KR100735932B1 - 성막 장치 - Google Patents
성막 장치 Download PDFInfo
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- KR100735932B1 KR100735932B1 KR1020067006790A KR20067006790A KR100735932B1 KR 100735932 B1 KR100735932 B1 KR 100735932B1 KR 1020067006790 A KR1020067006790 A KR 1020067006790A KR 20067006790 A KR20067006790 A KR 20067006790A KR 100735932 B1 KR100735932 B1 KR 100735932B1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/4557—Heated nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45572—Cooled nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
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- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
샤워헤드 온도 | 스테이지 온도 | 대응 | |
종래기술 | 470℃ 내지 480℃ | 640℃ 내지 650℃ | 스테이지 온도를 성막 온도 이상으로 할 필요 있음 |
본 발명 | 500℃ | 640℃ | 샤워헤드를 직접적으로 온도 제어 |
Claims (21)
- 성막 장치에 있어서,기판을 처리하는 처리 용기와,상기 처리 용기의 상부에 배치되고, 상기 처리 용기를 개폐하는 리드부와,상기 처리 용기내에 배치되고, 상기 기판을 탑재하는 탑재대와,상기 탑재대내에 설치된 기판을 가열하는 히터와,상기 탑재대를 지지하는 지지부와,상기 리드부에 지지되고, 상기 탑재대에 대향해서 설치되고, 처리 용기내에 처리 가스를 공급하는 가스 도입부와,상기 처리 용기내에 상기 가스 도입부를 거쳐서 상기 처리 가스를 도입하는 가스 도입 기구와,상기 처리 용기내에, 상기 처리 가스의 플라즈마를 생성하는 플라즈마 생성 수단과,상기 처리 용기내를 배기하는 배기 장치를 포함하며,상기 가스 도입부와 상기 처리 용기 사이에, 환형의 충전 부재와, 상기 충전 부재를 고정하는 고정 부재가 배치되는 것을 특징으로 하는성막 장치.
- 제 1 항에 있어서,상기 가스 도입부는,제 1 플레이트와,제 2 플레이트와,제 3 플레이트를 구비하며,상기 제 1 플레이트와 상기 제 2 플레이트 사이에 제 1 공간이 형성되고, 상기 제 2 플레이트와 상기 제 3 플레이트 사이에 제 2 공간이 형성되는 것을 특징으로 하는성막 장치.
- 제 1 항에 있어서,상기 가스 도입부의 온도를 소정의 온도로 제어하는 온도 제어 수단을 배치하는 것을 특징으로 하는성막 장치.
- 제 1 항에 있어서,상기 가스 도입부는 제 1 온도 제어 수단과 제 2 온도 제어 수단을 구비하는 것을 특징으로 하는성막 장치.
- 제 1 항에 있어서,상기 가스 도입부의 위를 피복하도록 배치된 제 1 단열 부재를 구비하고, 상기 가스 도입부와 상기 단열 부재 사이에 대기 공간을 마련한 제 2 단열 부재를 구비하는 것을 특징으로 하는성막 장치.
- 제 5 항에 있어서,상기 단열 부재는 세라믹 또는 수지로 이뤄진 것을 특징으로 하는성막 장치.
- 제 6 항에 있어서,세라믹이 Al2O3 인 것을 특징으로 하는성막 장치.
- 제 1 항에 있어서,상기 충전 부재와 고정 부재 사이에 탄성 부재를 배치한 것을 특징으로 하는성막 장치.
- 제 8 항에 있어서,상기 탄성 부재는 내식성 금속 스프링인 것을 특징으로 하는성막 장치.
- 제 9 항에 있어서,상기 내식성 금속 스프링은 Ni 합금재인 것을 특징으로 하는성막 장치.
- 제 10 항에 있어서,상기 Ni 합금재는 인코넬인 것을 특징으로 하는성막 장치.
- 제 1 항에 있어서,상기 성막 장치는 Ti 막을 형성하는 장치이며,상기 가스 도입 기구는, 상기 Ti 막을 형성하는 상기 처리 가스가 TiCl4 가스, H2 가스 및 불활성 가스를 적어도 구비하고, 상기 처리 가스를 도입하기 위한 TiCl4 가스원, H2 가스원 및 불활성 가스원을 적어도 구비하는 것을 특징으로 하는성막 장치.
- 제 1 항에 있어서,상기 지지부의 상부를 커버하는 절연 부재를 배치한 것을 특징으로 하는성막 장치.
- 제 1 항에 있어서,상기 탑재대의 외주부에 링 부재를 설치한 것을 특징으로 하는성막 장치.
- 제 1 항에 있어서,상기 충전 부재는 석영 부재로 이뤄진 것을 특징으로 하는성막 장치.
- 제 1 항에 있어서,상기 가스 도입부를 상기 처리 용기의 외측으로 선회하여 반전시키는 반전 기구를 더 구비하는 것을 특징으로 하는성막 장치.
- 제 1 항에 있어서,상기 가스 도입부는,수평부를 갖는 가스 도입부 본체와,상기 수평부의 외주 방향으로 연속하는 환형의 지지부와,상기 수평부와 대향해서, 상기 가스 도입부 본체에 지지되는 복수의 가스 토 출 구멍을 형성하는 플레이트를 구비하는 것을 특징으로 하는성막 장치.
- 제 17 항에 있어서,상기 리드부의 내주부에 배치하는 환형의 절연 부재를 구비하고, 상기 절연 부재를 거쳐서, 상기 지지부가 지지되어 있는 것을 특징으로 하는성막 장치.
- 제 17 항에 있어서,상기 지지부의 내측에, 상기 샤워헤드의 중심을 향해서 등간격으로 배치하는 리브를 구비하는 것을 특징으로 하는성막 장치.
- 제 17 항 또는 제 18 항에 있어서,상기 지지부의 상부를 커버하는 절연 부재를 배치한 것을 특징으로 하는성막 장치.
- 제 17 항에 있어서,상기 수평부에 상기 탑재대에 대응해서 배치되는 제 1 히터와, 상기 제 1 히터를 에워싸도록 배치하는 제 2 히터를 구비하는 것을 특징으로 하는성막 장치.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2001-00034520 | 2001-02-09 | ||
JP2001034520 | 2001-02-09 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020037010504A Division KR100756107B1 (ko) | 2001-02-09 | 2002-02-08 | 성막 장치 |
Publications (2)
Publication Number | Publication Date |
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KR20060037470A KR20060037470A (ko) | 2006-05-03 |
KR100735932B1 true KR100735932B1 (ko) | 2007-07-06 |
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ID=18898113
Family Applications (12)
Application Number | Title | Priority Date | Filing Date |
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KR1020067006790A KR100735932B1 (ko) | 2001-02-09 | 2002-02-08 | 성막 장치 |
KR1020097002783A KR100945321B1 (ko) | 2001-02-09 | 2002-02-08 | 성막 장치 |
KR1020067018174A KR100749377B1 (ko) | 2001-02-09 | 2002-02-08 | 성막 장치 |
KR1020067024611A KR100776843B1 (ko) | 2001-02-09 | 2002-02-08 | 성막 장치 및 Ti막 성막 장치 |
KR1020097014511A KR101004173B1 (ko) | 2001-02-09 | 2002-02-08 | 성막 장치 |
KR1020067006792A KR100922241B1 (ko) | 2001-02-09 | 2002-02-08 | 성막 장치 및 샤워헤드 구조체 |
KR1020097002784A KR100945320B1 (ko) | 2001-02-09 | 2002-02-08 | 성막 장치 |
KR1020097014512A KR101004192B1 (ko) | 2001-02-09 | 2002-02-08 | 성막 장치 |
KR1020037010504A KR100756107B1 (ko) | 2001-02-09 | 2002-02-08 | 성막 장치 |
KR1020107011259A KR101004199B1 (ko) | 2001-02-09 | 2002-02-08 | 성막 장치 |
KR1020057018178A KR100676979B1 (ko) | 2001-02-09 | 2002-02-08 | 성막 장치 |
KR1020107011258A KR101004222B1 (ko) | 2001-02-09 | 2002-02-08 | 성막 장치 |
Family Applications After (11)
Application Number | Title | Priority Date | Filing Date |
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KR1020097002783A KR100945321B1 (ko) | 2001-02-09 | 2002-02-08 | 성막 장치 |
KR1020067018174A KR100749377B1 (ko) | 2001-02-09 | 2002-02-08 | 성막 장치 |
KR1020067024611A KR100776843B1 (ko) | 2001-02-09 | 2002-02-08 | 성막 장치 및 Ti막 성막 장치 |
KR1020097014511A KR101004173B1 (ko) | 2001-02-09 | 2002-02-08 | 성막 장치 |
KR1020067006792A KR100922241B1 (ko) | 2001-02-09 | 2002-02-08 | 성막 장치 및 샤워헤드 구조체 |
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EP (1) | EP1371751B1 (ko) |
JP (1) | JP4889683B2 (ko) |
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