부시키가이샤 유리판의 제조 방법
CN103548038B (zh) 2011-04-07 2017-02-15 能通 无线识别标签、具有该标签的电子产品pcb、以及电子产品管理系统
KR101186464B1 (ko) 2011-04-13 2012-09-27 에스엔유 프리시젼 주식회사 Ｔｓｖ 측정용 간섭계 및 이를 이용한 측정방법
US20120276743A1 (en) 2011-04-26 2012-11-01 Jai-Hyung Won Methods of forming a carbon type hard mask layer using induced coupled plasma and methods of forming patterns using the same
JP5785121B2 (ja) * 2011-04-28 2015-09-24 信越化学工業株式会社 パターン形成方法
GB2490354A (en) 2011-04-28 2012-10-31 Univ Southampton Laser with axially-symmetric beam profile
US8796410B2 (en) * 2011-05-23 2014-08-05 Shin-Etsu Chemical Co., Ltd. Polymer having silphenylene and siloxane structures, a method of preparing the same, an adhesive composition, an adhesive sheet, a protective material for a semiconductor device, and a semiconductor device
JP5873488B2 (ja) 2011-05-25 2016-03-01 株式会社フジクラ 微細孔を配した基体の製造方法、及び微細孔を配した基体
US8986072B2 (en) 2011-05-26 2015-03-24 Corning Incorporated Methods of finishing an edge of a glass sheet
CN102795596B (zh) 2011-05-27 2014-12-10 中国科学院物理研究所 超小2nm直径金属纳米孔的超快激光脉冲法制备
WO2012164649A1 (ja) 2011-05-27 2012-12-06 浜松ホトニクス株式会社 レーザ加工方法
TWI547454B (zh) 2011-05-31 2016-09-01 康寧公司 於玻璃中高速製造微孔洞的方法
KR20140024919A (ko) 2011-06-15 2014-03-03 아사히 가라스 가부시키가이샤 유리판의 절단 방법
JP2013007842A (ja) 2011-06-23 2013-01-10 Toyo Seikan Kaisha Ltd 構造体形成装置、構造体形成方法及び構造体
WO2013002165A1 (ja) 2011-06-28 2013-01-03 株式会社Ihi 脆性的な部材を切断する装置、方法、および切断された脆性的な部材
KR101485140B1 (ko) 2011-07-14 2015-01-22 시마쯔 코포레이션 플라즈마 처리 장치
CN102304323B (zh) * 2011-07-22 2013-05-22 绵阳惠利电子材料有限公司 一种可室温固化的苯基硅树脂敷形涂料
TWI572480B (zh) 2011-07-25 2017-03-01 康寧公司 經層壓及離子交換之強化玻璃疊層
CN102319960A (zh) 2011-07-27 2012-01-18 苏州德龙激光有限公司 超短脉冲激光制作金属薄膜群孔的装置及其方法
WO2013016823A1 (en) 2011-07-29 2013-02-07 Ats Automation Tooling Systems Inc. Systems and methods for producing silicon slim rods
KR101120471B1 (ko) 2011-08-05 2012-03-05 (주)지엘코어 다중 초점 방식의 펄스 레이저를 이용한 취성 재료 절단 장치
US8635887B2 (en) 2011-08-10 2014-01-28 Corning Incorporated Methods for separating glass substrate sheets by laser-formed grooves
JP2013043808A (ja) 2011-08-25 2013-03-04 Asahi Glass Co Ltd 強化ガラス板切断用保持具及び強化ガラス板の切断方法
AU2011101310A4 (en) 2011-08-26 2011-11-10 Sterlite Technologies Limited Glass composition for strengthened cover glass
JPWO2013031655A1 (ja) 2011-08-29 2015-03-23 旭硝子株式会社 強化ガラス板の切断方法、および強化ガラス板切断装置
US20130050226A1 (en) 2011-08-30 2013-02-28 Qualcomm Mems Technologies, Inc. Die-cut through-glass via and methods for forming same
CN103764579A (zh) 2011-08-31 2014-04-30 旭硝子株式会社 强化玻璃板的切断方法及强化玻璃板切断装置
MY169296A (en) 2011-09-09 2019-03-21 Hoya Corp Method of manufacturing an ion-exchanged glass article
CN105366929A (zh) 2011-09-15 2016-03-02 日本电气硝子株式会社 玻璃板切断方法及玻璃板切断装置
WO2013039230A1 (ja) 2011-09-15 2013-03-21 日本電気硝子株式会社 ガラス板切断方法
JP6063670B2 (ja) 2011-09-16 2017-01-18 株式会社アマダホールディングス レーザ切断加工方法及び装置
US10239160B2 (en) 2011-09-21 2019-03-26 Coherent, Inc. Systems and processes that singulate materials
DE112011105635T5 (de) 2011-09-21 2014-08-28 Raydiance, Inc. Systeme und Verfahren zum Vereinzeln von Materialien
JP2013080904A (ja) 2011-09-22 2013-05-02 Hoya Corp 基板製造方法、配線基板の製造方法、ガラス基板および配線基板
JP5864988B2 (ja) 2011-09-30 2016-02-17 浜松ホトニクス株式会社 強化ガラス板切断方法
FR2980859B1 (fr) 2011-09-30 2013-10-11 Commissariat Energie Atomique Procede et dispositif de lithographie
DE102011084128A1 (de) 2011-10-07 2013-04-11 Schott Ag Verfahren zum Schneiden eines Dünnglases mit spezieller Ausbildung der Kante
JP2013091578A (ja) 2011-10-25 2013-05-16 Mitsuboshi Diamond Industrial Co Ltd ガラス基板のスクライブ方法
TWI476888B (zh) 2011-10-31 2015-03-11 Unimicron Technology Corp 嵌埋穿孔中介層之封裝基板及其製法
WO2013065450A1 (ja) 2011-11-04 2013-05-10 株式会社フジクラ 微細孔を備えた基板の製造方法
KR101269474B1 (ko) 2011-11-09 2013-05-30 주식회사 모린스 강화글라스 절단 방법
US20130129947A1 (en) 2011-11-18 2013-05-23 Daniel Ralph Harvey Glass article having high damage resistance
US8677783B2 (en) 2011-11-28 2014-03-25 Corning Incorporated Method for low energy separation of a glass ribbon
WO2013084877A1 (ja) 2011-12-07 2013-06-13 旭硝子株式会社 強化ガラス板の切断方法、および強化ガラス板切断装置
WO2013084879A1 (ja) 2011-12-07 2013-06-13 旭硝子株式会社 強化ガラス板の切断方法、及び強化ガラス板切断装置
KR20130065051A (ko) 2011-12-09 2013-06-19 삼성코닝정밀소재 주식회사 강화 글라스의 절단 방법 및 이를 이용한 터치스크린패널의 제조방법
TW201332917A (zh) 2011-12-12 2013-08-16 Nippon Electric Glass Co 板玻璃的割斷分離方法以及板玻璃的割斷分離裝置
US9010154B2 (en) 2011-12-12 2015-04-21 Nippon Electric Glass Co., Ltd. Method of cleaving and separating a glass sheet
KR20130074432A (ko) 2011-12-26 2013-07-04 삼성디스플레이 주식회사 휴대형 장치용 투명패널, 이의 제조방법 및 이를 이용한 휴대형 장치
CN102540474B (zh) 2012-01-11 2014-08-13 哈尔滨工业大学 一种实现边缘陡峭且光强波动低的平顶光束整形装置的整形控制方法
JP2013152986A (ja) 2012-01-24 2013-08-08 Disco Abrasive Syst Ltd ウエーハの加工方法
CN102585696A (zh) * 2012-02-13 2012-07-18 江苏大学 一种甲基苯基硅树脂基耐高温涂料及其制备方法
WO2013123025A1 (en) 2012-02-14 2013-08-22 Vytran, Llc Optical element cleaver and splicer apparatus and methods
JP2015511571A (ja) 2012-02-28 2015-04-20 エレクトロ サイエンティフィック インダストリーズ インコーポレーテッド 強化ガラスの分離のための方法及び装置並びにこれにより生成された製品
CN104125934A (zh) 2012-02-28 2014-10-29 伊雷克托科学工业股份有限公司 用于分离强化玻璃的方法及装置及由该强化玻璃生产的物品
JP2013178371A (ja) * 2012-02-28 2013-09-09 Hoya Corp 薄膜付き基板の薄膜の除去方法、転写用マスクの製造方法、基板の再生方法、及びマスクブランクの製造方法
US9895771B2 (en) 2012-02-28 2018-02-20 General Lasertronics Corporation Laser ablation for the environmentally beneficial removal of surface coatings
TWI614227B (zh) 2012-02-29 2018-02-11 康寧公司 低ｃｔｅ之無鹼硼鋁矽酸鹽玻璃組成物及包含其之玻璃物件
US9359251B2 (en) 2012-02-29 2016-06-07 Corning Incorporated Ion exchanged glasses via non-error function compressive stress profiles
JP2015516352A (ja) 2012-02-29 2015-06-11 エレクトロ サイエンティフィック インダストリーズ インコーポレーテッド 強化ガラスを加工するための方法及び装置並びにこれにより生成された製品
US9082764B2 (en) 2012-03-05 2015-07-14 Corning Incorporated Three-dimensional integrated circuit which incorporates a glass interposer and method for fabricating the same
JP2013187247A (ja) 2012-03-06 2013-09-19 Nippon Hoso Kyokai <Nhk> インターポーザおよびその製造方法
TW201343296A (zh) 2012-03-16 2013-11-01 Ipg Microsystems Llc 使一工件中具有延伸深度虛飾之雷射切割系統及方法
TW201339111A (zh) 2012-03-29 2013-10-01 Global Display Co Ltd 強化玻璃的切割方法
JP2013203630A (ja) 2012-03-29 2013-10-07 Asahi Glass Co Ltd 強化ガラス板の切断方法
JP2013203631A (ja) 2012-03-29 2013-10-07 Asahi Glass Co Ltd 強化ガラス板の切断方法、及び強化ガラス板切断装置
SE538058C2 (sv) 2012-03-30 2016-02-23 Silex Microsystems Ab Metod att tillhandahålla ett viahål och en routing-struktur
JP2013216513A (ja) 2012-04-05 2013-10-24 Nippon Electric Glass Co Ltd ガラスフィルムの切断方法及びガラスフィルム積層体
WO2013151660A1 (en) 2012-04-05 2013-10-10 Sage Electrochromics, Inc. Method of and apparatus for thermal laser scribe cutting for electrochromic device production; corresponding cut glass panel
JP2015120604A (ja) 2012-04-06 2015-07-02 旭硝子株式会社 強化ガラス板の切断方法、及び強化ガラス板切断システム
FR2989294B1 (fr) 2012-04-13 2022-10-14 Centre Nat Rech Scient Dispositif et methode de nano-usinage par laser
JP5942558B2 (ja) 2012-04-13 2016-06-29 並木精密宝石株式会社 微小空洞形成方法
US20130288010A1 (en) 2012-04-27 2013-10-31 Ravindra Kumar Akarapu Strengthened glass article having shaped edge and method of making
KR20130124646A (ko) 2012-05-07 2013-11-15 주식회사 엠엠테크 강화 유리 절단 방법
US9365446B2 (en) 2012-05-14 2016-06-14 Richard Green Systems and methods for altering stress profiles of glass
DE102012010635B4 (de) 2012-05-18 2022-04-07 Leibniz-Institut für Oberflächenmodifizierung e.V. Verfahren zur 3D-Strukturierung und Formgebung von Oberflächen aus harten, spröden und optischen Materialien
CN102672355B (zh) 2012-05-18 2015-05-13 杭州士兰明芯科技有限公司 Led衬底的划片方法
JP6009225B2 (ja) 2012-05-29 2016-10-19 浜松ホトニクス株式会社 強化ガラス板の切断方法
US9938180B2 (en) 2012-06-05 2018-04-10 Corning Incorporated Methods of cutting glass using a laser
KR20130139106A (ko) 2012-06-12 2013-12-20 삼성디스플레이 주식회사 커버 글라스 가공 방법
JP6022223B2 (ja) 2012-06-14 2016-11-09 株式会社ディスコ レーザー加工装置
JP6065910B2 (ja) 2012-07-09 2017-01-25 旭硝子株式会社 化学強化ガラス板の切断方法
JP6038517B2 (ja) 2012-07-13 2016-12-07 新光電気工業株式会社 配線基板及びその製造方法
AT13206U1 (de) 2012-07-17 2013-08-15 Lisec Maschb Gmbh Verfahren und Anordnung zum Teilen von Flachglas
TW201417928A (zh) 2012-07-30 2014-05-16 Raydiance Inc 具訂製邊形及粗糙度之脆性材料切割
US9676046B2 (en) 2012-07-31 2017-06-13 Makino Milling Machine Co., Ltd. Electrical discharge machining method
KR101395054B1 (ko) 2012-08-08 2014-05-14 삼성코닝정밀소재 주식회사 강화유리 커팅 방법 및 강화유리 커팅용 스테이지
KR20140022980A (ko) 2012-08-14 2014-02-26 (주)하드램 강화유리 레이저 절단 장치 및 방법
KR20140022981A (ko) 2012-08-14 2014-02-26 (주)하드램 기판 에지 보호유닛을 포함한 강화유리 레이저 절단 장치 및 방법
WO2014028022A1 (en) 2012-08-16 2014-02-20 Hewlett-Packard Development Company, L.P. Diagonal openings in photodefinable glass
US20140047957A1 (en) 2012-08-17 2014-02-20 Jih Chun Wu Robust Torque-Indicating Wrench
TW201409777A (zh) 2012-08-22 2014-03-01 Syue-Min Li 發光二極體元件
JP5727433B2 (ja) 2012-09-04 2015-06-03 イムラ アメリカ インコーポレイテッド 超短パルスレーザでの透明材料処理
JP5835696B2 (ja) 2012-09-05 2015-12-24 株式会社東芝 半導体装置およびその製造方法
WO2014038326A1 (ja) 2012-09-07 2014-03-13 旭硝子株式会社 インターポーザ用の中間品を製造する方法およびインターポーザ用の中間品
CN102923939B (zh) 2012-09-17 2015-03-25 江西沃格光电股份有限公司 强化玻璃的切割方法
CN102898014A (zh) 2012-09-29 2013-01-30 江苏太平洋石英股份有限公司 无接触激光切割石英玻璃制品的方法及其装置
CN102916081B (zh) 2012-10-19 2015-07-08 张立国 一种薄膜太阳能电池的清边方法
LT6046B (lt) 2012-10-22 2014-06-25 Uab "Lidaris" Justiruojamų optinių laikiklių pakeitimo įrenginys ir sistema, turinti tokių įrenginių
US20140110040A1 (en) 2012-10-23 2014-04-24 Ronald Steven Cok Imprinted micro-louver structure method
DE102012110971A1 (de) 2012-11-14 2014-05-15 Schott Ag Trennen von transparenten Werkstücken
KR20140064220A (ko) 2012-11-20 2014-05-28 에스케이씨 주식회사 보안필름의 제조방법
WO2014079478A1 (en) 2012-11-20 2014-05-30 Light In Light Srl High speed laser processing of transparent materials
US9758876B2 (en) 2012-11-29 2017-09-12 Corning Incorporated Sacrificial cover layers for laser drilling substrates and methods thereof
US9346706B2 (en) 2012-11-29 2016-05-24 Corning Incorporated Methods of fabricating glass articles by laser damage and etching
US20140154439A1 (en) 2012-11-30 2014-06-05 Corning Incorporated Methods for glass strengthening
US10086584B2 (en) 2012-12-13 2018-10-02 Corning Incorporated Glass articles and methods for controlled bonding of glass sheets with carriers
WO2014093775A1 (en) 2012-12-13 2014-06-19 Corning Incorporated Glass and methods of making glass articles
US10014177B2 (en) 2012-12-13 2018-07-03 Corning Incorporated Methods for processing electronic devices
TWI617437B (zh) 2012-12-13 2018-03-11 康寧公司 促進控制薄片與載體間接合之處理
CN203021443U (zh) 2012-12-24 2013-06-26 深圳大宇精雕科技有限公司 玻璃板水射流切割机
CN103013374B (zh) 2012-12-28 2014-03-26 吉林大学 仿生防粘疏水疏油贴膜
WO2014104368A1 (ja) 2012-12-29 2014-07-03 Hoya株式会社 磁気ディスク用ガラス基板および磁気ディスク
EP2754524B1 (de) 2013-01-15 2015-11-25 Corning Laser Technologies GmbH Verfahren und Vorrichtung zum laserbasierten Bearbeiten von flächigen Substraten, d.h. Wafer oder Glaselement, unter Verwendung einer Laserstrahlbrennlinie
WO2014121261A1 (en) 2013-02-04 2014-08-07 Newport Corporation Method and apparatus for laser cutting transparent and semitransparent substrates
US10670510B2 (en) 2013-02-05 2020-06-02 Massachusetts Institute Of Technology 3-D holographic imaging continuous flow cytometry
CN104968623A (zh) 2013-02-07 2015-10-07 日本板硝子株式会社 玻璃组合物、化学强化用玻璃组合物、强化玻璃物品及显示器用保护玻璃
US9783451B2 (en) 2013-02-07 2017-10-10 Nippon Sheet Glass Company, Limited Glass composition, glass composition for chemical strengthening, strengthened glass article, and cover glass for display
US9498920B2 (en) 2013-02-12 2016-11-22 Carbon3D, Inc. Method and apparatus for three-dimensional fabrication
JP5830044B2 (ja) * 2013-02-15 2015-12-09 信越化学工業株式会社 レジスト下層膜形成用組成物及びパターン形成方法
US9393760B2 (en) 2013-02-28 2016-07-19 Corning Incorporated Laminated glass articles with phase-separated claddings and methods for forming the same
CN103143841B (zh) 2013-03-08 2014-11-26 西北工业大学 一种利用皮秒激光加工孔的方法
US9784961B2 (en) 2013-03-08 2017-10-10 Church & Dwight Co., Inc. Sperm motility test device and method
KR102209964B1 (ko) 2013-03-13 2021-02-02 삼성디스플레이 주식회사 피코초 레이저 가공 장치
EP3473372B1 (en) 2013-03-15 2021-01-27 Kinestral Technologies, Inc. Method for cutting strengthened glass
EP2781296B1 (de) 2013-03-21 2020-10-21 Corning Laser Technologies GmbH Vorrichtung und verfahren zum ausschneiden von konturen aus flächigen substraten mittels laser
JP5779296B2 (ja) 2013-03-22 2015-09-16 日本板硝子株式会社 ガラス組成物、化学強化用ガラス組成物、強化ガラス物品、およびディスプレイ用のカバーガラス
JP6186016B2 (ja) 2013-04-04 2017-08-23 エル・ピー・ケー・エフ・レーザー・ウント・エレクトロニクス・アクチエンゲゼルシヤフト 基板に貫通穴を開ける方法及び装置
KR101857336B1 (ko) 2013-04-04 2018-05-11 엘피케이에프 레이저 앤드 일렉트로닉스 악티엔게젤샤프트 기판을 분리시키기 위한 방법 및 장치
DE102013103370A1 (de) 2013-04-04 2014-10-09 Lpkf Laser & Electronics Ag Verfahren zum Einbringen von Durchbrechungen in ein Glassubstrat sowie ein derart hergestelltes Glassubstrat
CN103316990B (zh) 2013-05-28 2015-06-10 江苏大学 脉冲激光驱动飞片加载薄板的微冲裁自动化装置及其方法
CN103273195B (zh) 2013-05-28 2015-03-04 江苏大学 激光间接冲击下金属薄板的微冲裁自动化装置及其方法
CN105473522B (zh) 2013-06-21 2019-12-03 康宁股份有限公司 低温下的蚀刻速率提高
US9776891B2 (en) 2013-06-26 2017-10-03 Corning Incorporated Filter and methods for heavy metal remediation of water
KR101344368B1 (ko) 2013-07-08 2013-12-24 정우라이팅 주식회사 수직형 유리관 레이저 절단장치
CN103359948A (zh) 2013-07-12 2013-10-23 深圳南玻伟光导电膜有限公司 钢化玻璃的切割方法
US20150021513A1 (en) 2013-07-17 2015-01-22 Yun-jeong Kim Cmp slurry composition for polishing an organic layer and method of forming a semiconductor device using the same
KR20150014167A (ko) 2013-07-29 2015-02-06 삼성전기주식회사 유리 코어가 구비된 인쇄회로기판
US9102007B2 (en) 2013-08-02 2015-08-11 Rofin-Sinar Technologies Inc. Method and apparatus for performing laser filamentation within transparent materials
US9984270B2 (en) 2013-08-05 2018-05-29 Apple Inc. Fingerprint sensor in an electronic device
WO2015023525A1 (en) 2013-08-15 2015-02-19 Corning Incorporated Alkali-doped and alkali-free boroaluminosilicate glass
WO2015029286A1 (ja) 2013-08-27 2015-03-05 パナソニック株式会社 薄膜トランジスタ基板の製造方法及び薄膜トランジスタ基板
US9296646B2 (en) 2013-08-29 2016-03-29 Corning Incorporated Methods for forming vias in glass substrates
WO2015044091A1 (en) 2013-09-26 2015-04-02 Atotech Deutschland Gmbh Novel adhesion promoting process for metallisation of substrate surfaces
CN105579621B (zh) 2013-09-26 2018-07-13 德国艾托特克公司 用于衬底表面金属化的新颖粘着促进剂
CN203509350U (zh) 2013-09-27 2014-04-02 东莞市盛雄激光设备有限公司 皮秒激光加工装置
US9589799B2 (en) * 2013-09-30 2017-03-07 Lam Research Corporation High selectivity and low stress carbon hardmask by pulsed low frequency RF power
CN103531414B (zh) 2013-10-14 2016-03-02 南京三乐电子信息产业集团有限公司 一种栅控行波管栅网的皮秒脉冲激光切割制备方法
US10510576B2 (en) 2013-10-14 2019-12-17 Corning Incorporated Carrier-bonding methods and articles for semiconductor and interposer processing
US10017410B2 (en) 2013-10-25 2018-07-10 Rofin-Sinar Technologies Llc Method of fabricating a glass magnetic hard drive disk platter using filamentation by burst ultrafast laser pulses
US10005152B2 (en) 2013-11-19 2018-06-26 Rofin-Sinar Technologies Llc Method and apparatus for spiral cutting a glass tube using filamentation by burst ultrafast laser pulses
US11053156B2 (en) 2013-11-19 2021-07-06 Rofin-Sinar Technologies Llc Method of closed form release for brittle materials using burst ultrafast laser pulses
DE102013223637B4 (de) 2013-11-20 2018-02-01 Trumpf Laser- Und Systemtechnik Gmbh Verfahren zum Behandeln eines lasertransparenten Substrats zum anschließenden Trennen des Substrats
CN106414358B (zh) 2013-11-20 2021-08-13 康宁股份有限公司 耐划痕的硼铝硅酸盐玻璃
JP2017501951A (ja) 2013-11-25 2017-01-19 コーニング インコーポレイテッド 実質的に柱面を成す鏡面反射面の形状を決定するための方法
US10144088B2 (en) 2013-12-03 2018-12-04 Rofin-Sinar Technologies Llc Method and apparatus for laser processing of silicon by filamentation of burst ultrafast laser pulses
CN103746027B (zh) 2013-12-11 2015-12-09 西安交通大学 一种在ito导电薄膜表面刻蚀极细电隔离槽的方法
US10293436B2 (en) 2013-12-17 2019-05-21 Corning Incorporated Method for rapid laser drilling of holes in glass and products made therefrom
US9676167B2 (en) 2013-12-17 2017-06-13 Corning Incorporated Laser processing of sapphire substrate and related applications
US9850160B2 (en) 2013-12-17 2017-12-26 Corning Incorporated Laser cutting of display glass compositions
US9687936B2 (en) 2013-12-17 2017-06-27 Corning Incorporated Transparent material cutting with ultrafast laser and beam optics
US9701563B2 (en) 2013-12-17 2017-07-11 Corning Incorporated Laser cut composite glass article and method of cutting
US10442719B2 (en) 2013-12-17 2019-10-15 Corning Incorporated Edge chamfering methods
US9815730B2 (en) 2013-12-17 2017-11-14 Corning Incorporated Processing 3D shaped transparent brittle substrate
US20150166393A1 (en) 2013-12-17 2015-06-18 Corning Incorporated Laser cutting of ion-exchangeable glass substrates
US20150165560A1 (en) 2013-12-17 2015-06-18 Corning Incorporated Laser processing of slots and holes
EP3083514B1 (en) 2013-12-17 2019-03-06 Corning Incorporated 3-d forming of glass and associated product
US20150165563A1 (en) 2013-12-17 2015-06-18 Corning Incorporated Stacked transparent material cutting with ultrafast laser beam optics, disruptive layers and other layers
US9285593B1 (en) 2013-12-20 2016-03-15 AdlOptica Optical Systems GmbH Method and apparatus for shaping focused laser beams
GB2536588B (en) 2014-01-17 2018-08-15 Harbin Inst Technology Method and apparatus based on fiber bragg grating probe for measuring structures of a micro part
CN106132688B (zh) 2014-01-27 2020-07-14 康宁股份有限公司 用于薄片与载体的受控粘结的制品和方法
JP2017511756A (ja) 2014-01-27 2017-04-27 コーニング インコーポレイテッド 薄いシートの担体との制御された結合のための表面改質層の処理
JP6273873B2 (ja) 2014-02-04 2018-02-07 大日本印刷株式会社 ガラスインターポーザー基板の製造方法
US9425125B2 (en) 2014-02-20 2016-08-23 Altera Corporation Silicon-glass hybrid interposer circuitry
CN106170678A (zh) 2014-02-24 2016-11-30 瑞尼斯豪公司 利用视觉探针检测物体的方法
WO2015127583A1 (en) 2014-02-25 2015-09-03 Schott Ag Chemically toughened glass article with low coefficient of thermal expansion
US9618331B2 (en) 2014-03-20 2017-04-11 Harbin Institute Of Technology Method and equipment based on detecting the polarization property of a polarization maintaining fiber probe for measuring structures of a micro part
KR102269921B1 (ko) 2014-03-31 2021-06-28 삼성디스플레이 주식회사 유리 강화용 조성물 및 이를 이용한 터치 스크린 글래스의 제조 방법
CN106457758B (zh) 2014-04-09 2018-11-16 康宁股份有限公司 装置改性的基材制品及其制备方法
EP3138120B1 (en) 2014-04-30 2018-04-18 Corning Incorporated Etch back processes of bonding material for the manufacture of through-glass vias
US8980727B1 (en) 2014-05-07 2015-03-17 Applied Materials, Inc. Substrate patterning using hybrid laser scribing and plasma etching processing schemes
US9472859B2 (en) 2014-05-20 2016-10-18 International Business Machines Corporation Integration of area efficient antennas for phased array or wafer scale array antenna applications
EP3154593B1 (en) 2014-06-13 2020-08-05 The Regents of the University of California Nanostructured carriers for guided and targeted on-demand substance delivery
TWI730945B (zh) 2014-07-08 2021-06-21 美商康寧公司 用於雷射處理材料的方法與設備
EP2965853B2 (en) 2014-07-09 2020-03-25 High Q Laser GmbH Processing of material using elongated laser beams
EP3169477B1 (en) 2014-07-14 2020-01-29 Corning Incorporated System for and method of processing transparent materials using laser beam focal lines adjustable in length and diameter
CN105481236A (zh) 2014-07-14 2016-04-13 康宁股份有限公司 用于切割叠层结构的系统和方法
JP5972317B2 (ja) 2014-07-15 2016-08-17 株式会社マテリアル・コンセプト 電子部品およびその製造方法
US9558390B2 (en) 2014-07-25 2017-01-31 Qualcomm Incorporated High-resolution electric field sensor in cover glass
NL2015160A (en) 2014-07-28 2016-07-07 Asml Netherlands Bv Illumination system, inspection apparatus including such an illumination system, inspection method and manufacturing method.
KR20170036715A (ko) 2014-07-30 2017-04-03 코닝 인코포레이티드 일정한 유리 기판의 에칭을 위한 초음파 탱크 및 방법
DE102014113339A1 (de) 2014-09-16 2016-03-17 Lpkf Laser & Electronics Ag Verfahren zur Erzeugung von Ausnehmungen in einem Material
CN104344202A (zh) 2014-09-26 2015-02-11 张玉芬 一种有孔玻璃
CN106795044A (zh) 2014-10-03 2017-05-31 日本板硝子株式会社 带贯通电极玻璃基板的制造方法以及玻璃基板
US20160201474A1 (en) 2014-10-17 2016-07-14 United Technologies Corporation Gas turbine engine component with film cooling hole feature
EP3212588B1 (en) 2014-10-31 2021-04-07 Corning Incorporated Dimensionally stable fast etching glasses
DE102014116958B9 (de) 2014-11-19 2017-10-05 Trumpf Laser- Und Systemtechnik Gmbh Optisches System zur Strahlformung eines Laserstrahls, Laserbearbeitungsanlage, Verfahren zur Materialbearbeitung und Verwenden einer gemeinsamen langgezogenen Fokuszone zur Lasermaterialbearbeitung
EP3854513B1 (de) 2014-11-19 2024-01-03 TRUMPF Laser- und Systemtechnik GmbH System zur asymmetrischen optischen strahlformung
US9548273B2 (en) 2014-12-04 2017-01-17 Invensas Corporation Integrated circuit assemblies with rigid layers used for protection against mechanical thinning and for other purposes, and methods of fabricating such assemblies
TWI506242B (zh) 2014-12-12 2015-11-01 Ind Tech Res Inst 薄膜曲率量測裝置及其方法
JP2018507154A (ja) 2015-01-12 2018-03-15 コーニング インコーポレイテッド マルチフォトン吸収方法を用いた熱強化基板のレーザー切断
EP3102358A4 (en) 2015-01-13 2017-10-25 Rofin-Sinar Technologies, Inc. Method and system for scribing brittle material followed by chemical etching
ES2784361T3 (es) 2015-01-22 2020-09-24 Becton Dickinson Co Dispositivos y sistemas para la creación de códigos de barras moleculares de dianas de ácido nucleico en células individuales
WO2016118683A1 (en) 2015-01-23 2016-07-28 Corning Incorporated Coated substrate for use in sensors
US20160219704A1 (en) 2015-01-28 2016-07-28 Rf Micro Devices, Inc. Hermetically sealed through vias (tvs)
MX2017010941A (es) 2015-02-27 2018-01-16 Brigham & Womens Hospital Inc Sistemas de formacion de imagen y metodos de uso de los mismos.
WO2016138871A1 (en) 2015-03-05 2016-09-09 Harbin Institute Of Technology Method and equipment for dimensional measurement of a micro part based on fiber laser with multi-core fbg probe
EP3848334A1 (en) 2015-03-24 2021-07-14 Corning Incorporated Alkaline earth boro-aluminosilicate glass article with laser cut edge
US10203476B2 (en) 2015-03-25 2019-02-12 Microsoft Technology Licensing, Llc Lens assembly
US20160312365A1 (en) 2015-04-24 2016-10-27 Kanto Gakuin School Corporation Electroless plating method and electroless plating film
EP3288705A1 (en) * 2015-04-28 2018-03-07 Corning Incorporated Method of laser drilling through holes in substrates using an exit sacrificial cover layer; corresponding workpiece
JP2018519230A (ja) 2015-05-01 2018-07-19 コーニング インコーポレイテッド ガラスシートの厚さを制御するための方法及び装置
CN106298467B (zh) * 2015-05-28 2019-10-18 联华电子股份有限公司 半导体元件图案的制作方法
TW201704177A (zh) 2015-06-10 2017-02-01 康寧公司 蝕刻玻璃基板的方法及玻璃基板
US9442377B1 (en) * 2015-06-15 2016-09-13 Rohm And Haas Electronic Materials Llc Wet-strippable silicon-containing antireflectant
CN104897062B (zh) 2015-06-26 2017-10-27 北方工业大学 一种零件异面平行孔形位偏差的视觉测量方法及装置
CN107835794A (zh) 2015-07-10 2018-03-23 康宁股份有限公司 在挠性基材板中连续制造孔的方法和与此相关的产品
US9741561B2 (en) 2015-07-10 2017-08-22 Uchicago Argonne, Llc Transparent nanocrystalline diamond coatings and devices
KR102552275B1 (ko) * 2015-07-31 2023-07-07 삼성디스플레이 주식회사 마스크 제조방법
US9832868B1 (en) 2015-08-26 2017-11-28 Apple Inc. Electronic device display vias
WO2017038075A1 (ja) 2015-08-31 2017-03-09 日本板硝子株式会社 微細構造付きガラスの製造方法
US20170103249A1 (en) * 2015-10-09 2017-04-13 Corning Incorporated Glass-based substrate with vias and process of forming the same
US9760986B2 (en) 2015-11-11 2017-09-12 General Electric Company Method and system for automated shaped cooling hole measurement
CN105693102B (zh) * 2016-01-12 2018-08-24 中国建筑材料科学研究总院 石英玻璃酸刻蚀用掩膜及石英玻璃摆片的酸刻蚀方法
TW201737766A (zh) 2016-01-21 2017-10-16 康寧公司 處理基板的方法
DE102017001010A1 (de) 2016-02-05 2017-08-10 Mitutoyo Corporation Bildmessvorrichtung und Programm
US10410883B2 (en) 2016-06-01 2019-09-10 Corning Incorporated Articles and methods of forming vias in substrates
US10249495B2 (en) * 2016-06-28 2019-04-02 Applied Materials, Inc. Diamond like carbon layer formed by an electron beam plasma process
US10134657B2 (en) 2016-06-29 2018-11-20 Corning Incorporated Inorganic wafer having through-holes attached to semiconductor wafer
EP3507057A1 (en) 2016-08-30 2019-07-10 Corning Incorporated Laser processing of transparent materials
US10366904B2 (en) 2016-09-08 2019-07-30 Corning Incorporated Articles having holes with morphology attributes and methods for fabricating the same
CN113399816B (zh) 2016-09-30 2023-05-16 康宁股份有限公司 使用非轴对称束斑对透明工件进行激光加工的设备和方法
DE102018100299A1 (de) 2017-01-27 2018-08-02 Schott Ag Strukturiertes plattenförmiges Glaselement und Verfahren zu dessen Herstellung
KR20190116378A (ko) 2017-03-06 2019-10-14 엘피케이에프 레이저 앤드 일렉트로닉스 악티엔게젤샤프트 전자기 방사선과 후속 에칭공정을 이용해 재료 안으로 적어도 하나의 리세스를 도입하기 위한 방법
US10580725B2 (en) 2017-05-25 2020-03-03 Corning Incorporated Articles having vias with geometry attributes and methods for fabricating the same
US11078112B2 (en) 2017-05-25 2021-08-03 Corning Incorporated Silica-containing substrates with vias having an axially variable sidewall taper and methods for forming the same
US11174195B2 (en) 2017-08-31 2021-11-16 Nippon Electric Glass Co., Ltd. Method for etching glass, etching treatment device and glass sheet
US20190185373A1 (en) 2017-12-19 2019-06-20 Corning Incorporated Methods for etching vias in glass-based articles employing positive charge organic molecules
CN108191258B (zh) * 2018-01-30 2020-05-05 武汉理工大学 一种dlc薄膜增硬玻璃及其制备方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050266320A1 (en) * 2004-05-28 2005-12-01 Hoya Corporation Mask blank and mask for electron beam exposure
US20130089701A1 (en) * 2011-10-06 2013-04-11 Electro Scientific Industries, Inc. Substrate containing aperture and methods of forming the same
CN103165625A (zh) * 2011-12-15 2013-06-19 电力集成公司 用于制造半导体器件的复合晶圆

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112763486A (zh) * 2020-11-30 2021-05-07 成都飞机工业（集团）有限责任公司 一种基于线激光扫描的复材壁板阵列孔检测方法
CN112763486B (zh) * 2020-11-30 2022-05-10 成都飞机工业（集团）有限责任公司 一种基于线激光扫描的复材壁板阵列孔检测方法

Also Published As

Publication number Publication date
US20190348301A1 (en) 2019-11-14
TW201806082A (zh) 2018-02-16
US10410883B2 (en) 2019-09-10
WO2017210376A1 (en) 2017-12-07
US11114309B2 (en) 2021-09-07
US20170352553A1 (en) 2017-12-07
KR20190013869A (ko) 2019-02-11
JP2019519457A (ja) 2019-07-11
EP3465745A1 (en) 2019-04-10

Similar Documents

Publication Publication Date Title
CN109314058A (zh) 在衬底中形成通孔的制品和方法
US8247080B2 (en) Coating structure and method
CN102906859A (zh) 对用于光刻掩模应用的富含硼的膜的设计
JP2018531865A (ja) グラフェン膜の転写方法およびグラフェン膜を含む基板
TWI285919B (en) Method and apparatus for manufacturing semiconductor
KR101953044B1 (ko) 규소 화합물용 에칭 가스 조성물 및 에칭 방법
Guan et al. Stress control of plasma enhanced chemical vapor deposited silicon oxide film from tetraethoxysilane
JP6797816B2 (ja) 成膜装置の洗浄方法
US9660185B2 (en) Pattern fortification for HDD bit patterned media pattern transfer
TWI700742B (zh) 用於塗敷石英表面的石英表面處理方法
CN111757856A (zh) 具有低的hf蚀刻后粗糙度的不含碱性硼硅酸盐玻璃
JP2022049828A (ja) パターン形成方法および半導体装置の製造方法
Watanabe et al. Anticorrosive behavior of SiCxNyOz film formed by non-heat assistance plasma-enhanced chemical vapor deposition using monomethylsilane, nitrogen and argon gases
JP2008007343A (ja) アルミナ被覆材およびその製造方法
KR101805185B1 (ko) 금속 배선 형성을 위한 식각액 조성물
TW201032911A (en) Non destructive selective deposition removal of non-metallic deposits from aluminum containing substrates
TW200918644A (en) Etchant and applications thereof
KR102275790B1 (ko) 석영 부재의 표면 처리 방법 및 석영 부재
KR20240009949A (ko) 에칭 방법 및 반도체 소자의 제조 방법
EP3694297A2 (en) Method for repairing coated printed circuit boards
KR20090119103A (ko) 내플라즈마 부재 및 그 제조방법
Nomura et al. High-rate etching of silicon oxide and nitride using narrow-gap high-pressure (3.3 kPa) hydrogen plasma
TW202212979A (zh) 減少微電子工件之euv圖案化中的微橋缺陷之方法
TW202246464A (zh) 微細加工處理劑，及微細加工處理方法
Shi et al. Deep wet etching process of Pyrex glass for vacuum packaging

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination