CN1359531A - 半导体加工的气体分布装置 - Google Patents

半导体加工的气体分布装置 Download PDF

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CN1359531A
CN1359531A CN00809681A CN00809681A CN1359531A CN 1359531 A CN1359531 A CN 1359531A CN 00809681 A CN00809681 A CN 00809681A CN 00809681 A CN00809681 A CN 00809681A CN 1359531 A CN1359531 A CN 1359531A
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拉金德尔·丁德萨
郝芳莉
埃里克·兰茨
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    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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    • C23C16/45572—Cooled nozzles
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Abstract

一种气体分布系统,用于均匀和非均匀分布气体穿过半导体衬底。气体分布系统包括支撑板(20)和喷头(22),它们密封在一起限定它们之间的气体分布室(24)。包括一个或多个隔板的隔板组件(26)放置在气体分布室中。隔板装置包括供应加工气体到隔板室中心部分(42)的第一气源(40)和供应第二加工气体到隔板室外围部分(46)的第二气源(44)。由于在靠近第一和第二气源出口的地方气体压力较大,在喷头背面的气体压力可比单气源情况中的要更加均匀。

Description

半导体加工的气体分布装置
发明领域
本发明涉及用于加工诸如集成电路晶片的半导体衬底的反应室，并且尤其涉及这些反应室中使用的气体分布系统的改进。
发明背景
半导体加工包括诸如金属，电介质和半导体材料的化学气相沉积(CVD)的沉积处理，上述层的刻蚀，光刻胶掩模层的抛光等。在刻蚀的情况下，常规使用等离子体刻蚀以刻蚀金属，电介质和半导体材料。平行板等离子体反应器通常包括气体室，此室包括一个和多个隔板，刻蚀气体通过的喷头电极，支持下电极上的硅晶片的基座，RF电源，和用于供应气体到气体室的气体喷射源。气体被电极电离以形成等离子体，而等离子体刻蚀在喷头电极下面支撑的晶片。
在共同转让的U.S.专利Nos.5,074,456；5,472,565；5,534,751；和5,569,356中公开了用于半导体衬底等离子体加工的喷头电极。在U.S.专利Nos.4,209,357；4,263,088；4,270,999；4,297,162；4,534,816；4,579,618；4,590,042；4,593,540；4,612,077；4,780,169；4,854,263；5,006,220；5,134,965；5,494,713；5,529,657；5,593,540；5,595,627；5,614,055；5,716,485；5,746,875和5,888,907中公开了其他的喷头电极气体分布系统。
在集成电路制作中的共同要求为在电介质材料中刻蚀诸如接触和通路的开口。电介质材料包括诸如氟化氧化硅(FSG)的掺杂氧化硅，诸如二氧化硅的未掺杂氧化硅，诸如硼磷硅酸盐玻璃(BPSG)和磷硅酸盐玻璃(PSG)的硅酸盐玻璃，掺杂和未掺杂的热生长氧化硅，沉积氧化硅的掺杂和未掺杂TEOS等。电介质掺杂剂包括硼，磷和/或砷。电介质可以覆盖诸如多晶硅的导体和半导体层，诸如铝，铜，钛，钨，钼的金属或它们的合金，诸如氮化钛的氮化物，诸如硅化钛，硅化钴，硅化钨，硅化钼的硅化金属等。在U.S.专利No.5,013,398中公开了等离子体刻蚀技术，其中平行板等离子体反应器被用于刻蚀氧化硅中的开口。
U.S.专利No.5,736,457描述了单和双“镶嵌”金属化方法。在“单镶嵌”方法中，在单独的步骤中形成通路和导体，其中或者导体或者通路的金属化图案被刻蚀到电介质层中，金属层被填充到电介质层中的刻蚀的沟槽和通孔中，并且通过化学机械平面化(CMP)或通过深刻蚀方法除去多余的金属。在“双镶嵌”方法中，通路和导体的金属化图案被刻蚀在电介质层中，并在单金属填充和多余金属除去方法中用金属填充刻蚀的沟槽和通路开口。
为了得到晶片整个表面的均匀刻蚀速率，将等离子体均匀地分布到晶片的表面上是希望的。目前的气体分布室设计包括多重隔板，对它们进行优化以均匀分布刻蚀气体得到晶片上的理想刻蚀效果。然而，目前的隔板和喷头电极设计最好地适合于晶片和喷头电极之间的特殊间隙的均匀气体分布的经验最优化，并且该设计难以调整来改变晶片和喷头之间的间隙。另外，常规气体分布设计包括具有几百个开口或复杂的，难以制作的几何图形的隔板，以确保刻蚀气体均匀分布到喷头电极的背面。在刻蚀大的十二英寸(300mm)晶片时，控制加工气体形成喷头两端均匀的压力分布是更加困难的。开口和隔板的数量必须显著增加，以维持刻蚀气体的均匀分布。随着隔板中的开口数量的增加和隔板数量的增加，制作所述气体分布装置的复杂性和成本大大增加。
发明总结
本发明提供一种气体分布系统，它的制作设计简单，需要小数量的隔板，然而仍得到穿过喷头输送的理想气体分布。对于任何尺寸的衬底和/或处于喷头和被加工的半导体衬底之间的间隙来说气流可最优化。另外，本发明会提高从喷头电极到冷却的支撑板的热传送，从而形成电极表面两端的较好的温度均匀性。此外，本发明可提供喷头电极气体分布系统元件之间的通常连续的电接触。
根据本发明的气体分布装置包括支撑板和喷头(shower head)，它们被封闭以限定气体分布室。该室包括隔板组件，此组件包括用于得到跨越喷头的理想压力分布的一个或多个隔板。多重气源提供加工气体进入到气体分布室，在该室中加工气体向下流经隔板组件并通过喷头。
本发明的第一实施方案包括具有一个上部隔板的隔板组件。诸如O-形环的密封构件处于上部隔板和支撑板之间的中间位置。密封构件将上部隔板和支撑板之间的空间分成内部和外部区域。来自第一气源的气体将气体导入到内部区域并且来自第二气源的气体将气体导入到外部区域中。这种布置允许不同的气体化学组成和/或气体压力被提供到内部和外部区域中。结果，通过预先选择加工参数或在加工衬底过程中调整所述加工参数，可较好地控制跨越衬底的气体化学组成和/或气体压力。
如果需要，可布置中间和/下部隔板以限定三个增压室(plenum)。第一增压室位于上部和中间隔板之间。第二增压室位于中间和下部隔板之间，第三隔板位于下部隔板和喷头之间。增压室可用于形成跨越喷头的更加均匀的加工气体压力分布。
在本发明的第二实施方案中，支撑部件包括一个在其下侧面中的凹槽，它定义了气体分布室。支撑部件具有供应第一加工气体进入到凹槽室中心区域的第一气体出口和供应第二加工气体进入到凹槽外围区域的第二气体出口。密封在隔板室中的是上部隔板和下部隔板。布置上部隔板专门接收来自第一气源的气体，并布置下部隔板专门接收来自第二气源的气体。在上部隔板中的第一套气路是与第二隔板中的气路处于流动连接的，以形成一套流动接触的气路，通过该气路第一加工气体直接从上部隔板穿过到达下部隔板的下面。第二加工气体流经下部隔板中的第二套气路到达邻近喷头背面的下面。在这种布置中，在流到下部隔板的下面之前第一加工气体基本不与第二加工气体混合。下部隔板和喷头之间的空间可具有空间隔离的环形通道，其允许选择控制穿过喷头的气体，例如，以得到喷头上的均匀或非均匀气体化学组成和/或压力。来自第一气源和第二气源的气体都流经喷头的第三套开口进入到跨越衬底的区域中。
附图简述
通过联系附图，阅读下述的详细描述，将理解本发明的目的和优点，其中：
图1是根据本发明的气体分布室的截面图；
图2是本发明第一实施方案的部件分解透视截面图；
图3是本发明第一实施方案的截面图；
图4是本发明第二实施方案的部件分解透视截面图；
图5是第二实施方案的截面图；
图6是本发明第二实施方案的下部隔板的透视截面图；
图7A-B示出了利用本发明气体分布系统可实施的刻蚀过程。
优选实施方案详述
为了更好地理解本发明，下面的详细描述参考附图，其中示出和描述了本发明优选实例实施方案。例外，用于识别附图中的相同元件的参考号在全文中都是相同的。
根据本发明，加工气体可被均匀的从一个或多个气源分布到位于喷头下面的衬底上。喷头可被用于任何类型的半导体加工装置中，其中它需要在半导体衬底上分布加工气体。所述装置包括CVD系统，抛光器(asher)，电容耦合等离子体反应器，感应耦合等离子体反应器，ECR反应器等等。
在图1中示出了平行板等离子体反应器的气体分布系统，其中支撑板20和喷头22被固定在一起以限定密封的气体分布室24。包括一个或多个隔板的隔板组件26位于支撑板20和喷头22之间。根据本发明，配置隔板部件26的几何形状和排列，以将气体均匀分布到喷头22的背面28上。在诸如化学气相沉积和干刻蚀等离子体方法的半导体晶片处理方法中，需要衬底上的加工气体的控制分布，以增加这些方法的一致性和产率。
从图2和图3看出，在本发明的第一实施方案中，隔板组件26包括隔板30A和任选的隔板30B和30C。隔板30A-30C被放置在由喷头22外围朝上突出的侧面34确定的凹槽32中。上部隔板30A被O-形环38从支撑板20的下表面36隔开。O-形环38将上部隔板30A和支撑板20之间的空间分成两个区域，每一个区域可被供应具有不同气体化学组成，压力和/或流速的加工气体。来自第一气源40的气体流进上部隔板30A和支撑板20之间的中心区域42中。来自第二气源44的气体流进环行通道44a然后进入上部隔板30A和支撑板20之间的外围区域46中。中间和下部隔板30B，30C可配置在上部隔板30A的下面以限定它们之间的开放增压室48A，48B及下部隔板30C和喷头22之间的开放增压室48C。
每个气源在上部隔板30A的表面上形成压力分布，其中邻近气源出口处气体压力最高，并在远离出口的方向上减小。因此，使用连接到第一和第二气源40，44上的第一和第二质量流量控制器50A，50B，可以调整上部隔板30A顶面的外围46和中心区域42之间的相对气体压力。通过调整从气源50C，50D，50E，50F等供应的两种或多种气体的流速，可以向每个气体质量流量控制器50A，50B供应理想的混合气体。
分布加工气体越过上部隔板30A和支撑板20之间的中心区域42和外围区域46，并且穿过上部隔板30A中的开口52A进入上部和中间隔板30A，30B之间的开放增压室48A。此后，气体向下流经中间隔板30B中的开口52B进入中间和下部隔板30B，30C之间的开放增压室48B，然后通过下部隔板30C中的开口52C进入到下部隔板30C和喷头22之间的开放增压室48C，最终在到达衬底之前通过喷头22中的开口54。气体每次进入开放增压室，由于从高压区域到低压区域的非均匀压力有些均衡，非均匀压力分布被减弱。因此，通过配置气体分布系统以限定隔板30之间的多个增压室48，在喷头22的背面28处可以得到基本均匀的压力分布。
在图4-6中示出了气体分布系统的第二实施方案。第二实施方案的隔板组件包括两个隔板56A，56B。上部隔板56A包括接触支撑板20的部分，而下部隔板56B包括接触喷头22的部分。支撑板20，隔板组件26和喷头22之间的表面对表面的接触促进了喷头22，隔板组件26和支撑板20之间的传热，并且在喷头用作顶电极的情况下可以提供喷头22，隔板组件26和支撑板20之间的导电通路。
在加工过程中，温控支撑板20作为散热装置，通过隔板组件26从喷头22中吸收热量。例如，冷却剂可在支撑板20中通过冷却通道58循环，用来散发加工衬底过程中产生的热量。
在第二实施方案中，配置第一气源60把气体馈送到上部隔板56A中的中心凹槽62中。第二气源64把气送到环形歧管66中，它将气体分布到下部隔板56B上的外围区域68上。环形歧管66可与支撑板20集成或可以包括气体分布系统的单独元件。
上部隔板56A包括放射状伸展的通道70，它将来自主要位于中心的第一气源60的气体分布到上部隔板56A的外围。通道70被限定在接触支撑板20的下表面36的接触表面72之间。热量和电流从上部隔板56A通过表面72流到支撑板20。相似地，下部隔板56B的顶面包括放射状伸展的通道74，它将来自位于外围的环形歧管66的气体分布到下部隔板56B中心部分中的环行通道76上。放射状伸展的通道74被限定在热和电接触上部隔板56A的接触表面78之间。尽管通道70，74和76被示出在上部和下部隔板的上表面中，它们也可以形成在支撑板20和上部隔板的下表面中。
位于上部隔板中的放射状伸展通道70中的开口80流动连接到下部隔板56B中的第一套开口82上。也就是说，在上部隔板56A中的开口80和下部隔板56B中的第一套开口82限定一个从第一气源60通过上部和下部隔板56A，56B的连续和不间断的流体通路。第二气源64的气体流经下部隔板56B中的通道74中的第二套开口84。配置流动连接的开口80，82和第二套开口84以阻止来自第一气源60和第二气源64的气体之间的显著混合。所述配置允许一些气体在上部和下部隔板之间迁移。为了阻止这种迁移，上部和下部隔板应该以一种方式粘合或冶金接合在一起，该方式阻止两种气体混合在一起。
优选地，通过诸如匹配对准特征例如定位销的合适技术，对准上部隔板中的开口80和下部隔板中的第一套开口82，形成流连接的开口80，82。然而，连接开口80到开口82的其他技术包括在上部和下部隔板之间插入具有图形的垫圈或在上部和下部隔板之间提供连接的单独管。
下部隔板56B的下表面包括环行向下凸出墙壁部分86，它热和电接触喷头22的顶面。流连接的开口80，82和第二套开口84打开到被向下凸出墙壁部分86限定的放射状间隔的环行通道88中。通道88可形成在喷头的上表面中，或者下部隔板和喷头之间的空间可为具有或者不具有它们之间的接触部分的开放增压室，用于从喷头将热量传导出去和/或将电能供应到喷头上。
在半导体加工过程中，来自第一气源60的气体流经上部隔板56A和下部隔板56B中的流连接的开口80，82，并且来自第二气源64的气体流经下部隔板56B中的第二套开口84。来自第一和第二气源60，64的气体在喷头22顶面上的下部隔板下侧中的通道88中混合，并且流经喷头22中的第三套开口90到达衬底。
在上部隔板56A两端，在位于中心的第一气源60附近的气体压力最高，而在上部隔板56A外围附近最低。加工气体向下流经上部和下部隔板56A，56B中的流连接开口82，84到达下部隔板56B下侧面中的打开通道88中。在操作中，如果第一和第二气源以相同的压力输送气体，来自第一气源60的气体建立压力分布，其中在靠近下部隔板56B中心的地方压力高而在下部隔板56B的外围压力低，而来自第二气源64的气体建立压力分布，其中在外围压力高而在下部隔板的中心压力低。因此，利用本发明的隔板装置，在喷头背面的压力可做得在喷头背面上比较均匀。
在另一加工方案中，气体分布系统可在喷头22的背面28上提供一种可控的，非均匀的气体压力分布。例如，如果需要喷头22的背面28外围高的气体压力，通过第二气源64的气流可相对于通过第一气源60的气流选择增加。相反地，如果在喷头22的背面28中心附近需要相对较高的气体压力，通过第一气源60的气流可相对于通过第二气源64的气流增加。因此，在单晶片加工的过程中，气体分布系统可以将不同化学组成的气体提供到晶片上的一个或多个环行区域。由于气体化学组成，流速和压力在每个所述环行区域圆周周围均匀，但是可从一个区域到另一个区域放射状的改变，因此，在加工过程中可能影响晶片的均匀处理，其中在晶片表面的加工情况跨越在晶片上不同。
图7A-B示出了根据本发明在单步骤中如何刻蚀双镶嵌结构。图7A示出了预刻蚀情况，其中相应于沟槽的开口500被提供在光刻胶掩模层520中，它覆盖在由诸如氧化硅的第一电介质层540，诸如氮化硅的第一终止层560，诸如氧化硅的第二电介质层580，诸如氮化硅的第二终止层600和诸如硅晶片的衬底620组成的叠层上。为了在单刻蚀步骤中得到通过第一终止层560的通孔，第一终止层560包括开口640。图7B示出了刻蚀后的结构，其中开口500通过电介质层540延伸到第一终止层560，开口640通过第二电介质580延伸到第二终止层600。上述的装置被称为“自对准双镶嵌”结构。
在刻蚀过程中，在第一和第二实施方案中第一和第二气源提供的加工气体条件相互之间可以变化，例如在刻蚀沟槽500过程中，可以提供Ar，氧气和碳氟化合物(例如，CHF3和C4F8)的混合物，而在刻蚀通孔640过程中，可以减小到晶片中心区域的氧气的流量。在刻蚀低-K电介质层的情况下，加工气体包括诸如C2H4的烃类化合物，并且烃类化合物与氧气的流速比例可以放射状地变化以得到均匀的刻蚀。因此，根据本发明，可以调整到晶片中心和边缘的气体流量，以补偿等离子体室中的边缘快速刻蚀和中心快速刻蚀情况。例如，在常规等离子体室刻蚀器中，可以发生边缘快速刻蚀直到光刻胶被腐蚀掉，此后中心快速刻蚀情况才发生。利用根据本发明的气体分布装置，当晶片具有光刻胶层时可在中心区域提供更多的氧气，而在腐蚀掉光刻胶层时，可减小到中心的氧气流量。结果，通过补偿边沿快速和中心快速刻蚀情况可以得到更加均匀的刻蚀。
本发明的方法适用于包括等离子体刻蚀各种电介质层的各种等离子体处理，电介质层诸如氟化氧化硅(FSG)的掺杂氧化硅，诸如二氧化硅的未掺杂氧化硅，旋装玻璃(SOG)，诸如硼磷硅酸盐玻璃(BPSG)和磷硅酸盐玻璃(PSG)的硅酸盐玻璃，掺杂或未掺杂的热生长氧化硅，沉积氧化硅的掺杂和未掺杂TEOS等。电介质掺杂剂包括硼，磷和/或砷。电介质可以覆盖诸如多晶硅的导体和半导体层，诸如铝，铜，钛，钨，钼的金属或它们的合金，诸如氮化钛的氮化物，诸如硅化钛，硅化钴，硅化钨，硅化钼的硅化金属等。
等离子体可以为各种类型的等离子体反应器中产生的高密度等离子体。所述等离子体反映器典型具有高能量源，它使用RF能，微波能，磁场等产生高密度的等离子体。例如，在也称为诱导耦合等离子体发生器的变压器耦合等离子体(TCPTM)，电子回旋共振(ECR)等离子体发生器，螺旋波(helicon)等离子体发生器等等中都可以产生高密度等离子体。在共同拥有的U.S.专利No.5,820,723中公开了可以提供高密度等离子体的高流等离子体发生器的实例，其公开内容在此作为参考。
已经参考优选实施方案描述了本发明。然而，本领域中的技术人员会很容易地理解在不脱离本发明精神的基础上可以用上述之外的具体形式具体表达本发明。优选实施方案是说明性的，并且在任何情况下不应该加以限制性的考虑。通过附加的权利要求书而不是前面的描述，给出了本发明的范围，并且处于权利要求书范围内的变化和等效物打算包括在此。

Claims (31)

1.一种气体分布系统，对半导体衬底加工过程中使用的反应室有用，包括：
支撑部件，在其下表面具有凹进部分，该支撑部件具有开口到凹进部分中心区域的第一气源和开口到凹进部分外围区域的第二气源；
隔板装置，位于凹进部分中使得来自第一气源的气体穿过隔板装置中的第一开口而来自第二气源的气体穿过隔板装置中的第二开口；以及
喷头，被支撑部件支撑，使得穿过第一和第二开口的气体混合在一起，并且穿过喷头中的第三套开口。
2.如权利要求1的气体分布系统，其中喷头为顶电极而支撑部件为等离子体反应室的温控部件。
3.如权利要求1的气体分布系统，其中支撑部件包括附着在温控部件上的支撑环。
4.如权利要求1的气体分布系统，其中隔板装置包括上部和下部隔板，第二气源提供气体到位于上部和下部隔板之间的一个或多个气流通道中，来自第二气源的气体以从隔板外部区域到隔板内部区域的方向流经该通道。
5.如权利要求4的气体分布系统，其中通道被形成在上部隔板的下表面和/或下部隔板的上表面中。
6.如权利要求5的气体分布系统，其中下部隔板的上表面热接触上部隔板的下表面。
7.如权利要求5的气体分布系统，其中喷头为一种电极，上部和下部隔板为导电材料，并且下部隔板的上表面电接触上部隔板的下表面。
8.如权利要求1的气体分布系统，其中隔板装置包括上部和下部隔板，流经第一和第二开口的气体在位于下部隔板和喷头之间的气流通道中混合。
9.如权利要求8的气体分布系统，其中该通道形成在下部隔板的下表面和/或喷头的上表面中，下部隔板的下表面接触喷头的上表面。
10.如权利要求8的气体分布系统，其中喷头为一种电极，上部和下部隔板为导电材料，并且通道形成在下部隔板的下表面和/或喷头的上表面中，下部隔板的下表面电和热接触喷头的上表面。
11.如权利要求1的气体分布系统，其中喷头包括喷头电极。
12.如权利要求1的气体分布系统，其中隔板装置包括隔板和密封部件，该密封部件将隔板和支撑部件之间的空间分隔成中心和外围区域，第一气源开口到中心区域而第二气源开口到外围区域中。
13.如权利要求12的气体分布系统，其中密封部件为O-形环。
14.如权利要求1的气体分布系统，还包括连接到第一气源的第一质量流量控制器，连接到第二气源的第二质量流量控制器，和连接到第一和第二质量流量控制器的控制器，以便调整由第一和第二气源提供的加工气体的气体化学组成和/或流速。
15.一种在反应室中加工衬底的方法，其中气体分布系统包括在其中限定隔板室的支撑部件，支撑部件具有开口到隔板室中心区域中的第一气源和开口到隔板室外围区域中的第二气源，隔板装置位于隔板室中使得来自第一气源的气体穿过隔板装置中的第一开口而来自第二气源的气体穿过隔板装置中的第二开口，喷头被支持部件支撑，使得穿过第一和第二开口的气体混合在一起并且穿过喷头中的第三开口，该方法包括：
将半导体衬底供应到反应室中；
将加工气体供应到第一和第二气源中，使得加工气体在不混合的情况下流经隔板装置直到加工气体穿过隔板装置，此后，混合的加工气体穿过喷头并进入到反应室的内部；以及
利用穿过喷头的加工气体加工半导体衬底。
16.如权利要求15的方法，其中喷头为喷头电极，其激发穿过该处的加工气体到等离子体状态。
17.如权利要求16的方法，还包括通过提供RF电源到喷头电极上使得加工气体形成接触半导体衬底暴露表面的等离子体，而刻蚀半导体衬底上的一个层。
18.如权利要求15的方法，其中半导体衬底包括硅晶片并且该方法包括干刻蚀晶片上的电介质，半导体或导电层材料。
19.如权利要求15的方法，其中该方法包括在半导体衬底上沉积材料层。
20.如权利要求15的方法，其中喷头包括喷头电极并且支撑部件包括温控部件，该方法包括使冷却剂通过温控部件从喷头电极中吸取热量。
21.如权利要求15的方法，其中隔板装置包括上部和下部隔板，第二气源提供气体到位于上部和下部隔板之间的一个或多个气流通道中，来自第二气源的气体以从隔板外部区域到隔板内部区域的方向流经该通道。
22.如权利要求15的方法，还包括调整提供到第一气源的加工气体的流速和/或气体压力和调整提供到第二气源的加工气体的流速和/或气体压力，使得跨越喷头背侧提供一种理想的气体压力分布。
23.如权利要求15的方法，其中隔板装置包括上部和下部隔板，该方法还包括通过接触喷头，下部隔板，上部隔板和/或支撑部件的表面，从喷头吸取热量而冷却喷头。
24.如权利要求15的方法，其中隔板装置包括上部和下部隔板，穿过第一和第二开口的气体在位于下部隔板和喷头之间的放射状空间隔开的环行气流通道中混合。
25.如权利要求24的方法，其中通道形成在下部隔板的下表面和/或喷头的上表面，下部隔板的下表面接触喷头的上表面，使得在半导体衬底加工过程中除去喷头的热量。
26.如权利要求15的方法，其中流经第一气源的加工气体与流经第二气源的气体具有相同的气体化学组成。
27.如权利要求15的方法，其中流经第一气源的加工气体与流经第二气源的气体具有不同的气体化学组成。
28.如权利要求15的方法，其中衬底为在至少第一和第二步骤中被刻蚀的半导体晶片，相对于流经第二气源的加工气体调整流经第一气源的加工气体，以补偿在第一和第二步骤中的边缘-快速和中心-快速刻蚀情况。
29.如权利要求15的处理，其中刻蚀开口通过衬底的电介质层的暴露部分到达衬底的导电或半导体层。
30.如权利要求29的处理，其中实施刻蚀步骤作为制作镶嵌结构的方法的一部分。
31.如权利要求29的处理，其中半导体衬底包括由光刻胶掩模层，第一电介质层，第一终止层，第二电介质层和第二终止层形成的各层，实施刻蚀步骤使得在刻蚀步骤的第一阶段在光刻胶层中形成图案的沟槽被刻蚀通过第一电介质层到达第一终止层，并且在刻蚀步骤中的第二阶段通孔或接触被刻蚀通过第二电介质层到达第二终止层，调整第一和第二气源提供的加工气体使得在第一阶段的加工气体组成和/或流速不同于第二阶段的加工气体组成和/或流速。
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KR20020028921A (ko) 2002-04-17
US6245192B1 (en) 2001-06-12
EP1200981A1 (en) 2002-05-02
EP1200981B1 (en) 2007-09-05
US6432831B2 (en) 2002-08-13
IL147033A0 (en) 2002-08-14
WO2001003159A9 (en) 2002-05-02
AU5608700A (en) 2001-01-22
JP2003504841A (ja) 2003-02-04
US20010027026A1 (en) 2001-10-04
WO2001003159A1 (en) 2001-01-11
TW460915B (en) 2001-10-21
DE60036291D1 (de) 2007-10-18
JP4732646B2 (ja) 2011-07-27

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