CN107895682A - 具有流通源的腔室 - Google Patents

具有流通源的腔室 Download PDF

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CN107895682A
CN107895682A CN201710831886.8A CN201710831886A CN107895682A CN 107895682 A CN107895682 A CN 107895682A CN 201710831886 A CN201710831886 A CN 201710831886A CN 107895682 A CN107895682 A CN 107895682A
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D·卢博米尔斯基
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Applied Materials Inc
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Abstract

本申请公开了具有流通源的腔室。所描述的处理腔室可以包括腔室外壳，腔室外壳至少部分地限定半导体处理腔室的内部区域。腔室可以包括定位在腔室外壳内的喷头，并且喷头可至少部分地将内部区域划分为远程区域和处理区域，在处理区域能包含基板。腔室也可包括定位在喷头与处理区域之间的电感耦合的等离子体源。电感耦合的等离子体源可以包括在电介质材料内的导电材料。

Description

具有流通源的腔室
技术领域
本申请主张2016年10月4日提交的美国专利申请第15/285,176号的权益，所述美国专利申请的全部公开内容出于全部目的以引用的方式并入本文。
本技术涉及半导体系统、工艺和设备。更特定地，本技术涉及在腔室内可包括电感耦合的等离子体源的处理腔室。
背景技术
集成电路可能通过在基板表面上产生复杂图案化材料层的工艺而制成。在基板上产生图案化材料需要用于将暴露材料移除的受控制的方法。化学蚀刻用于各种目的，包括将光刻胶中的图案转移至下层、使层变薄或使已存在于表面上的特征的横向尺度变薄。通常期望具有相较另一材料而更快地蚀刻一种材料以促进例如图案转移工艺的蚀刻工艺。此蚀刻工艺被称为对第一材料具有选择性。由于材料、电路和工艺的多样性，已开发了对各种材料具有选择性的蚀刻工艺。
蚀刻工艺可基于工艺中使用的材料而称为湿法或干法。湿法HF蚀刻相比其他电介质和材料优先蚀刻氧化硅。然而，湿法工艺可能难以穿透一些受约束的沟槽，并且有时还可能使剩余材料变形。在基板处理区域内形成的局部等离子体中产生的干法蚀刻可以穿透更多受约束的沟槽并呈现脆弱的剩余结构的更少变形。然而，局部等离子体会通过产生电弧而在电弧放电时破坏基板。
因此，需要可用于产生高质量器件和结构的改进的系统和方法。这些需要和其他需要通过本技术解决。
发明内容
本技术的半导体处理系统和方法可以包括半导体处理腔室，半导体处理腔室包括腔室外壳，腔室外壳至少部分地限定半导体处理腔室的内部区域。腔室可以包括定位在腔室外壳内的喷头，并且喷头可至少部分地将内部区域划分为远程区域和处理区域，在处理区域中能包含基板。腔室也可包括定位在喷头与处理区域之间的电感耦合的等离子体源。电感耦合的等离子体源可以包括电介质材料内的导电材料。
在实施例中，电介质材料可以选自由氧化铝、氧化钇、单晶硅和石英组成的组。另外，导电材料可以包括铜管，铜管配置成接收在管内流动的流体。电介质材料可以限定通过电感耦合的等离子体源的孔。在一些实施例中，导电材料可以围绕在电介质材料内的孔定位。孔可跨电介质材料、围绕导电材料、以均匀的图案被包括。在一些实施例中，导电材料可以在电介质材料内以平面螺旋图案来配置。在其他实施例中，导电材料能以线圈来配置，所述线圈在所述电介质材料内竖直延伸达所述导电材料的至少两个整匝。
在示例性等离子体源中，导电材料可以包括定位在电感耦合的源内的两个导电管。第一管能以第一配置被包括在电感耦合的源内，并且第二管能以第二配置被包括在电感耦合的源内。在一些实施例中，第二配置可以相对于第一配置径向地向内。第一配置和第二配置各自可以是在电介质材料内竖直延伸的卷绕配置。在其他实施例中，第一配置和第二配置各自可以是在电感耦合的源的相同平面内的平面配置。第一管和第二管可以与RF源耦合，并且在一些实施例中，第一管和第二管各自可以通过电容性分压器与RF源耦合。另外，在一些实施例中，电感耦合的源可以包括耦合在一起的至少两个板。至少两个板中的每个板可以限定通道的至少一部分，并且导电材料可以容纳在至少部分地由至少两个板中的每个板限定的通道内。
本技术也涵盖电感耦合的等离子体源。示例性源可以包括第一板，所述第一板限定第一板内的通道的至少一部分。第一板可包括例如电介质材料。示例性源也可包括安置在通道的至少一部分内的导电材料。在一些实施例中，导电材料的特征为螺旋或线圈配置。此外，导电材料可与RF源耦合并且配置成跨所述源生成等离子体。
在一些示例性源中，第一板可以限定通过所述第一板的孔，并且每个孔的中心轴线可垂直于通道的至少一部分。在实施例中，源的特征为至少三英寸的厚度。第一板可以限定第一通道的至少一部分和第二通道的至少一部分，在实施例中。导电材料可以至少包括安置在第一通道的至少一部分内的第一导电材料和安置在第二通道的至少一部分内的第二导电材料。示例性源可进一步包括与第一板耦合的第二板，从而封闭在第一板与第二板之间的导电材料。在实施例中，第二板可以限定第二孔，所述第二孔与通过第一板限定的孔轴向对准。
本技术还包括半导体处理腔室。示例性腔室可以包括腔室外壳，腔室外壳至少部分地限定半导体处理腔室的内部区域。腔室外壳可以包括盖组件，盖组件包括用于将前体接收到半导体处理腔室中的入口。腔室也可包括在半导体处理腔室的内部区域内的底座。腔室可以包括定位在腔室外壳内的喷头。在实施例中，喷头可以定位在盖组件与底座之间。另外，腔室可以包括定位在喷头与底座之间的电感耦合的等离子体源。电感耦合的等离子体源可以包括电介质材料内的导电材料。
此技术可提供优于常规系统和技术的多个益处。例如，根据本技术的电感性源可以减少来自电极的部件溅射。另外，本技术的等离子体源可以允许将等离子体离子能量与离子密度解耦。结合以下描述和附图更详细地描述这些和其他实施例以及许多它们的优点和特征。
附图说明
可通过参考本说明书的剩余部分和附图实现对所公开的技术的性质和优点的进一步理解。
图1示出了根据本技术的实施例的示例性处理系统的俯视平面图。
图2示出了根据本技术的实施例的示例性处理腔室的示意性截面图。
图3示出了根据所公开技术的实施例的示例性喷头的底视平面图。
图4示出了根据所公开技术的实施例的示例性面板的平面图。
图5示出了根据本技术的实施例的处理腔室的截面图。
图6示出了根据本技术的实施例的示例性等离子体源的平面图。
图7示出了根据本技术的实施例的图6的示例性等离子体源的截面图。
图8示出了根据本技术的实施例的示例性等离子体源的平面图。
图9示出了根据本技术的实施例的示例性等离子体源的平面图。
图10示出了根据本技术的实施例的处理腔室的截面图。
图11示出了根据本技术的实施例的示例性等离子体源的平面图。
图12示出了根据本技术的实施例的图11的示例性等离子体源的截面图。
图13示出了根据本技术的实施例的示例性方法的操作。
若干附图被包括为示图。应当理解，附图是出于说明性的目的，并且不应视为按比例的，除非专门声明是按比例的。另外，作为示图，提供附图以有助于理解，并且相比实际表示，附图可能无法包括所有的方面或信息，并且出于说明性的目的，附图可能包括额外或放大的材料。
在附图中，类似部件和/或特征可具有相同的参考标记。另外，相同类型的各个部件可用参考标记后加在类似部件之间进行区分的字母来区分。如果在本说明书中仅使用了第一参考标记，则无论字母如何，描述可适用于具有相同第一参考标记的类似部件中的任意一个。
具体实施方式
本技术包括用于半导体处理的系统和部件，所述半导体处理包括经调谐的蚀刻工艺。某些可用的处理腔室可包括多个等离子体机构，诸如，在晶片层级处的等离子体机构以及远程等离子体源。晶片层级的等离子体通常可经由在两个电极之间形成的电容耦合的等离子体而形成。这些电极中的一个或两个可以是或可包括额外的腔室部件，诸如，喷头、底座或腔室壁。然而，甚至在相对低水平的等离子体功率和腔室压力下(诸如，在20mTorr下的50W功率)，在电极上的感应电压可能是数百伏。这会导致电极本身溅射，这可能将所溅射的颗粒材料引至晶片上。这些颗粒无法实现跨晶片均匀性，并且会沉积导电材料，所述导电材料会导致最后产生的电路的短路。
常规技术可能已经通过老炼具有聚合物涂层(诸如，含碳涂层或含硅涂层)的腔室部件来解决这个溅射问题。此类聚合物层可用作电容耦合的源电极的表面上的钝化层。然而，此类涂层可能难以将均匀性应用至喷头或部件，可能不具有完整的覆盖，并且仍可能随时间降解，从而导致聚合材料在晶片上沉积。
本技术可通过采用腔室自身内的电感耦合的等离子体(“ICP”)源来克服这些问题。ICP源可产生远低于相同功率的电容耦合的等离子体源的电压，这可至少部分地解决电极溅射。另外，因为ICP源与电容耦合源的两个板不同地操作，根据本技术的等离子体离子密度和离子能量可在示例性腔室中解耦。这可允许相对于常规技术的改进的等离子体调谐和特征修改。
尽管剩余公开内容将会按部就班地标识利用所公开技术的具体蚀刻工艺，但是将容易理解的是，系统和方法可等效地适用于可在所描述的腔室中发生的沉积和清洁工艺。相应地，本技术不应视为如此限制为仅与蚀刻工艺一起使用。
图1示出了根据实施例的沉积、蚀刻、烘烤和固化腔室的处理系统100的一个实施例的俯视平面图。图1所描绘的处理工具100可包含多个工艺腔室114A-D、传送腔室110、保养腔室116、集成度量腔室117和一对负载锁定腔室106A-B。工艺腔室可包括与相对于图2所描述的那些类似的结构或部件，以及额外的处理腔室。
为了在腔室中输送基板，传送腔室110可包含机器人输送机构113。输送机构113可具有分别附接至可延伸臂113B的远端的一对基板输送叶片113A。叶片113A可用于将单独的基板运载至工艺腔室并且从工艺腔室运载独立基板。在操作中，基板输送叶片中的一个(诸如，输送机构113的叶片113A)可从负载锁定腔室(诸如，腔室106A-B)中的一个取回基板W，并且将基板W运载至第一处理阶段，例如，在腔室114A-D中如下文所述的蚀刻工艺。如果腔室已被占用，那么机器人可等待直至处理完成，并且随后使用一个叶片113A从腔室移除已处理的基板，并且可使用第二叶片(未示出)插入新的基板。一旦已处理了基板，所述基板随后可移动至第二处理阶段。针对每次移动，输送机构113通常可具有运载基板的一个叶片和用于执行基板交换的一个空的叶片。输送机构113可以在每个腔室处等待直至可实现交换。
一旦在工艺腔室内完成处理，输送机构113可从最后的工艺腔室移动基板W，并将基板W输送至负载锁定腔室106A-B内的盒。基板可从负载锁定腔室106A-B移动至工厂接口104中。工厂接口104一般可操作以在大气压清洁环境中的装载箱105A-D与负载锁定腔室106A-B之间传送基板。工厂接口104中的清洁环境一般可通过空气过滤工艺(诸如，HEPA过滤)来提供。工厂接口104也可包括可用于在处理之前适当地对准基板的基板定向器/对准器(未示出)。至少一个基板机器人(诸如，机器人108A-B)可定位在工厂接口104中，以便在工厂接口104内的各个位置/地方之间输送基板，并且输送至与其连通的其他地方。机器人108A-B可配置成沿在壳体104内的轨道系统从工厂接口104的第一端行进至第二端。
处理系统100可进一步包括集成度量腔室117以提供控制信号，控制信号可提供对在处理腔室中执行的工艺中的任一个的自适应控制。集成度量腔室117可包括各种度量装置中的任一个以测量各种膜性质(诸如，厚度、粗糙度、组成)，并且度量装置可进一步能够以自动方式表征光栅参数(诸如，在真空下的临界尺度、侧壁角度和特征高度)。
现在转到图2，图2示出了根据本技术的示例性工艺腔室系统200的截面。腔室200可例如用于先前所论述的系统100的处理腔室部分114中的一个或多个中。一般来说，蚀刻腔室200可包括用于实现离子研磨操作的第一电容耦合的等离子体源和用于实现蚀刻操作并实现任选的沉积操作的第二电容耦合的等离子体源。在下文进一步解释的实施例中，腔室可进一步包括用于执行额外的离子蚀刻操作的电感耦合的等离子体源。腔室200可包括围绕卡盘250的接地腔室壁240。在实施例中，卡盘250可以是静电卡盘，静电卡盘在处理期间将基板202夹持至卡盘250的顶表面，但是也可采用已知的其他夹持机构。卡盘250可包括嵌入式热交换器线圈217。在示例性实施例中，热交换器线圈217包括一个或多个热传递流体通道，热传递流体(诸如，乙二醇/水混合物)可通过热传递流体通道传递，以控制卡盘250的温度，并且最终控制基板202的温度。
卡盘250可包括耦合至高压DC电源248的网筛249，使得网筛249可运载DC偏置电位以实现对基板202的静电夹持。卡盘250可与第一RF功率源耦合，并且在一个这种实施例中，网筛249可与第一RF功率源耦合，使得DC电压偏移和RF电压电位两者跨卡盘250的顶表面上的薄电介质层耦合。在说明性实施例中，第一RF功率源可包括第一RF发生器252和第二RF发生器253。RF发生器252、253可以在任何工业上采用的频率下操作，然而在示例性实施例中，RF发生器252可以在60MHz下操作以提供有利的方向性。在也提供了第二RF发生器253的情况下，示例性频率可能是2MHz。
在卡盘250由RF供电的情况下，RF返回路径可由第一喷头225提供，第一喷头可包括双通道喷头。第一喷头225可设置在卡盘上方，以便将第一馈送气体分配至由第一喷头225和腔室壁240限定的第一腔室区域284中。由此，卡盘250和第一喷头225形成第一RF耦合电极对，以便在第一腔室区域284内电容性地激励第一馈送气体的第一等离子体270。源自RF供电的卡盘的电容耦合的DC等离子体偏置或RF偏置可产生从第一等离子体270至基板202的离子通量(例如，Ar离子，其中第一馈送气体是Ar)，从而提供离子研磨等离子体。第一喷头225可接地或替代地与RF源228耦合，RF源具有在与卡盘250的频率不同的频率(例如，13.56MHz或60MHz)下可操作的一个或多个发生器。在所示的实施例中，第一喷头225可选择地通过继电器227耦合至地面或RF源228，继电器在蚀刻工艺期间可自动地受控，例如，通过控制器(未示出)。在所公开的实施例中，腔室200可不包括喷头225或电介质间隔件220，并且可替代地仅包括下文进一步描述的挡板215和喷头210。
如在附图中进一步示出，蚀刻腔室200可包括能够在低工艺压力下具有高吞吐量的泵堆叠。在实施例中，至少一个涡轮分子泵265、266可通过一个或多个闸阀260与第一腔室区域284耦合，并且设置在卡盘250下方，与第一喷头225相对。涡轮分子泵265、266可以是具有适当吞吐量的任何市售泵，并且更特定地可适当地调整大小以在第一馈送气体的期望流率(例如，50至500sccm Ar，其中氩气是第一馈送气体)下将工艺压力维持为低于10mTorr或约10mTorr或者维持为低于5mTorr或约5mTorr。在所示的实施例中，卡盘250可形成在两个涡轮泵256与266之间居中的底座的部分，然而，在替代配置中，卡盘250可在从腔室壁240悬挂的底座上，所述腔室壁具有单个涡轮分子泵，所述涡轮分子泵具有与卡盘250的中心对准的中心。
设置在第一喷头225上方的可以是第二喷头210。在一个实施例中，在处理期间，第一馈送气体源(例如，从气体分配系统290递送的氩气)可与气体入口276耦合，并且第一馈送气体流过延伸通过第二喷头210的多个孔280、进入第二腔室区域281中，并且通过延伸通过第一喷头225的多个孔282而进入第一腔室区域284中。额外的流分配器或具有孔278的挡板214可通过分配区域218来进一步跨蚀刻腔室200的直径分配第一馈送气体流216。在替代实施例中，第一馈送气体可经由孔283直接流入第一腔室区域284中，所述孔如由虚线223指示与第二腔室区域281隔离。
腔室200可额外地从所示的状态重新配置以执行蚀刻操作。次级电极205可设置在第一喷头225上方，其间具有第二腔室区域281。次级电极205可进一步形成蚀刻腔室200的盖或顶板。次级电极205可与第一喷头225通过电介质环220电气隔离，并且形成第二RF耦合电极对以在第二腔室区域281内使第二馈送气体的第二等离子体292电容性放电。有利地，第二等离子体292可以不在卡盘250上提供显著的RF偏置电位。第二RF耦合电极对中的至少一个电极可与RF源耦合以用于激励蚀刻等离子体。次级电极205可与第二喷头210电气耦合。在示例性实施例中，第一喷头225可与接地面耦合或浮置，并且可通过继电器227耦合至地面，从而在操作的离子研磨模式期间允许第一喷头225也由RF功率源228供电。在第一喷头225接地的情况下，具有在例如13.56MHz或60MHz下操作的一个或多个RF发生器的RF功率源208，可通过继电器207与次级电极205耦合，这可允许次级电极205在其他操作模式期间(诸如，在离子研磨操作期间)也接地，但是如果对第一喷头225供电，那么次级电极205也可保持浮置。
第二馈送气体源(诸如，三氟化氮)和氢源(诸如，氨)可从气体分配系统290递送，并且与气体入口276耦合，诸如，经由虚线224。在此模式中，第二馈送气体可流过第二喷头210，并且可在第二腔室区域281中被激励。反应物质随后可被传递至第一腔室区域284中以与基板202反应。如进一步示出，针对其中第一喷头225是多通道喷头的实施例，可提供一种或多种馈送气体以与由第二等离子体292生成的反应物质反应。在一个此类实施例中，水源可与多个孔283耦合。额外的配置也可基于所提供的一般说明，但是具有重新配置的各种部件。例如，流分配器或挡板215可以是与第二喷头210类似的板，并且可定位在次级电极205与第二喷头210之间。
由于这些板中的任一个在各种配置中可作为电极操作以产生等离子体，因此一个或多个环形或其他形状的间隔件可定位这些部件中的一个或多个之间，类似于电介质环220。第二喷头210在实施例中也可作为离子抑制板进行操作，并且可配置成减少、限制或抑制离子物质流过第二喷头210，同时仍允许中性和自由基物质流动。一个或多个额外的喷头或分配器可包括在第一喷头225与卡盘250之间的腔室中。此类喷头可采取先前所描述的分配板或结构中的任一个的形状或结构。此外，在实施例中，远程等离子体单元(未示出)可与气体入口耦合以将等离子体流出物提供至腔室，从而用于各种工艺。
在实施例中，卡盘250在垂直于第一喷头225的方向上沿距离H2可以是可移动的。卡盘250可能在由波纹管255等围绕的经致动的机构上，以允许卡盘250移动至更靠近第一喷头225或更远离第一喷头，作为控制卡盘250与第一喷头225之间的热传递的手段，第一喷头225可处于80℃-150℃或更高的升高的温度。由此，蚀刻工艺可通过相对于第一喷头225在第一预定位置与第二预定位置之间移动卡盘250来实现。或者，卡盘250可包括升降器251以将基板202从卡盘250的顶表面抬离距离H1，从而在蚀刻工艺期间控制通过第一喷头225进行的加热。在其他实施例中，在蚀刻工艺在固定温度(诸如，约90-110℃)下执行的情况下，可避免卡盘移位机构。系统控制器(未示出)可在蚀刻工艺期间通过自动地交替对第一RF耦合电极和第二RF耦合电极对供电来交替地激励第一等离子体270和第二等离子体292。
腔室200也可经重新配置以执行沉积操作。等离子体292可在第二腔室区域281中通过RF放电来生成，RF放电能以针对第二等离子体292所描述的任何方式来实现。在向第一喷头225供电以在沉积期间生成等离子体292的情况下，第一喷头225可通过电介质间隔件230与接地腔室壁240隔离，以便相对于腔室壁而电气浮置。在示例性实施例中，氧化剂馈送气体源(诸如，分子氧)可从气体分配系统290递送，并且与气体入口276耦合。在第一喷头225是多通道喷头的实施例中，任何含硅前体(诸如，OMCTS)可从气体分配系统290递送，并且被引导至第一腔室区域284中，以便与从等离子体292通过第一喷头225的反应物质反应。替代地，也可使含硅前体连同氧化剂流过气体入口276。腔室200被包括为可用于参照本技术所讨论的各种操作的一般腔室配置。
图3是根据实施例的、与处理腔室一起使用的喷头325的底视图。喷头325可与图2所示的喷头225对应。可作为第一流体通道或孔282的视图的通孔365可具有多个形状和配置，以控制并影响前体通过喷头225的流动。可作为第二流体通道或孔283的视图的小孔375可基本上均匀地分布在喷头的表面上方(甚至在通孔365之间)，并且在前体离开喷头时，可提供比其他配置更均匀的对前体的混合。
图4示出了根据实施例的用于面板的布置。如图所示，面板400可包括多孔板或歧管。面板的组件可与图3所示的喷头类似，或者可包括专门为前体气体的分布图案配置的设计。面板400可包括环形框架410，所述框架定位在示例性处理腔室(诸如，图2所示的腔室)内的各种布置中。可在框架上或在框架内耦合板420，在实施例中所述板可与如下描述的离子抑制器板523类似。在实施例中，面板400可以是单片设计，其中框架410和板420是单片材料。
板可具有圆盘形状，并且被安置在框架410上或在框架410内。板可以是导电材料(诸如，包括铝的金属)以及允许板用作供在先前描述的等离子体布置中使用的电极的其他导电材料。板可以具有各种厚度，并且可包括限定在板内的多个孔465。如图4所示的示例性布置可包括如先前参考图3的布置所描述的图案，并且可包括以几何图案(诸如，所示的六边形)形式的孔的一系列环。如应当理解，所示的图案是示例性的；并且应当理解，各种图案、孔布置和孔间隔涵盖在设计中。
孔465可调整大小或以其他方式配置以在操作期间允许流体流过孔。在各个实施例中，孔可调整大小为小于约2英寸，并且可小于或约1.5英寸、约1英寸、约0.9英寸、约0.8英寸、约0.75英寸、约0.7英寸、约0.65英寸、约0.6英寸、约0.55英寸、约0.5英寸、约0.45英寸、约0.4英寸、约0.35英寸、约0.3英寸、约0.25英寸、约0.2英寸、约0.15英寸、约0.1英寸、约0.05英寸、约0.04英寸、约0.0.35英寸、约0.03英寸、约0.025英寸、约0.02英寸、约0.015英寸、约0.01英寸等，或更小。
在一些实施例中，面板400可作为离子抑制器操作，所述离子抑制器限定遍及结构的多个孔，这些孔配置成抑制带离子电荷的物质迁移出腔室等离子体区域，同时允许不带电荷的中性或自由基物质通过离子抑制器而至离子抑制器下游的活性气体递送区域中。在实施例中，离子抑制器可以是具有各种孔配置的多孔板。这些不带电荷的物质可包括高度反应性物质，以较少的反应性载气输送所述高度反应性物质通过孔。如上文提及，离子物质通过孔的迁移可被减少，并且在一些实例中可完全被抑制。例如，可控制孔的长宽比、或孔直径与长度和/或孔的几何形状，使得通过离子抑制器的活性气体中的带离子电荷的物质的流动减少。
转到图5，图5示出了根据本技术的处理系统500的简化示意图。系统500的腔室可包括先前相对于图2至图4所讨论的部件中的任一个，并且可配置成在腔室的处理区域533中容纳半导体基板555。腔室外壳503可至少部分地限定腔室的内部区域。例如，腔室外壳503可包括盖502，并且可至少部分地包括在图中示出的其他板或部件中的任一个。例如，腔室部件可作为一系列堆叠的部件被包括，其中每个部件至少部分地限定腔室外壳503的一部分。基板555可位于如图所示的底座565上。处理腔室500可包括与入口501耦合的远程等离子体单元(未示出)。在其他实施例中，系统可不包括远程等离子体单元。
在具有或不具有远程等离子体单元的情况下，系统可配置成通过入口501来接收前体或其他流体，所述入口可提供到处理腔室的混合区域511的通路。混合区域511可与腔室的处理器区域533分离，并且可与腔室的处理腔室533流体地耦合。混合区域511可由系统500的腔室的顶部(诸如，腔室盖502或盖组件)至少部分地限定，所述盖组件可包括用于一个或多个前体的入口组件和分配装置，诸如，下文的面板509。在所公开的实施例中，面板509可与图4示出的喷头或面板类似。面板509可包括多个通道或孔507，所述多个通道或孔507可在通过腔室进行之前经定位和/或定形状以影响前体在混合物区域511中的分布和/或驻留时间。
例如，可通过调整跨面板509的孔数量、孔大小、或孔配置来影响或控制复合。间隔件504(诸如，电介质材料环)可定位在腔室的顶部与面板509之间，以进一步限定混合区域511。另外，间隔件504可以是金属的以允许盖502与面板509电气耦合。另外，间隔件504可不被包括，并且盖502或面板509中的任一者能以延伸或凸起特征表征以分离两个板来限定混合区域511。如图所示，面板509可定位在腔室的混合区域511与处理区域533之间，并且面板509可配置成通过腔室500分配一种或多种前体。
系统500的腔室可包括可以任选地被包括在所公开的实施例中的一系列部件中的一个或多个。例如，尽管描述了面板509，但是在一些实施例中，腔室可能不包括此类面板。在所公开的实施例中，可经由系统的操作压力、腔室部件的布置、或前体的流动分布中的一个或多个来引导在混合物区域511中至少部分地混合的前体通过腔室。
额外的板或装置523可设置在面板509下方。板523可包括与面板509类似的设计，并且可具有与例如图4所示的布置类似的布置。间隔件510可定位在面板509与板523之间，并且可包括电介质材料，但是在实施例中也可包括允许面板509与板523电气耦合的导电材料。孔524可限定在板523中，并且可被分配并配置成影响离子物质通过板523的流动。例如，孔524可配置成至少部分地抑制朝向处理区域533引导的离子物质的流动，并且可允许板523作为如先前所描述的离子抑制器操作。孔524可具有包括如先前所讨论的通道的各种形状，并且在所公开的实施例中，可包括远离处理区域533向外延伸的锥形部分。
系统500的腔室任选地可进一步包括在腔室内的气体分配组件525。可在多个方面中与如先前所描述的双通道喷头类似的气体分配组件525可位于在处理区域533上方的腔室内，诸如，在处理区域533与盖502之间。气体分配组件525可配置成将第一前体和第二前体两者递送至腔室的处理区域533中。在实施例中，气体分配组件525可将腔室的内部区域至少部分地划分为远程区域和其中定位基板555的处理区域。尽管图5的示例性系统包括双通道喷头，但是应当理解，可采用替代的分配组件，所述替代的分配组件维持与通过入口501引入的物质流体地隔离的前体。例如，可采用多孔板和在板下面的管，但是其他配置能以降低的效率操作，或者不提供如所描述的双通道喷头那样的均匀处理。通过采用所公开的设计之一，可将在进入处理腔室533之前未由等离子体先前激发的前体引入处理区域533中，或者可引入前体以避免接触前体可与之反应的额外的前体。尽管未示出，但是额外的间隔件(诸如，环形间隔件)可定位在板523与喷头525之间以使板彼此隔离。在额外的前体可不被包括的实施例中，气体分配组件525可具有与先前所描述的部件中的任一个类似的设计，并且可包括与图4所示的面板类似的特性。
在实施例中，气体分配组件525可包括嵌入式加热器529，所述嵌入式加热器529可包括例如电阻式加热器或温度受控的流体。气体分配组件525可包括上部板和下部板。板可彼此耦合以在板之间限定容积527。板的耦合可以使得通过上部和下部板提供第一流体通道540并且通过下部板提供第二流体通道545。所形成的通道可配置成从容积527通过下部板提供流体通路，并且第一流体通道540可在板与第二流体通道545之间与容积527流体地隔离。容积527可以是通过气体分配组件525(诸如，先前所讨论的通道223)的侧面流体地可接取的。通道可与腔室中的通路耦合，所述腔室中的通路与腔室500的入口501分离。系统500的腔室也可包括腔室衬里535，所述腔室衬里可保护腔室壁免受例如等离子体流出物以及材料沉积。衬里可以是或可包括导电材料，并且在实施例中，可以是或可包括绝缘材料。
在一些实施例中，如先前所描述的等离子体可在先前所讨论的部件中的两个或更多个之间限定的腔室的区域中形成。例如，等离子体区域(诸如，第一等离子体区域515)可在面板509与板523之间形成。间隔件510可维持两个装置彼此电气隔离以允许形成等离子体场。面板509可以是带电荷的，同时板523可以接地或经DC偏置以在限定在板之间的区域内产生等离子体场。可另外涂覆或老炼板以使其间可能生成等离子体的部件的降解最小化。板可另外包括较不可能降解或受影响的组合物，包括陶瓷、金属氧化物或其他导电材料。
操作常规电容耦合等离子体(“CCP”)会使腔室部件降解，这可移除无意中分布在基板上的粒子。这些粒子会由于可提供跨半导体基板的短路的金属粒子而影响由这些基板形成的器件的性能。然而，在实施例中，所公开技术的CCP能以降低的或基本上降低的功率操作，并且可用于维持等离子体，而不是在等离子体区域内电离物质。在其他实施例中，可操作CCP以电离递送至区域中的前体。例如，CCP可以在低于或约1kW、500W、250W、100W、50W、20W、等或更低的功率水平下操作。此外，CCP可产生平坦等离子体分布，所述平坦的等离子体分布可在空间内提供均匀等离子体分布。由此，等离子体流出物的更均匀流动可向下游递送至腔室的处理区域。
系统500的腔室也可包括在腔室外壳内的额外的等离子体源。例如，在实施例中，等离子体源550可以是电感耦合等离子体(“ICP”)源。如图所示，ICP源550可被包括在气体分配组件525与底座565之间。ICP源550可定位在处理区域533上方，并且可至少部分地从上方限定处理区域533。在实施例中，ICP源可包括材料的组合，或者可以是单材料设计。作为组合，ICP源550可包括电材料554，所述导电材料554被包括在电介质材料552内或者包含在或容纳在电介质材料552内。在实施例中，电介质材料552可以是或可包括任何数量的电介质或绝缘材料。例如，电介质材料552可以是或可包括氧化铝、氧化钇、石英、单晶硅、或可在处理环境内起作用的任何其他绝缘材料。在ICP源550定位在处理区域附近或部分地限定处理区域的实施例中，一些材料可能未作为电介质材料552有效地操作。由于ICP源550可暴露于一种或多种前体或等离子体流出物，因此针对电介质材料552的材料选择可涉及ICP源将暴露于的前体或操作。
导电材料554可能是可运载电流的任何导电材料。导电材料554可包括固体材料或中空材料，诸如管。通过采用例如管，可使流体流过中空结构，这可有助于冷却在充电的源。在实施例中，导电材料554可配置成接收在管内流动的流体。流体可以例如是水，或者可以是在操作期间不阻止ICP源550起作用的任何其他流体。导电材料554可以是可在各种操作条件下有效地操作的任何导电材料。在一个非限定性示例中，导电材料554可以是铜，包括铜管，但是可使用其他导电材料，诸如，其他金属或导电非金属。导电材料554可被包括在如将在下文讨论的多个配置中。在一些配置中，导电材料可以是管，所述管可在电介质材料552内缠绕、螺旋或卷绕，并且因此可位于整个电介质材料552(包括例如任选的位置558)中。导电材料554可被包括在相对均匀或均匀配置中，以便例如跨ICP源550产生均匀等离子体。
如先前提及，ICP源550可定位在流体递送源下方，所述流体递送源诸如先前讨论的气体分配组件525以及其他扩散器、面板、或喷头。当在处理区域533上方或靠近晶片555定位时，可期望通过ICP源550的材料的均匀流动来提供跨晶片555的均匀工艺。因此，通过其他喷头的已通过腔室分配的气体在与ICP源550相互作用时可以是相对均匀的分布。相应地，在递送至处理区域中以用于与晶片555接触之前，ICP源550可作为喷头或甚至作为最后分配器操作。ICP源550可配置成维持前体和/或等离子体流出物通过腔室而至处理区域533中的均匀或相对均匀的流动。ICP源550的实施例可包括在电介质材料552中限定并且通过ICP源550的孔556。在下文详细讨论若干示例性配置。孔可与包含在电介质材料552内的导电材料554间隔开或可围绕所述导电材料554。在一些实施例中，孔556的方向可垂直于在电介质材料552内的导电材料554的方向。例如，孔556中的任何一个或多个的中心轴线可垂直于导电材料554的轴线(诸如，在ICP源550的入口处)，或垂直于在导电材料554内流体流动的方向，或垂直于在电介质材料552内限定的其中可安置导电材料554的通道的方向。
可维持ICP源550与气体分配组件525之间的距离以防止或减少在两个部件之间生成等离子体。在一些实施例中，气体分配组件525可接地，并且因此由于带电荷的ICP源550，气体分配组件525会导致来自ICP源550的电磁损失。相应地，可期望在两个部件之间的更远距离。然而，随着部件进一步间隔开，可能在两个部件之间的区域内点燃等离子体。相应地，在实施例中，在两个部件之间的距离可以小于或约1英寸以避免在两个部件之间点燃等离子体。在一些实施例中，在两个部件之间的距离可以小于或约0.9英寸、小于或约0.8英寸、小于或约0.7英寸、小于或约0.6英寸、小于或约0.5英寸、小于或约0.4英寸、小于或约0.3英寸、小于或约0.2英寸、小于或约0.1英寸、或更小，但是可在两个部件之间维持距离以确保在这两个部件之间的流动均匀性，所述两个部件可具有轴向对准或可彼此特定偏移的孔。
通过包括ICP源550(如图所示)，可产生相比利用电容耦合等离子体所产生的更低电压。在电容耦合等离子体中，在电极上感应的电压可与功率成正比，并且因此可甚至在降低的功率下生成高电压。例如，示例性电容性源可在约50W的相对低功率水平并且在约20mTorr的压力下操作，但是可在电容性源的板上感应300-400伏的电压。这可产生例如先前所讨论的溅射。在相同的频率下操作的电感耦合的等离子体源(诸如，ICP源550)可产生例如小于300伏的感应电压，并且可小于250伏、小于200伏、小于175伏、小于150伏、小于125伏、小于100伏、小于90伏、小于80伏、小于70伏、小于60伏、小于50伏，或较小，这取决于匝数和其他参数。
另外，采用ICP源550可提供相对于如先前参照图2所讨论的电容耦合源的额外优点。图2已示出根据本技术的示例性腔室设计，其中在区域270中产生电容耦合等离子体。电容耦合等离子体可采用两个电极，这两个电极可包括例如喷头以及晶片底座。因此，晶片层级的离子密度和离子能量被一起确定。利用ICP源，晶片层级的离子能量可与等离子体的离子密度解耦。例如，ICP源可采用天线以电离气体，并且可确定离子密度，所述离子密度可以是功率的函数。相应地，在特定功率下的ICP源可限定所产生的等离子体的离子密度。然而，系统仍可包括在底座中的RF电极，并且可采用接地源，诸如腔室壁。通过采用RF电极以及与限定离子密度的天线分离的电气接地，可通过在晶片层级的此RF偏置在晶片层级上单独地控制离子能量。相应地，本设计的实施例可通过采用ICP源来确定等离子体的离子密度并且随后在晶片或底座处使用RF偏置以控制离子能量来提供对工艺活动的额外控制和调谐。由此，本系统可产生高密度等离子体，并且也提供晶片层级的低能量，以便例如执行复杂晶片修改和离子蚀刻。
转到图6，图6示出了根据本技术的实施例的示例性ICP源600的平面图。如图所示，ICP源600可以是或可包括平面源，其中导电材料610在电介质材料620内以二维图案或基本上二维的图案来配置。导电材料610可在电介质材料620的外部区域处进入电介质材料620。导电材料610可基于通道而遵循图案，所述通道至少部分地在电介质材料620的表面内或跨电介质材料620的表面而限定。如图所示，导电材料610可在电介质材料620内以平面卷绕或螺旋图案配置。ICP源600可包括先前所描述的材料中的任一种，并且可并入先前或本公开内容中别处所讨论的示例性腔室中的任一个中。
螺旋可被包括以提供数匝导电材料610。例如，在示例性配置中，螺旋可包括至少约1匝，并且取决于例如导电材料或电介质材料的尺寸，可包括至少或约2匝、至少或约3匝、至少或约4匝、至少或约5匝、至少或约6匝、至少或约7匝、至少或约8匝或更多匝。另外，示例性ICP源可包括约1匝导电材料与约7匝导电材料之间，或约2匝与约4匝之间。导电材料610的部分610a可在电介质材料620内竖直地延伸，并且可垂直于导电材料610的平面线圈或螺旋配置而延伸。如将在下文解释，在实施例中，部分610a仍可包含在电介质材料620内。
导电材料610或ICP线圈的匝数可影响由ICP源提供的功率。例如，较高匝数的导电材料可将增加的功率提供至等离子体。然而，随着匝数继续增加，此优点会开始减弱。例如，随着匝数继续增加，线圈会开始补偿并诱发自感，或有效地抵制自身。相应地，通过将匝数减少至低于此类阈值、或使此效应最小化，并且提供用于足够功率的充分匝数，可建立平衡以提供可接受的ICP源。另外，导电材料610的配置可包括跨电介质材料620的类似覆盖以提供通过ICP源的更均匀的等离子体分布。
ICP源600也可包括通过如先前所描述的电介质材料620而限定的孔630。孔可配置成发展通过ICP源的流动分布的均匀性。在一些实施例中，孔630能以跨电介质材料620并围绕导电材料610以均匀的图案被包括。如图所示，孔630以与导电材料610类似的螺旋或卷绕图案被包括。由于孔630可使电介质材料620穿孔以提供流动通道，因此孔可不与导电材料一致地定位。尽管是以螺旋图案示出，但是孔可被包括在可包括提供通过ICP源的基本上均匀的流动分布的目标的额外或替代的配置中。
另外，孔630的数量可以是可变的，并且可能未由附图充分表示，针对孔的图案而言包括更多的孔。取决于ICP源600的大小和孔的尺度，在跨ICP源600的任何图案中的孔的数量可以是大于或等于10个孔、大于或等于50个孔、大于或等于100个孔、大于或等于500个孔、大于或等于1,000个孔、大于或等于5,000个孔、大于或等于10,000个孔、或更多。孔的数量也可以是在这些范围内的任何更小范围，或在被包括在这些范围内的任何两个数量之间。类似地，跨ICP源600，孔的尺度和几何形状可以是类似的，或者在孔与孔之间，孔的尺度和几何形状可以不同。
图7示出了根据本技术的实施例的图6的示例性ICP源600的截面图。如图所示，ICP源600可包括导电材料610，导电材料610被包括在电介质材料620内。电介质材料620也可限定通过ICP源600的孔630，并且孔可围绕或绕导电材料610而定位。如图所示，截面图将导电材料610的实施例示出为导电材料既进入电介质材料620又离开电介质材料620。导电材料610可在导电材料(诸如，铜管)的一段处与功率源(诸如，RF功率源710)耦合。另外，离开电介质材料620的导电材料610的端部可与电气接地720耦合。在其他实施例中，导电材料610可包括多个部分。为了包括导电材料610，图7示出了ICP源600在实施例中可厚于一英寸，并且在实施例中可在约0.5英寸与约3英寸之间、或在实施例中可在约1英寸与约2英寸之间。
图7示出了导电材料部分610a的额外视图，导电材料部分610a可垂直于导电材料的卷绕配置而延伸。如图所示，导电材料的部分610a可竖直地延伸，并且随后离开具有部分610b的电介质材料620。部分610b示出为是隐藏的，因为所述部分610b可能不与进入电介质材料620的部分一致，并且可能不与孔630中的任一个交叉。如图所示，除了从腔室延伸的柱状部分之外，导电材料610可完全封闭在电介质材料620内，源可定位在所述腔室中，并且在所述腔室中可与电源耦合。为了将导电材料610结合在电介质材料620内，可例如围绕导电材料铸造电介质材料。
在另一实施例中，电介质材料可包括多个板，每个板可包括导电材料610的一部分。例如，电介质材料可包括耦合在一起的至少两个板，诸如，以任选的板间隔物640、650示出。例如，如图所示，ICP源包括3个板，但是额外的源可包括1个或2个板以及多于3个的板。在实施例中，电介质材料620的每个板可限定通道的其中可安置导电材料的至少一部分。随后，导电材料可定位或安置在至少一个板内，并且随后第二板或额外的板可与第一板耦合以将导电材料封闭或容纳在电介质材料620板内并且在至少部分地由板中的每个板限定的通道内。尽管示出为在下部板内或在电介质材料620的下部具有导电材料的平面配置，但是应当理解，此配置可颠倒，其中线圈图案在电介质材料的上部处，并且在离开电介质材料620之前，部分610a从卷绕部分竖直向下延伸。
图8示出了根据本技术的实施例的另一示例性等离子体源800的平面图。等离子体源800可包括先前所讨论的部件或特性中的一些或全部。如图所示，等离子体源800可包括被包括在电介质或绝缘材料820中的导电材料810，如先前所描述。等离子体源800可包括先前所描述的材料或配置中的任一个，并且可并入先前讨论的或在本公开中别处讨论的示例性腔室中的任一个。电介质材料820可另外限定通过等离子体源800的多个孔830，所述孔830可围绕或环绕导电材料810定位。孔配置仅是示例性的，并且对孔的数量、大小、形状和位置的调整将理解为也被涵盖在内。导电材料810可以是如图8所示的完全平面的配置，并且可不包括在如例如图6至图7所示的平面配置上方或下方延伸的部分。在一些实施例中，电介质材料820也可包括彼此耦合的两个电介质板，所述电介质板各自限定通道的其中安置导电材料的至少一部分。
图9示出了根据本技术的实施例的另一示例性等离子体源900的平面图。等离子体源900可包括先前所描述的材料或配置中的任一个，并且可并入先前讨论的或在本公开中别处讨论的示例性腔室中的任一个。等离子体源900可包括定位在等离子体源内的两种导电材料，诸如导电管。如图所示，等离子体源900可包括被包括在电介质材料920内的两种导电材料910、940。此配置可包括以第一配置设置在电介质材料920内的第一管910。另外，等离子体源900可包括以第二配置设置在电介质材料920内的第二管940。第二配置(其可包括第二管940的环形部分)可在电介质材料920内、或在等离子体源900内相对于第一配置径向地向内，或者卷绕部分可在电介质材料920内、或在等离子体源900内相对于导电材料910径向地向内。等离子体源900也可包括限定在电介质材料920内的孔930。孔930可包括如先前所讨论的任何图案，并且可包括不同大小的孔，诸如，跨等离子体源900分布的较小孔930a和较大孔930b。例如，此配置可允许改进通过等离子体源900递送前体的均匀性。
如图所示，第一管910和第二管940、以及管或其他导电材料的第一配置和第二配置可以是平面配置。在实施例中，第一配置和第二配置可在跨电介质材料920的相同平面内。相应地，电介质材料可限定第一通道的至少一部分和第二通道的至少一部分，在这两部分中可安置有两种导电材料。在其他实施例中，第一配置或第一管910可在与第二配置或第二管940不同的电介质材料920的平面上。例如，第一管910可与第二管940竖直地偏移地设置在电介质材料920内。
当竖直偏移时，例如，电介质材料可包括三个板，每个板限定通道的其中可安置第一管910或第二管940的至少一部分。例如，中间板可限定通道的其中将第一管910安置在中间板的第一表面上的至少一部分。另外，中间板可限定通道的其中将第二管940安置在中间板的第二表面上的至少一部分，所述第二表面可与所述第一表面相对。在实施例中，第一管910可由电介质材料920的第一部分覆盖，并且第二管940可由电介质材料920的第二部分覆盖。随后，电介质材料的这两个部分可彼此耦合以提供等离子体源900。在此示例或本公开全文中的在其中多个板可用于等离子体源的任何示例中，孔可至少部分地通过电介质材料的每一个板限定。当被耦合在一起时，孔可轴向对准。
在两个分开的导电材料或管(诸如，对于等离子体源900的第一管910和第二管940)被包括在电介质材料内的示例性配置中，这两种材料可单独地与电源耦合。例如，第一管910可与第一RF源耦合，并且第二管940可与第二RF源耦合。另外，两个管可一起耦合至RF源。在一些实施例中，第一管和第二管可通过电容性分压器耦合至RF源。电容性分压器可通过调整递送至各个管的功率来允许管理在两个管之间递送至等离子体的能量的比率。这可允许控制等离子体密度分布。例如，可调谐电容可允许在两个线圈之间50％/50％、40％/60％、30％/70％、20％/80％的功率分配，这随后也可在两个线圈之间颠倒，或者任何其他功率分配将理解为由此配置涵盖。一般来说，不论与在类似或不同的功率水平上操作的单独的RF源耦合还是利用电容性分压器与RF功率耦合，采用两个线圈都可允许调谐等离子体以调整处理操作和等离子体分布的均匀性。
转到图10，图10示出了根据本技术的实施例的处理腔室1000的截面图。腔室1000可包括先前所讨论的腔室200和/或系统500的腔室的部件、材料或构造中的一些或全部。例如，腔室1000可包括盖1002，盖1002包括入口1001。腔室1000可限定内部区域，内部区域可由腔室内的一个或多个部件划分，诸如用于提供处理区域1033，在所述处理区域1033中，基板1055可定位在底座1065上。处理区域1033可包括诸如先前所论述的衬里1035。腔室1000可包括限定孔1007的面板1009。面板1009和盖1002可限定其中可并入递送至腔室的一种或多种前体的混合区域1011。腔室1000也可包括限定孔1024的板1023。在实施例中，板1023可配置为如先前所讨论的离子抑制器。电介质间隔件1010可定位在面板1009与板1023之间。RF功率可与面板1009耦合或能够与面板1009耦合，同时板1023可与电气接地耦合或能够与电气接地耦合。在实施例中，此类配置可允许在区域1015中面板1009与板1023之间产生电容耦合的等离子体。
腔室1000也可包括喷头或气体分配组件1025。气体分配组件1025可包括上部板和下部板，这些板可彼此耦合以限定在这些板之间的容积1027。板的耦合可诸如用于提供通过上部板和下部板的第一流体通道1040，并且提供通过下部板的第二流体通道1045。所形成的通道可配置成提供从容积1027通过下部板的流体通路，并且第一流体通道1040可在板与第二流体通道1045之间与容积1027流体地隔离。在实施例中，气体分配组件1025也可包括嵌入式加热器或加热元件1029。
腔室1000也可包括额外的等离子体源，诸如，电感耦合的等离子体(“ICP”)源1050。ICP源1050可包括在此描述中别处描述的其他等离子体源的特征或特性中的任一个。ICP源1050也可与先前所讨论的等离子体源中的任一个类似地操作。ICP源1050可包括电介质材料1052，通过电介质材料1052可限定孔1056。ICP源1050也可包括被包括在电介质材料1052内的第一导电材料1054和第二导电材料1058。第一导电材料1054和第二导电材料1058能以先前所讨论的配置(包括多个分离的源或单个源)中的任一个与RF功率电气耦合。围绕导电材料1058的孔1056的布置可以是先前所讨论的配置中的任一个，或者可以是围绕导电材料的任何其他布置。ICP源1050与先前所描述的平面源中的一些的区别在于，ICP源1050可包括可在电介质材料1052内竖直延伸的卷绕的或以其他方式配置的导电材料。ICP源1050的示例性配置被包括在参照图11的下文中，并且将参考所述附图进一步讨论。
图11示出了根据本技术的实施例的示例性等离子体源1100的平面图。如图所示，等离子体源1100可包括具有先前所讨论的设计中的任一个的一些类似特征(包括上文所讨论的图9)的设计。等离子体源1100可包括被包括在电介质材料1120内的第一导电材料1110。等离子体源1100也可包括被包括在电介质材料1120内第二导电材料1140。等离子体源1100也可包括在整个源中限定的孔1130，孔1130可包括各种图案和孔几何形状以提供前体或等离子体流出物通过等离子体源1100的均匀流动、或者相对或基本上均匀的流动。
第一导电材料1110和第二导电材料1140能以卷绕或螺旋配置被包括在电介质材料1120内。线圈可在电介质材料1120内竖直延伸而不彼此交叉。例如，第二导电材料1140的卷绕配置可相对于第一导电材料1110的卷绕配置径向地向内。线圈可各自以圆形方式或以某个其他弯曲几何形状竖直延伸达多匝。例如，基于等离子体源1100的电介质材料和导电材料的空间特性，第一导电材料1110或第二导电材料1140各自可包括至少约1个整匝、以及至少约2个整匝、至少约3个整匝、至少约4个整匝、在约2个整匝与约4个整匝之间、或任何其他数量的匝。
在一些实施例中，第一导电材料1110和第二导电材料1140可包括相同数量的匝，或者特征在于相同数量的匝。在一些实施例中，第一导电材料或第二导电材料可包括彼此不同数量的匝。另外，在一些实施例中，第一导电材料1110可继而在与第二导电材料1140相同的方向上，而在一些实施例中，第一导电材料1110和第二导电材料1140可继而在彼此相对的方向上，诸如，左手匝和右手匝。通过具有相对于一些平面配置的额外的匝，等离子体源1100可提供额外的等离子体均匀性、同时提供对两个线圈的等离子体调谐。
图12示出了根据本技术的实施例的图11的示例性等离子体源的截面图。如图所示，等离子体源1100可包括电介质材料1120，电介质材料1120可包括或涵盖第一导电材料1110或第二导电材料1140。电介质材料1120可包括各自可限定通道的至少一部分的任何数量的板，第一导电材料1110或第二导电材料1140可驻留在所述通道内。可包括板的电介质材料可包括任何先前所描述的配置，或能以涵盖导电材料的额外变体来配置。取决于每一导电材料的匝数，等离子体源1100在实施例中可具有至少约2英寸的厚度以覆盖导电材料，并且在实施例中可以是至少约3英寸、至少约4英寸、至少约5英寸、或更大。
导电材料1110和导电材料1140各自示为包括在电介质材料1120内竖直延伸的4个线圈。取决于制成的线圈的数量、导电材料的厚度和电介质材料1120的厚度，线圈可在距相邻线圈的任何距离处被包扎。如图所示，第一导电材料1110可包括被示出为隐藏的端部1112，并且第二导电材料1140可包括被示出为隐藏的端部1142。可以是导电材料的管的配置或布局可以是如图所示地水平设置。由于导电材料的竖直延伸，在实施例中，第一导电材料1110和/或第二导电材料1140也可在电介质材料1120的入口和出口处竖直地对准。另外，第一导电材料1110的线圈可间隔开以允许第二导电材料1140在所述线圈之间的进入和退出。如图所示，第二导电材料1140的引线或入口和出口部分可在第一导电材料1110的线圈内通过而导电材料不交叉。随后，第二导电材料1140的卷绕配置可在第一导电材料1110的卷绕配置的内部延伸或相对于第一导电材料1110的卷绕配置径向地向内。
图12另外示出可被包括在截面中的一些孔1130。例如，孔1130a可在等离子体源1100内居中地定位，而孔1130b和1130c可从等离子体源1100的中心区域径向向外。如先前所讨论，孔1130可具有各种大小和几何形状以有助于通过等离子体源1100的流动的均匀性。
上文所描述的腔室和等离子体源可用于一种或多种方法中。图13示出了根据本技术的实施例的示例性方法1300的操作。方法可涉及在离子蚀刻操作中的操作，在所述离子蚀刻操作中，自由基物质可引导至晶片表面以蚀刻或修改晶片上的特征。方法1300可包括：在操作1305处，使前体流入腔室中。腔室可以是先前所描述的腔室中的任一个，并且可以包括如先前所描述的示例性等离子体源中的一个，诸如，ICP等离子体源。前体可以是或可包括可不与晶片表面发生化学反应的材料，并且可以包括例如，氢、氦、氩、氮或某个其他前体。在操作1310处，前体可流过腔室而至等离子体源(诸如，ICP源中的一个)。等离子体源可接收功率以通过源产生等离子体，在操作1315处，当前体流经限定在源中的孔时，所述源可电离前体。源可作为喷头另外操作以在前体接触晶片之前维持或有助于前体的均匀流动。
在一些实施例中，源(诸如，所讨论的ICP源中的任一个)也可维持在别处产生的等离子体流出物。例如，所描述的等离子体源可用于生成等离子体，所述等离子体可调谐或进一步增强在源上游的电容耦合的等离子体中或在外部源(诸如，远程等离子体单元)中产生的等离子体流出物。以此方式，可具有相对短的驻留时间的前体例如可通过在处理区域附近或晶片层级附近的源的ICP等离子体而维持。
在先前描述中，出于解释目的，已阐述了许多细节以提供对本技术的各个实施例的理解。然而，对于本领域的技术人员显而易见的是，某些实施例无需这些细节中的一些就能实践，或使用额外细节来实践。
已公开了若干实施例，本领域的技术人员将意识到，可以使用各种修改、替代构造和等效方案而不背离实施例的精神。另外，未描述许多熟知的工艺和元件，以避免不必要地混淆本技术。相应地，上文的描述不应视为对本技术的范围的限制。
在提供数值范围的地方，应当理解，除非上下文中另有明确规定，否则该范围的上限和下限之间的每一个中间值(到下限单位的十分之一)也被特定地公开。在表述范围内的任一表述值或中间值与该表述范围内的任何其他表述值或中间值之间的每个更小范围也被涵盖在内。这些更小范围的上限和下限可独立地包括在范围内或在范围内被排除，并且每个范围(其中在更小范围内包括任一限值、不包括限值或包括两个限值)也涵盖在本技术内，受制于在表述范围内任何专门排除的限值。当表述范围包括限值的中的一个或两个时，也包括了排除那些所包括的限值中的任一个或两个的范围。
如本文中以及在所附权利要求书中所使用，除非上下文另外明确地指明，否则单数形式“一”(“a”、“an”)和“所述”(“the”)包括复数指称。因此，例如，对“一层”的引用包括多个此类层，并且对“所述前体”的引用包括对本领域的技术人员所已知的一种或多种前体和其等效物的引用，以此类推。
另外，当词语“包括”、“包含”、“含有”、“具有”和“带有”用于本说明书和所附权利要求书中时，旨在指定所述特征、整数、部件或操作的存在，但是它们不排除存在或添加一个或多个其他特征、整数、部件、操作、动作或组。

Claims (20)

1.一种半导体处理腔室，包括：
腔室外壳，至少部分地限定所述半导体处理腔室的内部区域；
喷头，定位在所述腔室外壳内，其中所述喷头至少部分地将所述内部区域划分为远程区域和处理区域，在所述处理区域中能包含基板；以及
电感耦合的等离子体源，定位在所述喷头与所述处理区域之间，其中所述电感耦合的等离子体源包括电介质材料内的导电材料。
2.如权利要求1所述的半导体处理腔室，其中所述电介质材料选自由氧化铝、氧化钇、单晶硅和石英组成的组。
3.如权利要求1所述的半导体处理腔室，其中所述导电材料包括铜管，所述铜管配置成接收在管内流动的流体。
4.如权利要求1所述的半导体处理腔室，其中所述电介质材料限定通过所述电感耦合的等离子体源的孔，并且其中所述导电材料围绕所述电介质材料内的所述孔定位。
5.如权利要求1所述的半导体处理腔室，其中所述孔跨所述电介质材料、围绕所述导电材料、以均匀的图案被包括。
6.如权利要求1所述的半导体处理腔室，其中所述导电材料在所述电介质材料内以平面螺旋图案来配置。
7.如权利要求1所述的半导体处理腔室，其中所述导电材料以线圈来配置，所述线圈在所述电介质材料内竖直延伸达所述导电材料的至少两个整匝。
8.如权利要求1所述的半导体处理腔室，其中所述导电材料包括定位在所述电感耦合的源内的两个导电管。
9.如权利要求8所述的半导体处理腔室，其中第一管以第一配置被包括在所述电感耦合的源内，其中第二管以第二配置被包括在所述电感耦合的源内，并且其中所述第二配置相对于所述第一配置径向地向内。
10.如权利要求9所述的半导体处理腔室，其中所述第一配置和所述第二配置各自是在所述电介质材料内竖直延伸的卷绕配置。
11.如权利要求9所述的半导体处理腔室，其中所述第一配置和所述第二配置各自是在所述电感耦合的源的所述相同平面内的平面配置。
12.如权利要求9所述的半导体处理腔室，其中所述第一管和所述第二管与RF源耦合。
13.如权利要求12所述的半导体处理腔室，其中所述第一管和所述第二管各自通过电容性分压器与所述RF源耦合。
14.如权利要求1所述的半导体处理腔室，其中所述电感耦合的源包括耦合在一起的至少两个板，其中每个板限定通道的至少一部分，并且其中所述导电材料容纳在至少部分地由所述至少两个板中的每个板限定的所述通道内。
15.一种电感耦合的等离子体源，包括：
第一板，限定第一板内的通道的至少一部分，其中所述第一板包括电介质材料；以及
导电材料，安置在所述通道的所述至少一部分内，其中所述导电材料的特征为螺旋或线圈配置，并且其中所述导电材料与RF源耦合。
16.如权利要求15所述的电感耦合的等离子体源，其中所述第一板限定通过所述第一板的孔，并且其中每个孔的中心轴线垂直于所述通道的所述至少一部分。
17.如权利要求15所述的电感耦合的等离子体源，其中所述源包括至少三英寸的厚度。
18.如权利要求15所述的电感耦合的等离子体源，其中所述第一板限定所述第一通道的至少一部分和第二通道的至少一部分，并且其中所述导电材料包括安置在所述第一通道的所述至少一部分内的至少第一导电材料和安置在所述第二通道的所述至少一部分内的第二导电材料。
19.如权利要求15所述的电感耦合的等离子体源，进一步包括与所述第一板耦合的第二板，从而封闭在所述第一板与所述第二板之间的所述导电材料，其中所述第二板限定第二孔，所述第二孔与通过所述第一板限定的所述孔轴向对准。
20.一种半导体处理腔室，包括：
腔室外壳，至少部分地限定所述半导体处理腔室的内部区域，其中所述腔室外壳包括盖组件，所述盖组件包括用于将前体接收到所述半导体处理腔室中的入口；
底座，在所述半导体处理腔室的所述内部区域内；
喷头，定位在所述腔室外壳内，其中所述喷头定位在所述盖组件与所述底座之间；
电感耦合的等离子体源，定位在所述喷头与所述底座之间，其中所述电感耦合的等离子体源包括电介质材料内的导电材料。
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