WO2004078668A1 - 凹凸のある表面を有する物品の製造方法 - Google Patents
凹凸のある表面を有する物品の製造方法 Download PDFInfo
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- WO2004078668A1 WO2004078668A1 PCT/JP2004/002020 JP2004002020W WO2004078668A1 WO 2004078668 A1 WO2004078668 A1 WO 2004078668A1 JP 2004002020 W JP2004002020 W JP 2004002020W WO 2004078668 A1 WO2004078668 A1 WO 2004078668A1
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- Prior art keywords
- thin film
- etching
- substrate
- region
- indenter
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1847—Manufacturing methods
- G02B5/1857—Manufacturing methods using exposure or etching means, e.g. holography, photolithography, exposure to electron or ion beams
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00031—Regular or irregular arrays of nanoscale structures, e.g. etch mask layer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00634—Processes for shaping materials not provided for in groups B81C1/00444 - B81C1/00626
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
- C03C17/23—Oxides
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
- C03C17/23—Oxides
- C03C17/245—Oxides by deposition from the vapour phase
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C19/00—Surface treatment of glass, not in the form of fibres or filaments, by mechanical means
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
- G02B1/118—Anti-reflection coatings having sub-optical wavelength surface structures designed to provide an enhanced transmittance, e.g. moth-eye structures
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/132—Integrated optical circuits characterised by the manufacturing method by deposition of thin films
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/21—Oxides
- C03C2217/213—SiO2
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/21—Oxides
- C03C2217/23—Mixtures
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/70—Properties of coatings
- C03C2217/77—Coatings having a rough surface
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/30—Aspects of methods for coating glass not covered above
- C03C2218/31—Pre-treatment
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/30—Aspects of methods for coating glass not covered above
- C03C2218/32—After-treatment
- C03C2218/328—Partly or completely removing a coating
- C03C2218/33—Partly or completely removing a coating by etching
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/12038—Glass (SiO2 based materials)
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/12097—Ridge, rib or the like
Definitions
- the present invention relates to a method for producing an article having irregularities on a surface by utilizing a difference in an etching rate. This technology is useful, for example, for manufacturing various microdevices.
- a method has been proposed in which a compressed layer is formed by partially pressing the surface of a glass substrate, and then a surface having irregularities is formed by etching (Japanese Patent Application Laid-Open No. 2002-16909). 43 gazette).
- this method concave portions and convex portions are formed on the surface of the glass substrate due to the difference in etching rate between the compressed portion (layer) and the remaining portion in the glass substrate.
- An object of the present invention is to alleviate restrictions on a substrate in a method of forming a surface having irregularities by utilizing a difference in etching rate.
- the present invention provides a step of applying pressure to a predetermined region of a surface of a thin film formed on a substrate, and etching a region including at least a part of the predetermined region and at least a part of a remaining portion of the surface excluding the predetermined region.
- the difference of the etching rate in the thin film on the substrate, not the substrate is used.
- the limitation on the substrate material in the method of forming the irregularities by utilizing the difference in the etching rate is less strict than in the past.
- FIGS. 1A to 1H are process diagrams showing one embodiment of the present invention, and each show a cross section near the surface in each process.
- FIGS. 3A to 3D are partial process diagrams according to still another embodiment of the present invention, each showing a change in cross-sectional shape near the surface as etching proceeds.
- FIGS. 4A to 4D are partial process diagrams according to still another embodiment of the present invention, and each show a change in the cross-sectional shape near the surface as etching proceeds.
- 5A to 5G are perspective views illustrating the shapes of the protrusions that can be manufactured according to the present invention.
- 6A and 6B are perspective views each illustrating an optical waveguide that can be manufactured according to the present invention.
- FIG. 7 is a perspective view illustrating a low reflection member that can be manufactured according to the present invention.
- FIG. 8 is a cross-sectional view illustrating an array waveguide that can be manufactured according to the present invention.
- FIG. 9A and FIG. 9B are perspective views each illustrating a micro prism that can be manufactured by the present invention.
- Figure 1 OA illustrates a microchemical chip that can be manufactured according to the present invention _
- FIG. 10B is a perspective view
- FIG. 10B is a cross-sectional view showing an example of the manufacturing process.
- FIG. 11 is a perspective view showing the shape of the surface produced in the example.
- the present invention by applying pressure to a part of the thin film, a portion where the etching rate changes under a predetermined etching condition is generated, and by utilizing the difference in the etching rate in the etching under the predetermined etching condition, The unevenness is formed on the surface of the article.
- only the thin film may be etched, and the uneven surface may be composed of only the thin film material.
- the etching may be further advanced, and the etching may be continued until a part of the substrate is exposed.
- the etching may be continued until at least a part of the substrate is removed.
- a projection made of a thin film material and a substrate material in other words, a projection with a thin film can be formed.
- etching continues until the thin film is removed from the area to be etched. According to this, it is possible to form a convex portion made of only the substrate material.
- any type of thin film material can be used as long as the difference in etching rate can be realized.
- an inorganic thin film particularly an oxide thin film that is chemically stable and easy to control the etching rate is suitable. ing.
- an inorganic thin film is used, for example, the thermal stability of an uneven surface is improved.
- the inorganic thin film is not particularly limited, but is preferably an oxide thin film containing S i 0 2, further oxide thin film containing preferably at least one selected particularly with S i 0 2 from B 2 0 3 and AI 2 0 3 .
- the oxide thin film containing S i 0 2, control of the properties Therefore, fluorine, GeO 2, or the like may be appropriately added.
- the inorganic thin film is preferably amorphous.
- the inorganic thin film is a SiO 2 thin film.
- an amorphous film that does not contain or has a very small amount of a modified oxide such as an alkali metal oxide has a large change in density due to the application of pressure.
- the thin film is mainly composed of an inorganic substance (specifically, the content of the inorganic substance exceeds 50% by mass).
- the present invention may be implemented using a substrate on which a thin film has been formed in advance, or may be implemented as a method further including a step of forming a thin film on the substrate.
- the thin film may be formed by various conventionally known methods such as a vapor deposition method, a sputtering method, a sol-gel method, and a submerged deposition method.
- the thin film suffices with one layer, but may have a laminated structure including two or more layers, or may have a gradient composition in which the composition gradually changes in the thickness direction. By using a laminated structure or a gradient composition, the etching rate can be finely adjusted.
- the film thickness is preferably 100 ⁇ m or more, particularly 500 nm or more.
- the thickness of the thin film is preferably 1 OO tm or less, particularly preferably ⁇ 0 t m or less.
- the substrate material may be glass, ceramic, semiconductor or resin.
- glass examples include quartz glass, soda lime glass, aluminosilicate glass, crystallized glass, low-expansion glass, and asbestos glass, alumina and the like as ceramics, and Si and GaAs as semiconductors.
- PC polycarbonate
- PMMA polymethyl methacrylate
- a substrate made of a material which can be etched under predetermined etching conditions applied to the above-mentioned region may be selected. If the substrate material is selected such that the etching rate of the substrate is higher than the etching rate of the thin film under the above-mentioned predetermined etching conditions, it becomes easy to form a high projection.
- Partial pressing may be performed using, for example, an indenter. It is preferable to use a high hardness material such as diamond for the tip of the indenter.
- the indenter may be merely pressed against a predetermined portion of the surface of the thin film.However, the pressure is applied to a predetermined region of the thin film by relatively moving the surface and the indenter while pressing against the surface of the thin film. You may. According to this, a portion where the etching rate changes along the locus of the indenter can be formed.
- the surface and the two or more indenters may be relatively moved while pressing the two or more indenters against the surface of the thin film. According to this, after the etching, for example, band-shaped convex portions and concave portions can be formed. As described above, the range in which the pressure is partially applied may be appropriately selected according to the target uneven shape. For example, when the surface of the thin film and the indenter are relatively moved so that the locus of the indenter on the surface of the thin film intersects, a portion in which the etching rate has changed can be formed in a frame or lattice. In this case, the area where the indenter trajectory intersects (intersection area) is pressed more than once, so ⁇
- the local rating may change further.
- the change in the etching rate in the intersection area can be made substantially the same as the change in the etching rate in the pressing area other than this area.
- the degree of change in the etching rate is affected by the magnitude of the pressure.
- the change in the etching rate becomes substantially constant when the pressure exceeds a predetermined value. More specifically, the rate of change in etching rate Ichiboku accordance pressure increases the pressure is less than a predetermined value (1 - E P ZE .; E p after pressure application, E. pressure applied prior to the E Tchingure The rate of change of the etching rate becomes substantially constant when the pressure exceeds a predetermined value.
- the indenter is moved while applying a pressure equal to or higher than the predetermined value, the change in the etching rate between the region pressed twice or more and the region pressed only once, and consequently the protrusion after the etching. Can be substantially the same.
- the application of pressure to the thin film may be performed using a member having two or more indenters, for example, a mold.
- a member having two or more indenters for example, a mold.
- the use of this member improves the production efficiency during mass production.
- Pressure may be applied to the thin film while heating the substrate. Heating makes it difficult for the substrate and thin film to break. For this reason, it is easy to form a portion where the etching rate has changed to a deep portion of the thin film. According to this, it becomes easy to obtain a high convex portion.
- Pressing of the surface of the thin film may be performed by means other than the indenter.
- the wet blast method and the sand blast method it is also possible to supply at least one selected from particles and liquid to a part of the surface of the thin film and partially press the surface.
- the wet blast method is a method in which particles dispersed in a solution, for example, free abrasive grains, are caused to collide with a predetermined range of member surfaces at a high pressure.
- the sandblasting method is a method in which particles, for example, loose abrasive particles, collide with the surface of a member at high pressure together with an air flow.
- the etching rate may be randomly varied by utilizing the characteristics of the blast method.
- the thin film may be irradiated with a laser to scatter a portion of the thin film (ablation), and the reaction at that time may be applied as pressure.
- the indenter When using an indenter, the indenter may be pushed in using ultrasonic waves.
- the type of etching is not limited as long as a difference can occur in the etching rate, but is usually wet etching.
- the etching solution may be acidic or alkaline, and the former includes at least one selected from, for example, sulfuric acid, nitric acid, hydrochloric acid, sulfamic acid, acetic acid, and hydrofluoric acid (hydrofluoric acid). It is preferable that the compound contains at least one selected from the group consisting of potassium hydroxide, sodium hydroxide and ammonia.
- the etchant may be appropriately selected in consideration of the material to be etched. For example, when etching a thin film containing SiO 2 , nitric acid, ammonium fluoride, or the like is appropriately mixed with hydrofluoric acid. Etchants are preferred.
- etching is used as a term including all of wet etching, dry etching, and a combination thereof (eg, etching by etching after dry etching).
- etching for example, dry etching
- a specific etching for example, jet etching
- a step of further dry-etching the surface is further performed.
- An article having an uneven surface may be manufactured. In this case, even if the thin film is etched to such an extent that the thin film remains on at least a part of the surface, the surface is receded to such an extent that the thin film is removed by dry etching. Good.
- the region to be etched may be the entire surface of the thin film or a part thereof. In the latter case, the region may be etched in a state where at least a part of the extension of the region to be etched is defined by the resist.
- the present invention includes the articles obtained by the method described above.
- a thin film 12 is formed on a substrate 10 (FIG. 1A), and an indenter 14 is brought into contact with a part of the surface of the thin film 12, and the surface of the thin film is partially pressed by the indenter 14 ( Figure 1B).
- the part 16 of the thin film is affected by the stress.
- the stress is released by releasing the indenter ⁇ 4 (Fig. 1C)
- the effect of the stress partially remains on the thin film (Fig. 1D).
- the portion where the influence of the stress remains and the etching rate has changed is referred to as an “affected residual portion” 16.
- the affected residual portion 16 may be formed to be deeper than the illustrated embodiment, for example, to include a part of the substrate 10.
- the deep influence residual portion is advantageous for forming a high convex portion.
- distortion occurs in the internal structure, and, for example, the composition of the material is locally changed.
- the affected residual portion 16 may be a compressed layer in which the material is compressed by pressing.
- the substrate with a thin film 10 is wet-etched from the surface side of the thin film 12 (FIGS. 1E to 1H).
- the etching rate is relatively small in the affected part 16, so that the retreat speed of the surface of the thin film 12 is smaller than that of the surroundings in the area where the affected part 16 is formed. Because of this, etch one
- the cross-sectional shape of the convex portion 18 usually changes from a substantially trapezoidal shape to a triangular shape, an arc shape, an elliptical arc shape, and the like. ( Figure 1H).
- the etching may be stopped when the convex portion 18 has a desired shape.
- the convex portion 18 may become smaller as the etching proceeds.
- it is preferable to stop the etching at the stage when the affected residual portion 16 is removed (FIG. 1G).
- the shape of the uneven surface can be adjusted by selecting the thickness and composition of the thin film, the pressing method, the etching conditions, and the like. For example, according to the method shown in FIGS. 2A to 2D, a convex portion 19 made of only a thin film material is formed on a substrate # 0, and the surface of another region (concave portion) is formed of the substrate material. ( Figure 2D).
- a convex portion 27 partially formed of the thin film material 28 and the remaining portion formed of the substrate material is formed, and The surface of this region is formed from the substrate material (Fig. 3D).
- the etching rate of the substrate 20 is made larger than the etching rate of the thin film 22, the height of the projection 27 can be increased.
- the protrusions 29 made of only the substrate material are formed on the substrate 20, and the surfaces of other regions are also formed of the substrate material ( Figure 4D). Also in this method, it is preferable that the etching rate of the substrate 20 be larger than the etching rate of the thin film 22.
- the projection 27 may be formed, and the thin film material 28 may be removed from the projection 27. This removal may be performed by mechanical polishing, etching using an etchant having an etching rate higher for a thin film material than for a substrate material, or the like.
- various shapes of projections can be formed. For example, by pressing two or more indenters simultaneously or by pressing one indenter sequentially, a truncated cone (Fig. 5A), a hemispherical or semi-elliptical sphere (Fig. 5B), a conical shape (Fig. 5C), a plurality of truncated pyramid-shaped (FIG. 5D) projections may be formed.
- a ridge-shaped protrusion can be formed (Figs. 5E to 5G).
- the cross-sectional shape of the ridge can be controlled to a trapezoid (Fig. 5E), a semi-ellipse (Fig. 5F), a triangle (Fig. 5G), etc. by appropriately adjusting the etching conditions and the like.
- These projections may be formed by sequentially moving one indenter.
- minute projections can be easily formed at desired positions.
- the projections shown above are not particularly limited, but are, for example, about 10 nm to 10 ⁇ m in height, about The shortest length can be about 100 nm to 20 ⁇ m.
- various devices that can be manufactured by utilizing the present invention will be exemplified. According to the present invention, since a fine surface texture can be efficiently formed, various optical devices, microchemical chips, and the like can be efficiently manufactured by using this.
- FIG. 6 is an example of an optical waveguide.
- a clad layer 32 is formed on a substrate 30, and a core layer 34 is disposed thereon.
- the protruding portion (core portion) 34a of the core layer may be formed by pressing and etching the core layer under the conditions shown in FIG. After forming the protrusions 34a, the cladding layer 36 is formed.
- the core layer 38 may be formed under the conditions shown in FIG. This In the waveguide of the present invention, the conditions shown in FIG.
- the 32 may be formed by slightly etching. In these waveguides, light propagates while being confined within the core.
- the low-reflection member shown in Fig. 7 has a moth-eye structure.
- a large number of projections 42 are regularly arranged on the surface of the thin film on the substrate 40.
- the cross-sectional shape of the convex portion 42 is substantially the same semi-elliptical sphere. Since the light incident on this surface is irregularly reflected by the convex portion 42, the reflectance in a specific direction can be reduced to almost zero.
- the 42 may be arranged irregularly and their shapes need not be the same.
- Such a surface structure can be easily formed by further etching using, for example, a wet blast method or a sand blast method.
- a core is formed in a stripe shape on a quartz substrate 44.
- a cladding layer 48 is formed so as to cover the core 46.
- a cladding layer 48 is formed so as to cover the core 46.
- two or more indenters pressed at predetermined intervals against a film made of the core material are moved in the same direction to form a stripe-shaped influential residual portion on the film, and then the quartz substrate 44 is etched. It can be formed by processing (see Fig. 2).
- the frustum-shaped protrusions 52 having a square bottom are arranged regularly and horizontally (FIG. 9A), or the frustum-shaped protrusions 54 having a strip-shaped bottom are formed. Side by side (Fig. 9B). If the substrate is made of glass and the projections 52 and 54 partially having a thin film are formed (see FIG. 3), the projections can also have a filter function. All the projections may be made of the substrate material (see Fig. 4). These microprisms can exhibit functions such as limiting the emission angle and deflecting re-emitted light.
- concave portions and grooves 62 are formed so as to enable various chemical operations (FIG. 1OA).
- Groove 6 2 is extremely ⁇
- FIG. 10B an example of a method for manufacturing a chip combined with a lithography technique is shown (FIG. 10B).
- a thin film 72 made of a material that is chemically stable to a solution or the like to be used is formed on a substrate 70, and a resist 74 having an opening at a portion corresponding to a groove or the like is formed on the thin film 72.
- the indenter 76 is pressed into the opening area defined by the resist 74 to form an affected residual portion 78 having a reduced etching rate in the thin film 72.
- the opening region is etched to form the groove 62, and at the same time, the convex portion 64 is formed.
- the method of the present invention can be applied to the production of various micro devices such as diffraction gratings, Fresnel lenses, and photonic crystals.
- Example 1 diffraction gratings, Fresnel lenses, and photonic crystals.
- a quartz glass substrate to form a S i 0 2 / AI 2 0 3 film by sputtering Conditions of the sputtering method, A r flow 3. 3 X 1 0- 7 m 3 / s (2 0 ccm), 0 2 flow ⁇ ⁇ 1 0- Tm s / s (6 ccm) v deposition time between 3 0 Minutes.
- etching was performed at 50 ° C. for 5 minutes.
- the etching amount was 170 nm in a region where there was no influence of the pressing by the indenter.
- a trapezoidal projection was formed at the position of the processing mark.
- the height of this projection was 18.7 nm
- the diameter at the top of the projection was about 20 ⁇ m
- the diameter at the bottom was about 25 m.
- the amount of etching at the position of this additional mark was 91.3 nm, and it can be seen that the etching rate was reduced to about 54% by the pressing of the indenter.
- An uneven surface was formed in the same manner as in Example 1, except that an aluminosilicate glass substrate was used instead of the quartz glass substrate, and the etching amount in a region where the pressure was not affected was 800 nm.
- a convex portion having a substantially trapezoidal cross section was formed, the lower portion being made of a substrate material and the upper portion being made of a thin film material.
- the height of the projection was 700 nm, and the diameter of the bottom was about 25 tm.
- Example 3 An uneven surface was formed in the same manner as in Example 3 except that the indenter to which the load was applied was moved.
- the indenter first repeated 10 operations of sweeping about 2 mm in a predetermined direction while applying a load of about 3 OmN, thereby forming ⁇ 0 lines of processing marks parallel to each other.
- the interval between the filaments was 150 tm.
- the same sweeping operation is repeated 10 times in the direction orthogonal to the predetermined direction, A linear group of processing traces intersecting in a shape was formed.
- the unevenness is formed by utilizing the difference in the etching rate of the thin film. Therefore, in the method of forming the uneven surface using the above difference, the degree of freedom in selecting the substrate material is limited. Higher than. INDUSTRIAL APPLICABILITY The present invention has great utility as a method for efficiently manufacturing optical devices, microchemical chips, and the like.
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- Organic Chemistry (AREA)
- Geochemistry & Mineralogy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Nanotechnology (AREA)
- Analytical Chemistry (AREA)
- Mechanical Engineering (AREA)
- Surface Treatment Of Glass (AREA)
- Weting (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005503009A JP4346606B2 (ja) | 2003-03-03 | 2004-02-20 | 凹凸のある表面を有する物品の製造方法 |
EP04713216A EP1614665A4 (en) | 2003-03-03 | 2004-02-20 | METHOD FOR PRODUCING AN OBJECT WITH SAVING AND PROGRESS |
US10/993,587 US7407889B2 (en) | 2003-03-03 | 2004-11-19 | Method of manufacturing article having uneven surface |
Applications Claiming Priority (2)
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JP2003-056171 | 2003-03-03 | ||
JP2003056171 | 2003-03-03 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/993,587 Continuation US7407889B2 (en) | 2003-03-03 | 2004-11-19 | Method of manufacturing article having uneven surface |
Publications (1)
Publication Number | Publication Date |
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WO2004078668A1 true WO2004078668A1 (ja) | 2004-09-16 |
Family
ID=32958687
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/JP2004/002020 WO2004078668A1 (ja) | 2003-03-03 | 2004-02-20 | 凹凸のある表面を有する物品の製造方法 |
Country Status (3)
Country | Link |
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EP (1) | EP1614665A4 (ja) |
JP (1) | JP4346606B2 (ja) |
WO (1) | WO2004078668A1 (ja) |
Cited By (6)
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JP2007224601A (ja) * | 2006-02-23 | 2007-09-06 | Daishi Densetsu Kk | 発光機能付き手摺装置及び発光機能付き幅木装置 |
JP2008296037A (ja) * | 2006-07-04 | 2008-12-11 | Toppan Printing Co Ltd | マイクロニードルの製造方法 |
JP2009509104A (ja) * | 2005-09-16 | 2009-03-05 | インテグリス・インコーポレーテッド | 偏向した湿潤面を備えた流体取扱装置 |
JP2009045312A (ja) * | 2007-08-22 | 2009-03-05 | Toppan Printing Co Ltd | 針状体の作製方法ならびに製造方法及び針状体 |
JPWO2007061018A1 (ja) * | 2005-11-22 | 2009-05-07 | オリンパス株式会社 | ガラス基材の加工方法およびガラス部品 |
WO2017104398A1 (ja) * | 2015-12-17 | 2017-06-22 | 株式会社日立ハイテクノロジーズ | 生体分子測定装置 |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
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FR2915814A1 (fr) * | 2007-05-04 | 2008-11-07 | Saint Gobain | Extracteur de lumiere nanostructure |
FR2924425B1 (fr) * | 2007-12-03 | 2011-06-17 | Centre Nat Rech Scient | Procede pour realiser une micro gravure a la surface d'un materiau |
KR20180016407A (ko) * | 2015-05-15 | 2018-02-14 | 코닝 인코포레이티드 | 광 추출 피쳐들을 포함하는 유리 제품 및 그 제조 방법 |
US10410883B2 (en) | 2016-06-01 | 2019-09-10 | Corning Incorporated | Articles and methods of forming vias in substrates |
US10794679B2 (en) | 2016-06-29 | 2020-10-06 | Corning Incorporated | Method and system for measuring geometric parameters of through holes |
US11078112B2 (en) | 2017-05-25 | 2021-08-03 | Corning Incorporated | Silica-containing substrates with vias having an axially variable sidewall taper and methods for forming the same |
US10580725B2 (en) | 2017-05-25 | 2020-03-03 | Corning Incorporated | Articles having vias with geometry attributes and methods for fabricating the same |
WO2019079417A2 (en) * | 2017-10-20 | 2019-04-25 | Corning Incorporated | METHODS FOR LASER PROCESSING OF TRANSPARENT PARTS USING PULSED LASER BEAM FOCAL LINES AND CHEMICAL ETCHING SOLUTIONS |
US11554984B2 (en) | 2018-02-22 | 2023-01-17 | Corning Incorporated | Alkali-free borosilicate glasses with low post-HF etch roughness |
CN116547247A (zh) | 2020-09-04 | 2023-08-04 | 康宁股份有限公司 | 纹理化玻璃制品及其制造方法 |
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DE19719133C2 (de) * | 1997-05-07 | 1999-09-02 | Heraeus Quarzglas | Glocke aus Quarzglas und Verfahren für ihre Herstellung |
JP3821069B2 (ja) * | 2002-08-01 | 2006-09-13 | 株式会社日立製作所 | 転写パターンによる構造体の形成方法 |
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- 2004-02-20 JP JP2005503009A patent/JP4346606B2/ja not_active Expired - Fee Related
- 2004-02-20 EP EP04713216A patent/EP1614665A4/en not_active Withdrawn
- 2004-02-20 WO PCT/JP2004/002020 patent/WO2004078668A1/ja active Application Filing
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JPH0680443A (ja) * | 1992-08-28 | 1994-03-22 | Ricoh Co Ltd | ガラス光学素子の製造方法 |
JPH09309744A (ja) * | 1996-05-24 | 1997-12-02 | Agency Of Ind Science & Technol | ガラスの光微細加工方法 |
JP2001272505A (ja) * | 2000-03-24 | 2001-10-05 | Japan Science & Technology Corp | 表面処理方法 |
JP2002160943A (ja) * | 2000-09-13 | 2002-06-04 | Nippon Sheet Glass Co Ltd | 非晶質材料の加工方法及びガラス基板 |
JP2003073145A (ja) * | 2001-09-04 | 2003-03-12 | Nippon Sheet Glass Co Ltd | ガラス基材の微細加工方法、微細加工用ガラス基材及び微細加工ガラス製品 |
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Cited By (18)
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JP2009509104A (ja) * | 2005-09-16 | 2009-03-05 | インテグリス・インコーポレーテッド | 偏向した湿潤面を備えた流体取扱装置 |
JP4708428B2 (ja) * | 2005-11-22 | 2011-06-22 | オリンパス株式会社 | ガラス基材の加工方法 |
US8307672B2 (en) | 2005-11-22 | 2012-11-13 | Olympus Corporation | Glass substrate processing method and glass component |
JPWO2007061018A1 (ja) * | 2005-11-22 | 2009-05-07 | オリンパス株式会社 | ガラス基材の加工方法およびガラス部品 |
JP2007224601A (ja) * | 2006-02-23 | 2007-09-06 | Daishi Densetsu Kk | 発光機能付き手摺装置及び発光機能付き幅木装置 |
US8377364B2 (en) | 2006-07-04 | 2013-02-19 | Toppan Printing Co., Ltd. | Method of manufacturing microneedle |
JPWO2008004597A1 (ja) * | 2006-07-04 | 2009-12-03 | 凸版印刷株式会社 | マイクロニードルの製造方法 |
JP2008296037A (ja) * | 2006-07-04 | 2008-12-11 | Toppan Printing Co Ltd | マイクロニードルの製造方法 |
JP2013165975A (ja) * | 2006-07-04 | 2013-08-29 | Toppan Printing Co Ltd | マイクロニードルの製造方法 |
US9238384B2 (en) | 2006-07-04 | 2016-01-19 | Toppan Printing Co., Ltd. | Method of manufacturing microneedle |
JP2009045312A (ja) * | 2007-08-22 | 2009-03-05 | Toppan Printing Co Ltd | 針状体の作製方法ならびに製造方法及び針状体 |
WO2017104398A1 (ja) * | 2015-12-17 | 2017-06-22 | 株式会社日立ハイテクノロジーズ | 生体分子測定装置 |
CN108368466A (zh) * | 2015-12-17 | 2018-08-03 | 株式会社日立高新技术 | 生物体分子测定装置 |
JPWO2017104398A1 (ja) * | 2015-12-17 | 2018-08-30 | 株式会社日立ハイテクノロジーズ | 生体分子測定装置 |
GB2560668A (en) * | 2015-12-17 | 2018-09-19 | Hitachi High Tech Corp | Biomolecule measurement apparatus |
US10753922B2 (en) | 2015-12-17 | 2020-08-25 | Hitachi High-Tech Corporation | Biomolecule measurement apparatus |
GB2560668B (en) * | 2015-12-17 | 2022-08-24 | Hitachi High Tech Corp | Biomolecule measurement apparatus |
CN108368466B (zh) * | 2015-12-17 | 2022-09-02 | 株式会社日立高新技术 | 生物体分子测定装置 |
Also Published As
Publication number | Publication date |
---|---|
EP1614665A1 (en) | 2006-01-11 |
JPWO2004078668A1 (ja) | 2006-06-08 |
JP4346606B2 (ja) | 2009-10-21 |
EP1614665A4 (en) | 2010-04-21 |
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