JP6797816B2 - 成膜装置の洗浄方法 - Google Patents
成膜装置の洗浄方法 Download PDFInfo
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- JP6797816B2 JP6797816B2 JP2017545549A JP2017545549A JP6797816B2 JP 6797816 B2 JP6797816 B2 JP 6797816B2 JP 2017545549 A JP2017545549 A JP 2017545549A JP 2017545549 A JP2017545549 A JP 2017545549A JP 6797816 B2 JP6797816 B2 JP 6797816B2
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- 238000000034 method Methods 0.000 title claims description 73
- 238000004140 cleaning Methods 0.000 title claims description 11
- 230000015572 biosynthetic process Effects 0.000 claims description 51
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 42
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 26
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 22
- 239000007788 liquid Substances 0.000 claims description 22
- 238000001039 wet etching Methods 0.000 claims description 22
- 239000011651 chromium Substances 0.000 claims description 18
- 238000007749 high velocity oxygen fuel spraying Methods 0.000 claims description 17
- 238000011282 treatment Methods 0.000 claims description 17
- 229910052759 nickel Inorganic materials 0.000 claims description 16
- 229910052804 chromium Inorganic materials 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 14
- 229910052782 aluminium Inorganic materials 0.000 claims description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 13
- 238000005507 spraying Methods 0.000 claims description 13
- 238000005530 etching Methods 0.000 claims description 11
- 230000003746 surface roughness Effects 0.000 claims description 11
- 238000000231 atomic layer deposition Methods 0.000 claims description 9
- 239000003795 chemical substances by application Substances 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 9
- 230000008021 deposition Effects 0.000 claims description 9
- 239000002243 precursor Substances 0.000 claims description 8
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 7
- 238000005240 physical vapour deposition Methods 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 238000007772 electroless plating Methods 0.000 claims description 6
- 239000000446 fuel Substances 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 238000007751 thermal spraying Methods 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 239000007864 aqueous solution Substances 0.000 claims description 4
- 238000009713 electroplating Methods 0.000 claims description 4
- 238000004381 surface treatment Methods 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- UFGZSIPAQKLCGR-UHFFFAOYSA-N chromium carbide Chemical compound [Cr]#C[Cr]C#[Cr] UFGZSIPAQKLCGR-UHFFFAOYSA-N 0.000 claims description 3
- 239000010941 cobalt Substances 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- 239000000843 powder Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 229910003470 tongbaite Inorganic materials 0.000 claims description 3
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims 1
- 238000007740 vapor deposition Methods 0.000 claims 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 19
- 238000000576 coating method Methods 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 7
- 238000005498 polishing Methods 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 4
- 230000002411 adverse Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 230000004580 weight loss Effects 0.000 description 2
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000012047 saturated solution Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4407—Cleaning of reactor or reactor parts by using wet or mechanical methods
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
- Chemically Coating (AREA)
- Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
- Detergent Compositions (AREA)
- Electroplating Methods And Accessories (AREA)
- Coating By Spraying Or Casting (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
- Weting (AREA)
Description
− 電気めっきまたは無電解めっき法で付与されたNiまたはCr皮膜で被覆されている成膜空間壁にて囲まれた成膜空間を有する成膜装置を用意するステップと、
− 成膜空間中に導入されている少なくとも1つの基材上に1つの層を堆積するために、成膜空間中に導入される少なくとも1つの前駆体材料を用意するステップと、
− 少なくとも1回の成膜処理を行って、少なくとも1つの基材上に1つの層を付与するステップと、
− 選択的ウェットエッチング処理によって前記成膜処理後の成膜空間壁を洗浄するステップであって、成膜処理の間に成膜空間壁上に形成される成膜残渣の除去用の液体エッチング剤にて成膜空間壁を処理するステップと、
を含み、
成膜空間壁に影響を与えずに成膜残渣が除去されるように、成膜空間壁の皮膜の組成が、成膜処理の間に成膜空間壁上に付着する成膜残渣、および選択的ウェットエッチング処理の間に使用される液体エッチング剤の組成に適応しており、NiまたはCr皮膜の表面が、少なくとも1.5μm、好ましくは少なくとも2.5μm、より好ましくは少なくとも3.2μmの表面粗さ(Ra)となるように処理されており、その表面粗さとするための表面の処理が、HVOF溶射処理(高速酸素燃料溶射)またはHP−HVOF溶射処理(高圧高速酸素燃料溶射)である、方法を提供する。
Claims (14)
- CVD、PECVD、ALD、PVDおよび蒸着の1つを使用して少なくとも1つの層を付与するために基材が処理される、成膜装置の成膜空間部材から成膜残渣を容易に除去するための方法であって、
− 電気めっきまたは無電解めっき法で付与されたNiまたはCr皮膜で被覆されている成膜空間壁にて囲まれた成膜空間を有する成膜装置を用意するステップと、
− 成膜空間中に導入されている少なくとも1つの基材上に1つの層を堆積するために、成膜空間中に導入される少なくとも1つの前駆体材料を用意するステップと、
− 少なくとも1回の成膜処理を行って、少なくとも1つの基材上に1つの層を付与するステップと、
− 選択的ウェットエッチング処理によって前記成膜処理後の成膜空間壁を洗浄するステップであって、成膜処理の間に成膜空間壁上に形成される成膜残渣の除去用の液体エッチング剤にて成膜空間壁を処理するステップと、
を含み、
成膜空間壁に影響を与えずに成膜残渣が除去されるように、成膜空間壁の皮膜の組成が、成膜処理の間に成膜空間壁上に付着する成膜残渣、および選択的ウェットエッチング処理の間に使用される液体エッチング剤の組成に適応しており、NiまたはCr皮膜の表面が、少なくとも1.5μmの表面粗さ(Ra)となるように処理されており、その表面粗さとするための表面の処理が、高速酸素燃料溶射を意味するHVOF溶射処理、または高圧高速酸素燃料溶射を意味するHP−HVOF溶射処理である、方法。 - 成膜処理は、ALDである、
請求項1に記載の方法。 - 成膜空間壁は、アルミニウムで製造されている、
請求項1または2に記載の方法。 - 成膜壁は、チタンで製造されている、
請求項1または2に記載の方法。 - 前駆体材料は、Alを含み、
成膜空間壁から除去される成膜残渣は、Al2O3を含み、
液体エッチング剤は、KOH、NaOH、またはテトラメチルアンモニウムヒドロキシド(TMAOH)の水溶液を含む、
請求項1から4のいずれか一項に記載の方法。 - 液体エッチング剤中のKOH、NaOH、またはTMAOHの濃度は、20〜600g/lの範囲内である、
請求項5に記載の方法。 - 液体エッチング剤中のKOH、NaOH、またはTMAOHの濃度は、40〜400g/lの範囲内である、
請求項6に記載の方法。 - 液体エッチング剤中のKOH、NaOH、またはTMAOHの濃度は、250g/lである、
請求項7に記載の方法。 - 選択的ウェットエッチング処理の間、液体エッチング剤の温度は、15℃〜90℃の範囲である、
請求項5から請求項8のいずれかに記載の方法。 - 液体エッチング剤の温度は、20℃〜80℃の範囲である、
請求項9に記載の方法。 - 液体エッチング剤の温度は、60℃である、
請求項10に記載の方法。 - HVOF溶射処理またはHP−HVOF溶射処理は、炭化クロム(Cr3C2)、炭化タングステン(化学式:WC)、およびコバルト(Co)の少なくとも1つを含む粉末を用いて行う、
請求項1に記載の方法。 - 前記Niまたは前記Cr皮膜の表面が、少なくとも2.5μmの表面粗さ(Ra)となるように処理される、
請求項1に記載の方法。 - 前記Niまたは前記Cr皮膜の表面が、少なくとも3.2μmの表面粗さ(Ra)となるように処理される、
請求項1に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL2014497 | 2015-03-20 | ||
NL2014497A NL2014497B1 (en) | 2015-03-20 | 2015-03-20 | Method for cleaning deposition apparatus. |
PCT/NL2016/050195 WO2016153343A1 (en) | 2015-03-20 | 2016-03-21 | Method for cleaning deposition apparatus |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018515685A JP2018515685A (ja) | 2018-06-14 |
JP6797816B2 true JP6797816B2 (ja) | 2020-12-09 |
Family
ID=53783816
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2017545549A Active JP6797816B2 (ja) | 2015-03-20 | 2016-03-21 | 成膜装置の洗浄方法 |
Country Status (7)
Country | Link |
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EP (1) | EP3271498B1 (ja) |
JP (1) | JP6797816B2 (ja) |
KR (1) | KR102590817B1 (ja) |
CN (1) | CN107406979B (ja) |
NL (1) | NL2014497B1 (ja) |
TW (1) | TWI683028B (ja) |
WO (1) | WO2016153343A1 (ja) |
Families Citing this family (6)
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JP6749225B2 (ja) * | 2016-12-06 | 2020-09-02 | 東京エレクトロン株式会社 | クリーニング方法 |
US10662520B2 (en) * | 2017-03-29 | 2020-05-26 | Applied Materials, Inc. | Method for recycling substrate process components |
WO2019011507A1 (de) * | 2017-07-14 | 2019-01-17 | Inficon Gmbh | Verfahren zum kontrollierten abtragen einer schutzschicht von einer oberfläche eines bauteils |
KR102261501B1 (ko) | 2017-09-29 | 2021-06-07 | 주식회사 엘지에너지솔루션 | 전극 합제의 제조 방법 및 전극 합제 |
JP7334974B2 (ja) * | 2020-10-05 | 2023-08-29 | アルハイテック株式会社 | 反応液連続供給型水素発生装置 |
CN114196998A (zh) * | 2021-12-13 | 2022-03-18 | 拓荆科技股份有限公司 | 半导体反应腔中部件的处理方法以及半导体反应腔 |
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JPH09174199A (ja) * | 1995-10-24 | 1997-07-08 | Mishima Kosan Co Ltd | 連続鋳造用鋳型 |
US6699375B1 (en) * | 2000-06-29 | 2004-03-02 | Applied Materials, Inc. | Method of extending process kit consumable recycling life |
JP2002134481A (ja) * | 2000-10-25 | 2002-05-10 | Taiheiyo Cement Corp | 真空処理装置用部材 |
US20050028838A1 (en) * | 2002-11-25 | 2005-02-10 | Karl Brueckner | Cleaning tantalum-containing deposits from process chamber components |
US20060105182A1 (en) * | 2004-11-16 | 2006-05-18 | Applied Materials, Inc. | Erosion resistant textured chamber surface |
US20070117396A1 (en) * | 2005-11-22 | 2007-05-24 | Dingjun Wu | Selective etching of titanium nitride with xenon difluoride |
US7595271B2 (en) * | 2005-12-01 | 2009-09-29 | Asm America, Inc. | Polymer coating for vapor deposition tool |
KR100777043B1 (ko) * | 2007-05-22 | 2007-11-16 | 주식회사 테스 | 비정질 탄소막 형성 방법 및 이를 이용한 반도체 소자의제조 방법 |
CN101654774B (zh) * | 2008-08-19 | 2011-09-07 | 中芯国际集成电路制造(上海)有限公司 | 抑制金属焊盘腐蚀的方法 |
CA2690697A1 (en) * | 2009-01-27 | 2010-07-27 | Air Products And Chemicals, Inc. | Selective etching and formation of xenon difluoride |
NL2003836C2 (en) | 2009-11-19 | 2011-05-23 | Levitech B V | Floating wafer track with lateral stabilization mechanism. |
EP2362002A1 (en) * | 2010-02-18 | 2011-08-31 | Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO | Continuous patterned layer deposition |
US8852685B2 (en) * | 2010-04-23 | 2014-10-07 | Lam Research Corporation | Coating method for gas delivery system |
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2016
- 2016-03-21 WO PCT/NL2016/050195 patent/WO2016153343A1/en active Application Filing
- 2016-03-21 TW TW105108681A patent/TWI683028B/zh active
- 2016-03-21 EP EP16718516.4A patent/EP3271498B1/en active Active
- 2016-03-21 JP JP2017545549A patent/JP6797816B2/ja active Active
- 2016-03-21 KR KR1020177024868A patent/KR102590817B1/ko active IP Right Grant
- 2016-03-21 CN CN201680015694.3A patent/CN107406979B/zh active Active
Also Published As
Publication number | Publication date |
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EP3271498B1 (en) | 2018-12-05 |
EP3271498A1 (en) | 2018-01-24 |
WO2016153343A1 (en) | 2016-09-29 |
NL2014497B1 (en) | 2017-01-19 |
NL2014497A (en) | 2016-10-10 |
CN107406979B (zh) | 2019-06-14 |
CN107406979A (zh) | 2017-11-28 |
KR102590817B1 (ko) | 2023-10-19 |
KR20170128263A (ko) | 2017-11-22 |
TW201641742A (zh) | 2016-12-01 |
JP2018515685A (ja) | 2018-06-14 |
TWI683028B (zh) | 2020-01-21 |
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